WO2003021613A3 - Electromechanical memory array using nanotube ribbons and method for making same - Google Patents

Electromechanical memory array using nanotube ribbons and method for making same Download PDF

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Publication number
WO2003021613A3
WO2003021613A3 PCT/US2002/023859 US0223859W WO03021613A3 WO 2003021613 A3 WO2003021613 A3 WO 2003021613A3 US 0223859 W US0223859 W US 0223859W WO 03021613 A3 WO03021613 A3 WO 03021613A3
Authority
WO
WIPO (PCT)
Prior art keywords
making same
memory array
nanotube ribbons
electromechanical memory
electromechanical
Prior art date
Application number
PCT/US2002/023859
Other languages
French (fr)
Other versions
WO2003021613A2 (en
Inventor
Brent M Segal
Darren K Brock
Thomas Rueckes
Original Assignee
Nantero Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nantero Inc filed Critical Nantero Inc
Priority to KR1020047001159A priority Critical patent/KR100945403B1/en
Priority to AU2002353770A priority patent/AU2002353770A1/en
Priority to EP02789151A priority patent/EP1410429A4/en
Priority to JP2003525864A priority patent/JP4505683B2/en
Priority to CA002454834A priority patent/CA2454834A1/en
Priority to TW092100450A priority patent/TWI246788B/en
Publication of WO2003021613A2 publication Critical patent/WO2003021613A2/en
Publication of WO2003021613A3 publication Critical patent/WO2003021613A3/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0094—Switches making use of nanoelectromechanical systems [NEMS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/16—Memory cell being a nanotube, e.g. suspended nanotube
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/724—Devices having flexible or movable element
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/742—Carbon nanotubes, CNTs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/788—Of specified organic or carbon-based composition
    • Y10S977/795—Composed of biological material
    • Y10S977/796—Composed of biological material for electrical or electronic purpose
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/855—Manufacture, treatment, or detection of nanostructure with scanning probe for manufacture of nanostructure
    • Y10S977/856—Manufacture, treatment, or detection of nanostructure with scanning probe for manufacture of nanostructure including etching/cutting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/888—Shaping or removal of materials, e.g. etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24893—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including particulate material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer

Abstract

Electromechanical circuits, such as memory cells, and methods for making same are disclosed. The circuits include a structure having electrically conductive traces (104) and supports (102) and nanotube ribbons (105) suspended by the supports that cross the electrically conductive traces, wherein each ribbon (105) contains one or more nanotubes.
PCT/US2002/023859 2001-07-25 2002-07-25 Electromechanical memory array using nanotube ribbons and method for making same WO2003021613A2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020047001159A KR100945403B1 (en) 2001-07-25 2002-07-25 Electromechanical memory array using nanotube ribbons and method for making same
AU2002353770A AU2002353770A1 (en) 2001-07-25 2002-07-25 Electromechanical memory array using nanotube ribbons and method for making same
EP02789151A EP1410429A4 (en) 2001-07-25 2002-07-25 Electromechanical memory array using nanotube ribbons and method for making same
JP2003525864A JP4505683B2 (en) 2001-07-25 2002-07-25 Electromechanical memory array using nanotube ribbon and manufacturing method thereof
CA002454834A CA2454834A1 (en) 2001-07-25 2002-07-25 Electromechanical memory array using nanotube ribbons and method for making same
TW092100450A TWI246788B (en) 2001-07-25 2003-01-10 Electromechanical memory array using nanotube ribbons and method for making same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/915,093 2001-07-25
US09/915,093 US6919592B2 (en) 2001-07-25 2001-07-25 Electromechanical memory array using nanotube ribbons and method for making same

Publications (2)

Publication Number Publication Date
WO2003021613A2 WO2003021613A2 (en) 2003-03-13
WO2003021613A3 true WO2003021613A3 (en) 2003-08-28

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/023859 WO2003021613A2 (en) 2001-07-25 2002-07-25 Electromechanical memory array using nanotube ribbons and method for making same

Country Status (9)

Country Link
US (7) US6919592B2 (en)
EP (1) EP1410429A4 (en)
JP (1) JP4505683B2 (en)
KR (2) KR100838206B1 (en)
CN (1) CN100466181C (en)
AU (1) AU2002353770A1 (en)
CA (1) CA2454834A1 (en)
TW (1) TWI246788B (en)
WO (1) WO2003021613A2 (en)

Families Citing this family (220)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090112078A1 (en) * 2007-10-24 2009-04-30 Joseph Akwo Tabe Embeded advanced force responsive detection platform for monitoring onfield logistics to physiological change
US6593666B1 (en) 2001-06-20 2003-07-15 Ambient Systems, Inc. Energy conversion systems using nanometer scale assemblies and methods for using same
US6835591B2 (en) * 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US6924538B2 (en) 2001-07-25 2005-08-02 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US7563711B1 (en) * 2001-07-25 2009-07-21 Nantero, Inc. Method of forming a carbon nanotube-based contact to semiconductor
US7566478B2 (en) * 2001-07-25 2009-07-28 Nantero, Inc. Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles
US7259410B2 (en) * 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US6919592B2 (en) * 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US6706402B2 (en) 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6643165B2 (en) * 2001-07-25 2003-11-04 Nantero, Inc. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US6574130B2 (en) 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US7075162B2 (en) * 2001-08-30 2006-07-11 Fluidigm Corporation Electrostatic/electrostrictive actuation of elastomer structures using compliant electrodes
US7319057B2 (en) * 2001-10-30 2008-01-15 Ovonyx, Inc. Phase change material memory device
US6784028B2 (en) * 2001-12-28 2004-08-31 Nantero, Inc. Methods of making electromechanical three-trace junction devices
US7176505B2 (en) * 2001-12-28 2007-02-13 Nantero, Inc. Electromechanical three-trace junction devices
SE0200868D0 (en) * 2002-03-20 2002-03-20 Chalmers Technology Licensing Theoretical model for a nanorelay and same relay
US7335395B2 (en) * 2002-04-23 2008-02-26 Nantero, Inc. Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
US7304128B2 (en) * 2002-06-04 2007-12-04 E.I. Du Pont De Nemours And Company Carbon nanotube binding peptides
US20030227057A1 (en) * 2002-06-07 2003-12-11 Lochtefeld Anthony J. Strained-semiconductor-on-insulator device structures
US6995430B2 (en) 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
JP4186727B2 (en) * 2002-07-26 2008-11-26 松下電器産業株式会社 switch
EP1388521B1 (en) * 2002-08-08 2006-06-07 Sony Deutschland GmbH Method for preparing a nanowire crossbar structure
US7253434B2 (en) * 2002-10-29 2007-08-07 President And Fellows Of Harvard College Suspended carbon nanotube field effect transistor
AU2003304248A1 (en) * 2002-10-29 2005-01-13 President And Fellows Of Harvard College Carbon nanotube device fabrication
EP1583853A4 (en) 2003-01-13 2006-12-20 Nantero Inc Carbon nanotube films, layers, fabrics, ribbons, elements and articles
US8937575B2 (en) 2009-07-31 2015-01-20 Nantero Inc. Microstrip antenna elements and arrays comprising a shaped nanotube fabric layer and integrated two terminal nanotube select devices
US7858185B2 (en) * 2003-09-08 2010-12-28 Nantero, Inc. High purity nanotube fabrics and films
US9574290B2 (en) 2003-01-13 2017-02-21 Nantero Inc. Methods for arranging nanotube elements within nanotube fabrics and films
US9422651B2 (en) 2003-01-13 2016-08-23 Nantero Inc. Methods for arranging nanoscopic elements within networks, fabrics, and films
CA2512387A1 (en) * 2003-01-13 2004-08-05 Nantero, Inc. Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
AU2003210495A1 (en) * 2003-01-13 2004-08-13 Nantero, Inc. Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles
DE602004027887D1 (en) * 2003-02-12 2010-08-12 Nantero Inc FACILITIES WITH VERTICALLY ARRANGED NANOFABRIC
US7149999B2 (en) * 2003-02-25 2006-12-12 The Regents Of The University Of California Method for correcting a mask design layout
US7198974B2 (en) * 2003-03-05 2007-04-03 Micron Technology, Inc. Micro-mechanically strained semiconductor film
US7075141B2 (en) * 2003-03-28 2006-07-11 Nantero, Inc. Four terminal non-volatile transistor device
US7294877B2 (en) * 2003-03-28 2007-11-13 Nantero, Inc. Nanotube-on-gate FET structures and applications
US7113426B2 (en) * 2003-03-28 2006-09-26 Nantero, Inc. Non-volatile RAM cell and array using nanotube switch position for information state
US6944054B2 (en) * 2003-03-28 2005-09-13 Nantero, Inc. NRAM bit selectable two-device nanotube array
CA2520661A1 (en) * 2003-03-28 2004-10-14 Nantero, Inc. Nanotube-on-gate fet structures and applications
US6995046B2 (en) 2003-04-22 2006-02-07 Nantero, Inc. Process for making byte erasable devices having elements made with nanotubes
US7045421B2 (en) * 2003-04-22 2006-05-16 Nantero, Inc. Process for making bit selectable devices having elements made with nanotubes
US7041575B2 (en) * 2003-04-29 2006-05-09 Micron Technology, Inc. Localized strained semiconductor on insulator
