WO2002097861A3 - Semiconductor device, semiconductor layer and production method thereof - Google Patents

Semiconductor device, semiconductor layer and production method thereof Download PDF

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Publication number
WO2002097861A3
WO2002097861A3 PCT/JP2002/005007 JP0205007W WO02097861A3 WO 2002097861 A3 WO2002097861 A3 WO 2002097861A3 JP 0205007 W JP0205007 W JP 0205007W WO 02097861 A3 WO02097861 A3 WO 02097861A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor device
production method
semiconductor layer
semiconductor
boron phosphide
Prior art date
Application number
PCT/JP2002/005007
Other languages
French (fr)
Other versions
WO2002097861A2 (en
Inventor
Takashi Udagawa
Original Assignee
Showa Denko Kk
Takashi Udagawa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2001158282A external-priority patent/JP4431290B2/en
Application filed by Showa Denko Kk, Takashi Udagawa filed Critical Showa Denko Kk
Priority to KR1020037001053A priority Critical patent/KR100583243B1/en
Priority to AU2002302968A priority patent/AU2002302968A1/en
Priority to US10/332,200 priority patent/US7315050B2/en
Priority to EP02730700A priority patent/EP1393352B1/en
Publication of WO2002097861A2 publication Critical patent/WO2002097861A2/en
Publication of WO2002097861A3 publication Critical patent/WO2002097861A3/en
Priority to US11/819,382 priority patent/US7622398B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
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    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
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    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
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    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
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    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

A semiconductor device is prepared by the use of a vapor phase method and is provided with a semiconductor layer composed of boron phosphide (BP) having a band gap at room temperature of not less than 2.8 eV and not more than 3.4 eV or a boron phosphide (BP)-base mixed crystal which contains the boron phosphide (BP) and which is represented by the formula: BαAlβGaηIn¿1-αβη?PδAsεN¿1-δ-ε?(0∫α=1, 0=β∫1, 0=η∫1, 0∫α+β+η=1, 0∫δ=1, 0=ε∫1, 0∫δ+ε=1).
PCT/JP2002/005007 2001-05-28 2002-05-23 Semiconductor device, semiconductor layer and production method thereof WO2002097861A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020037001053A KR100583243B1 (en) 2001-05-28 2002-05-23 Semiconductor device, semiconductor layer and production method thereof
AU2002302968A AU2002302968A1 (en) 2001-05-28 2002-05-23 Semiconductor device, semiconductor layer and production method thereof
US10/332,200 US7315050B2 (en) 2001-05-28 2002-05-23 Semiconductor device, semiconductor layer and production method thereof
EP02730700A EP1393352B1 (en) 2001-05-28 2002-05-23 Semiconductor device, semiconductor layer and production method thereof
US11/819,382 US7622398B2 (en) 2001-05-28 2007-06-27 Semiconductor device, semiconductor layer and production method thereof

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2001-158282 2001-05-28
JP2001158282A JP4431290B2 (en) 2001-05-28 2001-05-28 Semiconductor element and semiconductor layer
US30042501P 2001-06-26 2001-06-26
US60/300,425 2001-06-26

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US10332200 A-371-Of-International 2002-05-23
US11/819,382 Division US7622398B2 (en) 2001-05-28 2007-06-27 Semiconductor device, semiconductor layer and production method thereof

Publications (2)

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WO2002097861A2 WO2002097861A2 (en) 2002-12-05
WO2002097861A3 true WO2002097861A3 (en) 2003-07-24

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Country Status (6)

