WO2003032700A1 - Method for manufacturing wiring board - Google Patents

Method for manufacturing wiring board Download PDF

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Publication number
WO2003032700A1
WO2003032700A1 PCT/JP2002/010378 JP0210378W WO03032700A1 WO 2003032700 A1 WO2003032700 A1 WO 2003032700A1 JP 0210378 W JP0210378 W JP 0210378W WO 03032700 A1 WO03032700 A1 WO 03032700A1
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WO
WIPO (PCT)
Prior art keywords
substrate
hole
wiring
forming
wiring board
Prior art date
Application number
PCT/JP2002/010378
Other languages
French (fr)
Japanese (ja)
Inventor
Jun Mizuno
Hirokazu Sanpei
Masazumi Yasuoka
Masayoshi Esashi
Original Assignee
Advantest Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantest Corporation filed Critical Advantest Corporation
Publication of WO2003032700A1 publication Critical patent/WO2003032700A1/en

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Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/11Printed elements for providing electric connections to or between printed circuits
    • H05K1/115Via connections; Lands around holes or via connections
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486Via connections through the substrate with or without pins
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09818Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
    • H05K2201/09827Tapered, e.g. tapered hole, via or groove
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/14Related to the order of processing steps
    • H05K2203/1476Same or similar kind of process performed in phases, e.g. coarse patterning followed by fine patterning

Definitions

  • the present invention relates to a method for manufacturing a wiring board.
  • the present invention relates to a method for manufacturing a wiring board having fine wiring.
  • This application is related to the following Japanese patent application. For those designated countries that are allowed to be incorporated by reference to the literature, the contents described in the following application are incorporated into this application by reference and are incorporated as a part of the description of this application.
  • an object of the present invention is to provide a method for manufacturing a wiring board that can solve the above-mentioned problems. This object is achieved by a combination of features described in the independent claims.
  • the dependent claims define further advantageous embodiments of the present invention. Disclosure of the invention
  • a method of manufacturing a wiring board having a substrate and a wiring member filled in a through portion provided on the substrate A first hole forming step of forming a first hole from the surface of the substrate, the first hole being substantially perpendicular to the surface of the substrate; and a back to front surface of the substrate. Forming a second hole having a cross section smaller toward the bottom so as to penetrate the bottom surface of the first hole, forming a second hole portion for forming a through portion, and connecting a wiring member to the through portion. Forming a wiring member.
  • the first hole forming step includes a step of forming a first hole by etching the substrate by reactive ion etching
  • the second hole forming step includes a step of forming a second hole by sand blast. May be included.
  • the wiring member forming step includes a conductive member bonding step of bonding a conductive member so as to cover one end of the through-hole on the surface of the substrate, and a first wiring configuration on a part of the through-hole by electrolytic plating using the conductive member as an electrode.
  • the conductive member bonding step may include a step of bonding a conductive tape as a conductive member to the surface of the substrate.
  • the wiring member forming step may further include a second wiring constituent member forming step of forming a second wiring constituent member so as to close the other end of the through portion.
  • the second wiring component forming step may include a step of forming a second wiring component by filling the other end of the through hole with a viscous conductive material.
  • the wiring member forming step may include a step of forming a conductive film on the inner wall of the through portion.
  • a method of manufacturing a wiring board having a substrate and a wiring member filled in a through portion provided in the substrate comprising the steps of providing a substrate having a front surface and a back surface. A step of forming a through hole from the front surface to the back surface of the substrate, a step of attaching a conductive tape to cover one end of the through hole on the surface of the substrate, and wiring the through hole by plating using the conductive tape as an electrode. Filling the member.
  • FIG. 1 shows a method for manufacturing a wiring board according to one embodiment of the present invention.
  • FIG. 2 shows an example of the structure of the element package 500. BEST MODE FOR CARRYING OUT THE INVENTION
  • FIG. 1 shows an example of a method for manufacturing a wiring board according to an embodiment of the present invention.
  • a substrate 100 having a front surface 110 and a back surface 112 is prepared. It is desirable that the substrate 100 has an insulating property.
  • the substrate 100 is a glass substrate.
  • a first hole 102 is formed in the surface 110 of the substrate 100.
  • the first hole 102 is preferably formed substantially perpendicular to the surface 110 of the substrate 100.
  • the opening in the surface 110 of the first hole 102 may be circular, rectangular, or polygonal.
  • the first hole 102 is preferably formed by removing the substrate 100 from the front surface 110 to between the front surface 110 and the back surface 112. Les ,.
  • the first hole 1002 forms a resist mask having a predetermined pattern on the surface 110 of the substrate 100, and the substrate 100 is formed by reactive ion etching using the resist mask as a mask. It is formed from the surface 110 by etching, for example, about 10 to 100 ⁇ m. By forming the first hole 102 using reactive ion etching, the first hole 102 can be formed in the substrate 100 with high positional accuracy.
  • a second hole 104 is formed in the substrate 100.
  • the second hole 104 is formed to penetrate the first hole 102, and the first hole 100 is formed.
  • the second and second holes 104 form a penetrating portion 106 penetrating the substrate 100 from the front surface 110 to the rear surface 112 of the substrate 100.
  • the second hole 104 is formed such that the cross section decreases from the back surface 112 of the substrate 100 to the front surface 110. That is, the second hole 104 is formed such that a cross section substantially perpendicular to the back surface 112 of the substrate 100 has a trapezoidal shape.
  • the opening on the back surface 112 of the second hole 104 may be circular, rectangular, or polygonal.
  • the second hole 104 is formed by sandblasting. By using the sand-plast, the second hole 104 can be formed in the substrate 100 in a very short time.
  • the second hole 104 may be formed by, for example, isotropic etching such as a jet etching.
  • the second hole 104 may be formed after forming the first hole 102.
  • the second hole 104 is formed, in another example, after forming the second hole 104 by isotropic etching such as sandblasting or wet etching, for example, reactive ion etching is performed. May form the first hole 102.
