WO2003041133A2 - Electrothermal self-latching mems switch and method - Google Patents
Electrothermal self-latching mems switch and method Download PDFInfo
- Publication number
- WO2003041133A2 WO2003041133A2 PCT/US2002/036009 US0236009W WO03041133A2 WO 2003041133 A2 WO2003041133 A2 WO 2003041133A2 US 0236009 W US0236009 W US 0236009W WO 03041133 A2 WO03041133 A2 WO 03041133A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- contact
- structural layer
- electrothermal
- movable
- substrate
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0024—Transducers for transforming thermal into mechanical energy or vice versa, e.g. thermal or bimorph actuators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
- B81B3/0051—For defining the movement, i.e. structures that guide or limit the movement of an element
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/0015—Cantilevers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H61/00—Electrothermal relays
- H01H61/04—Electrothermal relays wherein the thermally-sensitive member is only heated directly
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
- H02N1/002—Electrostatic motors
- H02N1/006—Electrostatic motors of the gap-closing type
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N10/00—Electric motors using thermal effects
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/01—Switches
- B81B2201/012—Switches characterised by the shape
- B81B2201/014—Switches characterised by the shape having a cantilever fixed on one side connected to one or more dimples
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/01—Switches
- B81B2201/012—Switches characterised by the shape
- B81B2201/018—Switches not provided for in B81B2201/014 - B81B2201/016
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0118—Cantilevers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/04—Electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/07—Interconnects
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0105—Sacrificial layer
- B81C2201/0107—Sacrificial metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0105—Sacrificial layer
- B81C2201/0108—Sacrificial polymer, ashing of organics
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0105—Sacrificial layer
- B81C2201/0109—Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/02—Contacts characterised by the material thereof
- H01H1/04—Co-operating contacts of different material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/50—Means for increasing contact pressure, preventing vibration of contacts, holding contacts together after engagement, or biasing contacts to the open position
- H01H1/504—Means for increasing contact pressure, preventing vibration of contacts, holding contacts together after engagement, or biasing contacts to the open position by thermal means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0042—Bistable switches, i.e. having two stable positions requiring only actuating energy for switching between them, e.g. with snap membrane or by permanent magnet
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0063—Switches making use of microelectromechanical systems [MEMS] having electrostatic latches, i.e. the activated position is kept by electrostatic forces other than the activation force
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0089—Providing protection of elements to be released by etching of sacrificial element; Avoiding stiction problems, e.g. of movable element to substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
- H01H2059/0072—Electrostatic relays; Electro-adhesion relays making use of micromechanics with stoppers or protrusions for maintaining a gap, reducing the contact area or for preventing stiction between the movable and the fixed electrode in the attracted position
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H61/00—Electrothermal relays
- H01H2061/006—Micromechanical thermal relay
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49204—Contact or terminal manufacturing
- Y10T29/49208—Contact or terminal manufacturing by assembling plural parts
- Y10T29/49222—Contact or terminal manufacturing by assembling plural parts forming array of contacts or terminals
Definitions
- the present invention generally relates to micro-electro-mechanical systems (MEMS) devices and methods. More particularly, the present invention relates to the design and fabrication of movable MEMS microscale structures.
- MEMS micro-electro-mechanical systems
- An electrostatic MEMS switch is a switch operated by an electrostatic charge and manufactured using MEMS techniques.
- a MEMS switch can control electrical, mechanical, or optical signal flow.
- MEMS switches have typical application to telecommunications, such as DSL switch matrices and cell phones, Automated Testing Equipment (ATE), and other systems that require low cost switches or low-cost, high-density arrays.
- ATE Automated Testing Equipment
- MEMS switches and related devices can be fabricated by either bulk or surface micromachining techniques.
- Bulk micromachining generally involves sculpting one or more sides of a substrate to form desired three-dimensional structures and devices in the same substrate material.
- the substrate is composed of a material that is readily available in bulk form, and thus ordinarily is silicon or glass.
- Wet and/or dry etching techniques are employed in association with etch masks and etch stops to form the microstructures. Etching is typically performed on the frontside and backside of the substrate.
- the etching technique can generally be either isotropic or anisotropic in nature.
- Isotropic etching is insensitive to the crystal orientation of the planes of the material being etched (e.g., the etching of silicon by using a nitric acid as the etchant).
- Anisotropic etchants such as potassium hydroxide (KOH), tetramethyl ammonium hydroxide (TMAH), and ethylenediamine pyrochatechol (EDP), selectively attack different crystallographic orientations at different rates, and thus can be used to define relatively accurate sidewalls in the etch pits being created.
- Etch masks and etch stops are used to prevent predetermined regions of the substrate from being etched.
- surface micromachining generally involves forming three-dimensional structures by depositing a number of different thin films on the top of a silicon wafer, but without sculpting the wafer itself.
- the films usually serve as either structural or sacrificial layers.
- Structural layers are frequently composed of polysilicon, silicon nitride, silicon dioxide, silicon carbide, or aluminum.
- Sacrificial layers are frequently composed of polysilicon, photoresist material, polyimide, metals or various kinds of oxides, such as PSG (phosphosilicate glass) and LTO (low-temperature oxide). Successive deposition, etching, and patterning procedures are carried out to arrive at the desired microstructure.
- a silicon substrate is coated with an isolation layer, and a sacrificial layer is deposited on the coated substrate. Windows are opened in the sacrificial layer, and a structural layer is then deposited and etched. The sacrificial layer is then selectively etched to form a free-standing, movable microstructure such as a beam or a cantilever out of the structural layer.
- the microstructure is ordinarily anchored to the silicon substrate, and can be designed to be movable in response to an input from an appropriate actuating mechanism.
- Many current MEMS switch designs employ a cantilievered beam (or plate), or multiply-supported beam geometry for the switching structure.
- these MEMS switches include a movable, bimaterial beam comprising a structural layer of dielectric material and a layer of metal.
- the dielectric material is fixed at one end with respect to the substrate and provides structural support for the beam.
- the layer of metal is attached on the underside of the dielectric material and forms a movable electrode and a movable contact.
- the layer of metal can form part of the anchor.
- the movable beam is actuated in a direction toward the substrate by the application of a voltage difference across the electrode and another electrode attached to the surface of the substrate. The application of the voltage difference to the two electrodes creates an electrostatic field, which pulls the beam towards the substrate.
- the beam and substrate each have a contact which is separated by an air gap when no voltage is applied, wherein the switch is in the "open” position.
- the switch is in the "open” position.
- the static deformation can be caused by a stress mismatch or a stress gradient within the films. At some equilibrium temperature, the mismatch effects could be balanced to achieve a flat bimaterial structure, but this does not fix the temperature dependent effects.
- the mismatch could be balanced through specific processes (i.e., deposition rates, pressures, method, etc.), through material selection, and through geometrical parameters such as thickness.
- This bimaterial structure of metal and dielectric introduces a large variation in function over temperature, because the metal will typically have a higher thermal expansion rate than the dielectric. Because of the different states of static stress in the two materials, the switch can be deformed with a high degree of variability.
- Switch failure can result from deformation of the beam. Switch failure results when electrical contact is not established between the movable and stationary contacts due to static deformation or because of the deformation introduced as a function of temperature. A second mode of failure is observed when the movable contact and the stationary contact are prematurely closed, resulting in a "short". Because of the deformation of the beam, the actuation voltage is increased or decreased depending on whether it is curved away from the substrate or towards the substrate, respectively. Because of this variability, the available voltage may not be adequate to achieve the desired contact force and, thus, contact resistance.
- the beam of a MEMS switch is restored to an "open" position from a “closed” position by reducing the actuation voltage an amount sufficient for the resilient forces of the beam to deflect the beam back to the "open” position.
- the contacts of a MEMS switch frequently adhere to one another due metallurgical adhesion, cold welding, or hot welding forces. These forces are sometimes greater than the resilient forces of the beam, thus preventing the deflection of the beam to the "open” position. In such cases, switch failure results because the beam does not return to the "open” position. Therefore, it is desired to have a MEMS switch having a mechanism for generating a force to return the beam to an "open” position.
- a self-latching microscale switch having a movable microcomponent can include a substrate having a stationary contact.
- the switch can also include a structural layer having a movable contact positioned for contacting the stationary contact when the structural layer moves toward the substrate.
- An electrothermal latch attached to the structural layer and having electrical communication with the movable contact to provide current flow between the electrothermal latch and the stationary contact when the movable contact contacts the stationary contact for maintaining the movable contact in contact with the stationary contact.
- a method for maintaining a microscale switch in a closed position can include providing a stationary contact formed on a substrate, and the method can also include providing a movable microcomponent suspended above the substrate.
- the microcomponent can include a structural layer having a movable contact positioned for contacting the stationary contact when the structural layer is moved towards the substrate.
- An electrothermal latch can be attached to the structural layer and have electrical communication with the movable contact.
- the method can also include moving the structural layer towards the substrate whereby the movable contact moves into contact with the stationary contact.
- the method can include providing current flow between the electrothermal latch and the stationary contact to maintain the movable contact in contact with the stationary contact.
- a method for fabricating a self-latching microscale switch can include depositing a first conductive layer on a substrate and forming a stationary contact by removing a portion of the first conductive layer.
- a sacrificial layer can be deposited on the stationary contact and the first conductive layer.
- a second conductive layer can be deposited on the sacrificial layer.
- a movable contact can be formed by removing a portion of the second conductive layer.
- the method can also include depositing a structural layer on the movable contact and the sacrificial layer.
- a via can be formed through the structural layer to the movable contact.
- the method can include depositing a third conductive layer on the structural layer and in the via.
- a portion of the third conductive layer can be removed to form an electrothermal latch, wherein the electrothermal latch electrically communicates with the movable contact through the via.
- a sufficient amount of the sacrificial layer can be removed so as to define a second gap between the stationary contact and the movable contact.
- a method for maintaining a microscale switch in a closed position can include moving a structural layer having a movable contact towards a substrate having a stationary contact whereby the movable contact moves into contact with the stationary contact.
- the method can also include applying a current through the movable contact, the stationary contact, and an electrothermal latch attached to the structural layer and in electrical communication with the movable contact, whereby the electrothermal latch maintains the movable contact in contact with the stationary contact.
- Figure 1 illustrates a cross-sectional side view of a MEMS switch having electrothermal self-latching in an "open" position
- Figure 2 illustrates a top plan view of an electrothermal self-latching MEMS switch
- Figure 3 illustrates a bottom plan view of a beam of an electrothermal self-latching MEMS switch
- Figure 4 illustrates a cross-sectional side view of an electrothermal self- latching MEMS switch in a "closed" position
- Figure 5 illustrates a cross-sectional front elevation view of the stationary electrode, structural layer, movable electrode, electrode interconnect, and electrothermal latch of an electrothermal self-latching MEMS switch
- Figures 6A-K illustrate fabrication steps of another embodiment of a method for fabricating an electrothermal self-latching MEMS switch.
- a component such as a layer or substrate is referred to as being “disposed on”, “attached to” or “formed on” another component, that component can be directly on the other component or, alternatively, intervening components (for example, one or more buffer or transition layers, interlayers, electrodes or contacts) can also be present.
- disposed on is used interchangeably to describe how a given component can be positioned or situated in relation to another component. Therefore, it will be understood that the terms “disposed on”, “attached to” and “formed on” do not introduce any limitations relating to particular methods of material transport, deposition, or fabrication. Contacts, interconnects, conductive vias, electrothermal components and electrodes of various metals can be formed by sputtering, CVD, or evaporation. If gold, nickel or PERMALLOYTM (Ni x Fe y ) is employed as the metal element, an electroplating process can be carried out to transport the material to a desired surface.
- adhesion material often used include chromium, titanium, or an alloy such as titanium-tungsten (TiW).
- Some metal combinations can require a diffusion barrier to prevent a chromium adhesion layer from diffusing through gold. Examples of diffusion barriers between gold and chromium include platinum or nickel.
- etching processes can be suitably employed to selectively remove material or regions of material.
- An imaged photoresist layer is ordinarily used as a masking template.
- a pattern can be etched directly into the bulk of a substrate, or into a thin film or layer that is then used as a mask for subsequent etching steps.
- etching process employed in a particular fabrication step e.g., wet, dry, isotropic, anisotropic, anisotropic-orientation dependent
- the etch rate, and the type of etchant used will depend on the composition of material to be removed, the composition of any masking or etch-stop layer to be used, and the profile of the etched region to be formed.
- poly- etch HF:HN0 3 :CH 3 COOH
- Hydroxides of alkali metals e.g., KOH
- EDP ethylenediamine mixed with pyrochatechol in water
- Silicon nitride can typically be used as the masking material against etching by KOH, and thus can used in conjunction with the selective etching of silicon. Silicon dioxide is slowly etched by KOH, and thus can be used as a masking layer if the etch time is short.
- KOH will etch undoped silicon
- heavily doped (p++) silicon can be used as an etch- stop against KOH as well as the other alkaline etchants and EDP.
- Silicon oxide and silicon nitride can be used as masks against TMAH and EDP.
- the preferred metal used to form contacts and interconnects in accordance with the invention is gold and its alloys.
- wet etchants can be used to etch materials such as copper, gold, silicon dioxide, and secondary materials such as the adhesion and barrier materials.
