WO2002086972A1 - Illuminator - Google Patents
Illuminator Download PDFInfo
- Publication number
- WO2002086972A1 WO2002086972A1 PCT/IE2002/000053 IE0200053W WO02086972A1 WO 2002086972 A1 WO2002086972 A1 WO 2002086972A1 IE 0200053 W IE0200053 W IE 0200053W WO 02086972 A1 WO02086972 A1 WO 02086972A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- illuminator
- substrate
- pads
- oxide
- light sources
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/648—Heat extraction or cooling elements the elements comprising fluids, e.g. heat-pipes
Definitions
- the invention relates to illuminators for applications such as machine vision systems.
- Illuminators based on light emitting diodes are widely used for machine vision, sensing, alignment, medical, sorting, ambient lighting and other applications. For many applications such as line sources, backlights and ring lights, attributes of high power density and uniformity at the target are desirable.
- LEDs are grain sized die of semiconductor material which emit light when an electric current is passed through the device.
- the light emitted from an LED die is highly non-directional, being quasi- isotropic, and is spatially non-uniform in radiant intensity (defined as the radiant flux emitted per space angle, W/sr).
- the low packing density of the packaged LEDs results in low output power and hence low irradiance at the target.
- the packaged LEDs cannot be mounted on the circuit board in a sufficiently controlled manner to ensure that the optical axis of each LED is identically aligned in the desired direction.
- light distribution and uniformity is non- optimum and there is generally a divergence of up to about 20° between the mechanical axis of the illuminator and its optical axis, again producing non- optimum irradiance at the target.
- Diffusers over the top of the packaged LED arrays are required to blur out the contributions of the individual LEDs and give some level of uniformity. Such diffusers cause loss of emitted light due to internal reflection and thus reduce the overall efficiency of the illuminator.
- Design flexibility is limited due to the need to produce a new circuit board for each design.
- Thermal management is difficult due to the insulating properties of the circuit board and the LED die encapsulation. Excessive heat reduces efficiency and LED lifetime.
- a further approach uses chip and wire technology, in which the individual die are bonded directly onto a circuit board in arrays.
- One such approach is that described in European Patent Specification No. 0560605.
- the whole board with die is encapsulated in epoxy for protection of the die and bonds.
- This provides improved packing density, but such density is limited by the critical dimensions available from printed circuit board (PCB) technology.
- PCB printed circuit board
- This limit on packing density is particularly acute where a multiple wavelength illuminator is required.
- Such an illuminator requires a multiplicity of metal interconnect tracks for electrical biasing and driving of the different LEDs needed, one type for each wavelength.
- the pattern size limitations of PCB technology mean that the LEDs have to be more widely spaced apart in multiple wavelength illuminators thus reducing packing density and increasing size and bulk.
- Another problem is that there appears to be significant internal absorption within the illuminator.
- a further problem is heat build-up due to the thermal insulating properties of the epoxy.
- the invention is therefore directed towards providing an illuminator and method of production to achieve improved power density and uniformity at a target.
- Another object is to achieve improved robustness and reliability in an illuminator.
- an illuminator comprising light sources mounted on a substrate and an integrally moulded lens covering the light sources, characterised in that,
- the substrate comprises a layer of semiconductor material and pads of conductive and reflective material overlying the semiconductor material
- said pads are electrically connected to the light sources to provide power
- the substrate is mounted directly on a heat sink.
- the moulded lens material extends completely over the substrate and a top portion of the heat sink to hermetically seal the substrate and the light sources.
- the substrate comprises a layer of electrically-insulating material over the semiconductor material and the pads overlie said electrically- insulating layer.
- said electrically-insulating material comprises an oxide of the semiconductor material.
- the oxide is thermally grown and has a dielectric strength in excess of 5 x 10 6 N/cm.
- the oxide comprises Si0 2 .
- the oxide depth is at least 2 microns.
- the pads comprises reflective silver or gold.
- the pads comprise a top sub-layer of a reflective metal over at least one adhesion sub-layer.
- said adhesion sub-layer comprises Ti.
- said adhesion sub-layer comprises ⁇ i.
