WO2003038881A1 - Direct bonding of articles containing silicon - Google Patents

Direct bonding of articles containing silicon Download PDF

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Publication number
WO2003038881A1
WO2003038881A1 PCT/US2002/033208 US0233208W WO03038881A1 WO 2003038881 A1 WO2003038881 A1 WO 2003038881A1 US 0233208 W US0233208 W US 0233208W WO 03038881 A1 WO03038881 A1 WO 03038881A1
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WO
WIPO (PCT)
Prior art keywords
opposing surfaces
bonding
contacting
solution
contact
Prior art date
Application number
PCT/US2002/033208
Other languages
French (fr)
Inventor
Robert Sabia
Original Assignee
Corning Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/035,564 external-priority patent/US6814833B2/en
Application filed by Corning Incorporated filed Critical Corning Incorporated
Publication of WO2003038881A1 publication Critical patent/WO2003038881A1/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76256Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • C03C27/06Joining glass to glass by processes other than fusing
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/001Joining burned ceramic articles with other burned ceramic articles or other articles by heating directly with other burned ceramic articles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2315/00Other materials containing non-metallic inorganic compounds not provided for in groups B32B2311/00 - B32B2313/04
    • B32B2315/02Ceramics
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32Ceramic
    • C04B2237/34Oxidic
    • C04B2237/341Silica or silicates
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/52Pre-treatment of the joining surfaces, e.g. cleaning, machining

Definitions

  • This invention relates to direct bonding. More particularly, the invention
  • Bonding without the assistance of polymeric adhesives is a technology of interest for
  • Optical wringing refers to a process of bonding glass surfaces in which
  • adsorbed surface groups are removed from active bonds on a surface by heating the parts to
  • fiber coatings and fiber array systems that utilize polymeric adhesives to bond the
  • Vacuum bonding involves bringing two clean surfaces into contact in a high
  • Fusion bonding refers to the process of cleaning two surfaces (glass or metal),
  • a welded interface One example of a fusion bonding process is fusion splicing of optical
  • temperature materials such as adhesives and polymer coatings (e.g., fiber coatings).
  • Adhesive bonding is a common process for mounting of fibers in ferules and
  • UV curable UV curable, and allow for alignment of components between application of the adhesive and
  • bonded part is exposed to thermal cycling. Another issue is signal loss from transmission through the adhesive when the adhesive is used in the optical path of optical systems.
  • Actuators, V. 83, pp. 136-141, 2000 discloses low-temperature bonding of fused SiO 2 by first
  • the invention relates to methods of bonding opposing surfaces of silicon-
  • the invention may further find
  • the method includes providing
  • the opposing surfaces can be maintained at a temperature below about 300° C, preferably
  • the step of providing is a step of providing
  • high pH means a solution having a pH of about 8
  • Suitable high pH solutions include hydroxide-based solutions such as potassium
  • the method may further include cleaning the opposing surfaces with a detergent
  • surfaces may also be ground and polished prior to contacting the surfaces. According to this embodiment, it may be desirable to provide a bonding surface having a flatness less than 1
  • the pH of the high pH solution is
  • Suitable acids for this step may include
  • the opposing surfaces are rinsed with water and placed in contact without drying
  • the method of the present invention is suitable for bonding a wide variety of
  • silica-containing, glass and oxide-based surfaces For example, the method could be used to
  • photonic components lenses, ferrules, optical fiber waveguides, and combinations of these
  • the invention may be utilized to bond two or more optical fibers
  • waveguide fiber preforms together to provide for an enlarged fiber preform and continuous
  • the invention may also be utilized to bond at least two glass tubes
  • the bonding method may be used to
  • the invention provides a simple, low temperature, and inexpensive bonding
  • Bonding can occur at temperatures lower than
  • FIG. 1 is a diagram of termination groups on the surface of a silica-containing
  • FIG. 2a is a diagram of adsorbed water molecules and hydroxyl groups on
  • FIG. 2b is a diagram of termination groups on the surfaces shown in FIG. 2a after
  • FIG. 2c is a diagram of termination groups on the surfaces shown in FIGS. 2a and
  • FIG. 3 is flow chart of process steps according to one embodiment of the
  • the present invention relates to methods for bonding silicon containing
  • a surface treatment of a high pH base solution such as potassium hydroxide, sodium hydroxide or ammonium hydroxide is
  • the surfaces are first cleaned using a detergent followed by rinsing with an acid
  • the surfaces are contacted with a high pH solution, rinsed,
  • this temperature can be as
  • polymer typically 150-200° C, usually a maximum of around 250° C, but preferably less than 150° C.