  • a conductive film 122 is formed on the inner wall of the through portion 106. It is preferable that the conductive film 122 be formed of a material having high adhesion to the substrate 100.
  • the conductive film 122 is formed by, for example, chromium or titanium or chromium in a direction from the front surface 100 to the back surface 112 of the substrate 100 by a physical vapor deposition method such as a sputtering method or a vapor deposition method. It is formed by scattering a conductive material such as an alloy with gold.
  • a first wiring component 114 is formed on at least a part of the penetrating portion 106.
  • the conductive member 108 is bonded so as to cover one end of the through portion 106 on the surface 110 of the substrate 100.
  • the conductive member 108 is preferably attached to the substrate 100 so as to conduct with the conductive film 122.
  • the conductive member 108 is a conductive tape such as a metal tape.
  • the conductive tape is attached to the surface 110 of the substrate 100 via an adhesive having conductivity. Adhesive material penetrates 1 In the case where the adhesive member is exposed to the inside, a step of removing the adhesive member may be further provided.
  • a first wiring component 114 is formed in a part of the penetrating portion 106.
  • the first wiring constituent member 114 is formed inside the through portion 106 so as to close one end of the through portion 106.
  • the first wiring component 114 may be formed at the same depth as the first hole 102 so as to close one end of the first hole 102, for example.
  • the first wiring component member 114 is formed by electrolytic plating using the conductive member 108 attached to the surface 110 of the substrate 100 as an electrode.
  • the first wiring component 114 is formed of a conductive material such as, for example, nickel metal. In this case, the first wiring component 114 is preferably formed so as to fill the inside of the first hole 102 formed in the surface 110 of the substrate 100.
  • the penetrating portion 106 by forming a wiring member in the penetrating portion 106 so as to cover at least one end of the penetrating portion 106, the penetrating portion 106 can be sealed. Therefore, even when the wiring substrate is used for a micromachine requiring airtightness, such as a microswitch, the airtightness can be sufficiently maintained.
  • a second wiring component 116 is formed in the penetrating portion 106.
  • the second wiring forming member 116 is formed in a space where the first wiring component 114 is not formed in the through portion 106.
  • the second wiring component 1 16 is formed by embedding a material forming the second wiring component 1 16 from the back surface 1 12 of the substrate 100 into the through portion 106 by a thermal embedding method. Formed by
  • the second wiring component 116 is formed on the back surface 112 of the substrate 110 by applying a material for forming the second wiring component 116 to the penetrating portion. It may be embedded in 106.
  • the material is, for example, a conductive paste containing ultrafine particles of gold, silver, palladium or the like having a particle size of about 5 to 100 nanometers.
  • the inner wall of the penetrating portion 106 is preferably subjected to a hydrophilic treatment.
  • the method further includes a step of drying and firing the embedded material after embedding in the through-hole 106 by applying a material for forming the second wiring component member 116.
  • the material is preferably dried to about 80 to 120 ° C.
  • the firing step the dried material is dried to 200 to 400 ° C. It is preferable to bake to a degree.
  • FIG. 1 (g) shows an example of the structure of the element package 500.
  • the element package 500 includes a wiring board 300, a protruding portion 52 2, a lid portion 5 10, and an element 5 40.
  • the wiring substrate 300 includes a substrate 100 and a through portion 106 that penetrates the substrate 100 from the front surface 110 to the back surface 112 of the substrate. It has a wiring member 118 provided so as to close it, and electrodes 524 and 526.
  • the electrodes 524 and 526 are provided on the surface 110 of the substrate 100 and are electrically connected to the wiring members 118 provided on the through portions 106, respectively.
  • the wiring member 118 is electrically connected to the outside of the element package 500.
  • the wiring board 300 is manufactured by the method for manufacturing a wiring board shown in FIG.
  • the protruding portion 522 is provided on the surface 110 of the wiring board 300 so as to surround the region where the through portion 106 is provided.
  • the protruding portion 5222 is formed substantially perpendicular to the wiring board 300 and / or the lid portion 5100. Further, the protruding portion 5222 may be formed obliquely with respect to the wiring substrate 300 and Z or the lid portion 5110. Further, the upper surface of the protruding portion 5222 is formed substantially parallel to the wiring board 300 and / or the lid portion 5100. Further, the upper surface of the protruding portion 52 2 may be formed obliquely with respect to the wiring board 300 and / or the lid 5 10.
  • the lid portion 5100 has silicon layers 502 and 506, and a silicon oxide layer 504 sandwiched between the silicon layers 502 and 506. Further, the lid portion 5 10 is provided on the upper surface of the protruding portion 5 22 so as to form a closed space together with the wiring substrate 3 0 0 and the protruding portion 5 2.
  • the lid 5100 is formed substantially parallel to the wiring board 300. In addition, the lid 5100 may be formed obliquely with respect to the wiring board 300. ⁇
  • the element 540 is, for example, an actuator such as a switch having a bimetal structure, and has a contact point 532, a cantilever 530, and an electrode 534.
  • the element 540 is provided in a closed space formed by the wiring board 300, the protruding part 522, and the lid part 510.
  • the element 540 is electrically connected to the electrode 524 exposed on the surface 110 side of the wiring substrate 300 via the bump 536.
  • the cantilever 530 has, for example, a pi-metal structure and a heater. Then, the bimetal structure is heated by supplying electric power to the heater via bumps 536 electrically connected to the electrodes 534. When the bimetal structure is heated, the cantilever 530 is bent, and the contact 532 provided on the cantilever 530 contacts the electrode 526, so that the electrode 526 is electrically connected. I do.

Abstract

A method for manufacturing a wiring board having a substrate and a wiring member filled in a penetrating section provided in the substrate comprises the substrate preparing step for preparing a substrate (100) having a front face (110) and a rear face (112), the first hole forming step for forming a first hole (102) nearly vertical to the front face (110) of the substrate (100) from the front face (110) of the substrate (100), the second hole forming step for forming a penetrating section (106) by forming a second hole (104) the cross section of which reduces from the rear face (112) to the front face (110) of the substrate (100) so as to penetrate the bottom face of the first hole (102), and the wiring member forming step for forming a wiring member in the penetrating section (106).