- gold can be etched with an aqueous solution of Kl 3 in a temperature range of 20 to 50°C.
- chromium a common adhesive layer
- copper can be etched 25°C in a dilute solution of nitric acid.
- a common method of etching silicon dioxide is with various aqueous solutions of HF or solutions of HF that are buffered with ammonium fluoride.
- electrochemical etching in hydroxide solution can be performed instead of timed wet etching.
- an etch-stop can be created by epitaxially growing an n-type silicon end layer to form a p-n junction diode.
- a voltage can be applied between the n-type layer and an electrode disposed in the solution to reverse-bias the p-n junction.
- the bulk p-type silicon is etched through a mask down to the p-n junction, stopping at the n-type layer.
- photovoltaic and galvanic etch-stop techniques are also suitable.
- Dry etching techniques such as plasma-phase etching and reactive ion etching (RIE) can also be used to remove silicon and its oxides and nitrides, as well as various metals.
- DRIE Deep reactive ion etching
- Silicon dioxide is typically used as an etch-stop against DRIE, and thus structures containing a buried silicon dioxide layer, such as silicon-on-insulator (SOI) wafers, can be used according to the methods of the invention as starting substrates for the fabrication of microstructures.
- silicon dioxide can be etched in chemistries involving CF 4 + 0 2 , CHF 3 , C 2 F 6 , or C 3 F 8 .
- gold can be dry etched with C 2 CI 2 F 4 or C 4 CI 2 F 4 + 0 2 .
- An alternative patterning process to etching is the lift-off process as known to those of skill in the art.
- the conventional photolithography techniques are used for the negative image of the desired pattern.
- This process is typically used to pattern metals, which are deposited as a continuous film or films when adhesion layers and diffusion barriers are needed. The metal is deposited on the regions where it is to be patterned and on top of the photoresist mask (negative image). The photoresist and metal on top are removed to leave behind the desired pattern of metal.
- the term “device” is interpreted to have a meaning interchangeable with the term “component.”
- the term “conductive” is generally taken to encompass both conducting and semiconducting materials. Examples will now be described with reference to the accompanying drawings.
- MEMS switch 100 having electrothermal self-latching are illustrated.
- FIG. 1 a cross-sectional side view of MEMS switch, generally designated 100, is illustrated in an "open" position.
- MEMS switch 100 includes a substrate 102.
- Non-limiting examples of materials which substrate 102 can comprise include silicon (in single-crystal, polycrystalline, or amorphous forms), silicon oxinitride, glass, quartz, sapphire, zinc oxide, alumina, silica, or one of the various Group III - V compounds in either binary, ternary or quaternary forms (e.g., GaAs, InP, GaN, AIN, AIGaN, InGaAs, and so on). If the composition of substrate 102 is chosen to be a conductive or semi-conductive material, a non-conductive, dielectric layer can be deposited on the top surface of substrate 102, or at least on portions of the top surface where electrical contacts or conductive regions are desired.
- Substrate 102 includes a stationary contact 104 and a stationary electrode 106 formed on a surface thereof.
- Stationary contact 104 and stationary electrode 106 can comprise a conductive material such as a metal.
- stationary contact 104 and stationary electrode 106 can comprise different conductive materials such as gold-nickel alloy (AuNi 5 ) and aluminum or other suitable conductive materials known to those of skill in the art.
- the conductivity of stationary electrode 106 can be much lower than the conductivity of stationary contact 104.
- stationary contact 104 can comprise a very high conductive material such as copper.
- stationary contact 104 has a width range of 5 to 25 microns.
- Stationary electrode 106 can have a wide range of dimensions depending on the required actuation voltages, contact resistance, and other functional parameters.
- MEMS switch 100 further comprises a movable, trilayered beam generally designated 108, suspended over stationary contact 104 and stationary electrode 106.
- Beam 108 is fixedly attached at one end to a mount 110, which can be fixedly attached to substrate 102.
- Beam 108 extends substantially parallel to the top surface of substrate 102 when MEMS switch 100 is in an "open" position.
- Beam 108 generally comprises a dielectric structural layer 112 sandwiched between two electrically conductive layers described in more detail below.
- Structural layer 112 can comprise a bendable, resilient material, preferably silicon oxide (Si0 2 , as it is sputtered, electroplated, spun-on, or otherwise deposited), to deflect towards substrate 102 for operating in a "closed" position.
- Structural layer 112 provides electrical isolation and desirable mechanical properties including resiliency properties.
- structural layer 112 can comprise silicon nitride (Si ⁇ N ⁇ ), silicon oxynitride, alumina or aluminum oxide (Al x O y ), polymers, CVD diamond, their alloys, or any other suitable bendable, resilient materials known to those of skill in the art.
- beam 108 further includes a top layer and a bottom layer attached to a top side 114 and an underside 116, respectively, of structural layer 112.
- the bottom layer comprises a movable electrode 118 and a movable contact 120.
- the top layer comprises an electrode interconnect 124, an electrothermal latch 126, and a contact interconnect 128.
- Electrode interconnect 124 is shown with broken lines in this view due to its position behind electrothermal latch 126. As shown, movable contact 120 and contact interconnect 128 are positioned further from mount 110 than electrode interconnect 124 and contact interconnect 128. Electrothermal latch 126 extends substantially the length of beam 108 for connection to contact interconnect 128.
- MEMS switch 100 further includes a voltage source 130 for applying a voltage difference across electrodes 106 and 118 for electrostatic actuation of beam 108.
- Voltage source 130 can be directly connected to stationary electrode 106 and indirectly connected to movable electrode 118 through electrode interconnect 124 and a first interconnect via 132.
- First interconnect via 132 extends through structural layer 112 for providing an electrical connection between movable electrode 118 and electrode interconnect 124. Therefore, upon application of a voltage difference by voltage source 130, electrostatic coupling is established between electrodes 106 and 118 across an air gap, referenced hereinbelow.
- the electrostatic field creates an attractive force between electrodes 106 and 118 for pulling beam 108 towards substrate 102.
- the gap between electrodes 118 and 106 can be any suitable isolating fluid as known to those of skill in the art, such as SF 6 , which has a high breakdown voltage and provides a quenching effect during an arcing event.
- movable electrode 118 and electrode interconnect 124 are fabricated of the same material and dimensioned the same.
- movable contact 122 and contact interconnect 128 can be fabricated of the same material and dimensioned the same.
- the elastic symmetry is preserved by using the same material and by using the same dimensions.
- the symmetric stress field is produced by depositing the same materials using the same process and thicknesses.
- the symmetric thermal expansion properties minimize any variation in the switch operation with respect to temperature because the same material is on either side of structural layer 112.
- any functional variation exhibited by MEMS switch 100 depends primarily on the process variation, which can be minimized by the appropriate optimization of the design in the process.
- the current carrying capacity of contacts 122 and 128 is aided.
- beam 108 has the same type of metal, deposited by the same process, patterned in the same geometry, and deposited to the same thickness, but the use of different materials could be accommodated with the appropriate design and characterization.
- contacts 104 and 120 could be different materials or different alloys of the same materials. The material selection minimizes contact resistance and failures such as stiction.
- Electrodes 106 and 118, contacts 104 and 120, electrothermal latch 126, and interconnects 124 and 128 can comprise similar materials, such as gold, whereby the manufacturing process is simplified by the minimization of the number of different materials required for fabrication. Additionally, electrodes 106 and 118, contacts 104 and 120, electrothermal latch 126, and interconnects 124 and 128 can comprise conductors (platinum, aluminum, palladium, copper, tungsten, nickel, and other materials known to those of skill in the art), conductive oxides (indium tin oxide), and low resistivity semiconductors (silicon, polysilicon, and other materials known to those of skill in the art).
- conductors platinum, aluminum, palladium, copper, tungsten, nickel, and other materials known to those of skill in the art
- conductive oxides indium tin oxide
- low resistivity semiconductors silicon, polysilicon, and other materials known to those of skill in the art.
- These components can include adhesion layers (Cr, Ti, TiW, etc.) disposed between the component and structural material 112.
- These components can comprise a conductive material and an adhesion layer that includes diffusion barriers for preventing diffusion of the adhesion layer through the electrode material, the conductor material through the adhesion layer or into the structural material.
- These components can also comprise different materials for breakdown or arcing considerations, for "stiction" considerations during wet chemical processing, or because of fabrications process compatibility issues.
- Contacts 104 and 120 can comprise a material having good conductive properties and other desirable properties of suitable contacts known to those of skill in the art, such as low hardness and low wear.
- contacts 104 and 120 comprise a material having low resistivity, low hardness, low oxidation, low wear, and other desirable properties of suitable contacts known to those of skill in the art.
- electrothermal latch 126 comprises a material having high resistivity, high softening/melting point, and high current capacity. The preferred properties contribute to high localized heating for development of larger deflections and forces. The high softening/melting point and high current capacity increase the reliability of the device during electrothermal operation.
- electrode interconnect 124, electrothermal latch 126, and contact interconnect 128 comprise the same material.
- electrode interconnect 124, electrothermal latch 126, and contact interconnect 128 can comprise different materials.
- MEMS switch 100 provides a switching function that establishes an electrical connection between stationary contact 104 and a fixed contact (not shown) located at mount 110 when beam 108 is moved to a "closed” position. Conversely, when beam 108 is not in a "closed” position, there is no electrical connection between stationary contact 104 and the fixed contact. Movable contact 120 can be suspended over stationary contact 104 in a position such that it will contact stationary contact 104 when beam 108 is deflected to the "closed” position. Movable contact 120 and contact interconnect 128 are electrically connected through structural layer 112 by a second interconnect via 134 (shown with broken lines due to its position within structural layer 112).
- contact interconnect 128 is connected to electrothermal latch 126, which is connected to the fixed contact.
- the fixed contact is provided electrical communication with stationary contact 104 through electrothermal latch 126, contact interconnect 128, second interconnect via 134, and movable contact 120.
- contacts 104 and 120 are separated by an air gap such that there is no electrical communication between stationary contact 104 and the fixed contact.
- Movable contact 120 is dimensioned smaller than stationary contact 104 to facilitate contact when process and alignment variability are taken into consideration.
- Stationary contact 104 needs to be sized appropriately so that movable contact 120 always makes contact with stationary contact 104 when beam 108 is moved to the "closed" position.
- a second consideration that determines the size of movable contact 120 and stationary contact 104 is the parasitic response of switch 100.
- the parasitic actuation response is generated by electric fields produced by potential differences between contacts 104 and 120 that produce electric fields and a force on structural layer 112 which moves movable contact 120.
- the dimensions of contacts 104 and 120 are related to the dimensions of contact 104 and 120 for achieving a specific ratio of the parasitic actuation to the actuation voltage.
- Movable contact 120 and contact interconnect 128 are attached to opposing sides of structural layer 112.
- Contact interconnect 128 is dimensioned substantially the same as movable contact 120.
- Contact interconnect 128 and movable contact 120 are aligned with respect to each other and have substantially the same dimensions.
- contact interconnect 128 can have different dimensions and extent than movable contact 120.
- Contact interconnect 128 and movable contact 120 are intended to share a geometrical and thermo-mechanical equivalence. This equivalence provides a beam, which can achieve a manufacturable flatness that is maintained over temperature and other environmental conditions, such as die attachment, package lid seal processes, or solder reflow process.
- contact interconnect 128 comprises a conductive material, such as gold (Au), having the same coefficient of thermal expansion, elastic modulus, residual film stress, and other desirable electrical/mechanical properties known to those of skill in the art as movable contact 120.
- Movable electrode 118 and electrode interconnect 124 are attached to opposing sides of structural layer 112.
- electrode interconnect 124 has substantially the same dimensions as movable electrode 118 and is aligned with movable electrode 118 on the opposing side in order to achieve a manufacturable flatness that is maintained over temperature.
- electrode interconnect 124 can have different dimensions and extent than movable electrode 118.
- electrode interconnect 124 comprises a conductive material having the same coefficient of thermal expansion, elastic modulus, residual film stress, and other electrical/mechanical properties as movable electrode 118.
- electrode interconnect 124 can have different dimensions and extent than movable electrode 118.
- Electrode interconnect 124 and movable electrode 118 are intended to share a geometrical and thermo-mechanical equivalence. This equivalence provides a be.am that can achieve manufacturable flatness that is maintained over temperature and other environmental conditions, such as die attachment, package lid seal processes, or solder reflow process. As stated above, electrode interconnect 124 and movable electrode 118 are electrically connected through structural layer 112 by first interconnect via 132 (shown with broken lines due to its position within structural layer 112). First interconnect via 132 comprises a conductive material formed through structural layer 112 for electrically connecting movable electrode 118 and electrode interconnect 124.
- first interconnect via 132 comprises the same conductive material as movable electrode 118 and electrode interconnect 124.
- first interconnect via 132 can comprise any suitable conductive material known to those of skill in the art, with properties such as high conductivity, high current capacity, low tendency for electromigration.
- MEMS switch 100 includes an electrothermal self-latching function for maintaining beam 108 in the "closed" position without application of a voltage difference across electrodes 106 and 118.
- the electrothermal self-latching function operates when contacts 104 and 120 touch and current flows through movable contact 120, first interconnect via 130, contact interconnect 128, and electrothermal latch 126.
- Electrothermal latch 126 includes resistance path transitions (shown in FIG. 2) for providing an abrupt change in the density of current flow through electrothermal latch 126.