- said sub-layers are deposited by evaporation over the oxide of the semiconductor material. In one embodiment, said sub-layers each have a depth in the range of 50 nm to 3 microns.
- said light sources comprise semiconductor die placed and wire bonded on said tracks.
- the invention provides a method of producing an illuminator of the type comprising light sources mounted on a substrate and an integrally moulded lens covering the light sources, the method comprising the steps of:
- the invention comprises the further step of growing an oxide layer on a surface of the base, and depositing the pads on the oxide layer.
- the oxide layer is grown to a depth of at least 2 microns.
- the base is of silicon material and the oxide is silicon dioxide.
- the pads are deposited by patterning with use of a photo-resist.
- the lens is moulded by placing the substrate upside-down in a mould cavity and filling the cavity until liquid lens material surrounds the substrate.
- the mould is sloped during filling, and the cavity is filled from the higher end.
- Fig. 1 is a perspective view of an illuminator of the invention
- Fig. 2 is a larger scale plan view of part of the substrate of the illuminator
- Fig. 3 is a flow diagram illustrating production of the substrate.
- Fig. 4 is a plan view of a ring illuminator of the invention.
- the illuminator 1 has a linear configuration for emission of a uniform line of light on a target with a high power density.
- the illuminator 1 may be used alone or a number of them may be mounted together in a desired configuration according to the application.
- the illuminator 1 comprises a planar substrate 2 mounted on a brass heat sink 3 of rectangular block shape.
- the substrate 2 supports a line of light emitting semiconductor die 4 and bond wires 5 for activation.
- a semi-elliptical body 6 of transparent epoxy is moulded over the substrate 2 and it overlaps the sides of the substrate 2 and the top of the heat sink's sides to form an hermetic seal.
- the overlapping portion is indicated by the numeral 7.
- the substrate 2 comprises a series of central tri-metal pads 10(a), 10(b), 10(c), and 10(d). There are also a series of lateral wire bond tri-metal pads 11(a), 11(b), and 11(c) on one side and a series 12(a), 12(b), and 12(c) on the other side.
- the die 4 are mounted in a straight line on the central pads 10 with a packing density of 4 per mm.
- the die 4 are of the AlGaAs type emitting at 660nm wavelength.
- the wire bonds 5 bridge the dies 4 and the lateral pads 11 and 12.
- a silicon (Si) strip 20 of dimensions 50mm long by 5mm wide is provided.
- the Si acts as an excellent thermal conductor.
- SiO 2 oxide 21 is then grown on both faces of the Si strip 20.
- the depth of the oxide 21 is 2 microns, and it is grown by thermal oxidation
- the top oxide layer is used for supporting the pads and it is an excellent electrical insulator for insulation of the pads 10, 11, and 12 and the wire bonds.
- the dielectric strength is in the range of 5 to 10 x 10 6 N/cm.
- high voltages in the range of 10V to 220V may be applied to the illuminator without oxide breakdown.
- a tri-metal layer 25 is grown over the top oxide layer 21.
- the metal sub-layers are grown by evaporation as follows:- Ti to a depth of 50nm,
- the Ni and Ti are very effective primers for adhesion of the Ag layer, thus providing excellent stability.
- the top sub-layer of silver (Ag) material is important because it plays both optical and electrical roles in operation of the illuminator 1. It is highly reflective so that a large proportion of light emitted by the dies 4 in the general plane of the substrate 2 is reflected upwardly and out of the epoxy body 6. Thus, the pads 10, 11, and 12 serve a dual purpose of conducting electrical power to the dies 4 (via the wire bonds 5) and of reflecting light upwardly to improve optical efficiency.
- the next step is to pattern photoresist 26 over the layer 25 to define two exposed lines 0.7mm wide on the tri-metal layer 25.
- the tri-metal layer 25 is then etched away by a chemical wet etch process to define the three electrically isolated pads 10, 11, and 12.
- the dies 4 are then placed on the central track 10 using silver epoxy, and they are wire-bonded to the lateral tracks 11 and 12.
- Fig. 3 provides the loaded substrate 2. This is then adhered to the heat sink 3 using a highly thermal conductive epoxy.
- Electrical leads 9 are soldered to the substrate 2 at the end pads.
