WO2003021842A3 - Hybrid circuit having nanotube electromechanical memory - Google Patents
Hybrid circuit having nanotube electromechanical memory Download PDFInfo
- Publication number
- WO2003021842A3 WO2003021842A3 PCT/US2002/023659 US0223659W WO03021842A3 WO 2003021842 A3 WO2003021842 A3 WO 2003021842A3 US 0223659 W US0223659 W US 0223659W WO 03021842 A3 WO03021842 A3 WO 03021842A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electromechanical memory
- hybrid circuit
- nanotube
- circuit
- memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
- G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/10—Resistive cells; Technology aspects
- G11C2213/16—Memory cell being a nanotube, e.g. suspended nanotube
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/724—Devices having flexible or movable element
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/94—Specified use of nanostructure for electronic or optoelectronic application in a logic circuit
- Y10S977/942—Specified use of nanostructure for electronic or optoelectronic application in a logic circuit including protein logic element
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/943—Information storage or retrieval using nanostructure
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02789150A EP1410552A4 (en) | 2001-07-25 | 2002-07-25 | Hybrid circuit having nanotube electromechanical memory |
CA002454366A CA2454366A1 (en) | 2001-07-25 | 2002-07-25 | Hybrid circuit having nanotube electromechanical memory |
AU2002353769A AU2002353769A1 (en) | 2001-07-25 | 2002-07-25 | Hybrid circuit having nanotube electromechanical memory |
TW092100453A TWI240270B (en) | 2001-07-25 | 2003-01-10 | Hybrid circuit having nanotube electromechanical memory |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/915,095 US6574130B2 (en) | 2001-07-25 | 2001-07-25 | Hybrid circuit having nanotube electromechanical memory |
US09/915,095 | 2001-07-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003021842A2 WO2003021842A2 (en) | 2003-03-13 |
WO2003021842A3 true WO2003021842A3 (en) | 2003-05-01 |
Family
ID=25435209
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2002/023659 WO2003021842A2 (en) | 2001-07-25 | 2002-07-25 | Hybrid circuit having nanotube electromechanical memory |
Country Status (6)
Country | Link |
---|---|
US (4) | US6574130B2 (en) |
EP (1) | EP1410552A4 (en) |
AU (1) | AU2002353769A1 (en) |
CA (1) | CA2454366A1 (en) |
TW (1) | TWI240270B (en) |
WO (1) | WO2003021842A2 (en) |
Families Citing this family (174)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002341060A (en) * | 2001-05-11 | 2002-11-27 | Seiko Instruments Inc | Composite electric component, main plate structure body and electronic timepiece using it |
US6593666B1 (en) * | 2001-06-20 | 2003-07-15 | Ambient Systems, Inc. | Energy conversion systems using nanometer scale assemblies and methods for using same |
US6924538B2 (en) * | 2001-07-25 | 2005-08-02 | Nantero, Inc. | Devices having vertically-disposed nanofabric articles and methods of making the same |
US6706402B2 (en) | 2001-07-25 | 2004-03-16 | Nantero, Inc. | Nanotube films and articles |
US7259410B2 (en) * | 2001-07-25 | 2007-08-21 | Nantero, Inc. | Devices having horizontally-disposed nanofabric articles and methods of making the same |
US7566478B2 (en) * | 2001-07-25 | 2009-07-28 | Nantero, Inc. | Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles |
US6574130B2 (en) | 2001-07-25 | 2003-06-03 | Nantero, Inc. | Hybrid circuit having nanotube electromechanical memory |
US6919592B2 (en) * | 2001-07-25 | 2005-07-19 | Nantero, Inc. | Electromechanical memory array using nanotube ribbons and method for making same |
US6643165B2 (en) | 2001-07-25 | 2003-11-04 | Nantero, Inc. | Electromechanical memory having cell selection circuitry constructed with nanotube technology |
US7563711B1 (en) * | 2001-07-25 | 2009-07-21 | Nantero, Inc. | Method of forming a carbon nanotube-based contact to semiconductor |
US6835591B2 (en) | 2001-07-25 | 2004-12-28 | Nantero, Inc. | Methods of nanotube films and articles |
US7319057B2 (en) * | 2001-10-30 | 2008-01-15 | Ovonyx, Inc. | Phase change material memory device |
US6784028B2 (en) | 2001-12-28 | 2004-08-31 | Nantero, Inc. | Methods of making electromechanical three-trace junction devices |
KR100441751B1 (en) * | 2001-12-28 | 2004-07-27 | 한국전자통신연구원 | Method for Fabricating field emission devices |
US7335395B2 (en) * | 2002-04-23 | 2008-02-26 | Nantero, Inc. | Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles |
US7304128B2 (en) * | 2002-06-04 | 2007-12-04 | E.I. Du Pont De Nemours And Company | Carbon nanotube binding peptides |
JP4186727B2 (en) * | 2002-07-26 | 2008-11-26 | 松下電器産業株式会社 | switch |
ATE426575T1 (en) | 2003-01-07 | 2009-04-15 | Univ Ramot | PEPTIDE ANOSTRUCTURES CONTAINING FOREIGN MATERIAL AND METHOD FOR PRODUCING THE SAME |
US7560136B2 (en) * | 2003-01-13 | 2009-07-14 | Nantero, Inc. | Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles |
US7858185B2 (en) * | 2003-09-08 | 2010-12-28 | Nantero, Inc. | High purity nanotube fabrics and films |
WO2004065655A1 (en) * | 2003-01-13 | 2004-08-05 | Nantero, Inc. | Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles |
US7294877B2 (en) | 2003-03-28 | 2007-11-13 | Nantero, Inc. | Nanotube-on-gate FET structures and applications |
US6944054B2 (en) | 2003-03-28 | 2005-09-13 | Nantero, Inc. | NRAM bit selectable two-device nanotube array |
US7075141B2 (en) | 2003-03-28 | 2006-07-11 | Nantero, Inc. | Four terminal non-volatile transistor device |
US7113426B2 (en) * | 2003-03-28 | 2006-09-26 | Nantero, Inc. | Non-volatile RAM cell and array using nanotube switch position for information state |
US6995046B2 (en) * | 2003-04-22 | 2006-02-07 | Nantero, Inc. | Process for making byte erasable devices having elements made with nanotubes |
US7045421B2 (en) * | 2003-04-22 | 2006-05-16 | Nantero, Inc. | Process for making bit selectable devices having elements made with nanotubes |
US6838721B2 (en) * | 2003-04-25 | 2005-01-04 | Freescale Semiconductor, Inc. | Integrated circuit with a transitor over an interconnect layer |
WO2005019793A2 (en) * | 2003-05-14 | 2005-03-03 | Nantero, Inc. | Sensor platform using a horizontally oriented nanotube element |
US7095645B2 (en) * | 2003-06-02 | 2006-08-22 | Ambient Systems, Inc. | Nanoelectromechanical memory cells and data storage devices |
US7148579B2 (en) | 2003-06-02 | 2006-12-12 | Ambient Systems, Inc. | Energy conversion systems utilizing parallel array of automatic switches and generators |
US7199498B2 (en) * | 2003-06-02 | 2007-04-03 | Ambient Systems, Inc. | Electrical assemblies using molecular-scale electrically conductive and mechanically flexible beams and methods for application of same |
US20040238907A1 (en) * | 2003-06-02 | 2004-12-02 | Pinkerton Joseph F. | Nanoelectromechanical transistors and switch systems |
US7274064B2 (en) * | 2003-06-09 | 2007-09-25 | Nanatero, Inc. | Non-volatile electromechanical field effect devices and circuits using same and methods of forming same |
US7161218B2 (en) * | 2003-06-09 | 2007-01-09 | Nantero, Inc. | One-time programmable, non-volatile field effect devices and methods of making same |
US6921670B2 (en) * | 2003-06-24 | 2005-07-26 | Hewlett-Packard Development Company, Lp. | Nanostructure fabrication using microbial mandrel |
US7273661B2 (en) * | 2003-07-02 | 2007-09-25 | Dupont Toray Co., Ltd. | Electrically conductive polyimide compositions having a carbon nanotube filler component and methods relating thereto |
US7315505B2 (en) * | 2003-07-14 | 2008-01-01 | Hewlett-Packard Development Company, L.P. | Storage device having a probe with plural tips |
JP3731589B2 (en) * | 2003-07-18 | 2006-01-05 | ソニー株式会社 | Imaging device and synchronization signal generator |
JP2005045188A (en) * | 2003-07-25 | 2005-02-17 | Fuji Xerox Co Ltd | Electronic element and integrated circuit, and manufacturing method therefor |
US7376008B2 (en) | 2003-08-07 | 2008-05-20 | Contour Seminconductor, Inc. | SCR matrix storage device |
US7416019B2 (en) * | 2003-08-13 | 2008-08-26 | The Johns Hopkins University | Thermal interface and switch using carbon nanotube arrays |
US7173314B2 (en) * | 2003-08-13 | 2007-02-06 | Hewlett-Packard Development Company, L.P. | Storage device having a probe and a storage cell with moveable parts |
US7289357B2 (en) | 2003-08-13 | 2007-10-30 | Nantero, Inc. | Isolation structure for deflectable nanotube elements |
JP2007502545A (en) * | 2003-08-13 | 2007-02-08 | ナンテロ,インク. | Nanotube-based exchange element with a plurality of control devices and circuit produced from said element |
WO2005017967A2 (en) | 2003-08-13 | 2005-02-24 | Nantero, Inc. | Nanotube device structure and methods of fabrication |
US7115960B2 (en) * | 2003-08-13 | 2006-10-03 | Nantero, Inc. | Nanotube-based switching elements |
