WO2002091450A3 - Ordered two-phase dielectric film, and semiconductor device containing the same - Google Patents

Ordered two-phase dielectric film, and semiconductor device containing the same Download PDF

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Publication number
WO2002091450A3
WO2002091450A3 PCT/US2002/013749 US0213749W WO02091450A3 WO 2002091450 A3 WO2002091450 A3 WO 2002091450A3 US 0213749 W US0213749 W US 0213749W WO 02091450 A3 WO02091450 A3 WO 02091450A3
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WO
WIPO (PCT)
Prior art keywords
phase
film
dielectric film
ordered
dielectric
Prior art date
Application number
PCT/US2002/013749
Other languages
French (fr)
Other versions
WO2002091450A2 (en
Inventor
Stephen Mcconnell Gates
Christopher B Murray
Satyanarayana V Nitta
Sampath Purushothaman
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Priority to IL15860902A priority Critical patent/IL158609A0/en
Priority to AT02731605T priority patent/ATE436088T1/en
Priority to KR1020037012932A priority patent/KR100655825B1/en
Priority to DE60232871T priority patent/DE60232871D1/en
Priority to JP2002588610A priority patent/JP3842220B2/en
Priority to AU2002303576A priority patent/AU2002303576A1/en
Priority to EP02731605A priority patent/EP1384256B1/en
Publication of WO2002091450A2 publication Critical patent/WO2002091450A2/en
Publication of WO2002091450A3 publication Critical patent/WO2002091450A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02107—Forming insulating materials on a substrate
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    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
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    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
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    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Abstract

A porous, low-k dielectric film that has good mechanical properties as well as a method of fabricating the film and the use of the film as a dielectric layer between metal wiring features are provided. The porous, low-k dielectric film includes a first phase of monodispersed pores having a diameter of from about 1 to about 10 nm that are substantially uniformly spaced apart and are essentially located on sites of a three-dimensional periodic lattice; and a second phase which is solid surrounding the first phase. Specifically, the second phase of the film includes (i) an ordered element that is composed of nanoparticles having a diameter of from about 1 to about 10 nm that are substantially uniformly spaced apart and are essentially arranged on sites of a three-dimensional periodic lattice, and (ii) a disordered element comprised of a dielectric material having a dielectric constant of about 2.8 or less.
PCT/US2002/013749 2001-05-03 2002-04-30 Ordered two-phase dielectric film, and semiconductor device containing the same WO2002091450A2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
IL15860902A IL158609A0 (en) 2001-05-03 2002-04-30 Ordered two-phase dielectric film and semiconductor device containing the same
AT02731605T ATE436088T1 (en) 2001-05-03 2002-04-30 TWO-PHASE DIELECTRIC LAYER AND A SEMICONDUCTOR ARRANGEMENT CONTAINING THE SAME
KR1020037012932A KR100655825B1 (en) 2001-05-03 2002-04-30 Ordered two-phase dielectric film, and semiconductor device containing the same
DE60232871T DE60232871D1 (en) 2001-05-03 2002-04-30 TWO-PHASE ARRANGED DIELECTRIC LAYER, AND A SEMICONDUCTOR ARRANGEMENT CONTAINING THIS
JP2002588610A JP3842220B2 (en) 2001-05-03 2002-04-30 Porous low dielectric constant insulating film, interconnect structure, and method for producing porous low dielectric constant insulating film
AU2002303576A AU2002303576A1 (en) 2001-05-03 2002-04-30 Ordered two-phase dielectric film, and semiconductor device containing the same
EP02731605A EP1384256B1 (en) 2001-05-03 2002-04-30 Ordered two-phase dielectric film, and semiconductor device containing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/848,153 US6780499B2 (en) 2001-05-03 2001-05-03 Ordered two-phase dielectric film, and semiconductor device containing the same
US09/848,153 2001-05-03

Publications (2)

Publication Number Publication Date
WO2002091450A2 WO2002091450A2 (en) 2002-11-14
WO2002091450A3 true WO2002091450A3 (en) 2003-11-27

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PCT/US2002/013749 WO2002091450A2 (en) 2001-05-03 2002-04-30 Ordered two-phase dielectric film, and semiconductor device containing the same

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US (1) US6780499B2 (en)
EP (1) EP1384256B1 (en)
JP (1) JP3842220B2 (en)
KR (1) KR100655825B1 (en)
CN (1) CN100356521C (en)
AT (1) ATE436088T1 (en)
AU (1) AU2002303576A1 (en)
DE (1) DE60232871D1 (en)
IL (1) IL158609A0 (en)
MY (1) MY126213A (en)
TW (1) TW538538B (en)
WO (1) WO2002091450A2 (en)

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US6303523B2 (en) 1998-02-11 2001-10-16 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US6593247B1 (en) * 1998-02-11 2003-07-15 Applied Materials, Inc. Method of depositing low k films using an oxidizing plasma
US6054379A (en) 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
US6660656B2 (en) 1998-02-11 2003-12-09 Applied Materials Inc. Plasma processes for depositing low dielectric constant films
US6784521B2 (en) * 2001-05-22 2004-08-31 Scientific Components Directional coupler
FR2827854B1 (en) * 2001-07-25 2003-09-19 Saint Gobain Rech SUBSTRATE COATED WITH A COMPOSITE FILM, MANUFACTURING METHOD AND APPLICATIONS
EP1436844B1 (en) 2001-09-05 2016-03-23 Rensselaer Polytechnic Institute Passivated nanoparticles, method of fabrication thereof, and devices incorporating nanoparticles
US6831003B1 (en) 2002-05-31 2004-12-14 Advanced Micro Devices, Inc. Continuous barrier for interconnect structure formed in porous dielectric material with minimized electromigration
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