- a PTFE mould having cavities defining the shape of the illuminator 1 from the top of the heat sink 3 upwardly is used to mould the epoxy 6.
- This step is performed very quickly after deposition of the tri-metal layer to avoid oxidation on the Ag surface and thus ensure that it is highly reflective.
- the heat sink/substrate assembly is placed upside-down in the mould, and epoxy is injected underneath.
- the mould is shaped to ensure that the epoxy fills completely as it is injected the higher-level end and there is gravity flow.
- the mould is shaped to ensure that the epoxy 6 not only covers the substrate 2, but also extends downwardly over the top of the heat sink side edges to hermetically seal the whole unit.
- the mould is then baked at 80°C for one hour to cure the epoxy.
- the silicon strip 20 is 5mm wide, the pads 11 and 12 each being 1.9mm wide.
- the length is 50mm.
- the dimensions may be different to suit the required number of dies and their relative positions.
- the dies may be of a variety of types in the one illuminator to achieve the desired colour illumination. There may, for example, be R, G, and B dies, and a separate lateral pad associated with each set.
- the technique for applying and patterning the tri-metal layer 25 allows excellent versatility for achieving a desired configuration of drive.
- the epoxy 6 this is of the type marketed as E501TM by Epotecny of Levallois-Perrit, France.
- the epoxy composition and mould shape may be different to suit the particular application. For example, if a broader line of illumination is required the shape may be semi-cylindrical rather than semi-elliptical. There is excellent versatility because the desired light output spread is easily set by choice of mould shape.
- the illuminator 1 may be regarded as a building block for a composite illuminator having multiple such illuminators.
- a ring illuminator 30 comprises eight illuminators 1 mounted in an inwardly-directed ring configuration on a plastics support 31.
- the outer support may also be of a heat sink material.
- the invention provides an illuminator which is very robust because of the epoxy/ substrate/heat sink construction.
- There is also a large power density because of reflection from the Ag-surfaced tracks and the high die density.
- there is a large voltage range of operation because of the high dielectric strength of the Si0 2 oxide.
- Another advantage is that excellent uniformity is achieved because of reflection of light from the Ag-surfaced pads 10, 11, and 12. This avoids the need for diffusion components in the epoxy, thus contributing to high power density.
- the invention is not limited to the embodiments described but may be varied in construction and detail.
- the pads may be coated with Au for excellent reflectivity.
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02764089A EP1386357A1 (en) | 2001-04-23 | 2002-04-23 | Illuminator |
US10/689,641 US6995405B2 (en) | 2001-04-23 | 2003-10-22 | Illuminator |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IE20010402 | 2001-04-23 | ||
IE2001/0402 | 2001-04-23 | ||
IE2001/0827 | 2001-09-13 | ||
IE20010827 | 2001-09-13 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/689,641 Continuation US6995405B2 (en) | 2001-04-23 | 2003-10-22 | Illuminator |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002086972A1 true WO2002086972A1 (en) | 2002-10-31 |
Family
ID=26320318
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IE2002/000053 WO2002086972A1 (en) | 2001-04-23 | 2002-04-23 | Illuminator |
Country Status (4)
Country | Link |
---|---|
US (1) | US6995405B2 (en) |
EP (1) | EP1386357A1 (en) |
IE (1) | IE20020300A1 (en) |