WO2005084164A2 (en) * | 2003-08-13 | 2005-09-15 | Nantero, Inc. | Nanotube-based switching elements and logic circuits |
US7416993B2 (en) * | 2003-09-08 | 2008-08-26 | Nantero, Inc. | Patterned nanowire articles on a substrate and methods of making the same |
US7375369B2 (en) * | 2003-09-08 | 2008-05-20 | Nantero, Inc. | Spin-coatable liquid for formation of high purity nanotube films |
US7504051B2 (en) * | 2003-09-08 | 2009-03-17 | Nantero, Inc. | Applicator liquid for use in electronic manufacturing processes |
JP4412052B2 (en) * | 2003-10-28 | 2010-02-10 | 富士ゼロックス株式会社 | Composite material and method for producing the same |
JP2005235728A (en) * | 2003-12-01 | 2005-09-02 | Fuji Xerox Co Ltd | Electrical component, electrical apparatus, and their manufacturing method |
WO2005069789A2 (en) * | 2003-12-18 | 2005-08-04 | Clemson University | Process for separating metallic from semiconducting single-walled carbon nanotubes |
US7034332B2 (en) | 2004-01-27 | 2006-04-25 | Hewlett-Packard Development Company, L.P. | Nanometer-scale memory device utilizing self-aligned rectifying elements and method of making |
US7528437B2 (en) * | 2004-02-11 | 2009-05-05 | Nantero, Inc. | EEPROMS using carbon nanotubes for cell storage |
US20050218397A1 (en) * | 2004-04-06 | 2005-10-06 | Availableip.Com | NANO-electronics for programmable array IC |
US20060086994A1 (en) * | 2004-05-14 | 2006-04-27 | Susanne Viefers | Nanoelectromechanical components |
CA2567156A1 (en) * | 2004-05-17 | 2006-07-20 | Cambrios Technology Corp. | Biofabrication of transistors including field effect transistors |
US7352608B2 (en) * | 2004-05-24 | 2008-04-01 | Trustees Of Boston University | Controllable nanomechanical memory element |
US8075863B2 (en) | 2004-05-26 | 2011-12-13 | Massachusetts Institute Of Technology | Methods and devices for growth and/or assembly of nanostructures |
US7658869B2 (en) * | 2004-06-03 | 2010-02-09 | Nantero, Inc. | Applicator liquid containing ethyl lactate for preparation of nanotube films |
US7556746B2 (en) * | 2004-06-03 | 2009-07-07 | Nantero, Inc. | Method of making an applicator liquid for electronics fabrication process |
US7709880B2 (en) * | 2004-06-09 | 2010-05-04 | Nantero, Inc. | Field effect devices having a gate controlled via a nanotube switching element |
US7288970B2 (en) * | 2004-06-18 | 2007-10-30 | Nantero, Inc. | Integrated nanotube and field effect switching device |
US7167026B2 (en) * | 2004-06-18 | 2007-01-23 | Nantero, Inc. | Tri-state circuit using nanotube switching elements |
US7330709B2 (en) * | 2004-06-18 | 2008-02-12 | Nantero, Inc. | Receiver circuit using nanotube-based switches and logic |
US7164744B2 (en) * | 2004-06-18 | 2007-01-16 | Nantero, Inc. | Nanotube-based logic driver circuits |
US7161403B2 (en) * | 2004-06-18 | 2007-01-09 | Nantero, Inc. | Storage elements using nanotube switching elements |
US7652342B2 (en) | 2004-06-18 | 2010-01-26 | Nantero, Inc. | Nanotube-based transfer devices and related circuits |
US7329931B2 (en) * | 2004-06-18 | 2008-02-12 | Nantero, Inc. | Receiver circuit using nanotube-based switches and transistors |
CN101010793B (en) * | 2004-06-30 | 2011-09-28 | Nxp股份有限公司 | Method for manufacturing an electric device with a layer of conductive material contacted by nanowire |
EP1805869A2 (en) | 2004-07-19 | 2007-07-11 | Ambient Systems, Inc. | Nanometer-scale electrostatic and electromagnetic motors and generators |
TWI399864B (en) * | 2004-09-16 | 2013-06-21 | Nantero Inc | Light emitters using nanotubes and methods of making same |
CA2581058C (en) * | 2004-09-21 | 2012-06-26 | Nantero, Inc. | Resistive elements using carbon nanotubes |
CA2581248A1 (en) | 2004-09-22 | 2006-12-28 | Nantero, Inc. | Random access memory including nanotube switching elements |
WO2006137926A2 (en) * | 2004-11-02 | 2006-12-28 | Nantero, Inc. | Nanotube esd protective devices and corresponding nonvolatile and volatile nanotube switches |
US20100147657A1 (en) * | 2004-11-02 | 2010-06-17 | Nantero, Inc. | Nanotube esd protective devices and corresponding nonvolatile and volatile nanotube switches |
US20060092695A1 (en) * | 2004-11-02 | 2006-05-04 | Wing Malcolm J | Hybrid memory array with single cycle access |
KR101536669B1 (en) | 2004-11-09 | 2015-07-15 | 더 보드 오브 리전츠 오브 더 유니버시티 오브 텍사스 시스템 | The fabrication and application of nanofiber ribbons and sheets and twisted and non-twisted nanofiber yarns |
WO2006065937A2 (en) * | 2004-12-16 | 2006-06-22 | Nantero, Inc. | Aqueous carbon nanotube applicator liquids and methods for producing applicator liquids thereof |
US7598544B2 (en) * | 2005-01-14 | 2009-10-06 | Nanotero, Inc. | Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same |
US8362525B2 (en) * | 2005-01-14 | 2013-01-29 | Nantero Inc. | Field effect device having a channel of nanofabric and methods of making same |
US7824946B1 (en) | 2005-03-11 | 2010-11-02 | Nantero, Inc. | Isolated metal plug process for use in fabricating carbon nanotube memory cells |
US9390790B2 (en) | 2005-04-05 | 2016-07-12 | Nantero Inc. | Carbon based nonvolatile cross point memory incorporating carbon based diode select devices and MOSFET select devices for memory and logic applications |
US9287356B2 (en) * | 2005-05-09 | 2016-03-15 | Nantero Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
US20060237799A1 (en) * | 2005-04-21 | 2006-10-26 | Lsi Logic Corporation | Carbon nanotube memory cells having flat bottom electrode contact surface |
US7479654B2 (en) * | 2005-05-09 | 2009-01-20 | Nantero, Inc. | Memory arrays using nanotube articles with reprogrammable resistance |
US8513768B2 (en) * | 2005-05-09 | 2013-08-20 | Nantero Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
US8217490B2 (en) * | 2005-05-09 | 2012-07-10 | Nantero Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
US7394687B2 (en) * | 2005-05-09 | 2008-07-01 | Nantero, Inc. | Non-volatile-shadow latch using a nanotube switch |
US9196615B2 (en) * | 2005-05-09 | 2015-11-24 | Nantero Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
US9911743B2 (en) * | 2005-05-09 | 2018-03-06 | Nantero, Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
TWI324773B (en) * | 2005-05-09 | 2010-05-11 | Nantero Inc | Non-volatile shadow latch using a nanotube switch |
US7835170B2 (en) * | 2005-05-09 | 2010-11-16 | Nantero, Inc. | Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks |
US8013363B2 (en) * | 2005-05-09 | 2011-09-06 | Nantero, Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
US8183665B2 (en) * | 2005-11-15 | 2012-05-22 | Nantero Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
US7781862B2 (en) | 2005-05-09 | 2010-08-24 | Nantero, Inc. | Two-terminal nanotube devices and systems and methods of making same |
US7598127B2 (en) * | 2005-05-12 | 2009-10-06 | Nantero, Inc. | Nanotube fuse structure |
US7575693B2 (en) * | 2005-05-23 | 2009-08-18 | Nantero, Inc. | Method of aligning nanotubes and wires with an etched feature |
US7541216B2 (en) * | 2005-06-09 | 2009-06-02 | Nantero, Inc. | Method of aligning deposited nanotubes onto an etched feature using a spacer |
US7402770B2 (en) * | 2005-06-10 | 2008-07-22 | Lsi Logic Corporation | Nano structure electrode design |
JP5054936B2 (en) * | 2005-06-22 | 2012-10-24 | パナソニック株式会社 | Electromechanical memory, electric circuit using the same, and driving method of electromechanical memory |
JP5019192B2 (en) * | 2005-06-24 | 2012-09-05 | 株式会社東芝 | Semiconductor device |
US7538040B2 (en) | 2005-06-30 | 2009-05-26 | Nantero, Inc. | Techniques for precision pattern transfer of carbon nanotubes from photo mask to wafers |
EP1910217A2 (en) * | 2005-07-19 | 2008-04-16 | PINKERTON, Joseph P. | Heat activated nanometer-scale pump |
US7612424B1 (en) | 2005-07-22 | 2009-11-03 | Northwestern University | Nanoelectromechanical bistable cantilever device |
KR100682952B1 (en) * | 2005-08-31 | 2007-02-15 | 삼성전자주식회사 | Nano-elastic memory device and method of manufacturing the same |
ATE518131T1 (en) * | 2005-09-06 | 2011-08-15 | Nantero Inc | NANOTUBE-BASED SENSOR SYSTEM AND METHOD FOR USE THEREOF |
US7850778B2 (en) * | 2005-09-06 | 2010-12-14 | Lemaire Charles A | Apparatus and method for growing fullerene nanotube forests, and forming nanotube films, threads and composite structures therefrom |
WO2008054364A2 (en) | 2005-09-06 | 2008-05-08 | Nantero, Inc. | Carbon nanotubes for the selective transfer of heat from electronics |
US7744793B2 (en) | 2005-09-06 | 2010-06-29 | Lemaire Alexander B | Apparatus and method for growing fullerene nanotube forests, and forming nanotube films, threads and composite structures therefrom |
JP4599256B2 (en) * | 2005-09-09 | 2010-12-15 | 株式会社東芝 | Magnetic switching element and signal processing apparatus using the same |
US7446044B2 (en) * | 2005-09-19 | 2008-11-04 | California Institute Of Technology | Carbon nanotube switches for memory, RF communications and sensing applications, and methods of making the same |
