WO2002078087A3 - Semiconductor chip having multiple conductive layers in an opening, and method for fabricating same - Google Patents
Semiconductor chip having multiple conductive layers in an opening, and method for fabricating same Download PDFInfo
- Publication number
- WO2002078087A3 WO2002078087A3 PCT/US2002/005371 US0205371W WO02078087A3 WO 2002078087 A3 WO2002078087 A3 WO 2002078087A3 US 0205371 W US0205371 W US 0205371W WO 02078087 A3 WO02078087 A3 WO 02078087A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- opening
- conductive layers
- semiconductor chip
- multiple conductive
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 6
- 239000003990 capacitor Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6616—Vertical connections, e.g. vias
- H01L2223/6622—Coaxial feed-throughs in active or passive substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/049—Nitrides composed of metals from groups of the periodic table
- H01L2924/0494—4th Group
- H01L2924/04941—TiN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/977—Thinning or removal of substrate
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2003-7010999A KR100509898B1 (en) | 2001-02-22 | 2002-02-20 | Semiconductor structures having multiple conductive layers in an opening, and methods for fabricating same |
EP02739087A EP1386355A2 (en) | 2001-02-22 | 2002-02-20 | Semiconductor chip having multiple conductive layers in an opening, and method for fabricating same |
JP2002576018A JP4063078B2 (en) | 2001-02-22 | 2002-02-20 | Semiconductor structure having a plurality of conductive layers formed in an opening, and a method for manufacturing the same |
AU2002311762A AU2002311762A1 (en) | 2001-02-22 | 2002-02-20 | Semiconductor chip having multiple conductive layers in an opening, and method for fabricating same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/792,311 US6498381B2 (en) | 2001-02-22 | 2001-02-22 | Semiconductor structures having multiple conductive layers in an opening, and methods for fabricating same |
US09/792,311 | 2001-02-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002078087A2 WO2002078087A2 (en) | 2002-10-03 |
WO2002078087A3 true WO2002078087A3 (en) | 2003-11-20 |
Family
ID=25156458
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2002/005371 WO2002078087A2 (en) | 2001-02-22 | 2002-02-20 | Semiconductor chip having multiple conductive layers in an opening, and method for fabricating same |
Country Status (6)
Country | Link |
---|---|
US (3) | US6498381B2 (en) |
EP (1) | EP1386355A2 (en) |
JP (1) | JP4063078B2 (en) |
KR (1) | KR100509898B1 (en) |
AU (1) | AU2002311762A1 (en) |
WO (1) | WO2002078087A2 (en) |
Families Citing this family (132)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020163072A1 (en) * | 2001-05-01 | 2002-11-07 | Subhash Gupta | Method for bonding wafers to produce stacked integrated circuits |
JP3788268B2 (en) * | 2001-05-14 | 2006-06-21 | ソニー株式会社 | Manufacturing method of semiconductor device |
JP4468609B2 (en) * | 2001-05-21 | 2010-05-26 | 株式会社ルネサステクノロジ | Semiconductor device |
US7948725B2 (en) * | 2001-09-06 | 2011-05-24 | Fuji Electric Systems Co., Ltd. | Composite integrated semiconductor device |
DE10241086B4 (en) * | 2001-09-06 | 2016-02-18 | Fuji Electric Co., Ltd | Composite integrated semiconductor device |
US20030057544A1 (en) * | 2001-09-13 | 2003-03-27 | Nathan Richard J. | Integrated assembly protocol |
US20030151132A1 (en) * | 2002-02-14 | 2003-08-14 | Crippen Warren Stuart | Microelectronic die providing improved heat dissipation, and method of packaging same |
US20030153119A1 (en) * | 2002-02-14 | 2003-08-14 | Nathan Richard J. | Integrated circuit package and method for fabrication |
