WO2003012828A3 - Systems and methods for measuring properties of conductive layers - Google Patents

Systems and methods for measuring properties of conductive layers Download PDF

Info

Publication number
WO2003012828A3
WO2003012828A3 PCT/US2002/028954 US0228954W WO03012828A3 WO 2003012828 A3 WO2003012828 A3 WO 2003012828A3 US 0228954 W US0228954 W US 0228954W WO 03012828 A3 WO03012828 A3 WO 03012828A3
Authority
WO
WIPO (PCT)
Prior art keywords
conductive layer
systems
contact surface
methods
conductive layers
Prior art date
Application number
PCT/US2002/028954
Other languages
French (fr)
Other versions
WO2003012828A2 (en
Inventor
Walter H Johnson
Torsten Borchers
Daniel Griffing
Andrei Danet
George Erskine
Original Assignee
Kla Tencor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Inc filed Critical Kla Tencor Inc
Publication of WO2003012828A2 publication Critical patent/WO2003012828A2/en
Publication of WO2003012828A3 publication Critical patent/WO2003012828A3/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06733—Geometry aspects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/14—Measuring resistance by measuring current or voltage obtained from a reference source
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Measuring Leads Or Probes (AREA)

Abstract

A pin (10) configured to be disposed within a probe (110) is provided. The probe (110) may be configured to measure a property of a conductive layer. The pin (10) may include a contact surface (12) which may be substantially planar. The pin (10) may also include a first portion (14) extending from the contact surface (12). A cross-sectional area of the first portion, in a direction substantially parallel to the contact surface, may be substantially equal to a surface area of the contact surface (12) across a length of the first portion (14). A system (108) configured to measure a property of a conductive layer is also provided. The system (108) may include a mounting device (112) and at least two probes (110) coupled to the mounting device (112). The probes may be configured to measure the property of a conductive layer. In addition, the mounting device (112) may be configured such that one of the probes (110) may contact the conductive layer during measurement.
PCT/US2002/028954 2001-04-09 2002-04-09 Systems and methods for measuring properties of conductive layers WO2003012828A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US28267601P 2001-04-09 2001-04-09
US60/282,676 2001-04-09

Publications (2)

Publication Number Publication Date
WO2003012828A2 WO2003012828A2 (en) 2003-02-13
WO2003012828A3 true WO2003012828A3 (en) 2003-04-24

Family

ID=23082619

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/028954 WO2003012828A2 (en) 2001-04-09 2002-04-09 Systems and methods for measuring properties of conductive layers

Country Status (2)

Country Link
US (1) US6815959B2 (en)
WO (1) WO2003012828A2 (en)

