WO2003021842A3 - Hybrid circuit having nanotube electromechanical memory - Google Patents

Hybrid circuit having nanotube electromechanical memory Download PDF

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Publication number
WO2003021842A3
WO2003021842A3 PCT/US2002/023659 US0223659W WO03021842A3 WO 2003021842 A3 WO2003021842 A3 WO 2003021842A3 US 0223659 W US0223659 W US 0223659W WO 03021842 A3 WO03021842 A3 WO 03021842A3
Authority
WO
WIPO (PCT)
Prior art keywords
electromechanical memory
hybrid circuit
nanotube
circuit
memory
Prior art date
Application number
PCT/US2002/023659
Other languages
French (fr)
Other versions
WO2003021842A2 (en
Inventor
Brent M Segal
Darren K Brock
Thomas Rueckes
Original Assignee
Nantero Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nantero Inc filed Critical Nantero Inc
Priority to EP02789150A priority Critical patent/EP1410552A4/en
Priority to CA002454366A priority patent/CA2454366A1/en
Priority to AU2002353769A priority patent/AU2002353769A1/en
Priority to TW092100453A priority patent/TWI240270B/en
Publication of WO2003021842A2 publication Critical patent/WO2003021842A2/en
Publication of WO2003021842A3 publication Critical patent/WO2003021842A3/en

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Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C23/00Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2213/00Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10Resistive cells; Technology aspects
    • G11C2213/16Memory cell being a nanotube, e.g. suspended nanotube
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2213/00Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70Resistive array aspects
    • G11C2213/77Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2213/00Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70Resistive array aspects
    • G11C2213/81Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/70Nanostructure
    • Y10S977/724Devices having flexible or movable element
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/70Nanostructure
    • Y10S977/734Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/70Nanostructure
    • Y10S977/734Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/742Carbon nanotubes, CNTs
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/902Specified use of nanostructure
    • Y10S977/932Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/94Specified use of nanostructure for electronic or optoelectronic application in a logic circuit
    • Y10S977/942Specified use of nanostructure for electronic or optoelectronic application in a logic circuit including protein logic element
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/902Specified use of nanostructure
    • Y10S977/932Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943Information storage or retrieval using nanostructure

Abstract

A hybrid memory system having electromechanical memory cells (103) is disclosed. A memory cell core circuit has an array of electromechanical memory cells, in which each cell is a crossbar junction at least one element of which is a nanotube or a nanotube ribbon (101). An access circuit provides array addresses to the memory cell core circuit to select at least one corresponding cell. The access circuit is constructed of semiconductor circuit elements.
PCT/US2002/023659 2001-07-25 2002-07-25 Hybrid circuit having nanotube electromechanical memory WO2003021842A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP02789150A EP1410552A4 (en) 2001-07-25 2002-07-25 Hybrid circuit having nanotube electromechanical memory
CA002454366A CA2454366A1 (en) 2001-07-25 2002-07-25 Hybrid circuit having nanotube electromechanical memory
AU2002353769A AU2002353769A1 (en) 2001-07-25 2002-07-25 Hybrid circuit having nanotube electromechanical memory
TW092100453A TWI240270B (en) 2001-07-25 2003-01-10 Hybrid circuit having nanotube electromechanical memory

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/915,095 US6574130B2 (en) 2001-07-25 2001-07-25 Hybrid circuit having nanotube electromechanical memory
US09/915,095 2001-07-25

Publications (2)

Publication Number Publication Date
WO2003021842A2 WO2003021842A2 (en) 2003-03-13
WO2003021842A3 true WO2003021842A3 (en) 2003-05-01

Family

ID=25435209

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/023659 WO2003021842A2 (en) 2001-07-25 2002-07-25 Hybrid circuit having nanotube electromechanical memory

Country Status (6)

Country Link
US (4) US6574130B2 (en)
EP (1) EP1410552A4 (en)
AU (1) AU2002353769A1 (en)
CA (1) CA2454366A1 (en)
TW (1) TWI240270B (en)
WO (1) WO2003021842A2 (en)