Description

明 細 書 配線基板の製造方法 技術分野  Description Wiring board manufacturing method Technical field
本発明は、 配線基板の製造方法に関する。 特に本発明は、 微細な配線を有す る配線基板の製造方法に関する。 また本出願は、 下記の日本特許出願に関連す る。 文献の参照による組み込みが認められる指定国については、 下記の出願に 記載された内容を参照により本出願に組み込み、 本出願の記載の一部とする。  The present invention relates to a method for manufacturing a wiring board. In particular, the present invention relates to a method for manufacturing a wiring board having fine wiring. This application is related to the following Japanese patent application. For those designated countries that are allowed to be incorporated by reference to the literature, the contents described in the following application are incorporated into this application by reference and are incorporated as a part of the description of this application.
特願 2 0 0 1— 3 1 0 7 7 4 出願日 平成 1 3年 1 0月 5日 背景技術  Japanese Patent Application No. 2 0 0 1— 3 1 0 7 7 4 Filing date October 5, 2001 Background technology
基板に設けられた貫通孔、 及び当該貫通孔に設けられた導電部材を有する従来の 配線基板として、 貫通孔にワイヤを挿入した後、 ワイヤと貫通孔との隙間を榭脂等 で封することにより製造された配線基板がある。  As a conventional wiring board having a through-hole provided in a substrate and a conductive member provided in the through-hole, after inserting a wire into the through-hole, sealing a gap between the wire and the through-hole with a resin or the like. There is a wiring board manufactured by the company.
近年のマイクロマシンの微細化に伴い、 例えばマイクロマシンに電力を供給する ための、 微小な導電部材及び /Xは微小ピッチで設けられた導電部材を有する配線 基板の開発が望まれている。  With the miniaturization of micromachines in recent years, for example, there is a demand for the development of wiring boards having fine conductive members for supplying power to the micromachines and conductive members provided with a fine pitch of / X.
しかしながら、 従来の配線基板は、 基板に貫通孔を設け、 当該貫通孔にワイ ャを揷入する必要がある。 ワイヤを貫通孔に揷入するためには、 ワイヤの径に ある程度の太さが必要であるため、 その微細化には限界がある。 そのため配線 基板の微細化は極めて困難な状況となっている。  However, in a conventional wiring board, it is necessary to provide a through hole in the board and insert a wire into the through hole. In order to insert a wire into a through-hole, the diameter of the wire needs to be somewhat large, so there is a limit to miniaturization. For this reason, miniaturization of wiring boards has become extremely difficult.
そこで本発明は、 上記の課題を解決することのできる配線基板の製造方法を 提供することを目的とする。 この目的は請求の範囲における独立項に記載の特 徴の組み合わせにより達成される。 また従属項は本発明の更なる有利な具体例 を規定する。 発明の開示 Therefore, an object of the present invention is to provide a method for manufacturing a wiring board that can solve the above-mentioned problems. This object is achieved by a combination of features described in the independent claims. The dependent claims define further advantageous embodiments of the present invention. Disclosure of the invention
このような目的を達成するために、 本発明の第 1の形態によれば、 基板及ぴ当該 基板に設けられた貫通部に充填された配線部材を有する配線基板の製造方法であつ て、 表面及び裏面を有する基板を用意する基板用意工程と、 基板の表面から、 基板 の表面に対して略垂直な第 1の穴部を基板に形成する第 1穴部形成工程と、 基板の 裏面から表面に向かって断面が小さくなる第 2の穴部を、 第 1の穴部の底面を貫通 するように形成することにより、 貫通部を形成する第 2穴部形成工程と、 貫通部に 配線部材を形成する配線部材形成工程とを備える。  According to a first aspect of the present invention, there is provided a method of manufacturing a wiring board having a substrate and a wiring member filled in a through portion provided on the substrate. A first hole forming step of forming a first hole from the surface of the substrate, the first hole being substantially perpendicular to the surface of the substrate; and a back to front surface of the substrate. Forming a second hole having a cross section smaller toward the bottom so as to penetrate the bottom surface of the first hole, forming a second hole portion for forming a through portion, and connecting a wiring member to the through portion. Forming a wiring member.
第 1穴部形成工程は、 反応性イオンエッチングにより基板をエッチングして第 1 の穴部を形成する工程を含み、 第 2穴部形成工程は、 サンドプラストにより第 2の 穴部を形成する工程を含んでもよい。 配線部材形成工程は、 基板の表面において貫 通部の一端を塞ぐように導電部材を貼り合わせる導電部材貼合工程と、 導電部材を 電極として電解鍍金により貫通部の一部に第 1の配線構成部材を形成する第 1配線 構成部材形成工程とを含んでもよレ、。  The first hole forming step includes a step of forming a first hole by etching the substrate by reactive ion etching, and the second hole forming step includes a step of forming a second hole by sand blast. May be included. The wiring member forming step includes a conductive member bonding step of bonding a conductive member so as to cover one end of the through-hole on the surface of the substrate, and a first wiring configuration on a part of the through-hole by electrolytic plating using the conductive member as an electrode. A first wiring forming member forming step of forming a member.
導電部材貼合工程は、 導電部材として導電性テープを基板の表面に貼付する工程 を含んでもよい。 配線部材形成工程は、 貫通部の他端を塞ぐように第 2の配線構成 部材を形成する第 2配線構成部材形成工程を更に含んでもよい。 第 2配線構成部材 形成工程は、 粘性を有する導電性材料を、 貫通孔の他端に充填することにより、 第 2の配線構成部材を形成する工程を含んでもよい。 配線部材形成工程は、 貫通部の 内壁に導電膜を形成する工程を含んでもよい。  The conductive member bonding step may include a step of bonding a conductive tape as a conductive member to the surface of the substrate. The wiring member forming step may further include a second wiring constituent member forming step of forming a second wiring constituent member so as to close the other end of the through portion. The second wiring component forming step may include a step of forming a second wiring component by filling the other end of the through hole with a viscous conductive material. The wiring member forming step may include a step of forming a conductive film on the inner wall of the through portion.
