WO2002101466A2 - Exposure control for phase shifting photolithographic masks - Google Patents
Exposure control for phase shifting photolithographic masks Download PDFInfo
- Publication number
- WO2002101466A2 WO2002101466A2 PCT/US2002/018480 US0218480W WO02101466A2 WO 2002101466 A2 WO2002101466 A2 WO 2002101466A2 US 0218480 W US0218480 W US 0218480W WO 02101466 A2 WO02101466 A2 WO 02101466A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- pattern
- mask
- layer
- phase shift
- phase
- Prior art date
Links
- 230000010363 phase shift Effects 0.000 claims abstract description 72
- 238000004519 manufacturing process Methods 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims description 50
- 230000003287 optical effect Effects 0.000 claims description 42
- 230000005855 radiation Effects 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 31
- 238000005286 illumination Methods 0.000 claims description 25
- 238000013461 design Methods 0.000 claims description 15
- 238000000206 photolithography Methods 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 10
- 238000012360 testing method Methods 0.000 claims description 7
- 238000013459 approach Methods 0.000 abstract description 11
- 235000012431 wafers Nutrition 0.000 description 44
- 230000000873 masking effect Effects 0.000 description 7
- 238000004088 simulation Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 230000001427 coherent effect Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010420 art technique Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT02778961T ATE555420T1 (en) | 2001-06-08 | 2002-06-07 | EXPOSURE CONTROL FOR PHASE SHIFTER MASKS |
JP2003504165A JP2005517282A (en) | 2001-06-08 | 2002-06-07 | Exposure control of phase shift photolithographic mask |
AU2002349203A AU2002349203A1 (en) | 2001-06-08 | 2002-06-07 | Exposure control for phase shifting photolithographic masks |
EP02778961A EP1393132B1 (en) | 2001-06-08 | 2002-06-07 | Exposure control for phase shifting photolithographic masks |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US29678801P | 2001-06-08 | 2001-06-08 | |
US60/296,788 | 2001-06-08 | ||
US30414201P | 2001-07-10 | 2001-07-10 | |
US60/304,142 | 2001-07-10 | ||
US09/972,428 | 2001-10-05 | ||
US09/972,428 US6852471B2 (en) | 2001-06-08 | 2001-10-05 | Exposure control for phase shifting photolithographic masks |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002101466A2 true WO2002101466A2 (en) | 2002-12-19 |
WO2002101466A3 WO2002101466A3 (en) | 2003-10-09 |
Family
ID=27404462
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2002/018480 WO2002101466A2 (en) | 2001-06-08 | 2002-06-07 | Exposure control for phase shifting photolithographic masks |
Country Status (7)
Country | Link |
---|---|
US (4) | US6852471B2 (en) |
EP (1) | EP1393132B1 (en) |
JP (1) | JP2005517282A (en) |
CN (1) | CN1282032C (en) |
AT (1) | ATE555420T1 (en) |
AU (1) | AU2002349203A1 (en) |
WO (1) | WO2002101466A2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100380231C (en) * | 2003-08-28 | 2008-04-09 | 力晶半导体股份有限公司 | Optical etching method |
Families Citing this family (19)
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US6852471B2 (en) * | 2001-06-08 | 2005-02-08 | Numerical Technologies, Inc. | Exposure control for phase shifting photolithographic masks |
US6777143B2 (en) * | 2002-01-28 | 2004-08-17 | Taiwan Semiconductor Manufacturing Company | Multiple mask step and scan aligner |
US7581203B2 (en) * | 2003-06-30 | 2009-08-25 | Agere Systems Inc. | Method and apparatus for manufacturing multiple circuit patterns using a multiple project mask |
US20050054210A1 (en) * | 2003-09-04 | 2005-03-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multiple exposure method for forming patterned photoresist layer |