US7220656B2 (en) 2003-04-29 2007-05-22 Micron Technology, Inc. Strained semiconductor by wafer bonding with misorientation
US7115480B2 (en) * 2003-05-07 2006-10-03 Micron Technology, Inc. Micromechanical strained semiconductor by wafer bonding
WO2005019793A2 (en) * 2003-05-14 2005-03-03 Nantero, Inc. Sensor platform using a horizontally oriented nanotube element
US20040238907A1 (en) * 2003-06-02 2004-12-02 Pinkerton Joseph F. Nanoelectromechanical transistors and switch systems
US7148579B2 (en) 2003-06-02 2006-12-12 Ambient Systems, Inc. Energy conversion systems utilizing parallel array of automatic switches and generators
US7199498B2 (en) 2003-06-02 2007-04-03 Ambient Systems, Inc. Electrical assemblies using molecular-scale electrically conductive and mechanically flexible beams and methods for application of same
US7095645B2 (en) 2003-06-02 2006-08-22 Ambient Systems, Inc. Nanoelectromechanical memory cells and data storage devices
US7280394B2 (en) * 2003-06-09 2007-10-09 Nantero, Inc. Field effect devices having a drain controlled via a nanotube switching element
US7274064B2 (en) * 2003-06-09 2007-09-25 Nanatero, Inc. Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
US7466523B1 (en) * 2003-07-10 2008-12-16 Yingjian Chen Nanotube spin valve and method of producing the same
JP3731589B2 (en) * 2003-07-18 2006-01-05 ソニー株式会社 Imaging device and synchronization signal generator
US7439158B2 (en) 2003-07-21 2008-10-21 Micron Technology, Inc. Strained semiconductor by full wafer bonding
EP1665278A4 (en) * 2003-08-13 2007-11-07 Nantero Inc Nanotube-based switching elements with multiple controls and circuits made from same
US7289357B2 (en) * 2003-08-13 2007-10-30 Nantero, Inc. Isolation structure for deflectable nanotube elements
WO2005084164A2 (en) * 2003-08-13 2005-09-15 Nantero, Inc. Nanotube-based switching elements and logic circuits
US7583526B2 (en) * 2003-08-13 2009-09-01 Nantero, Inc. Random access memory including nanotube switching elements
WO2005017967A2 (en) * 2003-08-13 2005-02-24 Nantero, Inc. Nanotube device structure and methods of fabrication
US7115960B2 (en) * 2003-08-13 2006-10-03 Nantero, Inc. Nanotube-based switching elements
US7375369B2 (en) * 2003-09-08 2008-05-20 Nantero, Inc. Spin-coatable liquid for formation of high purity nanotube films
US7416993B2 (en) * 2003-09-08 2008-08-26 Nantero, Inc. Patterned nanowire articles on a substrate and methods of making the same
US7504051B2 (en) * 2003-09-08 2009-03-17 Nantero, Inc. Applicator liquid for use in electronic manufacturing processes
US7528437B2 (en) * 2004-02-11 2009-05-05 Nantero, Inc. EEPROMS using carbon nanotubes for cell storage
US7312155B2 (en) * 2004-04-07 2007-12-25 Intel Corporation Forming self-aligned nano-electrodes
JP2008502143A (en) * 2004-05-24 2008-01-24 トラスティーズ オブ ボストン ユニバーシティ Controllable nanomechanical memory device
US7556746B2 (en) * 2004-06-03 2009-07-07 Nantero, Inc. Method of making an applicator liquid for electronics fabrication process
US7658869B2 (en) * 2004-06-03 2010-02-09 Nantero, Inc. Applicator liquid containing ethyl lactate for preparation of nanotube films
US7709880B2 (en) * 2004-06-09 2010-05-04 Nantero, Inc. Field effect devices having a gate controlled via a nanotube switching element
WO2005124751A1 (en) * 2004-06-15 2005-12-29 Koninklijke Philips Electronics N.V. Optical multi-layer information medium
US7164744B2 (en) * 2004-06-18 2007-01-16 Nantero, Inc. Nanotube-based logic driver circuits
US7329931B2 (en) * 2004-06-18 2008-02-12 Nantero, Inc. Receiver circuit using nanotube-based switches and transistors
US7652342B2 (en) * 2004-06-18 2010-01-26 Nantero, Inc. Nanotube-based transfer devices and related circuits
US7288970B2 (en) * 2004-06-18 2007-10-30 Nantero, Inc. Integrated nanotube and field effect switching device
US7330709B2 (en) * 2004-06-18 2008-02-12 Nantero, Inc. Receiver circuit using nanotube-based switches and logic
US7167026B2 (en) * 2004-06-18 2007-01-23 Nantero, Inc. Tri-state circuit using nanotube switching elements
US7161403B2 (en) * 2004-06-18 2007-01-09 Nantero, Inc. Storage elements using nanotube switching elements
US6955937B1 (en) * 2004-08-12 2005-10-18 Lsi Logic Corporation Carbon nanotube memory cell for integrated circuit structure with removable side spacers to permit access to memory cell and process for forming such memory cell
WO2006121461A2 (en) 2004-09-16 2006-11-16 Nantero, Inc. Light emitters using nanotubes and methods of making same
TWI348169B (en) * 2004-09-21 2011-09-01 Nantero Inc Resistive elements using carbon nanotubes
CA2581248A1 (en) * 2004-09-22 2006-12-28 Nantero, Inc. Random access memory including nanotube switching elements
US20100147657A1 (en) * 2004-11-02 2010-06-17 Nantero, Inc. Nanotube esd protective devices and corresponding nonvolatile and volatile nanotube switches
US7567414B2 (en) * 2004-11-02 2009-07-28 Nantero, Inc. Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches
WO2006065937A2 (en) * 2004-12-16 2006-06-22 Nantero, Inc. Aqueous carbon nanotube applicator liquids and methods for producing applicator liquids thereof
KR100635546B1 (en) * 2004-12-24 2006-10-17 학교법인 포항공과대학교 Probe of scanning probe microscope having a field effect transistor channel and Fabrication method thereof
US7937198B2 (en) * 2004-12-29 2011-05-03 Snap-On Incorporated Vehicle or engine diagnostic systems supporting fast boot and reprogramming
US7634337B2 (en) * 2004-12-29 2009-12-15 Snap-On Incorporated Vehicle or engine diagnostic systems with advanced non-volatile memory
US7598544B2 (en) * 2005-01-14 2009-10-06 Nanotero, Inc. Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same
US8362525B2 (en) * 2005-01-14 2013-01-29 Nantero Inc. Field effect device having a channel of nanofabric and methods of making same
US8000127B2 (en) * 2009-08-12 2011-08-16 Nantero, Inc. Method for resetting a resistive change memory element
US9390790B2 (en) 2005-04-05 2016-07-12 Nantero Inc. Carbon based nonvolatile cross point memory incorporating carbon based diode select devices and MOSFET select devices for memory and logic applications
US8941094B2 (en) 2010-09-02 2015-01-27 Nantero Inc. Methods for adjusting the conductivity range of a nanotube fabric layer
US9287356B2 (en) 2005-05-09 2016-03-15 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
ATE529734T1 (en) * 2005-04-06 2011-11-15 Harvard College MOLECULAR CHARACTERIZATION WITH CARBON NANOTUBE CONTROL
US7835170B2 (en) * 2005-05-09 2010-11-16 Nantero, Inc. Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
US7781862B2 (en) 2005-05-09 2010-08-24 Nantero, Inc. Two-terminal nanotube devices and systems and methods of making same
TWI324773B (en) * 2005-05-09 2010-05-11 Nantero Inc Non-volatile shadow latch using a nanotube switch
US8013363B2 (en) * 2005-05-09 2011-09-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US9196615B2 (en) * 2005-05-09 2015-11-24 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7394687B2 (en) * 2005-05-09 2008-07-01 Nantero, Inc. Non-volatile-shadow latch using a nanotube switch
US8102018B2 (en) * 2005-05-09 2012-01-24 Nantero Inc. Nonvolatile resistive memories having scalable two-terminal nanotube switches
US7782650B2 (en) * 2005-05-09 2010-08-24 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
CN101278355B (en) * 2005-05-09 2013-04-17 南泰若股份有限公司 Non-volatile shadow latch using a nanotube switch
US9911743B2 (en) 2005-05-09 2018-03-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8513768B2 (en) * 2005-05-09 2013-08-20 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7479654B2 (en) 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
US8183665B2 (en) * 2005-11-15 2012-05-22 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8008745B2 (en) * 2005-05-09 2011-08-30 Nantero, Inc. Latch circuits and operation circuits having scalable nonvolatile nanotube switches as electronic fuse replacement elements
US8217490B2 (en) * 2005-05-09 2012-07-10 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7598127B2 (en) * 2005-05-12 2009-10-06 Nantero, Inc. Nanotube fuse structure
TWI264271B (en) * 2005-05-13 2006-10-11 Delta Electronics Inc Heat sink
US7575693B2 (en) 2005-05-23 2009-08-18 Nantero, Inc. Method of aligning nanotubes and wires with an etched feature
US7928521B1 (en) 2005-05-31 2011-04-19 Nantero, Inc. Non-tensioned carbon nanotube switch design and process for making same
US7915122B2 (en) * 2005-06-08 2011-03-29 Nantero, Inc. Self-aligned cell integration scheme
US7541216B2 (en) * 2005-06-09 2009-06-02 Nantero, Inc. Method of aligning deposited nanotubes onto an etched feature using a spacer
JP5054936B2 (en) * 2005-06-22 2012-10-24 パナソニック株式会社 Electromechanical memory, electric circuit using the same, and driving method of electromechanical memory
US7538040B2 (en) * 2005-06-30 2009-05-26 Nantero, Inc. Techniques for precision pattern transfer of carbon nanotubes from photo mask to wafers
US7612424B1 (en) 2005-07-22 2009-11-03 Northwestern University Nanoelectromechanical bistable cantilever device
US7352607B2 (en) * 2005-07-26 2008-04-01 International Business Machines Corporation Non-volatile switching and memory devices using vertical nanotubes
US7799196B2 (en) * 2005-09-01 2010-09-21 Micron Technology, Inc. Methods and apparatus for sorting and/or depositing nanotubes
CA2621500A1 (en) 2005-09-06 2007-03-15 Nantero, Inc. Carbon nanotube resonators
WO2008054364A2 (en) 2005-09-06 2008-05-08 Nantero, Inc. Carbon nanotubes for the selective transfer of heat from electronics
EP1922743A4 (en) * 2005-09-06 2008-10-29 Nantero Inc Method and system of using nanotube fabrics as joule heating elements for memories and other applications