- the resistance path transition can be realized by a change in thickness rather than a change in width.
- electrothermal latch 126 can comprise material transitions rather than area transitions to accomplish the resistance path transitions.
- the material transitions are realized by patterning different materials on either side of the resistance path transition. For example, nickel (Ni) and gold (Au) can be patterned on a first and second side of the resistance path transition. Two different suitable materials having differing thermal and mechanical properties as known to those of skill in the art can be used to form the resistance path transition.
- the magnitude of the localized heating is determined by the difference in the geometric or material properties.
- the magnitude of the current density introduces a local temperature gradient on top of the structural layer 112 for elongating the top portion of structural layer 112, thereby increasing the deflection force of beam 108 for pressing together contacts 104 and 120.
- Beam 108 is "unlatched” when current flow through electrothermal latch 126 is reduced sufficiently such that the resilient force of structural layer 112 overcomes the electrothermal force for restoring beam to the "open” position. Once the contact between contacts 104 and 120 is broken such that beam 108 is not in the "closed” position, beam 108 will deflect to the "open” position.
- the self-latching function of MEMS switch 100 is advantageous because it provides a force sufficient to maintain beam 108 in the "closed” position without application of a voltage difference by voltage source 130. Power requirements are reduced because the application of voltage is not required. Additionally, the self-latching function is advantageous because it can reduce the likelihood of welding between contacts 104 and 120.
- electrothermal latch 126 includes two ends 200 and 202 positioned at mount 110 for connection to the fixed contact (not shown) located at mount 110.
- electrothermal latch 126 extends from ends 200 and 202 along two conductive paths for connection to contact interconnect 128.
- electrothermal latch 126 can be directly connected to second interconnect via 134.
- Electrothermal latch 126 further includes resistance path transitions 204 and 206 positioned near ends 200 and 202, respectively, where the current paths change from a low resistance path to a high resistance path for providing local heating and local generation of force to facilitate actuation of beam 108.
- the position of resistance path transitions 204 and 206 and the ratio of the transition can be optimized for maximal force without damaging the component due to electrical overstress. Resistive heating along the length of electrothermal latch 126 will also provide the elongation that aids the actuation of beam 108.
- Electrode interconnect 124 and contact interconnect 128 can be generally rectangular in shape.
- the external corners of electrode interconnect 124 and contact interconnect 128 can be rounded to contain internal reentrant corners for reducing the intensification in the electric fields produced by the potential differences between conductors.
- electrode interconnect 124 is dimensioned the same as movable electrode 118.
- electrode interconnect 124 can be any suitable non-rectangular shape that substantially matches the shape of movable electrode 118.
- the shape of contact interconnect 128 substantially matches the shape of movable contact 120.
- Interconnect vias 130 and 132 are rectangular and shown by broken lines due to their position behind contact interconnect 128 and electrode interconnect 124, respectively.
- interconnect vias 130 and 132 can be any geometry suitable for vias including circular, elliptical, or rectangular with rounded corners.
- FIG. 3 a bottom view of beam 108 of MEMS switch 100 is illustrated. As shown, movable contact 120 and movable electrode 130 are substantially rectangular.
- MEMS switch 100 is close enough to stationary electrode 106 for "pull-in” voltage, or “snap-in” voltage, to occur. After “pull-in” voltage occurs, beam 108 is pulled in an unstable manner towards substrate 102 until movable contact 120 touches stationary contact 104, thus establishing an electrical connection.
- FIG. 4 a cross-sectional side view of MEMS switch 100 is illustrated in a "closed” position wherein an electrical connection has been established. As shown in the "closed” position, movable contact 120 is touching stationary contact 104.
- the components of MEMS switch 100 are dimensioned such that movable electrode 118 does not contact stationary electrode 106 in the "closed” position, thus preventing a short between components 106 and 118.
- MEMS switch 100 can be maintained in a "closed” position by the electrothermal actuation of electrothermal latch 126. The application of a voltage difference across electrodes 106 and 118 is not required to maintain beam 108 in the "closed” position.
- movable contact 120 In the "open" position, movable contact 120 is separated from stationary contact 104 by a gap distance a 138 as shown in FIG. 1. Movable electrode 118 is separated from stationary electrode 106 by a gap distance b 140. In this embodiment, distance a 138 is less than distance b 140. If distance a 138 is less than distance b 140, the operation of MEMS switch 100 is more reliable because potential for shorting between stationary electrode 106 and movable electrode 118 is reduced.
- the length of beam 108 is indicated by a distance c 142.
- the center of movable contact 120 is a distance d 144 from mount 110 and a distance e 146 from the end of beam 108 that is distal mount 110.
- the edge of electrode interconnect 124 distal mount 110 is a distance f 148 from mount 110.
- the edge of electrode interconnect 124 near mount 110 is a distance g 150 from mount 110.
- distance a 138 is nominally 1.5 microns; distance b 140 is preferably 2 microns; distance c 142 is preferably 155 microns; distance d 144 is preferably 135 microns; distance e 146 is preferably 20 microns; distance f 148 is preferably 105 microns; and distance g 150 is 10 microns.
- the distances a 138, b 140, c 142, d 144, e 146, f 148, and g 150 provide desirable functional performance, but other dimensions can be selected to optimize other functional characteristics, manufacturability, and reliability.
- FIG. 5 a cross-sectional front view of stationary electrode 106, structural layer 112, movable electrode 118, electrothermal latch 126, and electrode interconnect 124 of MEMS switch 100 is illustrated.
- the width of electrode interconnect 124 is indicated by a distance a 500.
- the width of stationary electrode 106 is indicated by distance b 502.
- the width of structural layer 112 is indicated by distance c 504.
- the thickness of structural layer 112 is indicated by distance d 506.
- the thickness of stationary electrode 106 is indicated by distance e 508.
- the thickness of movable electrode 118 is indicated by distance f 510.
- the thickness of electrode interconnect 124 and electrothermal latch 126 is indicated by distance g 512.
- the width of the pathways of electrothermal latch 126 are indicated by distance h 514 and i 516.
- the width of movable electrode 118 is indicated by distance j 518.
- Stationary electrode 106 can be dimensioned greater than movable electrode 118 in order to facilitate shielding MEMS switch 100 from any parasitic voltages.
- distance a 500 is preferably 75 microns; distance b 502 is preferably 102 microns; distance c 504 is preferably 105 microns; distance d 506 is preferably 2 microns; distance e 508 is preferably 0.5 microns; distance f 510 is preferably 0.5 microns; distance g 512 is preferably 0.5 microns; distances h 514 and i 516 are preferably 5 microns; and distance j 518 is preferably 95 microns.
- the distances a 500, b 502, c 504, d 506, e 508, f 510, g 512, h 514, i 516, and j 518 provide desirable functional performance, but other dimensions can be selected to optimize other functional characteristics, manufacturability, and reliability.
- FIGs. 6A-6K an example of one embodiment of a method for fabricating a MEMS switch having electrothermal self-latching according to a surface micromachining process of the present invention will now be described.
- a substrate 600 is provided, which preferably comprises silicon. Because substrate 600 is a semi-conductive material, a first dielectric layer 602 is deposited on the top surface of substrate 600.
- dielectric material can be deposited on portions of the top surface where electrical contacts or conductive regions are desired.
- a process for producing a stationary contact 604 and a stationary electrode 606 is illustrated.
- a first conductive layer 608 is deposited on first dielectric layer 602.
- First conductive layer 608 is patterned as described above.
- stationary contact 604 and stationary electrode 606 are formed simultaneously in first conductive layer 608.
- first stationary contact 604 and stationary electrode 606 can be formed in separate processes.
- a sacrificial layer 610 is deposited to a uniform thickness such that its top surface is preferably planarized. Sacrificial layer 610 defines the gap between a beam structure, described in further detail below, and stationary contact 604 and stationary electrode 606.
- Sacrificial layer 610 can be a metal, dielectric or any other suitable material known to those of skill in the art such that the removal chemistry is compatible with the other electrical and structural materials.
- FIGs. 6E-6F a process for producing a movable contact 612 and a movable electrode 614, as described above, is illustrated.
- grooves 618 and 620 are etched in sacrificial layer 610 for forming movable contact 612 and movable electrode 614, respectively.
- Groove 622 is formed in sacrificial layer 610 for forming a structure to attach the beam to substrate 600 and suspend the beam above first stationary contact 604 and stationary electrode 606.
- a conductive layer is deposited on sacrificial layer 610 until grooves 618 and 620 are filled.
- the conductive layer is patterned as described above to form movable contact 612 and movable electrode 614.
- a structural layer 624 is deposited on movable contact 612, movable electrode 614, sacrificial layer 610, and first dielectric layer 602.
- Structural layer 624 comprises oxide in this embodiment.
- a process for simultaneously producing the following conductive microstructures a contact interconnect 626, an electrode interconnect 628, an electrothermal latch 630, and interconnect vias 632 and 634.
- recesses 636 and 648 are etched into structural layer 624 for forming interconnect vias 632 and 634, respectively.
- Recesses 636 and 638 are etched through structural layer 624 to movable contact 612 and movable electrode 614, respectively.
- a second conductive layer 640 is deposited on structural layer 624 and into recesses 636 and 638 as shown for forming an electrical connection from movable contact 612 and movable electrode 614 to the top surface of structural layer 624.
- second conductive layer 640 is patterned for forming contact interconnect 626, electrode interconnect 628, and electrothermal latch 630 as shown in FIG. 6J.
- Interconnect vias 632 and 634 can be formed by another conductive layer that would precede the deposition of second conductive layer 640, described above.
- sacrificial layer 610 is removed to form a trilayered beam, generally designated 642. Sacrificial layer
- 610 can be removed by any suitable method known to those of skill in the art.
