WO2003060447A8 - Temperature measurement and heat-treating methods and systems - Google Patents

Temperature measurement and heat-treating methods and systems

Info

Publication number
WO2003060447A8
WO2003060447A8 PCT/CA2002/001987 CA0201987W WO03060447A8 WO 2003060447 A8 WO2003060447 A8 WO 2003060447A8 CA 0201987 W CA0201987 W CA 0201987W WO 03060447 A8 WO03060447 A8 WO 03060447A8
Authority
WO
WIPO (PCT)
Prior art keywords
temperature
device side
previous
response
identified
Prior art date
Application number
PCT/CA2002/001987
Other languages
French (fr)
Other versions
WO2003060447A1 (en
Inventor
David Malcolm Camm
Shawna Kervin
Marcel Edmond Lefrancois
Greg Stuart
Original Assignee
Vortek Ind Ltd
David Malcolm Camm
Shawna Kervin
Marcel Edmond Lefrancois
Greg Stuart
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vortek Ind Ltd, David Malcolm Camm, Shawna Kervin, Marcel Edmond Lefrancois, Greg Stuart filed Critical Vortek Ind Ltd
Priority to DE10297622.8T priority Critical patent/DE10297622B4/en
Priority to US10/497,447 priority patent/US7445382B2/en
Priority to JP2003560494A priority patent/JP2005515425A/en
Priority to AU2002350358A priority patent/AU2002350358A1/en
Priority to KR1020047010182A priority patent/KR101067901B1/en
Publication of WO2003060447A1 publication Critical patent/WO2003060447A1/en
Publication of WO2003060447A8 publication Critical patent/WO2003060447A8/en
Priority to US11/302,600 priority patent/US7616872B2/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67248Temperature monitoring
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67276Production flow monitoring, e.g. for increasing throughput
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67115Apparatus for thermal treatment mainly by radiation

Abstract

Temperature measurement and heat-treating methods and systems. One method includes measuring a present intensity of radiation thermally emitted from a first surface of a workpiece, and identifying a present temperature of the first surface in response to the present intensity and at least one previous thermal property of the first surface. Preferably, the workpiece includes a semiconductor wafer, and the first and second surfaces respectively include device and substrate sides thereof. The present temperature of the device side is preferably identified while the device side is being irradiated, e.g. by an irradiance flash having a duration less than a thermal conduction time of the wafer. The device side temperature may be identified in response to a previous device side temperature, which may be identified in response to a previous temperature of the substrate side unequal to the previous device side temperature, and a temperature history of the wafer.
PCT/CA2002/001987 2001-12-26 2002-12-23 Temperature measurement and heat-treating methods and systems WO2003060447A1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE10297622.8T DE10297622B4 (en) 2001-12-26 2002-12-23 Temperature measurement and methods and systems for heat treatment
US10/497,447 US7445382B2 (en) 2001-12-26 2002-12-23 Temperature measurement and heat-treating methods and system
JP2003560494A JP2005515425A (en) 2001-12-26 2002-12-23 Temperature measurement and heat treatment method and system
AU2002350358A AU2002350358A1 (en) 2001-12-26 2002-12-23 Temperature measurement and heat-treating methods and systems
KR1020047010182A KR101067901B1 (en) 2001-12-26 2002-12-23 Temperature measurement and heat-treating methods and systems
US11/302,600 US7616872B2 (en) 2001-12-26 2005-12-14 Temperature measurement and heat-treating methods and systems

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US34211501P 2001-12-26 2001-12-26
US60/342,115 2001-12-26

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US10497447 A-371-Of-International 2002-12-23
US11/302,600 Continuation US7616872B2 (en) 2001-12-26 2005-12-14 Temperature measurement and heat-treating methods and systems

Publications (2)

Publication Number Publication Date
WO2003060447A1 WO2003060447A1 (en) 2003-07-24
WO2003060447A8 true WO2003060447A8 (en) 2003-12-04

Family

ID=23340390

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CA2002/001987 WO2003060447A1 (en) 2001-12-26 2002-12-23 Temperature measurement and heat-treating methods and systems

Country Status (7)

Country Link
US (2) US7445382B2 (en)
JP (3) JP2005515425A (en)
KR (2) KR101067902B1 (en)
CN (2) CN101324470B (en)
AU (1) AU2002350358A1 (en)
DE (1) DE10297622B4 (en)
WO (1) WO2003060447A1 (en)