  • a low temperature frit is used to seal and/or adhere components
  • the temperature used for direct bonding may need to
  • sealing must be performed at a low enough temperature (typically less than 100° C)
  • the surfaces are flat, as determined by performing
  • fringes can be acquired according to teclmiques known in the art and interpreted to determine
  • an optical flat or interferometer can be used to evaluate individual
  • interference fringes between two mating surfaces prior to bonding can be used.
  • the bonding process of the present invention consists of machining
  • each surface to be sealed to an appropriate flatness is sealed to an appropriate flatness.
  • Particularly preferred flatness levels are
  • each surface is polished
  • Such surface groups include ⁇ Si-OH, and more
  • the surfaces are assembled without drying. However, in some embodiments it may be acceptable to moderately dry the bonding surfaces
  • vacuum e.g., about 10 "3 millibar to assist in sealing the bonding surfaces without an air gap.
  • a low to moderate load (at least one PSI) is then applied as the surfaces are heated to less
  • silicic acid-like surface groups condense to form a covalently-bonded interface.
  • pH solution e.g. pH greater than about 8, or a pH greater than about 9 causes the surface to
  • silicate species such as, for example, SiO 2 (OH) 2 2" , SiO(OH) 3 " , etc.
  • borosilicate glasses may require additional heating to provide sufficient bond strength for
  • termination groups allow bonding (both hydrogen and covalent) to occur between surface
  • each surface can be
  • acid-like termination groups for silica surfaces is expected to improve bonding performance
  • the bonding surface of an article can be any suitable material. According to the present invention, the bonding surface of an article can be any suitable material.
  • the samples are then cleaned using a detergent, soaked in a strong acid such as
  • nitric acid to remove adsorbed hydrocarbons and dissolved rare-earth contaminants (e.g.,
  • cerium oxide from the polishing step cerium oxide from the polishing step
  • a high pH alkali solution cerium oxide from the polishing step
  • the bond interface is denoted by a lack of interference fringes. If fringes are
  • constituents of the component or package being bonded e.g., presence of low-temperature
  • softening or degrading materials such as adhesives and coatings away from the bond
  • solution pH may create
  • the ammonium hydroxide soak used to hydrate the glass surface has a pH between
  • ammonium hydroxide is a weak base
  • concentration of KOH is typically used to clean laboratory glassware. This solution is
  • a pH such as 12-
  • solubility reaction proceeds at a much slower rate than for a pH 14 solution.
  • the nitric acid solution has a pH near 0, and will preferentially etch
  • ammonium hydroxide solution for 60 minutes. The samples were rinsed again, and the
  • the bars were bonded together in the shape of a cross ("+"), and an Instron-type,
  • the measured force was an indication of the bond strength. If the
  • PolarcorTM is a borosilicate glass. A proprietary polarization process makes the outer
  • Polarcor bars were bonded together at a bonding temperature of about 200° C.

Abstract

Methods of bonding glass and silicon-containing articles are disclosed. Bonding is achieved without use of adhesives or high temperature fusion. A wide variety of glass and silicon-containing articles may be bonded by the methods of the invention.

Description

DIRECT BONDING OF ARTICLES CONTAINING SILICON
CROSS REFERENCE TO RELATED APPLICATIONS
This application claims the benefit of priority under 35 U.S. C. § 119(a) of U.S.
Application Serial No. 10/035,564 filed on October 26, 2001.
This application also claims the benefit of priority of continuation-in-part
having U.S. Patent Application Serial No. 10/255,926 filed on September 25, 2002.
FIELD OF THE INVENTION
[0001] This invention relates to direct bonding. More particularly, the invention
relates to methods for direct bonding of a wide variety of articles and objects and devices
produced by such methods.
BACKGROUND OF THE INVENTION
[0002 ] Various methods exist for bonding glass surfaces together. These methods
include, for example, wringing, fusion bonding, adhesive bonding and vacuum bonding.
Bonding without the assistance of polymeric adhesives is a technology of interest for
numerous industries including microelectronics and photonics. Adhesives are sensitive to
thermal treatments and can fail from cycling in relatively moderate thermal environments
(e.g., 0-200 °C). On the other hand, the formation of a direct bond between two glass or
metal surfaces allows for an impermeable seal that has the same inherent physical properties
as the bulk material surfaces being bonded. For bonding of dissimilar materials, the resulting
bond is sensitive only to CTE mismatches between materials, as compared to polymeric
adhesives that typically have a CTE substantially different than at least one of the bulk
substrates. [0003 ] Optical wringing refers to a process of bonding glass surfaces in which
adsorbed surface groups are removed from active bonds on a surface by heating the parts to
temperatures typically above 600° C but below the softening point of the glass. Adsorbed
water and organics will vaporize and the results surface sites become "active." At such a
temperature or after cooling in a clean, low humidity environment, surfaces can be placed in
contact at which point covalent bonds spontaneously form between "active" bonds on each
surface. This is similar to vacuum bonding, except the surface is activated by temperature
rather than by a strong vacuum. A disadvantage of this process is the effect of high
temperatures on polymers that may be associated with the glass article to be bonded, for
example, fiber coatings and fiber array systems that utilize polymeric adhesives to bond the
fiber array together.