US7232630B2 (en) * | 2003-12-11 | 2007-06-19 | Synopsys, Inc | Method for printability enhancement of complementary masks |
US7448012B1 (en) | 2004-04-21 | 2008-11-04 | Qi-De Qian | Methods and system for improving integrated circuit layout |
US20080085471A1 (en) * | 2006-10-10 | 2008-04-10 | Anderson Brent A | Photolithographic method using multiple photoexposure apparatus |
US8431328B2 (en) * | 2007-02-22 | 2013-04-30 | Nikon Corporation | Exposure method, method for manufacturing flat panel display substrate, and exposure apparatus |
US8071278B1 (en) * | 2007-04-16 | 2011-12-06 | Cadence Design Systems, Inc. | Multiple patterning technique using a single reticle |
US20080299499A1 (en) * | 2007-05-30 | 2008-12-04 | Naomasa Shiraishi | Exposure method, method of manufacturing plate for flat panel display, and exposure apparatus |
US7951722B2 (en) | 2007-08-08 | 2011-05-31 | Xilinx, Inc. | Double exposure semiconductor process for improved process margin |
US7906253B2 (en) * | 2007-09-28 | 2011-03-15 | Texas Instruments Incorporated | System and method for making photomasks |
CN101576708B (en) * | 2008-06-13 | 2011-03-23 | 上海丽恒光微电子科技有限公司 | Method of photolithographic patterning |
US9005848B2 (en) * | 2008-06-17 | 2015-04-14 | Photronics, Inc. | Photomask having a reduced field size and method of using the same |
US8479125B2 (en) * | 2009-03-31 | 2013-07-02 | Christophe Pierrat | Lithography modeling and applications |
US9005849B2 (en) * | 2009-06-17 | 2015-04-14 | Photronics, Inc. | Photomask having a reduced field size and method of using the same |
US20150221196A1 (en) * | 2012-06-12 | 2015-08-06 | C. Rafin & Co Pty Ltd | Method and Apparatus for Facilitating the Management of Health and Security |
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CN108319115B (en) * | 2018-02-28 | 2020-08-21 | 南昌航空大学 | Binary digital mask photoetching method based on virtual layer dynamic modulation |
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-
2001
- 2001-10-05 US US09/972,428 patent/US6852471B2/en not_active Expired - Lifetime
-
2002
- 2002-06-07 JP JP2003504165A patent/JP2005517282A/en active Pending
- 2002-06-07 AU AU2002349203A patent/AU2002349203A1/en not_active Abandoned
- 2002-06-07 WO PCT/US2002/018480 patent/WO2002101466A2/en active Search and Examination
- 2002-06-07 CN CNB028115449A patent/CN1282032C/en not_active Expired - Fee Related
- 2002-06-07 AT AT02778961T patent/ATE555420T1/en active
- 2002-06-07 EP EP02778961A patent/EP1393132B1/en not_active Expired - Lifetime
-
2004
- 2004-05-07 US US10/841,276 patent/US7422841B2/en not_active Expired - Lifetime
-
2008
- 2008-04-07 US US12/080,886 patent/US7629109B2/en not_active Expired - Lifetime
-
2009
- 2009-10-16 US US12/589,033 patent/US20100040965A1/en not_active Abandoned
Non-Patent Citations (1)
Title |
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KIKUCHI ET AL.: "Method of expanding process window for the double exposure technique with alt-PSMs", OPTICAL MICROLITHOGRAPHY XIII, PROC. OF SSPIE, vol. 4000, 2000, pages 121 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100380231C (en) * | 2003-08-28 | 2008-04-09 | 力晶半导体股份有限公司 | Optical etching method |
Also Published As
Publication number | Publication date |
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US20020187636A1 (en) | 2002-12-12 |
US20100040965A1 (en) | 2010-02-18 |
CN1514953A (en) | 2004-07-21 |
EP1393132A2 (en) | 2004-03-03 |
CN1282032C (en) | 2006-10-25 |
ATE555420T1 (en) | 2012-05-15 |
WO2002101466A3 (en) | 2003-10-09 |
US6852471B2 (en) | 2005-02-08 |
US7422841B2 (en) | 2008-09-09 |
EP1393132B1 (en) | 2012-04-25 |
US20080187869A1 (en) | 2008-08-07 |
AU2002349203A1 (en) | 2002-12-23 |
US20040209193A1 (en) | 2004-10-21 |
US7629109B2 (en) | 2009-12-08 |
JP2005517282A (en) | 2005-06-09 |
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