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6594446B2 (en) * 2000-12-04 2003-07-15 Vortek Industries Ltd. Heat-treating methods and systems
AU2002350358A1 (en) * 2001-12-26 2003-07-30 Vortek Indusries Ltd. Temperature measurement and heat-treating methods and systems
US6849831B2 (en) * 2002-03-29 2005-02-01 Mattson Technology, Inc. Pulsed processing semiconductor heating methods using combinations of heating sources
AU2003287837A1 (en) 2002-12-20 2004-07-14 Vortek Industries Ltd Methods and systems for supporting a workpiece and for heat-treating the workpiece
US7115837B2 (en) 2003-07-28 2006-10-03 Mattson Technology, Inc. Selective reflectivity process chamber with customized wavelength response and method
WO2005059991A1 (en) * 2003-12-19 2005-06-30 Mattson Technology Canada Inc. Apparatuses and methods for suppressing thermally induced motion of a workpiece
US7220378B2 (en) * 2004-01-07 2007-05-22 Pressco Technology Inc. Method and apparatus for the measurement and control of both the inside and outside surface temperature of thermoplastic preforms during stretch blow molding operations
US7781947B2 (en) * 2004-02-12 2010-08-24 Mattson Technology Canada, Inc. Apparatus and methods for producing electromagnetic radiation
US7364355B2 (en) * 2004-06-24 2008-04-29 Ircon, Inc. Method and apparatus for obtaining a temperature measurement using an InGaAs detector
JP4925571B2 (en) * 2004-08-09 2012-04-25 アプライド マテリアルズ インコーポレイテッド Method for determining thermal properties of substrate and method for determining heat treatment conditions
US7438468B2 (en) * 2004-11-12 2008-10-21 Applied Materials, Inc. Multiple band pass filtering for pyrometry in laser based annealing systems
US10687391B2 (en) * 2004-12-03 2020-06-16 Pressco Ip Llc Method and system for digital narrowband, wavelength specific cooking, curing, food preparation, and processing
US7425296B2 (en) 2004-12-03 2008-09-16 Pressco Technology Inc. Method and system for wavelength specific thermal irradiation and treatment
US10857722B2 (en) 2004-12-03 2020-12-08 Pressco Ip Llc Method and system for laser-based, wavelength specific infrared irradiation treatment
CN101258387A (en) * 2005-07-05 2008-09-03 马特森技术公司 Method and system for determining optical properties of semiconductor wafers
DE102005038672A1 (en) * 2005-08-16 2007-02-22 Mattson Thermal Products Gmbh Thermal treatment device for semiconductor substrates, uses reflection element with high reflection capability for radiation from heating device
CN101288035B (en) * 2005-09-14 2013-06-19 马特森技术有限公司 Repeatable heat-treating methods and apparatus
US7184657B1 (en) 2005-09-17 2007-02-27 Mattson Technology, Inc. Enhanced rapid thermal processing apparatus and method
GB0602351D0 (en) * 2006-02-06 2006-03-15 Land Instr Int Ltd Improved portable radiation thermometer
US7543981B2 (en) * 2006-06-29 2009-06-09 Mattson Technology, Inc. Methods for determining wafer temperature
JP5967859B2 (en) * 2006-11-15 2016-08-10 マトソン テクノロジー、インコーポレイテッド System and method for supporting a workpiece during heat treatment
JP5214153B2 (en) * 2007-02-09 2013-06-19 大日本スクリーン製造株式会社 Heat treatment equipment
WO2008131513A1 (en) * 2007-05-01 2008-11-06 Mattson Technology Canada, Inc. Irradiance pulse heat-treating methods and apparatus
US8408786B2 (en) * 2007-05-04 2013-04-02 Massachusetts Institute Of Technology (Mit) Optical characterization of photonic integrated circuits
JP5346484B2 (en) 2008-04-16 2013-11-20 大日本スクリーン製造株式会社 Heat treatment method and heat treatment apparatus
JP5356725B2 (en) * 2008-05-13 2013-12-04 大日本スクリーン製造株式会社 Heat treatment equipment
KR101610269B1 (en) 2008-05-16 2016-04-07 맷슨 테크놀로지, 인크. Workpiece breakage prevention method and apparatus
US8581153B2 (en) * 2008-09-30 2013-11-12 Tokyo Electron Limited Method of detecting abnormal placement of substrate, substrate processing method, computer-readable storage medium, and substrate processing apparatus
SG175022A1 (en) * 2009-04-21 2011-11-28 Applied Materials Inc Substrate cool down control
US8129284B2 (en) * 2009-04-28 2012-03-06 Dainippon Screen Mfg. Co., Ltd. Heat treatment method and heat treatment apparatus for heating substrate by light irradiation
US9756262B2 (en) * 2009-06-03 2017-09-05 Flir Systems, Inc. Systems and methods for monitoring power systems
KR101097348B1 (en) * 2010-03-11 2011-12-23 삼성모바일디스플레이주식회사 Crystallization apparatus, crystallization method, method of manufacturing thin film transistor and method of manufacturing organic light emitting display apparatus
JP5606852B2 (en) * 2010-09-27 2014-10-15 大日本スクリーン製造株式会社 Heat treatment apparatus and heat treatment method
JP2012074430A (en) 2010-09-28 2012-04-12 Dainippon Screen Mfg Co Ltd Heat treatment device and heat treatment method