[0004] Vacuum bonding involves bringing two clean surfaces into contact in a high
vacuum, thus forming a bond. Provided that the surfaces are flat and clean, a high vacuum
removes adsorbed water and hydrocarbons from the surface while preventing the adsorption
of such species. Surfaces can be cleaved in the vacuum, processed and cleaned before being
placed in the vacuum, or cleaned in the vacuum via ion milling or other plasma techniques.
One disadvantage of this process is the effect of a high vacuum on polymers that may be
associated with the glass article to be bonded, for example, fiber coatings and fiber array
systems that utilize polymeric adhesives to bond the fiber array together. High vacuum
pressure may have a negative effect on these polymers.
[0005] Within the microelectronics field, vacuum bonding has been developed for
sealing of such materials as single crystal silicon, thermal oxide SiO2 grown on Si, and
various metals, as described in United States patent number 6,153,495. Coefficient of thermal expansions (CTE) mismatch between materials is not an issue because the process
can be applied at room temperature.
[0006] Fusion bonding refers to the process of cleaning two surfaces (glass or metal),
bringing the surfaces into contact, and heating close to the softening point of the materials
being bonded (to the lower softening temperature for two dissimilar materials), thus forming
a welded interface. One example of a fusion bonding process is fusion splicing of optical
fibers. Advantages of fusion bonding include the fact that commercial systems exist for
splicing of fibers and that the process is relatively easy to apply to bulk geometries. One
disadvantage of fusion bonding is that this process typically results in deformation ofthe two
surfaces being bonded due to the flow of softened material, the inability to use this process
for complex geometries where adhesives or other low-temperature materials are used, and
loss of signal transmitted through the interface when fusion bonding is used for signal
transmitting objects such as optical fibers. Furthermore, for bonding of large surfaces, it is
difficult to limit glass softening to the bonding interface. As a result, the entire seal can lose
dimensional tolerances. In addition, the high temperature ranges required to fusion bond
many glass materials are disadvantageous for complex systems that include the use of low-
temperature materials such as adhesives and polymer coatings (e.g., fiber coatings).
[0007] Adhesive bonding is a common process for mounting of fibers in ferules and
for bonding of photonic components such as filters, polarizers, rotators, etc. to each other and
into packages. Some advantages of using such adhesive are that they are readily available,
UV curable, and allow for alignment of components between application of the adhesive and
curing into permanent position. Disadvantages of adhesive bonding include CTE mismatch
especially for low CTE materials such as high purity fused silica, for applications where the
bonded part is exposed to thermal cycling. Another issue is signal loss from transmission through the adhesive when the adhesive is used in the optical path of optical systems.
Although it is possible to utilize an index matching adhesive that has a refractive index
matching the optical component, it is extremely difficult to utilize an adhesive that has a CTE
and refractive index that matches the optical components. In addition, there are concerns
over long-term reliability of packages that incorporate adhesives. Furthermore, bonding of
components with adhesives can require angle polishing (typically 8°) and associated
assembly to prevent back-reflection.
[0008] Another type of bonding process involves chemical bonding. The formation
of a chemical bond between two glass or metal surfaces allows for an impermeable seal that
has the same inherent physical properties as the bulk material being bonded. In literature,
low-temperature bonding technology has been reported for bonding soda-lime-silicate glass
and for crystalline quartz (see, e.g., A. Sayah, D. Solignac, T. Cueni, "Development of novel
low temperature bonding technologies for microchip chemical analysis applications,"
Sensors and Actuators, 84 (2000) pp. 103-108 and P. Rangsten, O. Vallin, K. Hermansson,
Y. Backlund, "Quartz-to-Quartz Direct bonding," J. Electrochemical Society, V. 146, N. 3,
pp. 1104-1105, 1999). Both the Sayah and Rangsten references disclose using acid to contact
the bonding surfaces. Another article, H. Nakanishi, T. Nishimoto, M. Kani, T. Saitoh, R.
Nakamura, T. Yoshida, S. Shoji, "Condition Optimization, Reliability Evaluation of SiO2-
SiO2 HF Bonding and Its Application for UV Detection Micro Flow Cell," Sensors and
Actuators, V. 83, pp. 136-141, 2000, discloses low-temperature bonding of fused SiO2 by first
contacting the bonding surfaces with hydrofluoric acid. While these bonding processes are
useful in certain applications, the bond strength provided by contacting with acidic solutions
is limited and could be improved. [0009] It would be desirable to provide a bonding process that does not have the
disadvantages of fusion bonding, adhesive bonding, and wringing, and offers more reliable
seal integrity than low pH chemical bonding. In addition, it would be useful to provide a
bonding process that was durable, provided high bond strength and could be used on a wide
variety of silicon-containing materials and surfaces.