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US9063191B2 (en) * 2012-02-24 2015-06-23 Power Probe, Inc. Electrical test device and method
US7033873B1 (en) * 2002-09-18 2006-04-25 Advanced Micro Devices, Inc. Methods of controlling gate electrode doping, and systems for accomplishing same
TWI229191B (en) * 2003-03-10 2005-03-11 Inventec Corp Automatic test method
US20050253602A1 (en) * 2004-04-28 2005-11-17 Cram Daniel P Resilient contact probe apparatus, methods of using and making, and resilient contact probes
US7511510B2 (en) * 2005-11-30 2009-03-31 International Business Machines Corporation Nanoscale fault isolation and measurement system
US20070256937A1 (en) * 2006-05-04 2007-11-08 International Business Machines Corporation Apparatus and method for electrochemical processing of thin films on resistive substrates
TW200842318A (en) * 2007-04-24 2008-11-01 Nanya Technology Corp Method for measuring thin film thickness
US8350583B2 (en) * 2009-08-12 2013-01-08 International Business Machines Corporation Probe-able voltage contrast test structures
US8399266B2 (en) 2011-01-25 2013-03-19 International Business Machines Corporation Test structure for detection of gap in conductive layer of multilayer gate stack
US9780007B2 (en) 2012-01-04 2017-10-03 Globalfoundries Inc. LCR test circuit structure for detecting metal gate defect conditions
US9030219B2 (en) * 2012-03-01 2015-05-12 Kla-Tencor Corporation Variable pressure four-point coated probe pin device and method
US9435826B2 (en) 2012-05-08 2016-09-06 Kla-Tencor Corporation Variable spacing four-point probe pin device and method
KR20130141245A (en) * 2012-06-15 2013-12-26 삼성전기주식회사 Pin for substrate testing
JP6266209B2 (en) * 2012-12-25 2018-01-24 株式会社エンプラス Electrical contact and socket for electrical parts
JP6983093B2 (en) * 2018-03-27 2021-12-17 日東電工株式会社 Resistance measuring device, film manufacturing device and method for manufacturing conductive film
JP7019536B2 (en) * 2018-08-31 2022-02-15 三菱電機株式会社 Semiconductor device evaluation device and semiconductor device evaluation method
US11860189B2 (en) 2019-12-12 2024-01-02 Innova Electronics Corporation Rotational electrical probe
SE2251043A1 (en) * 2022-09-08 2024-03-09 Silex Microsystems Ab Microstructure inspection device and system and use of the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4989154A (en) * 1987-07-13 1991-01-29 Mitsubishi Petrochemical Company Ltd. Method of measuring resistivity, and apparatus therefor
US5214389A (en) * 1992-01-06 1993-05-25 Motorola, Inc. Multi-dimensional high-resolution probe for semiconductor measurements including piezoelectric transducer arrangement for controlling probe position
US5578504A (en) * 1993-07-16 1996-11-26 Shin-Etsu Handotai Co., Ltd. Method for determination of resistivity of N-type silicon epitaxial layer
US6023171A (en) * 1997-08-13 2000-02-08 International Business Machines Corporation Dual-contact probe tip for flying probe tester
US6323667B1 (en) * 1996-12-27 2001-11-27 Nhk Spring Co., Ltd. Contact probe unit

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3783375A (en) * 1973-02-21 1974-01-01 Westinghouse Electric Corp Means for calibrating a four-probe resistivity measuring device
US3992073A (en) * 1975-11-24 1976-11-16 Technical Wire Products, Inc. Multi-conductor probe
ZA812893B (en) * 1980-05-12 1982-05-26 Ncr Co Integrated circuit package having a plurality of pins for providing external electrical connections
US4423373A (en) * 1981-03-16 1983-12-27 Lecroy Research Systems Corporation Test probe
US4590422A (en) * 1981-07-30 1986-05-20 Pacific Western Systems, Inc. Automatic wafer prober having a probe scrub routine
US5225771A (en) * 1988-05-16 1993-07-06 Dri Technology Corp. Making and testing an integrated circuit using high density probe points
GB9418183D0 (en) * 1994-09-09 1994-10-26 Chan Tsing Y A Non-destructive method for determination of polar molecules on rigid and semi-rigid substrates
DE19538792C2 (en) * 1995-10-18 2000-08-03 Ibm Contact probe arrangement for electrically connecting a test device to the circular connection surfaces of a test object
JP2000206146A (en) * 1999-01-19 2000-07-28 Mitsubishi Electric Corp Probe needle
US6366103B1 (en) * 1999-07-06 2002-04-02 David Cheng Multiple test probe system

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4989154A (en) * 1987-07-13 1991-01-29 Mitsubishi Petrochemical Company Ltd. Method of measuring resistivity, and apparatus therefor
US5214389A (en) * 1992-01-06 1993-05-25 Motorola, Inc. Multi-dimensional high-resolution probe for semiconductor measurements including piezoelectric transducer arrangement for controlling probe position
US5578504A (en) * 1993-07-16 1996-11-26 Shin-Etsu Handotai Co., Ltd. Method for determination of resistivity of N-type silicon epitaxial layer
US6323667B1 (en) * 1996-12-27 2001-11-27 Nhk Spring Co., Ltd. Contact probe unit
US6023171A (en) * 1997-08-13 2000-02-08 International Business Machines Corporation Dual-contact probe tip for flying probe tester

Also Published As

Publication number Publication date
US20030060092A1 (en) 2003-03-27
US6815959B2 (en) 2004-11-09
WO2003012828A2 (en) 2003-02-13

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