WO2002103755A3 - Semiconductor die including conductive columns - Google Patents

Semiconductor die including conductive columns Download PDF

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Publication number
WO2002103755A3
WO2002103755A3 PCT/US2002/019073 US0219073W WO02103755A3 WO 2002103755 A3 WO2002103755 A3 WO 2002103755A3 US 0219073 W US0219073 W US 0219073W WO 02103755 A3 WO02103755 A3 WO 02103755A3
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WO
WIPO (PCT)
Prior art keywords
semiconductor die
including conductive
die including
conductive columns
aperture
Prior art date
Application number
PCT/US2002/019073
Other languages
French (fr)
Other versions
WO2002103755A2 (en
WO2002103755A9 (en
Inventor
Rajeev Joshi
Chung-Lin Wu
Original Assignee
Fairchild Semiconductor
Rajeev Joshi
Chung-Lin Wu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor, Rajeev Joshi, Chung-Lin Wu filed Critical Fairchild Semiconductor
Priority to AU2002322116A priority Critical patent/AU2002322116A1/en
Publication of WO2002103755A2 publication Critical patent/WO2002103755A2/en
Publication of WO2002103755A3 publication Critical patent/WO2002103755A3/en
Publication of WO2002103755A9 publication Critical patent/WO2002103755A9/en

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    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides

Abstract

A method for processing a semiconductor substrate is disclosed. The method includes providing a mask (28) having an aperture (25) on a semiconductor substrate (10) having a conductive region (12). An aperture (20) in the mask (28) is disposed over the conductive region (12). A pre-formed conductive column (30) is placed in the aperture (20) and is bonded to the conductive region (12).
PCT/US2002/019073 2001-06-15 2002-06-13 Semiconductor die including conductive columns WO2002103755A2 (en)

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AU2002322116A AU2002322116A1 (en) 2001-06-15 2002-06-13 Semiconductor die including conductive columns

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US09/881,787 US6683375B2 (en) 2001-06-15 2001-06-15 Semiconductor die including conductive columns
US09/881,787 2001-06-15

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Also Published As

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TWI263317B (en) 2006-10-01
WO2002103755A2 (en) 2002-12-27
US20040137724A1 (en) 2004-07-15
US7022548B2 (en) 2006-04-04
US6683375B2 (en) 2004-01-27
US20020192935A1 (en) 2002-12-19
AU2002322116A1 (en) 2003-01-02
WO2002103755A9 (en) 2004-12-16

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