WO2002084861A2 - Multi-band amplifier having multi-tap rf choke - Google Patents
Multi-band amplifier having multi-tap rf choke Download PDFInfo
- Publication number
- WO2002084861A2 WO2002084861A2 PCT/US2002/011783 US0211783W WO02084861A2 WO 2002084861 A2 WO2002084861 A2 WO 2002084861A2 US 0211783 W US0211783 W US 0211783W WO 02084861 A2 WO02084861 A2 WO 02084861A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- amplifier
- stage
- tap
- choke
- coil
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 230000005669 field effect Effects 0.000 claims description 2
- 230000010354 integration Effects 0.000 abstract description 4
- 230000003321 amplification Effects 0.000 description 10
- 238000003199 nucleic acid amplification method Methods 0.000 description 10
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/602—Combinations of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/191—Tuned amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/39—Different band amplifiers are coupled in parallel to broadband the whole amplifying circuit
Definitions
- the present invention relates to amplifiers, particular amplifier integrated circuits having an on-chip inductor.
- Example systems include those specified by the GSM and ANSI-136 standards, which are time division multiple access (TDMA) communication systems, the CDMA standard (IS-95) and combinations of the same (so- called multi-mode systems).
- TDMA time division multiple access
- IS-95 CDMA standard
- multi-mode systems the proliferation of competing standards is increasing with the adoption of different 2.5 and 3G mobile communications standards, such as EDGE, UMTS (WCDMA), CDMA2000, etc.
- EDGE EDGE
- UMTS WCDMA
- CDMA2000 Code Division Multiple Access 2000
- a multi-band amplifier For a multi-band phone, a multi-band amplifier is required, typically provided in the form of a semiconductor product. Dual-band, tri-band, and even quad- band phones have entered production or been the subject of discussion. Such amplifiers have typically required substantial duplication and exhibited very little sharing of components. Hence, if a single bandr amplifier required X mm 2 of semiconductor area, a dual-band amplifier would typically require close to 2X, a tri- band amplifier close to 3X, etc. As the number of bands supported increases, the attractiveness of such a model greatly decreases.
- An improvement is therefore sought to increase the density of integration of multi-band amplifiers.
- An amplifier circuit formed on a single semiconductor substrate includes a first amplifier having at least one stage for amplifying signals within a first fre- quency band; a first amplifier having at least one stage for amplifying signals within a second frequency band; and a tapped coil having one end thereof coupled to a stage of the first amplifier and a tap thereof coupled to a stage of the second amplifier.
- the amplifier circuit may be an RF amplifier circuit, a first portion of the tapped coil serving as an RF choke for said stage of the first amplifier, and a second portion of the tapped coil serving as an RF choke for said stage of the second amplifier. Sharing the tapped coil between multiple band amplifiers increases integration density.
- Figure 1 is a schematic illustration of a multi-band amplifier in which a tapped coil is shared by multiple amplifiers
- Figure 2 is a plan view of the tapped choke of Figure 1 ;
- Figure 3 is a diagram of a circuit using a multi-tap coil.
- a first amplification chain 1 is provided for a first frequency band
- a second amplification chain 2 is provided for a second frequency band.
- the amplification chains will typically have multiple amplifier stages connected in cascade.
- the amplification chains each have three stages (la, lb, lc; 2a, 2b, 2c).
- the amplifier stages maybe realized using semiconductor active devices such as field effect transistors (FETs), bipolar transistors, etc.
- An RF choke i.e., coil or other inductor
- each amplifier stage is coupled from a power source to a power supply input of that stage.
- the power supplies of each of the stages are separately controllable to perform power control and/or modulation as described, for example, in U.S. Application Serial No. (Dkt. No.
- At least one RF choke, L 12a is provided, together with the amplification chains 1 and 2, on a monolithic semiconductor substrate 10 such as silicon, GaAs, SiGe, etc.
- a monolithic semiconductor substrate 10 such as silicon, GaAs, SiGe, etc.
- a tapped or multi-tap RF choke is provided on chip and is shared by two or more different amplifier stages, within the same amplification chain or different amplification chains.
- the tapped RF choke L ⁇ 2a is shared by the first stage la of the amplification chain 1 and the first stage 2a of the amplification chain 2.
- a serpentine conductive (e.g., metal) coil of the general form shown is formed on an insulating layer.
- the coil has two ends and at least one tap intermediate the two ends.
- a second conductive layer is used to form a conductive path from the interior of the coil to the exterior of the coil.
- the intermediate tap may occur at a point representing only a few turns, one turn, or a fraction of a turn.
- the inductor coil formed using a 0.5um process occupies an area of about 0.3 x 0.3mm'" and has a total of 5 turns.