US20060246621A1 (en) * | 2002-02-14 | 2006-11-02 | Intel Corporation | Microelectronic die including thermally conductive structure in a substrate thereof and method of forming same |
JP2003273155A (en) * | 2002-03-18 | 2003-09-26 | Fujitsu Ltd | Semiconductor device and method of manufacturing the same |
JP4110390B2 (en) * | 2002-03-19 | 2008-07-02 | セイコーエプソン株式会社 | Manufacturing method of semiconductor device |
US7026223B2 (en) * | 2002-03-28 | 2006-04-11 | M/A-Com, Inc | Hermetic electric component package |
JP4285629B2 (en) * | 2002-04-25 | 2009-06-24 | 富士通株式会社 | Method for manufacturing interposer substrate mounting integrated circuit |
JP4057399B2 (en) * | 2002-11-07 | 2008-03-05 | 株式会社フジクラ | Method for filling metal into fine holes |
JP2004228392A (en) * | 2003-01-24 | 2004-08-12 | Seiko Epson Corp | Manufacturing method of semiconductor device and manufacturing method of semiconductor module |
JP2004297019A (en) * | 2003-03-28 | 2004-10-21 | Seiko Epson Corp | Semiconductor device, circuit board, and electronic apparatus |
US6897148B2 (en) | 2003-04-09 | 2005-05-24 | Tru-Si Technologies, Inc. | Electroplating and electroless plating of conductive materials into openings, and structures obtained thereby |
US7098518B1 (en) | 2003-08-27 | 2006-08-29 | National Semiconductor Corporation | Die-level opto-electronic device and method of making same |
US7345350B2 (en) | 2003-09-23 | 2008-03-18 | Micron Technology, Inc. | Process and integration scheme for fabricating conductive components, through-vias and semiconductor components including conductive through-wafer vias |
WO2005031862A1 (en) * | 2003-09-26 | 2005-04-07 | Tessera, Inc. | Structure and method of making sealed capped chips |
US7101792B2 (en) * | 2003-10-09 | 2006-09-05 | Micron Technology, Inc. | Methods of plating via interconnects |
US20050116344A1 (en) * | 2003-10-29 | 2005-06-02 | Tessera, Inc. | Microelectronic element having trace formed after bond layer |
WO2005059961A2 (en) * | 2003-12-10 | 2005-06-30 | The Regents Of The University Of California | Low crosstalk substrate for mixed-signal integrated circuits |
US7060601B2 (en) * | 2003-12-17 | 2006-06-13 | Tru-Si Technologies, Inc. | Packaging substrates for integrated circuits and soldering methods |
US7049170B2 (en) * | 2003-12-17 | 2006-05-23 | Tru-Si Technologies, Inc. | Integrated circuits and packaging substrates with cavities, and attachment methods including insertion of protruding contact pads into cavities |
US7316063B2 (en) * | 2004-01-12 | 2008-01-08 | Micron Technology, Inc. | Methods of fabricating substrates including at least one conductive via |
US7012017B2 (en) * | 2004-01-29 | 2006-03-14 | 3M Innovative Properties Company | Partially etched dielectric film with conductive features |
US7282932B2 (en) * | 2004-03-02 | 2007-10-16 | Micron Technology, Inc. | Compliant contact pin assembly, card system and methods thereof |
JP3945493B2 (en) * | 2004-04-16 | 2007-07-18 | セイコーエプソン株式会社 | Semiconductor device and manufacturing method thereof |
JP2006019455A (en) | 2004-06-30 | 2006-01-19 | Nec Electronics Corp | Semiconductor device and manufacturing method thereof |
US7866038B2 (en) | 2004-07-06 | 2011-01-11 | Tokyo Electron Limited | Through substrate, interposer and manufacturing method of through substrate |
JP2006024653A (en) * | 2004-07-06 | 2006-01-26 | Tokyo Electron Ltd | Through substrate and manufacturing method thereof |
JP2006024654A (en) * | 2004-07-06 | 2006-01-26 | Tokyo Electron Ltd | Interposer |
US7791141B2 (en) * | 2004-07-09 | 2010-09-07 | International Business Machines Corporation | Field-enhanced programmable resistance memory cell |
KR20070055578A (en) * | 2004-08-31 | 2007-05-30 | 마쯔시다덴기산교 가부시키가이샤 | Micromachine device |
