WO2003073468A3 - Silicon carbide bipolar junction transistor with overgrown base region - Google Patents

Silicon carbide bipolar junction transistor with overgrown base region Download PDF

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Publication number
WO2003073468A3
WO2003073468A3 PCT/US2003/004873 US0304873W WO03073468A3 WO 2003073468 A3 WO2003073468 A3 WO 2003073468A3 US 0304873 W US0304873 W US 0304873W WO 03073468 A3 WO03073468 A3 WO 03073468A3
Authority
WO
WIPO (PCT)
Prior art keywords
bipolar junction
silicon carbide
carbide bipolar
junction transistors
base region
Prior art date
Application number
PCT/US2003/004873
Other languages
French (fr)
Other versions
WO2003073468A2 (en
Inventor
Igor Sankin
Janna B Dufrene
Original Assignee
Semisouth Lab Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semisouth Lab Inc filed Critical Semisouth Lab Inc
Priority to JP2003572068A priority Critical patent/JP4774196B2/en
Priority to EP03709157.6A priority patent/EP1485940B1/en
Priority to AU2003213114A priority patent/AU2003213114A1/en
Publication of WO2003073468A2 publication Critical patent/WO2003073468A2/en
Publication of WO2003073468A3 publication Critical patent/WO2003073468A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide

Abstract

Silicon carbide bipolar junction transistors having an overgrown base layer (18) are provided. The bipolar junction transistors can be made with a very thin (e.g., 0.3 µm or less) base layer while still possessing adequate peripheral base resistance values. Self aligning manufacturing techniques for making the silicon carbide bipolar junction transistors are also provided. Using these techniques, the spacing between emitter and base contacts on the device can be reduced. The silicon carbide bipolar junction transistors can also be provided with edge termination structures such as guard rings to increase the blocking capabilities of the device.
PCT/US2003/004873 2002-02-22 2003-02-21 Silicon carbide bipolar junction transistor with overgrown base region WO2003073468A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003572068A JP4774196B2 (en) 2002-02-22 2003-02-21 Silicon carbide bipolar junction transistor with grown base region
EP03709157.6A EP1485940B1 (en) 2002-02-22 2003-02-21 Silicon carbide bipolar junction transistor with overgrown base region
AU2003213114A AU2003213114A1 (en) 2002-02-22 2003-02-21 Silicon carbide bipolar junction transistor with overgrown base region

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/079,893 US6815304B2 (en) 2002-02-22 2002-02-22 Silicon carbide bipolar junction transistor with overgrown base region
US10/079,893 2002-02-22

Publications (2)

Publication Number Publication Date
WO2003073468A2 WO2003073468A2 (en) 2003-09-04
WO2003073468A3 true WO2003073468A3 (en) 2003-12-31

Family

ID=27752788

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/004873 WO2003073468A2 (en) 2002-02-22 2003-02-21 Silicon carbide bipolar junction transistor with overgrown base region

Country Status (5)

Country Link
US (1) US6815304B2 (en)
EP (1) EP1485940B1 (en)
JP (1) JP4774196B2 (en)
AU (1) AU2003213114A1 (en)
WO (1) WO2003073468A2 (en)