本発明の第 2の形態によれば、 基板及び当該基板に設けられた貫通部に充填され た配線部材を有する配線基板の製造方法であって、 表面及び裏面を有する基板を用 意する工程と、 基板の表面から裏面に渡って貫通孔を形成する工程と、 基板の表面 において貫通孔の一端を塞ぐように導電性テープを貼付する工程と、 導電性テープ を電極として鍍金により貫通孔に配線部材を充填する工程とを備える。  According to a second aspect of the present invention, there is provided a method of manufacturing a wiring board having a substrate and a wiring member filled in a through portion provided in the substrate, comprising the steps of providing a substrate having a front surface and a back surface. A step of forming a through hole from the front surface to the back surface of the substrate, a step of attaching a conductive tape to cover one end of the through hole on the surface of the substrate, and wiring the through hole by plating using the conductive tape as an electrode. Filling the member.
なお上記の発明の概要は、 本発明の必要な特徴の全てを列挙したものではな く、 これらの特徴群のサブコンビネーションも又発明となり うる。 図面の簡単な説明 The above summary of the present invention does not list all of the necessary features of the present invention, and sub-combinations of these feature groups can also constitute the present invention. BRIEF DESCRIPTION OF THE FIGURES
図 1は、 本発明の一実施形態に係る配線基板の製造方法を示す。  FIG. 1 shows a method for manufacturing a wiring board according to one embodiment of the present invention.
図 2は、 素子パッケージ 5 0 0の構造の一例を示す。 発明を実施するための最良の形態  FIG. 2 shows an example of the structure of the element package 500. BEST MODE FOR CARRYING OUT THE INVENTION
以下、 発明の実施の形態を通じて本発明を説明するが、 以下の実施形態は請 求の範囲に係る発明を限定するものではなく、 又実施形態の中で説明されてい る特徴の組み合わせの全てが発明の解決手段に必須であるとは限らない。 図 1は、 本発明の一実施形態に係る配線基板の製造方法の一例を示す。  Hereinafter, the present invention will be described through embodiments of the present invention. However, the following embodiments do not limit the invention according to the scope of the claims, and all of the combinations of the features described in the embodiments are not limited thereto. It is not always essential to the solution of the invention. FIG. 1 shows an example of a method for manufacturing a wiring board according to an embodiment of the present invention.
まず、 図 1 ( a ) に示すように、 表面 1 1 0及び裏面 1 1 2を有する基板 1 0 0 を用意する。 基板 1 0 0は絶縁性を有することが望ましい。 例えば、 基板 1 0 0は ガラス基板である。  First, as shown in FIG. 1A, a substrate 100 having a front surface 110 and a back surface 112 is prepared. It is desirable that the substrate 100 has an insulating property. For example, the substrate 100 is a glass substrate.
続いて、 図 1 ( b ) に示すように、 基板 1 0 0の表面 1 1 0に第 1の穴部 1 0 2 を形成する。 第 1の穴部 1 0 2は、 基板 1 0 0の表面 1 1 0に対して略垂直に形成 されることが好ましい。 第 1の穴部 1 0 2の表面 1 1 0における開口は円形状であ つてよく、 また矩形形状や多角形状であってもよい。 第 1の穴部 1 0 2は、 表面 1 1 0力 ら、 表面 1 1 0と裏面 1 1 2との間まで、 基板 1 0 0が除去されることによ り形成されることが好ましレ、。 例えば、 第 1の穴部 1 0 2は、 基板 1 0 0の表面 1 1 0に所定のパターンを有するレジストマスクを形成し、 当該レジストマスクをマ スクとして反応性イオンエッチングにより基板 1 0 0を表面 1 1 0から、 例えば 1 0〜1 0 0 u m程度エッチングすることにより形成される。 反応性イオンエツチン グを用いて第 1の穴部 1 0 2を形成することにより、 基板 1 0 0に第 1の穴部 1 0 2を位置精度よく形成することができる。  Subsequently, as shown in FIG. 1B, a first hole 102 is formed in the surface 110 of the substrate 100. The first hole 102 is preferably formed substantially perpendicular to the surface 110 of the substrate 100. The opening in the surface 110 of the first hole 102 may be circular, rectangular, or polygonal. The first hole 102 is preferably formed by removing the substrate 100 from the front surface 110 to between the front surface 110 and the back surface 112. Les ,. For example, the first hole 1002 forms a resist mask having a predetermined pattern on the surface 110 of the substrate 100, and the substrate 100 is formed by reactive ion etching using the resist mask as a mask. It is formed from the surface 110 by etching, for example, about 10 to 100 μm. By forming the first hole 102 using reactive ion etching, the first hole 102 can be formed in the substrate 100 with high positional accuracy.
続いて、 図 1 ( c ) に示すように、 基板 1 0 0に第 2の穴部 1 0 4を形成する。 第 2の穴部 1 0 4は第 1の穴部 1 0 2を貫通するように形成され、 第 1の穴部 1 0 2及ぴ第 2の穴部 1 0 4は、 基板 1 0 0の表面 1 1 0から裏面 1 1 2に渡って当該 基板 1 0 0を貫通する貫通部 1 0 6を形成する。 Subsequently, as shown in FIG. 1 (c), a second hole 104 is formed in the substrate 100. The second hole 104 is formed to penetrate the first hole 102, and the first hole 100 is formed. The second and second holes 104 form a penetrating portion 106 penetrating the substrate 100 from the front surface 110 to the rear surface 112 of the substrate 100.
