WO2003010833A3 - Flip chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding - Google Patents

Flip chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding Download PDF

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Publication number
WO2003010833A3
WO2003010833A3 PCT/US2002/023120 US0223120W WO03010833A3 WO 2003010833 A3 WO2003010833 A3 WO 2003010833A3 US 0223120 W US0223120 W US 0223120W WO 03010833 A3 WO03010833 A3 WO 03010833A3
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
submount
flip
attach material
electrode
Prior art date
Application number
PCT/US2002/023120
Other languages
French (fr)
Other versions
WO2003010833A2 (en
Inventor
David Slater
Jayesh Bharathan
John Edmond
Mark Raffetto
Anwar Mohammed
Gerry Negley
Peter Andrews
Original Assignee
Cree Inc
Cree Microwave Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc, Cree Microwave Inc filed Critical Cree Inc
Priority to AT02752483T priority Critical patent/ATE527698T1/en
Priority to JP2003516109A priority patent/JP2005510043A/en
Priority to CA002454797A priority patent/CA2454797A1/en
Priority to KR10-2004-7001063A priority patent/KR20040029381A/en
Priority to EP02752483A priority patent/EP1417722B1/en
Publication of WO2003010833A2 publication Critical patent/WO2003010833A2/en
Publication of WO2003010833A3 publication Critical patent/WO2003010833A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04026—Bonding areas specifically adapted for layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
    • H01L2224/26152—Auxiliary members for layer connectors, e.g. spacers being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/26175—Flow barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Abstract

Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy. Light emitting device dies having a B-stage curable die epoxy are also provided.
PCT/US2002/023120 2001-07-23 2002-07-22 Flip chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding WO2003010833A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
AT02752483T ATE527698T1 (en) 2001-07-23 2002-07-22 FLIP-CHIP BONDING OF LIGHT-EMITTING CHIPS
JP2003516109A JP2005510043A (en) 2001-07-23 2002-07-22 Light emitting device suitable for flip chip bonding and flip chip bonding of light emitting devices
CA002454797A CA2454797A1 (en) 2001-07-23 2002-07-22 Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding
KR10-2004-7001063A KR20040029381A (en) 2001-07-23 2002-07-22 Flip chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding
EP02752483A EP1417722B1 (en) 2001-07-23 2002-07-22 Flip-chip bonding of semiconductor light emitting chips

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US30731101P 2001-07-23 2001-07-23
US60/307,311 2001-07-23
US10/185,252 US6888167B2 (en) 2001-07-23 2002-06-27 Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding
US10/185,252 2002-06-27

Publications (2)

Publication Number Publication Date
WO2003010833A2 WO2003010833A2 (en) 2003-02-06
WO2003010833A3 true WO2003010833A3 (en) 2004-03-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/023120 WO2003010833A2 (en) 2001-07-23 2002-07-22 Flip chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding

Country Status (9)

Country Link
US (3) US6888167B2 (en)
EP (2) EP1417722B1 (en)
JP (1) JP2005510043A (en)
KR (1) KR20040029381A (en)
CN (1) CN100392874C (en)
AT (1) ATE527698T1 (en)
CA (1) CA2454797A1 (en)
TW (1) TW578276B (en)
WO (1) WO2003010833A2 (en)