CA2621103C (en) * 2005-09-06 2015-11-03 Nantero, Inc. Nanotube fabric-based sensor systems and methods of making same
US7850778B2 (en) * 2005-09-06 2010-12-14 Lemaire Charles A Apparatus and method for growing fullerene nanotube forests, and forming nanotube films, threads and composite structures therefrom
US7744793B2 (en) 2005-09-06 2010-06-29 Lemaire Alexander B Apparatus and method for growing fullerene nanotube forests, and forming nanotube films, threads and composite structures therefrom
US7446044B2 (en) * 2005-09-19 2008-11-04 California Institute Of Technology Carbon nanotube switches for memory, RF communications and sensing applications, and methods of making the same
JP4919146B2 (en) * 2005-09-27 2012-04-18 独立行政法人産業技術総合研究所 Switching element
US7511532B2 (en) * 2005-11-03 2009-03-31 Cswitch Corp. Reconfigurable logic structures
WO2008048313A2 (en) * 2005-12-19 2008-04-24 Advanced Technology Materials, Inc. Production of carbon nanotubes
JP4843760B2 (en) * 2005-12-26 2011-12-21 株式会社発明屋 Memory element using carbon nanotube
US8264137B2 (en) 2006-01-03 2012-09-11 Samsung Electronics Co., Ltd. Curing binder material for carbon nanotube electron emission cathodes
DE102006004218B3 (en) * 2006-01-30 2007-08-16 Infineon Technologies Ag Electromechanical storage device and method for manufacturing an electromechanical storage device
JP2007212006A (en) * 2006-02-07 2007-08-23 Nissan Motor Co Ltd Combustion condition detecting device for catalyst combustor
US7544584B2 (en) 2006-02-16 2009-06-09 Micron Technology, Inc. Localized compressive strained semiconductor
KR100707212B1 (en) * 2006-03-08 2007-04-13 삼성전자주식회사 Nanowire memory device and method of manufacturing the same
US20070260615A1 (en) * 2006-05-08 2007-11-08 Eran Shen Media with Pluggable Codec
US9680686B2 (en) * 2006-05-08 2017-06-13 Sandisk Technologies Llc Media with pluggable codec methods
US7781267B2 (en) * 2006-05-19 2010-08-24 International Business Machines Corporation Enclosed nanotube structure and method for forming
TWI457923B (en) * 2006-08-08 2014-10-21 Nantero Inc Nonvolatile resistive memories, latch circuits, and operation circuits having scalable two-terminal nanotube switches
KR100803690B1 (en) * 2006-08-10 2008-02-20 삼성전자주식회사 Electro-mechanical non-volatile memory device and method for manufacturing the same
KR100781972B1 (en) * 2006-09-18 2007-12-06 삼성전자주식회사 Memory device and method manufacturing the same
US8945970B2 (en) * 2006-09-22 2015-02-03 Carnegie Mellon University Assembling and applying nano-electro-mechanical systems
KR100802182B1 (en) * 2006-09-27 2008-02-12 한국전자통신연구원 Nanowire filter and method for manufacturing the same and method for removing material adsorbed the nanowire filter and filtering apparatus with the same
KR100834829B1 (en) * 2006-12-19 2008-06-03 삼성전자주식회사 Multi-bit electro-mechanical memory device and method manufacturing the same
FR2910706B1 (en) * 2006-12-21 2009-03-20 Commissariat Energie Atomique INTERCONNECTION ELEMENT BASED ON CARBON NANOTUBES
KR100842730B1 (en) * 2007-01-16 2008-07-01 삼성전자주식회사 Multi-bit electro-mechanical memory device and method manufacturing the same
WO2008127780A2 (en) * 2007-02-21 2008-10-23 Nantero, Inc. Symmetric touch screen system with carbon nanotube-based transparent conductive electrode pairs
WO2008112764A1 (en) 2007-03-12 2008-09-18 Nantero, Inc. Electromagnetic and thermal sensors using carbon nanotubes and methods of making same
US8031514B2 (en) * 2007-04-09 2011-10-04 Northeastern University Bistable nanoswitch
TWI461350B (en) * 2007-05-22 2014-11-21 Nantero Inc Triodes using nanofabric articles and methods of making the same
US7871851B2 (en) * 2007-05-25 2011-01-18 RF Nano Method for integrating nanotube devices with CMOS for RF/analog SoC applications
US8134220B2 (en) 2007-06-22 2012-03-13 Nantero Inc. Two-terminal nanotube devices including a nanotube bridge and methods of making same
US7701013B2 (en) * 2007-07-10 2010-04-20 International Business Machines Corporation Nanoelectromechanical transistors and methods of forming same
US7550354B2 (en) * 2007-07-11 2009-06-23 International Business Machines Corporation Nanoelectromechanical transistors and methods of forming same
WO2009037596A2 (en) * 2007-09-17 2009-03-26 Barrick Gold Corporation Method to improve recovery of gold from double refractory gold ores
US8262770B2 (en) 2007-09-18 2012-09-11 Barrick Gold Corporation Process for controlling acid in sulfide pressure oxidation processes
AU2008300273B2 (en) * 2007-09-18 2012-03-22 Barrick Gold Corporation Process for recovering gold and silver from refractory ores
CA2700862C (en) * 2007-10-02 2016-11-15 President And Fellows Of Harvard College Carbon nanotube synthesis for nanopore devices
US20090113116A1 (en) * 2007-10-30 2009-04-30 Thompson E Earle Digital content kiosk and methods for use therewith
US8009461B2 (en) * 2008-01-07 2011-08-30 International Business Machines Corporation SRAM device, and SRAM device design structure, with adaptable access transistors
KR100978031B1 (en) * 2008-02-04 2010-08-26 연세대학교 산학협력단 Single Crystal Si nanoribbons and the manufacturing method of the same
US8158965B2 (en) * 2008-02-05 2012-04-17 Macronix International Co., Ltd. Heating center PCRAM structure and methods for making
KR100972913B1 (en) 2008-03-31 2010-07-28 주식회사 하이닉스반도체 Method for forming the semiconductor device
US7612270B1 (en) * 2008-04-09 2009-11-03 International Business Machines Corporation Nanoelectromechanical digital inverter
US8133793B2 (en) * 2008-05-16 2012-03-13 Sandisk 3D Llc Carbon nano-film reversible resistance-switchable elements and methods of forming the same
US8587989B2 (en) * 2008-06-20 2013-11-19 Nantero Inc. NRAM arrays with nanotube blocks, nanotube traces, and nanotube planes and methods of making same
US8039380B2 (en) * 2008-06-27 2011-10-18 Commissariat A L'energie Atomique Procedure for obtaining nanotube layers of carbon with conductor or semiconductor substrate
US8569730B2 (en) * 2008-07-08 2013-10-29 Sandisk 3D Llc Carbon-based interface layer for a memory device and methods of forming the same
US8557685B2 (en) * 2008-08-07 2013-10-15 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
US8357921B2 (en) * 2008-08-14 2013-01-22 Nantero Inc. Integrated three-dimensional semiconductor system comprising nonvolatile nanotube field effect transistors
US9263126B1 (en) 2010-09-01 2016-02-16 Nantero Inc. Method for dynamically accessing and programming resistive change element arrays
WO2010033231A2 (en) * 2008-09-19 2010-03-25 Nexeon Medsystems, Inc. Interventional devices including dilute nanotube-polymer compositions, and methods of making and using same
US7897954B2 (en) * 2008-10-10 2011-03-01 Macronix International Co., Ltd. Dielectric-sandwiched pillar memory device
US8835892B2 (en) * 2008-10-30 2014-09-16 Sandisk 3D Llc Electronic devices including carbon nano-tube films having boron nitride-based liners, and methods of forming the same
US8421050B2 (en) * 2008-10-30 2013-04-16 Sandisk 3D Llc Electronic devices including carbon nano-tube films having carbon-based liners, and methods of forming the same
US20100108976A1 (en) * 2008-10-30 2010-05-06 Sandisk 3D Llc Electronic devices including carbon-based films, and methods of forming such devices
US7915637B2 (en) 2008-11-19 2011-03-29 Nantero, Inc. Switching materials comprising mixed nanoscopic particles and carbon nanotubes and method of making and using the same
US8304274B2 (en) * 2009-02-13 2012-11-06 Texas Instruments Incorporated Micro-electro-mechanical system having movable element integrated into substrate-based package
US8183121B2 (en) * 2009-03-31 2012-05-22 Sandisk 3D Llc Carbon-based films, and methods of forming the same, having dielectric filler material and exhibiting reduced thermal resistance
KR101603774B1 (en) * 2009-05-14 2016-03-15 삼성전자주식회사 Method of manufacturing carbon nanotube device array
EP2270813B1 (en) * 2009-06-29 2016-01-06 Taiwan Semiconductor Manufacturing Co., Ltd. Non-volatile memory
US8574673B2 (en) 2009-07-31 2013-11-05 Nantero Inc. Anisotropic nanotube fabric layers and films and methods of forming same
WO2011014446A1 (en) * 2009-07-31 2011-02-03 Nantero, Inc. Anisotropic nanotube fabric layers and films and methods of forming same
US8128993B2 (en) * 2009-07-31 2012-03-06 Nantero Inc. Anisotropic nanotube fabric layers and films and methods of forming same
US20110034008A1 (en) * 2009-08-07 2011-02-10 Nantero, Inc. Method for forming a textured surface on a semiconductor substrate using a nanofabric layer
US8428675B2 (en) * 2009-08-19 2013-04-23 Covidien Lp Nanofiber adhesives used in medical devices
US8253171B1 (en) 2009-08-27 2012-08-28 Lockheed Martin Corporation Two terminal nanotube switch, memory array incorporating the same and method of making
US8350360B1 (en) 2009-08-28 2013-01-08 Lockheed Martin Corporation Four-terminal carbon nanotube capacitors
US20110056812A1 (en) * 2009-09-08 2011-03-10 Kaul Anupama B Nano-electro-mechanical switches using three-dimensional sidewall-conductive carbon nanofibers and method for making the same
US8551806B2 (en) 2009-10-23 2013-10-08 Nantero Inc. Methods for passivating a carbonic nanolayer
US8895950B2 (en) 2009-10-23 2014-11-25 Nantero Inc. Methods for passivating a carbonic nanolayer
US8351239B2 (en) * 2009-10-23 2013-01-08 Nantero Inc. Dynamic sense current supply circuit and associated method for reading and characterizing a resistive memory array
US8222704B2 (en) * 2009-12-31 2012-07-17 Nantero, Inc. Compact electrical switching devices with nanotube elements, and methods of making same