US7885103B2 (en) | 2005-11-22 | 2011-02-08 | Agate Logic, Inc. | Non-volatile electromechanical configuration bit array |
US8063455B2 (en) * | 2005-11-22 | 2011-11-22 | Agate Logic, Inc. | Multi-terminal electromechanical nanocsopic switching device with control and release electrodes |
US7385839B2 (en) * | 2005-12-01 | 2008-06-10 | International Business Machines Corporation | Memory devices using carbon nanotube (CNT) technologies |
US20070126001A1 (en) * | 2005-12-05 | 2007-06-07 | Sung-Yool Choi | Organic semiconductor device and method of fabricating the same |
US7786465B2 (en) * | 2005-12-20 | 2010-08-31 | Invention Science Fund 1, Llc | Deletable nanotube circuit |
US8264137B2 (en) | 2006-01-03 | 2012-09-11 | Samsung Electronics Co., Ltd. | Curing binder material for carbon nanotube electron emission cathodes |
DE102006004218B3 (en) * | 2006-01-30 | 2007-08-16 | Infineon Technologies Ag | Electromechanical storage device and method for manufacturing an electromechanical storage device |
US20070183189A1 (en) * | 2006-02-08 | 2007-08-09 | Thomas Nirschl | Memory having nanotube transistor access device |
US7564262B2 (en) * | 2006-04-03 | 2009-07-21 | Blaise Laurent Mouttet | Crossbar comparator |
US20070233761A1 (en) * | 2006-04-03 | 2007-10-04 | Mouttet Blaise L | Crossbar arithmetic processor |
US8183554B2 (en) * | 2006-04-03 | 2012-05-22 | Blaise Laurent Mouttet | Symmetrical programmable memresistor crossbar structure |
US9965251B2 (en) * | 2006-04-03 | 2018-05-08 | Blaise Laurent Mouttet | Crossbar arithmetic and summation processor |
US7576565B2 (en) * | 2006-04-03 | 2009-08-18 | Blaise Laurent Mouttet | Crossbar waveform driver circuit |
US7609086B2 (en) * | 2006-04-03 | 2009-10-27 | Blaise Laurent Mouttet | Crossbar control circuit |
US7302513B2 (en) * | 2006-04-03 | 2007-11-27 | Blaise Laurent Mouttet | Programmable crossbar signal processor |
KR100790822B1 (en) * | 2006-08-07 | 2008-01-02 | 삼성전자주식회사 | Non volatic memory device and method manufacturing the same |
EP2057633B1 (en) | 2006-08-08 | 2013-03-06 | Nantero, Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
US8945970B2 (en) * | 2006-09-22 | 2015-02-03 | Carnegie Mellon University | Assembling and applying nano-electro-mechanical systems |
KR100827705B1 (en) * | 2006-10-23 | 2008-05-07 | 삼성전자주식회사 | on volatic memory device and method manufacturing the same |
US7619919B2 (en) * | 2007-01-12 | 2009-11-17 | Marvell World Trade Ltd. | Multi-level memory |
US20080192014A1 (en) * | 2007-02-08 | 2008-08-14 | Tyco Electronics Corporation | Touch screen using carbon nanotube electrodes |
WO2008127780A2 (en) * | 2007-02-21 | 2008-10-23 | Nantero, Inc. | Symmetric touch screen system with carbon nanotube-based transparent conductive electrode pairs |
US7839028B2 (en) * | 2007-04-03 | 2010-11-23 | CJP IP Holding, Ltd. | Nanoelectromechanical systems and methods for making the same |
WO2009002748A1 (en) * | 2007-06-22 | 2008-12-31 | Nantero, Inc. | Two-terminal nanotube devices including a nanotube bridge and methods of making same |
US7701013B2 (en) * | 2007-07-10 | 2010-04-20 | International Business Machines Corporation | Nanoelectromechanical transistors and methods of forming same |
US7550354B2 (en) * | 2007-07-11 | 2009-06-23 | International Business Machines Corporation | Nanoelectromechanical transistors and methods of forming same |
EA020950B1 (en) * | 2007-09-17 | 2015-03-31 | Баррик Гольд Корпорейшн | Method to improve recovery of gold from double refractory gold ores |
US8262770B2 (en) | 2007-09-18 | 2012-09-11 | Barrick Gold Corporation | Process for controlling acid in sulfide pressure oxidation processes |
WO2009037594A2 (en) * | 2007-09-18 | 2009-03-26 | Barrick Gold Corporation | Process for recovering gold and silver from refractory ores |
WO2009076534A1 (en) * | 2007-12-11 | 2009-06-18 | Cornell University | Resonant body transistor and oscillator |
US8009461B2 (en) * | 2008-01-07 | 2011-08-30 | International Business Machines Corporation | SRAM device, and SRAM device design structure, with adaptable access transistors |
US7929341B2 (en) | 2008-03-24 | 2011-04-19 | Samsung Electronics Co., Ltd. | Electromechanical switch and method of forming the same |
US7612270B1 (en) * | 2008-04-09 | 2009-11-03 | International Business Machines Corporation | Nanoelectromechanical digital inverter |
US7812335B2 (en) * | 2008-04-11 | 2010-10-12 | Sandisk 3D Llc | Sidewall structured switchable resistor cell |
US8048474B2 (en) * | 2008-04-11 | 2011-11-01 | Sandisk 3D Llc | Method of making nonvolatile memory cell containing carbon resistivity switching as a storage element by low temperature processing |
US7830698B2 (en) * | 2008-04-11 | 2010-11-09 | Sandisk 3D Llc | Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same |
US7723180B2 (en) * | 2008-04-11 | 2010-05-25 | Sandisk 3D Llc | Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same |
US7859887B2 (en) * | 2008-04-11 | 2010-12-28 | Sandisk 3D Llc | Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same |
US20090256217A1 (en) * | 2008-04-14 | 2009-10-15 | Lsi Logic Corporation | Carbon nanotube memory cells having flat bottom electrode contact surface |
US8586961B2 (en) | 2008-05-09 | 2013-11-19 | The Board Of Trustees Of The University Of Illinois | Resistive changing device |
US9263126B1 (en) | 2010-09-01 | 2016-02-16 | Nantero Inc. | Method for dynamically accessing and programming resistive change element arrays |
US8319205B2 (en) * | 2008-08-14 | 2012-11-27 | Nantero Inc. | Nonvolatile nanotube programmable logic devices and a nonvolatile nanotube field programmable gate array using same |
US7897954B2 (en) * | 2008-10-10 | 2011-03-01 | Macronix International Co., Ltd. | Dielectric-sandwiched pillar memory device |
KR20100062609A (en) | 2008-12-02 | 2010-06-10 | 삼성전자주식회사 | Micro-electro mechanical system, memory device including the same and method of manufacturing the same |
WO2010144097A1 (en) * | 2009-06-12 | 2010-12-16 | Hewlett-Packard Development Company, L.P. | Hierarchical on-chip memory |
US8253171B1 (en) | 2009-08-27 | 2012-08-28 | Lockheed Martin Corporation | Two terminal nanotube switch, memory array incorporating the same and method of making |
US8350360B1 (en) | 2009-08-28 | 2013-01-08 | Lockheed Martin Corporation | Four-terminal carbon nanotube capacitors |
US20110056812A1 (en) * | 2009-09-08 | 2011-03-10 | Kaul Anupama B | Nano-electro-mechanical switches using three-dimensional sidewall-conductive carbon nanofibers and method for making the same |
US8435798B2 (en) * | 2010-01-13 | 2013-05-07 | California Institute Of Technology | Applications and methods of operating a three-dimensional nano-electro-mechanical resonator and related devices |
US7982504B1 (en) | 2010-01-29 | 2011-07-19 | Hewlett Packard Development Company, L.P. | Interconnection architecture for multilayer circuits |
US9324718B2 (en) | 2010-01-29 | 2016-04-26 | Hewlett Packard Enterprise Development Lp | Three dimensional multilayer circuit |
US8405189B1 (en) | 2010-02-08 | 2013-03-26 | Lockheed Martin Corporation | Carbon nanotube (CNT) capacitors and devices integrated with CNT capacitors |
US8164946B2 (en) * | 2010-07-20 | 2012-04-24 | Tdk Corporation | Magnetic memory element, magnetic memory device, information recording/reproducing apparatus |
US8125824B1 (en) | 2010-09-02 | 2012-02-28 | Lockheed Martin Corporation | Nanotube random access memory (NRAM) and transistor integration |
US10069072B2 (en) | 2010-09-20 | 2018-09-04 | Nantero, Inc. | Nanotube solutions with high concentration and low contamination and methods for purifiying nanotube solutions |
US9324422B2 (en) | 2011-04-18 | 2016-04-26 | The Board Of Trustees Of The University Of Illinois | Adaptive resistive device and methods thereof |
US9196766B1 (en) | 2012-04-25 | 2015-11-24 | Magnolia Optical Technologies, Inc. | Thermal detectors using graphene and oxides of graphene and methods of making the same |
US9412442B2 (en) | 2012-04-27 | 2016-08-09 | The Board Of Trustees Of The University Of Illinois | Methods for forming a nanowire and apparatus thereof |
US9893731B1 (en) * | 2012-12-11 | 2018-02-13 | Lockheed Martin Corporation | Programmable application-specific integrated circuit |
WO2018037881A1 (en) * | 2016-08-25 | 2018-03-01 | 日本電気株式会社 | Flexible electrode and sensor element |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6128214A (en) * | 1999-03-29 | 2000-10-03 | Hewlett-Packard | Molecular wire crossbar memory |
US6144481A (en) * | 1998-12-18 | 2000-11-07 | Eastman Kodak Company | Method and system for actuating electro-mechanical ribbon elements in accordance to a data stream |
US6159620A (en) * | 1997-03-31 | 2000-12-12 | The Regents Of The University Of California | Single-electron solid state electronic device |