WO (1) | WO2002086972A1 (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003098707A1 (en) * | 2002-05-22 | 2003-11-27 | Applied Optotech Limited | Led array |
WO2005062089A1 (en) * | 2003-12-02 | 2005-07-07 | 3M Innovative Properties Company | Solid state light device |
WO2005113877A1 (en) * | 2004-05-21 | 2005-12-01 | Tokai Kogyo Mishin Kabushiki Kaisha | Sewing machine |
US7163327B2 (en) | 2002-12-02 | 2007-01-16 | 3M Innovative Properties Company | Illumination system using a plurality of light sources |
US7202489B2 (en) | 2003-12-02 | 2007-04-10 | 3M Innovative Properties Company | LED modifying apparatus and method |
US7659547B2 (en) | 2002-05-22 | 2010-02-09 | Phoseon Technology, Inc. | LED array |
EP2317552A3 (en) * | 2009-10-30 | 2013-07-31 | Toshiba Lighting & Technology Corporation | Light-emitting device, method of manufacturing light-emitting device, and illumination device |
US10401012B2 (en) | 2002-05-08 | 2019-09-03 | Phoseon Technology, Inc. | High efficiency solid-state light source and methods of use and manufacture |
Families Citing this family (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1678442B8 (en) * | 2003-10-31 | 2013-06-26 | Phoseon Technology, Inc. | Led light module and manufacturing method |
TWI257718B (en) * | 2004-03-18 | 2006-07-01 | Phoseon Technology Inc | Direct cooling of LEDs |
ATE541320T1 (en) * | 2004-11-18 | 2012-01-15 | Koninkl Philips Electronics Nv | ILLUMINATOR AND METHOD FOR PRODUCING SUCH AN ILLUMINATOR |
JP4800324B2 (en) * | 2004-12-30 | 2011-10-26 | フォーセン テクノロジー インク | Exposure equipment |
US9793247B2 (en) | 2005-01-10 | 2017-10-17 | Cree, Inc. | Solid state lighting component |
US9070850B2 (en) | 2007-10-31 | 2015-06-30 | Cree, Inc. | Light emitting diode package and method for fabricating same |
US7821023B2 (en) | 2005-01-10 | 2010-10-26 | Cree, Inc. | Solid state lighting component |
JP4241658B2 (en) * | 2005-04-14 | 2009-03-18 | シチズン電子株式会社 | Light emitting diode light source unit and light emitting diode light source formed using the same |
US8669572B2 (en) | 2005-06-10 | 2014-03-11 | Cree, Inc. | Power lamp package |
KR100671545B1 (en) * | 2005-07-01 | 2007-01-19 | 삼성전자주식회사 | Led array module |
TWM291088U (en) * | 2005-12-08 | 2006-05-21 | Upec Electronics Corp | Illuminating device |
US7798678B2 (en) * | 2005-12-30 | 2010-09-21 | 3M Innovative Properties Company | LED with compound encapsulant lens |
US7675145B2 (en) * | 2006-03-28 | 2010-03-09 | Cree Hong Kong Limited | Apparatus, system and method for use in mounting electronic elements |
US8969908B2 (en) * | 2006-04-04 | 2015-03-03 | Cree, Inc. | Uniform emission LED package |
US11210971B2 (en) | 2009-07-06 | 2021-12-28 | Cree Huizhou Solid State Lighting Company Limited | Light emitting diode display with tilted peak emission pattern |
US8748915B2 (en) | 2006-04-24 | 2014-06-10 | Cree Hong Kong Limited | Emitter package with angled or vertical LED |
US7635915B2 (en) | 2006-04-26 | 2009-12-22 | Cree Hong Kong Limited | Apparatus and method for use in mounting electronic elements |
US8735920B2 (en) | 2006-07-31 | 2014-05-27 | Cree, Inc. | Light emitting diode package with optical element |
US8367945B2 (en) | 2006-08-16 | 2013-02-05 | Cree Huizhou Opto Limited | Apparatus, system and method for use in mounting electronic elements |
US10295147B2 (en) | 2006-11-09 | 2019-05-21 | Cree, Inc. | LED array and method for fabricating same |
TWI307750B (en) * | 2006-11-22 | 2009-03-21 | Neobulb Technologies Inc | Outdoor high power light-emitting diode illuminating equipment |
US9024349B2 (en) | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US9711703B2 (en) | 2007-02-12 | 2017-07-18 | Cree Huizhou Opto Limited | Apparatus, system and method for use in mounting electronic elements |
