WO2003077284A3 - Heterojunction bipolar transistor having thinned base-collector depletion region - Google Patents

Heterojunction bipolar transistor having thinned base-collector depletion region Download PDF

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Publication number
WO2003077284A3
WO2003077284A3 PCT/US2003/006660 US0306660W WO03077284A3 WO 2003077284 A3 WO2003077284 A3 WO 2003077284A3 US 0306660 W US0306660 W US 0306660W WO 03077284 A3 WO03077284 A3 WO 03077284A3
Authority
WO
WIPO (PCT)
Prior art keywords
collector
base
layer
bipolar transistor
depletion region
Prior art date
Application number
PCT/US2003/006660
Other languages
French (fr)
Other versions
WO2003077284A2 (en
Inventor
Eric S Harmon
David B Salzman
Jerry M Woodall
Original Assignee
Univ Yale
Eric S Harmon
David B Salzman
Jerry M Woodall
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Yale, Eric S Harmon, David B Salzman, Jerry M Woodall filed Critical Univ Yale
Priority to AU2003230597A priority Critical patent/AU2003230597A1/en
Publication of WO2003077284A2 publication Critical patent/WO2003077284A2/en
Publication of WO2003077284A3 publication Critical patent/WO2003077284A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type

Abstract

A heterojunction bipolar transistor includes a substrate (101) that supports an emitter layer (103), a base layer (105) and a collector layer (104). The collector layer is made thin, in combination with a reduction in a base-collector area in order to reduce capacitance, and is made from a wide band gap material that exhibits a high breakdown voltage. Preferably the collector layer is an intrinsic semiconductor material, such as intrinsic InGaP having a thickness of about 90 nm. The collector is thinned to reduce the probability of scattering, enabling electrons to be accelerated to higher kinetic energies due to an electrical field applied to a base-collector depletion region and one present in a base-collector junction.
PCT/US2003/006660 2002-03-04 2003-03-04 Heterojunction bipolar transistor having thinned base-collector depletion region WO2003077284A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003230597A AU2003230597A1 (en) 2002-03-04 2003-03-04 Heterojunction bipolar transistor having thinned base-collector depletion region

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US36182302P 2002-03-04 2002-03-04
US60/361,823 2002-03-04

Publications (2)

Publication Number Publication Date
WO2003077284A2 WO2003077284A2 (en) 2003-09-18
WO2003077284A3 true WO2003077284A3 (en) 2003-12-04

Family

ID=27805082

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/US2003/006506 WO2003077283A2 (en) 2002-03-04 2003-03-04 Drift-dominated detector
PCT/US2003/006660 WO2003077284A2 (en) 2002-03-04 2003-03-04 Heterojunction bipolar transistor having thinned base-collector depletion region

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PCT/US2003/006506 WO2003077283A2 (en) 2002-03-04 2003-03-04 Drift-dominated detector

Country Status (2)

Country Link
AU (2) AU2003230597A1 (en)
WO (2) WO2003077283A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2335290A2 (en) * 2008-09-02 2011-06-22 Golan, Gady Photoelectric structure and method of manufacturing thereof
CN102064187B (en) * 2009-11-11 2013-02-13 中国科学院半导体研究所 Silicon carbide consubstantial PIN (Personal Identification Number) microstructure material and preparation method thereof
CN105261639B (en) * 2014-07-18 2019-02-26 稳懋半导体股份有限公司 Heteroj unction bipolar transistor
CN107104172B (en) * 2017-06-17 2019-09-20 东莞市天域半导体科技有限公司 A kind of preparation method of SiC avalanche photodide device epitaxial material
CN110797429B (en) * 2019-11-08 2021-02-02 中国科学院长春光学精密机械与物理研究所 Stress-controlled gallium nitride-based infrared-ultraviolet double-color light detector and preparation method thereof
US20210226045A1 (en) * 2020-01-22 2021-07-22 Visual Photonics Epitaxy Co., Ltd. Heterojunction bipolar transistor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6159816A (en) * 1994-08-09 2000-12-12 Triquint Semiconductor Texas, Inc. Method of fabricating a bipolar transistor
US20020121674A1 (en) * 2000-11-27 2002-09-05 Kopin Corporation Biopolar transistor with lattice matched base layer
US6482711B1 (en) * 1999-10-28 2002-11-19 Hrl Laboratories, Llc InPSb/InAs BJT device and method of making
US6492664B2 (en) * 2000-06-27 2002-12-10 Nec Corporation Heterojunction bipolar transistor with reduced offset voltage

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5436468A (en) * 1992-03-17 1995-07-25 Fujitsu Limited Ordered mixed crystal semiconductor superlattice device
US6320212B1 (en) * 1999-09-02 2001-11-20 Hrl Laboratories, Llc. Superlattice fabrication for InAs/GaSb/AISb semiconductor structures
US6448582B1 (en) * 2000-09-21 2002-09-10 Yale University High modulation frequency light emitting device exhibiting spatial relocation of minority carriers to a non-radiative recombination region

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6159816A (en) * 1994-08-09 2000-12-12 Triquint Semiconductor Texas, Inc. Method of fabricating a bipolar transistor
US6482711B1 (en) * 1999-10-28 2002-11-19 Hrl Laboratories, Llc InPSb/InAs BJT device and method of making
US6492664B2 (en) * 2000-06-27 2002-12-10 Nec Corporation Heterojunction bipolar transistor with reduced offset voltage
US20020121674A1 (en) * 2000-11-27 2002-09-05 Kopin Corporation Biopolar transistor with lattice matched base layer

Also Published As

Publication number Publication date
AU2003225650A8 (en) 2003-09-22
WO2003077283A3 (en) 2003-12-24
AU2003225650A1 (en) 2003-09-22
WO2003077283A2 (en) 2003-09-18
WO2003077284A2 (en) 2003-09-18
AU2003230597A1 (en) 2003-09-22
AU2003230597A8 (en) 2003-09-22

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