また、 第 2の穴部 1 0 4は、 基板 1 0 0の裏面 1 1 2から表面 1 1 0に向かって 断面が小さくなるように形成される。 すなわち、 第 2の穴部 1 0 4は、 基板 1 0 0 の裏面 1 1 2に対して略垂直な断面が台形形状を有するように形成される。 また、 第 2の穴部 1 0 4の裏面 1 1 2上における開口は円形状であってよく、 また矩形形 状や多角形状であってもよい。 例えば、 第 2の穴部 1 0 4は、 サンドブラストによ り形成される。 サンドプラストを用いることにより、 極めて短い時間で基板 1 0 0 に第 2の穴部 1 0 4を形成することができる。 また他の例において、 第 2の穴部 1 0 4は、 例えばゥエツトエッチング等の等方性エッチングにより形成されてもよい また本例において、 第 1の穴部 1 0 2を形成した後に第 2の穴部 1 0 4を形成し ているが、 他の例において、 例えばサンドブラストやウエットエッチング等の等方 性エッチングにより第 2の穴部 1 0 4を形成した後に、 例えば反応性イオンエッチ ングにより第 1の穴部 1 0 2を形成してもよい。  The second hole 104 is formed such that the cross section decreases from the back surface 112 of the substrate 100 to the front surface 110. That is, the second hole 104 is formed such that a cross section substantially perpendicular to the back surface 112 of the substrate 100 has a trapezoidal shape. The opening on the back surface 112 of the second hole 104 may be circular, rectangular, or polygonal. For example, the second hole 104 is formed by sandblasting. By using the sand-plast, the second hole 104 can be formed in the substrate 100 in a very short time. In another example, the second hole 104 may be formed by, for example, isotropic etching such as a jet etching. In this example, the second hole 104 may be formed after forming the first hole 102. Although the second hole 104 is formed, in another example, after forming the second hole 104 by isotropic etching such as sandblasting or wet etching, for example, reactive ion etching is performed. May form the first hole 102.
続いて、 図 1 ( d ) に示すように、 貫通部 1 0 6の内壁に導電膜 1 2 2を形成す る。 導電膜 1 2 2は、 基板 1 0 0に対して密着性の高い材料により形成されること が好ましい。 導電膜 1 2 2は、 例えばスパッタリング法や蒸着法等の物理蒸着法に より、 基板 1 0 0の表面 1 0 0から裏面 1 1 2に向かう方向に、 例えばクロムもし くはチタン、 又はクロムと金との合金等の導電材料を飛散させることにより形成さ れる。  Subsequently, as shown in FIG. 1 (d), a conductive film 122 is formed on the inner wall of the through portion 106. It is preferable that the conductive film 122 be formed of a material having high adhesion to the substrate 100. The conductive film 122 is formed by, for example, chromium or titanium or chromium in a direction from the front surface 100 to the back surface 112 of the substrate 100 by a physical vapor deposition method such as a sputtering method or a vapor deposition method. It is formed by scattering a conductive material such as an alloy with gold.
続いて、 図 1 ( e ) に示すように、 貫通部 1 0 6の少なくとも一部に第 1の配線 構成部材 1 1 4を形成する。 まず、 基板 1 0 0の表面 1 1 0において貫通部 1 0 6 の一端を塞ぐように導電部材 1 0 8を貼り合わせる。 この場合、 導電部材 1 0 8は 、 導電膜 1 2 2と導通するように基板 1 0 0に貼付されることが好ましい。 例えば 、 導電部材 1 0 8は金属テープ等の導電性テープである。 導電性テープは導電性を 有する粘着剤を介して基板 1 0 0の表面 1 1 0に貼付される。 粘着部材が貫通部 1 0 6の内部に露出する場合、 粘着部材を除去する工程を更に備えてもよい。 この場 合、 貫通部 1 0 6に露出した粘着部材は例えばエッチングにより除去される。 次に、 貫通部 1 0 6の一部に第 1の配線構成部材 1 1 4を形成する。 第 1の配線 構成部材 1 1 4は、 貫通部 1 0 6の一端を塞ぐように、 貫通部 1 0 6の内部に形成 される。 第 1の配線構成部材 1 1 4は、 例えば第 1の穴部 1 0 2の一端を塞ぐよう に、 第 1の穴部 1 0 2と同じ深さに形成されてもよい。 例えば、 第 1の配線構成部 材 1 1 4は、 基板 1 0 0の表面 1 1 0に貼付された導電部材 1 0 8を電極として、 電解鍍金により形成される。 第 1の配線構成部材 1 1 4は、 例えば-ッケルゃ金等 の導電性材料により形成される。 この場合、 第 1の配線構成部材 1 1 4は、 基板 1 0 0の表面 1 1 0に形成された第 1の穴部 1 0 2の内部を充填するように形成され ることが好ましい。 Subsequently, as shown in FIG. 1E, a first wiring component 114 is formed on at least a part of the penetrating portion 106. First, the conductive member 108 is bonded so as to cover one end of the through portion 106 on the surface 110 of the substrate 100. In this case, the conductive member 108 is preferably attached to the substrate 100 so as to conduct with the conductive film 122. For example, the conductive member 108 is a conductive tape such as a metal tape. The conductive tape is attached to the surface 110 of the substrate 100 via an adhesive having conductivity. Adhesive material penetrates 1 In the case where the adhesive member is exposed to the inside, a step of removing the adhesive member may be further provided. In this case, the adhesive member exposed to the penetrating portion 106 is removed by, for example, etching. Next, a first wiring component 114 is formed in a part of the penetrating portion 106. The first wiring constituent member 114 is formed inside the through portion 106 so as to close one end of the through portion 106. The first wiring component 114 may be formed at the same depth as the first hole 102 so as to close one end of the first hole 102, for example. For example, the first wiring component member 114 is formed by electrolytic plating using the conductive member 108 attached to the surface 110 of the substrate 100 as an electrode. The first wiring component 114 is formed of a conductive material such as, for example, nickel metal. In this case, the first wiring component 114 is preferably formed so as to fill the inside of the first hole 102 formed in the surface 110 of the substrate 100.