Families Citing this family (174)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002341060A (en) * 2001-05-11 2002-11-27 Seiko Instruments Inc Composite electric component, main plate structure body and electronic timepiece using it
US6593666B1 (en) * 2001-06-20 2003-07-15 Ambient Systems, Inc. Energy conversion systems using nanometer scale assemblies and methods for using same
US6924538B2 (en) * 2001-07-25 2005-08-02 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US6706402B2 (en) 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US7259410B2 (en) * 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US7566478B2 (en) * 2001-07-25 2009-07-28 Nantero, Inc. Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles
US6574130B2 (en) 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US6919592B2 (en) * 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US6643165B2 (en) 2001-07-25 2003-11-04 Nantero, Inc. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US7563711B1 (en) * 2001-07-25 2009-07-21 Nantero, Inc. Method of forming a carbon nanotube-based contact to semiconductor
US6835591B2 (en) 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US7319057B2 (en) * 2001-10-30 2008-01-15 Ovonyx, Inc. Phase change material memory device
US6784028B2 (en) 2001-12-28 2004-08-31 Nantero, Inc. Methods of making electromechanical three-trace junction devices
KR100441751B1 (en) * 2001-12-28 2004-07-27 한국전자통신연구원 Method for Fabricating field emission devices
US7335395B2 (en) * 2002-04-23 2008-02-26 Nantero, Inc. Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
US7304128B2 (en) * 2002-06-04 2007-12-04 E.I. Du Pont De Nemours And Company Carbon nanotube binding peptides
JP4186727B2 (en) * 2002-07-26 2008-11-26 松下電器産業株式会社 switch
ATE426575T1 (en) 2003-01-07 2009-04-15 Univ Ramot PEPTIDE ANOSTRUCTURES CONTAINING FOREIGN MATERIAL AND METHOD FOR PRODUCING THE SAME
US7560136B2 (en) * 2003-01-13 2009-07-14 Nantero, Inc. Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
US7858185B2 (en) * 2003-09-08 2010-12-28 Nantero, Inc. High purity nanotube fabrics and films
WO2004065655A1 (en) * 2003-01-13 2004-08-05 Nantero, Inc. Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
US7294877B2 (en) 2003-03-28 2007-11-13 Nantero, Inc. Nanotube-on-gate FET structures and applications
US6944054B2 (en) 2003-03-28 2005-09-13 Nantero, Inc. NRAM bit selectable two-device nanotube array
US7075141B2 (en) 2003-03-28 2006-07-11 Nantero, Inc. Four terminal non-volatile transistor device
US7113426B2 (en) * 2003-03-28 2006-09-26 Nantero, Inc. Non-volatile RAM cell and array using nanotube switch position for information state
US6995046B2 (en) * 2003-04-22 2006-02-07 Nantero, Inc. Process for making byte erasable devices having elements made with nanotubes
US7045421B2 (en) * 2003-04-22 2006-05-16 Nantero, Inc. Process for making bit selectable devices having elements made with nanotubes
US6838721B2 (en) * 2003-04-25 2005-01-04 Freescale Semiconductor, Inc. Integrated circuit with a transitor over an interconnect layer
WO2005019793A2 (en) * 2003-05-14 2005-03-03 Nantero, Inc. Sensor platform using a horizontally oriented nanotube element
US7095645B2 (en) * 2003-06-02 2006-08-22 Ambient Systems, Inc. Nanoelectromechanical memory cells and data storage devices
US7148579B2 (en) 2003-06-02 2006-12-12 Ambient Systems, Inc. Energy conversion systems utilizing parallel array of automatic switches and generators
US7199498B2 (en) * 2003-06-02 2007-04-03 Ambient Systems, Inc. Electrical assemblies using molecular-scale electrically conductive and mechanically flexible beams and methods for application of same
US20040238907A1 (en) * 2003-06-02 2004-12-02 Pinkerton Joseph F. Nanoelectromechanical transistors and switch systems
US7274064B2 (en) * 2003-06-09 2007-09-25 Nanatero, Inc. Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
US7161218B2 (en) * 2003-06-09 2007-01-09 Nantero, Inc. One-time programmable, non-volatile field effect devices and methods of making same
US6921670B2 (en) * 2003-06-24 2005-07-26 Hewlett-Packard Development Company, Lp. Nanostructure fabrication using microbial mandrel
US7273661B2 (en) * 2003-07-02 2007-09-25 Dupont Toray Co., Ltd. Electrically conductive polyimide compositions having a carbon nanotube filler component and methods relating thereto
US7315505B2 (en) * 2003-07-14 2008-01-01 Hewlett-Packard Development Company, L.P. Storage device having a probe with plural tips
JP3731589B2 (en) * 2003-07-18 2006-01-05 ソニー株式会社 Imaging device and synchronization signal generator
JP2005045188A (en) * 2003-07-25 2005-02-17 Fuji Xerox Co Ltd Electronic element and integrated circuit, and manufacturing method therefor
US7376008B2 (en) 2003-08-07 2008-05-20 Contour Seminconductor, Inc. SCR matrix storage device
US7416019B2 (en) * 2003-08-13 2008-08-26 The Johns Hopkins University Thermal interface and switch using carbon nanotube arrays
US7173314B2 (en) * 2003-08-13 2007-02-06 Hewlett-Packard Development Company, L.P. Storage device having a probe and a storage cell with moveable parts
US7289357B2 (en) 2003-08-13 2007-10-30 Nantero, Inc. Isolation structure for deflectable nanotube elements
JP2007502545A (en) * 2003-08-13 2007-02-08 ナンテロ,インク. Nanotube-based exchange element with a plurality of control devices and circuit produced from said element
WO2005017967A2 (en) 2003-08-13 2005-02-24 Nantero, Inc. Nanotube device structure and methods of fabrication
US7115960B2 (en) * 2003-08-13 2006-10-03 Nantero, Inc. Nanotube-based switching elements
WO2005084164A2 (en) * 2003-08-13 2005-09-15 Nantero, Inc. Nanotube-based switching elements and logic circuits
US7416993B2 (en) * 2003-09-08 2008-08-26 Nantero, Inc. Patterned nanowire articles on a substrate and methods of making the same
US7375369B2 (en) * 2003-09-08 2008-05-20 Nantero, Inc. Spin-coatable liquid for formation of high purity nanotube films
US7504051B2 (en) * 2003-09-08 2009-03-17 Nantero, Inc. Applicator liquid for use in electronic manufacturing processes
JP4412052B2 (en) * 2003-10-28 2010-02-10 富士ゼロックス株式会社 Composite material and method for producing the same
JP2005235728A (en) * 2003-12-01 2005-09-02 Fuji Xerox Co Ltd Electrical component, electrical apparatus, and their manufacturing method
WO2005069789A2 (en) * 2003-12-18 2005-08-04 Clemson University Process for separating metallic from semiconducting single-walled carbon nanotubes
US7034332B2 (en) 2004-01-27 2006-04-25 Hewlett-Packard Development Company, L.P. Nanometer-scale memory device utilizing self-aligned rectifying elements and method of making
US7528437B2 (en) * 2004-02-11 2009-05-05 Nantero, Inc. EEPROMS using carbon nanotubes for cell storage
US20050218397A1 (en) * 2004-04-06 2005-10-06 Availableip.Com NANO-electronics for programmable array IC
US20060086994A1 (en) * 2004-05-14 2006-04-27 Susanne Viefers Nanoelectromechanical components
CA2567156A1 (en) * 2004-05-17 2006-07-20 Cambrios Technology Corp. Biofabrication of transistors including field effect transistors
US7352608B2 (en) * 2004-05-24 2008-04-01 Trustees Of Boston University Controllable nanomechanical memory element