Abstract
Description
Claims
Applications Claiming Priority (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US33807201P | 2001-11-09 | 2001-11-09 | |
US33752801P | 2001-11-09 | 2001-11-09 | |
US33805501P | 2001-11-09 | 2001-11-09 | |
US33806901P | 2001-11-09 | 2001-11-09 | |
US33752901P | 2001-11-09 | 2001-11-09 | |
US33752701P | 2001-11-09 | 2001-11-09 | |
US60/338,055 | 2001-11-09 | ||
US60/338,072 | 2001-11-09 | ||
US60/337,529 | 2001-11-09 | ||
US60/338,069 | 2001-11-09 | ||
US60/337,527 | 2001-11-09 | ||
US60/337,528 | 2001-11-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003041133A2 true WO2003041133A2 (en) | 2003-05-15 |
WO2003041133A3 WO2003041133A3 (en) | 2003-09-12 |
Family
ID=27559772
Family Applications (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2002/035923 WO2003043042A1 (en) | 2001-11-09 | 2002-11-08 | Mems device having electrothermal actuation and release and method for fabricating |
PCT/US2002/035927 WO2003043038A2 (en) | 2001-11-09 | 2002-11-08 | Mems device having contact and standoff bumps and related methods |
PCT/US2002/035925 WO2003043044A1 (en) | 2001-11-09 | 2002-11-08 | Mems device having a trilayered beam and related methods |
PCT/US2002/036009 WO2003041133A2 (en) | 2001-11-09 | 2002-11-08 | Electrothermal self-latching mems switch and method |
PCT/US2002/035926 WO2003042721A2 (en) | 2001-11-09 | 2002-11-08 | Trilayered beam mems device and related methods |
PCT/US2002/035988 WO2003040338A2 (en) | 2001-11-09 | 2002-11-08 | Micro-scale interconnect device with internal heat spreader and method for fabricating same |
Family Applications Before (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2002/035923 WO2003043042A1 (en) | 2001-11-09 | 2002-11-08 | Mems device having electrothermal actuation and release and method for fabricating |
PCT/US2002/035927 WO2003043038A2 (en) | 2001-11-09 | 2002-11-08 | Mems device having contact and standoff bumps and related methods |
PCT/US2002/035925 WO2003043044A1 (en) | 2001-11-09 | 2002-11-08 | Mems device having a trilayered beam and related methods |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2002/035926 WO2003042721A2 (en) | 2001-11-09 | 2002-11-08 | Trilayered beam mems device and related methods |
PCT/US2002/035988 WO2003040338A2 (en) | 2001-11-09 | 2002-11-08 | Micro-scale interconnect device with internal heat spreader and method for fabricating same |
Country Status (7)
Country | Link |
---|---|
US (9) | US6876047B2 (en) |
EP (9) | EP1461816B1 (en) |
CN (3) | CN100550429C (en) |
AT (8) | ATE412611T1 (en) |
AU (3) | AU2002363529A1 (en) |
DE (7) | DE60217924T2 (en) |
WO (6) | WO2003043042A1 (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007007206A3 (en) * | 2005-03-18 | 2007-06-14 | Simpler Networks Inc | Mems actuators and switches |
WO2008008162A2 (en) * | 2006-06-28 | 2008-01-17 | Qualcomm Mems Technologies, Inc. | Support structure for free-standing mems device and methods for forming the same |
US7684106B2 (en) | 2006-11-02 | 2010-03-23 | Qualcomm Mems Technologies, Inc. | Compatible MEMS switch architecture |
WO2013106783A1 (en) * | 2012-01-13 | 2013-07-18 | Qualcomm Mems Technologies, Inc. | Electrostatically transduced sensors composed of photochemically etched glass |
US8963159B2 (en) | 2011-04-04 | 2015-02-24 | Qualcomm Mems Technologies, Inc. | Pixel via and methods of forming the same |
EP2833388A3 (en) * | 2013-07-31 | 2015-03-11 | Analog Devices Technology | A MEMS Switch Device and Method of Fabrication |
US9134527B2 (en) | 2011-04-04 | 2015-09-15 | Qualcomm Mems Technologies, Inc. | Pixel via and methods of forming the same |
US9162868B2 (en) | 2013-11-27 | 2015-10-20 | Infineon Technologies Ag | MEMS device |
Families Citing this family (305)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6853067B1 (en) | 1999-10-12 | 2005-02-08 | Microassembly Technologies, Inc. | Microelectromechanical systems using thermocompression bonding |
US20020096421A1 (en) * | 2000-11-29 | 2002-07-25 | Cohn Michael B. | MEMS device with integral packaging |
JP3651671B2 (en) * | 2001-08-30 | 2005-05-25 | 株式会社東芝 | Micromechanical switch and manufacturing method thereof |
US7132736B2 (en) * | 2001-10-31 | 2006-11-07 | Georgia Tech Research Corporation | Devices having compliant wafer-level packages with pillars and methods of fabrication |
AU2002363529A1 (en) * | 2001-11-09 | 2003-05-19 | Coventor, Incorporated | Micro-scale interconnect device with internal heat spreader and method for fabricating same |
US7521366B2 (en) * | 2001-12-12 | 2009-04-21 | Lg Display Co., Ltd. | Manufacturing method of electro line for liquid crystal display device |
US7045459B2 (en) * | 2002-02-19 | 2006-05-16 | Northrop Grumman Corporation | Thin film encapsulation of MEMS devices |
US7763947B2 (en) * | 2002-04-23 | 2010-07-27 | Sharp Laboratories Of America, Inc. | Piezo-diode cantilever MEMS |
US7135777B2 (en) * | 2002-05-03 | 2006-11-14 | Georgia Tech Research Corporation | Devices having compliant wafer-level input/output interconnections and packages using pillars and methods of fabrication thereof |
US7002225B2 (en) * | 2002-05-24 | 2006-02-21 | Northrup Grumman Corporation | Compliant component for supporting electrical interface component |
US6777258B1 (en) * | 2002-06-28 | 2004-08-17 | Silicon Light Machines, Inc. | Conductive etch stop for etching a sacrificial layer |
US7064637B2 (en) * | 2002-07-18 | 2006-06-20 | Wispry, Inc. | Recessed electrode for electrostatically actuated structures |
US7551048B2 (en) * | 2002-08-08 | 2009-06-23 | Fujitsu Component Limited | Micro-relay and method of fabricating the same |
EP1394554B1 (en) * | 2002-08-30 | 2011-11-02 | STMicroelectronics Srl | Process for the fabrication of a threshold acceleration sensor |
US20040121505A1 (en) * | 2002-09-30 | 2004-06-24 | Magfusion, Inc. | Method for fabricating a gold contact on a microswitch |
US7053736B2 (en) * | 2002-09-30 | 2006-05-30 | Teravicta Technologies, Inc. | Microelectromechanical device having an active opening switch |
US7317232B2 (en) * | 2002-10-22 | 2008-01-08 | Cabot Microelectronics Corporation | MEM switching device |
US6835589B2 (en) * | 2002-11-14 | 2004-12-28 | International Business Machines Corporation | Three-dimensional integrated CMOS-MEMS device and process for making the same |
US6800503B2 (en) * | 2002-11-20 | 2004-10-05 | International Business Machines Corporation | MEMS encapsulated structure and method of making same |
US7498911B2 (en) * | 2003-02-26 | 2009-03-03 | Memtronics Corporation | Membrane switch components and designs |
TWI238513B (en) | 2003-03-04 | 2005-08-21 | Rohm & Haas Elect Mat | Coaxial waveguide microstructures and methods of formation thereof |
US6720267B1 (en) * | 2003-03-19 | 2004-04-13 | United Microelectronics Corp. | Method for forming a cantilever beam model micro-electromechanical system |
NL1023275C2 (en) * | 2003-04-25 | 2004-10-27 | Cavendish Kinetics Ltd | Method for manufacturing a micro-mechanical element. |
CA2429909A1 (en) * | 2003-05-27 | 2004-11-27 | Cognos Incorporated | Transformation of tabular and cross-tabulated queries based upon e/r schema into multi-dimensional expression queries |
DE10325564B4 (en) * | 2003-06-05 | 2008-12-18 | Infineon Technologies Ag | Smart card module |
US7061022B1 (en) * | 2003-08-26 | 2006-06-13 | United States Of America As Represented By The Secretary Of The Army | Lateral heat spreading layers for epi-side up ridge waveguide semiconductor lasers |
US7520790B2 (en) | 2003-09-19 | 2009-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of display device |
JP4823478B2 (en) * | 2003-09-19 | 2011-11-24 | 株式会社半導体エネルギー研究所 | Method for manufacturing light emitting device |
US7388459B2 (en) * | 2003-10-28 | 2008-06-17 | Medtronic, Inc. | MEMs switching circuit and method for an implantable medical device |
US7283024B2 (en) * | 2003-12-18 | 2007-10-16 | Intel Corporation | MEMS switch stopper bumps with adjustable height |
GB0330010D0 (en) | 2003-12-24 | 2004-01-28 | Cavendish Kinetics Ltd | Method for containing a device and a corresponding device |
US7142087B2 (en) * | 2004-01-27 | 2006-11-28 | Lucent Technologies Inc. | Micromechanical latching switch |
US7352266B2 (en) * | 2004-02-20 | 2008-04-01 | Wireless Mems, Inc. | Head electrode region for a reliable metal-to-metal contact micro-relay MEMS switch |
US7265299B2 (en) * | 2004-03-04 | 2007-09-04 | Au Optronics Corporation | Method for reducing voltage drop across metal lines of electroluminescence display devices |
US20050244099A1 (en) * | 2004-03-24 | 2005-11-03 | Pasch Nicholas F | Cantilevered micro-electromechanical switch array |
US7362199B2 (en) * | 2004-03-31 | 2008-04-22 | Intel Corporation | Collapsible contact switch |
FR2868591B1 (en) * | 2004-04-06 | 2006-06-09 | Commissariat Energie Atomique | MICROCOMMUTER WITH LOW ACTUATION VOLTAGE AND LOW CONSUMPTION |
US7476327B2 (en) * | 2004-05-04 | 2009-01-13 | Idc, Llc | Method of manufacture for microelectromechanical devices |
DE102004026654B4 (en) * | 2004-06-01 | 2009-07-09 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Micromechanical RF switching element and method of manufacture |
US7749792B2 (en) * | 2004-06-02 | 2010-07-06 | Carnegie Mellon University | Self-assembling MEMS devices having thermal actuation |
US20060055499A1 (en) * | 2004-09-16 | 2006-03-16 | Bolle Cristian A | Fuse arrangement |
US7527995B2 (en) | 2004-09-27 | 2009-05-05 | Qualcomm Mems Technologies, Inc. | Method of making prestructure for MEMS systems |
US7304784B2 (en) * | 2004-09-27 | 2007-12-04 | Idc, Llc | Reflective display device having viewable display on both sides |
US20060065622A1 (en) * | 2004-09-27 | 2006-03-30 | Floyd Philip D | Method and system for xenon fluoride etching with enhanced efficiency |
US7420725B2 (en) | 2004-09-27 | 2008-09-02 | Idc, Llc | Device having a conductive light absorbing mask and method for fabricating same |
US7417783B2 (en) * | 2004-09-27 | 2008-08-26 | Idc, Llc | Mirror and mirror layer for optical modulator and method |
US7630119B2 (en) | 2004-09-27 | 2009-12-08 | Qualcomm Mems Technologies, Inc. | Apparatus and method for reducing slippage between structures in an interferometric modulator |
US7289259B2 (en) | 2004-09-27 | 2007-10-30 | Idc, Llc | Conductive bus structure for interferometric modulator array |
US7564612B2 (en) | 2004-09-27 | 2009-07-21 | Idc, Llc | Photonic MEMS and structures |
US7583429B2 (en) | 2004-09-27 | 2009-09-01 | Idc, Llc | Ornamental display device |
US7369296B2 (en) | 2004-09-27 | 2008-05-06 | Idc, Llc | Device and method for modifying actuation voltage thresholds of a deformable membrane in an interferometric modulator |
US7372613B2 (en) * | 2004-09-27 | 2008-05-13 | Idc, Llc | Method and device for multistate interferometric light modulation |
US8008736B2 (en) | 2004-09-27 | 2011-08-30 | Qualcomm Mems Technologies, Inc. | Analog interferometric modulator device |
US7944599B2 (en) * | 2004-09-27 | 2011-05-17 | Qualcomm Mems Technologies, Inc. | Electromechanical device with optical function separated from mechanical and electrical function |
US7936497B2 (en) | 2004-09-27 | 2011-05-03 | Qualcomm Mems Technologies, Inc. | MEMS device having deformable membrane characterized by mechanical persistence |
US7193492B2 (en) * | 2004-09-29 | 2007-03-20 | Lucent Technologies Inc. | Monolithic MEMS device having a balanced cantilever plate |
US7239064B1 (en) * | 2004-10-15 | 2007-07-03 | Morgan Research Corporation | Resettable latching MEMS temperature sensor apparatus and method |
KR100619110B1 (en) * | 2004-10-21 | 2006-09-04 | 한국전자통신연구원 | Micro-electro mechanical systems switch and a method of fabricating the same |
US7230513B2 (en) * | 2004-11-20 | 2007-06-12 | Wireless Mems, Inc. | Planarized structure for a reliable metal-to-metal contact micro-relay MEMS switch |
TWI252838B (en) * | 2004-12-02 | 2006-04-11 | Delta Electronics Inc | Micro-switch |
CN101375197B (en) * | 2004-12-09 | 2012-05-16 | 维斯普瑞公司 | Micro-electro-mechanical system (MEMS) capacitors, inductors, and related systems and methods |
US7391090B2 (en) * | 2004-12-17 | 2008-06-24 | Hewlett-Packard Development Company, L.P. | Systems and methods for electrically coupling wires and conductors |