本例において、 貫通部 1 0 6の少なくとも一端を塞ぐように、 貫通部 1 0 6に配 線部材を形成することにより、 貫通部 1 0 6を封止することができる。 そのため配 線基板を、 例えばマイクロスィツチ等の気密性を必要とするマイクロマシンに使用 した場合であっても、 十分に気密性を保つことができる。  In this example, by forming a wiring member in the penetrating portion 106 so as to cover at least one end of the penetrating portion 106, the penetrating portion 106 can be sealed. Therefore, even when the wiring substrate is used for a micromachine requiring airtightness, such as a microswitch, the airtightness can be sufficiently maintained.
続いて、 図 1 ( f ) に示すように、 貫通部 1 0 6に第 2の配線構成部材 1 1 6を 形成する。 第 2の配線形成部材 1 1 6は、 貫通部 1 0 6において第 1の配線構成部 材 1 1 4が形成されていない空間に形成される。 例えば、 第 2の配線構成部材 1 1 6は、 第 2の配線構成部材 1 1 6を形成する材料を、 熱埋め込み法により基板 1 0 0の裏面 1 1 2から貫通部 1 0 6に埋め込むことにより形成される。  Subsequently, as shown in FIG. 1 (f), a second wiring component 116 is formed in the penetrating portion 106. The second wiring forming member 116 is formed in a space where the first wiring component 114 is not formed in the through portion 106. For example, the second wiring component 1 16 is formed by embedding a material forming the second wiring component 1 16 from the back surface 1 12 of the substrate 100 into the through portion 106 by a thermal embedding method. Formed by
また他の例において、 第 2の配線構成部材 1 1 6は、 基板 1 0◦の裏面 1 1 2に おいて、 第 2の配線構成部材 1 1 6を形成する材料を塗布することにより貫通部 1 0 6に埋め込んでもよい。 当該材料は、 例えば粒径が 5〜 1 0 0ナノメートル程度 の金、 銀、 パラジウム等の超微粒子を含む導電性ペーストである。 この場合、 貫通 部 1 0 6の内壁を親水化処理することが好ましい。  In another example, the second wiring component 116 is formed on the back surface 112 of the substrate 110 by applying a material for forming the second wiring component 116 to the penetrating portion. It may be embedded in 106. The material is, for example, a conductive paste containing ultrafine particles of gold, silver, palladium or the like having a particle size of about 5 to 100 nanometers. In this case, the inner wall of the penetrating portion 106 is preferably subjected to a hydrophilic treatment.
また、 第 2の配線構成部材 1 1 6を形成する材料を塗布することにより貫通部 1 0 6に埋め込んだ後、 埋め込まれた材料を乾燥及び焼成する工程を更に備えること が望ましい。 この場合、 乾燥する工程は、 当該材料を 8 0〜1 2 0 °C程度に乾燥す るのが好ましく、 また、 焼成する工程は、 乾燥させた当該材料を 2 0 0〜4 0 0 °C 程度に焼成することが好ましい。 In addition, the method further includes a step of drying and firing the embedded material after embedding in the through-hole 106 by applying a material for forming the second wiring component member 116. Is desirable. In this case, in the drying step, the material is preferably dried to about 80 to 120 ° C., and in the firing step, the dried material is dried to 200 to 400 ° C. It is preferable to bake to a degree.
続いて、 図 1 ( g ) に示すように、 基板 1 0 0の裏面 1 1 2から突出した第 2の 配線構成部材 1 1 6を除去する。 第 2の配線構成部材 1 1 6は、 当該第 2の配線構 成部材 1 1 6の表面と、 基板 1 0 0の裏面 1 1 2とが平坦になるように除去される ことが好ましい。 例えば、 基板 1 0 0の裏面 1 1 2を化学的機械研磨 (C h e m i c a 1 M e c h a n i c a l P o 1 i s h ) により研磨することにより、 基板 1 0 0の裏面 1 1 2及ぴ第 2の配線構成部材 1 1 6の表面を平坦化する。 以上のェ 程により、 配線基板 3 0 0を得ることができる。 図 2は、 素子パッケージ 5 0 0の構造の一例を示す。 素子パッケージ 5 0 0は、 配線基板 3 0 0、 突出部 5 2 2、 蓋部 5 1 0、 及び素子 5 4 0を備える。  Subsequently, as shown in FIG. 1 (g), the second wiring component 1 16 protruding from the back surface 112 of the substrate 100 is removed. The second wiring member 116 is preferably removed such that the front surface of the second wiring member 116 and the back surface 112 of the substrate 100 are flat. For example, the back surface 112 of the substrate 100 is polished by chemical mechanical polishing (Chemica 1 Mechanical Po 1 ish), so that the back surface 112 of the substrate 100 and the second wiring component are polished. The surface of 1 16 is flattened. Through the above steps, the wiring substrate 300 can be obtained. FIG. 2 shows an example of the structure of the element package 500. The element package 500 includes a wiring board 300, a protruding portion 52 2, a lid portion 5 10, and an element 5 40.
配線基板 3 0 0は、 基板 1 0 0と、 当該基板の表面 1 1 0から裏面 1 1 2に向か つて基板 1 0 0を貫通する貫通部 1 0 6に、 当該貫通部 1 0 6を塞ぐように設けら れた配線部材 1 1 8と、 電極 5 2 4及ぴ 5 2 6とを有する。 電極 5 2 4及び 5 2 6 は、 基板 1 0 0の表面 1 1 0に設けられ、 それぞれ貫通部 1 0 6に設けられた配線 部材 1 1 8と電気的に接続される。 また、 配線部材 1 1 8は、 素子パッケージ 5 0 0の外部と電気的に接続される。 配線基板 3 0 0は、 図 1に示した配線基板の製造 方法により製造される。  The wiring substrate 300 includes a substrate 100 and a through portion 106 that penetrates the substrate 100 from the front surface 110 to the back surface 112 of the substrate. It has a wiring member 118 provided so as to close it, and electrodes 524 and 526. The electrodes 524 and 526 are provided on the surface 110 of the substrate 100 and are electrically connected to the wiring members 118 provided on the through portions 106, respectively. The wiring member 118 is electrically connected to the outside of the element package 500. The wiring board 300 is manufactured by the method for manufacturing a wiring board shown in FIG.