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US (2) US7315050B2 (en)
EP (1) EP1393352B1 (en)
KR (1) KR100583243B1 (en)
CN (1) CN1214467C (en)
AU (1) AU2002302968A1 (en)
WO (1) WO2002097861A2 (en)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6730987B2 (en) * 2001-09-10 2004-05-04 Showa Denko K.K. Compound semiconductor device, production method thereof, light-emitting device and transistor
EP1470592B1 (en) * 2002-01-28 2010-09-22 Showa Denko K.K. Boron phosphide based semiconductor device
US6730941B2 (en) 2002-01-30 2004-05-04 Showa Denko Kabushiki Kaisha Boron phosphide-based semiconductor light-emitting device, production method thereof, and light-emitting diode
TWI273724B (en) * 2002-11-18 2007-02-11 Showa Denko Kk Boron phosphide-based semiconductor light-emitting device, production method thereof and light-emitting diode
AU2003288550A1 (en) * 2002-12-02 2004-06-23 Showa Denko K.K. Boron phosphide-based compound semiconductor device, production method thereof and light-emitting diode
JP4134715B2 (en) * 2002-12-19 2008-08-20 住友電気工業株式会社 Bipolar transistor
AU2003295236A1 (en) * 2003-01-06 2004-07-29 Showa Denko K. K. Boron phosphide-based semiconductor light-emitting device and production method thereof
WO2005043635A1 (en) * 2003-10-31 2005-05-12 Showa Denko K.K. Compound semiconductor light-emitting device having pn-junction type hetero structure and forming method thereof
DE602004031971D1 (en) * 2003-11-18 2011-05-05 Nat Inst For Materials Science A CRYSTAL OF HIGHLY CLEANED HEXAGONAL BORONITRIDE USED FOR LIGHT EMISSION IN THE DEEP ULTRAVIOLET WITH HIGH LIGHT DENSITY, METHOD OF MANUFACTURING THEREOF, LIGHT IN DEEP ULTRAVIOLET WITH HIGH LIGHT-DENSITY EMITTING DEVICE AND TRANSMITTED UNIT
CN100413105C (en) * 2004-03-05 2008-08-20 昭和电工株式会社 Boron phosphide-based semiconductor light-emitting device
CN1934717B (en) * 2004-03-15 2011-08-03 昭和电工株式会社 Compound semiconductor light-emitting diode
KR100801372B1 (en) 2004-03-30 2008-02-05 쇼와 덴코 가부시키가이샤 Compound semiconductor device, production mehtod of compound semiconductor device and diode
TWI296160B (en) * 2004-05-06 2008-04-21 Showa Denko Kk Pn junction-type compound semiconductor light emitting diode
CN100433372C (en) * 2005-04-15 2008-11-12 香港理工大学 Ultraviolet detecting apparatus
WO2007032802A2 (en) * 2005-06-29 2007-03-22 University Of Houston Nanorod arrays formed by ion beam implantation
US20100193685A1 (en) * 2005-06-29 2010-08-05 University Of Houston Miniature Neutron Generator for Active Nuclear Materials Detection
CN101971364B (en) * 2008-11-06 2013-05-15 松下电器产业株式会社 Nitride semiconductor element and method for manufacturing the same
JP5234022B2 (en) * 2009-07-15 2013-07-10 住友電気工業株式会社 Nitride semiconductor light emitting device
US20110163298A1 (en) * 2010-01-04 2011-07-07 Chien-Min Sung Graphene and Hexagonal Boron Nitride Devices
DE102011002236A1 (en) * 2011-04-21 2012-10-25 Dritte Patentportfolio Beteiligungsgesellschaft Mbh & Co.Kg Process for producing a polycrystalline layer
GB201210151D0 (en) * 2012-06-08 2012-07-25 Wfs Technologies Ltd Antenna system
US9376332B2 (en) * 2013-03-15 2016-06-28 Nitto Denko Corporation Multivalence photocatalytic semiconductor elements
JP6197344B2 (en) * 2013-04-18 2017-09-20 住友電気工業株式会社 Semiconductor device
CN113526476A (en) * 2020-04-15 2021-10-22 四川大学 High-pressure high-temperature method for preparing high-temperature semiconductor material Boron Phosphide (BP)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0377940A2 (en) * 1989-01-13 1990-07-18 Kabushiki Kaisha Toshiba Compound semiconductor material and semiconductor element using the same and method of manufacturing the semiconductor element
JPH0334551A (en) * 1989-06-30 1991-02-14 Toshiba Corp Field-effect transistor
JPH0334549A (en) * 1989-06-30 1991-02-14 Toshiba Corp Bipolar transistor
JPH04209584A (en) * 1990-12-07 1992-07-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor element
EP0562549A2 (en) * 1992-03-24 1993-09-29 Sumitomo Electric Industries, Ltd. Heterojunction bipolar transistor containing silicon carbide