SG135065A1 (en) * | 2006-02-20 | 2007-09-28 | Micron Technology Inc | Conductive vias having two or more elements for providing communication between traces in different substrate planes, semiconductor device assemblies including such vias, and accompanying methods |
US7129567B2 (en) * | 2004-08-31 | 2006-10-31 | Micron Technology, Inc. | Substrate, semiconductor die, multichip module, and system including a via structure comprising a plurality of conductive elements |
US7109068B2 (en) * | 2004-08-31 | 2006-09-19 | Micron Technology, Inc. | Through-substrate interconnect fabrication methods |
US7150516B2 (en) * | 2004-09-28 | 2006-12-19 | Hewlett-Packard Development Company, L.P. | Integrated circuit and method for manufacturing |
EP1691383A1 (en) * | 2005-02-14 | 2006-08-16 | TDK Corporation | Capacitor, method of making the same, filter using the same, and dielectric thin film used for the same |
US20060183270A1 (en) * | 2005-02-14 | 2006-08-17 | Tessera, Inc. | Tools and methods for forming conductive bumps on microelectronic elements |
US8143095B2 (en) | 2005-03-22 | 2012-03-27 | Tessera, Inc. | Sequential fabrication of vertical conductive interconnects in capped chips |
CN101189921A (en) * | 2005-06-01 | 2008-05-28 | 松下电器产业株式会社 | Circuit base plate and its making method and electronic component using the same |
US7429529B2 (en) * | 2005-08-05 | 2008-09-30 | Farnworth Warren M | Methods of forming through-wafer interconnects and structures resulting therefrom |
WO2007023950A1 (en) * | 2005-08-26 | 2007-03-01 | Hitachi, Ltd. | Semiconductor device manufacturing method |
US7863187B2 (en) * | 2005-09-01 | 2011-01-04 | Micron Technology, Inc. | Microfeature workpieces and methods for forming interconnects in microfeature workpieces |
US7517798B2 (en) | 2005-09-01 | 2009-04-14 | Micron Technology, Inc. | Methods for forming through-wafer interconnects and structures resulting therefrom |
US7633167B2 (en) | 2005-09-29 | 2009-12-15 | Nec Electronics Corporation | Semiconductor device and method for manufacturing same |
US8153464B2 (en) * | 2005-10-18 | 2012-04-10 | International Rectifier Corporation | Wafer singulation process |
US20070138644A1 (en) * | 2005-12-15 | 2007-06-21 | Tessera, Inc. | Structure and method of making capped chip having discrete article assembled into vertical interconnect |
US7936062B2 (en) | 2006-01-23 | 2011-05-03 | Tessera Technologies Ireland Limited | Wafer level chip packaging |
US8394664B2 (en) * | 2006-02-02 | 2013-03-12 | William Marsh Rice University | Electrical device fabrication from nanotube formations |
TW200737506A (en) * | 2006-03-07 | 2007-10-01 | Sanyo Electric Co | Semiconductor device and manufacturing method of the same |
JP2007294652A (en) * | 2006-04-25 | 2007-11-08 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit device and method of manufacturing the same |
WO2008018524A1 (en) * | 2006-08-11 | 2008-02-14 | Sanyo Electric Co., Ltd. | Semiconductor device and its manufacturing method |
US7829438B2 (en) * | 2006-10-10 | 2010-11-09 | Tessera, Inc. | Edge connect wafer level stacking |
US7901989B2 (en) * | 2006-10-10 | 2011-03-08 | Tessera, Inc. | Reconstituted wafer level stacking |
US8513789B2 (en) | 2006-10-10 | 2013-08-20 | Tessera, Inc. | Edge connect wafer level stacking with leads extending along edges |
US7759166B2 (en) * | 2006-10-17 | 2010-07-20 | Tessera, Inc. | Microelectronic packages fabricated at the wafer level and methods therefor |
JP5010247B2 (en) * | 2006-11-20 | 2012-08-29 | オンセミコンダクター・トレーディング・リミテッド | Semiconductor device and manufacturing method thereof |
US7791199B2 (en) * | 2006-11-22 | 2010-09-07 | Tessera, Inc. | Packaged semiconductor chips |
US8569876B2 (en) * | 2006-11-22 | 2013-10-29 | Tessera, Inc. | Packaged semiconductor chips with array |
