WO2002101466A2 - Exposure control for phase shifting photolithographic masks - Google Patents
Exposure control for phase shifting photolithographic masks Download PDFInfo
- Publication number
- WO2002101466A2 WO2002101466A2 PCT/US2002/018480 US0218480W WO02101466A2 WO 2002101466 A2 WO2002101466 A2 WO 2002101466A2 US 0218480 W US0218480 W US 0218480W WO 02101466 A2 WO02101466 A2 WO 02101466A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- pattern
- mask
- layer
- phase shift
- phase
- Prior art date
Links
- 230000010363 phase shift Effects 0.000 claims abstract description 72
- 238000004519 manufacturing process Methods 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims description 50
- 230000003287 optical effect Effects 0.000 claims description 42
- 230000005855 radiation Effects 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 31
- 238000005286 illumination Methods 0.000 claims description 25
- 238000013461 design Methods 0.000 claims description 15
- 238000000206 photolithography Methods 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 10
- 238000012360 testing method Methods 0.000 claims description 7
- 238000013459 approach Methods 0.000 abstract description 11
- 235000012431 wafers Nutrition 0.000 description 44
- 230000000873 masking effect Effects 0.000 description 7
- 238000004088 simulation Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 230000001427 coherent effect Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010420 art technique Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
Definitions
- the relative dosing between the exposure of the phase shifting pattern and the trim pattern is expressed by a ratio 1.0:r, where r > 0.0. In some embodiments, 2.0 ⁇ r ⁇ 4.0, so that the exposure dosing of the binary pattern is from 2 to 4 times greater than the dosing of the phase shifting pattern.
- One embodiment uses a 1 :2 ratio, another a 1 :3 ratio. The greater exposure of the trim pattern facilitates clearing of cuts, or openings, while preventing exposure of the features defined by the phase shifting pattern.
- r is determined from simulation results for a particular optical lithography model, e.g. stepper, wavelength, resist measurements, etc.
- a method for manufacturing an integrated circuit includes forming a layer of resist on a semiconductor wafer, moving the wafer to a stepper system including a radiation source and a reticle having a phase shifting pattern and a trim pattern; positioning the wafer and the reticle for exposure of a phase shifting pattern in the reticle; applying a dose of radiation to the wafer through the phase shifting pattern using stepper settings including a set of optical parameters including numerical aperture (N.A.), wavelength ( ⁇ ) of light, coherency (such as measured by partial coherence ⁇ ), illumination configuration (single spot source, dipole source, quadrapole source, annular source), axis of illumination, and defocus; positioning the wafer and the reticle for exposure of a trim pattern in the reticle; applying a dose of radiation to the wafer through the trim pattern using stepper settings including said set of parameters for the trim exposure, wherein all or some of the members of said set of parameters are substantially the same as those used for the phase shifting
- Fig. 1 illustrates a pattern of features and phase shift regions for defining those features.
- Fig. 3 illustrates a simulated exposure of the layout of Fig. 1 according to a
- Fig. 5 illustrates a portion of a wafer after a first exposure by the reticle of Fig. 4.
- Fig. 7 illustrates a portion of a wafer after a first exposure by the reticle of
- Fig. 9 illustrates a single reticle having phase shifting pattern and two trim patterns.
- Fig. 10 illustrates a portion of a wafer after a first exposure by the reticle of Fig. 9.
- the relevant layout comprises a layout where phase shifting is used to define at least one of:
- Fig. 1 a pattern of features and phase shift regions for defining those features is shown.
- the phase shifting design shown in Fig. 1 was manually defined.
- the pattern includes the feature 100 and the feature 102. Of interest is the proximity of the end cap of the feature 100 with the top edge of the feature 102.
- the phase shift regions have been defined with the shifter 104, the shifter 106, the shifter 108, and the shifter 110.
- the shifter 106 and the shifter 110 share a single phase, e.g. 0, as do the shifter 104 and the shifter 108, e.g. ⁇ .
- the outputs include black contour lines (contour line 202, contour line 204, contour line 302, and contour line 304) that indicate where the feature 100 and the feature 102 will print.
- black contour lines contour line 202, contour line 204, contour line 302, and contour line 304.
- Fig. 4 illustrates a single reticle having both a phase shiftmg and trim patterns.
- the reticle 400 includes a phase shifting pattern 402 and a trim pattern 404.