Family Cites Families (281)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6198A (en) | 1849-03-20 | Cookufg-kaetgb | ||
US90331A (en) * | 1869-05-18 | corse | ||
US55010A (en) * | 1866-05-22 | Improvement in heddle-motions for looms | ||
US655A (en) | 1838-03-24 | Combined parlor and kitchen fireplace | ||
US61441A (en) * | 1867-01-22 | Isaac v | ||
US88938A (en) * | 1869-04-13 | Improvement in drive-wheels for harvesters | ||
US23986A (en) * | 1859-05-10 | merrill | ||
US6159A (en) | 1849-03-10 | Let-off motion of looms | ||
US6128A (en) | 1849-02-20 | Short slide-valve by chamfering corners | ||
US3448302A (en) | 1966-06-16 | 1969-06-03 | Itt | Operating circuit for phase change memory devices |
US3892690A (en) | 1970-08-25 | 1975-07-01 | Cities Service Co | Method of preparing polyethylene foam |
FR2115034B1 (en) | 1970-11-24 | 1973-11-23 | Sescosem | |
US3892890A (en) | 1972-05-12 | 1975-07-01 | Hitachi Ltd | Process for forming carbon coatings |
US3970887A (en) * | 1974-06-19 | 1976-07-20 | Micro-Bit Corporation | Micro-structure field emission electron source |
US5032538A (en) | 1979-08-10 | 1991-07-16 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology utilizing selective epitaxial growth methods |
US4378629A (en) | 1979-08-10 | 1983-04-05 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology including permeable base transistor, fabrication method |
US4324814A (en) | 1981-03-19 | 1982-04-13 | Rca Corporation | Method for forming a narrow thin film line |
US4524431A (en) | 1982-02-01 | 1985-06-18 | Texas Instruments Incorporated | High-speed nonvolatile memory array |
US4495511A (en) * | 1982-08-23 | 1985-01-22 | The United States Of America As Represented By The Secretary Of The Navy | Permeable base transistor structure |
US4510016A (en) | 1982-12-09 | 1985-04-09 | Gte Laboratories | Method of fabricating submicron silicon structures such as permeable base transistors |
US4495551A (en) | 1983-08-17 | 1985-01-22 | Halkey-Roberts Corporation | Conductor tube for flashlights |
US4707197A (en) | 1984-08-02 | 1987-11-17 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method of producing a silicide/Si heteroepitaxial structure, and articles produced by the method |
JPS6177199A (en) | 1984-09-21 | 1986-04-19 | Toshiba Corp | Semiconductor memory |
JPS6194042A (en) | 1984-10-16 | 1986-05-12 | Matsushita Electric Ind Co Ltd | Molecular construction and its manufacture |
JPS61121369A (en) | 1984-11-19 | 1986-06-09 | Fujitsu Ltd | Semiconductor device |
US4901121A (en) | 1985-03-29 | 1990-02-13 | American Telephone & Telegraph Co., At&T Bell Labs. | Semiconductor device comprising a perforated metal silicide layer |
US4701842A (en) | 1985-10-04 | 1987-10-20 | International Business Machines Corporation | Method and apparatus for avoiding excessive delay in a pipelined processor during the execution of a microbranch instruction |
JPS6284495A (en) * | 1985-10-08 | 1987-04-17 | Nippon Texas Instr Kk | Semiconductor memory device |
US5311214A (en) * | 1985-11-08 | 1994-05-10 | Canon Kabushiki Kaisha | Ink jet recording apparatus having means for removing foreign material from an ink supply path by first introducing an into the ink supply path |
US4758534A (en) | 1985-11-13 | 1988-07-19 | Bell Communications Research, Inc. | Process for producing porous refractory metal layers embedded in semiconductor devices |
US4819212A (en) | 1986-05-31 | 1989-04-04 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device with readout test circuitry |
US4761801A (en) | 1986-06-18 | 1988-08-02 | Hughes Aircraft Company | Look ahead terminal counter |
US4939556A (en) | 1986-07-10 | 1990-07-03 | Canon Kabushiki Kaisha | Conductor device |
US4845533A (en) | 1986-08-22 | 1989-07-04 | Energy Conversion Devices, Inc. | Thin film electrical devices with amorphous carbon electrodes and method of making same |
CH670914A5 (en) | 1986-09-10 | 1989-07-14 | Landis & Gyr Ag | |
US4876667A (en) | 1987-06-22 | 1989-10-24 | Energy Conversion Devices, Inc. | Data storage device having a phase change memory medium reversible by direct overwrite |
US4924436A (en) | 1987-06-22 | 1990-05-08 | Energy Conversion Devices, Inc. | Data storage device having a phase change memory medium reversible by direct overwrite and method of direct overwrite |
US4853893A (en) | 1987-07-02 | 1989-08-01 | Ramtron Corporation | Data storage device and method of using a ferroelectric capacitance divider |
EP0315392A3 (en) | 1987-11-05 | 1990-09-12 | Energy Conversion Devices, Inc. | Data storage device having an encapsulated phase change memory medium and means for suppressing ablation thereof |
US4947226A (en) | 1987-12-08 | 1990-08-07 | Hoenywell, Inc. | Bilateral switching device |
US5155561A (en) | 1988-01-05 | 1992-10-13 | Massachusetts Institute Of Technology | Permeable base transistor having an electrode configuration for heat dissipation |
US5184320A (en) | 1988-02-12 | 1993-02-02 | Texas Instruments Incorporated | Cached random access memory device and system |
US4888630A (en) | 1988-03-21 | 1989-12-19 | Texas Instruments Incorporated | Floating-gate transistor with a non-linear intergate dielectric |
GB8807225D0 (en) | 1988-03-25 | 1988-04-27 | Hughes Microelectronics Ltd | Nonvolatile ram cell |
US5198994A (en) | 1988-08-31 | 1993-03-30 | Kabushiki Kaisha Toshiba | Ferroelectric memory device |
US5010037A (en) | 1988-10-14 | 1991-04-23 | California Institute Of Technology | Pinhole-free growth of epitaxial CoSi2 film on Si(111) |
US5592642A (en) | 1988-12-22 | 1997-01-07 | Framdrive | Ferroelectric storage device emulating a rotating disk drive unit in a computer system and having an optical and parallel data interface |
US5592644A (en) | 1988-12-22 | 1997-01-07 | Framdrive | Ferroelectric storage device emulating a rotating disk drive unit in a computer system and having an optical data interface |
US5592643A (en) | 1988-12-22 | 1997-01-07 | Framdrive | Ferroelectric storage device emulating a rotating disk drive unit in acomputer system and having a parallel data interface |
US5089545A (en) | 1989-02-12 | 1992-02-18 | Biotech International, Inc. | Switching and memory elements from polyamino acids and the method of their assembly |
GB8907045D0 (en) | 1989-03-29 | 1989-05-10 | Hughes Microelectronics Ltd | Sense amplifier |
JPH02296372A (en) | 1989-05-10 | 1990-12-06 | Mitsubishi Electric Corp | Transmissive base transistor |
US6346413B1 (en) | 1989-06-07 | 2002-02-12 | Affymetrix, Inc. | Polymer arrays |
US4985871A (en) | 1989-11-13 | 1991-01-15 | Chips And Technologies, Inc. | Memory controller for using reserved dram addresses for expanded memory space |
US5161218A (en) | 1989-11-13 | 1992-11-03 | Chips And Technologies, Inc. | Memory controller for using reserved DRAM addresses for EMS |
DE4025269A1 (en) | 1990-02-07 | 1991-08-08 | Forschungszentrum Juelich Gmbh | ELECTRONIC COMPONENT AND METHOD FOR THE PRODUCTION THEREOF |
US5412785A (en) | 1990-04-09 | 1995-05-02 | Motorola, Inc. | Microprogrammed data processor which includes a microsequencer in which a next microaddress output of a microROM is connected to the or-plane of an entry PLA |
FR2663466A1 (en) | 1990-06-15 | 1991-12-20 | Thomson Csf | SEMICONDUCTOR COMPONENT WITH SCHOTTKY JUNCTION FOR HYPERFREQUENCY AMPLIFICATION AND FAST LOGIC CIRCUITS, AND METHOD FOR MAKING SAME. |
US5216631A (en) * | 1990-11-02 | 1993-06-01 | Sliwa Jr John W | Microvibratory memory device |
CA2062200A1 (en) | 1991-03-15 | 1992-09-16 | Stephen C. Purcell | Decompression processor for video applications |
US5271862A (en) | 1991-07-12 | 1993-12-21 | Betz Laboratories, Inc. | Inhibition of silica and silicate deposition in cooling water systems |
US5196396A (en) | 1991-07-16 | 1993-03-23 | The President And Fellows Of Harvard College | Method of making a superconducting fullerene composition by reacting a fullerene with an alloy containing alkali metal |
US5444651A (en) | 1991-10-30 | 1995-08-22 | Sharp Kabushiki Kaisha | Non-volatile memory device |
US5290715A (en) | 1991-12-31 | 1994-03-01 | U.S. Philips Corporation | Method of making dielectrically isolated metal base transistors and permeable base transistors |
US5198390A (en) | 1992-01-16 | 1993-03-30 | Cornell Research Foundation, Inc. | RIE process for fabricating submicron, silicon electromechanical structures |
EP0895162A3 (en) | 1992-01-22 | 1999-11-10 | Enhanced Memory Systems, Inc. | Enhanced dram with embedded registers |
US5850089A (en) | 1992-03-13 | 1998-12-15 | American Research Corporation Of Virginia | Modulated-structure of PZT/PT ferroelectric thin films for non-volatile random access memories |
US5475341A (en) | 1992-06-01 | 1995-12-12 | Yale University | Sub-nanoscale electronic systems and devices |
US5651126A (en) | 1992-06-26 | 1997-07-22 | Apple Computer, Inc. | Method and apparatus for reducing transitions on computer signal lines |
