WO2003003476A3 - Microelectronic device and method of its manufacture - Google Patents

Microelectronic device and method of its manufacture Download PDF

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Publication number
WO2003003476A3
WO2003003476A3 PCT/IE2002/000074 IE0200074W WO03003476A3 WO 2003003476 A3 WO2003003476 A3 WO 2003003476A3 IE 0200074 W IE0200074 W IE 0200074W WO 03003476 A3 WO03003476 A3 WO 03003476A3
Authority
WO
WIPO (PCT)
Prior art keywords
field regions
photodiode
contaminants
defects
low
Prior art date
Application number
PCT/IE2002/000074
Other languages
French (fr)
Other versions
WO2003003476A2 (en
Inventor
Alan Mathewson
Alan Morrison
John Carlton Jackson
Original Assignee
Nat Microelectronic Res Ct
Alan Mathewson
Alan Morrison
John Carlton Jackson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Microelectronic Res Ct, Alan Mathewson, Alan Morrison, John Carlton Jackson filed Critical Nat Microelectronic Res Ct
Priority to AU2002309201A priority Critical patent/AU2002309201A1/en
Publication of WO2003003476A2 publication Critical patent/WO2003003476A2/en
Publication of WO2003003476A3 publication Critical patent/WO2003003476A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode

Abstract

A photodiode structure operable in Geiger mode is disclosed. The photodiode includes an effective area that comprises a multiplicity of high-field regions, each constituting a diode element at which avalanche multiplication can occur. The high-field regions are sized and spaced apart by low-field regions in the surrounding substrate. During manufacture, defects and contaminants are removed from the high-field regions into the surrounding low-field regions by gettering. The size of the high-field regions is chosen to ensure that the gettering process is effective. For example, they may be approximately 10mm in diameter. The spacing between the high-field regions is large enough to accommodate the gettered defects and contaminants in order that they have a minimal effect on the dark count of the photodiode.
PCT/IE2002/000074 2001-06-28 2002-06-05 Microelectronic device and method of its manufacture WO2003003476A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002309201A AU2002309201A1 (en) 2001-06-28 2002-06-05 Microelectronic device and method of its manufacture

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IES20010616 IES20010616A2 (en) 2001-06-28 2001-06-28 Microelectronic device and method of its manufacture
IES010616 2001-06-28

Publications (2)

Publication Number Publication Date
WO2003003476A2 WO2003003476A2 (en) 2003-01-09
WO2003003476A3 true WO2003003476A3 (en) 2003-12-24

Family

ID=11042806

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IE2002/000074 WO2003003476A2 (en) 2001-06-28 2002-06-05 Microelectronic device and method of its manufacture

Country Status (3)

Country Link
AU (1) AU2002309201A1 (en)
IE (1) IES20010616A2 (en)
WO (1) WO2003003476A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1623466A1 (en) 2003-05-14 2006-02-08 University College Cork-National University of Ireland, Cork A photodiode
RU2290721C2 (en) 2004-05-05 2006-12-27 Борис Анатольевич Долгошеин Silicon photoelectronic multiplier (alternatives) and locations for silicon photoelectronic multiplier
EP1679749A1 (en) 2005-01-11 2006-07-12 Ecole Polytechnique Federale De Lausanne Epfl - Sti - Imm - Lmis3 Semiconductor photodiode and method of making
US8093624B1 (en) 2006-02-15 2012-01-10 Massachusetts Institute Of Technology High fill-factor avalanche photodiode
WO2008004547A1 (en) 2006-07-03 2008-01-10 Hamamatsu Photonics K.K. Photodiode array
GB2485400B (en) * 2010-11-12 2014-12-10 Toshiba Res Europ Ltd Photon detector
CN112018142A (en) 2016-06-21 2020-12-01 深圳帧观德芯科技有限公司 Avalanche photodiode based image sensor
CN109459149A (en) * 2018-10-11 2019-03-12 桂林电子科技大学 A kind of measurement of high-precision single photon detection chip real time temperature and performance optimization system

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5857759A (en) * 1981-10-01 1983-04-06 Fujitsu Ltd Formation of guard ring of light sensible element
US4720735A (en) * 1982-08-31 1988-01-19 Nishizawa Junichi Phototransistor having a non-homogeneously base region
US4972244A (en) * 1988-06-16 1990-11-20 Commissariat A L'energie Atomique Photodiode and photodiode array on a II-VI material and processes for the production thereof
GB2258565A (en) * 1991-08-08 1993-02-10 Santa Barbara Res Center Indium antimonide (insb) photodetector with non-flashing light receiving surface
US5583352A (en) * 1994-04-29 1996-12-10 Eg&G Limited Low-noise, reach-through, avalanche photodiodes
WO2001078153A2 (en) * 2000-04-10 2001-10-18 Politecnico Di Milano Ultrasensitive photodetector with integrated pinhole for confocal microscopes

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5857759A (en) * 1981-10-01 1983-04-06 Fujitsu Ltd Formation of guard ring of light sensible element
US4720735A (en) * 1982-08-31 1988-01-19 Nishizawa Junichi Phototransistor having a non-homogeneously base region
US4972244A (en) * 1988-06-16 1990-11-20 Commissariat A L'energie Atomique Photodiode and photodiode array on a II-VI material and processes for the production thereof
GB2258565A (en) * 1991-08-08 1993-02-10 Santa Barbara Res Center Indium antimonide (insb) photodetector with non-flashing light receiving surface
US5583352A (en) * 1994-04-29 1996-12-10 Eg&G Limited Low-noise, reach-through, avalanche photodiodes
WO2001078153A2 (en) * 2000-04-10 2001-10-18 Politecnico Di Milano Ultrasensitive photodetector with integrated pinhole for confocal microscopes

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 007, no. 144 (E - 183) 23 June 1983 (1983-06-23) *

Also Published As

Publication number Publication date
AU2002309201A1 (en) 2003-03-03
IES20010616A2 (en) 2002-05-15
WO2003003476A2 (en) 2003-01-09

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