WO2003012851A3 - Method of etching ferroelectric layers - Google Patents

Method of etching ferroelectric layers Download PDF

Info

Publication number
WO2003012851A3
WO2003012851A3 PCT/US2002/024346 US0224346W WO03012851A3 WO 2003012851 A3 WO2003012851 A3 WO 2003012851A3 US 0224346 W US0224346 W US 0224346W WO 03012851 A3 WO03012851 A3 WO 03012851A3
Authority
WO
WIPO (PCT)
Prior art keywords
containing gas
etching
ferroelectric layers
gas
nitrogen
Prior art date
Application number
PCT/US2002/024346
Other languages
French (fr)
Other versions
WO2003012851A2 (en
Inventor
Hideyuki Yamauchi
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of WO2003012851A2 publication Critical patent/WO2003012851A2/en
Publication of WO2003012851A3 publication Critical patent/WO2003012851A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material

Abstract

A method of etching a ferroelectric layer comprises etching a ferroelectric layer using boron trichloride gas and at least one auxiliary gas selected from the group consisting of a carbon-containing gas and a nitrogen-containing gas. The carbon-containing gas may include CHF3 or C2H4. The nitrogen-containing gas may include N2 or NF3. The method reduces side etching of ferroelectric layers, and in particular, PZT-based ferroelectric layers and thereby improves electrical performance and reliability of devices made therefrom.
PCT/US2002/024346 2001-07-31 2002-07-31 Method of etching ferroelectric layers WO2003012851A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001232528A JP2003059906A (en) 2001-07-31 2001-07-31 Etching method, and method of forming capacitor
JP2001-232528 2001-07-31

Publications (2)

Publication Number Publication Date
WO2003012851A2 WO2003012851A2 (en) 2003-02-13
WO2003012851A3 true WO2003012851A3 (en) 2003-04-24

Family

ID=19064442

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/024346 WO2003012851A2 (en) 2001-07-31 2002-07-31 Method of etching ferroelectric layers

Country Status (4)

Country Link
US (1) US20030047532A1 (en)
JP (1) JP2003059906A (en)
TW (1) TW565886B (en)
WO (1) WO2003012851A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7217665B2 (en) 2002-11-20 2007-05-15 Applied Materials, Inc. Method of plasma etching high-K dielectric materials with high selectivity to underlying layers
CN100559592C (en) * 2003-04-15 2009-11-11 富士通微电子株式会社 The manufacture method of semiconductor device
EP1629529A2 (en) * 2003-05-30 2006-03-01 Tokyo Electron Limited Method and system for etching a high-k dielectric material
US6867053B2 (en) * 2003-07-28 2005-03-15 Infineon Technologies Ag Fabrication of a FeRAM capacitor using a noble metal hardmask
KR100732026B1 (en) 2005-04-08 2007-06-27 후지쯔 가부시끼가이샤 Method for fabricating semiconductor device
JP4515956B2 (en) * 2005-05-02 2010-08-04 株式会社日立ハイテクノロジーズ Sample etching method
US20100003828A1 (en) * 2007-11-28 2010-01-07 Guowen Ding Methods for adjusting critical dimension uniformity in an etch process with a highly concentrated unsaturated hydrocarbon gas
JP2009266952A (en) * 2008-04-23 2009-11-12 Seiko Epson Corp Method for manufacturing and manufacturing apparatus for device
DE112010003598T5 (en) * 2009-09-09 2013-01-24 Ulvac, Inc. Method for operating a substrate processing device
US10692759B2 (en) * 2018-07-17 2020-06-23 Applied Materials, Inc. Methods for manufacturing an interconnect structure for semiconductor devices

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5443688A (en) * 1993-12-02 1995-08-22 Raytheon Company Method of manufacturing a ferroelectric device using a plasma etching process
EP1001459A2 (en) * 1998-09-09 2000-05-17 Texas Instruments Incorporated Integrated circuit comprising a capacitor and method
US6100201A (en) * 1997-03-05 2000-08-08 Nec Corporation Method of forming a semiconductor memory device
WO2000049649A2 (en) * 1999-02-17 2000-08-24 Applied Materials, Inc. Method for preventing corrosion of a dielectric material
WO2001082344A2 (en) * 2000-04-21 2001-11-01 Applied Materials, Inc. Method of patterning lead zirconium titanate and barium strontium titanate
WO2002015250A1 (en) * 2000-08-11 2002-02-21 Infineon Technologies Ag Structuring of ferroelectric layers

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6232174B1 (en) * 1998-04-22 2001-05-15 Sharp Kabushiki Kaisha Methods for fabricating a semiconductor memory device including flattening of a capacitor dielectric film
US6620733B2 (en) * 2001-02-12 2003-09-16 Lam Research Corporation Use of hydrocarbon addition for the elimination of micromasking during etching of organic low-k dielectrics
US6559001B2 (en) * 2001-05-30 2003-05-06 International Business Machines Corporation Methods of patterning a multi-layer film stack and forming a lower electrode of a capacitor

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5443688A (en) * 1993-12-02 1995-08-22 Raytheon Company Method of manufacturing a ferroelectric device using a plasma etching process
US6100201A (en) * 1997-03-05 2000-08-08 Nec Corporation Method of forming a semiconductor memory device
EP1001459A2 (en) * 1998-09-09 2000-05-17 Texas Instruments Incorporated Integrated circuit comprising a capacitor and method
WO2000049649A2 (en) * 1999-02-17 2000-08-24 Applied Materials, Inc. Method for preventing corrosion of a dielectric material
WO2001082344A2 (en) * 2000-04-21 2001-11-01 Applied Materials, Inc. Method of patterning lead zirconium titanate and barium strontium titanate
WO2002015250A1 (en) * 2000-08-11 2002-02-21 Infineon Technologies Ag Structuring of ferroelectric layers

Also Published As

Publication number Publication date
JP2003059906A (en) 2003-02-28
WO2003012851A2 (en) 2003-02-13
TW565886B (en) 2003-12-11
US20030047532A1 (en) 2003-03-13

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