突出部 5 2 2は、 貫通部 1 0 6が設けられた領域を囲むように、 配線基板 3 0 0 の表面 1 1 0に設けられる。 突出部 5 2 2は、 配線基板 3 0 0及び/又は蓋部 5 1 0に対して略垂直に形成される。 また、 突出部 5 2 2は、 配線基板 3 0 0及ぴ Z又 は蓋部 5 1 0に対して斜めに形成されてもよい。 また、 突出部 5 2 2の上面は、 配 線基板 3 0 0及び/又は蓋部 5 1 0に対して略平行に形成される。 また、 突出部 5 2 2の上面は、 配線基板 3 0 0及び/又は蓋部 5 1 0に対して斜めに形成されても よい。 蓋部 5 1 0は、 シリコン層 5 0 2及ぴ 5 0 6と、 シリコン層 5 0 2及び 5 0 6の 間に挟まれた酸化シリコン層 5 0 4とを有する。 また、 蓋部 5 1 0は、 配線基板 3 0 0及び突出部 5 2 2と共に閉じた空間を形成するように、 突出部 5 2 2の上面に 設けられる。 蓋部 5 1 0は、 配線基板 3 0 0に対して略平行に形成される。 また、 蓋部 5 1 0は、 配線基板 3 0 0に対して斜めに形成されてもよい。 · The protruding portion 522 is provided on the surface 110 of the wiring board 300 so as to surround the region where the through portion 106 is provided. The protruding portion 5222 is formed substantially perpendicular to the wiring board 300 and / or the lid portion 5100. Further, the protruding portion 5222 may be formed obliquely with respect to the wiring substrate 300 and Z or the lid portion 5110. Further, the upper surface of the protruding portion 5222 is formed substantially parallel to the wiring board 300 and / or the lid portion 5100. Further, the upper surface of the protruding portion 52 2 may be formed obliquely with respect to the wiring board 300 and / or the lid 5 10. The lid portion 5100 has silicon layers 502 and 506, and a silicon oxide layer 504 sandwiched between the silicon layers 502 and 506. Further, the lid portion 5 10 is provided on the upper surface of the protruding portion 5 22 so as to form a closed space together with the wiring substrate 3 0 0 and the protruding portion 5 2. The lid 5100 is formed substantially parallel to the wiring board 300. In addition, the lid 5100 may be formed obliquely with respect to the wiring board 300. ·
素子 5 4 0は、 例えばバイメタル構造を有するスィッチ等のァクチユエータであ つて、 接点 5 3 2、 カンチレバー 5 3 0、 及び電極 5 3 4を有する。 素子 5 4 0は、 配線基板 3 0 0、 突出部 5 2 2、 及び蓋部 5 1 0によって形成された、 閉じた空間 に設けられる。 そして、 素子 5 4 0は、 配線基板 3 0 0の表面 1 1 0側に露出する 電極 5 2 4とバンプ 5 3 6を介して電気的に接続される。  The element 540 is, for example, an actuator such as a switch having a bimetal structure, and has a contact point 532, a cantilever 530, and an electrode 534. The element 540 is provided in a closed space formed by the wiring board 300, the protruding part 522, and the lid part 510. The element 540 is electrically connected to the electrode 524 exposed on the surface 110 side of the wiring substrate 300 via the bump 536.
カンチレバー 5 3 0は、 例えばパイメタル構造及ぴヒータを有する。 そして、 電 極 5 3 4に電気的に接続されたバンプ 5 3 6を介して当該ヒータに電力を供給する ことによりバイメタル構造を加熱する。 そして、 バイメタル構造が加熱されること により、 カンチレバー 5 3 0は湾曲し、 当該カンチレバー 5 3 0に設けられた接点 5 3 2が電極 5 2 6に接触することにより、 電極 5 2 6間を導通する。  The cantilever 530 has, for example, a pi-metal structure and a heater. Then, the bimetal structure is heated by supplying electric power to the heater via bumps 536 electrically connected to the electrodes 534. When the bimetal structure is heated, the cantilever 530 is bent, and the contact 532 provided on the cantilever 530 contacts the electrode 526, so that the electrode 526 is electrically connected. I do.
本例によれば、 例えば配線基板 3 0 0の貫通部 1 0 6に設けられた微細な配 線部材 1 1 8を介して、 外部から素子 5 4 0に電力を供給することができるた め、 配線基板 3 0 0の表面 1 1 0に設けられる配線を低減することができる。 したがって、 非常に微細なマイクロマシンを提供することができる。 また、 図 1に示した配線基板の製造方法により製造された配線基板 3 0 0によれば、 配 線基 ¾ 3 0 0、 突出部 5 2 2、 及び蓋部 5 1 0によって形成される空間の気密 性が非常に高い素子パッケージを提供することができる。 以上発明の実施の形態を説明したが、 本出願に係る発明の技術的範囲は上記 の実施の形態に限定されるものではない。 上記実施の形態に種々の変更を加え て、 請求の範囲に記載の発明を実施することができる。 そのような発明が本出 願に係る発明の技術的範囲に属することもまた請求の範囲の記載から明らかで ある。 産業上の利用可能性 According to this example, for example, power can be externally supplied to the element 540 via the fine wiring member 118 provided in the through portion 106 of the wiring board 300. The number of wirings provided on the surface 110 of the wiring board 300 can be reduced. Therefore, a very fine micromachine can be provided. Further, according to the wiring board 300 manufactured by the method for manufacturing a wiring board shown in FIG. An element package having a very high airtightness can be provided. Although the embodiments of the present invention have been described above, the technical scope of the present invention according to the present application is not limited to the above embodiments. The invention described in the claims can be implemented by adding various changes to the above embodiment. It is also clear from the description of the claims that such an invention belongs to the technical scope of the invention of the present application. is there. Industrial applicability
以上の説明から明らかなように、 本発明によれば、 微細な配線を有する配線 基板を提供することができる。  As is clear from the above description, according to the present invention, it is possible to provide a wiring board having fine wiring.