KR101733179B1 (en) 2010-10-15 2017-05-08 맛선 테크놀러지, 인코포레이티드 Methods, apparatus and media for determining a shape of an irradiance pulse to which a workpiece is to be exposed
US20120063485A1 (en) * 2011-03-28 2012-03-15 Primestar Solar, Inc. Thermal endurance testing apparatus and methods for photovoltaic modules
JP5819633B2 (en) 2011-05-13 2015-11-24 株式会社Screenホールディングス Heat treatment apparatus and heat treatment method
JP5855353B2 (en) * 2011-05-13 2016-02-09 株式会社Screenホールディングス Heat treatment apparatus and heat treatment method
KR101829676B1 (en) * 2011-12-29 2018-02-20 삼성전자주식회사 Method of thermally treating wafer
US9449825B2 (en) * 2012-02-03 2016-09-20 SCREEN Holdings Co., Ltd. Heat treatment apparatus for heating substrate by irradiation with flashes of light, and heat treatment method
KR101315772B1 (en) 2012-02-29 2013-10-10 현대자동차주식회사 Analysis system and method for visualizing heat conduction of a sample
WO2013181263A1 (en) * 2012-05-30 2013-12-05 Applied Materials, Inc. Apparatus and methods for rapid thermal processing
CN103824903B (en) * 2012-11-16 2017-04-12 同方光电科技有限公司 Substrate processing method for improving emission compensation temperature measurement accuracy or consistency
KR20140091203A (en) * 2013-01-10 2014-07-21 삼성전자주식회사 An apparatus and method to reduce the residual stress of semiconductor
US20140270731A1 (en) * 2013-03-12 2014-09-18 Applied Materials, Inc. Thermal management apparatus for solid state light source arrays
US9212949B2 (en) * 2014-03-28 2015-12-15 Varian Semiconductor Equipment Associates, Inc. Technique for temperature measurement and calibration of semiconductor workpieces using infrared
US9696210B2 (en) * 2014-06-16 2017-07-04 Honeywell International Inc. Extended temperature range mapping process of a furnace enclosure using various device settings
US9664568B2 (en) * 2014-06-16 2017-05-30 Honeywell International Inc. Extended temperature mapping process of a furnace enclosure with multi-spectral image-capturing device
US10139285B2 (en) * 2014-12-23 2018-11-27 Advanced Energy Industries, Inc. Fully-differential amplification for pyrometry
JP6654374B2 (en) 2015-08-17 2020-02-26 株式会社Screenホールディングス Heat treatment method and heat treatment apparatus
CN105352988B (en) * 2015-10-23 2018-03-27 吉林省智星红外科技有限公司 A kind of skin heat-insulating property assessment system and method
JP6772258B2 (en) * 2015-12-30 2020-10-21 マトソン テクノロジー インコーポレイテッドMattson Technology, Inc. Preheating method for millisecond annealing system
WO2017116708A1 (en) * 2015-12-30 2017-07-06 Mattson Technology, Inc. Features for improving process uniformity in a millisecond anneal system
EP3255421B1 (en) 2016-06-10 2020-01-01 coatmaster AG Device for the contactless and non-destructive testing of a surface by measuring its infrared radiation
US10670475B2 (en) * 2016-12-02 2020-06-02 Microsanj, LLC Method and system for thermal imaging with optical emissions from a device under test
CN111032889B (en) * 2017-08-16 2022-04-08 玛特森技术公司 Hot working of closed-form workpieces
DE112019001415T5 (en) 2018-03-20 2020-12-10 Beijing E-Town Semiconductor Technology, Co., Ltd. Carrier plate for local heating in thermal processing systems
CN112385028A (en) * 2018-04-12 2021-02-19 玛特森技术公司 Low thermal budget annealing
JP6531310B1 (en) * 2018-04-17 2019-06-19 株式会社エコファースト Monitoring system
US10962417B2 (en) 2018-06-08 2021-03-30 Lawrence Livermore National Security, Llc Non-destructive, in-situ evaluation of water presence using thermal contrast and cooled detector
WO2020003894A1 (en) * 2018-06-25 2020-01-02 株式会社Screenホールディングス Heat processing method and heat processing device
US11087962B2 (en) * 2018-07-20 2021-08-10 Lam Research Corporation Real-time control of temperature in a plasma chamber
WO2020185657A1 (en) * 2019-03-14 2020-09-17 Mattson Technology, Inc. Thermal processing system with temperature non-uniformity control
US11812523B2 (en) * 2019-06-13 2023-11-07 Beijing E-Town Semiconductor Technology, Co., Ltd Thermal processing system with transmission switch plate
CN111100980B (en) * 2019-11-27 2021-11-23 安徽添御石油设备制造有限公司 Heating control method for heat treatment of petroleum fracturing pump valve box
JP7355641B2 (en) 2019-12-24 2023-10-03 株式会社Screenホールディングス Heat treatment equipment and heat treatment method
WO2021173682A1 (en) 2020-02-28 2021-09-02 Mattson Technology, Inc. Transmission-based temperature measurement of a workpiece in a thermal processing system
KR102633402B1 (en) * 2020-03-30 2024-02-06 (주)씨앤테크 A temperature measuring apparatus and a temperature measuring method using a reflector
CN113471046B (en) 2020-12-14 2023-06-20 北京屹唐半导体科技股份有限公司 Workpiece processing apparatus having plasma processing system and thermal processing system