- the serpentine traverses a fraction of a rum (e.g., slightly more than 1/2 rum), forming an RF choke coupled to the first stage of a high band amplification chain.
- the coil is formed using a known air-bridge process that allows an increased Q value to be realized.
- supporting material underlying the serpentine conductor is selectively etched away, such that the conductor is "supported by pillars at intervals but is otherwise suspended in air.
- a coil LI has two taps. One tap is coupled to a stage Q3, another tap is coupled to a stage Q2, and the end of the coil is coupled to a stage Ql.
- drain or collector inductor for a multi-band/multi-transistor - amplifier is shared in the foregoing manner, it is assumed that only one transistor is on at a given time.
- the transistor needing the largest inductance defines the overall inductor size.
- the other transistors sharing the inductor tap at specified points for a lesser inductance.
- the off-transistors present a high impedance to the inductor and have only parasitic effects on its value.
Abstract
An amplifier circuit formed on a single semiconductor substrate includes a first amplifier having at least one stage for amplifying signals within a first frequency band, a first amplifier having at least one stage for amplifying signals within a second frequency band; and a tapped coil having one end thereof coupled to a stage of the first amplifier and a tap thereof coupled to a stage of the second amplifier. The amplifier circuit may be an RF amplifier circuit, a first portion of the tapped coil serving as an RF choke for said stage of the first amplifier, and a second portion of the tapped coil serving as an RF choke for said stage of the second amplifier. Sharing the tapped coil between multiple band amplifiers increases integration density.
Description
MULTI-BAND AMPLIFIER HAVING MULTI-TAP RF CHOKE
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to amplifiers, particular amplifier integrated circuits having an on-chip inductor.
2. State of the Art
Different mobile communications systems are prevalent in different geographical regions. Example systems include those specified by the GSM and ANSI-136 standards, which are time division multiple access (TDMA) communication systems, the CDMA standard (IS-95) and combinations of the same (so- called multi-mode systems). Furthermore, the proliferation of competing standards is increasing with the adoption of different 2.5 and 3G mobile communications standards, such as EDGE, UMTS (WCDMA), CDMA2000, etc. Hence, although the vision of a "world phone" has been repeatedly articulated, actually building such a phone economically has proved challenging.
For a multi-band phone, a multi-band amplifier is required, typically provided in the form of a semiconductor product. Dual-band, tri-band, and even quad- band phones have entered production or been the subject of discussion. Such amplifiers have typically required substantial duplication and exhibited very little sharing of components. Hence, if a single bandr amplifier required X mm2 of semiconductor area, a dual-band amplifier would typically require close to 2X, a tri- band amplifier close to 3X, etc. As the number of bands supported increases, the attractiveness of such a model greatly decreases.
An improvement is therefore sought to increase the density of integration of multi-band amplifiers.
SUMMARY OF THE INVENTION An amplifier circuit formed on a single semiconductor substrate includes a first amplifier having at least one stage for amplifying signals within a first fre-
quency band; a first amplifier having at least one stage for amplifying signals within a second frequency band; and a tapped coil having one end thereof coupled to a stage of the first amplifier and a tap thereof coupled to a stage of the second amplifier. The amplifier circuit may be an RF amplifier circuit, a first portion of the tapped coil serving as an RF choke for said stage of the first amplifier, and a second portion of the tapped coil serving as an RF choke for said stage of the second amplifier. Sharing the tapped coil between multiple band amplifiers increases integration density.
BRIEF DESCRIPTION OF THE DRAWING The present invention may be further understood from the following description in conjunction with the appended drawing. In the drawing:
Figure 1 is a schematic illustration of a multi-band amplifier in which a tapped coil is shared by multiple amplifiers;
Figure 2 is a plan view of the tapped choke of Figure 1 ; and
Figure 3 is a diagram of a circuit using a multi-tap coil.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Referring now to Figure 1, a diagram is shown of a dual-band RF power amplifier with which the present invention may be used. In the illustrated embodiment, a first amplification chain 1 is provided for a first frequency band, and a second amplification chain 2 is provided for a second frequency band. The amplification chains will typically have multiple amplifier stages connected in cascade. In the illustrated embodiment, the amplification chains each have three stages (la, lb, lc; 2a, 2b, 2c). The amplifier stages maybe realized using semiconductor active devices such as field effect transistors (FETs), bipolar transistors, etc.
An RF choke (i.e., coil or other inductor) is provided for each amplifier stage, coupled from a power source to a power supply input of that stage. Prefera-
bly, the power supplies of each of the stages (VDDj, VDD2-ι. VDD2-2> VDD3_ι, VDrj)3.2) are separately controllable to perform power control and/or modulation as described, for example, in U.S. Application Serial No. (Dkt. No.
