WO2002103776A3 - Method for relating photolithography overlay target damage and chemical mechanical planarization (cmp) fault detection to cmp tool identification - Google Patents

Method for relating photolithography overlay target damage and chemical mechanical planarization (cmp) fault detection to cmp tool identification Download PDF

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Publication number
WO2002103776A3
WO2002103776A3 PCT/US2001/016213 US0116213W WO02103776A3 WO 2002103776 A3 WO2002103776 A3 WO 2002103776A3 US 0116213 W US0116213 W US 0116213W WO 02103776 A3 WO02103776 A3 WO 02103776A3
Authority
WO
WIPO (PCT)
Prior art keywords
cmp
mechanical planarization
photolithography overlay
fault detection
relating
Prior art date
Application number
PCT/US2001/016213
Other languages
French (fr)
Other versions
WO2002103776A2 (en
Inventor
Christopher A Bode
Anthony J Toprac
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Priority to PCT/US2001/016213 priority Critical patent/WO2002103776A2/en
Publication of WO2002103776A2 publication Critical patent/WO2002103776A2/en
Publication of WO2002103776A3 publication Critical patent/WO2002103776A3/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Abstract

A method is provided, the method comprising processing a workpiece (100), having a photolithography overlay target structure (520, 525, 530) disposed thereon, using a chemical-mechanical planarization (CMP) tool (105) and measuring a photolithography overlay parameter (11) using the photolithography overlay target structure (520, 525, 530). The method also comprises forming an output signal (125) corresponding to the photolithography overlay parameter (110) measured and to the chemical-mechanical planarization (CMP) tool (105) used and using the output signal (125) to improve at least one of accuracy in photolithography overlay metrology (110) and fault detection in chemical-mechanical planarization (CMP)(130, 150).
PCT/US2001/016213 2001-06-18 2001-06-18 Method for relating photolithography overlay target damage and chemical mechanical planarization (cmp) fault detection to cmp tool identification WO2002103776A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/US2001/016213 WO2002103776A2 (en) 2001-06-18 2001-06-18 Method for relating photolithography overlay target damage and chemical mechanical planarization (cmp) fault detection to cmp tool identification

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2001/016213 WO2002103776A2 (en) 2001-06-18 2001-06-18 Method for relating photolithography overlay target damage and chemical mechanical planarization (cmp) fault detection to cmp tool identification

Publications (2)

Publication Number Publication Date
WO2002103776A2 WO2002103776A2 (en) 2002-12-27
WO2002103776A3 true WO2002103776A3 (en) 2003-09-12

Family

ID=21742587

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/016213 WO2002103776A2 (en) 2001-06-18 2001-06-18 Method for relating photolithography overlay target damage and chemical mechanical planarization (cmp) fault detection to cmp tool identification

Country Status (1)

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WO (1) WO2002103776A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005004708B4 (en) * 2005-02-02 2006-11-02 Atmel Germany Gmbh Method for producing integrated circuits with at least one silicon germanium heterobipolar transistor
DE102005004709A1 (en) * 2005-02-02 2006-08-10 Atmel Germany Gmbh Process for the production of integrated circuits
DE102005004707B4 (en) * 2005-02-02 2009-04-09 Atmel Germany Gmbh Method for producing integrated circuits with silicon germanium heterobipolar transistors
DE102005021932A1 (en) * 2005-05-12 2006-11-16 Atmel Germany Gmbh Method for producing integrated circuits

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5933744A (en) * 1998-04-02 1999-08-03 Taiwan Semiconductor Manufacturing Co., Ltd. Alignment method for used in chemical mechanical polishing process
JPH11345791A (en) * 1998-06-03 1999-12-14 Nec Corp Semiconductor-wafer polishing-state monitoring device and polishing end-point detecting method
EP0987744A1 (en) * 1998-08-18 2000-03-22 International Business Machines Corporation Method for optimizing the control of metal CMP processes
US6100985A (en) * 1998-03-18 2000-08-08 Nova Measuring Instruments, Ltd. Method and apparatus for measurements of patterned structures
WO2000054325A1 (en) * 1999-03-10 2000-09-14 Nova Measuring Instruments Ltd. Method and apparatus for monitoring a chemical mechanical planarization process applied to metal-based patterned objects
US6230069B1 (en) * 1998-06-26 2001-05-08 Advanced Micro Devices, Inc. System and method for controlling the manufacture of discrete parts in semiconductor fabrication using model predictive control

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6100985A (en) * 1998-03-18 2000-08-08 Nova Measuring Instruments, Ltd. Method and apparatus for measurements of patterned structures
US5933744A (en) * 1998-04-02 1999-08-03 Taiwan Semiconductor Manufacturing Co., Ltd. Alignment method for used in chemical mechanical polishing process
JPH11345791A (en) * 1998-06-03 1999-12-14 Nec Corp Semiconductor-wafer polishing-state monitoring device and polishing end-point detecting method
US6425801B1 (en) * 1998-06-03 2002-07-30 Nec Corporation Polishing process monitoring method and apparatus, its endpoint detection method, and polishing machine using same
US6230069B1 (en) * 1998-06-26 2001-05-08 Advanced Micro Devices, Inc. System and method for controlling the manufacture of discrete parts in semiconductor fabrication using model predictive control
EP0987744A1 (en) * 1998-08-18 2000-03-22 International Business Machines Corporation Method for optimizing the control of metal CMP processes
WO2000054325A1 (en) * 1999-03-10 2000-09-14 Nova Measuring Instruments Ltd. Method and apparatus for monitoring a chemical mechanical planarization process applied to metal-based patterned objects

Also Published As

Publication number Publication date
WO2002103776A2 (en) 2002-12-27

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