WO2003063208A3 - Array-based architecture for molecular electronics - Google Patents

Array-based architecture for molecular electronics Download PDF

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Publication number
WO2003063208A3
WO2003063208A3 PCT/US2003/001555 US0301555W WO03063208A3 WO 2003063208 A3 WO2003063208 A3 WO 2003063208A3 US 0301555 W US0301555 W US 0301555W WO 03063208 A3 WO03063208 A3 WO 03063208A3
Authority
WO
WIPO (PCT)
Prior art keywords
array
nanoscale
arrays
based architecture
signal
Prior art date
Application number
PCT/US2003/001555
Other languages
French (fr)
Other versions
WO2003063208A2 (en
Inventor
Andre Dehon
Charles M Lieber
Original Assignee
California Inst Of Techn
Harvard College
Andre Dehon
Charles M Lieber
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by California Inst Of Techn, Harvard College, Andre Dehon, Charles M Lieber filed Critical California Inst Of Techn
Priority to EP03731986A priority Critical patent/EP1468423A2/en
Priority to AU2003216070A priority patent/AU2003216070A1/en
Publication of WO2003063208A2 publication Critical patent/WO2003063208A2/en
Publication of WO2003063208A3 publication Critical patent/WO2003063208A3/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/003—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/202—Integrated devices comprising a common active layer
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/75—Array having a NAND structure comprising, for example, memory cells in series or memory elements in series, a memory element being a memory cell in parallel with an access transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/701—Organic molecular electronic devices

Abstract

An architecture for nanoscale electronics is disclosed. The architecture comprises arrays of crossed nanoscale wires having selectively programmable crosspoints. Nanoscale wires of one array are shared by other arrays, thus providing signal propagation between the arrays. Nanoscale signal restoration elements are also provided, allowing an output of a first array to be used as an input to a second array. Signal restoration occurs without routing of the signal to non-nanoscalewires.
PCT/US2003/001555 2002-01-18 2003-01-17 Array-based architecture for molecular electronics WO2003063208A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP03731986A EP1468423A2 (en) 2002-01-18 2003-01-17 Array-based architecture for molecular electronics
AU2003216070A AU2003216070A1 (en) 2002-01-18 2003-01-17 Array-based architecture for molecular electronics

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US34956102P 2002-01-18 2002-01-18
US60/349,561 2002-01-18

Publications (2)

Publication Number Publication Date
WO2003063208A2 WO2003063208A2 (en) 2003-07-31
WO2003063208A3 true WO2003063208A3 (en) 2004-02-26

Family

ID=27613288

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/001555 WO2003063208A2 (en) 2002-01-18 2003-01-17 Array-based architecture for molecular electronics

Country Status (4)

Country Link
US (2) US7073157B2 (en)
EP (1) EP1468423A2 (en)
AU (1) AU2003216070A1 (en)
WO (1) WO2003063208A2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
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US9096429B2 (en) 2006-12-22 2015-08-04 Qunano Ab Nanoelectronic structure and method of producing such
US9390951B2 (en) 2009-05-26 2016-07-12 Sharp Kabushiki Kaisha Methods and systems for electric field deposition of nanowires and other devices

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