1103 LDM.US), filed on even date herewith and incorporated herein by reference.
In the illustrated embodiment, at least one RF choke, L12a, is provided, together with the amplification chains 1 and 2, on a monolithic semiconductor substrate 10 such as silicon, GaAs, SiGe, etc. Providing the RF choke on chip reduces part count, an important factor in the manufacture of wireless devices.
A competing factor, however, is the desire for efficient use of semiconductor "real estate." An RF choke can occupy considerable area on the semiconductor die. In order to conserve area, a tapped or multi-tap RF choke is provided on chip and is shared by two or more different amplifier stages, within the same amplification chain or different amplification chains. In the illustrated embodiment, the tapped RF choke Lτ2a is shared by the first stage la of the amplification chain 1 and the first stage 2a of the amplification chain 2.
Referring to Figure 2, a plan view is shown of an example of a layout for a multi-tap RF choke. A serpentine conductive (e.g., metal) coil of the general form shown is formed on an insulating layer. The coil has two ends and at least one tap intermediate the two ends. To form a conductive path from the interior of the coil to the exterior of the coil, a second conductive layer is used.
Depending on the inductance values required, whereas the entire coil may have many turns, the intermediate tap may occur at a point representing only a few turns, one turn, or a fraction of a turn. In the case of one dual-band amplifier structure, for example, operating in the 800MHz and 1900MHz frequency bands, the inductor coil, formed using a 0.5um process occupies an area of about 0.3 x 0.3mm'" and has a total of 5 turns. Between the input terminal and the tap, the serpentine traverses a fraction of a rum (e.g., slightly more than 1/2 rum), forming an
RF choke coupled to the first stage of a high band amplification chain.
In one embodiment, the coil is formed using a known air-bridge process that allows an increased Q value to be realized. In the air-bridge process, supporting material underlying the serpentine conductor is selectively etched away, such that the conductor is" supported by pillars at intervals but is otherwise suspended in air.
Referring to Figure 3, it is possible for the coil to have more than one tap, allowing it to be coupled to more than two stages. In the example of Figure 3, a coil LI has two taps. One tap is coupled to a stage Q3, another tap is coupled to a stage Q2, and the end of the coil is coupled to a stage Ql.
Where the drain or collector inductor for a multi-band/multi-transistor - amplifier is shared in the foregoing manner, it is assumed that only one transistor is on at a given time. The transistor needing the largest inductance defines the overall inductor size. The other transistors sharing the inductor tap at specified points for a lesser inductance. The off-transistors present a high impedance to the inductor and have only parasitic effects on its value.
Thus, there has been described an advantageous amplifier structure in which a tapped coil is shared by multiple amplifier stages. Sharing the tapped coil between multiple amplifier stages increases integration density.
It will be appreciated by those of ordinary skill in the art that the invention can be embodied in other specific forms without departing from the spirit or essential character thereof. The presently disclosed embodiments are therefore considered in all respects to be illustrative and not restrictive. The scope of the invention is indicated by the appended claims rather than the foregoing description, and all changes which come within the meaning and range of equivalents thereof are intended to be embraced therein.
Claims
1. An amplifier circuit formed on a single semiconductor substrate, comprising: a first amplifier having at least one stage for amplifying signals within a first frequency band; a second amplifier having at least one stage for amplifying signals within a first frequency band; and a tapped coil having a first tap thereof coupled to a stage of the first amplifier and a second tap thereof coupled to a stage of the second amplifier.
2: The apparatus of Claim 1, wherein the amplifier circuit is an RF amplifier circuit, a first portion.of the tapped coil serving as an RF choke for said stage of the first amplifier, and a second portion of the tapped coil serving as an RF choke for said stage of the second amplifier.
3. The apparatus of Claim 2, wherein the coil is supported along at least a portion of the length thereof by an airbridge structure.
4. The apparatus of Claim 2, wherein the first and second amplifiers each comprise multiple stages.
5. The apparatus of Claim 4, wherein the first and second portions of the multi-tap coil serve as RF chokes for respective first stages of the first and second amplifiers.