Family Cites Families (180)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US572701A (en) * 1896-12-08 Puzzle or game device
USRE24296E (en) 1957-03-26 Apparatus for infra-red cooking
US2981819A (en) 1961-04-25 Heater construction for kiln or other apparatus
US530816A (en) * 1894-05-11 1894-12-11 George wright
US1587023A (en) 1922-02-17 1926-06-01 Mecky Company A Multiple-reflector single-unit combined toaster and cooker
NL133151C (en) 1959-05-28 1900-01-01
US3108173A (en) 1960-07-22 1963-10-22 Lakeshire Products Inc Infra-red heating apparatus
US3160517A (en) 1961-11-13 1964-12-08 Union Carbide Corp Method of depositing metals and metallic compounds throughout the pores of a porous body
US3213827A (en) 1962-03-13 1965-10-26 Union Carbide Corp Apparatus for gas plating bulk material to metallize the same
US3240915A (en) 1962-09-19 1966-03-15 Fostoria Corp Infra-red heater
US3227065A (en) 1963-06-07 1966-01-04 Alan L Litman Waterless egg cooker
US3239651A (en) 1963-08-21 1966-03-08 Ekco Products Company Heating unit
US3502516A (en) 1964-11-06 1970-03-24 Siemens Ag Method for producing pure semiconductor material for electronic purposes
US3460510A (en) 1966-05-12 1969-08-12 Dow Corning Large volume semiconductor coating reactor
US3627590A (en) 1968-12-02 1971-12-14 Western Electric Co Method for heat treatment of workpieces
DE1900116C3 (en) 1969-01-02 1978-10-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for the production of high-purity monocrystalline layers consisting of silicon
US3692572A (en) 1969-08-12 1972-09-19 Wolfgang Strehlow Epitaxial film process and products thereof
US3623712A (en) 1969-10-15 1971-11-30 Applied Materials Tech Epitaxial radiation heated reactor and process
US3700850A (en) 1970-09-04 1972-10-24 Western Electric Co Method for detecting the amount of material removed by a laser
US3913872A (en) 1973-01-18 1975-10-21 Bell & Howell Co Light tunnel for uniformly illuminating an object
US3836751A (en) 1973-07-26 1974-09-17 Applied Materials Inc Temperature controlled profiling heater
GB1485908A (en) 1974-05-21 1977-09-14 Nath G Apparatus for applying light radiation
US4027185A (en) 1974-06-13 1977-05-31 Canadian Patents And Development Limited High intensity radiation source
US4151008A (en) 1974-11-15 1979-04-24 Spire Corporation Method involving pulsed light processing of semiconductor devices
US4081313A (en) 1975-01-24 1978-03-28 Applied Materials, Inc. Process for preparing semiconductor wafers with substantially no crystallographic slip
US4041278A (en) 1975-05-19 1977-08-09 General Electric Company Heating apparatus for temperature gradient zone melting
US4115163A (en) 1976-01-08 1978-09-19 Yulia Ivanovna Gorina Method of growing epitaxial semiconductor films utilizing radiant heating
CA1095387A (en) 1976-02-17 1981-02-10 Conrad M. Banas Skin melting
US4224096A (en) 1976-03-25 1980-09-23 W. R. Grace & Co. Laser sealing of thermoplastic material
US4097226A (en) 1976-10-26 1978-06-27 General Electric Company Furnace for practising temperature gradient zone melting
US4101759A (en) 1976-10-26 1978-07-18 General Electric Company Semiconductor body heater
JPS54103174A (en) 1978-01-31 1979-08-14 Tokyo Shibaura Electric Co Cooking instrument
JPS583478B2 (en) 1978-03-03 1983-01-21 株式会社日立製作所 Laser heating method and device
US4164643A (en) 1978-03-06 1979-08-14 Dewitt David P Energy-efficient bi-radiant oven system
FR2435818A1 (en) 1978-09-08 1980-04-04 Ibm France PROCESS FOR INCREASING THE INTERNAL TRAPPING EFFECT OF SEMICONDUCTOR BODIES
US4370175A (en) 1979-12-03 1983-01-25 Bernard B. Katz Method of annealing implanted semiconductors by lasers
JPS56100412A (en) 1979-12-17 1981-08-12 Sony Corp Manufacture of semiconductor device
US4306731A (en) 1979-12-21 1981-12-22 Varian Associates, Inc. Wafer support assembly
JPS56100426A (en) 1980-01-14 1981-08-12 Ushio Inc Device and method for annealing
US4356384A (en) 1980-03-03 1982-10-26 Arnon Gat Method and means for heat treating semiconductor material using high intensity CW lamps
US4331485A (en) 1980-03-03 1982-05-25 Arnon Gat Method for heat treating semiconductor material using high intensity CW lamps
JPS56142630A (en) 1980-04-09 1981-11-07 Fujitsu Ltd Manufacture of semiconductor device
US4308078A (en) 1980-06-06 1981-12-29 Cook Melvin S Method of producing single-crystal semiconductor films by laser treatment
JPS5750427A (en) 1980-09-12 1982-03-24 Ushio Inc Annealing device and annealing method
US4379727A (en) 1981-07-08 1983-04-12 International Business Machines Corporation Method of laser annealing of subsurface ion implanted regions
US4431459A (en) 1981-07-17 1984-02-14 National Semiconductor Corporation Fabrication of MOSFETs by laser annealing through anti-reflective coating
US4421048A (en) 1981-10-22 1983-12-20 The United States Of America As Represented By The Secretary Of The Navy Situ incineration/detoxification system for antifouling coatings
JPS58219201A (en) * 1982-06-16 1983-12-20 Hitachi Ltd Measuring method for polymerization ratio
JPS59928A (en) 1982-06-25 1984-01-06 Ushio Inc Photo heating device
FR2532783A1 (en) 1982-09-07 1984-03-09 Vu Duy Phach THERMAL PROCESSING MACHINE FOR SEMICONDUCTORS
JPS5959876A (en) 1982-09-30 1984-04-05 Ushio Inc Operating method of light irradiation furnace
JPS5977289A (en) 1982-10-26 1984-05-02 ウシオ電機株式会社 Beam irradiating furnace
GB2136937A (en) 1983-03-18 1984-09-26 Philips Electronic Associated A furnace for rapidly heating semiconductor bodies
JPS59193024A (en) 1983-03-29 1984-11-01 Ushio Inc Flash irradiation device