US5252835A (en) | 1992-07-17 | 1993-10-12 | President And Trustees Of Harvard College | Machining oxide thin-films with an atomic force microscope: pattern and object formation on the nanometer scale |
US5591312A (en) | 1992-10-09 | 1997-01-07 | William Marsh Rice University | Process for making fullerene fibers |
DE69333551T2 (en) | 1993-02-04 | 2005-06-23 | Cornell Research Foundation, Inc. | Single mask process for making microstructures, single crystal fabrication process |
JP2541091B2 (en) | 1993-02-26 | 1996-10-09 | 日本電気株式会社 | Carbon material and its manufacturing method |
CA2118662C (en) | 1993-03-22 | 1999-07-13 | Paul A. Santeler | Memory controller having all dram address and control signals provided synchronously from a single device |
US5346683A (en) | 1993-03-26 | 1994-09-13 | Gas Research Institute | Uncapped and thinned carbon nanotubes and process |
JPH06302179A (en) | 1993-04-13 | 1994-10-28 | Casio Comput Co Ltd | Electronic equipment |
JPH0799189A (en) | 1993-04-28 | 1995-04-11 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
US5424054A (en) | 1993-05-21 | 1995-06-13 | International Business Machines Corporation | Carbon fibers and method for their production |
US5426070A (en) | 1993-05-26 | 1995-06-20 | Cornell Research Foundation, Inc. | Microstructures and high temperature isolation process for fabrication thereof |
US5456986A (en) | 1993-06-30 | 1995-10-10 | Carnegie Mellon University | Magnetic metal or metal carbide nanoparticles and a process for forming same |
US5453970A (en) | 1993-07-13 | 1995-09-26 | Rust; Thomas F. | Molecular memory medium and molecular memory disk drive for storing information using a tunnelling probe |
WO1995002709A2 (en) | 1993-07-15 | 1995-01-26 | President And Fellows Of Harvard College | EXTENDED NITRIDE MATERIAL COMPRISING β-C3N¿4? |
US5547748A (en) | 1994-01-14 | 1996-08-20 | Sri International | Carbon nanoencapsulates |
JP2526408B2 (en) | 1994-01-28 | 1996-08-21 | 工業技術院長 | Carbon nano tube continuous manufacturing method and apparatus |
US5553099A (en) | 1994-02-10 | 1996-09-03 | Racom Systems, Inc. | FSK detector for determining an increasing time period between adjacent pulses of an FSK modulated square wave pulse train |
US5444421A (en) | 1994-02-10 | 1995-08-22 | Racom Systems, Inc. | Low power consumption oscillator using multiple transconductance amplifiers |
US5521602A (en) | 1994-02-10 | 1996-05-28 | Racom Systems, Inc. | Communications system utilizing FSK/PSK modulation techniques |
US5608246A (en) | 1994-02-10 | 1997-03-04 | Ramtron International Corporation | Integration of high value capacitor with ferroelectric memory |
US5479172A (en) | 1994-02-10 | 1995-12-26 | Racom Systems, Inc. | Power supply and power enable circuit for an RF/ID transponder |
US5533061A (en) | 1994-02-10 | 1996-07-02 | Racom Systems, Inc. | Method and apparatus for detecting an FSK encoded carrier signal |
US5517194A (en) | 1994-02-10 | 1996-05-14 | Racom Systems, Inc. | Passive RF transponder and method |
US5563424A (en) | 1994-03-24 | 1996-10-08 | Uniax Corporation | Polymer grid triodes |
US6226722B1 (en) | 1994-05-19 | 2001-05-01 | International Business Machines Corporation | Integrated level two cache and controller with multiple ports, L1 bypass and concurrent accessing |
IT1270228B (en) | 1994-06-15 | 1997-04-29 | Imr Srl | STRUCTURE OF BALLASTING MACHINE FOR SHELL MOLDING MACHINES |
US5626670A (en) | 1994-10-03 | 1997-05-06 | American Research Corporation Of Virginia | Method for producing low thermal budget ferroelectric thin films for integrated device structures using laser-crystallization of spin-on sol-gel films |
US5590078A (en) | 1994-10-07 | 1996-12-31 | Mukesh Chatter | Method of and apparatus for improved dynamic random access memory (DRAM) providing increased data bandwidth and addressing range for current DRAM devices and/or equivalent bandwidth and addressing range for smaller DRAM devices |
US6100109A (en) | 1994-11-02 | 2000-08-08 | Siemens Aktiengesellschaft | Method for producing a memory device |
US5623638A (en) | 1994-11-22 | 1997-04-22 | Advanced Micro Devices, Inc. | Memory control unit with programmable edge generator to minimize delay periods for critical DRAM timing parameters |
US6203814B1 (en) | 1994-12-08 | 2001-03-20 | Hyperion Catalysis International, Inc. | Method of making functionalized nanotubes |
US5716708A (en) | 1995-01-17 | 1998-02-10 | Lagow; Richard J. | Acetylenic carbon allotrope |
US6231980B1 (en) | 1995-02-14 | 2001-05-15 | The Regents Of The University Of California | BX CY NZ nanotubes and nanoparticles |
US6063243A (en) | 1995-02-14 | 2000-05-16 | The Regents Of The Univeristy Of California | Method for making nanotubes and nanoparticles |
US5780101A (en) | 1995-02-17 | 1998-07-14 | Arizona Board Of Regents On Behalf Of The University Of Arizona | Method for producing encapsulated nanoparticles and carbon nanotubes using catalytic disproportionation of carbon monoxide |
US5747180A (en) | 1995-05-19 | 1998-05-05 | University Of Notre Dame Du Lac | Electrochemical synthesis of quasi-periodic quantum dot and nanostructure arrays |
US6190634B1 (en) | 1995-06-07 | 2001-02-20 | President And Fellows Of Harvard College | Carbide nanomaterials |
US5751156A (en) | 1995-06-07 | 1998-05-12 | Yale University | Mechanically controllable break transducer |
US5640133A (en) | 1995-06-23 | 1997-06-17 | Cornell Research Foundation, Inc. | Capacitance based tunable micromechanical resonators |
JP3285294B2 (en) | 1995-08-08 | 2002-05-27 | 太陽誘電株式会社 | Circuit module manufacturing method |
US5676865A (en) | 1995-08-25 | 1997-10-14 | Thomas & Betts Corporation | Method of and apparatus for providing welded joints |
EP1209123A3 (en) | 1995-09-08 | 2006-03-22 | William Marsh Rice University | Ropes of single-wall carbon nanotubes |
US6183714B1 (en) | 1995-09-08 | 2001-02-06 | Rice University | Method of making ropes of single-wall carbon nanotubes |
US6380434B1 (en) | 1995-10-26 | 2002-04-30 | Long Y. Chiang | Fullerene derivatives |
US5757038A (en) | 1995-11-06 | 1998-05-26 | International Business Machines Corporation | Self-aligned dual gate MOSFET with an ultranarrow channel |
CA2233655C (en) | 1995-11-27 | 2005-05-17 | The Dow Chemical Company | Supported catalyst containing tethered cation forming activator |
US6445006B1 (en) | 1995-12-20 | 2002-09-03 | Advanced Technology Materials, Inc. | Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making same |
US5872422A (en) | 1995-12-20 | 1999-02-16 | Advanced Technology Materials, Inc. | Carbon fiber-based field emission devices |
US5903723A (en) * | 1995-12-21 | 1999-05-11 | Intel Corporation | Method and apparatus for transmitting electronic mail attachments with attachment references |
US5799209A (en) | 1995-12-29 | 1998-08-25 | Chatter; Mukesh | Multi-port internally cached DRAM system utilizing independent serial interfaces and buffers arbitratively connected under a dynamic configuration |
US5897945A (en) | 1996-02-26 | 1999-04-27 | President And Fellows Of Harvard College | Metal oxide nanorods |
US6036774A (en) | 1996-02-26 | 2000-03-14 | President And Fellows Of Harvard College | Method of producing metal oxide nanorods |
US5875451A (en) | 1996-03-14 | 1999-02-23 | Enhanced Memory Systems, Inc. | Computer hybrid memory including DRAM and EDRAM memory components, with secondary cache in EDRAM for DRAM |
US5640343A (en) | 1996-03-18 | 1997-06-17 | International Business Machines Corporation | Magnetic memory array using magnetic tunnel junction devices in the memory cells |
US5650958A (en) | 1996-03-18 | 1997-07-22 | International Business Machines Corporation | Magnetic tunnel junctions with controlled magnetic response |
US5939785A (en) | 1996-04-12 | 1999-08-17 | Texas Instruments Incorporated | Micromechanical device including time-release passivant |
US5993697A (en) | 1996-05-14 | 1999-11-30 | The Regents Of The University Of California | Metallic carbon materials |
BR9710812A (en) | 1996-05-15 | 1999-08-17 | Hyperion Catalysis Int | Graphical manofibers in electrochemical capacitors |
AU4055297A (en) | 1996-08-08 | 1998-02-25 | William Marsh Rice University | Macroscopically manipulable nanoscale devices made from nanotube assemblies |
US5838165A (en) | 1996-08-21 | 1998-11-17 | Chatter; Mukesh | High performance self modifying on-the-fly alterable logic FPGA, architecture and method |
US5781717A (en) | 1996-09-19 | 1998-07-14 | I-Cube, Inc. | Dynamic spare column replacement memory system |
JPH10106960A (en) | 1996-09-25 | 1998-04-24 | Sony Corp | Manufacture of quantum thin line |
US5802583A (en) | 1996-10-30 | 1998-09-01 | Ramtron International Corporation | Sysyem and method providing selective write protection for individual blocks of memory in a non-volatile memory device |
JP3447492B2 (en) | 1996-11-12 | 2003-09-16 | 日本電気株式会社 | Carbon material and its manufacturing method |