US7521784B2 (en) * | 2004-12-17 | 2009-04-21 | Hewlett-Packard Development Company, L.P. | System for coupling wire to semiconductor region |
KR100661176B1 (en) * | 2004-12-17 | 2006-12-26 | 삼성전자주식회사 | Micro Mechanical Electro System Switch and the Method of it |
US7597819B1 (en) * | 2004-12-20 | 2009-10-06 | Sandia Corporation | Redox buffered hydrofluoric acid etchant for the reduction of galvanic attack during release etching of MEMS devices having noble material films |
TWI287634B (en) * | 2004-12-31 | 2007-10-01 | Wen-Chang Dung | Micro-electromechanical probe circuit film, method for making the same and applications thereof |
US7235750B1 (en) | 2005-01-31 | 2007-06-26 | United States Of America As Represented By The Secretary Of The Air Force | Radio frequency MEMS switch contact metal selection |
US7601554B1 (en) | 2005-01-31 | 2009-10-13 | The United States Of America As Represented By The Secretary Of The Air Force | Shaped MEMS contact |
US7655996B1 (en) * | 2005-02-03 | 2010-02-02 | The United States Of America As Represented By The Secretary Of The Army | MEMS structure support and release mechanism |
US7404167B2 (en) * | 2005-02-23 | 2008-07-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for improving design window |
JP4707424B2 (en) * | 2005-03-18 | 2011-06-22 | 株式会社東芝 | Variable capacitance element, variable capacitance device, and mobile phone using variable capacitance device |
JP4498181B2 (en) * | 2005-03-22 | 2010-07-07 | 東京エレクトロン株式会社 | Switch array |
KR20070119717A (en) * | 2005-03-31 | 2007-12-20 | 몰렉스 인코포레이티드 | High-density, robust connector with dielectric insert |
DE102005016243B3 (en) | 2005-04-08 | 2006-09-28 | Austriamicrosystems Ag | Micromechanical component e.g. micro electro mechanical system structure, for use as e.g. micro sensor, has one metal layer of multi-layer structure extending at side over pile and electrically conductive membrane integrated in structure |
FR2885735B1 (en) * | 2005-05-10 | 2007-08-03 | St Microelectronics Sa | INTEGRATED CIRCUIT WAVE GUIDE |
US7692521B1 (en) * | 2005-05-12 | 2010-04-06 | Microassembly Technologies, Inc. | High force MEMS device |
US7884989B2 (en) * | 2005-05-27 | 2011-02-08 | Qualcomm Mems Technologies, Inc. | White interferometric modulators and methods for forming the same |
US7321275B2 (en) * | 2005-06-23 | 2008-01-22 | Intel Corporation | Ultra-low voltage capable zipper switch |
EP2495212A3 (en) * | 2005-07-22 | 2012-10-31 | QUALCOMM MEMS Technologies, Inc. | Mems devices having support structures and methods of fabricating the same |
JP4489651B2 (en) * | 2005-07-22 | 2010-06-23 | 株式会社日立製作所 | Semiconductor device and manufacturing method thereof |
WO2007015219A2 (en) * | 2005-08-03 | 2007-02-08 | Kolo Technologies, Inc. | Micro-electro-mechanical transducer having a surface plate |
US20070040637A1 (en) * | 2005-08-19 | 2007-02-22 | Yee Ian Y K | Microelectromechanical switches having mechanically active components which are electrically isolated from components of the switch used for the transmission of signals |
US7233048B2 (en) * | 2005-08-26 | 2007-06-19 | Innovative Micro Technology | MEMS device trench plating process and apparatus for through hole vias |
US7569926B2 (en) * | 2005-08-26 | 2009-08-04 | Innovative Micro Technology | Wafer level hermetic bond using metal alloy with raised feature |
US7528691B2 (en) * | 2005-08-26 | 2009-05-05 | Innovative Micro Technology | Dual substrate electrostatic MEMS switch with hermetic seal and method of manufacture |
US20070048887A1 (en) * | 2005-08-26 | 2007-03-01 | Innovative Micro Technology | Wafer level hermetic bond using metal alloy |
US7960208B2 (en) * | 2005-08-26 | 2011-06-14 | Innovative Micro Technology | Wafer level hermetic bond using metal alloy with raised feature |
US7582969B2 (en) * | 2005-08-26 | 2009-09-01 | Innovative Micro Technology | Hermetic interconnect structure and method of manufacture |
US8736081B2 (en) | 2005-08-26 | 2014-05-27 | Innovative Micro Technology | Wafer level hermetic bond using metal alloy with keeper layer |
US20070090474A1 (en) * | 2005-09-08 | 2007-04-26 | Li Gary G | MEMS device and method of fabrication |
US20080094149A1 (en) * | 2005-09-22 | 2008-04-24 | Sungsung Electronics Co., Ltd. | Power amplifier matching circuit and method using tunable mems devices |
US7332980B2 (en) * | 2005-09-22 | 2008-02-19 | Samsung Electronics Co., Ltd. | System and method for a digitally tunable impedance matching network |
CN101272982B (en) * | 2005-09-30 | 2012-03-21 | 高通Mems科技公司 | MEMS device and interconnects for same |
KR100827314B1 (en) * | 2005-10-10 | 2008-05-06 | 삼성전기주식회사 | Method of manufacturing MEMS element and optical modulator having flat surface by heat treatment |
US8043950B2 (en) * | 2005-10-26 | 2011-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US7630114B2 (en) * | 2005-10-28 | 2009-12-08 | Idc, Llc | Diffusion barrier layer for MEMS devices |
US20070096860A1 (en) * | 2005-11-02 | 2007-05-03 | Innovative Micro Technology | Compact MEMS thermal device and method of manufacture |
KR100744543B1 (en) * | 2005-12-08 | 2007-08-01 | 한국전자통신연구원 | Micro-electro mechanical systems switch and method of fabricating the same switch |
AU2006324371A1 (en) * | 2005-12-12 | 2007-06-21 | Telezygology Inc. | Developments in beam type fasteners |
US8194386B2 (en) * | 2005-12-22 | 2012-06-05 | Epcos Ag | Arrangement of MEMS devices having series coupled capacitors |
US7602261B2 (en) * | 2005-12-22 | 2009-10-13 | Intel Corporation | Micro-electromechanical system (MEMS) switch |
US7525151B2 (en) * | 2006-01-05 | 2009-04-28 | International Rectifier Corporation | Vertical DMOS device in integrated circuit |
FR2895986B1 (en) * | 2006-01-06 | 2008-09-05 | Centre Nat Rech Scient | PREPARATION OF MULTILAYER MICROCOMPONENTS BY THE METHOD OF THE SACRIFICIAL THICK LAYER |
US20070196048A1 (en) * | 2006-01-12 | 2007-08-23 | Almantas Galvanauskas | Optical waveform shaping |
US7916980B2 (en) | 2006-01-13 | 2011-03-29 | Qualcomm Mems Technologies, Inc. | Interconnect structure for MEMS device |
US7382515B2 (en) | 2006-01-18 | 2008-06-03 | Qualcomm Mems Technologies, Inc. | Silicon-rich silicon nitrides as etch stops in MEMS manufacture |
US20070170528A1 (en) * | 2006-01-20 | 2007-07-26 | Aaron Partridge | Wafer encapsulated microelectromechanical structure and method of manufacturing same |
US7678601B2 (en) * | 2006-01-20 | 2010-03-16 | Texas Instruments Incorporated | Method of forming an acceleration sensor |
US7671693B2 (en) * | 2006-02-17 | 2010-03-02 | Samsung Electronics Co., Ltd. | System and method for a tunable impedance matching network |
US7480432B2 (en) * | 2006-02-28 | 2009-01-20 | Corning Incorporated | Glass-based micropositioning systems and methods |
US7463113B2 (en) * | 2006-02-28 | 2008-12-09 | Motorla, Inc. | Apparatus and methods relating to electrically conductive path interfaces disposed within capacitor plate openings |
US7907033B2 (en) | 2006-03-08 | 2011-03-15 | Wispry, Inc. | Tunable impedance matching networks and tunable diplexer matching systems |
US7710045B2 (en) * | 2006-03-17 | 2010-05-04 | 3M Innovative Properties Company | Illumination assembly with enhanced thermal conductivity |
US7711239B2 (en) | 2006-04-19 | 2010-05-04 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device and method utilizing nanoparticles |
US7554421B2 (en) * | 2006-05-16 | 2009-06-30 | Intel Corporation | Micro-electromechanical system (MEMS) trampoline switch/varactor |
GB0610392D0 (en) | 2006-05-25 | 2006-07-05 | Univ Durham | Electro-mechanical actuator and apparatus incorporating such device |
US7649671B2 (en) | 2006-06-01 | 2010-01-19 | Qualcomm Mems Technologies, Inc. | Analog interferometric modulator device with electrostatic actuation and release |
US7605675B2 (en) * | 2006-06-20 | 2009-10-20 | Intel Corporation | Electromechanical switch with partially rigidified electrode |
US7527998B2 (en) | 2006-06-30 | 2009-05-05 | Qualcomm Mems Technologies, Inc. | Method of manufacturing MEMS devices providing air gap control |
US7911010B2 (en) * | 2006-07-17 | 2011-03-22 | Kwj Engineering, Inc. | Apparatus and method for microfabricated multi-dimensional sensors and sensing systems |
JP4234737B2 (en) * | 2006-07-24 | 2009-03-04 | 株式会社東芝 | MEMS switch |
JP4265630B2 (en) * | 2006-08-04 | 2009-05-20 | セイコーエプソン株式会社 | MEMS switch, voltage divider circuit, gain adjustment circuit, attenuator, and method of manufacturing MEMS switch |
EP2052396A2 (en) * | 2006-08-09 | 2009-04-29 | Philips Intellectual Property & Standards GmbH | Self-locking micro electro mechanical device |
US7495368B2 (en) * | 2006-08-31 | 2009-02-24 | Evigia Systems, Inc. | Bimorphic structures, sensor structures formed therewith, and methods therefor |
US7688167B2 (en) * | 2006-10-12 | 2010-03-30 | Innovative Micro Technology | Contact electrode for microdevices and etch method of manufacture |
JP5085101B2 (en) * | 2006-11-17 | 2012-11-28 | オリンパス株式会社 | Variable spectroscopic element |
WO2008064216A2 (en) * | 2006-11-20 | 2008-05-29 | Massachusetts Institute Of Technology | Micro-electro mechanical tunneling switch |
CN101188159B (en) * | 2006-11-24 | 2011-01-12 | 阎跃军 | Segment adjustable inductor |
US8222087B2 (en) | 2006-12-19 | 2012-07-17 | HGST Netherlands, B.V. | Seed layer for a heat spreader in a magnetic recording head |
US7706042B2 (en) | 2006-12-20 | 2010-04-27 | Qualcomm Mems Technologies, Inc. | MEMS device and interconnects for same |
KR100840644B1 (en) * | 2006-12-29 | 2008-06-24 | 동부일렉트로닉스 주식회사 | Switching device and method of fabricating the same |
TWI364399B (en) | 2006-12-30 | 2012-05-21 | Rohm & Haas Elect Mat | Three-dimensional microstructures and methods of formation thereof |
JP4916893B2 (en) * | 2007-01-05 | 2012-04-18 | 株式会社日本マイクロニクス | Probe manufacturing method |
US7400015B1 (en) * | 2007-01-15 | 2008-07-15 | International Business Machines Corporation | Semiconductor structure with field shield and method of forming the structure |
US8115987B2 (en) | 2007-02-01 | 2012-02-14 | Qualcomm Mems Technologies, Inc. | Modulating the intensity of light from an interferometric reflector |
WO2008103632A2 (en) * | 2007-02-20 | 2008-08-28 | Qualcomm Mems Technologies, Inc. | Equipment and methods for etching of mems |
US20080197964A1 (en) * | 2007-02-21 | 2008-08-21 | Simpler Networks Inc. | Mems actuators and switches |
US7755174B2 (en) | 2007-03-20 | 2010-07-13 | Nuvotonics, LLC | Integrated electronic components and methods of formation thereof |
EP1973189B1 (en) | 2007-03-20 | 2012-12-05 | Nuvotronics, LLC | Coaxial transmission line microstructures and methods of formation thereof |
KR20100016195A (en) * | 2007-04-04 | 2010-02-12 | 퀄컴 엠이엠스 테크놀로지스, 인크. | Eliminate release etch attack by interface modification in sacrificial layers |
US7643202B2 (en) | 2007-05-09 | 2010-01-05 | Qualcomm Mems Technologies, Inc. | Microelectromechanical system having a dielectric movable membrane and a mirror |
US7719752B2 (en) | 2007-05-11 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same |
DE112008001425T5 (en) * | 2007-05-25 | 2010-04-15 | Molex Inc., Lisle | A connection device that forms a heat sink and electrical connections between a heat generating device and a power source |
US8102638B2 (en) * | 2007-06-13 | 2012-01-24 | The University Court Of The University Of Edinburgh | Micro electromechanical capacitive switch |
US7625825B2 (en) * | 2007-06-14 | 2009-12-01 | Qualcomm Mems Technologies, Inc. | Method of patterning mechanical layer for MEMS structures |
US7630121B2 (en) * | 2007-07-02 | 2009-12-08 | Qualcomm Mems Technologies, Inc. | Electromechanical device with optical function separated from mechanical and electrical function |
US8068268B2 (en) | 2007-07-03 | 2011-11-29 | Qualcomm Mems Technologies, Inc. | MEMS devices having improved uniformity and methods for making them |
US8310016B2 (en) * | 2007-07-17 | 2012-11-13 | Kwj Engineering, Inc. | Apparatus and method for microfabricated multi-dimensional sensors and sensing systems |
US8367451B2 (en) * | 2007-07-23 | 2013-02-05 | Wispry, Inc. | Method and structures for fabricating MEMS devices on compliant layers |