SUMMARY OF INVENTION
[00010] The invention relates to methods of bonding opposing surfaces of silicon-
containing articles, such as glass articles containing silica. The invention may further find
use in bonding a wide variety of silicon containing materials such as single crystal silicon and
crystalline quartz. According to one embodiment of the invention a method of bonding
opposing surfaces of silicon-containing articles is provided. The method includes providing
reactive termination groups on the opposing surfaces of the articles and placing the opposing
surfaces in contact. According to another embodiment of the invention, the temperature of
the opposing surfaces can be maintained at a temperature below about 300° C, preferably
below about 200° C during the contacting step, resulting in high bond strength and seal
integrity.
[00011] According to another embodiment of the invention, the step of providing
functional groups includes contacting opposing surfaces of the articles to be bonded with a
high pH solution. As used herein, the term high pH means a solution having a pH of about 8
to about 13. Suitable high pH solutions include hydroxide-based solutions such as potassium
hydroxide, sodium hydroxide and ammonium hydroxide. In another embodiment of the
invention, the method may further include cleaning the opposing surfaces with a detergent
and contacting the opposing surfaces with an acid. In still another embodiment, the opposing
surfaces may also be ground and polished prior to contacting the surfaces. According to this embodiment, it may be desirable to provide a bonding surface having a flatness less than 1
micron and a roughness of less than 2.0 nm RMS, preferably less than 1.5 nm RMS.
[00012] In a preferred embodiment of the invention, the pH of the high pH solution is
greater than 8, but less than 14. In a highly preferred embodiment ofthe invention, the step
of contacting the opposing surfaces with the high pH solution is performed after the step of
contacting the opposing surfaces with the acid. Suitable acids for this step may include
hydrochloric acid, nitric acid and sulfuric acid. According to still another embodiment ofthe
invention, the opposing surfaces are rinsed with water and placed in contact without drying
the opposing surfaces. In a preferred embodiment, pressure of at least one pound per square
inch, more preferably, at least two pounds per square inch, is applied to the opposing surfaces
during the step of contacting the opposing surfaces. In another embodiment, it may be
desirable to dry the surfaces to remove adsorbed water molecules and hydroxyl groups and to
draw a slight vacuum, for example, about 10"3 millibar, to assist in the prevention of an air
gap between the surfaces.
[00013] The method of the present invention is suitable for bonding a wide variety of
silica-containing, glass and oxide-based surfaces. For example, the method could be used to
bond waveguides, optical waveguide preforms, microlens arrays, optical fiber arrays,
photonic components, lenses, ferrules, optical fiber waveguides, and combinations of these
articles. For example, the invention may be utilized to bond two or more optical fiber
waveguide fiber preforms together to provide for an enlarged fiber preform and continuous
fiber drawing process. The invention may also be utilized to bond at least two glass tubes
together that can be drawn into a dual fiber ferrule. The bonding method may be used to
bond glass or silica-containing fibers with ferrules. The invention may also be used in the
manufacture of optical fiber and lens arrays. [00014] The invention provides a simple, low temperature, and inexpensive bonding
method that provides a high bond strength. Bonding can occur at temperatures lower than
300° C, and in some cases lower than 100° C. The resulting seal is complete, impermeable
and does not include an air gap. Additional advantages of the invention will be set forth in
the following detailed description. It is to be understood that both the foregoing general
description and the following detailed description are exemplary and are intended to provide
further explanation ofthe invention as claimed.
BRIEF DESCRIPTION OF THE DRAWINGS
[00015] FIG. 1 is a diagram of termination groups on the surface of a silica-containing
article;
[00016] FIG. 2a is a diagram of adsorbed water molecules and hydroxyl groups on
opposing surfaces after being brought into contact at room temperature;
[00017] FIG. 2b is a diagram of termination groups on the surfaces shown in FIG. 2a after
the surfaces have been heated to drive off adsorbed water molecules and hydroxyl groups;
[00018] FIG. 2c is a diagram of termination groups on the surfaces shown in FIGS. 2a and
2b after the adsorbed hydroxyl groups have been removed; and
[00019] FIG. 3 is flow chart of process steps according to one embodiment of the
invention.