US6025618A (en) | 1996-11-12 | 2000-02-15 | Chen; Zhi Quan | Two-parts ferroelectric RAM |
US6038060A (en) | 1997-01-16 | 2000-03-14 | Crowley; Robert Joseph | Optical antenna array for harmonic generation, mixing and signal amplification |
KR100532801B1 (en) | 1997-01-21 | 2005-12-02 | 굿리치 코포레이션 | Fabrication of a semiconductor device with air gaps for ultra-low capacitance interconnections |
EP0892942B1 (en) | 1997-02-06 | 2002-06-19 | International Business Machines Corporation | layered medium and method for creating a pattern |
US6809462B2 (en) | 2000-04-05 | 2004-10-26 | Sri International | Electroactive polymer sensors |
US5753088A (en) | 1997-02-18 | 1998-05-19 | General Motors Corporation | Method for making carbon nanotubes |
US6083293A (en) * | 1997-02-24 | 2000-07-04 | Bath; Virginia L. | Method for enhanced plant protein production and composition for use in the same |
TW419828B (en) | 1997-02-26 | 2001-01-21 | Toshiba Corp | Semiconductor integrated circuit |
US6683783B1 (en) | 1997-03-07 | 2004-01-27 | William Marsh Rice University | Carbon fibers formed from single-wall carbon nanotubes |
US6088760A (en) | 1997-03-07 | 2000-07-11 | Mitsubishi Semiconductor America, Inc. | Addressing system in a multi-port RAM having main and cache memories |
US5997832A (en) | 1997-03-07 | 1999-12-07 | President And Fellows Of Harvard College | Preparation of carbide nanorods |
JP3183845B2 (en) | 1997-03-21 | 2001-07-09 | 財団法人ファインセラミックスセンター | Method for producing carbon nanotube and carbon nanotube film |
US5946930A (en) | 1997-03-26 | 1999-09-07 | Anthony; Michael M. | Self-cooling beverage and food container using fullerene nanotubes |
US5847565A (en) | 1997-03-31 | 1998-12-08 | Council Of Scientific And Industrial Research | Logic device |
US6359288B1 (en) | 1997-04-24 | 2002-03-19 | Massachusetts Institute Of Technology | Nanowire arrays |
US5878840A (en) | 1997-05-06 | 1999-03-09 | Tessum; Mark Reed | Apparatus and method for stabilizing a scaffold assembly |
US6233665B1 (en) | 1997-05-27 | 2001-05-15 | Unisys Corporation | Mapping shared DRAM address bits by accessing data memory in page mode cache status memory in word mode |
US6049856A (en) | 1997-05-27 | 2000-04-11 | Unisys Corporation | System for simultaneously accessing two portions of a shared memory |
US5914553A (en) | 1997-06-16 | 1999-06-22 | Cornell Research Foundation, Inc. | Multistable tunable micromechanical resonators |
KR100276569B1 (en) | 1997-06-20 | 2000-12-15 | 김영환 | Ferroelectric memory device |
JPH1117035A (en) | 1997-06-24 | 1999-01-22 | Mitsubishi Electric Corp | Nonvolatile semiconductor memory and manufacture thereof |
US6069380A (en) | 1997-07-25 | 2000-05-30 | Regents Of The University Of Minnesota | Single-electron floating-gate MOS memory |
US6212597B1 (en) | 1997-07-28 | 2001-04-03 | Neonet Lllc | Apparatus for and method of architecturally enhancing the performance of a multi-port internally cached (AMPIC) DRAM array and like |
US6221330B1 (en) | 1997-08-04 | 2001-04-24 | Hyperion Catalysis International Inc. | Process for producing single wall nanotubes using unsupported metal catalysts |
DE69834673T2 (en) | 1997-09-30 | 2006-10-26 | Noritake Co., Ltd., Nagoya | Method for producing an electron-emitting source |
US5903010A (en) | 1997-10-29 | 1999-05-11 | Hewlett-Packard Company | Quantum wire switch and switching method |
US6038637A (en) | 1997-11-25 | 2000-03-14 | Nortel Networks Corporation | Universal DRAM address multiplexer |
US5928450A (en) | 1998-02-05 | 1999-07-27 | Russell; Daniel Nelson | Process of making fractal tubes |
US5946228A (en) | 1998-02-10 | 1999-08-31 | International Business Machines Corporation | Limiting magnetic writing fields to a preferred portion of a changeable magnetic region in magnetic devices |
US6104633A (en) | 1998-02-10 | 2000-08-15 | International Business Machines Corporation | Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devices |
US6072718A (en) | 1998-02-10 | 2000-06-06 | International Business Machines Corporation | Magnetic memory devices having multiple magnetic tunnel junctions therein |
TW392357B (en) | 1998-02-10 | 2000-06-01 | United Microelectronics Corp | Manufacturing method for semiconductor device and structure manufactured by the same |
US5930164A (en) | 1998-02-26 | 1999-07-27 | Motorola, Inc. | Magnetic memory unit having four states and operating method thereof |
US6528785B1 (en) | 1998-12-03 | 2003-03-04 | Daiken Chemical Co., Ltd. | Fusion-welded nanotube surface signal probe and method of attaching nanotube to probe holder |
US6262469B1 (en) | 1998-03-25 | 2001-07-17 | Advanced Micro Devices, Inc. | Capacitor for use in a capacitor divider that has a floating gate transistor as a corresponding capacitor |
JP3415038B2 (en) | 1998-03-25 | 2003-06-09 | 株式会社島津製作所 | Carbon production method |
US6138219A (en) | 1998-03-27 | 2000-10-24 | Nexabit Networks Llc | Method of and operating architectural enhancement for multi-port internally cached dynamic random access memory (AMPIC DRAM) systems, eliminating external control paths and random memory addressing, while providing zero bus contention for DRAM access |
US6703163B2 (en) | 1998-03-31 | 2004-03-09 | Celanese Ventures Gmbh | Lithium battery and electrode |
US6156256A (en) | 1998-05-13 | 2000-12-05 | Applied Sciences, Inc. | Plasma catalysis of carbon nanofibers |
US6159742A (en) | 1998-06-05 | 2000-12-12 | President And Fellows Of Harvard College | Nanometer-scale microscopy probes |
US6203864B1 (en) | 1998-06-08 | 2001-03-20 | Nec Corporation | Method of forming a heterojunction of a carbon nanotube and a different material, method of working a filament of a nanotube |
US6426134B1 (en) | 1998-06-30 | 2002-07-30 | E. I. Du Pont De Nemours And Company | Single-wall carbon nanotube-polymer composites |
ATA119098A (en) | 1998-07-09 | 1999-05-15 | Ims Ionen Mikrofab Syst | METHOD FOR PRODUCING A CARBON FILM ON A SUBSTRATE |
US6259277B1 (en) | 1998-07-27 | 2001-07-10 | University Of South Carolina | Use of molecular electrostatic potential to process electronic signals |
US7416699B2 (en) | 1998-08-14 | 2008-08-26 | The Board Of Trustees Of The Leland Stanford Junior University | Carbon nanotube devices |
US6052263A (en) | 1998-08-21 | 2000-04-18 | International Business Machines Corporation | Low moment/high coercivity pinned layer for magnetic tunnel junction sensors |
US6219212B1 (en) | 1998-09-08 | 2001-04-17 | International Business Machines Corporation | Magnetic tunnel junction head structure with insulating antiferromagnetic layer |
US6630772B1 (en) | 1998-09-21 | 2003-10-07 | Agere Systems Inc. | Device comprising carbon nanotube field emitter structure and process for forming device |
US6146227A (en) | 1998-09-28 | 2000-11-14 | Xidex Corporation | Method for manufacturing carbon nanotubes as functional elements of MEMS devices |
US6187823B1 (en) * | 1998-10-02 | 2001-02-13 | University Of Kentucky Research Foundation | Solubilizing single-walled carbon nanotubes by direct reaction with amines and alkylaryl amines |
JP2000123711A (en) | 1998-10-12 | 2000-04-28 | Toshiba Corp | Electric field emission cold cathode and manufacture thereof |
US6348700B1 (en) | 1998-10-27 | 2002-02-19 | The Mitre Corporation | Monomolecular rectifying wire and logic based thereupon |
US6237130B1 (en) | 1998-10-29 | 2001-05-22 | Nexabit Networks, Inc. | Chip layout for implementing arbitrated high speed switching access of pluralities of I/O data ports to internally cached DRAM banks and the like |
US6048740A (en) | 1998-11-05 | 2000-04-11 | Sharp Laboratories Of America, Inc. | Ferroelectric nonvolatile transistor and method of making same |
US6232706B1 (en) | 1998-11-12 | 2001-05-15 | The Board Of Trustees Of The Leland Stanford Junior University | Self-oriented bundles of carbon nanotubes and method of making same |
US6300205B1 (en) | 1998-11-18 | 2001-10-09 | Advanced Micro Devices, Inc. | Method of making a semiconductor device with self-aligned active, lightly-doped drain, and halo regions |
US6152977A (en) | 1998-11-30 | 2000-11-28 | General Electric Company | Surface functionalized diamond crystals and methods for producing same |
US6250984B1 (en) | 1999-01-25 | 2001-06-26 | Agere Systems Guardian Corp. | Article comprising enhanced nanotube emitter structure and process for fabricating article |
ES2264928T3 (en) * | 1999-02-12 | 2007-02-01 | Board Of Trustees Operating Michigan State University | NANOCAPSULES CONTAINING LOADED PARTICLES, THEIR USES AND PROCEDURES FOR THE PREPARATION OF THE SAME. |
US6280697B1 (en) | 1999-03-01 | 2001-08-28 | The University Of North Carolina-Chapel Hill | Nanotube-based high energy material and method |
JP2000268706A (en) | 1999-03-18 | 2000-09-29 | Matsushita Electric Ind Co Ltd | Electron emitting element and image drawing device using the same |