US4539431A (en) 1983-06-06 1985-09-03 Sera Solar Corporation Pulse anneal method for solar cell
US5231595A (en) 1983-06-06 1993-07-27 Minolta Camera Kabushiki Kaisha Pyrometer
US4550684A (en) 1983-08-11 1985-11-05 Genus, Inc. Cooled optical window for semiconductor wafer heating
KR910004158B1 (en) 1983-08-15 1991-06-22 Sinagawa Sirotenga Co Ltd Thermal deformation measuring system of ceranics and the like
US4698486A (en) 1984-02-28 1987-10-06 Tamarack Scientific Co., Inc. Method of heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc.
US4649261A (en) 1984-02-28 1987-03-10 Tamarack Scientific Co., Inc. Apparatus for heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc.
US4649241A (en) 1984-11-09 1987-03-10 Siemens-Allis, Inc. Solenoid actuated high speed, high current making switch with a movable contact ring
CA1239437A (en) 1984-12-24 1988-07-19 Vortek Industries Ltd. High intensity radiation method and apparatus having improved liquid vortex flow
JPS61198735A (en) * 1985-02-28 1986-09-03 Fujitsu Ltd Flash-lamp annealing device
US4682594A (en) 1985-03-11 1987-07-28 Mcm Laboratories, Inc. Probe-and-fire lasers
HU198339B (en) 1985-05-10 1989-09-28 Budapesti Mueszaki Egyetem Method and measuring probe for simultaneous local detection of thermophysical characteristics, first of all, of thermal conductivity and coefficient of temperature distribution
US4661177A (en) 1985-10-08 1987-04-28 Varian Associates, Inc. Method for doping semiconductor wafers by rapid thermal processing of solid planar diffusion sources
FR2594529B1 (en) 1986-02-19 1990-01-26 Bertin & Cie APPARATUS FOR HEAT TREATMENT OF THIN PARTS, SUCH AS SILICON WAFERS
JPS63188940A (en) * 1987-01-30 1988-08-04 Nikon Corp System for heating by light
US4890245A (en) * 1986-09-22 1989-12-26 Nikon Corporation Method for measuring temperature of semiconductor substrate and apparatus therefor
US5514885A (en) * 1986-10-09 1996-05-07 Myrick; James J. SOI methods and apparatus
US4751193A (en) 1986-10-09 1988-06-14 Q-Dot, Inc. Method of making SOI recrystallized layers by short spatially uniform light pulses
US4794619A (en) 1986-12-05 1988-12-27 Conax Buffalo Corporation Optical fiber temperature sensor
US4755654A (en) 1987-03-26 1988-07-05 Crowley John L Semiconductor wafer heating chamber
US4787551A (en) 1987-05-04 1988-11-29 Stanford University Method of welding thermocouples to silicon wafers for temperature monitoring in rapid thermal processing
US4818327A (en) 1987-07-16 1989-04-04 Texas Instruments Incorporated Wafer processing apparatus
US4826269A (en) 1987-10-16 1989-05-02 Spectra Diode Laboratories, Inc. Diode laser arrangement forming bright image
DE3739862A1 (en) 1987-11-25 1989-06-08 Bosch Gmbh Robert WORKPIECE MACHINING DEVICE
US4851358A (en) 1988-02-11 1989-07-25 Dns Electronic Materials, Inc. Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing
US4857689A (en) 1988-03-23 1989-08-15 High Temperature Engineering Corporation Rapid thermal furnace for semiconductor processing
US5188458A (en) 1988-04-27 1993-02-23 A G Processing Technologies, Inc. Pyrometer apparatus and method
US4981815A (en) 1988-05-09 1991-01-01 Siemens Aktiengesellschaft Method for rapidly thermally processing a semiconductor wafer by irradiation using semicircular or parabolic reflectors
KR0155545B1 (en) 1988-06-27 1998-12-01 고다까 토시오 Apparatus for heat-treating a substrate
KR960013995B1 (en) * 1988-07-15 1996-10-11 도오교오 에레구토론 가부시끼가이샤 Method for measuring surface temperature of semiconductor wafer substrate and heat-treating apparatus
US4956538A (en) 1988-09-09 1990-09-11 Texas Instruments, Incorporated Method and apparatus for real-time wafer temperature measurement using infrared pyrometry in advanced lamp-heated rapid thermal processors
US4891499A (en) 1988-09-09 1990-01-02 Texas Instruments Incorporated Method and apparatus for real-time wafer temperature uniformity control and slip-free heating in lamp heated single-wafer rapid thermal processing systems
US4937490A (en) 1988-12-19 1990-06-26 Vortek Industries Ltd. High intensity radiation apparatus and fluid recirculating system therefor
US4959244A (en) 1989-03-27 1990-09-25 General Electric Company Temperature measurement and control for photohermal processes
US5249142A (en) * 1989-03-31 1993-09-28 Tokyo Electron Kyushu Limited Indirect temperature-measurement of films formed on semiconductor wafers
US4984902A (en) 1989-04-13 1991-01-15 Peak Systems, Inc. Apparatus and method for compensating for errors in temperature measurement of semiconductor wafers during rapid thermal processing
US5011794A (en) 1989-05-01 1991-04-30 At&T Bell Laboratories Procedure for rapid thermal annealing of implanted semiconductors
US5002630A (en) 1989-06-06 1991-03-26 Rapro Technology Method for high temperature thermal processing with reduced convective heat loss
JP2923008B2 (en) * 1989-12-11 1999-07-26 株式会社日立製作所 Film forming method and film forming apparatus
US5155337A (en) 1989-12-21 1992-10-13 North Carolina State University Method and apparatus for controlling rapid thermal processing systems
US5282017A (en) 1990-01-05 1994-01-25 Quantum Logic Corporation Reflectance probe
US5155336A (en) 1990-01-19 1992-10-13 Applied Materials, Inc. Rapid thermal heating apparatus and method
US6016383A (en) * 1990-01-19 2000-01-18 Applied Materials, Inc. Rapid thermal heating apparatus and method including an infrared camera to measure substrate temperature
US5073698A (en) 1990-03-23 1991-12-17 Peak Systems, Inc. Method for selectively heating a film on a substrate
