WO2002101466A3 - Exposure control for phase shifting photolithographic masks - Google Patents

Exposure control for phase shifting photolithographic masks Download PDF

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Publication number
WO2002101466A3
WO2002101466A3 PCT/US2002/018480 US0218480W WO02101466A3 WO 2002101466 A3 WO2002101466 A3 WO 2002101466A3 US 0218480 W US0218480 W US 0218480W WO 02101466 A3 WO02101466 A3 WO 02101466A3
Authority
WO
WIPO (PCT)
Prior art keywords
masks
mask
phase
phase shifting
trim
Prior art date
Application number
PCT/US2002/018480
Other languages
French (fr)
Other versions
WO2002101466A2 (en
Inventor
Christophe Pierrat
Michel Luc Cote
Original Assignee
Numerical Tech Inc
Christophe Pierrat
Michel Luc Cote
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Numerical Tech Inc, Christophe Pierrat, Michel Luc Cote filed Critical Numerical Tech Inc
Priority to EP02778961A priority Critical patent/EP1393132B1/en
Priority to AU2002349203A priority patent/AU2002349203A1/en
Priority to AT02778961T priority patent/ATE555420T1/en
Priority to JP2003504165A priority patent/JP2005517282A/en
Publication of WO2002101466A2 publication Critical patent/WO2002101466A2/en
Publication of WO2002101466A3 publication Critical patent/WO2002101466A3/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose

Abstract

Mask and integrated circuit fabrication approaches are described to facilitate use of so called 'full phase' masks. This facilitates use of masks where substantially all of a layout is defined using phase shifting. More specifically, exposure settings including relative dosing between the phase shift mask and the trim masks are described. Additionally, single reticle approaches for accommodating both masks are considered. In one embodiment, the phase shifting mask and the trim mask are exposed using the same exposure conditions, except for relative dosing. In another embodiment, the relative dosing between the phase and trim patterns is 1.0:r, 2.0< r <4.0. These approaches facilitate better exposure profiles for the resulting ICs and can thus improve chip yield and increase throughput by reducing the need to alter settings and/or switch reticles between exposures.
PCT/US2002/018480 2001-06-08 2002-06-07 Exposure control for phase shifting photolithographic masks WO2002101466A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP02778961A EP1393132B1 (en) 2001-06-08 2002-06-07 Exposure control for phase shifting photolithographic masks
AU2002349203A AU2002349203A1 (en) 2001-06-08 2002-06-07 Exposure control for phase shifting photolithographic masks
AT02778961T ATE555420T1 (en) 2001-06-08 2002-06-07 EXPOSURE CONTROL FOR PHASE SHIFTER MASKS
JP2003504165A JP2005517282A (en) 2001-06-08 2002-06-07 Exposure control of phase shift photolithographic mask

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US29678801P 2001-06-08 2001-06-08
US60/296,788 2001-06-08
US30414201P 2001-07-10 2001-07-10
US60/304,142 2001-07-10
US09/972,428 US6852471B2 (en) 2001-06-08 2001-10-05 Exposure control for phase shifting photolithographic masks
US09/972,428 2001-10-05

Publications (2)

Publication Number Publication Date
WO2002101466A2 WO2002101466A2 (en) 2002-12-19
WO2002101466A3 true WO2002101466A3 (en) 2003-10-09

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/018480 WO2002101466A2 (en) 2001-06-08 2002-06-07 Exposure control for phase shifting photolithographic masks

Country Status (7)

Country Link
US (4) US6852471B2 (en)
EP (1) EP1393132B1 (en)
JP (1) JP2005517282A (en)
CN (1) CN1282032C (en)
AT (1) ATE555420T1 (en)
AU (1) AU2002349203A1 (en)
WO (1) WO2002101466A2 (en)

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Also Published As

Publication number Publication date
WO2002101466A2 (en) 2002-12-19
US20100040965A1 (en) 2010-02-18
CN1282032C (en) 2006-10-25
ATE555420T1 (en) 2012-05-15
CN1514953A (en) 2004-07-21
EP1393132B1 (en) 2012-04-25
US7422841B2 (en) 2008-09-09
EP1393132A2 (en) 2004-03-03
US20040209193A1 (en) 2004-10-21
US7629109B2 (en) 2009-12-08
US20020187636A1 (en) 2002-12-12
AU2002349203A1 (en) 2002-12-23
US20080187869A1 (en) 2008-08-07
US6852471B2 (en) 2005-02-08
JP2005517282A (en) 2005-06-09

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