WO2003009384A1 - Semiconductor storage - Google Patents

Semiconductor storage Download PDF

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Publication number
WO2003009384A1
WO2003009384A1 PCT/JP2002/004459 JP0204459W WO03009384A1 WO 2003009384 A1 WO2003009384 A1 WO 2003009384A1 JP 0204459 W JP0204459 W JP 0204459W WO 03009384 A1 WO03009384 A1 WO 03009384A1
Authority
WO
WIPO (PCT)
Prior art keywords
mis transistor
semiconductor storage
sense
write
transistor
Prior art date
Application number
PCT/JP2002/004459
Other languages
French (fr)
Japanese (ja)
Inventor
Kazuo Nakazato
Takeshi Hashimoto
Yutaka Ito
Masaya Muranaka
Teruaki KISU
Original Assignee
Hitachi, Ltd.
Hitachi Ulsi Systems Co., Ltd.
Kisu, Teruo
Kisu, Haruko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi, Ltd., Hitachi Ulsi Systems Co., Ltd., Kisu, Teruo, Kisu, Haruko filed Critical Hitachi, Ltd.
Publication of WO2003009384A1 publication Critical patent/WO2003009384A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate

Abstract

A semiconductor storage having memory cells each composed of a selection MIS transistor (Qt), a write MIS transistor (Qw), and a sense MIS transistor (Qs). The semiconductor storage is of a gain-cell type that amplifies the stored information by means of the sense MIS transistor (Qs). The write MIS transistor (Qw) is a vertical transistor fabricated over the sense MIS transistor (Qs), and a selection MIS transistor (Qt) is fabricated on the side face of the write MIS transistor (Qw) in a self-alignment manner. Consequently, the area of each memory cell is small.
PCT/JP2002/004459 2001-07-03 2002-05-08 Semiconductor storage WO2003009384A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-202212 2001-07-03
JP2001202212A JP2003017591A (en) 2001-07-03 2001-07-03 Semiconductor memory

Publications (1)

Publication Number Publication Date
WO2003009384A1 true WO2003009384A1 (en) 2003-01-30

Family

ID=19039056

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/004459 WO2003009384A1 (en) 2001-07-03 2002-05-08 Semiconductor storage

Country Status (2)

Country Link
JP (1) JP2003017591A (en)
WO (1) WO2003009384A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100454519C (en) * 2005-10-11 2009-01-21 尔必达存储器株式会社 Semiconductor device and manufacturing method thereof
CN105070717B (en) 2009-10-30 2019-01-01 株式会社半导体能源研究所 Semiconductor device
WO2011129233A1 (en) * 2010-04-16 2011-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8634228B2 (en) * 2010-09-02 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
WO2014157019A1 (en) * 2013-03-25 2014-10-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6370557A (en) * 1986-09-12 1988-03-30 Nec Corp Semiconductor memory cell
JPS6379369A (en) * 1986-09-24 1988-04-09 Hitachi Ltd Semiconductor storage device
US6075265A (en) * 1997-06-27 2000-06-13 Siemens Aktiengesellschaft DRAM cell arrangement and method for its fabrication
WO2000055906A1 (en) * 1999-03-17 2000-09-21 Hitachi, Ltd. Semiconductor device and method of manufacture thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058674A (en) * 1998-08-03 2000-02-25 Hitachi Ltd Semiconductor storage device and manufacture thereof
JP2000113683A (en) * 1998-10-02 2000-04-21 Hitachi Ltd Semiconductor device
TW461096B (en) * 1999-05-13 2001-10-21 Hitachi Ltd Semiconductor memory
US6515892B1 (en) * 1999-05-14 2003-02-04 Hitachi, Ltd. Semiconductor integrated circuit device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6370557A (en) * 1986-09-12 1988-03-30 Nec Corp Semiconductor memory cell
JPS6379369A (en) * 1986-09-24 1988-04-09 Hitachi Ltd Semiconductor storage device
US6075265A (en) * 1997-06-27 2000-06-13 Siemens Aktiengesellschaft DRAM cell arrangement and method for its fabrication
WO2000055906A1 (en) * 1999-03-17 2000-09-21 Hitachi, Ltd. Semiconductor device and method of manufacture thereof

Also Published As

Publication number Publication date
JP2003017591A (en) 2003-01-17

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