US5310260A (en) 1990-04-10 1994-05-10 Luxtron Corporation Non-contact optical techniques for measuring surface conditions
US5271084A (en) 1990-05-23 1993-12-14 Interuniversitair Micro Elektronica Centrum Vzw Method and device for measuring temperature radiation using a pyrometer wherein compensation lamps are used
US5258824A (en) 1990-08-09 1993-11-02 Applied Materials, Inc. In-situ measurement of a thin film deposited on a wafer
JPH04152518A (en) 1990-10-16 1992-05-26 Toshiba Corp Manufacture of semiconductor device
US5317429A (en) * 1990-11-28 1994-05-31 Fujitsu Limited Trilayer nematic liquid crystal optical switching device
US5293216A (en) 1990-12-31 1994-03-08 Texas Instruments Incorporated Sensor for semiconductor device manufacturing process control
JPH04243123A (en) 1991-01-17 1992-08-31 Mitsubishi Electric Corp Semiconductor manufacturing apparatus
DE4109956A1 (en) * 1991-03-26 1992-10-01 Siemens Ag METHOD FOR SHORT-TEMPERATURE A SEMICONDUCTOR DISC BY IRRADIATION
LU87933A1 (en) * 1991-05-02 1992-12-15 Europ Communities METHOD AND DEVICE FOR CALIBRATING AN OPTICAL PYROMETER AND CORRESPONDING CALIBRATION PLATES
US5255286A (en) 1991-05-17 1993-10-19 Texas Instruments Incorporated Multi-point pyrometry with real-time surface emissivity compensation
US5508934A (en) * 1991-05-17 1996-04-16 Texas Instruments Incorporated Multi-point semiconductor wafer fabrication process temperature control system
US5317656A (en) * 1991-05-17 1994-05-31 Texas Instruments Incorporated Fiber optic network for multi-point emissivity-compensated semiconductor wafer pyrometry
US5213985A (en) * 1991-05-22 1993-05-25 Bell Communications Research, Inc. Temperature measurement in a processing chamber using in-situ monitoring of photoluminescence
JP3466633B2 (en) 1991-06-12 2003-11-17 ソニー株式会社 Annealing method for polycrystalline semiconductor layer
DE4223133A1 (en) * 1991-07-15 1993-01-21 T Elektronik Gmbh As Rapid thermal processing of sensitive devices - using heat source programme control to avoid defects in e.g. semiconductor devices
JP3334162B2 (en) * 1992-02-17 2002-10-15 株式会社日立製作所 Vacuum processing apparatus, film forming apparatus and film forming method using the same
US5387557A (en) * 1991-10-23 1995-02-07 F. T. L. Co., Ltd. Method for manufacturing semiconductor devices using heat-treatment vertical reactor with temperature zones
US5196353A (en) 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
JPH05216099A (en) * 1992-01-31 1993-08-27 Canon Inc Camera and stroboscopic device
US5313044A (en) 1992-04-28 1994-05-17 Duke University Method and apparatus for real-time wafer temperature and thin film growth measurement and control in a lamp-heated rapid thermal processor
JP3211394B2 (en) * 1992-08-13 2001-09-25 ソニー株式会社 Method for manufacturing semiconductor device
US5418885A (en) * 1992-12-29 1995-05-23 North Carolina State University Three-zone rapid thermal processing system utilizing wafer edge heating means
US5444217A (en) * 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
US5308161A (en) * 1993-02-11 1994-05-03 Quantum Logic Corporation Pyrometer apparatus for use in rapid thermal processing of semiconductor wafers
US5350236A (en) * 1993-03-08 1994-09-27 Micron Semiconductor, Inc. Method for repeatable temperature measurement using surface reflectivity
US5305417A (en) 1993-03-26 1994-04-19 Texas Instruments Incorporated Apparatus and method for determining wafer temperature using pyrometry
JPH06295915A (en) * 1993-04-09 1994-10-21 F T L:Kk Manufacturing device for semiconductor device and manufacture of semiconductor device
US5501637A (en) * 1993-08-10 1996-03-26 Texas Instruments Incorporated Temperature sensor and method
TW266230B (en) * 1993-09-09 1995-12-21 Tokyo Electron Co Ltd
US5388909A (en) * 1993-09-16 1995-02-14 Johnson; Shane R. Optical apparatus and method for measuring temperature of a substrate material with a temperature dependent band gap
KR100255961B1 (en) * 1994-03-11 2000-05-01 아끼구사 나오유끼 Method and device for measuring physical quantity, method for fabricating semiconductor device, and method and device for measuring wavelength
DE4414391C2 (en) * 1994-04-26 2001-02-01 Steag Rtp Systems Gmbh Method for wave vector selective pyrometry in rapid heating systems
CN1269196C (en) * 1994-06-15 2006-08-09 精工爱普生株式会社 Method for making thin-film semiconductor device
US5667300A (en) * 1994-06-22 1997-09-16 Mandelis; Andreas Non-contact photothermal method for measuring thermal diffusivity and electronic defect properties of solids
JPH0855810A (en) * 1994-08-16 1996-02-27 Nec Kyushu Ltd Diffusion furnace
US5683180A (en) * 1994-09-13 1997-11-04 Hughes Aircraft Company Method for temperature measurement of semiconducting substrates having optically opaque overlayers
US5638396A (en) * 1994-09-19 1997-06-10 Textron Systems Corporation Laser ultrasonics-based material analysis system and method
US5601366A (en) * 1994-10-25 1997-02-11 Texas Instruments Incorporated Method for temperature measurement in rapid thermal process systems
US5738440A (en) * 1994-12-23 1998-04-14 International Business Machines Corp. Combined emissivity and radiance measurement for the determination of the temperature of a radiant object
US5517359A (en) * 1995-01-23 1996-05-14 Gelbart; Daniel Apparatus for imaging light from a laser diode onto a multi-channel linear light valve
DE69500046T2 (en) * 1995-02-18 1997-01-30 Hewlett Packard Gmbh Assembly with improved thermal characteristics
JP3568271B2 (en) * 1995-03-27 2004-09-22 株式会社超高温材料研究所 Method and apparatus for measuring thermal constant using laser flash method