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54127292A (en) 1978-03-27 1979-10-03 Asahi Chemical Ind Magnetic sensitive element and method of fabricating same
US4296424A (en) 1978-03-27 1981-10-20 Asahi Kasei Kogyo Kabushiki Kaisha Compound semiconductor device having a semiconductor-converted conductive region
JPH10247760A (en) 1989-01-13 1998-09-14 Toshiba Corp Semiconductor blue light emitting device
JPH10247761A (en) 1989-01-13 1998-09-14 Toshiba Corp Semiconductor blue light emitting device
JP2809690B2 (en) 1989-01-13 1998-10-15 株式会社東芝 Compound semiconductor material, semiconductor device using the same, and method of manufacturing the same
JP2809692B2 (en) 1989-04-28 1998-10-15 株式会社東芝 Semiconductor light emitting device and method of manufacturing the same
JP2809691B2 (en) 1989-04-28 1998-10-15 株式会社東芝 Semiconductor laser
JP2976352B2 (en) * 1991-01-10 1999-11-10 富士通株式会社 Visible light semiconductor laser
JP3339508B2 (en) 1992-03-24 2002-10-28 住友電気工業株式会社 Semiconductor device
JPH05275440A (en) 1992-03-24 1993-10-22 Sumitomo Electric Ind Ltd Semiconductor device and its manufacture
JPH05291277A (en) 1992-04-08 1993-11-05 Sumitomo Electric Ind Ltd Semiconductor device and manufacture thereof
JPH05291278A (en) 1992-04-08 1993-11-05 Sumitomo Electric Ind Ltd Semiconductor device and manufacture thereof
US6069021A (en) 1997-05-14 2000-05-30 Showa Denko K.K. Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer
JP3767660B2 (en) 1998-03-17 2006-04-19 昭和電工株式会社 Multilayer structure and compound semiconductor device using the same
JP3293583B2 (en) 1999-02-16 2002-06-17 昭和電工株式会社 Method of growing group III nitride semiconductor crystal layer and semiconductor device having group III nitride semiconductor crystal layer
US6194744B1 (en) * 1998-03-17 2001-02-27 Showa Denko Kabushiki Kaisha Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer
JP3496521B2 (en) 1998-06-15 2004-02-16 昭和電工株式会社 Group III nitride semiconductor device
JP4238385B2 (en) 1998-08-06 2009-03-18 昭和電工株式会社 Compound semiconductor device and manufacturing method thereof
US6734515B1 (en) 1998-09-18 2004-05-11 Mitsubishi Cable Industries, Ltd. Semiconductor light receiving element
JP2000101129A (en) 1998-09-18 2000-04-07 Mitsubishi Cable Ind Ltd Light detection method and gan semiconductor light reception element
JP3373794B2 (en) 1998-09-18 2003-02-04 三菱電線工業株式会社 Semiconductor light receiving element
US6541799B2 (en) * 2001-02-20 2003-04-01 Showa Denko K.K. Group-III nitride semiconductor light-emitting diode
US6730941B2 (en) * 2002-01-30 2004-05-04 Showa Denko Kabushiki Kaisha Boron phosphide-based semiconductor light-emitting device, production method thereof, and light-emitting diode

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0377940A2 (en) * 1989-01-13 1990-07-18 Kabushiki Kaisha Toshiba Compound semiconductor material and semiconductor element using the same and method of manufacturing the semiconductor element
JPH0334551A (en) * 1989-06-30 1991-02-14 Toshiba Corp Field-effect transistor
JPH0334549A (en) * 1989-06-30 1991-02-14 Toshiba Corp Bipolar transistor
JPH04209584A (en) * 1990-12-07 1992-07-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor element
EP0562549A2 (en) * 1992-03-24 1993-09-29 Sumitomo Electric Industries, Ltd. Heterojunction bipolar transistor containing silicon carbide

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
BACHIR BOUHAFS ET AL.: "Trends in band-gap pressure coefficients in boron compounds BP, BAs and BSb", JOURNAL OF PHYSICS: CONDENSED MATTER, vol. 12, no. 26, 3 July 2000 (2000-07-03), pages 5655 - 5668, XP002956336 *
FERHAT M. ET AL.: "Electronic structure of BN, BP and Bas", PHYSICA B, vol. 252, no. 3, 31 July 1998 (1998-07-31), pages 229 - 236, XP002956335 *
ZAOUI A. ET AL.: "Full potential linearized augmented plane wave calculations of structural and electronic properties of BN, BP, Bas and BSb", JOURNAL OF PHYSICS: CONDENSED MATTER, vol. 13, no. 2, 15 January 2001 (2001-01-15), pages 253 - 262, XP002956337 *

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