WO2003084688A3 - Method and system for providing a thin film - Google Patents
Method and system for providing a thin film Download PDFInfo
- Publication number
- WO2003084688A3 WO2003084688A3 PCT/US2003/009861 US0309861W WO03084688A3 WO 2003084688 A3 WO2003084688 A3 WO 2003084688A3 US 0309861 W US0309861 W US 0309861W WO 03084688 A3 WO03084688 A3 WO 03084688A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- metal layer
- irradiated
- thin film
- mask
- microstructure
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76867—Barrier, adhesion or liner layers characterized by methods of formation other than PVD, CVD or deposition from a liquids
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
- C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2003220611A AU2003220611A1 (en) | 2002-04-01 | 2003-04-01 | Method and system for providing a thin film |
US10/953,312 US7399359B2 (en) | 2002-04-01 | 2004-09-29 | Method and system for providing a thin film with a controlled crystal orientation using pulsed laser induced melting and nucleation-initiated crystallization |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US36918602P | 2002-04-01 | 2002-04-01 | |
US60/369,186 | 2002-04-01 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/953,312 Continuation US7399359B2 (en) | 2002-04-01 | 2004-09-29 | Method and system for providing a thin film with a controlled crystal orientation using pulsed laser induced melting and nucleation-initiated crystallization |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003084688A2 WO2003084688A2 (en) | 2003-10-16 |
WO2003084688A3 true WO2003084688A3 (en) | 2004-07-15 |
Family
ID=28791932
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/009861 WO2003084688A2 (en) | 2002-04-01 | 2003-04-01 | Method and system for providing a thin film |
Country Status (4)
Country | Link |
---|---|
US (1) | US7399359B2 (en) |
AU (1) | AU2003220611A1 (en) |
TW (1) | TWI272640B (en) |
WO (1) | WO2003084688A2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US8859436B2 (en) | 1996-05-28 | 2014-10-14 | The Trustees Of Columbia University In The City Of New York | Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon |
US8871022B2 (en) | 2007-11-21 | 2014-10-28 | The Trustees Of Columbia University In The City Of New York | Systems and methods for preparation of epitaxially textured thick films |
US8883656B2 (en) | 2002-08-19 | 2014-11-11 | The Trustees Of Columbia University In The City Of New York | Single-shot semiconductor processing system and method having various irradiation patterns |
US8889569B2 (en) | 2009-11-24 | 2014-11-18 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse sequential lateral soldification |
US9012309B2 (en) | 2007-09-21 | 2015-04-21 | The Trustees Of Columbia University In The City Of New York | Collections of laterally crystallized semiconductor islands for use in thin film transistors |
US9466402B2 (en) | 2003-09-16 | 2016-10-11 | The Trustees Of Columbia University In The City Of New York | Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions |
Families Citing this family (16)
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---|---|---|---|---|
US7318866B2 (en) | 2003-09-16 | 2008-01-15 | The Trustees Of Columbia University In The City Of New York | Systems and methods for inducing crystallization of thin films using multiple optical paths |
US7164152B2 (en) | 2003-09-16 | 2007-01-16 | The Trustees Of Columbia University In The City Of New York | Laser-irradiated thin films having variable thickness |
WO2005034193A2 (en) | 2003-09-19 | 2005-04-14 | The Trustees Of Columbia University In The City Ofnew York | Single scan irradiation for crystallization of thin films |
US7645337B2 (en) | 2004-11-18 | 2010-01-12 | The Trustees Of Columbia University In The City Of New York | Systems and methods for creating crystallographic-orientation controlled poly-silicon films |
US8221544B2 (en) | 2005-04-06 | 2012-07-17 | The Trustees Of Columbia University In The City Of New York | Line scan sequential lateral solidification of thin films |
KR101287314B1 (en) | 2005-12-05 | 2013-07-17 | 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 | Systems and methods for processing a film, and thin films |
TWI418037B (en) | 2007-09-25 | 2013-12-01 | Univ Columbia | Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films by changing the shape, size, or laser beam |
US8012861B2 (en) | 2007-11-21 | 2011-09-06 | The Trustees Of Columbia University In The City Of New York | Systems and methods for preparing epitaxially textured polycrystalline films |
WO2009067688A1 (en) | 2007-11-21 | 2009-05-28 | The Trustees Of Columbia University In The City Of New York | Systems and methods for preparing epitaxially textured polycrystalline films |
US8569155B2 (en) | 2008-02-29 | 2013-10-29 | The Trustees Of Columbia University In The City Of New York | Flash lamp annealing crystallization for large area thin films |
WO2010056990A1 (en) | 2008-11-14 | 2010-05-20 | The Trustees Of Columbia University In The City Of New York | Systems and methods for the crystallization of thin films |
US9087696B2 (en) | 2009-11-03 | 2015-07-21 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse partial melt film processing |
US9646831B2 (en) | 2009-11-03 | 2017-05-09 | The Trustees Of Columbia University In The City Of New York | Advanced excimer laser annealing for thin films |
US20150075756A1 (en) * | 2012-03-28 | 2015-03-19 | Carrier Corporation | Surface treatment for corrosion resistance of aluminum |
WO2016154316A1 (en) | 2015-03-24 | 2016-09-29 | Cummins Emission Solutions, Inc. | Integrated aftertreatment system |
US10366920B2 (en) | 2016-06-30 | 2019-07-30 | International Business Machines Corporation | Location-specific laser annealing to improve interconnect microstructure |
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2003
- 2003-04-01 WO PCT/US2003/009861 patent/WO2003084688A2/en not_active Application Discontinuation
- 2003-04-01 AU AU2003220611A patent/AU2003220611A1/en not_active Abandoned
- 2003-04-02 TW TW092107563A patent/TWI272640B/en not_active IP Right Cessation
-
2004
- 2004-09-29 US US10/953,312 patent/US7399359B2/en not_active Expired - Fee Related
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8859436B2 (en) | 1996-05-28 | 2014-10-14 | The Trustees Of Columbia University In The City Of New York | Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon |
US8883656B2 (en) | 2002-08-19 | 2014-11-11 | The Trustees Of Columbia University In The City Of New York | Single-shot semiconductor processing system and method having various irradiation patterns |
US9466402B2 (en) | 2003-09-16 | 2016-10-11 | The Trustees Of Columbia University In The City Of New York | Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions |
US9012309B2 (en) | 2007-09-21 | 2015-04-21 | The Trustees Of Columbia University In The City Of New York | Collections of laterally crystallized semiconductor islands for use in thin film transistors |
US8871022B2 (en) | 2007-11-21 | 2014-10-28 | The Trustees Of Columbia University In The City Of New York | Systems and methods for preparation of epitaxially textured thick films |
US8889569B2 (en) | 2009-11-24 | 2014-11-18 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse sequential lateral soldification |
Also Published As
Publication number | Publication date |
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US20060006464A1 (en) | 2006-01-12 |
TWI272640B (en) | 2007-02-01 |
TW200421413A (en) | 2004-10-16 |
WO2003084688A2 (en) | 2003-10-16 |
AU2003220611A8 (en) | 2003-10-20 |
US7399359B2 (en) | 2008-07-15 |
AU2003220611A1 (en) | 2003-10-20 |
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