US8075863B2 (en) 2004-05-26 2011-12-13 Massachusetts Institute Of Technology Methods and devices for growth and/or assembly of nanostructures
US7658869B2 (en) * 2004-06-03 2010-02-09 Nantero, Inc. Applicator liquid containing ethyl lactate for preparation of nanotube films
US7556746B2 (en) * 2004-06-03 2009-07-07 Nantero, Inc. Method of making an applicator liquid for electronics fabrication process
US7709880B2 (en) * 2004-06-09 2010-05-04 Nantero, Inc. Field effect devices having a gate controlled via a nanotube switching element
US7288970B2 (en) * 2004-06-18 2007-10-30 Nantero, Inc. Integrated nanotube and field effect switching device
US7167026B2 (en) * 2004-06-18 2007-01-23 Nantero, Inc. Tri-state circuit using nanotube switching elements
US7330709B2 (en) * 2004-06-18 2008-02-12 Nantero, Inc. Receiver circuit using nanotube-based switches and logic
US7164744B2 (en) * 2004-06-18 2007-01-16 Nantero, Inc. Nanotube-based logic driver circuits
US7161403B2 (en) * 2004-06-18 2007-01-09 Nantero, Inc. Storage elements using nanotube switching elements
US7652342B2 (en) 2004-06-18 2010-01-26 Nantero, Inc. Nanotube-based transfer devices and related circuits
US7329931B2 (en) * 2004-06-18 2008-02-12 Nantero, Inc. Receiver circuit using nanotube-based switches and transistors
CN101010793B (en) * 2004-06-30 2011-09-28 Nxp股份有限公司 Method for manufacturing an electric device with a layer of conductive material contacted by nanowire
EP1805869A2 (en) 2004-07-19 2007-07-11 Ambient Systems, Inc. Nanometer-scale electrostatic and electromagnetic motors and generators
TWI399864B (en) * 2004-09-16 2013-06-21 Nantero Inc Light emitters using nanotubes and methods of making same
CA2581058C (en) * 2004-09-21 2012-06-26 Nantero, Inc. Resistive elements using carbon nanotubes
CA2581248A1 (en) 2004-09-22 2006-12-28 Nantero, Inc. Random access memory including nanotube switching elements
WO2006137926A2 (en) * 2004-11-02 2006-12-28 Nantero, Inc. Nanotube esd protective devices and corresponding nonvolatile and volatile nanotube switches
US20100147657A1 (en) * 2004-11-02 2010-06-17 Nantero, Inc. Nanotube esd protective devices and corresponding nonvolatile and volatile nanotube switches
US20060092695A1 (en) * 2004-11-02 2006-05-04 Wing Malcolm J Hybrid memory array with single cycle access
KR101536669B1 (en) 2004-11-09 2015-07-15 더 보드 오브 리전츠 오브 더 유니버시티 오브 텍사스 시스템 The fabrication and application of nanofiber ribbons and sheets and twisted and non-twisted nanofiber yarns
WO2006065937A2 (en) * 2004-12-16 2006-06-22 Nantero, Inc. Aqueous carbon nanotube applicator liquids and methods for producing applicator liquids thereof
US7598544B2 (en) * 2005-01-14 2009-10-06 Nanotero, Inc. Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same
US8362525B2 (en) * 2005-01-14 2013-01-29 Nantero Inc. Field effect device having a channel of nanofabric and methods of making same
US7824946B1 (en) 2005-03-11 2010-11-02 Nantero, Inc. Isolated metal plug process for use in fabricating carbon nanotube memory cells
US9390790B2 (en) 2005-04-05 2016-07-12 Nantero Inc. Carbon based nonvolatile cross point memory incorporating carbon based diode select devices and MOSFET select devices for memory and logic applications
US9287356B2 (en) * 2005-05-09 2016-03-15 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US20060237799A1 (en) * 2005-04-21 2006-10-26 Lsi Logic Corporation Carbon nanotube memory cells having flat bottom electrode contact surface
US7479654B2 (en) * 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
US8513768B2 (en) * 2005-05-09 2013-08-20 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8217490B2 (en) * 2005-05-09 2012-07-10 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7394687B2 (en) * 2005-05-09 2008-07-01 Nantero, Inc. Non-volatile-shadow latch using a nanotube switch
US9196615B2 (en) * 2005-05-09 2015-11-24 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US9911743B2 (en) * 2005-05-09 2018-03-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
TWI324773B (en) * 2005-05-09 2010-05-11 Nantero Inc Non-volatile shadow latch using a nanotube switch
US7835170B2 (en) * 2005-05-09 2010-11-16 Nantero, Inc. Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
US8013363B2 (en) * 2005-05-09 2011-09-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8183665B2 (en) * 2005-11-15 2012-05-22 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7781862B2 (en) 2005-05-09 2010-08-24 Nantero, Inc. Two-terminal nanotube devices and systems and methods of making same
US7598127B2 (en) * 2005-05-12 2009-10-06 Nantero, Inc. Nanotube fuse structure
US7575693B2 (en) * 2005-05-23 2009-08-18 Nantero, Inc. Method of aligning nanotubes and wires with an etched feature
US7541216B2 (en) * 2005-06-09 2009-06-02 Nantero, Inc. Method of aligning deposited nanotubes onto an etched feature using a spacer
US7402770B2 (en) * 2005-06-10 2008-07-22 Lsi Logic Corporation Nano structure electrode design
JP5054936B2 (en) * 2005-06-22 2012-10-24 パナソニック株式会社 Electromechanical memory, electric circuit using the same, and driving method of electromechanical memory
JP5019192B2 (en) * 2005-06-24 2012-09-05 株式会社東芝 Semiconductor device
US7538040B2 (en) 2005-06-30 2009-05-26 Nantero, Inc. Techniques for precision pattern transfer of carbon nanotubes from photo mask to wafers
EP1910217A2 (en) * 2005-07-19 2008-04-16 PINKERTON, Joseph P. Heat activated nanometer-scale pump
US7612424B1 (en) 2005-07-22 2009-11-03 Northwestern University Nanoelectromechanical bistable cantilever device
KR100682952B1 (en) * 2005-08-31 2007-02-15 삼성전자주식회사 Nano-elastic memory device and method of manufacturing the same
ATE518131T1 (en) * 2005-09-06 2011-08-15 Nantero Inc NANOTUBE-BASED SENSOR SYSTEM AND METHOD FOR USE THEREOF
US7850778B2 (en) * 2005-09-06 2010-12-14 Lemaire Charles A Apparatus and method for growing fullerene nanotube forests, and forming nanotube films, threads and composite structures therefrom
WO2008054364A2 (en) 2005-09-06 2008-05-08 Nantero, Inc. Carbon nanotubes for the selective transfer of heat from electronics
US7744793B2 (en) 2005-09-06 2010-06-29 Lemaire Alexander B Apparatus and method for growing fullerene nanotube forests, and forming nanotube films, threads and composite structures therefrom
JP4599256B2 (en) * 2005-09-09 2010-12-15 株式会社東芝 Magnetic switching element and signal processing apparatus using the same
US7446044B2 (en) * 2005-09-19 2008-11-04 California Institute Of Technology Carbon nanotube switches for memory, RF communications and sensing applications, and methods of making the same
US7885103B2 (en) 2005-11-22 2011-02-08 Agate Logic, Inc. Non-volatile electromechanical configuration bit array
US8063455B2 (en) * 2005-11-22 2011-11-22 Agate Logic, Inc. Multi-terminal electromechanical nanocsopic switching device with control and release electrodes
US7385839B2 (en) * 2005-12-01 2008-06-10 International Business Machines Corporation Memory devices using carbon nanotube (CNT) technologies
US20070126001A1 (en) * 2005-12-05 2007-06-07 Sung-Yool Choi Organic semiconductor device and method of fabricating the same
