WO2003016590A3 - Device for supplying gas mixtures to a cvd reactor - Google Patents

Device for supplying gas mixtures to a cvd reactor Download PDF

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Publication number
WO2003016590A3
WO2003016590A3 PCT/DE2002/002592 DE0202592W WO03016590A3 WO 2003016590 A3 WO2003016590 A3 WO 2003016590A3 DE 0202592 W DE0202592 W DE 0202592W WO 03016590 A3 WO03016590 A3 WO 03016590A3
Authority
WO
WIPO (PCT)
Prior art keywords
supply line
cvd reactor
supplying gas
gas mixtures
carrier gas
Prior art date
Application number
PCT/DE2002/002592
Other languages
German (de)
French (fr)
Other versions
WO2003016590A2 (en
Inventor
Rudolf Kogler
Helmut Schoenherr
Silke Skrabl
Rolf Urschitz
Original Assignee
Infineon Technologies Ag
Rudolf Kogler
Helmut Schoenherr
Silke Skrabl
Rolf Urschitz
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Rudolf Kogler, Helmut Schoenherr, Silke Skrabl, Rolf Urschitz filed Critical Infineon Technologies Ag
Publication of WO2003016590A2 publication Critical patent/WO2003016590A2/en
Publication of WO2003016590A3 publication Critical patent/WO2003016590A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber

Abstract

The invention relates to a device comprising a supply line branch (Z1) for a gas mixture consisting of an atomized medium (M1) and a carrier gas (T) to a CVD reactor (R). The supply line branch (Z1) comprises a supply line for the liquid medium (M1), a supply line for the carrier gas (T) and a processing unit which is fed by the supply lines and is used to convert the liquid medium (M1) into a gaseous state using an injector valve (EV1) and to mix the medium (M1) with the carrier gas (T). The supply lines are respectively provided with a through flow control unit (DS11, DS12)
PCT/DE2002/002592 2001-08-01 2002-07-15 Device for supplying gas mixtures to a cvd reactor WO2003016590A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10137673.1 2001-08-01
DE2001137673 DE10137673A1 (en) 2001-08-01 2001-08-01 Device for supplying gas mixtures to a CVD reactor

Publications (2)

Publication Number Publication Date
WO2003016590A2 WO2003016590A2 (en) 2003-02-27
WO2003016590A3 true WO2003016590A3 (en) 2003-05-30

Family

ID=7693981

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/002592 WO2003016590A2 (en) 2001-08-01 2002-07-15 Device for supplying gas mixtures to a cvd reactor

Country Status (2)

Country Link
DE (1) DE10137673A1 (en)
WO (1) WO2003016590A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10337568A1 (en) * 2003-08-14 2005-03-17 Infineon Technologies Ag Gas supply arrangement, in particular for a CVD process reactor for growing an epitaxial layer
DE10345824A1 (en) * 2003-09-30 2005-05-04 Infineon Technologies Ag Arrangement for depositing atomic layers onto substrates used in the production of semiconductors comprises a source for trimethylaluminum vapor and a source for water connected together
US20090214777A1 (en) * 2008-02-22 2009-08-27 Demetrius Sarigiannis Multiple ampoule delivery systems
CN110016657B (en) * 2018-01-08 2020-06-19 北京北方华创微电子装备有限公司 Flow control method and device and reaction chamber

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5968588A (en) * 1997-03-17 1999-10-19 Applied Materials, Inc. In-situ liquid flow rate estimation and verification by sonic flow method
US6110531A (en) * 1991-02-25 2000-08-29 Symetrix Corporation Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition
US6176930B1 (en) * 1999-03-04 2001-01-23 Applied Materials, Inc. Apparatus and method for controlling a flow of process material to a deposition chamber
US6179925B1 (en) * 1999-05-14 2001-01-30 Applied Materials, Inc. Method and apparatus for improved control of process and purge material in substrate processing system
US6244575B1 (en) * 1996-10-02 2001-06-12 Micron Technology, Inc. Method and apparatus for vaporizing liquid precursors and system for using same
EP1113089A1 (en) * 1999-12-30 2001-07-04 Applied Materials, Inc. MOCVD of lead zirconate titanate films
EP1122335A1 (en) * 2000-02-01 2001-08-08 Applied Materials, Inc. Methods and apparatus for vaporization of liquids

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06291040A (en) * 1992-03-03 1994-10-18 Rintetsuku:Kk Method and apparatus for vaporizing and supplying liquid
JP3122311B2 (en) * 1994-06-29 2001-01-09 東京エレクトロン株式会社 Apparatus for supplying liquid material to film forming chamber and method of using the same
AU9507298A (en) * 1997-09-26 1999-04-23 Advanced Technology Materials, Inc. Liquid reagent delivery system
KR100273474B1 (en) * 1998-09-14 2000-12-15 이경수 Gas supply apparatus of chemical vapor deposition apparatus
JP4230596B2 (en) * 1999-03-12 2009-02-25 東京エレクトロン株式会社 Thin film formation method

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6110531A (en) * 1991-02-25 2000-08-29 Symetrix Corporation Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition
US6244575B1 (en) * 1996-10-02 2001-06-12 Micron Technology, Inc. Method and apparatus for vaporizing liquid precursors and system for using same
US5968588A (en) * 1997-03-17 1999-10-19 Applied Materials, Inc. In-situ liquid flow rate estimation and verification by sonic flow method
US6176930B1 (en) * 1999-03-04 2001-01-23 Applied Materials, Inc. Apparatus and method for controlling a flow of process material to a deposition chamber
US6179925B1 (en) * 1999-05-14 2001-01-30 Applied Materials, Inc. Method and apparatus for improved control of process and purge material in substrate processing system
EP1113089A1 (en) * 1999-12-30 2001-07-04 Applied Materials, Inc. MOCVD of lead zirconate titanate films
EP1122335A1 (en) * 2000-02-01 2001-08-08 Applied Materials, Inc. Methods and apparatus for vaporization of liquids

Also Published As

Publication number Publication date
WO2003016590A2 (en) 2003-02-27
DE10137673A1 (en) 2003-02-27

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