Families Citing this family (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6747298B2 (en) * 2001-07-23 2004-06-08 Cree, Inc. Collets for bonding of light emitting diodes having shaped substrates
EP2287930B1 (en) 2002-07-22 2019-06-05 Cree, Inc. Light emitting diode including barrier layers and manufacturing method therefor
US7009199B2 (en) * 2002-10-22 2006-03-07 Cree, Inc. Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current
KR101045160B1 (en) * 2002-12-20 2011-06-30 크리 인코포레이티드 Methods of forming semiconductor devices having self aligned semiconductor mesas and contact layers and related devices
US20040188696A1 (en) 2003-03-28 2004-09-30 Gelcore, Llc LED power package
DE10314876B4 (en) * 2003-04-01 2008-02-14 Infineon Technologies Ag Method for the multi-stage production of diffusion solder joints and its use for power components with semiconductor chips
JP4766845B2 (en) * 2003-07-25 2011-09-07 シャープ株式会社 Nitride-based compound semiconductor light-emitting device and method for manufacturing the same
JP2005203519A (en) * 2004-01-14 2005-07-28 Sumitomo Electric Ind Ltd Semiconductor light emitting device
TWI230425B (en) 2004-02-06 2005-04-01 South Epitaxy Corp Bumping process for light emitting diode
CN100347867C (en) * 2004-02-26 2007-11-07 元砷光电科技股份有限公司 Technique of solder ball for manufacutirng LED
US7419912B2 (en) * 2004-04-01 2008-09-02 Cree, Inc. Laser patterning of light emitting devices
US7462861B2 (en) * 2004-04-28 2008-12-09 Cree, Inc. LED bonding structures and methods of fabricating LED bonding structures
WO2006005062A2 (en) * 2004-06-30 2006-01-12 Cree, Inc. Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices
JP4644193B2 (en) * 2004-07-12 2011-03-02 ローム株式会社 Semiconductor light emitting device
US7405093B2 (en) * 2004-08-18 2008-07-29 Cree, Inc. Methods of assembly for a semiconductor light emitting device package
US8174037B2 (en) 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
US8513686B2 (en) * 2004-09-22 2013-08-20 Cree, Inc. High output small area group III nitride LEDs
US7259402B2 (en) * 2004-09-22 2007-08-21 Cree, Inc. High efficiency group III nitride-silicon carbide light emitting diode
US7737459B2 (en) * 2004-09-22 2010-06-15 Cree, Inc. High output group III nitride light emitting diodes
US8288942B2 (en) * 2004-12-28 2012-10-16 Cree, Inc. High efficacy white LED
TWI422044B (en) * 2005-06-30 2014-01-01 Cree Inc Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices
US20070015300A1 (en) * 2005-07-15 2007-01-18 Yu-Chuan Liu Method for fabricating a light-emitting device
US20070063344A1 (en) * 2005-09-22 2007-03-22 Chun-Hung Lin Chip package structure and bumping process
US7772604B2 (en) 2006-01-05 2010-08-10 Illumitex Separate optical device for directing light from an LED
KR20140116536A (en) * 2006-05-31 2014-10-02 크리, 인코포레이티드 Lighting device and method of lighting
DE102006033873A1 (en) * 2006-07-21 2008-01-24 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Radiation-emitting device with a plurality of radiation-emitting components and illumination device
US7635869B2 (en) 2006-09-14 2009-12-22 Lumination Llc Support with recessed electrically conductive chip attachment material for flip-chip bonding a light emitting chip
US8087960B2 (en) 2006-10-02 2012-01-03 Illumitex, Inc. LED system and method
US10873002B2 (en) * 2006-10-20 2020-12-22 Cree, Inc. Permanent wafer bonding using metal alloy preform discs
US20080121911A1 (en) * 2006-11-28 2008-05-29 Cree, Inc. Optical preforms for solid state light emitting dice, and methods and systems for fabricating and assembling same
EP3848970A1 (en) 2007-01-22 2021-07-14 Cree, Inc. Multiple light emitting diode emitter
TW200837943A (en) * 2007-01-22 2008-09-16 Led Lighting Fixtures Inc Fault tolerant light emitters, systems incorporating fault tolerant light emitters and methods of fabricating fault tolerant light emitters
US20080283864A1 (en) * 2007-05-16 2008-11-20 Letoquin Ronan P Single Crystal Phosphor Light Conversion Structures for Light Emitting Devices
JP4987632B2 (en) * 2007-08-30 2012-07-25 株式会社東芝 Semiconductor device manufacturing method, submount manufacturing method, and electronic component
US8008707B2 (en) 2007-12-14 2011-08-30 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device provided with charge storage layer in memory cell
JP2011512037A (en) 2008-02-08 2011-04-14 イルミテックス， インコーポレイテッド System and method for emitter layer shaping
US7791101B2 (en) * 2008-03-28 2010-09-07 Cree, Inc. Indium gallium nitride-based ohmic contact layers for gallium nitride-based devices