CN101755232A (en) | 2007-07-25 | 2010-06-23 | 高通Mems科技公司 | Mems display devices and methods of fabricating the same |
EP2183623A1 (en) | 2007-07-31 | 2010-05-12 | Qualcomm Mems Technologies, Inc. | Devices for enhancing colour shift of interferometric modulators |
US8154378B2 (en) * | 2007-08-10 | 2012-04-10 | Alcatel Lucent | Thermal actuator for a MEMS-based relay switch |
JP2011501874A (en) * | 2007-09-14 | 2011-01-13 | クォルコム・メムズ・テクノロジーズ・インコーポレーテッド | Etching process used in MEMS manufacturing |
US7847999B2 (en) | 2007-09-14 | 2010-12-07 | Qualcomm Mems Technologies, Inc. | Interferometric modulator display devices |
US8097483B2 (en) * | 2007-10-15 | 2012-01-17 | Epcos Ag | Manufacturing a MEMS element having cantilever and cavity on a substrate |
TW200919593A (en) * | 2007-10-18 | 2009-05-01 | Asia Pacific Microsystems Inc | Elements and modules with micro caps and wafer level packaging method thereof |
US8058549B2 (en) | 2007-10-19 | 2011-11-15 | Qualcomm Mems Technologies, Inc. | Photovoltaic devices with integrated color interferometric film stacks |
WO2009052324A2 (en) | 2007-10-19 | 2009-04-23 | Qualcomm Mems Technologies, Inc. | Display with integrated photovoltaic device |
KR20100103467A (en) | 2007-10-23 | 2010-09-27 | 퀄컴 엠이엠스 테크놀로지스, 인크. | Adjustably transmissive mems-based devices |
US8941631B2 (en) | 2007-11-16 | 2015-01-27 | Qualcomm Mems Technologies, Inc. | Simultaneous light collection and illumination on an active display |
US20090140433A1 (en) * | 2007-11-30 | 2009-06-04 | Alces Technology, Inc. | MEMS chip-to-chip interconnects |
US8776514B2 (en) * | 2007-12-14 | 2014-07-15 | Lei Wu | Electrothermal microactuator for large vertical displacement without tilt or lateral shift |
US7609136B2 (en) * | 2007-12-20 | 2009-10-27 | General Electric Company | MEMS microswitch having a conductive mechanical stop |
US8071411B2 (en) * | 2007-12-21 | 2011-12-06 | The Royal Institution For The Advancement Of Learning/Mcgill University | Low temperature ceramic microelectromechanical structures |
US7863079B2 (en) | 2008-02-05 | 2011-01-04 | Qualcomm Mems Technologies, Inc. | Methods of reducing CD loss in a microelectromechanical device |
US8199020B1 (en) * | 2008-02-11 | 2012-06-12 | The United States Of America As Represented By The Secretary Of The Army | Thermal cutoff fuse for arbitrary temperatures |
US7989262B2 (en) | 2008-02-22 | 2011-08-02 | Cavendish Kinetics, Ltd. | Method of sealing a cavity |
US8164821B2 (en) * | 2008-02-22 | 2012-04-24 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device with thermal expansion balancing layer or stiffening layer |
US7944604B2 (en) | 2008-03-07 | 2011-05-17 | Qualcomm Mems Technologies, Inc. | Interferometric modulator in transmission mode |
US7612933B2 (en) | 2008-03-27 | 2009-11-03 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device with spacing layer |
EP2107038B1 (en) * | 2008-03-31 | 2012-05-16 | Imec | Electrostatically actuatable MEMS device featuring reduced substrate charging |
US7898723B2 (en) | 2008-04-02 | 2011-03-01 | Qualcomm Mems Technologies, Inc. | Microelectromechanical systems display element with photovoltaic structure |
US7969638B2 (en) | 2008-04-10 | 2011-06-28 | Qualcomm Mems Technologies, Inc. | Device having thin black mask and method of fabricating the same |
TW201000910A (en) * | 2008-04-21 | 2010-01-01 | Top Eng Co Ltd | Card for MEMS probe and method for manufacturing thereof |
US8451077B2 (en) | 2008-04-22 | 2013-05-28 | International Business Machines Corporation | MEMS switches with reduced switching voltage and methods of manufacture |
US7993950B2 (en) * | 2008-04-30 | 2011-08-09 | Cavendish Kinetics, Ltd. | System and method of encapsulation |
US8023191B2 (en) * | 2008-05-07 | 2011-09-20 | Qualcomm Mems Technologies, Inc. | Printable static interferometric images |
US7956759B1 (en) | 2008-05-13 | 2011-06-07 | The United States Of America As Represented By The Secretary Of The Army | Humidity sensitive cutoff fuse |
US8023167B2 (en) | 2008-06-25 | 2011-09-20 | Qualcomm Mems Technologies, Inc. | Backlight displays |
WO2010039307A2 (en) * | 2008-06-26 | 2010-04-08 | Cornell University | Cmos integrated micromechanical resonators and methods for fabricating the same |
US7859740B2 (en) | 2008-07-11 | 2010-12-28 | Qualcomm Mems Technologies, Inc. | Stiction mitigation with integrated mech micro-cantilevers through vertical stress gradient control |
US7977635B2 (en) * | 2008-08-08 | 2011-07-12 | Oliver Edwards | Radiant energy imager using null switching |
US7855826B2 (en) * | 2008-08-12 | 2010-12-21 | Qualcomm Mems Technologies, Inc. | Method and apparatus to reduce or eliminate stiction and image retention in interferometric modulator devices |
US8358266B2 (en) | 2008-09-02 | 2013-01-22 | Qualcomm Mems Technologies, Inc. | Light turning device with prismatic light turning features |
JP2012502274A (en) * | 2008-09-05 | 2012-01-26 | トップ・エンジニアリング・カンパニー・リミテッド | MEMS probe card and manufacturing method thereof |
ITTO20080714A1 (en) | 2008-09-30 | 2010-04-01 | St Microelectronics Srl | MICROELETTROMECHANICAL DEVICE PROVIDED WITH AN ANTI-ADHESION STRUCTURE AND ITS ANTI-ADHESION METHOD |
EP2370345B1 (en) | 2008-11-26 | 2017-07-05 | NXP USA, Inc. | Electromechanical transducer device having thermal compensation |
JP5512694B2 (en) * | 2008-11-26 | 2014-06-04 | フリースケール セミコンダクター インコーポレイテッド | Electromechanical transducer device and manufacturing method thereof |
US8257119B2 (en) | 2008-12-19 | 2012-09-04 | Honeywell International | Systems and methods for affixing a silicon device to a support structure |
US8445306B2 (en) * | 2008-12-24 | 2013-05-21 | International Business Machines Corporation | Hybrid MEMS RF switch and method of fabricating same |
US8957485B2 (en) * | 2009-01-21 | 2015-02-17 | Cavendish Kinetics, Ltd. | Fabrication of MEMS based cantilever switches by employing a split layer cantilever deposition scheme |
US8270056B2 (en) | 2009-03-23 | 2012-09-18 | Qualcomm Mems Technologies, Inc. | Display device with openings between sub-pixels and method of making same |
US8877648B2 (en) * | 2009-03-26 | 2014-11-04 | Semprius, Inc. | Methods of forming printable integrated circuit devices by selective etching to suspend the devices from a handling substrate and devices formed thereby |
JP5187441B2 (en) * | 2009-04-24 | 2013-04-24 | 株式会社村田製作所 | MEMS device and manufacturing method thereof |
FR2946036B1 (en) * | 2009-05-26 | 2011-11-25 | Thales Sa | METHOD FOR INTEGRATING MEMS-TYPE MICRO SWITCHES ON GAN SUBSTRATES COMPRISING ELECTRONIC POWER COMPONENTS |
KR20120090771A (en) | 2009-05-29 | 2012-08-17 | 퀄컴 엠이엠에스 테크놀로지스, 인크. | Illumination devices and methods of fabrication thereof |
JP2010284748A (en) * | 2009-06-11 | 2010-12-24 | Toshiba Corp | Electric component |
WO2011001293A2 (en) | 2009-06-29 | 2011-01-06 | Freescale Semiconductor, Inc. | Method of forming an electromechanical transducer device |
JP2011017626A (en) * | 2009-07-09 | 2011-01-27 | Sony Corp | Mechanical quantity detection member and mechanical quantity detection apparatus |
TWM378928U (en) * | 2009-07-29 | 2010-04-21 | Pixart Imaging Inc | Mems device and spring element of mems |
JP5398411B2 (en) * | 2009-08-10 | 2014-01-29 | 株式会社東芝 | Micro movable device and manufacturing method of micro movable device |
US8138007B2 (en) * | 2009-08-26 | 2012-03-20 | Freescale Semiconductor, Inc. | MEMS device with stress isolation and method of fabrication |
US8569091B2 (en) * | 2009-08-27 | 2013-10-29 | International Business Machines Corporation | Integrated circuit switches, design structure and methods of fabricating the same |
US8270062B2 (en) | 2009-09-17 | 2012-09-18 | Qualcomm Mems Technologies, Inc. | Display device with at least one movable stop element |
US20110063068A1 (en) * | 2009-09-17 | 2011-03-17 | The George Washington University | Thermally actuated rf microelectromechanical systems switch |
US8354899B2 (en) * | 2009-09-23 | 2013-01-15 | General Electric Company | Switch structure and method |
US8779886B2 (en) * | 2009-11-30 | 2014-07-15 | General Electric Company | Switch structures |
US8826529B2 (en) | 2009-09-23 | 2014-09-09 | General Electric Company | Method of forming a micro-electromechanical system device |
US8488228B2 (en) | 2009-09-28 | 2013-07-16 | Qualcomm Mems Technologies, Inc. | Interferometric display with interferometric reflector |
US20110123783A1 (en) * | 2009-11-23 | 2011-05-26 | David Sherrer | Multilayer build processses and devices thereof |
CN102086017B (en) * | 2009-12-03 | 2014-11-26 | 原相科技股份有限公司 | Micro electronmechanical element and micro electronmechanical spring element |
CN102110616B (en) * | 2009-12-25 | 2012-09-05 | 华东光电集成器件研究所 | Method for realizing thin film multilayer wiring on low temperature cofired ceramic (LTCC) substrate |
US8237263B2 (en) * | 2009-12-31 | 2012-08-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for cooling an integrated circuit |
CN102741958B (en) | 2010-01-15 | 2016-09-14 | 维斯普瑞公司 | MEMS cantilever adjustable condenser and method equipped with spring |
KR101067214B1 (en) * | 2010-04-07 | 2011-09-22 | 삼성전기주식회사 | A printed circuit board and a method of manufacturing the same |
KR20130100232A (en) | 2010-04-09 | 2013-09-10 | 퀄컴 엠이엠에스 테크놀로지스, 인크. | Mechanical layer of an electromechanical device and methods of forming the same |
CN101814866B (en) * | 2010-04-16 | 2012-08-01 | 大连理工大学 | Method for manufacturing electrothermal drive microstructure |
US20110269295A1 (en) * | 2010-04-30 | 2011-11-03 | Hopper Peter J | Method of Forming a Semiconductor Wafer that Provides Galvanic Isolation |
US8722445B2 (en) | 2010-06-25 | 2014-05-13 | International Business Machines Corporation | Planar cavity MEMS and related structures, methods of manufacture and design structures |
JP5667391B2 (en) * | 2010-08-11 | 2015-02-12 | 日本電波工業株式会社 | Disc type MEMS vibrator |
FR2963784B1 (en) * | 2010-08-11 | 2012-08-31 | Univ Limoges | ELECTROMECHANICAL MICROSYSTEMS WITH AIR GAPS. |
EP2606485A1 (en) | 2010-08-17 | 2013-06-26 | Qualcomm Mems Technologies, Inc. | Actuation and calibration of a charge neutral electrode in an interferometric display device |
US9057872B2 (en) | 2010-08-31 | 2015-06-16 | Qualcomm Mems Technologies, Inc. | Dielectric enhanced mirror for IMOD display |
DE102010047128A1 (en) * | 2010-09-30 | 2012-04-05 | Infineon Technologies Ag | Hall sensor arrangement for redundantly measuring a magnetic field |
KR20120064364A (en) * | 2010-12-09 | 2012-06-19 | 삼성전자주식회사 | Method for manufacturing the solar cell |
US8735200B2 (en) * | 2010-12-13 | 2014-05-27 | Sagnik Pal | Fabrication of robust electrothermal MEMS with fast thermal response |
US9221677B2 (en) * | 2010-12-20 | 2015-12-29 | Rf Micro Devices, Inc. | Composite sacrificial structure for reliably creating a contact gap in a MEMS switch |
US20120174572A1 (en) * | 2011-01-10 | 2012-07-12 | Donato Clausi | Method for mechanical and electrical integration of sma wires to microsystems |
US8171800B1 (en) * | 2011-01-25 | 2012-05-08 | Continental Automotive Systems, Inc. | Differential pressure sensor using dual backside absolute pressure sensing |
US8962443B2 (en) * | 2011-01-31 | 2015-02-24 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Semiconductor device having an airbridge and method of fabricating the same |
US8531192B2 (en) * | 2011-04-15 | 2013-09-10 | Robert Bosch Gmbh | High-impedance MEMS switch |
US8659816B2 (en) | 2011-04-25 | 2014-02-25 | Qualcomm Mems Technologies, Inc. | Mechanical layer and methods of making the same |
US8866300B1 (en) | 2011-06-05 | 2014-10-21 | Nuvotronics, Llc | Devices and methods for solder flow control in three-dimensional microstructures |
US8814601B1 (en) | 2011-06-06 | 2014-08-26 | Nuvotronics, Llc | Batch fabricated microconnectors |
EP2718225A4 (en) * | 2011-06-07 | 2015-01-07 | Wispry Inc | Systems and methods for current density optimization in cmos-integrated mems capacitive devices |
US9120667B2 (en) | 2011-06-20 | 2015-09-01 | International Business Machines Corporation | Micro-electro-mechanical system (MEMS) and related actuator bumps, methods of manufacture and design structures |