DE19513749B4 (en) * 1995-04-11 2004-07-01 Infineon Technologies Ag Method and device for determining the emission factor of semiconductor materials by irradiation with electromagnetic waves
US5715361A (en) * 1995-04-13 1998-02-03 Cvc Products, Inc. Rapid thermal processing high-performance multizone illuminator for wafer backside heating
US5597237A (en) * 1995-05-30 1997-01-28 Quantum Logic Corp Apparatus for measuring the emissivity of a semiconductor wafer
KR100274293B1 (en) * 1995-06-26 2001-01-15 야스카와 히데아키 Crystalline semiconductor film forming method, thin film transistor manufacturing method, solar cell manufacturing method and active matrix liquid crystal device
US6051483A (en) * 1996-11-12 2000-04-18 International Business Machines Corporation Formation of ultra-shallow semiconductor junction using microwave annealing
US5809211A (en) * 1995-12-11 1998-09-15 Applied Materials, Inc. Ramping susceptor-wafer temperature using a single temperature input
US5756369A (en) * 1996-07-11 1998-05-26 Lsi Logic Corporation Rapid thermal processing using a narrowband infrared source and feedback
US5937142A (en) * 1996-07-11 1999-08-10 Cvc Products, Inc. Multi-zone illuminator for rapid thermal processing
US6536131B2 (en) * 1996-07-15 2003-03-25 Semitool, Inc. Wafer handling system
US5963840A (en) * 1996-11-13 1999-10-05 Applied Materials, Inc. Methods for depositing premetal dielectric layer at sub-atmospheric and high temperature conditions
US5841110A (en) * 1997-08-27 1998-11-24 Steag-Ast Gmbh Method and apparatus for improved temperature control in rapid thermal processing (RTP) systems
DE19748088A1 (en) * 1997-10-30 1999-05-12 Wacker Siltronic Halbleitermat Method and device for detecting a misalignment of a semiconductor wafer
US6187616B1 (en) * 1998-02-13 2001-02-13 Seiko Epson Corporation Method for fabricating semiconductor device and heat treatment apparatus
US6183130B1 (en) * 1998-02-20 2001-02-06 Applied Materials, Inc. Apparatus for substrate temperature measurement using a reflecting cavity and detector
US6056434A (en) * 1998-03-12 2000-05-02 Steag Rtp Systems, Inc. Apparatus and method for determining the temperature of objects in thermal processing chambers
US6541287B2 (en) * 1998-03-19 2003-04-01 Kabushiki Kaisha Toshiba Temperature measuring method and apparatus, measuring method for the thickness of the formed film, measuring apparatus for the thickness of the formed film thermometer for wafers
US6217034B1 (en) * 1998-09-24 2001-04-17 Kla-Tencor Corporation Edge handling wafer chuck
US6183127B1 (en) * 1999-03-29 2001-02-06 Eaton Corporation System and method for the real time determination of the in situ emissivity of a workpiece during processing
KR100655250B1 (en) * 1999-03-30 2006-12-08 동경 엘렉트론 주식회사 Temperature measuring system
US6303411B1 (en) * 1999-05-03 2001-10-16 Vortek Industries Ltd. Spatially resolved temperature measurement and irradiance control
US6349270B1 (en) * 1999-05-27 2002-02-19 Emcore Corporation Method and apparatus for measuring the temperature of objects on a fast moving holder
US6621199B1 (en) 2000-01-21 2003-09-16 Vortek Industries Ltd. High intensity electromagnetic radiation apparatus and method
US6531681B1 (en) * 2000-03-27 2003-03-11 Ultratech Stepper, Inc. Apparatus having line source of radiant energy for exposing a substrate
US6376806B2 (en) * 2000-05-09 2002-04-23 Woo Sik Yoo Flash anneal
JP3430258B2 (en) * 2000-10-17 2003-07-28 独立行政法人産業技術総合研究所 Measurement method of thermal diffusivity and interfacial thermal resistance
US6594446B2 (en) 2000-12-04 2003-07-15 Vortek Industries Ltd. Heat-treating methods and systems
DE10197002B3 (en) 2000-12-04 2017-11-23 Mattson Technology Inc. Method and system for heat treatment
JP3798674B2 (en) * 2001-10-29 2006-07-19 大日本スクリーン製造株式会社 Heat treatment apparatus and heat treatment method
US7071714B2 (en) * 2001-11-02 2006-07-04 Formfactor, Inc. Method and system for compensating for thermally induced motion of probe cards
TWI242815B (en) * 2001-12-13 2005-11-01 Ushio Electric Inc Method for thermal processing semiconductor wafer
AU2002350358A1 (en) * 2001-12-26 2003-07-30 Vortek Indusries Ltd. Temperature measurement and heat-treating methods and systems
US6998580B2 (en) * 2002-03-28 2006-02-14 Dainippon Screen Mfg. Co., Ltd. Thermal processing apparatus and thermal processing method
US6849831B2 (en) * 2002-03-29 2005-02-01 Mattson Technology, Inc. Pulsed processing semiconductor heating methods using combinations of heating sources
US6987240B2 (en) * 2002-04-18 2006-01-17 Applied Materials, Inc. Thermal flux processing by scanning
US7005601B2 (en) * 2002-04-18 2006-02-28 Applied Materials, Inc. Thermal flux processing by scanning
US6885815B2 (en) * 2002-07-17 2005-04-26 Dainippon Screen Mfg. Co., Ltd. Thermal processing apparatus performing irradiating a substrate with light
KR100549452B1 (en) * 2002-12-05 2006-02-06 다이닛뽕스크린 세이조오 가부시키가이샤 A heat treatment apparatus and method for irradiating a light
JP4675579B2 (en) * 2003-06-30 2011-04-27 大日本スクリーン製造株式会社 Optical energy absorption ratio measuring method, optical energy absorption ratio measuring apparatus and heat treatment apparatus
JP4618705B2 (en) * 2003-09-18 2011-01-26 大日本スクリーン製造株式会社 Heat treatment equipment
US6855916B1 (en) * 2003-12-10 2005-02-15 Axcelis Technologies, Inc. Wafer temperature trajectory control method for high temperature ramp rate applications using dynamic predictive thermal modeling
CN101288035B (en) * 2005-09-14 2013-06-19 马特森技术有限公司 Repeatable heat-treating methods and apparatus