US7786465B2 (en) * 2005-12-20 2010-08-31 Invention Science Fund 1, Llc Deletable nanotube circuit
US8264137B2 (en) 2006-01-03 2012-09-11 Samsung Electronics Co., Ltd. Curing binder material for carbon nanotube electron emission cathodes
DE102006004218B3 (en) * 2006-01-30 2007-08-16 Infineon Technologies Ag Electromechanical storage device and method for manufacturing an electromechanical storage device
US20070183189A1 (en) * 2006-02-08 2007-08-09 Thomas Nirschl Memory having nanotube transistor access device
US7564262B2 (en) * 2006-04-03 2009-07-21 Blaise Laurent Mouttet Crossbar comparator
US20070233761A1 (en) * 2006-04-03 2007-10-04 Mouttet Blaise L Crossbar arithmetic processor
US8183554B2 (en) * 2006-04-03 2012-05-22 Blaise Laurent Mouttet Symmetrical programmable memresistor crossbar structure
US9965251B2 (en) * 2006-04-03 2018-05-08 Blaise Laurent Mouttet Crossbar arithmetic and summation processor
US7576565B2 (en) * 2006-04-03 2009-08-18 Blaise Laurent Mouttet Crossbar waveform driver circuit
US7609086B2 (en) * 2006-04-03 2009-10-27 Blaise Laurent Mouttet Crossbar control circuit
US7302513B2 (en) * 2006-04-03 2007-11-27 Blaise Laurent Mouttet Programmable crossbar signal processor
KR100790822B1 (en) * 2006-08-07 2008-01-02 삼성전자주식회사 Non volatic memory device and method manufacturing the same
EP2057633B1 (en) 2006-08-08 2013-03-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8945970B2 (en) * 2006-09-22 2015-02-03 Carnegie Mellon University Assembling and applying nano-electro-mechanical systems
KR100827705B1 (en) * 2006-10-23 2008-05-07 삼성전자주식회사 on volatic memory device and method manufacturing the same
US7619919B2 (en) * 2007-01-12 2009-11-17 Marvell World Trade Ltd. Multi-level memory
US20080192014A1 (en) * 2007-02-08 2008-08-14 Tyco Electronics Corporation Touch screen using carbon nanotube electrodes
WO2008127780A2 (en) * 2007-02-21 2008-10-23 Nantero, Inc. Symmetric touch screen system with carbon nanotube-based transparent conductive electrode pairs
US7839028B2 (en) * 2007-04-03 2010-11-23 CJP IP Holding, Ltd. Nanoelectromechanical systems and methods for making the same
WO2009002748A1 (en) * 2007-06-22 2008-12-31 Nantero, Inc. Two-terminal nanotube devices including a nanotube bridge and methods of making same
US7701013B2 (en) * 2007-07-10 2010-04-20 International Business Machines Corporation Nanoelectromechanical transistors and methods of forming same
US7550354B2 (en) * 2007-07-11 2009-06-23 International Business Machines Corporation Nanoelectromechanical transistors and methods of forming same
EA020950B1 (en) * 2007-09-17 2015-03-31 Баррик Гольд Корпорейшн Method to improve recovery of gold from double refractory gold ores
US8262770B2 (en) 2007-09-18 2012-09-11 Barrick Gold Corporation Process for controlling acid in sulfide pressure oxidation processes
WO2009037594A2 (en) * 2007-09-18 2009-03-26 Barrick Gold Corporation Process for recovering gold and silver from refractory ores
WO2009076534A1 (en) * 2007-12-11 2009-06-18 Cornell University Resonant body transistor and oscillator
US8009461B2 (en) * 2008-01-07 2011-08-30 International Business Machines Corporation SRAM device, and SRAM device design structure, with adaptable access transistors
US7929341B2 (en) 2008-03-24 2011-04-19 Samsung Electronics Co., Ltd. Electromechanical switch and method of forming the same
US7612270B1 (en) * 2008-04-09 2009-11-03 International Business Machines Corporation Nanoelectromechanical digital inverter
US7812335B2 (en) * 2008-04-11 2010-10-12 Sandisk 3D Llc Sidewall structured switchable resistor cell
US8048474B2 (en) * 2008-04-11 2011-11-01 Sandisk 3D Llc Method of making nonvolatile memory cell containing carbon resistivity switching as a storage element by low temperature processing
US7830698B2 (en) * 2008-04-11 2010-11-09 Sandisk 3D Llc Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
US7723180B2 (en) * 2008-04-11 2010-05-25 Sandisk 3D Llc Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
US7859887B2 (en) * 2008-04-11 2010-12-28 Sandisk 3D Llc Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
US20090256217A1 (en) * 2008-04-14 2009-10-15 Lsi Logic Corporation Carbon nanotube memory cells having flat bottom electrode contact surface
US8586961B2 (en) 2008-05-09 2013-11-19 The Board Of Trustees Of The University Of Illinois Resistive changing device
US9263126B1 (en) 2010-09-01 2016-02-16 Nantero Inc. Method for dynamically accessing and programming resistive change element arrays
US8319205B2 (en) * 2008-08-14 2012-11-27 Nantero Inc. Nonvolatile nanotube programmable logic devices and a nonvolatile nanotube field programmable gate array using same
US7897954B2 (en) * 2008-10-10 2011-03-01 Macronix International Co., Ltd. Dielectric-sandwiched pillar memory device
KR20100062609A (en) 2008-12-02 2010-06-10 삼성전자주식회사 Micro-electro mechanical system, memory device including the same and method of manufacturing the same
WO2010144097A1 (en) * 2009-06-12 2010-12-16 Hewlett-Packard Development Company, L.P. Hierarchical on-chip memory
US8253171B1 (en) 2009-08-27 2012-08-28 Lockheed Martin Corporation Two terminal nanotube switch, memory array incorporating the same and method of making
US8350360B1 (en) 2009-08-28 2013-01-08 Lockheed Martin Corporation Four-terminal carbon nanotube capacitors
US20110056812A1 (en) * 2009-09-08 2011-03-10 Kaul Anupama B Nano-electro-mechanical switches using three-dimensional sidewall-conductive carbon nanofibers and method for making the same
US8435798B2 (en) * 2010-01-13 2013-05-07 California Institute Of Technology Applications and methods of operating a three-dimensional nano-electro-mechanical resonator and related devices
US7982504B1 (en) 2010-01-29 2011-07-19 Hewlett Packard Development Company, L.P. Interconnection architecture for multilayer circuits
US9324718B2 (en) 2010-01-29 2016-04-26 Hewlett Packard Enterprise Development Lp Three dimensional multilayer circuit
US8405189B1 (en) 2010-02-08 2013-03-26 Lockheed Martin Corporation Carbon nanotube (CNT) capacitors and devices integrated with CNT capacitors
US8164946B2 (en) * 2010-07-20 2012-04-24 Tdk Corporation Magnetic memory element, magnetic memory device, information recording/reproducing apparatus
US8125824B1 (en) 2010-09-02 2012-02-28 Lockheed Martin Corporation Nanotube random access memory (NRAM) and transistor integration
US10069072B2 (en) 2010-09-20 2018-09-04 Nantero, Inc. Nanotube solutions with high concentration and low contamination and methods for purifiying nanotube solutions
US9324422B2 (en) 2011-04-18 2016-04-26 The Board Of Trustees Of The University Of Illinois Adaptive resistive device and methods thereof
US9196766B1 (en) 2012-04-25 2015-11-24 Magnolia Optical Technologies, Inc. Thermal detectors using graphene and oxides of graphene and methods of making the same
US9412442B2 (en) 2012-04-27 2016-08-09 The Board Of Trustees Of The University Of Illinois Methods for forming a nanowire and apparatus thereof
US9893731B1 (en) * 2012-12-11 2018-02-13 Lockheed Martin Corporation Programmable application-specific integrated circuit
WO2018037881A1 (en) * 2016-08-25 2018-03-01 日本電気株式会社 Flexible electrode and sensor element