US7535030B2 (en) * | 2007-05-22 | 2009-05-19 | Hsiang-Chou Lin | LED lamp with exposed heat-conductive fins |
US10505083B2 (en) * | 2007-07-11 | 2019-12-10 | Cree, Inc. | Coating method utilizing phosphor containment structure and devices fabricated using same |
US9401461B2 (en) * | 2007-07-11 | 2016-07-26 | Cree, Inc. | LED chip design for white conversion |
US10256385B2 (en) | 2007-10-31 | 2019-04-09 | Cree, Inc. | Light emitting die (LED) packages and related methods |
US8866169B2 (en) | 2007-10-31 | 2014-10-21 | Cree, Inc. | LED package with increased feature sizes |
USD615504S1 (en) | 2007-10-31 | 2010-05-11 | Cree, Inc. | Emitter package |
USD633631S1 (en) | 2007-12-14 | 2011-03-01 | Cree Hong Kong Limited | Light source of light emitting diode |
US7717591B2 (en) * | 2007-12-27 | 2010-05-18 | Lumination Llc | Incorporating reflective layers into LED systems and/or components |
USD634863S1 (en) | 2008-01-10 | 2011-03-22 | Cree Hong Kong Limited | Light source of light emitting diode |
US8637883B2 (en) | 2008-03-19 | 2014-01-28 | Cree, Inc. | Low index spacer layer in LED devices |
US8877524B2 (en) * | 2008-03-31 | 2014-11-04 | Cree, Inc. | Emission tuning methods and devices fabricated utilizing methods |
US8049230B2 (en) | 2008-05-16 | 2011-11-01 | Cree Huizhou Opto Limited | Apparatus and system for miniature surface mount devices |
US9425172B2 (en) | 2008-10-24 | 2016-08-23 | Cree, Inc. | Light emitter array |
US8791471B2 (en) | 2008-11-07 | 2014-07-29 | Cree Hong Kong Limited | Multi-chip light emitting diode modules |
US8368112B2 (en) | 2009-01-14 | 2013-02-05 | Cree Huizhou Opto Limited | Aligned multiple emitter package |
US8415692B2 (en) | 2009-07-06 | 2013-04-09 | Cree, Inc. | LED packages with scattering particle regions |
US8598809B2 (en) | 2009-08-19 | 2013-12-03 | Cree, Inc. | White light color changing solid state lighting and methods |
US9303861B2 (en) * | 2009-09-14 | 2016-04-05 | Us Vaopto, Inc. | Light emitting diode light source modules |
US8809820B2 (en) * | 2010-01-27 | 2014-08-19 | Heraeus Noblelight Fusion Uv Inc. | Micro-channel-cooled high heat load light emitting device |
US8350370B2 (en) | 2010-01-29 | 2013-01-08 | Cree Huizhou Opto Limited | Wide angle oval light emitting diode package |
US9012938B2 (en) | 2010-04-09 | 2015-04-21 | Cree, Inc. | High reflective substrate of light emitting devices with improved light output |
US20110260598A1 (en) * | 2010-04-23 | 2011-10-27 | Hang-Wan Liu | Led lamp tube |
US9222645B2 (en) | 2010-11-29 | 2015-12-29 | RTC Industries, Incorporated | LED lighting assembly and method of lighting for a merchandise display |
US11274808B2 (en) | 2010-06-17 | 2022-03-15 | Rtc Industries, Inc. | LED lighting assembly and method of lighting for a merchandise display |
US8864334B2 (en) * | 2010-11-29 | 2014-10-21 | Rtc Industries, Inc. | LED lighting assembly and method of lighting for a merchandise display |
US8455882B2 (en) | 2010-10-15 | 2013-06-04 | Cree, Inc. | High efficiency LEDs |
RU2607531C2 (en) | 2011-01-11 | 2017-01-10 | Конинклейке Филипс Н.В. | Lighting fixture |
US8558252B2 (en) | 2011-08-26 | 2013-10-15 | Cree, Inc. | White LEDs with emission wavelength correction |
US8564004B2 (en) | 2011-11-29 | 2013-10-22 | Cree, Inc. | Complex primary optics with intermediate elements |
WO2013142596A2 (en) | 2012-03-20 | 2013-09-26 | Rtc Industries, Inc. | Shelf gap spacer device for a merchandise display system |
US20150116999A1 (en) * | 2013-10-30 | 2015-04-30 | Avago Technologies General Ip (Singapore) Pte. Ltd | Mono-axial lens for multiple light sources |
US9601670B2 (en) | 2014-07-11 | 2017-03-21 | Cree, Inc. | Method to form primary optic with variable shapes and/or geometries without a substrate |