DETAILED DESCRIPTION
[00020] The present invention relates to methods for bonding silicon containing
articles. According to one embodiment of the invention, functional groups are provided on
opposing surfaces of the articles to be bonded. No adhesives, high temperature treatment or
caustic hydrofluoric acid or hydrogen peroxide treatments are required prior to bonding the
opposing surfaces. In one embodiment of the mvention, a surface treatment of a high pH base solution such as potassium hydroxide, sodium hydroxide or ammonium hydroxide is
utilized to provide functional groups on the bonding surfaces of the articles. In a preferred
embodiment, the surfaces are first cleaned using a detergent followed by rinsing with an acid
solution such as a nitric acid solution to remove particulate contamination and soluble heavy
metals respectively.
[00021] Surprisingly, it was found that cleaning and low pH treatment alone did not
result in complete bonds that could be repeatably produced. In several trials, only a portion
of interfaces between articles successfully bonded. However, repeatable and complete bonds
could be provided by contacting the bonding surfaces with a high pH solution. According to
one embodiment of the invention, the surfaces are contacted with a high pH solution, rinsed,
pressed into contact and gradually heated to the desired temperature. The actual temperature
will depend on a variety of factors, including, but not limited to the materials bonded, CTE
mismatch between materials and the presence of polymers. The temperature treatment must
be high enough and for a time sufficient to drive off the adsorbed water molecules and
hydroxyl groups at the bonding interface to allow for the formation of chemical bonds. This
can be done at any temperature below the softening point ofthe glass while preventing loss of
geometrical tolerances. For example, for high purity fused silica, this temperature can be as
high as approximately 1000° C, for Pyrex®, as high as about 650° C, for Polarcor® (a
polarizing glass available from the assignee of the present invention), as high as about 500°
C. For applications where the system includes materials such as polymeric adhesives and
coatings outside ofthe bonding area (for example, the mounting of fibers in a fiber array), the
required temperature is below that which promotes degradation or embrittlement of the
polymer (typically 150-200° C, usually a maximum of around 250° C, but preferably less than 150° C). In cases where a low temperature frit is used to seal and/or adhere components
away from the directly bonded surfaces, the temperature used for direct bonding may need to
be lower, and will depend upon the melting temperature ofthe frit.
[00022 ] For applications that include sealing materials with significantly different CTE
values, sealing must be performed at a low enough temperature (typically less than 100° C)
such that the sealed part will not exhibit high stress when cooled to room temperature. To
enhance bonding, it is highly preferred that the surfaces are flat, as determined by performing
a preliminary cleaning and pressing ofthe dried samples into contact. Resulting interference
fringes can be acquired according to teclmiques known in the art and interpreted to determine
matching flatness. Also, an optical flat or interferometer can be used to evaluate individual
surface flatness. Also, interference fringes between two mating surfaces prior to bonding can
be used to observe and measure conforming flatness.
[00023] Preferably, the bonding process of the present invention consists of machining
each surface to be sealed to an appropriate flatness. Particularly preferred flatness levels are
less than about 1 micron and roughness levels of less than about 2.0 nm RMS, preferably less
than about 1.5 nm RMS. In general, it is desirable to have less than about 1 micron of
conformation between the bonding surfaces, however, less conformance is acceptable if a
higher amount of pressure is applied to the bonding surfaces. After polishing, each surface is
preferably cleaned with an appropriate cleaning solution such as a detergent, soaked in a low
pH acidic solution, and soaked in a high pH basic solution to generate a clean surface with
silicic acid-like terminated surface groups. Such surface groups include ≡Si-OH, and more
reactive groups including =Si-(OH)2, -Si-(OH)3 and -O-Si-(OH)3). In preferred embodiments,
=Si-(OH)2, -Si-(OH)3 and -O-Si-(OH)3) account for the majority of the terminated surface
groups. In certain preferred embodiments, the surfaces are assembled without drying. However, in some embodiments it may be acceptable to moderately dry the bonding surfaces
to remove adsorbed water molecules and hydroxyl groups, especially when using a low
vacuum (e.g., about 10"3 millibar) to assist in sealing the bonding surfaces without an air gap.
A low to moderate load (at least one PSI) is then applied as the surfaces are heated to less
than 300° C, for example, between 100° C and 200° C, so that adsorbed water evaporates and
silicic acid-like surface groups condense to form a covalently-bonded interface.
[00024] According to one embodiment of the invention, as noted above, it is desirable
to provide a bonding surface that is flat. Under nominal load, relatively thin parts (1-2 mm)
will elastically deform to increase contact area between non-flat surfaces, however such seals
result in low failure strength due to flexure of the thin parts during mechanical testing. An
issue for bonding thin parts under a nominal load is that thin parts may be stressed within the
interface after bonding and subsequent removal of an applied load. Therefore, for thin parts,
it is desirable to maximize flatness and provide parts having uniform thickness to maximize
contact area without the need for applied load. It is preferred to have surfaces finished to 1
micron flatness or better on the surfaces to be bonded.