US9147812B2 (en) * 2008-06-24 2015-09-29 Cree, Inc. Methods of assembly for a semiconductor light emitting device package
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
US20100248424A1 (en) * 2009-03-27 2010-09-30 Intellectual Business Machines Corporation Self-Aligned Chip Stacking
US9437785B2 (en) * 2009-08-10 2016-09-06 Cree, Inc. Light emitting diodes including integrated backside reflector and die attach
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
DE102010009717A1 (en) 2010-03-01 2011-09-01 Osram Opto Semiconductors Gmbh LED chip
US9991427B2 (en) * 2010-03-08 2018-06-05 Cree, Inc. Photonic crystal phosphor light conversion structures for light emitting devices
US8519298B2 (en) * 2010-03-25 2013-08-27 Veeco Instruments, Inc. Split laser scribe
TWI407536B (en) 2010-12-10 2013-09-01 Univ Nat Cheng Kung Method for manufacturing heat dissipation bulk of semiconductor device
TW201230910A (en) * 2011-01-11 2012-07-16 Hon Hai Prec Ind Co Ltd The method of manufacturing the LED lightbar and the equipment thereof
DE102011112000B4 (en) 2011-08-31 2023-11-30 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung LED chip
US8426255B2 (en) * 2011-09-14 2013-04-23 Chipmos Technologies, Inc. Chip package structure and method for manufacturing the same
US11160148B2 (en) 2017-06-13 2021-10-26 Ideal Industries Lighting Llc Adaptive area lamp
US11792898B2 (en) 2012-07-01 2023-10-17 Ideal Industries Lighting Llc Enhanced fixtures for area lighting
US8933433B2 (en) 2012-07-30 2015-01-13 LuxVue Technology Corporation Method and structure for receiving a micro device
US9484504B2 (en) 2013-05-14 2016-11-01 Apple Inc. Micro LED with wavelength conversion layer
US9111464B2 (en) 2013-06-18 2015-08-18 LuxVue Technology Corporation LED display with wavelength conversion layer
US9671362B2 (en) * 2013-07-29 2017-06-06 Honeywell International Inc. ph sensor with bonding agent disposed in a pattern
US9664641B2 (en) 2013-07-29 2017-05-30 Honeywell International Inc. pH sensor with substrate or bonding layer configured to maintain piezoresistance of the ISFET die
US9972557B2 (en) 2014-12-11 2018-05-15 Stmicroelectronics Pte Ltd Integrated circuit (IC) package with a solder receiving area and associated methods
DE102015002176A1 (en) * 2015-02-24 2016-08-25 Jenoptik Laser Gmbh Method of making a diode laser and diode laser
CN113345988A (en) 2015-10-01 2021-09-03 克利公司 Light emitting device comprising flip chip light emitting diode
US10529696B2 (en) 2016-04-12 2020-01-07 Cree, Inc. High density pixelated LED and devices and methods thereof
CN105903639B (en) * 2016-05-20 2018-06-26 中国电子科技集团公司第十研究所 Full-automatic chip attachment X-shaped point dips in rubber head
CN105921356B (en) * 2016-05-20 2018-06-26 中国电子科技集团公司第十研究所 Automatically chip attachment is back-shaped dips in rubber head
KR20170139924A (en) 2016-06-10 2017-12-20 엘지전자 주식회사 Transparent light-emitting diode film
US10312415B2 (en) 2017-06-19 2019-06-04 Microsoft Technology Licensing, Llc Flexible electronic assembly with semiconductor die
EP3662514A1 (en) 2017-08-03 2020-06-10 Cree, Inc. High density pixelated-led chips and chip array devices, and fabrication methods
US10734363B2 (en) 2017-08-03 2020-08-04 Cree, Inc. High density pixelated-LED chips and chip array devices
US11031527B2 (en) 2018-01-29 2021-06-08 Creeled, Inc. Reflective layers for light-emitting diodes
US11387389B2 (en) 2018-01-29 2022-07-12 Creeled, Inc. Reflective layers for light-emitting diodes
US11923481B2 (en) 2018-01-29 2024-03-05 Creeled, Inc. Reflective layers for light-emitting diodes
US10529773B2 (en) 2018-02-14 2020-01-07 Cree, Inc. Solid state lighting devices with opposing emission directions
CN109346405B (en) * 2018-11-23 2021-12-03 江苏新广联科技股份有限公司 Preparation method of GaN-based SBD flip chip
US10879441B2 (en) 2018-12-17 2020-12-29 Cree, Inc. Interconnects for light emitting diode chips
US10903265B2 (en) 2018-12-21 2021-01-26 Cree, Inc. Pixelated-LED chips and chip array devices, and fabrication methods
US10985294B2 (en) 2019-03-19 2021-04-20 Creeled, Inc. Contact structures for light emitting diode chips
US11094848B2 (en) 2019-08-16 2021-08-17 Creeled, Inc. Light-emitting diode chip structures
US11817526B2 (en) 2019-10-29 2023-11-14 Creeled, Inc. Texturing for high density pixelated-LED chips and chip array devices
US11437548B2 (en) 2020-10-23 2022-09-06 Creeled, Inc. Pixelated-LED chips with inter-pixel underfill materials, and fabrication methods