US10622522B2 (en) | 2014-09-05 | 2020-04-14 | Theodore Lowes | LED packages with chips having insulated surfaces |
US11622460B2 (en) * | 2019-10-23 | 2023-04-04 | Advanced Illumination, Inc. | Hermetic fastener-less enclosures and methods of sealing the same |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5935492A (en) * | 1982-08-23 | 1984-02-27 | Toshiba Corp | Manuscript lighting device |
JPS62200776A (en) * | 1986-02-28 | 1987-09-04 | Alps Electric Co Ltd | Substrate for light-emitting diode array |
JPH0548073A (en) * | 1991-08-14 | 1993-02-26 | Hitachi Ltd | Semiconductor device |
JPH05102522A (en) * | 1991-05-09 | 1993-04-23 | Stanley Electric Co Ltd | Manufacture of led display device |
EP0560605A1 (en) | 1992-03-11 | 1993-09-15 | Sharp Kabushiki Kaisha | Light-source device |
GB2276032A (en) * | 1993-03-08 | 1994-09-14 | Prp Optoelectronics Limited | A Radiation source |
US5479029A (en) * | 1991-10-26 | 1995-12-26 | Rohm Co., Ltd. | Sub-mount type device for emitting light |
WO2002005357A1 (en) * | 2000-07-10 | 2002-01-17 | Osram Opto Semiconductors Gmbh | Led module, method for producing the same and the use thereof |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2315709A1 (en) | 1973-03-29 | 1974-10-10 | Licentia Gmbh | RADIATION-EMISSING SEMI-CONDUCTOR ARRANGEMENT WITH HIGH RADIATION POWER |
GB1490978A (en) * | 1973-12-21 | 1977-11-09 | Marconi Co Ltd | Light emitting diode(led)arrays |
JPS58222578A (en) * | 1982-06-18 | 1983-12-24 | Toshiba Corp | Lighting device |
US5698866A (en) * | 1994-09-19 | 1997-12-16 | Pdt Systems, Inc. | Uniform illuminator for phototherapy |
JP3419930B2 (en) * | 1994-12-21 | 2003-06-23 | 三菱電機株式会社 | Semiconductor laser device and optical disk device equipped with this semiconductor laser device |
US6045240A (en) * | 1996-06-27 | 2000-04-04 | Relume Corporation | LED lamp assembly with means to conduct heat away from the LEDS |
US5857767A (en) * | 1996-09-23 | 1999-01-12 | Relume Corporation | Thermal management system for L.E.D. arrays |
US6188527B1 (en) * | 1999-04-12 | 2001-02-13 | Hewlett-Packard Company | LED array PCB with adhesive rod lens |
US6517218B2 (en) * | 2000-03-31 | 2003-02-11 | Relume Corporation | LED integrated heat sink |
US6634771B2 (en) * | 2001-08-24 | 2003-10-21 | Densen Cao | Semiconductor light source using a primary and secondary heat sink combination |
US6864513B2 (en) * | 2003-05-07 | 2005-03-08 | Kaylu Industrial Corporation | Light emitting diode bulb having high heat dissipating efficiency |
-
2002
- 2002-04-23 IE IE20020300A patent/IE20020300A1/en not_active IP Right Cessation
- 2002-04-23 EP EP02764089A patent/EP1386357A1/en not_active Withdrawn
- 2002-04-23 WO PCT/IE2002/000053 patent/WO2002086972A1/en not_active Application Discontinuation
-
2003
- 2003-10-22 US US10/689,641 patent/US6995405B2/en not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5935492A (en) * | 1982-08-23 | 1984-02-27 | Toshiba Corp | Manuscript lighting device |
JPS62200776A (en) * | 1986-02-28 | 1987-09-04 | Alps Electric Co Ltd | Substrate for light-emitting diode array |
JPH05102522A (en) * | 1991-05-09 | 1993-04-23 | Stanley Electric Co Ltd | Manufacture of led display device |
JPH0548073A (en) * | 1991-08-14 | 1993-02-26 | Hitachi Ltd | Semiconductor device |
US5479029A (en) * | 1991-10-26 | 1995-12-26 | Rohm Co., Ltd. | Sub-mount type device for emitting light |
EP0560605A1 (en) | 1992-03-11 | 1993-09-15 | Sharp Kabushiki Kaisha | Light-source device |
GB2276032A (en) * | 1993-03-08 | 1994-09-14 | Prp Optoelectronics Limited | A Radiation source |
WO2002005357A1 (en) * | 2000-07-10 | 2002-01-17 | Osram Opto Semiconductors Gmbh | Led module, method for producing the same and the use thereof |