US8435798B2 (en) * 2010-01-13 2013-05-07 California Institute Of Technology Applications and methods of operating a three-dimensional nano-electro-mechanical resonator and related devices
US8405189B1 (en) 2010-02-08 2013-03-26 Lockheed Martin Corporation Carbon nanotube (CNT) capacitors and devices integrated with CNT capacitors
WO2011100661A1 (en) 2010-02-12 2011-08-18 Nantero, Inc. Methods for controlling density, porosity, and/or gap size within nanotube fabric layers and films
US20110203632A1 (en) * 2010-02-22 2011-08-25 Rahul Sen Photovoltaic devices using semiconducting nanotube layers
WO2011103558A1 (en) 2010-02-22 2011-08-25 Nantero, Inc. Logic elements comprising carbon nanotube field effect transistor (cntfet) devices and methods of making same
US20110227043A1 (en) * 2010-03-19 2011-09-22 International Business Machines Corporation Graphene sensor
US10661304B2 (en) 2010-03-30 2020-05-26 Nantero, Inc. Microfluidic control surfaces using ordered nanotube fabrics
US8125824B1 (en) 2010-09-02 2012-02-28 Lockheed Martin Corporation Nanotube random access memory (NRAM) and transistor integration
IT1402406B1 (en) * 2010-10-22 2013-09-04 St Microelectronics Srl METHOD OF MANUFACTURING A SENSOR DEVICE OF A GASEOUS SUBSTANCE OF INTEREST.
EP2557567A1 (en) 2011-08-09 2013-02-13 Thomson Licensing Programmable read-only memory device and method of writing the same
US8633634B2 (en) * 2011-11-18 2014-01-21 The Board Of Regents Of The University Of Texas System MEMs-based cantilever energy harvester
JP5969253B2 (en) * 2012-02-10 2016-08-17 東京応化工業株式会社 Surface treatment agent and surface treatment method
US8552824B1 (en) 2012-04-03 2013-10-08 Hamilton Sundstrand Corporation Integrated planar electromechanical contactors
US9196766B1 (en) 2012-04-25 2015-11-24 Magnolia Optical Technologies, Inc. Thermal detectors using graphene and oxides of graphene and methods of making the same
US9650732B2 (en) 2013-05-01 2017-05-16 Nantero Inc. Low defect nanotube application solutions and fabrics and methods for making same
US10654718B2 (en) 2013-09-20 2020-05-19 Nantero, Inc. Scalable nanotube fabrics and methods for making same
US9299430B1 (en) 2015-01-22 2016-03-29 Nantero Inc. Methods for reading and programming 1-R resistive change element arrays
KR101772071B1 (en) * 2015-06-23 2017-08-28 한국과학기술원 Suspended type nanowire array and manufacturing method thereof
US9627330B2 (en) * 2015-07-13 2017-04-18 International Business Machines Corporation Support for long channel length nanowire transistors
US10920085B2 (en) 2016-01-20 2021-02-16 Honda Motor Co., Ltd. Alteration of carbon fiber surface properties via growing of carbon nanotubes
US9934848B2 (en) 2016-06-07 2018-04-03 Nantero, Inc. Methods for determining the resistive states of resistive change elements
US9941001B2 (en) 2016-06-07 2018-04-10 Nantero, Inc. Circuits for determining the resistive states of resistive change elements
WO2019232013A1 (en) * 2018-05-29 2019-12-05 The Florida State University Research Foundation, Inc. Carbon nanotube sensors, articles, and methods
US11158788B2 (en) * 2018-10-30 2021-10-26 International Business Machines Corporation Atomic layer deposition and physical vapor deposition bilayer for additive patterning
KR102144097B1 (en) * 2018-12-14 2020-08-13 서울대학교산학협력단 Single walled carbon nanotube fiber aggregates and method for preparing the same
KR102406954B1 (en) * 2021-01-11 2022-06-08 한국교통대학교산학협력단 Electronic devices comprising nanoflake sandwiched between crossed nanoribbon junctions

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6407443B2 (en) * 2000-03-01 2002-06-18 Hewlett-Packard Company Nanoscale patterning for the formation of extensive wires
US6432740B1 (en) * 2001-06-28 2002-08-13 Hewlett-Packard Company Fabrication of molecular electronic circuit by imprinting
US20020130353A1 (en) * 1999-07-02 2002-09-19 Lieber Charles M. Nanoscopic wire-based devices, arrays, and methods of their manufacture
US20020175390A1 (en) * 2001-04-03 2002-11-28 Goldstein Seth Copen Electronic circuit device, system, and method

Family Cites Families (290)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US112814A (en) * 1871-03-21 Improvement in curtain-fixtures
US4058A (en) * 1845-05-21 Benjamin haywood
US21966A (en) * 1858-11-02 Josee johnson
US3448302A (en) 1966-06-16 1969-06-03 Itt Operating circuit for phase change memory devices
FR2115034B1 (en) 1970-11-24 1973-11-23 Sescosem
US3892890A (en) 1972-05-12 1975-07-01 Hitachi Ltd Process for forming carbon coatings
US3970887A (en) 1974-06-19 1976-07-20 Micro-Bit Corporation Micro-structure field emission electron source
US4378629A (en) 1979-08-10 1983-04-05 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor, fabrication method
US5032538A (en) 1979-08-10 1991-07-16 Massachusetts Institute Of Technology Semiconductor embedded layer technology utilizing selective epitaxial growth methods
US4324814A (en) 1981-03-19 1982-04-13 Rca Corporation Method for forming a narrow thin film line
US4524431A (en) 1982-02-01 1985-06-18 Texas Instruments Incorporated High-speed nonvolatile memory array
US4495511A (en) 1982-08-23 1985-01-22 The United States Of America As Represented By The Secretary Of The Navy Permeable base transistor structure
US4510016A (en) 1982-12-09 1985-04-09 Gte Laboratories Method of fabricating submicron silicon structures such as permeable base transistors
US4707197A (en) 1984-08-02 1987-11-17 American Telephone And Telegraph Company, At&T Bell Laboratories Method of producing a silicide/Si heteroepitaxial structure, and articles produced by the method
JPS6177199A (en) 1984-09-21 1986-04-19 Toshiba Corp Semiconductor memory
JPS6194042A (en) 1984-10-16 1986-05-12 Matsushita Electric Ind Co Ltd Molecular construction and its manufacture
JPS61121369A (en) 1984-11-19 1986-06-09 Fujitsu Ltd Semiconductor device
US4901121A (en) 1985-03-29 1990-02-13 American Telephone & Telegraph Co., At&T Bell Labs. Semiconductor device comprising a perforated metal silicide layer
US4701842A (en) 1985-10-04 1987-10-20 International Business Machines Corporation Method and apparatus for avoiding excessive delay in a pipelined processor during the execution of a microbranch instruction
US4758534A (en) 1985-11-13 1988-07-19 Bell Communications Research, Inc. Process for producing porous refractory metal layers embedded in semiconductor devices
US4819212A (en) 1986-05-31 1989-04-04 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device with readout test circuitry
US4939556A (en) 1986-07-10 1990-07-03 Canon Kabushiki Kaisha Conductor device
US4845533A (en) 1986-08-22 1989-07-04 Energy Conversion Devices, Inc. Thin film electrical devices with amorphous carbon electrodes and method of making same
CH670914A5 (en) 1986-09-10 1989-07-14 Landis & Gyr Ag
US4876667A (en) 1987-06-22 1989-10-24 Energy Conversion Devices, Inc. Data storage device having a phase change memory medium reversible by direct overwrite
US4853893A (en) 1987-07-02 1989-08-01 Ramtron Corporation Data storage device and method of using a ferroelectric capacitance divider
US4947226A (en) 1987-12-08 1990-08-07 Hoenywell, Inc. Bilateral switching device
US5155561A (en) 1988-01-05 1992-10-13 Massachusetts Institute Of Technology Permeable base transistor having an electrode configuration for heat dissipation
US5184320A (en) 1988-02-12 1993-02-02 Texas Instruments Incorporated Cached random access memory device and system
US4888630A (en) 1988-03-21 1989-12-19 Texas Instruments Incorporated Floating-gate transistor with a non-linear intergate dielectric
GB8807225D0 (en) 1988-03-25 1988-04-27 Hughes Microelectronics Ltd Nonvolatile ram cell
US5198994A (en) 1988-08-31 1993-03-30 Kabushiki Kaisha Toshiba Ferroelectric memory device
US5010037A (en) 1988-10-14 1991-04-23 California Institute Of Technology Pinhole-free growth of epitaxial CoSi2 film on Si(111)
US5592643A (en) 1988-12-22 1997-01-07 Framdrive Ferroelectric storage device emulating a rotating disk drive unit in acomputer system and having a parallel data interface
US5592644A (en) 1988-12-22 1997-01-07 Framdrive Ferroelectric storage device emulating a rotating disk drive unit in a computer system and having an optical data interface
US5592642A (en) 1988-12-22 1997-01-07 Framdrive Ferroelectric storage device emulating a rotating disk drive unit in a computer system and having an optical and parallel data interface
US5089545A (en) 1989-02-12 1992-02-18 Biotech International, Inc. Switching and memory elements from polyamino acids and the method of their assembly
GB8907045D0 (en) 1989-03-29 1989-05-10 Hughes Microelectronics Ltd Sense amplifier
JPH02296372A (en) 1989-05-10 1990-12-06 Mitsubishi Electric Corp Transmissive base transistor
US6346413B1 (en) * 1989-06-07 2002-02-12 Affymetrix, Inc. Polymer arrays
US5161218A (en) 1989-11-13 1992-11-03 Chips And Technologies, Inc. Memory controller for using reserved DRAM addresses for EMS
US4985871A (en) 1989-11-13 1991-01-15 Chips And Technologies, Inc. Memory controller for using reserved dram addresses for expanded memory space
DE4025269A1 (en) 1990-02-07 1991-08-08 Forschungszentrum Juelich Gmbh ELECTRONIC COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
US5412785A (en) 1990-04-09 1995-05-02 Motorola, Inc. Microprogrammed data processor which includes a microsequencer in which a next microaddress output of a microROM is connected to the or-plane of an entry PLA
FR2663466A1 (en) 1990-06-15 1991-12-20 Thomson Csf SEMICONDUCTOR COMPONENT WITH SCHOTTKY JUNCTION FOR HYPERFREQUENCY AMPLIFICATION AND FAST LOGIC CIRCUITS, AND METHOD FOR MAKING SAME.