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS559442A (en) * 1978-07-05 1980-01-23 Matsushita Electric Ind Co Ltd Light emission element and its manufacturing method
JPS5664484A (en) * 1979-10-30 1981-06-01 Toshiba Corp Led device
FR2610451A1 (en) * 1987-01-30 1988-08-05 Radiotechnique Compelec Opto-electronic device comprising at least one component mounted on a support
WO2001047039A1 (en) * 1999-12-22 2001-06-28 Lumileds Lighting, U.S., Llc Method of making a iii-nitride light-emitting device with increased light generating capability
US20010006235A1 (en) * 1999-12-09 2001-07-05 Masafumi Ozawa Semiconductor light-emitting device and method of manufacturing the same and mounting plate

Family Cites Families (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS559442B2 (en) 1972-02-24 1980-03-10
JPS55148477A (en) 1979-05-08 1980-11-19 Sanyo Electric Co Ltd Fabricating method of light emitting diode
JPS57153479A (en) * 1981-03-17 1982-09-22 Matsushita Electric Ind Co Ltd Nitride gallium light emitting element
JPH01214141A (en) 1988-02-23 1989-08-28 Nec Corp Flip-chip type semiconductor device
GB2249428A (en) 1988-08-11 1992-05-06 Plessey Co Plc Connections for led arrays
US4918497A (en) 1988-12-14 1990-04-17 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
US5027168A (en) 1988-12-14 1991-06-25 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
JP2722601B2 (en) 1989-02-06 1998-03-04 松下電器産業株式会社 Die bonding apparatus and die bonding method
EP0397911A1 (en) * 1989-05-19 1990-11-22 Siemens Aktiengesellschaft Optoelectronic semiconductor device
US4966862A (en) 1989-08-28 1990-10-30 Cree Research, Inc. Method of production of light emitting diodes
US5068708A (en) * 1989-10-02 1991-11-26 Advanced Micro Devices, Inc. Ground plane for plastic encapsulated integrated circuit die packages
US5117279A (en) 1990-03-23 1992-05-26 Motorola, Inc. Semiconductor device having a low temperature uv-cured epoxy seal
US5210051A (en) 1990-03-27 1993-05-11 Cree Research, Inc. High efficiency light emitting diodes from bipolar gallium nitride
US5118584A (en) 1990-06-01 1992-06-02 Eastman Kodak Company Method of producing microbump circuits for flip chip mounting
JPH04152645A (en) 1990-10-17 1992-05-26 Toshiba Corp Collet for die bonding use
US5782102A (en) 1992-04-24 1998-07-21 Nippondenso Co., Ltd. Automotive air conditioner having condenser and evaporator provided within air duct
JPH0529364A (en) 1991-07-17 1993-02-05 Sharp Corp Method and apparatus for bonding semiconductor element
US5265792A (en) 1992-08-20 1993-11-30 Hewlett-Packard Company Light source and technique for mounting light emitting diodes
TW253997B (en) 1992-09-25 1995-08-11 Philips Electronics Nv
US5416342A (en) 1993-06-23 1995-05-16 Cree Research, Inc. Blue light-emitting diode with high external quantum efficiency
US5438477A (en) 1993-08-12 1995-08-01 Lsi Logic Corporation Die-attach technique for flip-chip style mounting of semiconductor dies
US5338944A (en) 1993-09-22 1994-08-16 Cree Research, Inc. Blue light-emitting diode with degenerate junction structure
US5393993A (en) 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
JP3054021B2 (en) 1993-12-27 2000-06-19 株式会社東芝 Compound semiconductor device
JPH07302858A (en) 1994-04-28 1995-11-14 Toshiba Corp Semiconductor package
JP2540787B2 (en) 1994-07-22 1996-10-09 日本電気株式会社 Method for manufacturing semiconductor device
US5539153A (en) 1994-08-08 1996-07-23 Hewlett-Packard Company Method of bumping substrates by contained paste deposition
US5604135A (en) 1994-08-12 1997-02-18 Cree Research, Inc. Method of forming green light emitting diode in silicon carbide
US5523589A (en) 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5631190A (en) 1994-10-07 1997-05-20 Cree Research, Inc. Method for producing high efficiency light-emitting diodes and resulting diode structures
US5694482A (en) 1994-11-08 1997-12-02 Universal Instruments Corporation System and method for locating solder bumps on semiconductor chips or chip carriers
JP3195720B2 (en) 1994-12-20 2001-08-06 シャープ株式会社 Multicolor LED element, LED display device using the multicolor LED element, and method of manufacturing multicolor LED element
EP1134805B1 (en) 1995-03-20 2004-07-21 Unitive International Limited Solder bump fabrication methods and structure including a titanium barrier layer
JP2625654B2 (en) * 1995-04-28 1997-07-02 日本電気株式会社 Semiconductor device and manufacturing method thereof
