WO2002099161A3 - Method for the deposition of materials from mesomorphous films - Google Patents

Method for the deposition of materials from mesomorphous films Download PDF

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Publication number
WO2002099161A3
WO2002099161A3 PCT/CA2002/000832 CA0200832W WO02099161A3 WO 2002099161 A3 WO2002099161 A3 WO 2002099161A3 CA 0200832 W CA0200832 W CA 0200832W WO 02099161 A3 WO02099161 A3 WO 02099161A3
Authority
WO
WIPO (PCT)
Prior art keywords
film
metal
films
light
materials
Prior art date
Application number
PCT/CA2002/000832
Other languages
French (fr)
Other versions
WO2002099161A2 (en
Inventor
Juan P Bravo Vasquez
Ross H Hill
Original Assignee
Univ Fraser Simon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Fraser Simon filed Critical Univ Fraser Simon
Priority to KR10-2003-7016026A priority Critical patent/KR20040089457A/en
Priority to EP02740163A priority patent/EP1432845A2/en
Priority to AU2002315597A priority patent/AU2002315597A1/en
Priority to JP2003502265A priority patent/JP2004536962A/en
Publication of WO2002099161A2 publication Critical patent/WO2002099161A2/en
Publication of WO2002099161A3 publication Critical patent/WO2002099161A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/06—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/08—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1216—Metal oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam

Abstract

A photoresist-free method for making patterned films of metal oxides, metals, or other metal containing compounds is described. The method involves applying a thin film coating of a metal complex, resulting in the formation of a liquid crystal film. This film can be photolyzed resulting in a chemical reaction which deposits a metal or metal oxide film. The metal complex used is photoreactive and undergoes a chemical reaction in the presence of light of a suitable wavelength. The end product of the reactions depends upon the atmosphere in which the reactions take place. Metal oxide films may be made in air. Patterned films may be made by exposing only selected portions of the film to light. Patterns of two or more materials may be laid down from the same film by exposing different parts of the film to light in different atmospheres.
PCT/CA2002/000832 2001-06-06 2002-06-06 Method for the deposition of materials from mesomorphous films WO2002099161A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR10-2003-7016026A KR20040089457A (en) 2001-06-06 2002-06-06 Method for the deposition of materials from mesomorphous films
EP02740163A EP1432845A2 (en) 2001-06-06 2002-06-06 Method for the deposition of materials from mesomorphous films
AU2002315597A AU2002315597A1 (en) 2001-06-06 2002-06-06 Method for the deposition of materials from mesomorphous films
JP2003502265A JP2004536962A (en) 2001-06-06 2002-06-06 Method for depositing materials from mesophase films

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US87595701A 2001-06-06 2001-06-06
US09/875,957 2001-06-06
US09/876,944 2001-06-08
US09/876,944 US6777036B2 (en) 2001-06-06 2001-06-08 Method for the deposition of materials from mesomorphous films

Publications (2)

Publication Number Publication Date
WO2002099161A2 WO2002099161A2 (en) 2002-12-12
WO2002099161A3 true WO2002099161A3 (en) 2004-04-15

Family

ID=27128387

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CA2002/000832 WO2002099161A2 (en) 2001-06-06 2002-06-06 Method for the deposition of materials from mesomorphous films

Country Status (8)

Country Link
US (1) US6777036B2 (en)
EP (1) EP1432845A2 (en)
JP (1) JP2004536962A (en)
KR (1) KR20040089457A (en)
CN (1) CN1630735A (en)
AU (1) AU2002315597A1 (en)
TW (1) TW558739B (en)
WO (1) WO2002099161A2 (en)