US5216631A (en) 1990-11-02 1993-06-01 Sliwa Jr John W Microvibratory memory device
CA2062200A1 (en) 1991-03-15 1992-09-16 Stephen C. Purcell Decompression processor for video applications
US5271862A (en) 1991-07-12 1993-12-21 Betz Laboratories, Inc. Inhibition of silica and silicate deposition in cooling water systems
US5196396A (en) 1991-07-16 1993-03-23 The President And Fellows Of Harvard College Method of making a superconducting fullerene composition by reacting a fullerene with an alloy containing alkali metal
US5444651A (en) 1991-10-30 1995-08-22 Sharp Kabushiki Kaisha Non-volatile memory device
US5290715A (en) 1991-12-31 1994-03-01 U.S. Philips Corporation Method of making dielectrically isolated metal base transistors and permeable base transistors
US5198390A (en) 1992-01-16 1993-03-30 Cornell Research Foundation, Inc. RIE process for fabricating submicron, silicon electromechanical structures
DE69324508T2 (en) 1992-01-22 1999-12-23 Enhanced Memory Systems Inc DRAM with integrated registers
US5850089A (en) 1992-03-13 1998-12-15 American Research Corporation Of Virginia Modulated-structure of PZT/PT ferroelectric thin films for non-volatile random access memories
US5475341A (en) 1992-06-01 1995-12-12 Yale University Sub-nanoscale electronic systems and devices
US5651126A (en) 1992-06-26 1997-07-22 Apple Computer, Inc. Method and apparatus for reducing transitions on computer signal lines
US5252835A (en) 1992-07-17 1993-10-12 President And Trustees Of Harvard College Machining oxide thin-films with an atomic force microscope: pattern and object formation on the nanometer scale
EP0683921B1 (en) 1993-02-04 2004-06-16 Cornell Research Foundation, Inc. Microstructures and single mask, single-crystal process for fabrication thereof
JP2541091B2 (en) 1993-02-26 1996-10-09 日本電気株式会社 Carbon material and its manufacturing method
CA2118662C (en) 1993-03-22 1999-07-13 Paul A. Santeler Memory controller having all dram address and control signals provided synchronously from a single device
US5346683A (en) 1993-03-26 1994-09-13 Gas Research Institute Uncapped and thinned carbon nanotubes and process
JPH06302179A (en) 1993-04-13 1994-10-28 Casio Comput Co Ltd Electronic equipment
JPH0799189A (en) 1993-04-28 1995-04-11 Mitsubishi Electric Corp Manufacture of semiconductor device
US5424054A (en) 1993-05-21 1995-06-13 International Business Machines Corporation Carbon fibers and method for their production
US5426070A (en) 1993-05-26 1995-06-20 Cornell Research Foundation, Inc. Microstructures and high temperature isolation process for fabrication thereof
US5456986A (en) 1993-06-30 1995-10-10 Carnegie Mellon University Magnetic metal or metal carbide nanoparticles and a process for forming same
US5453970A (en) 1993-07-13 1995-09-26 Rust; Thomas F. Molecular memory medium and molecular memory disk drive for storing information using a tunnelling probe
WO1995002709A2 (en) 1993-07-15 1995-01-26 President And Fellows Of Harvard College EXTENDED NITRIDE MATERIAL COMPRISING β-C3N¿4?
US5547748A (en) 1994-01-14 1996-08-20 Sri International Carbon nanoencapsulates
JP2526408B2 (en) 1994-01-28 1996-08-21 工業技術院長 Carbon nano tube continuous manufacturing method and apparatus
US5444421A (en) 1994-02-10 1995-08-22 Racom Systems, Inc. Low power consumption oscillator using multiple transconductance amplifiers
US5521602A (en) 1994-02-10 1996-05-28 Racom Systems, Inc. Communications system utilizing FSK/PSK modulation techniques
US5533061A (en) 1994-02-10 1996-07-02 Racom Systems, Inc. Method and apparatus for detecting an FSK encoded carrier signal
US5479172A (en) 1994-02-10 1995-12-26 Racom Systems, Inc. Power supply and power enable circuit for an RF/ID transponder
US5608246A (en) * 1994-02-10 1997-03-04 Ramtron International Corporation Integration of high value capacitor with ferroelectric memory
US5553099A (en) 1994-02-10 1996-09-03 Racom Systems, Inc. FSK detector for determining an increasing time period between adjacent pulses of an FSK modulated square wave pulse train
US5517194A (en) 1994-02-10 1996-05-14 Racom Systems, Inc. Passive RF transponder and method
US5563424A (en) 1994-03-24 1996-10-08 Uniax Corporation Polymer grid triodes
US6226722B1 (en) * 1994-05-19 2001-05-01 International Business Machines Corporation Integrated level two cache and controller with multiple ports, L1 bypass and concurrent accessing
US5626670A (en) 1994-10-03 1997-05-06 American Research Corporation Of Virginia Method for producing low thermal budget ferroelectric thin films for integrated device structures using laser-crystallization of spin-on sol-gel films
US5590078A (en) 1994-10-07 1996-12-31 Mukesh Chatter Method of and apparatus for improved dynamic random access memory (DRAM) providing increased data bandwidth and addressing range for current DRAM devices and/or equivalent bandwidth and addressing range for smaller DRAM devices
US6100109A (en) * 1994-11-02 2000-08-08 Siemens Aktiengesellschaft Method for producing a memory device
US5623638A (en) 1994-11-22 1997-04-22 Advanced Micro Devices, Inc. Memory control unit with programmable edge generator to minimize delay periods for critical DRAM timing parameters
US6203814B1 (en) * 1994-12-08 2001-03-20 Hyperion Catalysis International, Inc. Method of making functionalized nanotubes
US5716708A (en) 1995-01-17 1998-02-10 Lagow; Richard J. Acetylenic carbon allotrope
US6063243A (en) * 1995-02-14 2000-05-16 The Regents Of The Univeristy Of California Method for making nanotubes and nanoparticles
US6231980B1 (en) * 1995-02-14 2001-05-15 The Regents Of The University Of California BX CY NZ nanotubes and nanoparticles
US5780101A (en) 1995-02-17 1998-07-14 Arizona Board Of Regents On Behalf Of The University Of Arizona Method for producing encapsulated nanoparticles and carbon nanotubes using catalytic disproportionation of carbon monoxide
US5747180A (en) 1995-05-19 1998-05-05 University Of Notre Dame Du Lac Electrochemical synthesis of quasi-periodic quantum dot and nanostructure arrays
US5751156A (en) 1995-06-07 1998-05-12 Yale University Mechanically controllable break transducer
US6190634B1 (en) * 1995-06-07 2001-02-20 President And Fellows Of Harvard College Carbide nanomaterials
US5640133A (en) 1995-06-23 1997-06-17 Cornell Research Foundation, Inc. Capacitance based tunable micromechanical resonators
US6183714B1 (en) * 1995-09-08 2001-02-06 Rice University Method of making ropes of single-wall carbon nanotubes
US6380434B1 (en) * 1995-10-26 2002-04-30 Long Y. Chiang Fullerene derivatives
US5757038A (en) 1995-11-06 1998-05-26 International Business Machines Corporation Self-aligned dual gate MOSFET with an ultranarrow channel
DK0863919T3 (en) * 1995-11-27 2000-12-11 Grace W R & Co Supported catalyst containing a tethered cation-forming activator
US6445006B1 (en) 1995-12-20 2002-09-03 Advanced Technology Materials, Inc. Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making same
US5872422A (en) * 1995-12-20 1999-02-16 Advanced Technology Materials, Inc. Carbon fiber-based field emission devices
US5799209A (en) 1995-12-29 1998-08-25 Chatter; Mukesh Multi-port internally cached DRAM system utilizing independent serial interfaces and buffers arbitratively connected under a dynamic configuration
US5697827A (en) * 1996-01-11 1997-12-16 Rabinowitz; Mario Emissive flat panel display with improved regenerative cathode
US5897945A (en) * 1996-02-26 1999-04-27 President And Fellows Of Harvard College Metal oxide nanorods
US6036774A (en) * 1996-02-26 2000-03-14 President And Fellows Of Harvard College Method of producing metal oxide nanorods
US5875451A (en) 1996-03-14 1999-02-23 Enhanced Memory Systems, Inc. Computer hybrid memory including DRAM and EDRAM memory components, with secondary cache in EDRAM for DRAM
US5640343A (en) 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
US5650958A (en) 1996-03-18 1997-07-22 International Business Machines Corporation Magnetic tunnel junctions with controlled magnetic response
US5939785A (en) * 1996-04-12 1999-08-17 Texas Instruments Incorporated Micromechanical device including time-release passivant