US5739554A (en) 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
DE19548046C2 (en) 1995-12-21 1998-01-15 Siemens Matsushita Components Method for producing contacts of electrical components suitable for flip-chip assembly
US6224690B1 (en) 1995-12-22 2001-05-01 International Business Machines Corporation Flip-Chip interconnections using lead-free solders
US5760479A (en) 1996-02-29 1998-06-02 Texas Instruments Incorporated Flip-chip die attachment for a high temperature die to substrate bond
US5836902A (en) 1996-12-03 1998-11-17 Gray; James C. Splint
US6333522B1 (en) * 1997-01-31 2001-12-25 Matsushita Electric Industrial Co., Ltd. Light-emitting element, semiconductor light-emitting device, and manufacturing methods therefor
JPH10256313A (en) 1997-03-12 1998-09-25 Dekusutaa Kk Method of electrically bonding electronic element chip to mounting board
US6201262B1 (en) 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
JPH11354848A (en) * 1998-06-10 1999-12-24 Matsushita Electron Corp Semiconductor light emitting device
US6189772B1 (en) 1998-08-31 2001-02-20 Micron Technology, Inc. Method of forming a solder ball
US6189208B1 (en) * 1998-09-11 2001-02-20 Polymer Flip Chip Corp. Flip chip mounting technique
JP2000123957A (en) 1998-10-14 2000-04-28 Co-Op Chem Co Ltd Electrode part for planar heating element
US6168972B1 (en) * 1998-12-22 2001-01-02 Fujitsu Limited Flip chip pre-assembly underfill process
JP2000208822A (en) 1999-01-11 2000-07-28 Matsushita Electronics Industry Corp Semiconductor light-emitting device
US6146984A (en) 1999-10-08 2000-11-14 Agilent Technologies Inc. Method and structure for uniform height solder bumps on a semiconductor wafer
US6214733B1 (en) 1999-11-17 2001-04-10 Elo Technologies, Inc. Process for lift off and handling of thin film materials
US6614056B1 (en) * 1999-12-01 2003-09-02 Cree Lighting Company Scalable led with improved current spreading structures
US6657236B1 (en) * 1999-12-03 2003-12-02 Cree Lighting Company Enhanced light extraction in LEDs through the use of internal and external optical elements
US6213789B1 (en) 1999-12-15 2001-04-10 Xerox Corporation Method and apparatus for interconnecting devices using an adhesive
US6885035B2 (en) 1999-12-22 2005-04-26 Lumileds Lighting U.S., Llc Multi-chip semiconductor LED assembly
US6486499B1 (en) * 1999-12-22 2002-11-26 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
US20020068373A1 (en) * 2000-02-16 2002-06-06 Nova Crystals, Inc. Method for fabricating light emitting diodes
DE20024002U1 (en) 2000-03-17 2009-03-26 Tridonicatco Gmbh & Co. Kg Power supply of light emitting diodes (LEDs)
WO2001084640A1 (en) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Gan-based light-emitting-diode chip and a method for producing a luminescent diode component
US6400033B1 (en) * 2000-06-01 2002-06-04 Amkor Technology, Inc. Reinforcing solder connections of electronic devices
US6506681B2 (en) * 2000-12-06 2003-01-14 Micron Technology, Inc. Thin flip—chip method
US20020076854A1 (en) * 2000-12-15 2002-06-20 Pierce John L. System, method and apparatus for constructing a semiconductor wafer-interposer using B-Stage laminates
US6547249B2 (en) 2001-03-29 2003-04-15 Lumileds Lighting U.S., Llc Monolithic series/parallel led arrays formed on highly resistive substrates
US6455878B1 (en) * 2001-05-15 2002-09-24 Lumileds Lighting U.S., Llc Semiconductor LED flip-chip having low refractive index underfill
US6498355B1 (en) 2001-10-09 2002-12-24 Lumileds Lighting, U.S., Llc High flux LED array

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS559442A (en) * 1978-07-05 1980-01-23 Matsushita Electric Ind Co Ltd Light emission element and its manufacturing method
JPS5664484A (en) * 1979-10-30 1981-06-01 Toshiba Corp Led device
FR2610451A1 (en) * 1987-01-30 1988-08-05 Radiotechnique Compelec Opto-electronic device comprising at least one component mounted on a support
US20010006235A1 (en) * 1999-12-09 2001-07-05 Masafumi Ozawa Semiconductor light-emitting device and method of manufacturing the same and mounting plate
WO2001047039A1 (en) * 1999-12-22 2001-06-28 Lumileds Lighting, U.S., Llc Method of making a iii-nitride light-emitting device with increased light generating capability

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 004, no. 036 (E - 003) 26 March 1980 (1980-03-26) *
PATENT ABSTRACTS OF JAPAN vol. 005, no. 125 (E - 069) 12 August 1981 (1981-08-12) *

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