US20080136038A1 (en) * | 2006-12-06 | 2008-06-12 | Sergey Savastiouk | Integrated circuits with conductive features in through holes passing through other conductive features and through a semiconductor substrate |
US7952195B2 (en) * | 2006-12-28 | 2011-05-31 | Tessera, Inc. | Stacked packages with bridging traces |
US8604605B2 (en) | 2007-01-05 | 2013-12-10 | Invensas Corp. | Microelectronic assembly with multi-layer support structure |
US7719079B2 (en) * | 2007-01-18 | 2010-05-18 | International Business Machines Corporation | Chip carrier substrate capacitor and method for fabrication thereof |
TW200836322A (en) * | 2007-02-16 | 2008-09-01 | Touch Micro System Tech | Method of fabricating micro connectors |
JP5584474B2 (en) * | 2007-03-05 | 2014-09-03 | インヴェンサス・コーポレイション | Chip with rear contact connected to front contact by through via |
KR100843240B1 (en) * | 2007-03-23 | 2008-07-03 | 삼성전자주식회사 | Semiconductor device for wafer level stack and forming method of through electrode thereof |
US7882628B2 (en) * | 2007-05-30 | 2011-02-08 | Intel Corporation | Multi-chip packaging using an interposer such as a silicon based interposer with through-silicon-vias |
US7841080B2 (en) * | 2007-05-30 | 2010-11-30 | Intel Corporation | Multi-chip packaging using an interposer with through-vias |
US7825517B2 (en) * | 2007-07-16 | 2010-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for packaging semiconductor dies having through-silicon vias |
KR101458538B1 (en) | 2007-07-27 | 2014-11-07 | 테세라, 인코포레이티드 | A stacked microelectronic unit, and method of fabrication thereof |
KR101538648B1 (en) | 2007-07-31 | 2015-07-22 | 인벤사스 코포레이션 | Semiconductor packaging process using through silicon vias |
CN101861646B (en) | 2007-08-03 | 2015-03-18 | 泰塞拉公司 | Stack packages using reconstituted wafers |
US8043895B2 (en) | 2007-08-09 | 2011-10-25 | Tessera, Inc. | Method of fabricating stacked assembly including plurality of stacked microelectronic elements |
JP4961617B2 (en) * | 2007-10-01 | 2012-06-27 | 新光電気工業株式会社 | WIRING BOARD, MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR DEVICE |
US8440917B2 (en) * | 2007-11-19 | 2013-05-14 | International Business Machines Corporation | Method and apparatus to reduce impedance discontinuity in packages |
EP2081224A1 (en) * | 2007-12-27 | 2009-07-22 | Interuniversitaire Microelectronica Centrum vzw ( IMEC) | Maskless method of preparing metal contacts in a semiconductor substrate for bonding |
KR20100126714A (en) * | 2008-01-30 | 2010-12-02 | 이노벤트 테크놀로지스, 엘엘씨 | Method and apparatus for manufacture of via disk |
US20090212438A1 (en) * | 2008-02-26 | 2009-08-27 | Franz Kreupl | Integrated circuit device comprising conductive vias and method of making the same |
US9324611B2 (en) * | 2008-04-03 | 2016-04-26 | Micron Technology, Inc. | Corrosion resistant via connections in semiconductor substrates and methods of making same |
US7833895B2 (en) * | 2008-05-12 | 2010-11-16 | Texas Instruments Incorporated | TSVS having chemically exposed TSV tips for integrated circuit devices |
US8680662B2 (en) * | 2008-06-16 | 2014-03-25 | Tessera, Inc. | Wafer level edge stacking |
JP2010040862A (en) * | 2008-08-06 | 2010-02-18 | Fujikura Ltd | Semiconductor device |
IT1391239B1 (en) * | 2008-08-08 | 2011-12-01 | Milano Politecnico | METHOD FOR BUMP FORMATION IN SUBSTRATES WITH THROUGH VIA |
US8080862B2 (en) * | 2008-09-09 | 2011-12-20 | Qualcomm Incorporate | Systems and methods for enabling ESD protection on 3-D stacked devices |
US8168470B2 (en) | 2008-12-08 | 2012-05-01 | Stats Chippac, Ltd. | Semiconductor device and method of forming vertical interconnect structure in substrate for IPD and baseband circuit separated by high-resistivity molding compound |
US8513119B2 (en) | 2008-12-10 | 2013-08-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming bump structure having tapered sidewalls for stacked dies |