RU98120524A (en) * 1996-05-15 2000-10-10 Хайперион Каталайзис Интернэшнл GRAPHITE NANOFIBERS IN ELECTROCHEMICAL CAPACITORS
US5838165A (en) 1996-08-21 1998-11-17 Chatter; Mukesh High performance self modifying on-the-fly alterable logic FPGA, architecture and method
US6057637A (en) 1996-09-13 2000-05-02 The Regents Of The University Of California Field emission electron source
US5781717A (en) 1996-09-19 1998-07-14 I-Cube, Inc. Dynamic spare column replacement memory system
JPH10106960A (en) 1996-09-25 1998-04-24 Sony Corp Manufacture of quantum thin line
US5802583A (en) 1996-10-30 1998-09-01 Ramtron International Corporation Sysyem and method providing selective write protection for individual blocks of memory in a non-volatile memory device
US6025618A (en) * 1996-11-12 2000-02-15 Chen; Zhi Quan Two-parts ferroelectric RAM
JP3447492B2 (en) * 1996-11-12 2003-09-16 日本電気株式会社 Carbon material and its manufacturing method
US5836799A (en) * 1996-12-06 1998-11-17 Texas Instruments Incorporated Self-aligned method of micro-machining field emission display microtips
US6038060A (en) * 1997-01-16 2000-03-14 Crowley; Robert Joseph Optical antenna array for harmonic generation, mixing and signal amplification
JP3525934B2 (en) * 1997-02-06 2004-05-10 インターナショナル・ビジネス・マシーンズ・コーポレーション Layered medium and light emitting diode
US6809462B2 (en) 2000-04-05 2004-10-26 Sri International Electroactive polymer sensors
US5753088A (en) 1997-02-18 1998-05-19 General Motors Corporation Method for making carbon nanotubes
TW419828B (en) * 1997-02-26 2001-01-21 Toshiba Corp Semiconductor integrated circuit
US6088760A (en) * 1997-03-07 2000-07-11 Mitsubishi Semiconductor America, Inc. Addressing system in a multi-port RAM having main and cache memories
DE69830847T2 (en) 1997-03-07 2006-01-12 William Marsh Rice University, Houston CARBON FIBERS OUTSIDE UNIQUE CARBON NANOTUBES
US6159620A (en) * 1997-03-31 2000-12-12 The Regents Of The University Of California Single-electron solid state electronic device
US5847565A (en) 1997-03-31 1998-12-08 Council Of Scientific And Industrial Research Logic device
US6231744B1 (en) * 1997-04-24 2001-05-15 Massachusetts Institute Of Technology Process for fabricating an array of nanowires
US5878840A (en) 1997-05-06 1999-03-09 Tessum; Mark Reed Apparatus and method for stabilizing a scaffold assembly
US6049856A (en) * 1997-05-27 2000-04-11 Unisys Corporation System for simultaneously accessing two portions of a shared memory
US6233665B1 (en) * 1997-05-27 2001-05-15 Unisys Corporation Mapping shared DRAM address bits by accessing data memory in page mode cache status memory in word mode
US5993281A (en) * 1997-06-10 1999-11-30 The Regents Of The University Of California Sharpening of field emitter tips using high-energy ions
GB9712347D0 (en) * 1997-06-14 1997-08-13 Smithkline Beecham Biolog Vaccine
US5914553A (en) * 1997-06-16 1999-06-22 Cornell Research Foundation, Inc. Multistable tunable micromechanical resonators
KR100276569B1 (en) 1997-06-20 2000-12-15 김영환 Ferroelectric memory device
US6069380A (en) * 1997-07-25 2000-05-30 Regents Of The University Of Minnesota Single-electron floating-gate MOS memory
US6212597B1 (en) * 1997-07-28 2001-04-03 Neonet Lllc Apparatus for and method of architecturally enhancing the performance of a multi-port internally cached (AMPIC) DRAM array and like
US6221330B1 (en) * 1997-08-04 2001-04-24 Hyperion Catalysis International Inc. Process for producing single wall nanotubes using unsupported metal catalysts
DE69834673T2 (en) * 1997-09-30 2006-10-26 Noritake Co., Ltd., Nagoya Method for producing an electron-emitting source
US5903010A (en) * 1997-10-29 1999-05-11 Hewlett-Packard Company Quantum wire switch and switching method
US6038637A (en) * 1997-11-25 2000-03-14 Nortel Networks Corporation Universal DRAM address multiplexer
US6409567B1 (en) 1997-12-15 2002-06-25 E.I. Du Pont De Nemours And Company Past-deposited carbon electron emitters
US5928450A (en) * 1998-02-05 1999-07-27 Russell; Daniel Nelson Process of making fractal tubes
US6104633A (en) * 1998-02-10 2000-08-15 International Business Machines Corporation Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devices
US5946228A (en) * 1998-02-10 1999-08-31 International Business Machines Corporation Limiting magnetic writing fields to a preferred portion of a changeable magnetic region in magnetic devices
TW392357B (en) * 1998-02-10 2000-06-01 United Microelectronics Corp Manufacturing method for semiconductor device and structure manufactured by the same
US6072718A (en) * 1998-02-10 2000-06-06 International Business Machines Corporation Magnetic memory devices having multiple magnetic tunnel junctions therein
US5930164A (en) * 1998-02-26 1999-07-27 Motorola, Inc. Magnetic memory unit having four states and operating method thereof
US6262469B1 (en) * 1998-03-25 2001-07-17 Advanced Micro Devices, Inc. Capacitor for use in a capacitor divider that has a floating gate transistor as a corresponding capacitor
US6703163B2 (en) * 1998-03-31 2004-03-09 Celanese Ventures Gmbh Lithium battery and electrode
US6110590A (en) * 1998-04-15 2000-08-29 The University Of Akron Synthetically spun silk nanofibers and a process for making the same
US6203864B1 (en) * 1998-06-08 2001-03-20 Nec Corporation Method of forming a heterojunction of a carbon nanotube and a different material, method of working a filament of a nanotube
KR20010074667A (en) 1998-06-19 2001-08-08 추후보정 Free-standing and aligned carbon nanotubes and synthesis thereof
US6426134B1 (en) * 1998-06-30 2002-07-30 E. I. Du Pont De Nemours And Company Single-wall carbon nanotube-polymer composites
US6259277B1 (en) * 1998-07-27 2001-07-10 University Of South Carolina Use of molecular electrostatic potential to process electronic signals
US7416699B2 (en) * 1998-08-14 2008-08-26 The Board Of Trustees Of The Leland Stanford Junior University Carbon nanotube devices
US6346189B1 (en) * 1998-08-14 2002-02-12 The Board Of Trustees Of The Leland Stanford Junior University Carbon nanotube structures made using catalyst islands
US6052263A (en) * 1998-08-21 2000-04-18 International Business Machines Corporation Low moment/high coercivity pinned layer for magnetic tunnel junction sensors
US6219212B1 (en) * 1998-09-08 2001-04-17 International Business Machines Corporation Magnetic tunnel junction head structure with insulating antiferromagnetic layer
US6630772B1 (en) 1998-09-21 2003-10-07 Agere Systems Inc. Device comprising carbon nanotube field emitter structure and process for forming device
US6187823B1 (en) * 1998-10-02 2001-02-13 University Of Kentucky Research Foundation Solubilizing single-walled carbon nanotubes by direct reaction with amines and alkylaryl amines
JP2000123711A (en) * 1998-10-12 2000-04-28 Toshiba Corp Electric field emission cold cathode and manufacture thereof
US6348700B1 (en) * 1998-10-27 2002-02-19 The Mitre Corporation Monomolecular rectifying wire and logic based thereupon
US6237130B1 (en) * 1998-10-29 2001-05-22 Nexabit Networks, Inc. Chip layout for implementing arbitrated high speed switching access of pluralities of I/O data ports to internally cached DRAM banks and the like
JP4619539B2 (en) * 1998-11-03 2011-01-26 ウィリアム・マーシュ・ライス・ユニバーシティ Crystal nucleation and growth of single-walled carbon nanotubes from high temperature carbon monoxide gas
US6048740A (en) * 1998-11-05 2000-04-11 Sharp Laboratories Of America, Inc. Ferroelectric nonvolatile transistor and method of making same
US6705152B2 (en) * 2000-10-24 2004-03-16 Nanoproducts Corporation Nanostructured ceramic platform for micromachined devices and device arrays
US6232706B1 (en) * 1998-11-12 2001-05-15 The Board Of Trustees Of The Leland Stanford Junior University Self-oriented bundles of carbon nanotubes and method of making same
US6046107A (en) * 1998-12-17 2000-04-04 Industrial Technology Research Institute Electroless copper employing hypophosphite as a reducing agent
JP3943272B2 (en) 1999-01-18 2007-07-11 双葉電子工業株式会社 Film forming method of carbon nanotube
US6250984B1 (en) * 1999-01-25 2001-06-26 Agere Systems Guardian Corp. Article comprising enhanced nanotube emitter structure and process for fabricating article