Claims

請 求 の 範 囲 The scope of the claims
1 . 基板及び当該基板に設けられた貫通部に充填された配線部材を有する配線基 板の製造方法であって、 1. A method for manufacturing a wiring board having a substrate and a wiring member filled in a through portion provided in the substrate,
表面及ぴ裏面を有する基板を用意する基板用意工程と、  A substrate preparation step of preparing a substrate having a front surface and a back surface;
前記基板の前記表面から、 前記基板の前記表面に対して略垂直な第 1の穴部を前 記基板に形成する第 1穴部形成工程と、  A first hole forming step of forming a first hole in the substrate from the surface of the substrate, the first hole being substantially perpendicular to the surface of the substrate;
前記基板の前記裏面から前記表面に向かって靳面が小さくなる第 2の穴部を、 前 記第 1の穴部の底面を貫通するように形成することにより、 前記貫通部を形成する 第 2穴部形成工程と、  The second through hole is formed by forming a second hole having a smaller surface from the rear surface toward the front surface of the substrate so as to penetrate the bottom surface of the first hole. A hole forming step;
前記貫通部に前記配線部材を形成する配線部材形成工程と  A wiring member forming step of forming the wiring member in the through portion;
を備えたことを特徴とする配線基板の製造方法。 A method for manufacturing a wiring board, comprising:
2. 前記第 1穴部形成工程は、 反応性イオンエッチングにより前記基板をエッチ ングして前記第 1の穴部を形成する工程を含み、  2. the first hole forming step includes a step of etching the substrate by reactive ion etching to form the first hole;
前記第 2穴部形成工程は、 サンドブラストにより前記第 2の穴部を形成する工程 を含むことを特徴とする請求項 1に記載の配線基板の製造方法。  2. The method according to claim 1, wherein the second hole forming step includes a step of forming the second hole by sandblasting.
3. 前記配線部材形成工程は、  3. The wiring member forming step includes:
前記基板の前記表面において前記貫通部の一端を塞ぐように導電部材を貼り合わ せる導電部材貼合工程と、  A conductive member bonding step of bonding a conductive member so as to close one end of the through portion on the surface of the substrate;
前記導電部材を電極として電解鍍金により前記貫通部の一部に第 1の配線構成部 材を形成する第 1配線構成部材形成工程と  A first wiring component forming step of forming a first wiring component on a part of the penetrating portion by electrolytic plating using the conductive member as an electrode;
を含むことを特徴とする請求項 1に記載の配線基板の製造方法。 2. The method for manufacturing a wiring board according to claim 1, comprising:
4. 前記導電部材貼合工程は、 前記導電部材として導電性テープを前記基板の前 記表面に貼付する工程を含むことを特徴とする請求項 3に記載の配線基板の製造方 法。  4. The method for manufacturing a wiring board according to claim 3, wherein the step of bonding the conductive member includes a step of bonding a conductive tape as the conductive member to the surface of the substrate.
5. 前記配線部材形成工程は、 前記貫通部の他端を塞ぐように第 2の配線構成部 材を形成する第 2配線構成部材形成工程を更に含むことを特徴とする請求項 3に記 載の配線基板の製造方法。 5. The wiring member forming step according to claim 3, wherein the wiring member forming step further includes a second wiring member forming step of forming a second wiring member so as to close the other end of the through portion. Method for manufacturing a printed wiring board.
6 . 前記第 2配線構成部材形成工程は、 粘性を有する導電性材料を、 前記貫通孔 の前記他端に充填することにより、 前記第 2の配線構成部材を形成する工程を含む ことを特徴とする請求項 5に記載の配線基板の製造方法。  6. The second wiring component forming step includes a step of filling the other end of the through-hole with a viscous conductive material to form the second wiring component. 6. The method for manufacturing a wiring board according to claim 5, wherein:
7. 前記配線部材形成工程は、 前記貫通部の内壁に導電膜を形成する工程を含む ことを特徴とする請求項 1から 5のいずれかに記載の配線基板の製造方法。  7. The method for manufacturing a wiring board according to claim 1, wherein the wiring member forming step includes a step of forming a conductive film on an inner wall of the through portion.
8. 基板及び当該基板に設けられた貫通部に充填された配線部材を有する配線基 板の製造方法であって、  8. A method for manufacturing a wiring board having a substrate and a wiring member filled in a through portion provided in the substrate,
表面及ぴ裏面を有する基板を用意する工程と、  Preparing a substrate having a front surface and a back surface;
前記基板の前記表面から前記裏面に渡つて貫通孔を形成する工程と、  Forming a through-hole from the front surface of the substrate to the back surface,
前記基板の表面において前記貫通孔の一端を塞ぐように導電性テープを貼付する 工程と、  Affixing a conductive tape so as to close one end of the through hole on the surface of the substrate,
前記導電' [·生テープを電極として鍍金により前記貫通孔に前記配線部材を充填する 工程と  Filling the through-hole with the wiring member by plating using the conductive tape as an electrode;
を備えたことを特徴とする配線基板の製造方法。 A method for manufacturing a wiring board, comprising:
PCT/JP2002/010378 2001-10-05 2002-10-04 Method for manufacturing wiring board WO2003032700A1 (en)

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JP4961162B2 (en) * 2006-05-01 2012-06-27 有限会社 エスアイジェイテクノロジ Electrical connector and cartridge
CN101877935B (en) * 2009-04-29 2012-06-20 鸿富锦精密工业(深圳)有限公司 Mainboard wiring method and mainboard for wiring by using same

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US5454161A (en) * 1993-04-29 1995-10-03 Fujitsu Limited Through hole interconnect substrate fabrication process
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JPH11177200A (en) * 1997-12-05 1999-07-02 Toshiba Corp Circuit board, production method and manufacturing device, and its inspection method
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2901635A1 (en) * 2006-06-09 2007-11-30 Commissariat Energie Atomique Front and rear surfaces three dimensional electrical connection forming method for e.g. silicon substrate, involves engraving lines and trenches, and realising metallization of walls of lines and base of trenches on surfaces by layers

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