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6128214A (en) * 1999-03-29 2000-10-03 Hewlett-Packard Molecular wire crossbar memory
US6144481A (en) * 1998-12-18 2000-11-07 Eastman Kodak Company Method and system for actuating electro-mechanical ribbon elements in accordance to a data stream
US6159620A (en) * 1997-03-31 2000-12-12 The Regents Of The University Of California Single-electron solid state electronic device

Family Cites Families (281)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6198A (en) 1849-03-20 Cookufg-kaetgb
US90331A (en) * 1869-05-18 corse
US55010A (en) * 1866-05-22 Improvement in heddle-motions for looms
US655A (en) 1838-03-24 Combined parlor and kitchen fireplace
US61441A (en) * 1867-01-22 Isaac v
US88938A (en) * 1869-04-13 Improvement in drive-wheels for harvesters
US23986A (en) * 1859-05-10 merrill
US6159A (en) 1849-03-10 Let-off motion of looms
US6128A (en) 1849-02-20 Short slide-valve by chamfering corners
US3448302A (en) 1966-06-16 1969-06-03 Itt Operating circuit for phase change memory devices
US3892690A (en) 1970-08-25 1975-07-01 Cities Service Co Method of preparing polyethylene foam
FR2115034B1 (en) 1970-11-24 1973-11-23 Sescosem
US3892890A (en) 1972-05-12 1975-07-01 Hitachi Ltd Process for forming carbon coatings
US3970887A (en) * 1974-06-19 1976-07-20 Micro-Bit Corporation Micro-structure field emission electron source
US5032538A (en) 1979-08-10 1991-07-16 Massachusetts Institute Of Technology Semiconductor embedded layer technology utilizing selective epitaxial growth methods
US4378629A (en) 1979-08-10 1983-04-05 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor, fabrication method
US4324814A (en) 1981-03-19 1982-04-13 Rca Corporation Method for forming a narrow thin film line
US4524431A (en) 1982-02-01 1985-06-18 Texas Instruments Incorporated High-speed nonvolatile memory array
US4495511A (en) * 1982-08-23 1985-01-22 The United States Of America As Represented By The Secretary Of The Navy Permeable base transistor structure
US4510016A (en) 1982-12-09 1985-04-09 Gte Laboratories Method of fabricating submicron silicon structures such as permeable base transistors
US4495551A (en) 1983-08-17 1985-01-22 Halkey-Roberts Corporation Conductor tube for flashlights
US4707197A (en) 1984-08-02 1987-11-17 American Telephone And Telegraph Company, At&T Bell Laboratories Method of producing a silicide/Si heteroepitaxial structure, and articles produced by the method
JPS6177199A (en) 1984-09-21 1986-04-19 Toshiba Corp Semiconductor memory
JPS6194042A (en) 1984-10-16 1986-05-12 Matsushita Electric Ind Co Ltd Molecular construction and its manufacture
JPS61121369A (en) 1984-11-19 1986-06-09 Fujitsu Ltd Semiconductor device
US4901121A (en) 1985-03-29 1990-02-13 American Telephone & Telegraph Co., At&T Bell Labs. Semiconductor device comprising a perforated metal silicide layer
US4701842A (en) 1985-10-04 1987-10-20 International Business Machines Corporation Method and apparatus for avoiding excessive delay in a pipelined processor during the execution of a microbranch instruction
JPS6284495A (en) * 1985-10-08 1987-04-17 Nippon Texas Instr Kk Semiconductor memory device
US5311214A (en) * 1985-11-08 1994-05-10 Canon Kabushiki Kaisha Ink jet recording apparatus having means for removing foreign material from an ink supply path by first introducing an into the ink supply path
US4758534A (en) 1985-11-13 1988-07-19 Bell Communications Research, Inc. Process for producing porous refractory metal layers embedded in semiconductor devices
US4819212A (en) 1986-05-31 1989-04-04 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device with readout test circuitry
US4761801A (en) 1986-06-18 1988-08-02 Hughes Aircraft Company Look ahead terminal counter
US4939556A (en) 1986-07-10 1990-07-03 Canon Kabushiki Kaisha Conductor device
US4845533A (en) 1986-08-22 1989-07-04 Energy Conversion Devices, Inc. Thin film electrical devices with amorphous carbon electrodes and method of making same
CH670914A5 (en) 1986-09-10 1989-07-14 Landis & Gyr Ag
US4876667A (en) 1987-06-22 1989-10-24 Energy Conversion Devices, Inc. Data storage device having a phase change memory medium reversible by direct overwrite
US4924436A (en) 1987-06-22 1990-05-08 Energy Conversion Devices, Inc. Data storage device having a phase change memory medium reversible by direct overwrite and method of direct overwrite
US4853893A (en) 1987-07-02 1989-08-01 Ramtron Corporation Data storage device and method of using a ferroelectric capacitance divider
EP0315392A3 (en) 1987-11-05 1990-09-12 Energy Conversion Devices, Inc. Data storage device having an encapsulated phase change memory medium and means for suppressing ablation thereof
US4947226A (en) 1987-12-08 1990-08-07 Hoenywell, Inc. Bilateral switching device
US5155561A (en) 1988-01-05 1992-10-13 Massachusetts Institute Of Technology Permeable base transistor having an electrode configuration for heat dissipation
US5184320A (en) 1988-02-12 1993-02-02 Texas Instruments Incorporated Cached random access memory device and system
US4888630A (en) 1988-03-21 1989-12-19 Texas Instruments Incorporated Floating-gate transistor with a non-linear intergate dielectric
GB8807225D0 (en) 1988-03-25 1988-04-27 Hughes Microelectronics Ltd Nonvolatile ram cell
US5198994A (en) 1988-08-31 1993-03-30 Kabushiki Kaisha Toshiba Ferroelectric memory device
US5010037A (en) 1988-10-14 1991-04-23 California Institute Of Technology Pinhole-free growth of epitaxial CoSi2 film on Si(111)
US5592642A (en) 1988-12-22 1997-01-07 Framdrive Ferroelectric storage device emulating a rotating disk drive unit in a computer system and having an optical and parallel data interface
US5592644A (en) 1988-12-22 1997-01-07 Framdrive Ferroelectric storage device emulating a rotating disk drive unit in a computer system and having an optical data interface
US5592643A (en) 1988-12-22 1997-01-07 Framdrive Ferroelectric storage device emulating a rotating disk drive unit in acomputer system and having a parallel data interface
US5089545A (en) 1989-02-12 1992-02-18 Biotech International, Inc. Switching and memory elements from polyamino acids and the method of their assembly
GB8907045D0 (en) 1989-03-29 1989-05-10 Hughes Microelectronics Ltd Sense amplifier
JPH02296372A (en) 1989-05-10 1990-12-06 Mitsubishi Electric Corp Transmissive base transistor
US6346413B1 (en) 1989-06-07 2002-02-12 Affymetrix, Inc. Polymer arrays
US4985871A (en) 1989-11-13 1991-01-15 Chips And Technologies, Inc. Memory controller for using reserved dram addresses for expanded memory space
US5161218A (en) 1989-11-13 1992-11-03 Chips And Technologies, Inc. Memory controller for using reserved DRAM addresses for EMS
DE4025269A1 (en) 1990-02-07 1991-08-08 Forschungszentrum Juelich Gmbh ELECTRONIC COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
US5412785A (en) 1990-04-09 1995-05-02 Motorola, Inc. Microprogrammed data processor which includes a microsequencer in which a next microaddress output of a microROM is connected to the or-plane of an entry PLA
FR2663466A1 (en) 1990-06-15 1991-12-20 Thomson Csf SEMICONDUCTOR COMPONENT WITH SCHOTTKY JUNCTION FOR HYPERFREQUENCY AMPLIFICATION AND FAST LOGIC CIRCUITS, AND METHOD FOR MAKING SAME.
US5216631A (en) * 1990-11-02 1993-06-01 Sliwa Jr John W Microvibratory memory device
CA2062200A1 (en) 1991-03-15 1992-09-16 Stephen C. Purcell Decompression processor for video applications
US5271862A (en) 1991-07-12 1993-12-21 Betz Laboratories, Inc. Inhibition of silica and silicate deposition in cooling water systems
US5196396A (en) 1991-07-16 1993-03-23 The President And Fellows Of Harvard College Method of making a superconducting fullerene composition by reacting a fullerene with an alloy containing alkali metal
US5444651A (en) 1991-10-30 1995-08-22 Sharp Kabushiki Kaisha Non-volatile memory device
US5290715A (en) 1991-12-31 1994-03-01 U.S. Philips Corporation Method of making dielectrically isolated metal base transistors and permeable base transistors
US5198390A (en) 1992-01-16 1993-03-30 Cornell Research Foundation, Inc. RIE process for fabricating submicron, silicon electromechanical structures
EP0895162A3 (en) 1992-01-22 1999-11-10 Enhanced Memory Systems, Inc. Enhanced dram with embedded registers
US5850089A (en) 1992-03-13 1998-12-15 American Research Corporation Of Virginia Modulated-structure of PZT/PT ferroelectric thin films for non-volatile random access memories
US5475341A (en) 1992-06-01 1995-12-12 Yale University Sub-nanoscale electronic systems and devices
US5651126A (en) 1992-06-26 1997-07-22 Apple Computer, Inc. Method and apparatus for reducing transitions on computer signal lines
US5252835A (en) 1992-07-17 1993-10-12 President And Trustees Of Harvard College Machining oxide thin-films with an atomic force microscope: pattern and object formation on the nanometer scale
US5591312A (en) 1992-10-09 1997-01-07 William Marsh Rice University Process for making fullerene fibers
DE69333551T2 (en) 1993-02-04 2005-06-23 Cornell Research Foundation, Inc. Single mask process for making microstructures, single crystal fabrication process
JP2541091B2 (en) 1993-02-26 1996-10-09 日本電気株式会社 Carbon material and its manufacturing method
CA2118662C (en) 1993-03-22 1999-07-13 Paul A. Santeler Memory controller having all dram address and control signals provided synchronously from a single device