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WO2005052997A2 (en) * 2003-11-21 2005-06-09 Wisconsin Alumni Resarch Foundation Solid-state high power device and method
US6881638B1 (en) * 2003-11-26 2005-04-19 United Microelectronics Corp. Method of fabricating a bipolar junction transistor
US20050275056A1 (en) * 2004-05-26 2005-12-15 Stephen Forrest Organic heterojunction bipolar transistor
US7875523B1 (en) 2004-10-15 2011-01-25 Hrl Laboratories, Llc HBT with emitter electrode having planar side walls
US7598148B1 (en) 2004-10-15 2009-10-06 Fields Charles H Non-self-aligned heterojunction bipolar transistor and a method for preparing a non-self-aligned heterojunction bipolar transistor
US7396731B1 (en) * 2004-10-15 2008-07-08 Hrl Laboratories, Llc Method for preparing a non-self-aligned heterojunction bipolar transistor with a small emitter-to-base spacing
US20060261346A1 (en) * 2005-05-18 2006-11-23 Sei-Hyung Ryu High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same
US7615801B2 (en) * 2005-05-18 2009-11-10 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US7345310B2 (en) * 2005-12-22 2008-03-18 Cree, Inc. Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof
US7274083B1 (en) * 2006-05-02 2007-09-25 Semisouth Laboratories, Inc. Semiconductor device with surge current protection and method of making the same
SE532625C2 (en) * 2007-04-11 2010-03-09 Transic Ab Semiconductor component in silicon carbide
US8105911B2 (en) * 2008-09-30 2012-01-31 Northrop Grumman Systems Corporation Bipolar junction transistor guard ring structures and method of fabricating thereof
US7825487B2 (en) * 2008-09-30 2010-11-02 Northrop Grumman Systems Corporation Guard ring structures and method of fabricating thereof
US8212292B2 (en) 2009-11-20 2012-07-03 Freescale Semiconductor, Inc. High gain tunable bipolar transistor
SE1150065A1 (en) 2011-01-31 2012-07-17 Fairchild Semiconductor Silicon carbide bipolar transistor with overgrown emitter
US9755018B2 (en) * 2011-12-12 2017-09-05 Cree, Inc. Bipolar junction transistor structure for reduced current crowding
US9601605B2 (en) * 2012-04-04 2017-03-21 Cree, Inc. Bipolar junction transistor with improved avalanche capability
US9105717B2 (en) 2013-12-04 2015-08-11 Infineon Technologies Austria Ag Manufacturing a semiconductor device using electrochemical etching, semiconductor device and super junction semiconductor device
US9508711B2 (en) * 2013-12-04 2016-11-29 Infineon Technologies Ag Semiconductor device with bipolar junction transistor cells
WO2015120432A1 (en) * 2014-02-10 2015-08-13 United Silicon Carbide, Inc. Trenched and implanted bipolar junction transistor
CN110828538B (en) * 2018-08-07 2023-05-05 中国科学院微电子研究所 Bipolar transistor and preparation method thereof

Citations (1)

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US4916083A (en) * 1987-05-11 1990-04-10 International Business Machines Corporation High performance sidewall emitter transistor

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FR2335054A1 (en) * 1975-12-09 1977-07-08 Radiotechnique Compelec Transistor with flat epitaxial layer - has specified structure which is capable of handling high powers
US4762806A (en) 1983-12-23 1988-08-09 Sharp Kabushiki Kaisha Process for producing a SiC semiconductor device
US4945394A (en) 1987-10-26 1990-07-31 North Carolina State University Bipolar junction transistor on silicon carbide
US5726463A (en) 1992-08-07 1998-03-10 General Electric Company Silicon carbide MOSFET having self-aligned gate structure
US5323022A (en) 1992-09-10 1994-06-21 North Carolina State University Platinum ohmic contact to p-type silicon carbide
US6218254B1 (en) 1999-09-22 2001-04-17 Cree Research, Inc. Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices
ATE535010T1 (en) * 2001-07-12 2011-12-15 Univ Mississippi State METHOD FOR PRODUCING SELF-ALIGNED TRANSISTOR TOPOLOGIES IN SILICON CARBIDE BY USING SELECTIVE EPITAXY
US7132701B1 (en) * 2001-07-27 2006-11-07 Fairchild Semiconductor Corporation Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods

Patent Citations (1)

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US4916083A (en) * 1987-05-11 1990-04-10 International Business Machines Corporation High performance sidewall emitter transistor

Non-Patent Citations (1)

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See also references of EP1485940A4 *

Also Published As

Publication number Publication date
US6815304B2 (en) 2004-11-09
JP2006507659A (en) 2006-03-02
EP1485940A4 (en) 2008-03-12
EP1485940A2 (en) 2004-12-15
US20030160302A1 (en) 2003-08-28
EP1485940B1 (en) 2014-01-08
AU2003213114A1 (en) 2003-09-09
AU2003213114A8 (en) 2003-09-09
JP4774196B2 (en) 2011-09-14
WO2003073468A2 (en) 2003-09-04

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