WO2000048195A1 (en) 1999-02-12 2000-08-17 Board Of Trustees Operating Michigan State University Nanocapsules containing charged particles, their uses and methods of forming the same
US6280697B1 (en) * 1999-03-01 2001-08-28 The University Of North Carolina-Chapel Hill Nanotube-based high energy material and method
US6348295B1 (en) * 1999-03-26 2002-02-19 Massachusetts Institute Of Technology Methods for manufacturing electronic and electromechanical elements and devices by thin-film deposition and imaging
US6256767B1 (en) * 1999-03-29 2001-07-03 Hewlett-Packard Company Demultiplexer for a molecular wire crossbar network (MWCN DEMUX)
US6518156B1 (en) * 1999-03-29 2003-02-11 Hewlett-Packard Company Configurable nanoscale crossbar electronic circuits made by electrochemical reaction
US6314019B1 (en) 1999-03-29 2001-11-06 Hewlett-Packard Company Molecular-wire crossbar interconnect (MWCI) for signal routing and communications
US6128214A (en) 1999-03-29 2000-10-03 Hewlett-Packard Molecular wire crossbar memory
US6105381A (en) * 1999-03-31 2000-08-22 International Business Machines Corporation Method and apparatus for cooling GMR heads for magnetic hard disks
AUPP976499A0 (en) 1999-04-16 1999-05-06 Commonwealth Scientific And Industrial Research Organisation Multilayer carbon nanotube films
KR20000074609A (en) * 1999-05-24 2000-12-15 김순택 Carbon nano tube field emission array and fabricating method thereof
US6177703B1 (en) * 1999-05-28 2001-01-23 Vlsi Technology, Inc. Method and apparatus for producing a single polysilicon flash EEPROM having a select transistor and a floating gate transistor
EP1059266A3 (en) * 1999-06-11 2000-12-20 Iljin Nanotech Co., Ltd. Mass synthesis method of high purity carbon nanotubes vertically aligned over large-size substrate using thermal chemical vapor deposition
US6361861B2 (en) * 1999-06-14 2002-03-26 Battelle Memorial Institute Carbon nanotubes on a substrate
US6322713B1 (en) * 1999-07-15 2001-11-27 Agere Systems Guardian Corp. Nanoscale conductive connectors and method for making same
JP4063451B2 (en) 1999-07-26 2008-03-19 双葉電子工業株式会社 Carbon nanotube pattern formation method
US6277318B1 (en) * 1999-08-18 2001-08-21 Agere Systems Guardian Corp. Method for fabrication of patterned carbon nanotube films
US6062931A (en) * 1999-09-01 2000-05-16 Industrial Technology Research Institute Carbon nanotube emitter with triode structure
WO2001039292A2 (en) * 1999-11-29 2001-05-31 Trustees Of The University Of Pennsylvania Fabrication of nanometer size gaps on an electrode
US6198655B1 (en) * 1999-12-10 2001-03-06 The Regents Of The University Of California Electrically addressable volatile non-volatile molecular-based switching devices
KR20010055501A (en) 1999-12-10 2001-07-04 김순택 Method for forming cathode of field emission display
KR20010056153A (en) * 1999-12-14 2001-07-04 구자홍 Field emission display device and its fabrication method
KR20010063852A (en) * 1999-12-24 2001-07-09 박종섭 A method for forming a self aligned contact of semiconductor device
KR100477739B1 (en) * 1999-12-30 2005-03-18 삼성에스디아이 주식회사 Field emission device and driving method thereof
DE10006964C2 (en) 2000-02-16 2002-01-31 Infineon Technologies Ag Electronic component with a conductive connection between two conductive layers and method for producing an electronic component
US6364409B1 (en) * 2000-02-18 2002-04-02 The Coleman Company, Inc. Folding chair
JP3730476B2 (en) * 2000-03-31 2006-01-05 株式会社東芝 Field emission cold cathode and manufacturing method thereof
US6495116B1 (en) * 2000-04-10 2002-12-17 Lockheed Martin Corporation Net shape manufacturing using carbon nanotubes
DE06121351T1 (en) * 2000-04-19 2009-01-29 Agfa Graphics N.V. Photosensitive lithographic printing plate and method of making a printing plate
KR100343205B1 (en) * 2000-04-26 2002-07-10 김순택 Field emission array using carbon nanotube and fabricating method thereof
US6413487B1 (en) * 2000-06-02 2002-07-02 The Board Of Regents Of The University Of Oklahoma Method and apparatus for producing carbon nanotubes
US6443901B1 (en) * 2000-06-15 2002-09-03 Koninklijke Philips Electronics N.V. Capacitive micromachined ultrasonic transducers
EP1170799A3 (en) 2000-07-04 2009-04-01 Infineon Technologies AG Electronic device and method of manufacture of an electronic device
DE10134866B4 (en) * 2000-07-18 2005-08-11 Lg Electronics Inc. Method of horizontally growing carbon nanotubes and field effect transistor using the process grown carbon nanotubes
DE10041378C1 (en) * 2000-08-23 2002-05-16 Infineon Technologies Ag MRAM configuration
KR100376768B1 (en) 2000-08-23 2003-03-19 한국과학기술연구원 Parallel and selective growth and connection method of carbon nanotubes on the substrates for electronic-spintronic device applications
US6566983B2 (en) * 2000-09-02 2003-05-20 Lg Electronics Inc. Saw filter using a carbon nanotube and method for manufacturing the same
US6716409B2 (en) * 2000-09-18 2004-04-06 President And Fellows Of The Harvard College Fabrication of nanotube microscopy tips
US6495258B1 (en) 2000-09-20 2002-12-17 Auburn University Structures with high number density of carbon nanotubes and 3-dimensional distribution
US6354133B1 (en) * 2000-10-25 2002-03-12 Advanced Micro Devices, Inc. Use of carbon nanotubes to calibrate conventional tips used in AFM
US6495905B2 (en) * 2000-11-09 2002-12-17 Texas Instruments Incorporated Nanomechanical switches and circuits
US6400088B1 (en) * 2000-11-15 2002-06-04 Trw Inc. Infrared carbon nanotube detector
KR20030059291A (en) 2000-11-29 2003-07-07 닛본 덴끼 가부시끼가이샤 Pattern forming method for carbon nanotube, and field emission cold cathode and method of manufacturing the cold cathode
AU2002229046B2 (en) 2000-12-11 2006-05-18 President And Fellows Of Harvard College Nanosensors
US6423583B1 (en) * 2001-01-03 2002-07-23 International Business Machines Corporation Methodology for electrically induced selective breakdown of nanotubes
US6358756B1 (en) * 2001-02-07 2002-03-19 Micron Technology, Inc. Self-aligned, magnetoresistive random-access memory (MRAM) structure utilizing a spacer containment scheme
US6448701B1 (en) * 2001-03-09 2002-09-10 The United States Of America As Represented By The Secretary Of The Navy Self-aligned integrally gated nanofilament field emitter cell and array
US6541309B2 (en) * 2001-03-21 2003-04-01 Hewlett-Packard Development Company Lp Fabricating a molecular electronic device having a protective barrier layer
CA2442310A1 (en) 2001-03-26 2002-10-03 Eikos, Inc. Coatings containing carbon nanotubes
US6803840B2 (en) 2001-03-30 2004-10-12 California Institute Of Technology Pattern-aligned carbon nanotube growth and tunable resonator apparatus
US6611033B2 (en) * 2001-04-12 2003-08-26 Ibm Corporation Micromachined electromechanical (MEM) random access memory array and method of making same
US20020160111A1 (en) * 2001-04-25 2002-10-31 Yi Sun Method for fabrication of field emission devices using carbon nanotube film as a cathode
KR100434369B1 (en) * 2001-05-04 2004-06-04 엘지전자 주식회사 The nonvolatile memory device of the carbon nanotube
JP4207398B2 (en) * 2001-05-21 2009-01-14 富士ゼロックス株式会社 Method for manufacturing wiring of carbon nanotube structure, wiring of carbon nanotube structure, and carbon nanotube device using the same
WO2002095097A1 (en) * 2001-05-21 2002-11-28 Trustees Of Boston College, The Varied morphology carbon nanotubes and methods for their manufacture
US6426687B1 (en) 2001-05-22 2002-07-30 The Aerospace Corporation RF MEMS switch
US6858455B2 (en) * 2001-05-25 2005-02-22 Ut-Battelle, Llc Gated fabrication of nanostructure field emission cathode material within a device
US20040023253A1 (en) 2001-06-11 2004-02-05 Sandeep Kunwar Device structure for closely spaced electrodes
DE10134665C1 (en) * 2001-07-20 2002-09-05 Infineon Technologies Ag Operating method for semiconductor element has differential resistance switched to lesser value above given current limit
US6924538B2 (en) * 2001-07-25 2005-08-02 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US7259410B2 (en) 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US6643165B2 (en) * 2001-07-25 2003-11-04 Nantero, Inc. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US7566478B2 (en) * 2001-07-25 2009-07-28 Nantero, Inc. Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles
US6919592B2 (en) * 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US6706402B2 (en) * 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6574130B2 (en) * 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
WO2003013199A2 (en) 2001-07-27 2003-02-13 Eikos, Inc. Conformal coatings comprising carbon nanotubes
US8715790B2 (en) 2001-07-27 2014-05-06 University Of Surrey Production of carbon nanotubes
KR100455284B1 (en) 2001-08-14 2004-11-12 삼성전자주식회사 High-throughput sensor for detecting biomolecules using carbon nanotubes
JP4306990B2 (en) 2001-10-18 2009-08-05 独立行政法人産業技術総合研究所 Nonlinear optical element
US6586965B2 (en) * 2001-10-29 2003-07-01 Hewlett Packard Development Company Lp Molecular crossbar latch
US6645628B2 (en) 2001-11-13 2003-11-11 The United States Of America As Represented By The Secretary Of The Air Force Carbon nanotube coated anode
US6784028B2 (en) * 2001-12-28 2004-08-31 Nantero, Inc. Methods of making electromechanical three-trace junction devices
US20040132070A1 (en) * 2002-01-16 2004-07-08 Nanomix, Inc. Nonotube-based electronic detection of biological molecules
US6894359B2 (en) 2002-09-04 2005-05-17 Nanomix, Inc. Sensitivity control for nanotube sensors
AU2003216070A1 (en) 2002-01-18 2003-09-02 California Institute Of Technology Array-based architecture for molecular electronics
EP1341184B1 (en) * 2002-02-09 2005-09-14 Samsung Electronics Co., Ltd. Memory device utilizing carbon nanotubes and method of fabricating the memory device
US6889216B2 (en) 2002-03-12 2005-05-03 Knowm Tech, Llc Physical neural network design incorporating nanotechnology
US6858197B1 (en) 2002-03-13 2005-02-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Controlled patterning and growth of single wall and multi-wall carbon nanotubes
US6919730B2 (en) 2002-03-18 2005-07-19 Honeywell International, Inc. Carbon nanotube sensor
US7049625B2 (en) * 2002-03-18 2006-05-23 Max-Planck-Gesellschaft Zur Fonderung Der Wissenschaften E.V. Field effect transistor memory cell, memory device and method for manufacturing a field effect transistor memory cell
US6899945B2 (en) 2002-03-19 2005-05-31 William Marsh Rice University Entangled single-wall carbon nanotube solid material and methods for making same
US6872645B2 (en) 2002-04-02 2005-03-29 Nanosys, Inc. Methods of positioning and/or orienting nanostructures
US6946410B2 (en) 2002-04-05 2005-09-20 E. I. Du Pont De Nemours And Company Method for providing nano-structures of uniform length
AU2003229333A1 (en) 2002-05-21 2003-12-12 Eikos, Inc. Method for patterning carbon nanotube coating and carbon nanotube wiring
US6759693B2 (en) 2002-06-19 2004-07-06 Nantero, Inc. Nanotube permeable base transistor
US20040007528A1 (en) 2002-07-03 2004-01-15 The Regents Of The University Of California Intertwined, free-standing carbon nanotube mesh for use as separation, concentration, and/or filtration medium
US20040007258A1 (en) * 2002-07-10 2004-01-15 Lasker Diane R. Simple non-electric produce washer
JP4547852B2 (en) 2002-09-04 2010-09-22 富士ゼロックス株式会社 Manufacturing method of electrical parts
US7051945B2 (en) 2002-09-30 2006-05-30 Nanosys, Inc Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
WO2004051219A2 (en) * 2002-11-27 2004-06-17 Molecular Nanosystems, Inc. Nanotube chemical sensor based on work function of electrodes
JP4124635B2 (en) * 2002-12-05 2008-07-23 シャープ株式会社 Semiconductor memory device and memory cell array erasing method
US20040265550A1 (en) 2002-12-06 2004-12-30 Glatkowski Paul J. Optically transparent nanostructured electrical conductors
US6919740B2 (en) 2003-01-31 2005-07-19 Hewlett-Packard Development Company, Lp. Molecular-junction-nanowire-crossbar-based inverter, latch, and flip-flop circuits, and more complex circuits composed, in part, from molecular-junction-nanowire-crossbar-based inverter, latch, and flip-flop circuits
US6918284B2 (en) * 2003-03-24 2005-07-19 The United States Of America As Represented By The Secretary Of The Navy Interconnected networks of single-walled carbon nanotubes
US7294877B2 (en) 2003-03-28 2007-11-13 Nantero, Inc. Nanotube-on-gate FET structures and applications
WO2005019793A2 (en) 2003-05-14 2005-03-03 Nantero, Inc. Sensor platform using a horizontally oriented nanotube element
US20040238907A1 (en) 2003-06-02 2004-12-02 Pinkerton Joseph F. Nanoelectromechanical transistors and switch systems
US7280394B2 (en) 2003-06-09 2007-10-09 Nantero, Inc. Field effect devices having a drain controlled via a nanotube switching element
US6882256B1 (en) 2003-06-20 2005-04-19 Northrop Grumman Corporation Anchorless electrostatically activated micro electromechanical system switch
KR100568425B1 (en) * 2003-06-30 2006-04-05 주식회사 하이닉스반도체 Method of manufacturing bit line in a flash device
EP1665278A4 (en) 2003-08-13 2007-11-07 Nantero Inc Nanotube-based switching elements with multiple controls and circuits made from same
US7115960B2 (en) 2003-08-13 2006-10-03 Nantero, Inc. Nanotube-based switching elements
US6890780B2 (en) * 2003-10-10 2005-05-10 General Electric Company Method for forming an electrostatically-doped carbon nanotube device
US7354877B2 (en) 2003-10-29 2008-04-08 Lockheed Martin Corporation Carbon nanotube fabrics
US6969651B1 (en) 2004-03-26 2005-11-29 Lsi Logic Corporation Layout design and process to form nanotube cell for nanotube memory applications
JP2005285822A (en) * 2004-03-26 2005-10-13 Fujitsu Ltd Semiconductor device and semiconductor sensor
US7161403B2 (en) * 2004-06-18 2007-01-09 Nantero, Inc. Storage elements using nanotube switching elements
US6955937B1 (en) 2004-08-12 2005-10-18 Lsi Logic Corporation Carbon nanotube memory cell for integrated circuit structure with removable side spacers to permit access to memory cell and process for forming such memory cell
US20060237799A1 (en) 2005-04-21 2006-10-26 Lsi Logic Corporation Carbon nanotube memory cells having flat bottom electrode contact surface
US8513768B2 (en) 2005-05-09 2013-08-20 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7835170B2 (en) * 2005-05-09 2010-11-16 Nantero, Inc. Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
US7781862B2 (en) * 2005-05-09 2010-08-24 Nantero, Inc. Two-terminal nanotube devices and systems and methods of making same
US8008745B2 (en) * 2005-05-09 2011-08-30 Nantero, Inc. Latch circuits and operation circuits having scalable nonvolatile nanotube switches as electronic fuse replacement elements
US7479654B2 (en) * 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
US7394687B2 (en) * 2005-05-09 2008-07-01 Nantero, Inc. Non-volatile-shadow latch using a nanotube switch
US7598127B2 (en) 2005-05-12 2009-10-06 Nantero, Inc. Nanotube fuse structure
US7575693B2 (en) 2005-05-23 2009-08-18 Nantero, Inc. Method of aligning nanotubes and wires with an etched feature
US7915122B2 (en) 2005-06-08 2011-03-29 Nantero, Inc. Self-aligned cell integration scheme
US7541216B2 (en) * 2005-06-09 2009-06-02 Nantero, Inc. Method of aligning deposited nanotubes onto an etched feature using a spacer
US7402770B2 (en) 2005-06-10 2008-07-22 Lsi Logic Corporation Nano structure electrode design
US20060292716A1 (en) * 2005-06-27 2006-12-28 Lsi Logic Corporation Use selective growth metallization to improve electrical connection between carbon nanotubes and electrodes
US7538040B2 (en) 2005-06-30 2009-05-26 Nantero, Inc. Techniques for precision pattern transfer of carbon nanotubes from photo mask to wafers

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020130353A1 (en) * 1999-07-02 2002-09-19 Lieber Charles M. Nanoscopic wire-based devices, arrays, and methods of their manufacture
US6407443B2 (en) * 2000-03-01 2002-06-18 Hewlett-Packard Company Nanoscale patterning for the formation of extensive wires
US20020175390A1 (en) * 2001-04-03 2002-11-28 Goldstein Seth Copen Electronic circuit device, system, and method
US6432740B1 (en) * 2001-06-28 2002-08-13 Hewlett-Packard Company Fabrication of molecular electronic circuit by imprinting

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US7056758B2 (en) 2006-06-06
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