[00025] Contacting a clean, hydroxyl-terminated silicon-containing surface in a high
pH solution (e.g. pH greater than about 8, or a pH greater than about 9) causes the surface to
slowly dissolve, forming silicate species, such as, for example, SiO2(OH)2 2", SiO(OH)3 ", etc.
in solution. Likewise, the active sites on the reacting surface are terminated by similar ≡Si-O"
, =Si-(O")2, -Si-(O")3, and -O-Si-(O")3 groups. By lowering the pH ofthe system (e.g., rinsing
in pH neutral Dl-water), the surface termination groups convert to ≡Si-OH, =Si-(OH)2,-Si-
(OH)3, and -O-Si-(OH)3 termination groups (i.e., silicic acid-like surface groups, see Figure 1
for graphical representation). Preferably, a majority of the termination include =Si-(OH)2 ,—
Si-(OH)3, and -O-Si-(OH)3. [00026] After surfaces with Si-O-H termination groups are generated, water molecules
spontaneously adsorb from an aqueous solution onto the silicic acid-like termination groups.
When two such surfaces are brought into contact, these adsorbed water molecules and
hydroxyl groups form similar bonds to both surfaces, thus acting to bridge the surfaces with
hydrogen bonds, as shown in Fig. 2a. With moderate heating, the adsorbed water molecules
are driven off and hydroxyl groups, and hydrogen bonding exists between the silicic acid-like
termination groups on each surface (see Figure 2b). With further, higher temperature heating
these silicic acid-like surface termination groups condense to form covalent bonds between
the two surfaces (e.g.,≡Si-O-Si≡), with water as a byproduct (Figure 2c).
[00027] For silicon-containing surfaces having a high percentage of silica, higher
temperature heating is not necessarily required to form high strength bonds. For silica
systems containing a greater amount of silica, heating below 300° C as part of the sealing
process is usually sufficient to form a high strength bond. On the other hand, samples that
have a lower amount of silica in the glass composition may require heating to higher
temperatures to form a satisfactory bond. For example, Pyrex® glass (containing
approximately 81% silica) and Polarcor™ (containing approximately 56% silica), which are
borosilicate glasses may require additional heating to provide sufficient bond strength for
applications requiring high bond strength. The degree of heating for different bonding
surfaces and glass surfaces will depend in part on the type of surface to be bonded (e.g., a
fiber or a flat surface) and the desired bond strength for a particular application. As noted
above, in systems that include polymeric materials, such as optical fiber waveguides, it is
undesirable to heat the surfaces to the point where the polymeric material is damaged.
[00028] Compared with bonding systems that utilize only a low pH treatment and rely
on hydroxyl terminated surface group consisting only of ≡Si-OH, it is believed the present invention provides more robust bonding between silicon-containing articles for several
reasons. While not wishing to be bound by theory, it is believed that larger silicic acid-like
termination groups allow bonding (both hydrogen and covalent) to occur between surface
groups that extend further away from the surface. Larger surface terminated groups such as
=Si-(OH)2, -Si-(OH)3, and -O-Si-(OH)3 extend further from the surface than ≡Si-OH, and
these larger groups are more susceptible to steric movement which promotes better bonding
between surfaces including these larger groups. Additionally, each surface can be
considerably rougher and still generate bonding due to the length in which the =Si-(OH)2, -Si-
(OH)3, and -O-Si-(OH)3 termination groups extend from the surface. Although termination
groups specific to bulk surfaces being bonded can be formed for a variety of glass formers
(e.g., SiO2, B2O3) and intermediates (e.g., Al2O3), application to sealing of glass compositions
that have significantly higher alkali and alkaline earth concentrations is expected to be
difficult. For these types of glass compositions, high pH treatment to form surface
termination groups specific to each constituent that extend from the surface (similar to silicic
acid-like termination groups for silica surfaces) is expected to improve bonding performance
between the surfaces.
[00029] Silicic acid-like termination groups are also more reactive than only ≡Si-OH
groups. In addition, the process of removing adsorbed water molecules and hydroxyl groups
to promote hydrogen bonding between ≡Si-OH and the more reactive =Si-(OH)2, -Si-(OH)3,
and -O-Si-(OH)3 surface groups and condensation of said groups can occur at lower
temperatures (i.e., below 100 °C) or in shorter time periods at equivalent temperatures
compared to hydroxyl-terminated surfaces sites. It is also believed that this process can be applied at lower pressures to attain equivalent or superior strengths compared to low pH
bonding procedures that have been found to require higher pressure.