6. The apparatus of Claim 5, wherein multiple amplifier stages each includes a field effect transistor.
7. The apparatus of Claim 5, wherein multiple amplifier stages each includes a bipolar transistor.
8. An amplifier circuit formed on a single semiconductor substrate, comprising: a first amplifier stage; a second amplifier stage; and a tapped coil having a one end thereof coupled to the first amplifier stage and a having a tap thereof coupled to the second amplifier stage.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/834,056 | 2001-04-11 | ||
| US09/834,056 US6356155B1 (en) | 2001-04-11 | 2001-04-11 | Multi-band amplifier having multi-tap RF choke |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2002084861A2 true WO2002084861A2 (en) | 2002-10-24 |
| WO2002084861A3 WO2002084861A3 (en) | 2002-12-27 |
Family
ID=25265980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2002/011783 WO2002084861A2 (en) | 2001-04-11 | 2002-04-11 | Multi-band amplifier having multi-tap rf choke |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US6356155B1 (en) |
| TW (1) | TW583826B (en) |
| WO (1) | WO2002084861A2 (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7545865B2 (en) * | 2002-12-03 | 2009-06-09 | M/A-Com, Inc. | Apparatus, methods and articles of manufacture for wideband signal processing |
| US7187231B2 (en) * | 2002-12-02 | 2007-03-06 | M/A-Com, Inc. | Apparatus, methods and articles of manufacture for multiband signal processing |
| US7526260B2 (en) * | 2002-11-14 | 2009-04-28 | M/A-Com Eurotec, B.V. | Apparatus, methods and articles of manufacture for linear signal modification |
| US7298854B2 (en) * | 2002-12-04 | 2007-11-20 | M/A-Com, Inc. | Apparatus, methods and articles of manufacture for noise reduction in electromagnetic signal processing |
| US7245183B2 (en) * | 2002-11-14 | 2007-07-17 | M/A-Com Eurotec Bv | Apparatus, methods and articles of manufacture for processing an electromagnetic wave |
| US6891432B2 (en) * | 2002-11-14 | 2005-05-10 | Mia-Com, Inc. | Apparatus, methods and articles of manufacture for electromagnetic processing |
| US7203262B2 (en) | 2003-05-13 | 2007-04-10 | M/A-Com, Inc. | Methods and apparatus for signal modification in a fractional-N phase locked loop system |
| US6924699B2 (en) * | 2003-03-06 | 2005-08-02 | M/A-Com, Inc. | Apparatus, methods and articles of manufacture for digital modification in electromagnetic signal processing |
| US6859098B2 (en) | 2003-01-17 | 2005-02-22 | M/A-Com, Inc. | Apparatus, methods and articles of manufacture for control in an electromagnetic processor |
| US7209727B2 (en) * | 2003-06-12 | 2007-04-24 | Broadcom Corporation | Integrated circuit radio front-end architecture and applications thereof |
| US7480511B2 (en) * | 2003-09-19 | 2009-01-20 | Trimble Navigation Limited | Method and system for delivering virtual reference station data |
| US7091778B2 (en) | 2003-09-19 | 2006-08-15 | M/A-Com, Inc. | Adaptive wideband digital amplifier for linearly modulated signal amplification and transmission |
| US7343138B2 (en) * | 2003-12-08 | 2008-03-11 | M/A-Com, Inc. | Compensating for load pull in electromagentic signal propagation using adaptive impedance matching |
| JP2005184409A (en) * | 2003-12-19 | 2005-07-07 | Renesas Technology Corp | Semiconductor integrated circuit device for communication and electronic component equipped with the same |
| DE102008044845B4 (en) * | 2008-08-28 | 2015-04-09 | Epcos Ag | Bias network |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3274506A (en) * | 1962-06-13 | 1966-09-20 | Maeda Hisao | Transistor type broad band amplifier utilizing a choke coil |
| US3703685A (en) * | 1969-09-10 | 1972-11-21 | Labtron Corp Of America | Multiband antenna with associated r.f. amplifier |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3995226A (en) * | 1976-06-10 | 1976-11-30 | Berning David W | Audio amplifier |
| US4636740A (en) * | 1984-04-23 | 1987-01-13 | Kager Dennis L | Control circuit for varying power output of push-pull tube amplifiers |
| IT1220183B (en) * | 1987-07-15 | 1990-06-06 | Sgs Microelettrica Spa | SEVEN FOOT DEVICE FOR AUTDIO AMPLIFIER, AUTOMATICALLY SWITCHED IN BRIDGE OR STEREO CONFIGURATION |
-
2001
- 2001-04-11 US US09/834,056 patent/US6356155B1/en not_active Expired - Lifetime
-
2002
- 2002-04-11 TW TW091107299A patent/TW583826B/en not_active IP Right Cessation