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US20040191423A1 (en) * 2000-04-28 2004-09-30 Ruan Hai Xiong Methods for the deposition of silver and silver oxide films and patterned films
US20060001064A1 (en) * 2000-04-28 2006-01-05 Hill Ross H Methods for the lithographic deposition of ferroelectric materials
US7074640B2 (en) * 2000-06-06 2006-07-11 Simon Fraser University Method of making barrier layers
US20050276911A1 (en) * 2004-06-15 2005-12-15 Qiong Chen Printing of organometallic compounds to form conductive traces
US20060110540A1 (en) * 2004-11-24 2006-05-25 3M Innovative Properties Company Method for making nanostructured surfaces
US7582330B2 (en) * 2004-11-24 2009-09-01 3M Innovative Properties Counsel Method for making metallic nanostructures
US7687115B2 (en) * 2004-11-24 2010-03-30 3M Innovative Properties Company Method for making nanostructured surfaces
GB0504262D0 (en) * 2005-03-02 2005-04-06 Eastman Kodak Co A method of forming a patterned conductive structure
WO2006095435A1 (en) * 2005-03-10 2006-09-14 Fujitsu Limited Crosslinking ligand, metal complex and metal complex integrated structure
US7629027B2 (en) * 2005-10-14 2009-12-08 3M Innovative Properties Company Method for making chromonic nanoparticles
US7718716B2 (en) * 2005-10-14 2010-05-18 3M Innovative Properties Company Chromonic nanoparticles containing bioactive compounds
US20070128291A1 (en) * 2005-12-07 2007-06-07 Tokie Jeffrey H Method and Apparatus for Forming Chromonic Nanoparticles
US7807661B2 (en) 2005-12-08 2010-10-05 3M Innovative Properties Company Silver ion releasing articles and methods of manufacture
US8092710B2 (en) * 2005-12-19 2012-01-10 3M Innovative Properties Company Hierarchical chromonic structures
US7601769B2 (en) * 2005-12-19 2009-10-13 3M Innovative Peroperties Company Multilayered chromonic structures
US7824732B2 (en) * 2005-12-28 2010-11-02 3M Innovative Properties Company Encapsulated chromonic particles
US20070193026A1 (en) * 2006-02-23 2007-08-23 Chun Christine Dong Electron attachment assisted formation of electrical conductors
DE102007024153A1 (en) * 2007-04-23 2008-10-30 Osram Opto Semiconductors Gmbh Electric organic component and method for its production
KR100920388B1 (en) 2008-01-17 2009-10-07 연세대학교 산학협력단 Method for patterning thin-film by photoresist-free lithography
JP2010077468A (en) * 2008-09-24 2010-04-08 Jsr Corp Composition for forming ruthenium film, and method for forming ruthenium film
WO2011026315A1 (en) 2009-09-02 2011-03-10 The Hong Kong University Of Science And Technology Method of producing spatially variable pretilt angles across a liquid crystal cell
JP5818480B2 (en) * 2011-03-30 2015-11-18 東海旅客鉄道株式会社 Thin film forming composition, coating liquid, and thin film forming method
US9433928B2 (en) 2011-09-01 2016-09-06 Click Materials Corp. Electrocatalytic materials and methods for manufacturing same
EP2837932A1 (en) * 2013-08-16 2015-02-18 Sensirion AG Annealing process for integrated metal oxide gas sensors
US9840597B2 (en) * 2013-08-16 2017-12-12 Exxonmobil Chemical Patents Inc. Polyamide-polyolefin copolymers and methods of making them
US9741918B2 (en) 2013-10-07 2017-08-22 Hypres, Inc. Method for increasing the integration level of superconducting electronics circuits, and a resulting circuit
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Also Published As

Publication number Publication date
KR20040089457A (en) 2004-10-21
EP1432845A2 (en) 2004-06-30
JP2004536962A (en) 2004-12-09
AU2002315597A1 (en) 2002-12-16
WO2002099161A2 (en) 2002-12-12
TW558739B (en) 2003-10-21
US20020197415A1 (en) 2002-12-26
US6777036B2 (en) 2004-08-17
CN1630735A (en) 2005-06-22

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