[00030] A flow chart of the process steps of one embodiment of the invention are
shown in Fig. 3. According to the present invention, the bonding surface of an article can be
provided by grinding the bonding surface flat, lapping to remove grinding damage while
maintaining flatness, and polishing to produce an optically clear surface without subsurface
damage. The samples are then cleaned using a detergent, soaked in a strong acid such as
nitric acid to remove adsorbed hydrocarbons and dissolved rare-earth contaminants (e.g.,
cerium oxide from the polishing step), and finally contacted with a high pH alkali solution
such as ammonium hydroxide. The surfaces are then brought into contact and gradually
heated to approximately 200°C for an extended period of time before cooling and inspecting
the seal. The bond interface is denoted by a lack of interference fringes. If fringes are
observed, they will appear around the bonded area, indicating surface separation due to non¬
conformity ofthe surfaces.
[00031] As noted above, for certain glass compositions, it may be desirable for
additional heat treatment or annealing after placing the surfaces in contact. Whether or not an
annealing treatment is possible or practical depends on the presence of low temperature
constituents of the component or package being bonded (e.g., presence of low-temperature
softening or degrading materials such as adhesives and coatings away from the bond
interface). It must also be considered that excessive heating of certain materials may result in
a loss of dimensional tolerances.
[00032] Another factor to consider during bonding of glass surfaces is the solubility
behavior of the glass being prepared for bonding. During cleaning, solution pH may create
heterogeneous etching rates between the various glass constituents. This can lead to loss of surface quality in terms of increased roughness or generation of a pitted surface. For
example, the ammonium hydroxide soak used to hydrate the glass surface has a pH between
12-13. This is high enough to cause silica in a glass surface to slowly dissolve. Extended
soaking time can lead to a roughening ofthe surface if other constituents ofthe glass dissolve
either faster or slower. Other suitable high pH solutions include hydroxide-based solutions
such as potassium hydroxide and sodium hydroxide. Ammonium hydroxide is a weak base,
and a highly concentrated solution of ammonium hydroxide will not exceed pH of
approximately 13. Comparatively, sodium and potassium hydroxides are strong bases and
can easily exceed pH 14, with 1M concentration for a strong base = pH 14. A I M
concentration of KOH is typically used to clean laboratory glassware. This solution is
effective in removing contaminants by dissolving the glass surface around and under the
contaminant and thus allowing the contaminant to disperse in solution. This level of highly
concentrated solution results in an aggressive attack of a glass surface with a high dissolution
rate, and thus may not be desirable for the present invention. Alternatively, a pH such as 12-
13 will thermodynamically allow for solubility of a glass surface, however, kinetically this
solubility reaction proceeds at a much slower rate than for a pH 14 solution.
[00033] Likewise, the nitric acid solution has a pH near 0, and will preferentially etch
lead from a lead-silicate glass. Thus, modification ofthe cleaning protocol might be required
in terms of soak time and acid and/or alkali concentration for complex glass compositions,
and these modifications can be determined by experimentation for various types of glasses.
[00034] Without intending to limit the invention in any manner, the present invention
will be more fully described by the following examples. EXAMPLES
Sample Preparation
All samples in the examples below had geometries of 2 X lA X V* inches. Samples
were prepared by cutting each sample to size plus an additional 0.051" in each direction. The
samples were ground and polished by first grinding 0.040" from each of the four side edges
of the sample to provide a parallel and flat sample. Thereafter, a 7 micron alumina abrasive
was used to lap 0.010" from each of the side edges. Next, all twelve edges of each sample
were chamfered. The faces were then polished with a ceria abrasive (Hastelite grade 919 or
PO) with a polyurethane pad, which removed less than about 0.001" of material. The
surfaces were inspected for surface roughness and flatness.
After a polished surface was obtained, the samples were chemically treated as shown
in Fig. 3. A detergent such as Microclean CA05 was used to clean the samples, and after a
water rinse, the sample was soaked in 10 volume % nitric acid for one hour. The acid-soaked
samples were rinsed again with water, and then the samples were soaked in a 15 volume %
ammonium hydroxide solution for 60 minutes. The samples were rinsed again, and the
bonding surfaces were maintained in a wet condition and bonded under a pressure greater
than about one pound per square inch and at a temperature noted above. In some instances,
samples were further treated by annealing, which is noted in the examples below.
The bars were bonded together in the shape of a cross ("+"), and an Instron-type,
computer controlled mechanical testing unit force measuring device was used to measure the
force to either break the bond between the bars or the sample. Pressure was applied in an
upward direction on the top bar and in a downward direction on the bottom bar. If the bars
separated or delaminated, the measured force was an indication of the bond strength. If the
bars broke, the source of failure in every case was observed to be a flaw of critical size away from the interface, and this was an indication that the bond strength was greater than the
breaking strength ofthe sample.
Example 1
Bonding of High Purity Fused Silica Surfaces
Corning product code 7980 HPFS® bars were bound and the bonding between the
bars at a temperature of 200° C was strong enough so that one ofthe bars failed at 160.9 psi.