US6348295B1 (en) | 1999-03-26 | 2002-02-19 | Massachusetts Institute Of Technology | Methods for manufacturing electronic and electromechanical elements and devices by thin-film deposition and imaging |
US6314019B1 (en) * | 1999-03-29 | 2001-11-06 | Hewlett-Packard Company | Molecular-wire crossbar interconnect (MWCI) for signal routing and communications |
US6518156B1 (en) * | 1999-03-29 | 2003-02-11 | Hewlett-Packard Company | Configurable nanoscale crossbar electronic circuits made by electrochemical reaction |
US6256767B1 (en) | 1999-03-29 | 2001-07-03 | Hewlett-Packard Company | Demultiplexer for a molecular wire crossbar network (MWCN DEMUX) |
US6105381A (en) | 1999-03-31 | 2000-08-22 | International Business Machines Corporation | Method and apparatus for cooling GMR heads for magnetic hard disks |
US6331209B1 (en) | 1999-04-21 | 2001-12-18 | Jin Jang | Method of forming carbon nanotubes |
EP1052520B1 (en) | 1999-05-10 | 2005-07-27 | Hitachi Europe Limited | Magnetoelectric device |
US6177703B1 (en) | 1999-05-28 | 2001-01-23 | Vlsi Technology, Inc. | Method and apparatus for producing a single polysilicon flash EEPROM having a select transistor and a floating gate transistor |
EP1059266A3 (en) | 1999-06-11 | 2000-12-20 | Iljin Nanotech Co., Ltd. | Mass synthesis method of high purity carbon nanotubes vertically aligned over large-size substrate using thermal chemical vapor deposition |
US6361861B2 (en) | 1999-06-14 | 2002-03-26 | Battelle Memorial Institute | Carbon nanotubes on a substrate |
KR100364095B1 (en) | 1999-06-15 | 2002-12-12 | 일진나노텍 주식회사 | Massive purification method of carbon nanotubes |
KR100376197B1 (en) | 1999-06-15 | 2003-03-15 | 일진나노텍 주식회사 | Low temperature synthesis of carbon nanotubes using metal catalyst layer for decompsing carbon source gas |
ATE330905T1 (en) | 1999-06-16 | 2006-07-15 | Inst Of Metal Res Of The Chine | PRODUCTION OF SINGLE WALL CARBON NANOTUBE |
US6648711B1 (en) | 1999-06-16 | 2003-11-18 | Iljin Nanotech Co., Ltd. | Field emitter having carbon nanotube film, method of fabricating the same, and field emission display device using the field emitter |
JP2001052652A (en) | 1999-06-18 | 2001-02-23 | Cheol Jin Lee | White light source and its manufacture |
AU782000B2 (en) | 1999-07-02 | 2005-06-23 | President And Fellows Of Harvard College | Nanoscopic wire-based devices, arrays, and methods of their manufacture |
US6322713B1 (en) | 1999-07-15 | 2001-11-27 | Agere Systems Guardian Corp. | Nanoscale conductive connectors and method for making same |
EP1072693A1 (en) | 1999-07-27 | 2001-01-31 | Iljin Nanotech Co., Ltd. | Chemical vapor deposition apparatus and method of synthesizing carbon nanotubes using the apparatus |
AU6538400A (en) | 1999-08-12 | 2001-03-13 | Midwest Research Institute | Single-wall carbon nanotubes |
US6277318B1 (en) | 1999-08-18 | 2001-08-21 | Agere Systems Guardian Corp. | Method for fabrication of patterned carbon nanotube films |
US6062931A (en) | 1999-09-01 | 2000-05-16 | Industrial Technology Research Institute | Carbon nanotube emitter with triode structure |
US6166948A (en) | 1999-09-03 | 2000-12-26 | International Business Machines Corporation | Magnetic memory array with magnetic tunnel junction memory cells having flux-closed free layers |
US6325909B1 (en) | 1999-09-24 | 2001-12-04 | The Governing Council Of The University Of Toronto | Method of growth of branched carbon nanotubes and devices produced from the branched nanotubes |
AT407754B (en) | 1999-09-29 | 2001-06-25 | Electrovac | METHOD AND DEVICE FOR PRODUCING A NANOTUBE LAYER ON A SUBSTRATE |
WO2001027963A1 (en) | 1999-10-12 | 2001-04-19 | Matsushita Electric Industrial Co., Ltd. | Electron-emitting device and electron source comprising the same, field-emission image display, fluorescent lamp, and methods for producing them |
US6741019B1 (en) | 1999-10-18 | 2004-05-25 | Agere Systems, Inc. | Article comprising aligned nanowires |
AT408052B (en) | 1999-11-10 | 2001-08-27 | Electrovac | CONNECTION SYSTEM |
US6198655B1 (en) | 1999-12-10 | 2001-03-06 | The Regents Of The University Of California | Electrically addressable volatile non-volatile molecular-based switching devices |
KR20010056153A (en) | 1999-12-14 | 2001-07-04 | 구자홍 | Field emission display device and its fabrication method |
KR20010063852A (en) | 1999-12-24 | 2001-07-09 | 박종섭 | A method for forming a self aligned contact of semiconductor device |
KR100477739B1 (en) | 1999-12-30 | 2005-03-18 | 삼성에스디아이 주식회사 | Field emission device and driving method thereof |
US6584589B1 (en) | 2000-02-04 | 2003-06-24 | Hewlett-Packard Development Company, L.P. | Self-testing of magneto-resistive memory arrays |
US7335603B2 (en) | 2000-02-07 | 2008-02-26 | Vladimir Mancevski | System and method for fabricating logic devices comprising carbon nanotube transistors |
US6727105B1 (en) | 2000-02-28 | 2004-04-27 | Hewlett-Packard Development Company, L.P. | Method of fabricating an MRAM device including spin dependent tunneling junction memory cells |
US6294450B1 (en) | 2000-03-01 | 2001-09-25 | Hewlett-Packard Company | Nanoscale patterning for the formation of extensive wires |
US6495116B1 (en) | 2000-04-10 | 2002-12-17 | Lockheed Martin Corporation | Net shape manufacturing using carbon nanotubes |
US6413487B1 (en) | 2000-06-02 | 2002-07-02 | The Board Of Regents Of The University Of Oklahoma | Method and apparatus for producing carbon nanotubes |
US6443901B1 (en) | 2000-06-15 | 2002-09-03 | Koninklijke Philips Electronics N.V. | Capacitive micromachined ultrasonic transducers |
EP1170799A3 (en) | 2000-07-04 | 2009-04-01 | Infineon Technologies AG | Electronic device and method of manufacture of an electronic device |
GB2364933B (en) | 2000-07-18 | 2002-12-31 | Lg Electronics Inc | Method of horizontally growing carbon nanotubes |
DE10041378C1 (en) | 2000-08-23 | 2002-05-16 | Infineon Technologies Ag | MRAM configuration |
AU2001286655A1 (en) | 2000-08-24 | 2002-03-04 | William Marsh Rice University | Polymer-wrapped single wall carbon nanotubes |
MY128644A (en) | 2000-08-31 | 2007-02-28 | Georgia Tech Res Inst | Fabrication of semiconductor devices with air gaps for ultra low capacitance interconnections and methods of making same |
US6566983B2 (en) * | 2000-09-02 | 2003-05-20 | Lg Electronics Inc. | Saw filter using a carbon nanotube and method for manufacturing the same |
WO2002022499A1 (en) | 2000-09-18 | 2002-03-21 | President And Fellows Of Harvard College | Fabrication of nanotube microscopy tips |
US6354133B1 (en) * | 2000-10-25 | 2002-03-12 | Advanced Micro Devices, Inc. | Use of carbon nanotubes to calibrate conventional tips used in AFM |
US6548841B2 (en) * | 2000-11-09 | 2003-04-15 | Texas Instruments Incorporated | Nanomechanical switches and circuits |
EP1205436A1 (en) | 2000-11-13 | 2002-05-15 | International Business Machines Corporation | Crystals comprising single-walled carbon nanotubes |
US6400088B1 (en) | 2000-11-15 | 2002-06-04 | Trw Inc. | Infrared carbon nanotube detector |
US6423583B1 (en) | 2001-01-03 | 2002-07-23 | International Business Machines Corporation | Methodology for electrically induced selective breakdown of nanotubes |
US7052668B2 (en) | 2001-01-31 | 2006-05-30 | William Marsh Rice University | Process utilizing seeds for making single-wall carbon nanotubes |
US20020102193A1 (en) | 2001-01-31 | 2002-08-01 | William Marsh Rice University | Process utilizing two zones for making single-wall carbon nanotubes |
US6358756B1 (en) | 2001-02-07 | 2002-03-19 | Micron Technology, Inc. | Self-aligned, magnetoresistive random-access memory (MRAM) structure utilizing a spacer containment scheme |
US6448701B1 (en) | 2001-03-09 | 2002-09-10 | The United States Of America As Represented By The Secretary Of The Navy | Self-aligned integrally gated nanofilament field emitter cell and array |
US6541309B2 (en) * | 2001-03-21 | 2003-04-01 | Hewlett-Packard Development Company Lp | Fabricating a molecular electronic device having a protective barrier layer |
WO2002080360A1 (en) | 2001-03-30 | 2002-10-10 | California Institute Of Technology | Pattern-aligned carbon nanotube growth and tunable resonator apparatus |
AU2002307129A1 (en) | 2001-04-03 | 2002-10-21 | Carnegie Mellon University | Electronic circuit device, system and method |
US20020160111A1 (en) | 2001-04-25 | 2002-10-31 | Yi Sun | Method for fabrication of field emission devices using carbon nanotube film as a cathode |
WO2002095097A1 (en) | 2001-05-21 | 2002-11-28 | Trustees Of Boston College, The | Varied morphology carbon nanotubes and methods for their manufacture |
JP4207398B2 (en) | 2001-05-21 | 2009-01-14 | 富士ゼロックス株式会社 | Method for manufacturing wiring of carbon nanotube structure, wiring of carbon nanotube structure, and carbon nanotube device using the same |
US6426687B1 (en) | 2001-05-22 | 2002-07-30 | The Aerospace Corporation | RF MEMS switch |