- 2002-04-11 WO PCT/US2002/011783 patent/WO2002084861A2/en not_active Application Discontinuation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3274506A (en) * | 1962-06-13 | 1966-09-20 | Maeda Hisao | Transistor type broad band amplifier utilizing a choke coil |
| US3703685A (en) * | 1969-09-10 | 1972-11-21 | Labtron Corp Of America | Multiband antenna with associated r.f. amplifier |
Non-Patent Citations (5)
| Title |
|---|
| FRLAN E ET AL: "Computer aided design of square spiral transformers and inductors (MIC application)" XP010085669 page 41, column 2 * |
| GRAU G ET AL: "A current-folded up-conversion mixer and a VCO with center-tapped inductor in a SiGe-HBT technology for 5 GHz wireless LAN applications" , BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 1999. PROCEEDINGS OF THE 1999 MINNEAPOLIS, MN, USA 26-28 SEPT. 1999, PISCATAWAY, NJ, USA,IEEE, US, PAGE(S) 161-164 XP010359503 ISBN: 0-7803-5712-4 page 162 -page 163; figures 4,5 * |
| LONG J R ET AL: "A 5.1-5.8 GHz low-power image-reject downconverter in SiGe technology" , BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 1999. PROCEEDINGS OF THE 1999 MINNEAPOLIS, MN, USA 26-28 SEPT. 1999, PISCATAWAY, NJ, USA,IEEE, US, PAGE(S) 67-70 XP010359511 ISBN: 0-7803-5712-4 figure 3 * |
| WILSON D G ET AL: "Integrated RF receiver front ends and frequency synthesizers for wireless" XP010164715 page 377-379 * |
| YANG ET AL: "A compact and wideband GaAs P-HEMT distributed amplifier IC basewd on a micro-machined CPW" 2000 , IEEE, MTT-S DIGEST, TU3D-3 XP002217571 abstract; figures 4,6 * |
Also Published As
| Publication number | Publication date |
|---|---|
| TW583826B (en) | 2004-04-11 |
| US6356155B1 (en) | 2002-03-12 |
| WO2002084861A3 (en) | 2002-12-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6356155B1 (en) | Multi-band amplifier having multi-tap RF choke | |
| US7092691B2 (en) | Switchless multi-resonant, multi-band power amplifier | |
| JP4202852B2 (en) | Communication electronic parts and transmission / reception switching semiconductor device | |
| US7023272B2 (en) | Multi-band low noise amplifier system | |
| EP2131492B1 (en) | Rf amplification device | |
| Ho et al. | A 1-V CMOS power amplifier for Bluetooth applications | |
| US7091775B2 (en) | Multi-band power amplifier module for wireless communication devices | |
| US20020082045A1 (en) | Mobile telephone apparatus | |
| CN104753476A (en) | Multimode multi-frequency power amplifier | |
| KR20040015080A (en) | Variable gain low-noise amplifier for a wireless terminal | |
| US20090115525A1 (en) | Frequency tunable low noise amplifier | |
| Hadipour et al. | A 40GHz to 67GHz bandwidth 23dB gain 5.8 dB maximum NF mm-Wave LNA in 28nm CMOS | |
| Slimane et al. | A 0.9-V, 7-mW UWB LNA for 3.1–10.6-GHz wireless applications in 0.18-μm CMOS technology | |
| CN104779919A (en) | Self-biased ultra wideband low-power-consumption low-noise amplifier (LNA) | |
| Fallesen et al. | A 1 W 0.35/spl mu/m CMOS power amplifier for GSM-1800 with 45% PAE | |
| Tsai et al. | An E-band transformer-based 90-nm CMOS LNA | |
| US7119614B2 (en) | Multi-band power amplifier module for wireless communications | |
| Lavasani et al. | A pseudo-concurrent 0.18/spl mu/m multi-band CMOS LNA | |
| Jou et al. | Design of a fully integrated concurrent triple-band CMOS low noise amplifier | |
| JPH11112249A (en) | High frequency power amplifier module | |
| Zito et al. | A novel LNA topology with transformer-based input integrated matching and its 60-GHz millimeter-wave CMOS 65-nm design | |
| CN111934663A (en) | Transfer printing for radio frequency applications | |
| Youn et al. | A 2-GHz RF front-end transceiver chipset in CMOS technology for PCS and IMT-2000 applications | |
| CN100495939C (en) | Method for designing electronic circuit in multiple frequency ranges, and circuits | |
| US20240007060A1 (en) | Wideband Coupled Input Impedance Matching LNA Architecture |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW |
|
| AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
| AK | Designated states |
Kind code of ref document: A3 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW |
|
| AL | Designated countries for regional patents |
Kind code of ref document: A3 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
| REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
| 122 | Ep: pct application non-entry in european phase | ||
| NENP | Non-entry into the national phase |
Ref country code: JP |
|
| WWW | Wipo information: withdrawn in national office |
Country of ref document: JP |