WO2003001581A3 - Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate - Google Patents

Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate Download PDF

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Publication number
WO2003001581A3
WO2003001581A3 PCT/US2002/019495 US0219495W WO03001581A3 WO 2003001581 A3 WO2003001581 A3 WO 2003001581A3 US 0219495 W US0219495 W US 0219495W WO 03001581 A3 WO03001581 A3 WO 03001581A3
Authority
WO
WIPO (PCT)
Prior art keywords
conductive material
microelectronic substrate
electrical
mechanical
methods
Prior art date
Application number
PCT/US2002/019495
Other languages
French (fr)
Other versions
WO2003001581A2 (en
Inventor
Whonchee Lee
Scott G Meikle
Scott E Moore
Trung T Doan
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/888,002 external-priority patent/US7160176B2/en
Priority claimed from US09/887,767 external-priority patent/US7094131B2/en
Priority claimed from US09/888,084 external-priority patent/US7112121B2/en
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to JP2003507878A priority Critical patent/JP4446271B2/en
Priority to EP02744464A priority patent/EP1399956A2/en
Priority to KR1020037016758A priority patent/KR100663662B1/en
Publication of WO2003001581A2 publication Critical patent/WO2003001581A2/en
Publication of WO2003001581A3 publication Critical patent/WO2003001581A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/046—Lapping machines or devices; Accessories designed for working plane surfaces using electric current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/16—Polishing
    • C25F3/30—Polishing of semiconducting materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F5/00—Electrolytic stripping of metallic layers or coatings
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP

Abstract

A method and apparatus for removing conductive material from a microelectronic substrate. In one embodiment, the method can include engaging a microelectronic substrate with a polishing surface of a polishing pad,electrically coupling a conductive material of the microelectronic substrate to a source of electrical potential,and oxidizing at least a portion of the conductive material by passing an electrical current through the conductive material from the source of electrical potential. For example, the method can include positioning first and second electrodes apart from a face surface of the microelectronic substrate, disposing an electrolytic fluid between the face surface and the electrodes with the electrodes in fluid communication with the electrolytic fluid, and movingat least one of the microelectronic and the polishing pad relative to the other.
PCT/US2002/019495 2001-06-21 2002-06-20 Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate WO2003001581A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003507878A JP4446271B2 (en) 2001-06-21 2002-06-20 Method and apparatus for electrically, mechanically and / or chemically removing a conductive material from a microelectronic substrate
EP02744464A EP1399956A2 (en) 2001-06-21 2002-06-20 Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate
KR1020037016758A KR100663662B1 (en) 2001-06-21 2002-06-20 Method and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US09/888,002 US7160176B2 (en) 2000-08-30 2001-06-21 Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate
US09/887,767 US7094131B2 (en) 2000-08-30 2001-06-21 Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material
US09/888,084 US7112121B2 (en) 2000-08-30 2001-06-21 Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate
US09/887,767 2001-06-21
US09/888,002 2001-06-21
US09/888,084 2001-06-21

Publications (2)

Publication Number Publication Date
WO2003001581A2 WO2003001581A2 (en) 2003-01-03
WO2003001581A3 true WO2003001581A3 (en) 2003-10-30

Family

ID=27420529

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/US2002/019496 WO2003001582A2 (en) 2001-06-21 2002-06-20 Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material
PCT/US2002/019495 WO2003001581A2 (en) 2001-06-21 2002-06-20 Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PCT/US2002/019496 WO2003001582A2 (en) 2001-06-21 2002-06-20 Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material

Country Status (6)

Country Link
EP (2) EP1399957A2 (en)
JP (2) JP4446271B2 (en)
KR (2) KR100663662B1 (en)
CN (1) CN100356523C (en)
AU (1) AU2002316303A1 (en)
WO (2) WO2003001582A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6848970B2 (en) 2002-09-16 2005-02-01 Applied Materials, Inc. Process control in electrochemically assisted planarization
US6837983B2 (en) * 2002-01-22 2005-01-04 Applied Materials, Inc. Endpoint detection for electro chemical mechanical polishing and electropolishing processes
US7842169B2 (en) 2003-03-04 2010-11-30 Applied Materials, Inc. Method and apparatus for local polishing control
US7998335B2 (en) 2005-06-13 2011-08-16 Cabot Microelectronics Corporation Controlled electrochemical polishing method