US6858455B2 (en) | 2001-05-25 | 2005-02-22 | Ut-Battelle, Llc | Gated fabrication of nanostructure field emission cathode material within a device |
US6432740B1 (en) | 2001-06-28 | 2002-08-13 | Hewlett-Packard Company | Fabrication of molecular electronic circuit by imprinting |
US6574130B2 (en) | 2001-07-25 | 2003-06-03 | Nantero, Inc. | Hybrid circuit having nanotube electromechanical memory |
US7259410B2 (en) | 2001-07-25 | 2007-08-21 | Nantero, Inc. | Devices having horizontally-disposed nanofabric articles and methods of making the same |
US6706402B2 (en) * | 2001-07-25 | 2004-03-16 | Nantero, Inc. | Nanotube films and articles |
US6643165B2 (en) * | 2001-07-25 | 2003-11-04 | Nantero, Inc. | Electromechanical memory having cell selection circuitry constructed with nanotube technology |
US6919592B2 (en) | 2001-07-25 | 2005-07-19 | Nantero, Inc. | Electromechanical memory array using nanotube ribbons and method for making same |
US6924538B2 (en) | 2001-07-25 | 2005-08-02 | Nantero, Inc. | Devices having vertically-disposed nanofabric articles and methods of making the same |
US6849245B2 (en) * | 2001-12-11 | 2005-02-01 | Catalytic Materials Llc | Catalysts for producing narrow carbon nanostructures |
EP1468423A2 (en) | 2002-01-18 | 2004-10-20 | California Institute Of Technology | Array-based architecture for molecular electronics |
EP1341184B1 (en) | 2002-02-09 | 2005-09-14 | Samsung Electronics Co., Ltd. | Memory device utilizing carbon nanotubes and method of fabricating the memory device |
US6759693B2 (en) | 2002-06-19 | 2004-07-06 | Nantero, Inc. | Nanotube permeable base transistor |
US6809465B2 (en) | 2002-08-23 | 2004-10-26 | Samsung Electronics Co., Ltd. | Article comprising MEMS-based two-dimensional e-beam sources and method for making the same |
US7051945B2 (en) | 2002-09-30 | 2006-05-30 | Nanosys, Inc | Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites |
US6919740B2 (en) | 2003-01-31 | 2005-07-19 | Hewlett-Packard Development Company, Lp. | Molecular-junction-nanowire-crossbar-based inverter, latch, and flip-flop circuits, and more complex circuits composed, in part, from molecular-junction-nanowire-crossbar-based inverter, latch, and flip-flop circuits |
US6918284B2 (en) | 2003-03-24 | 2005-07-19 | The United States Of America As Represented By The Secretary Of The Navy | Interconnected networks of single-walled carbon nanotubes |
US7294877B2 (en) | 2003-03-28 | 2007-11-13 | Nantero, Inc. | Nanotube-on-gate FET structures and applications |
WO2005019793A2 (en) | 2003-05-14 | 2005-03-03 | Nantero, Inc. | Sensor platform using a horizontally oriented nanotube element |
US20040238907A1 (en) | 2003-06-02 | 2004-12-02 | Pinkerton Joseph F. | Nanoelectromechanical transistors and switch systems |
US7161218B2 (en) | 2003-06-09 | 2007-01-09 | Nantero, Inc. | One-time programmable, non-volatile field effect devices and methods of making same |
US6882256B1 (en) | 2003-06-20 | 2005-04-19 | Northrop Grumman Corporation | Anchorless electrostatically activated micro electromechanical system switch |
US7115960B2 (en) | 2003-08-13 | 2006-10-03 | Nantero, Inc. | Nanotube-based switching elements |
US6969651B1 (en) | 2004-03-26 | 2005-11-29 | Lsi Logic Corporation | Layout design and process to form nanotube cell for nanotube memory applications |
US7161403B2 (en) | 2004-06-18 | 2007-01-09 | Nantero, Inc. | Storage elements using nanotube switching elements |
US6955937B1 (en) | 2004-08-12 | 2005-10-18 | Lsi Logic Corporation | Carbon nanotube memory cell for integrated circuit structure with removable side spacers to permit access to memory cell and process for forming such memory cell |
US20060237799A1 (en) | 2005-04-21 | 2006-10-26 | Lsi Logic Corporation | Carbon nanotube memory cells having flat bottom electrode contact surface |
US7402770B2 (en) | 2005-06-10 | 2008-07-22 | Lsi Logic Corporation | Nano structure electrode design |
-
2001
- 2001-07-25 US US09/915,095 patent/US6574130B2/en not_active Expired - Lifetime
-
2002
- 2002-07-25 EP EP02789150A patent/EP1410552A4/en not_active Withdrawn
- 2002-07-25 WO PCT/US2002/023659 patent/WO2003021842A2/en not_active Application Discontinuation
- 2002-07-25 CA CA002454366A patent/CA2454366A1/en not_active Abandoned
- 2002-07-25 AU AU2002353769A patent/AU2002353769A1/en not_active Abandoned
-
2003
- 2003-01-10 TW TW092100453A patent/TWI240270B/en not_active IP Right Cessation
- 2003-03-05 US US10/379,973 patent/US6836424B2/en not_active Expired - Lifetime
-
2004
- 2004-10-13 US US10/964,150 patent/US7342818B2/en not_active Expired - Lifetime
-
2008
- 2008-02-13 US US12/030,470 patent/US7817458B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6159620A (en) * | 1997-03-31 | 2000-12-12 | The Regents Of The University Of California | Single-electron solid state electronic device |
US6144481A (en) * | 1998-12-18 | 2000-11-07 | Eastman Kodak Company | Method and system for actuating electro-mechanical ribbon elements in accordance to a data stream |
US6128214A (en) * | 1999-03-29 | 2000-10-03 | Hewlett-Packard | Molecular wire crossbar memory |
Also Published As
Publication number | Publication date |
---|---|
CA2454366A1 (en) | 2003-03-13 |
US7817458B2 (en) | 2010-10-19 |
EP1410552A2 (en) | 2004-04-21 |
US20050063210A1 (en) | 2005-03-24 |
US20030021141A1 (en) | 2003-01-30 |
TWI240270B (en) | 2005-09-21 |
TW200412594A (en) | 2004-07-16 |
US20030165074A1 (en) | 2003-09-04 |
WO2003021842A2 (en) | 2003-03-13 |
EP1410552A4 (en) | 2007-05-30 |
US6574130B2 (en) | 2003-06-03 |
US6836424B2 (en) | 2004-12-28 |
AU2002353769A1 (en) | 2003-03-18 |
US20080192532A1 (en) | 2008-08-14 |
US7342818B2 (en) | 2008-03-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2003021842A3 (en) | Hybrid circuit having nanotube electromechanical memory | |
WO2003023818A3 (en) | Electromechanical memory having cell selection circuitry constructed with nanotube technology | |
EP0936622A3 (en) | Magnetic memory devices having multiple magnetic tunnel junctions therein | |
EP1308958A3 (en) | Three dimensional large storage random access memory device | |
WO2003021613A3 (en) | Electromechanical memory array using nanotube ribbons and method for making same | |
AU2002243736A1 (en) | Self aligned, magnetoresitive random-access memory (mram) structure utilizing a spacer containment scheme | |
AU2002367718A1 (en) | Molehole embedded 3-d crossbar architecture used in electrochemical molecular memory device | |
WO2004044948A3 (en) | Photovoltaic devices fabricated by growth from porous template | |
EP1603136A3 (en) | Semiconductor memory device | |
WO2004105039A3 (en) | STACKED 1T-nMEMORY CELL STRUCTURE | |
EP1308961A3 (en) | Memory cell structure | |
KR920006997A (en) | Redundant Circuit | |
AU6945700A (en) | Circuit and method for a multiplexed redundancy scheme in a memory device | |
EP0926683A3 (en) | Semiconductor memory | |
TW200514094A (en) | Stacked 1t-nmemory cell structure | |
EP0905708A3 (en) | Memory circuit | |
WO2006044780A3 (en) | Scrambling method to reduce wordline coupling noise | |
WO2003023858A1 (en) | Ferroelectric memory device and its manufacturing method | |
KR920008773A (en) | Semiconductor memory | |
AU2151800A (en) | Single event upset (seu) hardened static random access memory cell | |
KR920001545A (en) | Semiconductor memory | |
AU5010200A (en) | Self-restoring single event upset (seu) hardened multiport memory cell | |
EP1577898A3 (en) | Method for reading multiple bit ROM cell | |
CA2195836A1 (en) | Semiconductor memory having main word line and subword lines provided correspondingly to the main word line | |
WO2005045935A3 (en) | Sidewall formation for high density polymer memory element array |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BY BZ CA CH CN CO CR CU CZ DE DM DZ EC EE ES FI GB GD GE GH HR HU ID IL IN IS JP KE KG KP KR LC LK LR LS LT LU LV MA MD MG MN MW MX MZ NO NZ OM PH PL PT RU SD SE SG SI SK SL TJ TM TN TR TZ UA UG UZ VN YU ZA ZM Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SI SK SL TJ TM TN TR TT TZ UA UG UZ VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): GH GM KE LS MW MZ SD SL SZ UG ZM ZW AM AZ BY KG KZ RU TJ TM AT BE BG CH CY CZ DK EE ES FI FR GB GR IE IT LU MC PT SE SK TR BF BJ CF CG CI GA GN GQ GW ML MR NE SN TD TG Kind code of ref document: A2 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LU MC NL PT SE SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2454366 Country of ref document: CA |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2002789150 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 2002789150 Country of ref document: EP |
|
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
NENP | Non-entry into the national phase |
Ref country code: JP |
|
WWW | Wipo information: withdrawn in national office |
Country of ref document: JP |