Example 2
Bonding of Polarcor™ Surfaces
Polarcor™ is a borosilicate glass. A proprietary polarization process makes the outer
surfaces act as polarizers. Active polarization occurs in the outer 20 - 50 microns of the glass
surface. Polarcor bars were bonded together at a bonding temperature of about 200° C. A
first set of samples resulted in the bond between the bars delaminating at 45.8 psi. A second
set of samples was annealed to about 500° C, and these bars failed in tension at 127.9 psi.
[00035] It will be apparent to those skilled in the art that various modifications and
variations can be made to the present invention without departing from the spirit or scope of
the invention. Thus, it is intended that the present invention cover modifications and
variations of this invention provided they come within the scope of the appended claims and
their equivalents.

Claims

What is claimed is:
1. A method of bonding opposing surfaces of at least two silicon-
containing articles comprising:
providing termination groups selected from the group including =Si-(OH)2, -
Si-(OH)3, and -O-Si-(OH)3, and combinations thereof on the opposing surfaces and placing
the opposing surfaces in contact.
2. The method of claim 1, wherein the temperature of the opposing
surfaces is maintained at a temperature below 200° C during the contacting step.
3. The method of claim 3, further comprising the following steps:
grinding and polishing the opposing surfaces;
cleaning the opposing surfaces with a detergent;
contacting the opposing surfaces with an acid, wherein the acid includes nitric acid;
and,
contacting opposing surfaces of the articles to be bonded with a solution having high
pH greater than 8
4. The method of claim 4, wherein the high pH solution contains a
reagent selected from the group consisting of ammonium hydroxide, potassium hydroxide
and sodium hydroxide.
5. The method of claim 3, further including a step of applying pressure of
at least one pound per square inch during the step of contacting the opposing surfaces.
6. The method of claim 3, further including a step of drying the surfaces
to remove adsorbed water molecules and hydroxyl groups from the surface and utilizing a
low vacuum pressure to prevent an air gap between the surfaces.
7. A method of directly bonding two opposing silicon-containing
surfaces, comprising:
polishing the opposing surfaces;
contacting the opposing surfaces with a detergent;
contacting the opposing surfaces with an aqueous rinse solution;
contacting the opposing surfaces with an acidic solution;
contacting the opposing surfaces with a solution having a pH greater than 8;
and
placing the opposing surfaces in contact.
8. The method of claim 7, further comprising heating the opposing
surfaces to a temperature less than 200° C during the step of placing the opposing surfaces in
contact.
9. The method of claim 7, further comprising a step of applying pressure
of at least one pound per square inch during the step of placing the opposing surfaces in
contact.
10. The method of claim 7, wherein the acidic solution includes nitric acid.
11. The method of claim 7, wherein the solution having a pH greater than 8
includes ammonium hydroxide, potassium hydroxide or sodium hydroxide.
12. The method of claim 16, further including a step of providing
termination groups selected from the group consisting of =Si-(OH)2, -Si-(OH)3, and -O-Si-
(OH)3, and combinations thereof on the opposing surfaces and placing the opposing surfaces
in contact.
PCT/US2002/033208 2001-10-26 2002-10-17 Direct bonding of articles containing silicon WO2003038881A1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/035,564 2001-10-26
US10/035,564 US6814833B2 (en) 2001-10-26 2001-10-26 Direct bonding of articles containing silicon
US10/255,926 US6949164B2 (en) 2001-10-26 2002-09-25 Direct bonding of articles containing silicon
US10/255,926 2002-09-25

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006111185A1 (en) * 2005-04-16 2006-10-26 Carl Zeiss Smt Ag Method for connecting two elements and optical component
US7678458B2 (en) 2007-01-24 2010-03-16 Asml Holding N.V. Bonding silicon silicon carbide to glass ceramics

Citations (2)

* Cited by examiner, † Cited by third party
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US5183710A (en) * 1990-08-30 1993-02-02 U-Sus Distributors, Inc. Hydrophobic inorganic materials and process for making same
US5451547A (en) * 1991-08-26 1995-09-19 Nippondenso Co., Ltd. Method of manufacturing semiconductor substrate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5183710A (en) * 1990-08-30 1993-02-02 U-Sus Distributors, Inc. Hydrophobic inorganic materials and process for making same
US5451547A (en) * 1991-08-26 1995-09-19 Nippondenso Co., Ltd. Method of manufacturing semiconductor substrate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006111185A1 (en) * 2005-04-16 2006-10-26 Carl Zeiss Smt Ag Method for connecting two elements and optical component
US7678458B2 (en) 2007-01-24 2010-03-16 Asml Holding N.V. Bonding silicon silicon carbide to glass ceramics
US8168017B2 (en) 2007-01-24 2012-05-01 Asml Holding N.V. Bonding silicon silicon carbide to glass ceramics

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