US5346683A (en) 1993-03-26 1994-09-13 Gas Research Institute Uncapped and thinned carbon nanotubes and process
JPH06302179A (en) 1993-04-13 1994-10-28 Casio Comput Co Ltd Electronic equipment
JPH0799189A (en) 1993-04-28 1995-04-11 Mitsubishi Electric Corp Manufacture of semiconductor device
US5424054A (en) 1993-05-21 1995-06-13 International Business Machines Corporation Carbon fibers and method for their production
US5426070A (en) 1993-05-26 1995-06-20 Cornell Research Foundation, Inc. Microstructures and high temperature isolation process for fabrication thereof
US5456986A (en) 1993-06-30 1995-10-10 Carnegie Mellon University Magnetic metal or metal carbide nanoparticles and a process for forming same
US5453970A (en) 1993-07-13 1995-09-26 Rust; Thomas F. Molecular memory medium and molecular memory disk drive for storing information using a tunnelling probe
WO1995002709A2 (en) 1993-07-15 1995-01-26 President And Fellows Of Harvard College EXTENDED NITRIDE MATERIAL COMPRISING β-C3N¿4?
US5547748A (en) 1994-01-14 1996-08-20 Sri International Carbon nanoencapsulates
JP2526408B2 (en) 1994-01-28 1996-08-21 工業技術院長 Carbon nano tube continuous manufacturing method and apparatus
US5553099A (en) 1994-02-10 1996-09-03 Racom Systems, Inc. FSK detector for determining an increasing time period between adjacent pulses of an FSK modulated square wave pulse train
US5444421A (en) 1994-02-10 1995-08-22 Racom Systems, Inc. Low power consumption oscillator using multiple transconductance amplifiers
US5521602A (en) 1994-02-10 1996-05-28 Racom Systems, Inc. Communications system utilizing FSK/PSK modulation techniques
US5608246A (en) 1994-02-10 1997-03-04 Ramtron International Corporation Integration of high value capacitor with ferroelectric memory
US5479172A (en) 1994-02-10 1995-12-26 Racom Systems, Inc. Power supply and power enable circuit for an RF/ID transponder
US5533061A (en) 1994-02-10 1996-07-02 Racom Systems, Inc. Method and apparatus for detecting an FSK encoded carrier signal
US5517194A (en) 1994-02-10 1996-05-14 Racom Systems, Inc. Passive RF transponder and method
US5563424A (en) 1994-03-24 1996-10-08 Uniax Corporation Polymer grid triodes
US6226722B1 (en) 1994-05-19 2001-05-01 International Business Machines Corporation Integrated level two cache and controller with multiple ports, L1 bypass and concurrent accessing
IT1270228B (en) 1994-06-15 1997-04-29 Imr Srl STRUCTURE OF BALLASTING MACHINE FOR SHELL MOLDING MACHINES
US5626670A (en) 1994-10-03 1997-05-06 American Research Corporation Of Virginia Method for producing low thermal budget ferroelectric thin films for integrated device structures using laser-crystallization of spin-on sol-gel films
US5590078A (en) 1994-10-07 1996-12-31 Mukesh Chatter Method of and apparatus for improved dynamic random access memory (DRAM) providing increased data bandwidth and addressing range for current DRAM devices and/or equivalent bandwidth and addressing range for smaller DRAM devices
US6100109A (en) 1994-11-02 2000-08-08 Siemens Aktiengesellschaft Method for producing a memory device
US5623638A (en) 1994-11-22 1997-04-22 Advanced Micro Devices, Inc. Memory control unit with programmable edge generator to minimize delay periods for critical DRAM timing parameters
US6203814B1 (en) 1994-12-08 2001-03-20 Hyperion Catalysis International, Inc. Method of making functionalized nanotubes
US5716708A (en) 1995-01-17 1998-02-10 Lagow; Richard J. Acetylenic carbon allotrope
US6231980B1 (en) 1995-02-14 2001-05-15 The Regents Of The University Of California BX CY NZ nanotubes and nanoparticles
US6063243A (en) 1995-02-14 2000-05-16 The Regents Of The Univeristy Of California Method for making nanotubes and nanoparticles
US5780101A (en) 1995-02-17 1998-07-14 Arizona Board Of Regents On Behalf Of The University Of Arizona Method for producing encapsulated nanoparticles and carbon nanotubes using catalytic disproportionation of carbon monoxide
US5747180A (en) 1995-05-19 1998-05-05 University Of Notre Dame Du Lac Electrochemical synthesis of quasi-periodic quantum dot and nanostructure arrays
US6190634B1 (en) 1995-06-07 2001-02-20 President And Fellows Of Harvard College Carbide nanomaterials
US5751156A (en) 1995-06-07 1998-05-12 Yale University Mechanically controllable break transducer
US5640133A (en) 1995-06-23 1997-06-17 Cornell Research Foundation, Inc. Capacitance based tunable micromechanical resonators
JP3285294B2 (en) 1995-08-08 2002-05-27 太陽誘電株式会社 Circuit module manufacturing method
US5676865A (en) 1995-08-25 1997-10-14 Thomas & Betts Corporation Method of and apparatus for providing welded joints
EP1209123A3 (en) 1995-09-08 2006-03-22 William Marsh Rice University Ropes of single-wall carbon nanotubes
US6183714B1 (en) 1995-09-08 2001-02-06 Rice University Method of making ropes of single-wall carbon nanotubes
US6380434B1 (en) 1995-10-26 2002-04-30 Long Y. Chiang Fullerene derivatives
US5757038A (en) 1995-11-06 1998-05-26 International Business Machines Corporation Self-aligned dual gate MOSFET with an ultranarrow channel
CA2233655C (en) 1995-11-27 2005-05-17 The Dow Chemical Company Supported catalyst containing tethered cation forming activator
US6445006B1 (en) 1995-12-20 2002-09-03 Advanced Technology Materials, Inc. Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making same
US5872422A (en) 1995-12-20 1999-02-16 Advanced Technology Materials, Inc. Carbon fiber-based field emission devices
US5903723A (en) * 1995-12-21 1999-05-11 Intel Corporation Method and apparatus for transmitting electronic mail attachments with attachment references
US5799209A (en) 1995-12-29 1998-08-25 Chatter; Mukesh Multi-port internally cached DRAM system utilizing independent serial interfaces and buffers arbitratively connected under a dynamic configuration
US5897945A (en) 1996-02-26 1999-04-27 President And Fellows Of Harvard College Metal oxide nanorods
US6036774A (en) 1996-02-26 2000-03-14 President And Fellows Of Harvard College Method of producing metal oxide nanorods
US5875451A (en) 1996-03-14 1999-02-23 Enhanced Memory Systems, Inc. Computer hybrid memory including DRAM and EDRAM memory components, with secondary cache in EDRAM for DRAM
US5640343A (en) 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
US5650958A (en) 1996-03-18 1997-07-22 International Business Machines Corporation Magnetic tunnel junctions with controlled magnetic response
US5939785A (en) 1996-04-12 1999-08-17 Texas Instruments Incorporated Micromechanical device including time-release passivant
US5993697A (en) 1996-05-14 1999-11-30 The Regents Of The University Of California Metallic carbon materials
BR9710812A (en) 1996-05-15 1999-08-17 Hyperion Catalysis Int Graphical manofibers in electrochemical capacitors
AU4055297A (en) 1996-08-08 1998-02-25 William Marsh Rice University Macroscopically manipulable nanoscale devices made from nanotube assemblies
US5838165A (en) 1996-08-21 1998-11-17 Chatter; Mukesh High performance self modifying on-the-fly alterable logic FPGA, architecture and method
US5781717A (en) 1996-09-19 1998-07-14 I-Cube, Inc. Dynamic spare column replacement memory system
JPH10106960A (en) 1996-09-25 1998-04-24 Sony Corp Manufacture of quantum thin line
US5802583A (en) 1996-10-30 1998-09-01 Ramtron International Corporation Sysyem and method providing selective write protection for individual blocks of memory in a non-volatile memory device
JP3447492B2 (en) 1996-11-12 2003-09-16 日本電気株式会社 Carbon material and its manufacturing method
US6025618A (en) 1996-11-12 2000-02-15 Chen; Zhi Quan Two-parts ferroelectric RAM
US6038060A (en) 1997-01-16 2000-03-14 Crowley; Robert Joseph Optical antenna array for harmonic generation, mixing and signal amplification
KR100532801B1 (en) 1997-01-21 2005-12-02 굿리치 코포레이션 Fabrication of a semiconductor device with air gaps for ultra-low capacitance interconnections
EP0892942B1 (en) 1997-02-06 2002-06-19 International Business Machines Corporation layered medium and method for creating a pattern
US6809462B2 (en) 2000-04-05 2004-10-26 Sri International Electroactive polymer sensors
US5753088A (en) 1997-02-18 1998-05-19 General Motors Corporation Method for making carbon nanotubes
US6083293A (en) * 1997-02-24 2000-07-04 Bath; Virginia L. Method for enhanced plant protein production and composition for use in the same
TW419828B (en) 1997-02-26 2001-01-21 Toshiba Corp Semiconductor integrated circuit
US6683783B1 (en) 1997-03-07 2004-01-27 William Marsh Rice University Carbon fibers formed from single-wall carbon nanotubes
US6088760A (en) 1997-03-07 2000-07-11 Mitsubishi Semiconductor America, Inc. Addressing system in a multi-port RAM having main and cache memories
US5997832A (en) 1997-03-07 1999-12-07 President And Fellows Of Harvard College Preparation of carbide nanorods
JP3183845B2 (en) 1997-03-21 2001-07-09 財団法人ファインセラミックスセンター Method for producing carbon nanotube and carbon nanotube film
US5946930A (en) 1997-03-26 1999-09-07 Anthony; Michael M. Self-cooling beverage and food container using fullerene nanotubes
US5847565A (en) 1997-03-31 1998-12-08 Council Of Scientific And Industrial Research Logic device
US6359288B1 (en) 1997-04-24 2002-03-19 Massachusetts Institute Of Technology Nanowire arrays