US8973250B2 (en) | 2011-06-20 | 2015-03-10 | International Business Machines Corporation | Methods of manufacturing a micro-electro-mechanical system (MEMS) structure |
US8643140B2 (en) * | 2011-07-11 | 2014-02-04 | United Microelectronics Corp. | Suspended beam for use in MEMS device |
KR101982887B1 (en) | 2011-07-13 | 2019-05-27 | 누보트로닉스, 인크. | Methods of fabricating electronic and mechanical structures |
CN102367165B (en) * | 2011-08-31 | 2015-01-21 | 华东光电集成器件研究所 | Method for interconnecting electrodes of MEMS (micro electro mechanical system) device based on SOI (silicon-on-insulator) |
CN102423258B (en) * | 2011-09-20 | 2013-12-25 | 上海交通大学 | MEMS (Micro Electro Mechanical System) technology-based wireless transmission implantable symmetrical structure pressure sensor |
US20130106875A1 (en) * | 2011-11-02 | 2013-05-02 | Qualcomm Mems Technologies, Inc. | Method of improving thin-film encapsulation for an electromechanical systems assembly |
US8736939B2 (en) | 2011-11-04 | 2014-05-27 | Qualcomm Mems Technologies, Inc. | Matching layer thin-films for an electromechanical systems reflective display device |
US9349558B2 (en) * | 2011-12-06 | 2016-05-24 | Palo Alto Research Center Incorporated | Mechanically acuated heat switch |
FR2984013B1 (en) | 2011-12-09 | 2014-01-10 | St Microelectronics Rousset | MECHANICAL INTEGRATED ELECTRICAL SWITCHING DEVICE HAVING A BLOCKED STATE |
FR2984010B1 (en) * | 2011-12-09 | 2014-01-03 | St Microelectronics Rousset | INTEGRATED CAPACITIVE DEVICE HAVING THERMALLY VARIABLE CAPACITIVE VALUE |
US8673670B2 (en) | 2011-12-15 | 2014-03-18 | International Business Machines Corporation | Micro-electro-mechanical system (MEMS) structures and design structures |
FR2988712B1 (en) | 2012-04-02 | 2014-04-11 | St Microelectronics Rousset | INTEGRATED CIRCUIT EQUIPPED WITH A DEVICE FOR DETECTING ITS SPACE ORIENTATION AND / OR CHANGE OF THIS ORIENTATION. |
US8748999B2 (en) * | 2012-04-20 | 2014-06-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Capacitive sensors and methods for forming the same |
EP2842165A4 (en) * | 2012-04-26 | 2015-10-14 | Hewlett Packard Development Co | Customizable nonlinear electrical devices |
CN104471698B (en) * | 2012-07-06 | 2016-12-07 | 苹果公司 | There is the compliance bipolar microdevice transfer head of silicon electrode |
US8569115B1 (en) | 2012-07-06 | 2013-10-29 | LuxVue Technology Corporation | Method of forming a compliant bipolar micro device transfer head with silicon electrodes |
US9162878B2 (en) | 2012-08-30 | 2015-10-20 | Innovative Micro Technology | Wafer level hermetic bond using metal alloy with raised feature and wetting layer |
US9325044B2 (en) | 2013-01-26 | 2016-04-26 | Nuvotronics, Inc. | Multi-layer digital elliptic filter and method |
JP6105304B2 (en) * | 2013-01-31 | 2017-03-29 | ルネサスエレクトロニクス株式会社 | Inductor device and semiconductor device |
US9306255B1 (en) | 2013-03-15 | 2016-04-05 | Nuvotronics, Inc. | Microstructure including microstructural waveguide elements and/or IC chips that are mechanically interconnected to each other |
US9306254B1 (en) | 2013-03-15 | 2016-04-05 | Nuvotronics, Inc. | Substrate-free mechanical interconnection of electronic sub-systems using a spring configuration |
US9233832B2 (en) | 2013-05-10 | 2016-01-12 | Globalfoundries Inc. | Micro-electro-mechanical system (MEMS) structures and design structures |
FR3009653B1 (en) * | 2013-08-09 | 2015-08-07 | Commissariat Energie Atomique | DEVICE FOR CONVERTING THERMAL ENERGY IN ELECTRICAL ENERGY |
FR3012671B1 (en) * | 2013-10-29 | 2015-11-13 | St Microelectronics Rousset | INTEGRATED MECHANICAL DEVICE WITH VERTICAL MOVEMENT |
JP6535347B2 (en) | 2014-01-17 | 2019-06-26 | ヌボトロニクス、インク. | Wafer-scale test interface unit: Low loss and high isolation equipment and methods for high speed and high density mixed signal interconnects and contactors |
WO2015109532A1 (en) * | 2014-01-24 | 2015-07-30 | 吉瑞高新科技股份有限公司 | Battery holder, electronic cigarette and atomisation control method for electronic cigarette |
US9796578B2 (en) * | 2014-03-10 | 2017-10-24 | Apple Inc. | Microelectromechanical systems devices with improved reliability |
US9385306B2 (en) | 2014-03-14 | 2016-07-05 | The United States Of America As Represented By The Secretary Of The Army | Ferroelectric mechanical memory and method |
WO2015153781A1 (en) * | 2014-04-01 | 2015-10-08 | Wispry, Inc. | Systems, devices, and methods for reducing surface dielectric charging in a rf mems actuator element |
EP2937311B1 (en) * | 2014-04-25 | 2019-08-21 | Rolex Sa | Method for manufacturing a reinforced timepiece component, corresponding timepiece component and timepiece |
US9274277B2 (en) | 2014-05-15 | 2016-03-01 | Globalfoundries Inc. | Waveguide devices with supporting anchors |
FR3022691B1 (en) | 2014-06-23 | 2016-07-01 | Stmicroelectronics Rousset | INTEGRATED COMMANDABLE CAPACITIVE DEVICE |
CN105366624B (en) * | 2014-07-30 | 2017-06-13 | 中芯国际集成电路制造(上海)有限公司 | A kind of semiconductor devices and its manufacture method and electronic installation |
CN105428256B (en) * | 2014-07-30 | 2018-07-20 | 中芯国际集成电路制造(上海)有限公司 | A kind of semiconductor devices and its manufacturing method and electronic device |
US20160099112A1 (en) * | 2014-10-03 | 2016-04-07 | wiSpry, Inc. . | Systems, devices, and methods to reduce dielectric charging in micro-electro-mechanical systems devices |
US10132699B1 (en) | 2014-10-06 | 2018-11-20 | National Technology & Engineering Solutions Of Sandia, Llc | Electrodeposition processes for magnetostrictive resonators |
US10847469B2 (en) | 2016-04-26 | 2020-11-24 | Cubic Corporation | CTE compensation for wafer-level and chip-scale packages and assemblies |
EP3224899A4 (en) | 2014-12-03 | 2018-08-22 | Nuvotronics, Inc. | Systems and methods for manufacturing stacked circuits and transmission lines |
US9466452B1 (en) | 2015-03-31 | 2016-10-11 | Stmicroelectronics, Inc. | Integrated cantilever switch |
FR3034567B1 (en) | 2015-03-31 | 2017-04-28 | St Microelectronics Rousset | METALLIC DEVICE WITH IMPROVED MOBILE PIECE (S) LOADED IN A CAVITY OF THE INTERCONNECTION PART ("BEOL") OF AN INTEGRATED CIRCUIT |
US9971970B1 (en) | 2015-04-27 | 2018-05-15 | Rigetti & Co, Inc. | Microwave integrated quantum circuits with VIAS and methods for making the same |
WO2017019557A1 (en) * | 2015-07-24 | 2017-02-02 | Trustees Of Boston University | Mems devices for smart lighting applications |
CN108883927B (en) * | 2016-02-29 | 2023-06-13 | 密歇根大学董事会 | Method for manufacturing three-dimensional microstructure device |
JP2019517147A (en) | 2016-05-20 | 2019-06-20 | メイコム テクノロジー ソリューションズ ホールディングス インコーポレイテッド | Semiconductor laser and process for planarization of semiconductor laser |
US20180079640A1 (en) * | 2016-09-22 | 2018-03-22 | Innovative Micro Technology | Mems device with offset electrode |
CN107917750B (en) * | 2016-10-08 | 2020-06-26 | 北京大学 | MEMS (micro-electromechanical system) thermal type acoustic particle sensor |
CN107915280B (en) * | 2016-10-11 | 2020-05-26 | 青岛经济技术开发区海尔热水器有限公司 | Water bar system with double circulation modes |
DE102016122525B4 (en) | 2016-11-22 | 2019-09-19 | Infineon Technologies Ag | Sensor components of a microelectronic system |
US10996125B2 (en) * | 2017-05-17 | 2021-05-04 | Infineon Technologies Ag | Pressure sensors and method for forming a MEMS pressure sensor |
US11276727B1 (en) | 2017-06-19 | 2022-03-15 | Rigetti & Co, Llc | Superconducting vias for routing electrical signals through substrates and their methods of manufacture |
US11121301B1 (en) | 2017-06-19 | 2021-09-14 | Rigetti & Co, Inc. | Microwave integrated quantum circuits with cap wafers and their methods of manufacture |
US11170984B2 (en) * | 2017-07-24 | 2021-11-09 | Spark Thermionics, Inc. | Small gap device system and method of fabrication |
JP6842386B2 (en) * | 2017-08-31 | 2021-03-17 | キオクシア株式会社 | Semiconductor device |
WO2019090057A1 (en) * | 2017-11-02 | 2019-05-09 | Nextinput, Inc. | Sealed force sensor with etch stop layer |
US10720338B1 (en) | 2017-11-07 | 2020-07-21 | Honeywell Federal Manufacturing & Technologies, Llc | Low temperature cofired ceramic substrates and fabrication techniques for the same |
US10319654B1 (en) | 2017-12-01 | 2019-06-11 | Cubic Corporation | Integrated chip scale packages |
US11040871B2 (en) * | 2017-12-14 | 2021-06-22 | Invensense, Inc. | Device comprising a micro-electro-mechanical system substrate with protrusions of different heights that has been integrated with a complementary metal-oxide-semiconductor substrate |
US11710678B2 (en) | 2018-08-10 | 2023-07-25 | Frore Systems Inc. | Combined architecture for cooling devices |
US11464140B2 (en) | 2019-12-06 | 2022-10-04 | Frore Systems Inc. | Centrally anchored MEMS-based active cooling systems |
GB201815797D0 (en) | 2018-09-27 | 2018-11-14 | Sofant Tech Ltd | Mems devices and circuits including same |
US10793422B2 (en) * | 2018-12-17 | 2020-10-06 | Vanguard International Semiconductor Singapore Pte. Ltd. | Microelectromechanical systems packages and methods for packaging a microelectromechanical systems device |
TWI708424B (en) * | 2019-07-04 | 2020-10-21 | 國家中山科學研究院 | Direct attached switch device for active frequency selective surface and manufacturing method thereof |
KR20220082053A (en) | 2019-10-30 | 2022-06-16 | 프로리 시스템스 인코포레이티드 | MEMS based airflow system |
US11796262B2 (en) | 2019-12-06 | 2023-10-24 | Frore Systems Inc. | Top chamber cavities for center-pinned actuators |
US11510341B2 (en) * | 2019-12-06 | 2022-11-22 | Frore Systems Inc. | Engineered actuators usable in MEMs active cooling devices |
CN113336187A (en) * | 2020-02-14 | 2021-09-03 | 绍兴中芯集成电路制造股份有限公司 | MEMS device packaging method and packaging structure |
JP2023544160A (en) | 2020-10-02 | 2023-10-20 | フロー・システムズ・インコーポレーテッド | active heat sink |
US20230068451A1 (en) * | 2021-08-30 | 2023-03-02 | Texas Instruments Incorporated | Methods and apparatus to thermally actuate microelectromechanical structures devices |
WO2023059519A2 (en) * | 2021-10-04 | 2023-04-13 | Formfactor, Inc. | Thermal management techniques for high power integrated circuits operating in dry cryogenic environments |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5796152A (en) * | 1997-01-24 | 1998-08-18 | Roxburgh Ltd. | Cantilevered microstructure |
US5824186A (en) * | 1993-12-17 | 1998-10-20 | The Regents Of The University Of California | Method and apparatus for fabricating self-assembling microstructures |
US6316278B1 (en) * | 1999-03-16 | 2001-11-13 | Alien Technology Corporation | Methods for fabricating a multiple modular assembly |
US6324748B1 (en) * | 1996-12-16 | 2001-12-04 | Jds Uniphase Corporation | Method of fabricating a microelectro mechanical structure having an arched beam |
Family Cites Families (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2095911B (en) * | 1981-03-17 | 1985-02-13 | Standard Telephones Cables Ltd | Electrical switch device |
US4423401A (en) * | 1982-07-21 | 1983-12-27 | Tektronix, Inc. | Thin-film electrothermal device |
US5025346A (en) * | 1989-02-17 | 1991-06-18 | Regents Of The University Of California | Laterally driven resonant microstructures |
US5376772A (en) * | 1990-08-31 | 1994-12-27 | The Pilot Ink Co., Ltd. | Electrothermal instrument with heat generating element of sintered BaTiO3 in contact with heat transmitting member |
JP2804196B2 (en) | 1991-10-18 | 1998-09-24 | 株式会社日立製作所 | Microsensor and control system using the same |
US5479042A (en) * | 1993-02-01 | 1995-12-26 | Brooktree Corporation | Micromachined relay and method of forming the relay |
US5662771A (en) * | 1994-12-01 | 1997-09-02 | Analog Devices, Inc. | Surface micromachining process |
US5619177A (en) * | 1995-01-27 | 1997-04-08 | Mjb Company | Shape memory alloy microactuator having an electrostatic force and heating means |
US5597643A (en) * | 1995-03-13 | 1997-01-28 | Hestia Technologies, Inc. | Multi-tier laminate substrate with internal heat spreader |
US5629794A (en) * | 1995-05-31 | 1997-05-13 | Texas Instruments Incorporated | Spatial light modulator having an analog beam for steering light |
US5578976A (en) * | 1995-06-22 | 1996-11-26 | Rockwell International Corporation | Micro electromechanical RF switch |