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5911619A (en) * 1997-03-26 1999-06-15 International Business Machines Corporation Apparatus for electrochemical mechanical planarization
US6033953A (en) * 1996-12-27 2000-03-07 Texas Instruments Incorporated Method for manufacturing dielectric capacitor, dielectric memory device
US6143155A (en) * 1998-06-11 2000-11-07 Speedfam Ipec Corp. Method for simultaneous non-contact electrochemical plating and planarizing of semiconductor wafers using a bipiolar electrode assembly
US6171467B1 (en) * 1997-11-25 2001-01-09 The John Hopkins University Electrochemical-control of abrasive polishing and machining rates
JP2001077117A (en) * 1999-09-07 2001-03-23 Sony Corp Manufacture of semiconductor device, and method and device for polishing
US20010036746A1 (en) * 2000-03-09 2001-11-01 Shuzo Sato Methods of producing and polishing semiconductor device and polishing apparatus
US20020052126A1 (en) * 2000-08-31 2002-05-02 Whonchee Lee Electro-mechanical polishing of platinum container structure
US20020070126A1 (en) * 2000-09-19 2002-06-13 Shuzo Sato Polishing method, polishing apparatus, plating method, and plating apparatus
WO2002064314A1 (en) * 2001-02-12 2002-08-22 Speedfam-Ipec Corporation Method and apparatus for electrochemical planarization of a workpiece

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01241129A (en) * 1988-03-23 1989-09-26 Toshiba Corp Manufacture of semiconductor device
KR960006714B1 (en) * 1990-05-28 1996-05-22 가부시끼가이샤 도시바 Semiconductor device fabrication process
KR100280107B1 (en) * 1998-05-07 2001-03-02 윤종용 How to form trench isolation
US6121152A (en) * 1998-06-11 2000-09-19 Integrated Process Equipment Corporation Method and apparatus for planarization of metallized semiconductor wafers using a bipolar electrode assembly

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6033953A (en) * 1996-12-27 2000-03-07 Texas Instruments Incorporated Method for manufacturing dielectric capacitor, dielectric memory device
US5911619A (en) * 1997-03-26 1999-06-15 International Business Machines Corporation Apparatus for electrochemical mechanical planarization
US6171467B1 (en) * 1997-11-25 2001-01-09 The John Hopkins University Electrochemical-control of abrasive polishing and machining rates
US6143155A (en) * 1998-06-11 2000-11-07 Speedfam Ipec Corp. Method for simultaneous non-contact electrochemical plating and planarizing of semiconductor wafers using a bipiolar electrode assembly
JP2001077117A (en) * 1999-09-07 2001-03-23 Sony Corp Manufacture of semiconductor device, and method and device for polishing
US20010036746A1 (en) * 2000-03-09 2001-11-01 Shuzo Sato Methods of producing and polishing semiconductor device and polishing apparatus
US20020052126A1 (en) * 2000-08-31 2002-05-02 Whonchee Lee Electro-mechanical polishing of platinum container structure
US20020070126A1 (en) * 2000-09-19 2002-06-13 Shuzo Sato Polishing method, polishing apparatus, plating method, and plating apparatus
WO2002064314A1 (en) * 2001-02-12 2002-08-22 Speedfam-Ipec Corporation Method and apparatus for electrochemical planarization of a workpiece

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 20 10 July 2001 (2001-07-10) *

Also Published As

Publication number Publication date
CN1516894A (en) 2004-07-28
CN100356523C (en) 2007-12-19
AU2002316303A1 (en) 2003-01-08
KR100663662B1 (en) 2007-01-03
EP1399957A2 (en) 2004-03-24
WO2003001581A2 (en) 2003-01-03
WO2003001582A2 (en) 2003-01-03
KR20040010773A (en) 2004-01-31
JP4446271B2 (en) 2010-04-07
KR20040021616A (en) 2004-03-10
EP1399956A2 (en) 2004-03-24
WO2003001582A3 (en) 2003-10-30
KR100598477B1 (en) 2006-07-11
JP2004531899A (en) 2004-10-14
JP2004531649A (en) 2004-10-14

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