US5878840A (en) 1997-05-06 1999-03-09 Tessum; Mark Reed Apparatus and method for stabilizing a scaffold assembly
US6233665B1 (en) 1997-05-27 2001-05-15 Unisys Corporation Mapping shared DRAM address bits by accessing data memory in page mode cache status memory in word mode
US6049856A (en) 1997-05-27 2000-04-11 Unisys Corporation System for simultaneously accessing two portions of a shared memory
US5914553A (en) 1997-06-16 1999-06-22 Cornell Research Foundation, Inc. Multistable tunable micromechanical resonators
KR100276569B1 (en) 1997-06-20 2000-12-15 김영환 Ferroelectric memory device
JPH1117035A (en) 1997-06-24 1999-01-22 Mitsubishi Electric Corp Nonvolatile semiconductor memory and manufacture thereof
US6069380A (en) 1997-07-25 2000-05-30 Regents Of The University Of Minnesota Single-electron floating-gate MOS memory
US6212597B1 (en) 1997-07-28 2001-04-03 Neonet Lllc Apparatus for and method of architecturally enhancing the performance of a multi-port internally cached (AMPIC) DRAM array and like
US6221330B1 (en) 1997-08-04 2001-04-24 Hyperion Catalysis International Inc. Process for producing single wall nanotubes using unsupported metal catalysts
DE69834673T2 (en) 1997-09-30 2006-10-26 Noritake Co., Ltd., Nagoya Method for producing an electron-emitting source
US5903010A (en) 1997-10-29 1999-05-11 Hewlett-Packard Company Quantum wire switch and switching method
US6038637A (en) 1997-11-25 2000-03-14 Nortel Networks Corporation Universal DRAM address multiplexer
US5928450A (en) 1998-02-05 1999-07-27 Russell; Daniel Nelson Process of making fractal tubes
US5946228A (en) 1998-02-10 1999-08-31 International Business Machines Corporation Limiting magnetic writing fields to a preferred portion of a changeable magnetic region in magnetic devices
US6104633A (en) 1998-02-10 2000-08-15 International Business Machines Corporation Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devices
US6072718A (en) 1998-02-10 2000-06-06 International Business Machines Corporation Magnetic memory devices having multiple magnetic tunnel junctions therein
TW392357B (en) 1998-02-10 2000-06-01 United Microelectronics Corp Manufacturing method for semiconductor device and structure manufactured by the same
US5930164A (en) 1998-02-26 1999-07-27 Motorola, Inc. Magnetic memory unit having four states and operating method thereof
US6528785B1 (en) 1998-12-03 2003-03-04 Daiken Chemical Co., Ltd. Fusion-welded nanotube surface signal probe and method of attaching nanotube to probe holder
US6262469B1 (en) 1998-03-25 2001-07-17 Advanced Micro Devices, Inc. Capacitor for use in a capacitor divider that has a floating gate transistor as a corresponding capacitor
JP3415038B2 (en) 1998-03-25 2003-06-09 株式会社島津製作所 Carbon production method
US6138219A (en) 1998-03-27 2000-10-24 Nexabit Networks Llc Method of and operating architectural enhancement for multi-port internally cached dynamic random access memory (AMPIC DRAM) systems, eliminating external control paths and random memory addressing, while providing zero bus contention for DRAM access
US6703163B2 (en) 1998-03-31 2004-03-09 Celanese Ventures Gmbh Lithium battery and electrode
US6156256A (en) 1998-05-13 2000-12-05 Applied Sciences, Inc. Plasma catalysis of carbon nanofibers
US6159742A (en) 1998-06-05 2000-12-12 President And Fellows Of Harvard College Nanometer-scale microscopy probes
US6203864B1 (en) 1998-06-08 2001-03-20 Nec Corporation Method of forming a heterojunction of a carbon nanotube and a different material, method of working a filament of a nanotube
US6426134B1 (en) 1998-06-30 2002-07-30 E. I. Du Pont De Nemours And Company Single-wall carbon nanotube-polymer composites
ATA119098A (en) 1998-07-09 1999-05-15 Ims Ionen Mikrofab Syst METHOD FOR PRODUCING A CARBON FILM ON A SUBSTRATE
US6259277B1 (en) 1998-07-27 2001-07-10 University Of South Carolina Use of molecular electrostatic potential to process electronic signals
US7416699B2 (en) 1998-08-14 2008-08-26 The Board Of Trustees Of The Leland Stanford Junior University Carbon nanotube devices
US6052263A (en) 1998-08-21 2000-04-18 International Business Machines Corporation Low moment/high coercivity pinned layer for magnetic tunnel junction sensors
US6219212B1 (en) 1998-09-08 2001-04-17 International Business Machines Corporation Magnetic tunnel junction head structure with insulating antiferromagnetic layer
US6630772B1 (en) 1998-09-21 2003-10-07 Agere Systems Inc. Device comprising carbon nanotube field emitter structure and process for forming device
US6146227A (en) 1998-09-28 2000-11-14 Xidex Corporation Method for manufacturing carbon nanotubes as functional elements of MEMS devices
US6187823B1 (en) * 1998-10-02 2001-02-13 University Of Kentucky Research Foundation Solubilizing single-walled carbon nanotubes by direct reaction with amines and alkylaryl amines
JP2000123711A (en) 1998-10-12 2000-04-28 Toshiba Corp Electric field emission cold cathode and manufacture thereof
US6348700B1 (en) 1998-10-27 2002-02-19 The Mitre Corporation Monomolecular rectifying wire and logic based thereupon
US6237130B1 (en) 1998-10-29 2001-05-22 Nexabit Networks, Inc. Chip layout for implementing arbitrated high speed switching access of pluralities of I/O data ports to internally cached DRAM banks and the like
US6048740A (en) 1998-11-05 2000-04-11 Sharp Laboratories Of America, Inc. Ferroelectric nonvolatile transistor and method of making same
US6232706B1 (en) 1998-11-12 2001-05-15 The Board Of Trustees Of The Leland Stanford Junior University Self-oriented bundles of carbon nanotubes and method of making same
US6300205B1 (en) 1998-11-18 2001-10-09 Advanced Micro Devices, Inc. Method of making a semiconductor device with self-aligned active, lightly-doped drain, and halo regions
US6152977A (en) 1998-11-30 2000-11-28 General Electric Company Surface functionalized diamond crystals and methods for producing same
US6250984B1 (en) 1999-01-25 2001-06-26 Agere Systems Guardian Corp. Article comprising enhanced nanotube emitter structure and process for fabricating article
ES2264928T3 (en) * 1999-02-12 2007-02-01 Board Of Trustees Operating Michigan State University NANOCAPSULES CONTAINING LOADED PARTICLES, THEIR USES AND PROCEDURES FOR THE PREPARATION OF THE SAME.
US6280697B1 (en) 1999-03-01 2001-08-28 The University Of North Carolina-Chapel Hill Nanotube-based high energy material and method
JP2000268706A (en) 1999-03-18 2000-09-29 Matsushita Electric Ind Co Ltd Electron emitting element and image drawing device using the same
US6348295B1 (en) 1999-03-26 2002-02-19 Massachusetts Institute Of Technology Methods for manufacturing electronic and electromechanical elements and devices by thin-film deposition and imaging
US6314019B1 (en) * 1999-03-29 2001-11-06 Hewlett-Packard Company Molecular-wire crossbar interconnect (MWCI) for signal routing and communications
US6518156B1 (en) * 1999-03-29 2003-02-11 Hewlett-Packard Company Configurable nanoscale crossbar electronic circuits made by electrochemical reaction
US6256767B1 (en) 1999-03-29 2001-07-03 Hewlett-Packard Company Demultiplexer for a molecular wire crossbar network (MWCN DEMUX)
US6105381A (en) 1999-03-31 2000-08-22 International Business Machines Corporation Method and apparatus for cooling GMR heads for magnetic hard disks
US6331209B1 (en) 1999-04-21 2001-12-18 Jin Jang Method of forming carbon nanotubes
EP1052520B1 (en) 1999-05-10 2005-07-27 Hitachi Europe Limited Magnetoelectric device
US6177703B1 (en) 1999-05-28 2001-01-23 Vlsi Technology, Inc. Method and apparatus for producing a single polysilicon flash EEPROM having a select transistor and a floating gate transistor
EP1059266A3 (en) 1999-06-11 2000-12-20 Iljin Nanotech Co., Ltd. Mass synthesis method of high purity carbon nanotubes vertically aligned over large-size substrate using thermal chemical vapor deposition
US6361861B2 (en) 1999-06-14 2002-03-26 Battelle Memorial Institute Carbon nanotubes on a substrate
KR100364095B1 (en) 1999-06-15 2002-12-12 일진나노텍 주식회사 Massive purification method of carbon nanotubes
KR100376197B1 (en) 1999-06-15 2003-03-15 일진나노텍 주식회사 Low temperature synthesis of carbon nanotubes using metal catalyst layer for decompsing carbon source gas
ATE330905T1 (en) 1999-06-16 2006-07-15 Inst Of Metal Res Of The Chine PRODUCTION OF SINGLE WALL CARBON NANOTUBE
US6648711B1 (en) 1999-06-16 2003-11-18 Iljin Nanotech Co., Ltd. Field emitter having carbon nanotube film, method of fabricating the same, and field emission display device using the field emitter
JP2001052652A (en) 1999-06-18 2001-02-23 Cheol Jin Lee White light source and its manufacture
AU782000B2 (en) 1999-07-02 2005-06-23 President And Fellows Of Harvard College Nanoscopic wire-based devices, arrays, and methods of their manufacture
US6322713B1 (en) 1999-07-15 2001-11-27 Agere Systems Guardian Corp. Nanoscale conductive connectors and method for making same
EP1072693A1 (en) 1999-07-27 2001-01-31 Iljin Nanotech Co., Ltd. Chemical vapor deposition apparatus and method of synthesizing carbon nanotubes using the apparatus
AU6538400A (en) 1999-08-12 2001-03-13 Midwest Research Institute Single-wall carbon nanotubes
US6277318B1 (en) 1999-08-18 2001-08-21 Agere Systems Guardian Corp. Method for fabrication of patterned carbon nanotube films
US6062931A (en) 1999-09-01 2000-05-16 Industrial Technology Research Institute Carbon nanotube emitter with triode structure