US5717631A (en) * | 1995-07-21 | 1998-02-10 | Carnegie Mellon University | Microelectromechanical structure and process of making same |
GB2304918B (en) * | 1995-08-30 | 1999-05-19 | Daewoo Electronics Co Ltd | Method for manufacturing a thin film actuated mirror having a stable elastic member |
US5920391A (en) * | 1995-10-27 | 1999-07-06 | Schlumberger Industries, S.A. | Tunable Fabry-Perot filter for determining gas concentration |
US5638946A (en) * | 1996-01-11 | 1997-06-17 | Northeastern University | Micromechanical switch with insulated switch contact |
JPH09232465A (en) * | 1996-02-27 | 1997-09-05 | Fuji Kiko Denshi Kk | Printed wiring board for mounting semiconductor |
US5914801A (en) * | 1996-09-27 | 1999-06-22 | Mcnc | Microelectromechanical devices including rotating plates and related methods |
US6232847B1 (en) * | 1997-04-28 | 2001-05-15 | Rockwell Science Center, Llc | Trimmable singleband and tunable multiband integrated oscillator using micro-electromechanical system (MEMS) technology |
US5870007A (en) * | 1997-06-16 | 1999-02-09 | Roxburgh Ltd. | Multi-dimensional physical actuation of microstructures |
JP4240575B2 (en) | 1998-05-15 | 2009-03-18 | ヤマハ株式会社 | Musical sound synthesis method, recording medium, and musical sound synthesizer |
US6046659A (en) * | 1998-05-15 | 2000-04-04 | Hughes Electronics Corporation | Design and fabrication of broadband surface-micromachined micro-electro-mechanical switches for microwave and millimeter-wave applications |
US6154176A (en) * | 1998-08-07 | 2000-11-28 | Sarnoff Corporation | Antennas formed using multilayer ceramic substrates |
DE69831228T2 (en) * | 1998-08-14 | 2006-07-13 | Renata Ag | Fuse and this containing battery |
US6040611A (en) * | 1998-09-10 | 2000-03-21 | Hughes Electonics Corporation | Microelectromechanical device |
JP2000188049A (en) * | 1998-12-22 | 2000-07-04 | Nec Corp | Micro machine switch and manufacture thereof |
US6236300B1 (en) * | 1999-03-26 | 2001-05-22 | R. Sjhon Minners | Bistable micro-switch and method of manufacturing the same |
US6229683B1 (en) * | 1999-06-30 | 2001-05-08 | Mcnc | High voltage micromachined electrostatic switch |
US6057520A (en) * | 1999-06-30 | 2000-05-02 | Mcnc | Arc resistant high voltage micromachined electrostatic switch |
US6175170B1 (en) * | 1999-09-10 | 2001-01-16 | Sridhar Kota | Compliant displacement-multiplying apparatus for microelectromechanical systems |
US6211598B1 (en) * | 1999-09-13 | 2001-04-03 | Jds Uniphase Inc. | In-plane MEMS thermal actuator and associated fabrication methods |
US6307452B1 (en) * | 1999-09-16 | 2001-10-23 | Motorola, Inc. | Folded spring based micro electromechanical (MEM) RF switch |
US6310339B1 (en) * | 1999-10-28 | 2001-10-30 | Hrl Laboratories, Llc | Optically controlled MEM switches |
US6396368B1 (en) * | 1999-11-10 | 2002-05-28 | Hrl Laboratories, Llc | CMOS-compatible MEM switches and method of making |
US6535318B1 (en) * | 1999-11-12 | 2003-03-18 | Jds Uniphase Corporation | Integrated optoelectronic devices having pop-up mirrors therein and methods of forming and operating same |
CN1197108C (en) * | 1999-12-10 | 2005-04-13 | 皇家菲利浦电子有限公司 | Electronic devices including micromechanical switches |
US6229684B1 (en) * | 1999-12-15 | 2001-05-08 | Jds Uniphase Inc. | Variable capacitor and associated fabrication method |
US6367251B1 (en) * | 2000-04-05 | 2002-04-09 | Jds Uniphase Corporation | Lockable microelectromechanical actuators using thermoplastic material, and methods of operating same |
US6275325B1 (en) | 2000-04-07 | 2001-08-14 | Microsoft Corporation | Thermally activated microelectromechanical systems actuator |
US6580170B2 (en) * | 2000-06-22 | 2003-06-17 | Texas Instruments Incorporated | Semiconductor device protective overcoat with enhanced adhesion to polymeric materials |
US6555404B1 (en) * | 2000-08-01 | 2003-04-29 | Hrl Laboratories, Llc | Method of manufacturing a dual wafer tunneling gyroscope |
US6630367B1 (en) * | 2000-08-01 | 2003-10-07 | Hrl Laboratories, Llc | Single crystal dual wafer, tunneling sensor and a method of making same |
US6708491B1 (en) * | 2000-09-12 | 2004-03-23 | 3M Innovative Properties Company | Direct acting vertical thermal actuator |
US6531947B1 (en) * | 2000-09-12 | 2003-03-11 | 3M Innovative Properties Company | Direct acting vertical thermal actuator with controlled bending |
US6504118B2 (en) * | 2000-10-27 | 2003-01-07 | Daniel J Hyman | Microfabricated double-throw relay with multimorph actuator and electrostatic latch mechanism |
US6483056B2 (en) * | 2000-10-27 | 2002-11-19 | Daniel J Hyman | Microfabricated relay with multimorph actuator and electrostatic latch mechanism |
US6538798B2 (en) * | 2000-12-11 | 2003-03-25 | Axsun Technologies, Inc. | Process for fabricating stiction control bumps on optical membrane via conformal coating of etch holes |
US6583374B2 (en) * | 2001-02-20 | 2003-06-24 | Rockwell Automation Technologies, Inc. | Microelectromechanical system (MEMS) digital electrical isolator |
WO2002073673A1 (en) * | 2001-03-13 | 2002-09-19 | Rochester Institute Of Technology | A micro-electro-mechanical switch and a method of using and making thereof |
US6522452B2 (en) * | 2001-04-26 | 2003-02-18 | Jds Uniphase Corporation | Latchable microelectromechanical structures using non-newtonian fluids, and methods of operating same |
US20020162685A1 (en) * | 2001-05-07 | 2002-11-07 | Jeffrey Gotro | Thermal dissipating printed circuit board and methods |
US6664885B2 (en) * | 2001-08-31 | 2003-12-16 | Adc Telecommunications, Inc. | Thermally activated latch |
AU2002363529A1 (en) | 2001-11-09 | 2003-05-19 | Coventor, Incorporated | Micro-scale interconnect device with internal heat spreader and method for fabricating same |
-
2002
- 2002-11-08 AU AU2002363529A patent/AU2002363529A1/en not_active Abandoned
- 2002-11-08 EP EP02793903A patent/EP1461816B1/en not_active Expired - Lifetime
- 2002-11-08 EP EP02793902A patent/EP1454349B1/en not_active Expired - Lifetime
- 2002-11-08 EP EP06126734A patent/EP1760746B1/en not_active Expired - Lifetime
- 2002-11-08 CN CNB028269748A patent/CN100550429C/en not_active Expired - Lifetime
- 2002-11-08 DE DE60217924T patent/DE60217924T2/en not_active Expired - Lifetime
- 2002-11-08 EP EP06118802A patent/EP1717195B1/en not_active Expired - Lifetime
- 2002-11-08 WO PCT/US2002/035923 patent/WO2003043042A1/en not_active Application Discontinuation
- 2002-11-08 DE DE60229675T patent/DE60229675D1/en not_active Expired - Lifetime
- 2002-11-08 AT AT06118798T patent/ATE412611T1/en not_active IP Right Cessation
- 2002-11-08 EP EP06126731A patent/EP1760036B1/en not_active Expired - Lifetime
- 2002-11-08 AT AT06116530T patent/ATE417021T1/en not_active IP Right Cessation
- 2002-11-08 EP EP06116530A patent/EP1721866B1/en not_active Expired - Lifetime
- 2002-11-08 AT AT06126734T patent/ATE495538T1/en not_active IP Right Cessation
- 2002-11-08 AU AU2002359369A patent/AU2002359369A1/en not_active Abandoned
- 2002-11-08 AU AU2002359370A patent/AU2002359370A1/en not_active Abandoned
- 2002-11-08 AT AT06118802T patent/ATE524412T1/en not_active IP Right Cessation
- 2002-11-08 WO PCT/US2002/035927 patent/WO2003043038A2/en active IP Right Grant
- 2002-11-08 WO PCT/US2002/035925 patent/WO2003043044A1/en active IP Right Grant
- 2002-11-08 AT AT02793902T patent/ATE341098T1/en not_active IP Right Cessation
- 2002-11-08 AT AT02793903T patent/ATE352854T1/en not_active IP Right Cessation
- 2002-11-08 AT AT02797085T patent/ATE372955T1/en not_active IP Right Cessation
- 2002-11-08 AT AT06118800T patent/ATE432240T1/en not_active IP Right Cessation
- 2002-11-08 US US10/290,779 patent/US6876047B2/en not_active Expired - Lifetime
- 2002-11-08 DE DE60238956T patent/DE60238956D1/en not_active Expired - Lifetime
- 2002-11-08 EP EP06118800A patent/EP1717194B1/en not_active Expired - Lifetime
- 2002-11-08 DE DE60230341T patent/DE60230341D1/en not_active Expired - Lifetime
- 2002-11-08 US US10/290,807 patent/US6882264B2/en not_active Expired - Fee Related
- 2002-11-08 DE DE60215045T patent/DE60215045T2/en not_active Expired - Lifetime
- 2002-11-08 DE DE60222468T patent/DE60222468T2/en not_active Expired - Lifetime
- 2002-11-08 US US10/291,107 patent/US6876482B2/en not_active Expired - Lifetime
- 2002-11-08 DE DE60232471T patent/DE60232471D1/en not_active Expired - Lifetime
- 2002-11-08 EP EP02797085A patent/EP1454333B1/en not_active Expired - Lifetime
- 2002-11-08 WO PCT/US2002/036009 patent/WO2003041133A2/en not_active Application Discontinuation
- 2002-11-08 US US10/290,920 patent/US6746891B2/en not_active Expired - Lifetime
- 2002-11-08 CN CNB028269756A patent/CN100474519C/en not_active Expired - Lifetime
- 2002-11-08 EP EP06118798A patent/EP1717193B1/en not_active Expired - Lifetime
- 2002-11-08 CN CNB028269144A patent/CN1292447C/en not_active Expired - Lifetime
- 2002-11-08 US US10/291,146 patent/US6847114B2/en not_active Expired - Lifetime
- 2002-11-08 WO PCT/US2002/035926 patent/WO2003042721A2/en active IP Right Grant
- 2002-11-08 US US10/291,125 patent/US8264054B2/en not_active Expired - Lifetime
- 2002-11-08 WO PCT/US2002/035988 patent/WO2003040338A2/en not_active Application Discontinuation
-
2004
- 2004-04-02 US US10/817,270 patent/US6917086B2/en not_active Expired - Lifetime
- 2004-04-22 US US10/831,012 patent/US20040197960A1/en not_active Abandoned
-
2006
- 2006-07-25 US US11/492,671 patent/US8420427B2/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5824186A (en) * | 1993-12-17 | 1998-10-20 | The Regents Of The University Of California | Method and apparatus for fabricating self-assembling microstructures |
US6324748B1 (en) * | 1996-12-16 | 2001-12-04 | Jds Uniphase Corporation | Method of fabricating a microelectro mechanical structure having an arched beam |
US5796152A (en) * | 1997-01-24 | 1998-08-18 | Roxburgh Ltd. | Cantilevered microstructure |
US6316278B1 (en) * | 1999-03-16 | 2001-11-13 | Alien Technology Corporation | Methods for fabricating a multiple modular assembly |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007007206A3 (en) * | 2005-03-18 | 2007-06-14 | Simpler Networks Inc | Mems actuators and switches |
WO2008008162A2 (en) * | 2006-06-28 | 2008-01-17 | Qualcomm Mems Technologies, Inc. | Support structure for free-standing mems device and methods for forming the same |
WO2008008162A3 (en) * | 2006-06-28 | 2008-04-03 | Qualcomm Mems Technologies Inc | Support structure for free-standing mems device and methods for forming the same |
US7684106B2 (en) | 2006-11-02 | 2010-03-23 | Qualcomm Mems Technologies, Inc. | Compatible MEMS switch architecture |
US8963159B2 (en) | 2011-04-04 | 2015-02-24 | Qualcomm Mems Technologies, Inc. | Pixel via and methods of forming the same |
US9134527B2 (en) | 2011-04-04 | 2015-09-15 | Qualcomm Mems Technologies, Inc. | Pixel via and methods of forming the same |
WO2013106783A1 (en) * | 2012-01-13 | 2013-07-18 | Qualcomm Mems Technologies, Inc. | Electrostatically transduced sensors composed of photochemically etched glass |
EP2833388A3 (en) * | 2013-07-31 | 2015-03-11 | Analog Devices Technology | A MEMS Switch Device and Method of Fabrication |
US9911563B2 (en) | 2013-07-31 | 2018-03-06 | Analog Devices Global | MEMS switch device and method of fabrication |
US9162868B2 (en) | 2013-11-27 | 2015-10-20 | Infineon Technologies Ag | MEMS device |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6882264B2 (en) | Electrothermal self-latching MEMS switch and method | |
US6897537B2 (en) | Micro-electro-mechanical system (MEMS) variable capacitor apparatuses and related methods | |
US7388316B2 (en) | Micro-electro-mechanical system (MEMS) variable capacitor apparatuses, systems and related methods | |
EP1166352B1 (en) | Micro-relay | |
de los Santos et al. | de los Santos |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SI SK SL TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LU MC NL PT SE SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
122 | Ep: pct application non-entry in european phase | ||
NENP | Non-entry into the national phase |
Ref country code: JP |
|
WWW | Wipo information: withdrawn in national office |
Country of ref document: JP |