Also Published As

Publication number Publication date
CN101324470B (en) 2011-03-30
KR101067901B1 (en) 2011-09-28
DE10297622B4 (en) 2018-06-14
CN1608199A (en) 2005-04-20
JP2009092676A (en) 2009-04-30
JP2011117979A (en) 2011-06-16
AU2002350358A1 (en) 2003-07-30
KR101067902B1 (en) 2011-09-27
JP5133278B2 (en) 2013-01-30
KR20040066930A (en) 2004-07-27
KR20100039455A (en) 2010-04-15
WO2003060447A1 (en) 2003-07-24
US7616872B2 (en) 2009-11-10
CN101324470A (en) 2008-12-17
DE10297622T5 (en) 2005-01-05
JP5166562B2 (en) 2013-03-21
US7445382B2 (en) 2008-11-04
JP2005515425A (en) 2005-05-26
US20050063453A1 (en) 2005-03-24
CN100416243C (en) 2008-09-03
US20060096677A1 (en) 2006-05-11

Similar Documents

Publication Publication Date Title
WO2003060447A8 (en) Temperature measurement and heat-treating methods and systems
WO2002050875A3 (en) Heating configuration for use in thermal processing chambers
WO2002084712A3 (en) Rapid thermal processing system for integrated circuits
EP0839597B1 (en) Method of cleaving a brittle material using a point heat source for providing a thermal stress
WO2004036630A3 (en) Rapid thermal processing system for integrated circuits
JP2005515425A5 (en)
WO2003009350A3 (en) Flash anneal
TW200515491A (en) Laser thermal annealing of lightly doped silicon substrates
CN104215611B (en) Method for checking polysilicon layer
WO2002067314A3 (en) High temperature short time curing of low dielectric constant materials using rapid thermal processing techniques
EP1681716A4 (en) Jig for heat treating semiconductor substrate and method for heat treating semiconductor substrate
WO2005006400A3 (en) Substrate support having dynamic temperature control
DE602004028910D1 (en) NEN ON A WAVER SURFACE WITH THE HELP OF LOCAL TEMPERATURE CONTROL
WO2001082343A3 (en) Heat management in wafer processing equipment using thermoelectric device
WO2006047062A3 (en) Method and apparatus for low temperature pyrometry useful for thermally processing silicon wafers
KR101590741B1 (en) Method and system for controlling a spike anneal process
ATE447171T1 (en) DEVICE AND METHOD FOR GENERATING ELECTROMAGNETIC FIELD DISTRIBUTIONS
TW200638506A (en) Thermoelectric heating and cooling apparatus for semiconductor processing
KR102527612B1 (en) Systems and methods for heat treatment and temperature measurement of workpieces at low temperatures
AU2003292147A1 (en) Method for determining the temperature of a semiconductor wafer in a rapid thermal processing system
WO2005052988A3 (en) Focused photon energy heating chamber
Borisenko et al. Pulsed heating of semiconductors
TW200607033A (en) Methods and systems for rapid thermal processing
JPS60137027A (en) Optical irradiation heating method
ITBO20020488A1 (en) PROCEDURE FOR DETECTING THE DISTRIBUTION OF OPERATING TEMPERATURES IN A TECHNOLOGICAL PROCESS

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SC SD SE SG SK SL TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LU MC NL PT SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
CFP Corrected version of a pamphlet front page
CR1 Correction of entry in section i

Free format text: IN PCT GAZETTE 30/2003 UNDER (71) REPLACE "VORTEK INDUSRIES LTD." BY "VORTEK INDUSTRIES LTD."

WWE Wipo information: entry into national phase

Ref document number: 20028259602

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 2003560494

Country of ref document: JP

Ref document number: 1020047010182

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 10497447

Country of ref document: US

122 Ep: pct application non-entry in european phase
WWE Wipo information: entry into national phase

Ref document number: 1020107006383

Country of ref document: KR