US6166948A (en) 1999-09-03 2000-12-26 International Business Machines Corporation Magnetic memory array with magnetic tunnel junction memory cells having flux-closed free layers
US6325909B1 (en) 1999-09-24 2001-12-04 The Governing Council Of The University Of Toronto Method of growth of branched carbon nanotubes and devices produced from the branched nanotubes
AT407754B (en) 1999-09-29 2001-06-25 Electrovac METHOD AND DEVICE FOR PRODUCING A NANOTUBE LAYER ON A SUBSTRATE
WO2001027963A1 (en) 1999-10-12 2001-04-19 Matsushita Electric Industrial Co., Ltd. Electron-emitting device and electron source comprising the same, field-emission image display, fluorescent lamp, and methods for producing them
US6741019B1 (en) 1999-10-18 2004-05-25 Agere Systems, Inc. Article comprising aligned nanowires
AT408052B (en) 1999-11-10 2001-08-27 Electrovac CONNECTION SYSTEM
US6198655B1 (en) 1999-12-10 2001-03-06 The Regents Of The University Of California Electrically addressable volatile non-volatile molecular-based switching devices
KR20010056153A (en) 1999-12-14 2001-07-04 구자홍 Field emission display device and its fabrication method
KR20010063852A (en) 1999-12-24 2001-07-09 박종섭 A method for forming a self aligned contact of semiconductor device
KR100477739B1 (en) 1999-12-30 2005-03-18 삼성에스디아이 주식회사 Field emission device and driving method thereof
US6584589B1 (en) 2000-02-04 2003-06-24 Hewlett-Packard Development Company, L.P. Self-testing of magneto-resistive memory arrays
US7335603B2 (en) 2000-02-07 2008-02-26 Vladimir Mancevski System and method for fabricating logic devices comprising carbon nanotube transistors
US6727105B1 (en) 2000-02-28 2004-04-27 Hewlett-Packard Development Company, L.P. Method of fabricating an MRAM device including spin dependent tunneling junction memory cells
US6294450B1 (en) 2000-03-01 2001-09-25 Hewlett-Packard Company Nanoscale patterning for the formation of extensive wires
US6495116B1 (en) 2000-04-10 2002-12-17 Lockheed Martin Corporation Net shape manufacturing using carbon nanotubes
US6413487B1 (en) 2000-06-02 2002-07-02 The Board Of Regents Of The University Of Oklahoma Method and apparatus for producing carbon nanotubes
US6443901B1 (en) 2000-06-15 2002-09-03 Koninklijke Philips Electronics N.V. Capacitive micromachined ultrasonic transducers
EP1170799A3 (en) 2000-07-04 2009-04-01 Infineon Technologies AG Electronic device and method of manufacture of an electronic device
GB2364933B (en) 2000-07-18 2002-12-31 Lg Electronics Inc Method of horizontally growing carbon nanotubes
DE10041378C1 (en) 2000-08-23 2002-05-16 Infineon Technologies Ag MRAM configuration
AU2001286655A1 (en) 2000-08-24 2002-03-04 William Marsh Rice University Polymer-wrapped single wall carbon nanotubes
MY128644A (en) 2000-08-31 2007-02-28 Georgia Tech Res Inst Fabrication of semiconductor devices with air gaps for ultra low capacitance interconnections and methods of making same
US6566983B2 (en) * 2000-09-02 2003-05-20 Lg Electronics Inc. Saw filter using a carbon nanotube and method for manufacturing the same
WO2002022499A1 (en) 2000-09-18 2002-03-21 President And Fellows Of Harvard College Fabrication of nanotube microscopy tips
US6354133B1 (en) * 2000-10-25 2002-03-12 Advanced Micro Devices, Inc. Use of carbon nanotubes to calibrate conventional tips used in AFM
US6548841B2 (en) * 2000-11-09 2003-04-15 Texas Instruments Incorporated Nanomechanical switches and circuits
EP1205436A1 (en) 2000-11-13 2002-05-15 International Business Machines Corporation Crystals comprising single-walled carbon nanotubes
US6400088B1 (en) 2000-11-15 2002-06-04 Trw Inc. Infrared carbon nanotube detector
US6423583B1 (en) 2001-01-03 2002-07-23 International Business Machines Corporation Methodology for electrically induced selective breakdown of nanotubes
US7052668B2 (en) 2001-01-31 2006-05-30 William Marsh Rice University Process utilizing seeds for making single-wall carbon nanotubes
US20020102193A1 (en) 2001-01-31 2002-08-01 William Marsh Rice University Process utilizing two zones for making single-wall carbon nanotubes
US6358756B1 (en) 2001-02-07 2002-03-19 Micron Technology, Inc. Self-aligned, magnetoresistive random-access memory (MRAM) structure utilizing a spacer containment scheme
US6448701B1 (en) 2001-03-09 2002-09-10 The United States Of America As Represented By The Secretary Of The Navy Self-aligned integrally gated nanofilament field emitter cell and array
US6541309B2 (en) * 2001-03-21 2003-04-01 Hewlett-Packard Development Company Lp Fabricating a molecular electronic device having a protective barrier layer
WO2002080360A1 (en) 2001-03-30 2002-10-10 California Institute Of Technology Pattern-aligned carbon nanotube growth and tunable resonator apparatus
AU2002307129A1 (en) 2001-04-03 2002-10-21 Carnegie Mellon University Electronic circuit device, system and method
US20020160111A1 (en) 2001-04-25 2002-10-31 Yi Sun Method for fabrication of field emission devices using carbon nanotube film as a cathode
WO2002095097A1 (en) 2001-05-21 2002-11-28 Trustees Of Boston College, The Varied morphology carbon nanotubes and methods for their manufacture
JP4207398B2 (en) 2001-05-21 2009-01-14 富士ゼロックス株式会社 Method for manufacturing wiring of carbon nanotube structure, wiring of carbon nanotube structure, and carbon nanotube device using the same
US6426687B1 (en) 2001-05-22 2002-07-30 The Aerospace Corporation RF MEMS switch
US6858455B2 (en) 2001-05-25 2005-02-22 Ut-Battelle, Llc Gated fabrication of nanostructure field emission cathode material within a device
US6432740B1 (en) 2001-06-28 2002-08-13 Hewlett-Packard Company Fabrication of molecular electronic circuit by imprinting
US6574130B2 (en) 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US7259410B2 (en) 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US6706402B2 (en) * 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6643165B2 (en) * 2001-07-25 2003-11-04 Nantero, Inc. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US6919592B2 (en) 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US6924538B2 (en) 2001-07-25 2005-08-02 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US6849245B2 (en) * 2001-12-11 2005-02-01 Catalytic Materials Llc Catalysts for producing narrow carbon nanostructures
EP1468423A2 (en) 2002-01-18 2004-10-20 California Institute Of Technology Array-based architecture for molecular electronics
EP1341184B1 (en) 2002-02-09 2005-09-14 Samsung Electronics Co., Ltd. Memory device utilizing carbon nanotubes and method of fabricating the memory device
US6759693B2 (en) 2002-06-19 2004-07-06 Nantero, Inc. Nanotube permeable base transistor
US6809465B2 (en) 2002-08-23 2004-10-26 Samsung Electronics Co., Ltd. Article comprising MEMS-based two-dimensional e-beam sources and method for making the same
US7051945B2 (en) 2002-09-30 2006-05-30 Nanosys, Inc Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
US6919740B2 (en) 2003-01-31 2005-07-19 Hewlett-Packard Development Company, Lp. Molecular-junction-nanowire-crossbar-based inverter, latch, and flip-flop circuits, and more complex circuits composed, in part, from molecular-junction-nanowire-crossbar-based inverter, latch, and flip-flop circuits
US6918284B2 (en) 2003-03-24 2005-07-19 The United States Of America As Represented By The Secretary Of The Navy Interconnected networks of single-walled carbon nanotubes
US7294877B2 (en) 2003-03-28 2007-11-13 Nantero, Inc. Nanotube-on-gate FET structures and applications
WO2005019793A2 (en) 2003-05-14 2005-03-03 Nantero, Inc. Sensor platform using a horizontally oriented nanotube element
US20040238907A1 (en) 2003-06-02 2004-12-02 Pinkerton Joseph F. Nanoelectromechanical transistors and switch systems
US7161218B2 (en) 2003-06-09 2007-01-09 Nantero, Inc. One-time programmable, non-volatile field effect devices and methods of making same
US6882256B1 (en) 2003-06-20 2005-04-19 Northrop Grumman Corporation Anchorless electrostatically activated micro electromechanical system switch
US7115960B2 (en) 2003-08-13 2006-10-03 Nantero, Inc. Nanotube-based switching elements
US6969651B1 (en) 2004-03-26 2005-11-29 Lsi Logic Corporation Layout design and process to form nanotube cell for nanotube memory applications
US7161403B2 (en) 2004-06-18 2007-01-09 Nantero, Inc. Storage elements using nanotube switching elements
US6955937B1 (en) 2004-08-12 2005-10-18 Lsi Logic Corporation Carbon nanotube memory cell for integrated circuit structure with removable side spacers to permit access to memory cell and process for forming such memory cell
US20060237799A1 (en) 2005-04-21 2006-10-26 Lsi Logic Corporation Carbon nanotube memory cells having flat bottom electrode contact surface
US7402770B2 (en) 2005-06-10 2008-07-22 Lsi Logic Corporation Nano structure electrode design

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6159620A (en) * 1997-03-31 2000-12-12 The Regents Of The University Of California Single-electron solid state electronic device
US6144481A (en) * 1998-12-18 2000-11-07 Eastman Kodak Company Method and system for actuating electro-mechanical ribbon elements in accordance to a data stream
US6128214A (en) * 1999-03-29 2000-10-03 Hewlett-Packard Molecular wire crossbar memory

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