Non-Patent Citations (4)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 008, no. 123 (E - 249) 8 June 1984 (1984-06-08) * |
PATENT ABSTRACTS OF JAPAN vol. 012, no. 054 (E - 583) 18 February 1988 (1988-02-18) * |
PATENT ABSTRACTS OF JAPAN vol. 017, no. 344 (E - 1390) 29 June 1993 (1993-06-29) * |
PATENT ABSTRACTS OF JAPAN vol. 017, no. 453 (E - 1417) 19 August 1993 (1993-08-19) * |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10401012B2 (en) | 2002-05-08 | 2019-09-03 | Phoseon Technology, Inc. | High efficiency solid-state light source and methods of use and manufacture |
WO2003098707A1 (en) * | 2002-05-22 | 2003-11-27 | Applied Optotech Limited | Led array |
US7659547B2 (en) | 2002-05-22 | 2010-02-09 | Phoseon Technology, Inc. | LED array |
US7163327B2 (en) | 2002-12-02 | 2007-01-16 | 3M Innovative Properties Company | Illumination system using a plurality of light sources |
WO2005062089A1 (en) * | 2003-12-02 | 2005-07-07 | 3M Innovative Properties Company | Solid state light device |
US7202489B2 (en) | 2003-12-02 | 2007-04-10 | 3M Innovative Properties Company | LED modifying apparatus and method |
WO2005113877A1 (en) * | 2004-05-21 | 2005-12-01 | Tokai Kogyo Mishin Kabushiki Kaisha | Sewing machine |
EP2317552A3 (en) * | 2009-10-30 | 2013-07-31 | Toshiba Lighting & Technology Corporation | Light-emitting device, method of manufacturing light-emitting device, and illumination device |
US8816381B2 (en) | 2009-10-30 | 2014-08-26 | Toshiba Lighting & Technology Corporation | Light-emitting device, method of manufacturing light-emitting device, and illumination device |
Also Published As
Publication number | Publication date |
---|---|
US20040080939A1 (en) | 2004-04-29 |
EP1386357A1 (en) | 2004-02-04 |
US6995405B2 (en) | 2006-02-07 |
IE20020300A1 (en) | 2003-03-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6995405B2 (en) | Illuminator | |
JP5520242B2 (en) | Power surface mounted light emitting die package | |
JP5746076B2 (en) | Semiconductor light emitting device package submount and semiconductor light emitting device package including the submount | |
US7923831B2 (en) | LED-based light source having improved thermal dissipation | |
TWI382561B (en) | Power light emitting die package with reflecting lens and the method of making the same | |
JP3850665B2 (en) | Semiconductor light emitting emitter package | |
JP5140711B2 (en) | LED package die with one small footprint | |
US7582496B2 (en) | LED package using Si substrate and fabricating method thereof | |
KR101311635B1 (en) | Surface mount light emitting chip package | |
US8093614B2 (en) | LED array | |
US8525211B2 (en) | Light emitting device package and a lighting unit with base having via hole | |
EP2469613B1 (en) | Light emitting device and illumination apparatus using the same | |
JP2000277808A (en) | Light source device and its manufacture | |
JP4345591B2 (en) | Light emitting device | |
KR20080087405A (en) | Light emitting diode package and method for fabricating the same diode | |
WO2003098707A1 (en) | Led array | |
IE83472B1 (en) | An illuminator |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SI SK SL TJ TM TN TR TT TZ UA UG US UZ VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
WWE | Wipo information: entry into national phase |
Ref document number: 10689641 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2002764089 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 2002764089 Country of ref document: EP |
|
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
NENP | Non-entry into the national phase |
Ref country code: JP |
|
WWW | Wipo information: withdrawn in national office |
Country of ref document: JP |