- the phase shifting pattern 402 shows a pattern "1" and the trim pattern 404 a pattern "2" for convenience of explanation of the wafer exposures described below.
- dosing can be at a user selected ratio, e.g. 1.0:r, between patterns through the use of blading.
- blading or covering, one region of the reticle 400, an exposure of the type shown in Fig. 7 on a wafer 700 will result after all of the fields on the wafer are exposed.
- a second exposure after repositioning the reticle and/or wafer in the stepper is shown in Fig. 8 where the exposure with the phase shifting pattern 402 is complete.
- the blades could then be adjusted to cover the other patterns of the reticle and allow exposures to be made with the trim pattern 404 exposing the wafer.
- Fig. 9 illustrates a single reticle having phase shifting pattern and two trim patterns.
- phase shifting can be used to define other layers of material.
- Some embodiments of the invention include computer programs for simulating stepper exposures using phase shift and trim patterns to compute appropriate relative dosing between phase and trim/binary exposures.
- the ICWorkbench(TM) software produced by Numerical Technologies, Inc., San Jose, California is used to simulate the exposure conditions, e.g. as seen in Figs. 2-3.
- computer programs are used to develop a pattern of layouts on a single reticle and a corresponding exposure pattern for exposure of wafers by the reticle.
- optical lithography refers processes that include the use of visible, ultraviolet, deep ultraviolet, extreme ultraviolet, x-ray, and other radiation sources for lithography purposes.
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT02778961T ATE555420T1 (en) | 2001-06-08 | 2002-06-07 | EXPOSURE CONTROL FOR PHASE SHIFTER MASKS |
JP2003504165A JP2005517282A (en) | 2001-06-08 | 2002-06-07 | Exposure control of phase shift photolithographic mask |
AU2002349203A AU2002349203A1 (en) | 2001-06-08 | 2002-06-07 | Exposure control for phase shifting photolithographic masks |
EP02778961A EP1393132B1 (en) | 2001-06-08 | 2002-06-07 | Exposure control for phase shifting photolithographic masks |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US29678801P | 2001-06-08 | 2001-06-08 | |
US60/296,788 | 2001-06-08 | ||
US30414201P | 2001-07-10 | 2001-07-10 | |
US60/304,142 | 2001-07-10 | ||
US09/972,428 | 2001-10-05 | ||
US09/972,428 US6852471B2 (en) | 2001-06-08 | 2001-10-05 | Exposure control for phase shifting photolithographic masks |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002101466A2 true WO2002101466A2 (en) | 2002-12-19 |
WO2002101466A3 WO2002101466A3 (en) | 2003-10-09 |
Family
ID=27404462
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2002/018480 WO2002101466A2 (en) | 2001-06-08 | 2002-06-07 | Exposure control for phase shifting photolithographic masks |
Country Status (7)
Country | Link |
---|---|
US (4) | US6852471B2 (en) |
EP (1) | EP1393132B1 (en) |
JP (1) | JP2005517282A (en) |
CN (1) | CN1282032C (en) |
AT (1) | ATE555420T1 (en) |
AU (1) | AU2002349203A1 (en) |
WO (1) | WO2002101466A2 (en) |
Cited By (1)
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CN100380231C (en) * | 2003-08-28 | 2008-04-09 | 力晶半导体股份有限公司 | Optical etching method |
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CN100380231C (en) * | 2003-08-28 | 2008-04-09 | 力晶半导体股份有限公司 | Optical etching method |
Also Published As
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US20020187636A1 (en) | 2002-12-12 |
US20100040965A1 (en) | 2010-02-18 |
CN1514953A (en) | 2004-07-21 |
EP1393132A2 (en) | 2004-03-03 |
CN1282032C (en) | 2006-10-25 |
ATE555420T1 (en) | 2012-05-15 |
WO2002101466A3 (en) | 2003-10-09 |
US6852471B2 (en) | 2005-02-08 |
US7422841B2 (en) | 2008-09-09 |
EP1393132B1 (en) | 2012-04-25 |
US20080187869A1 (en) | 2008-08-07 |
AU2002349203A1 (en) | 2002-12-23 |
US20040209193A1 (en) | 2004-10-21 |
US7629109B2 (en) | 2009-12-08 |
JP2005517282A (en) | 2005-06-09 |
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