US20100171197A1 (en) * | 2009-01-05 | 2010-07-08 | Hung-Pin Chang | Isolation Structure for Stacked Dies |
US8093151B2 (en) | 2009-03-13 | 2012-01-10 | Stats Chippac, Ltd. | Semiconductor die and method of forming noise absorbing regions between THVS in peripheral region of the die |
EP2406821A2 (en) * | 2009-03-13 | 2012-01-18 | Tessera, Inc. | Stacked microelectronic assemblies having vias extending through bond pads |
US8263492B2 (en) | 2009-04-29 | 2012-09-11 | International Business Machines Corporation | Through substrate vias |
US8294240B2 (en) * | 2009-06-08 | 2012-10-23 | Qualcomm Incorporated | Through silicon via with embedded decoupling capacitor |
US8791549B2 (en) | 2009-09-22 | 2014-07-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer backside interconnect structure connected to TSVs |
US8558345B2 (en) * | 2009-11-09 | 2013-10-15 | International Business Machines Corporation | Integrated decoupling capacitor employing conductive through-substrate vias |
US8288844B2 (en) * | 2009-12-17 | 2012-10-16 | Stats Chippac Ltd. | Integrated circuit packaging system with package stacking and method of manufacture thereof |
US9299664B2 (en) * | 2010-01-18 | 2016-03-29 | Semiconductor Components Industries, Llc | Method of forming an EM protected semiconductor die |
CN102148202B (en) * | 2010-02-09 | 2016-06-08 | 精材科技股份有限公司 | Wafer encapsulation body and forming method thereof |
JP5609144B2 (en) * | 2010-02-19 | 2014-10-22 | ソニー株式会社 | Semiconductor device and through electrode test method |
JP5115573B2 (en) * | 2010-03-03 | 2013-01-09 | オムロン株式会社 | Method for manufacturing connection pad |
US8466059B2 (en) | 2010-03-30 | 2013-06-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-layer interconnect structure for stacked dies |
US8492878B2 (en) * | 2010-07-21 | 2013-07-23 | International Business Machines Corporation | Metal-contamination-free through-substrate via structure |
US8791575B2 (en) | 2010-07-23 | 2014-07-29 | Tessera, Inc. | Microelectronic elements having metallic pads overlying vias |
US9640437B2 (en) | 2010-07-23 | 2017-05-02 | Tessera, Inc. | Methods of forming semiconductor elements using micro-abrasive particle stream |
US8796135B2 (en) | 2010-07-23 | 2014-08-05 | Tessera, Inc. | Microelectronic elements with rear contacts connected with via first or via middle structures |
US8847380B2 (en) | 2010-09-17 | 2014-09-30 | Tessera, Inc. | Staged via formation from both sides of chip |
US8610259B2 (en) | 2010-09-17 | 2013-12-17 | Tessera, Inc. | Multi-function and shielded 3D interconnects |
US8736066B2 (en) | 2010-12-02 | 2014-05-27 | Tessera, Inc. | Stacked microelectronic assemby with TSVS formed in stages and carrier above chip |
US8587126B2 (en) | 2010-12-02 | 2013-11-19 | Tessera, Inc. | Stacked microelectronic assembly with TSVs formed in stages with plural active chips |
US8637968B2 (en) | 2010-12-02 | 2014-01-28 | Tessera, Inc. | Stacked microelectronic assembly having interposer connecting active chips |
US8610264B2 (en) | 2010-12-08 | 2013-12-17 | Tessera, Inc. | Compliant interconnects in wafers |
US8502340B2 (en) | 2010-12-09 | 2013-08-06 | Tessera, Inc. | High density three-dimensional integrated capacitors |
US8742541B2 (en) | 2010-12-09 | 2014-06-03 | Tessera, Inc. | High density three-dimensional integrated capacitors |
US9086368B2 (en) * | 2011-02-24 | 2015-07-21 | International Business Machines Corporation | Non-destructive determination of the moisture content in an electronic circuit board using comparison of capacitance measurements acquired from test coupons, and design structure/process therefor |
US8900994B2 (en) | 2011-06-09 | 2014-12-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for producing a protective structure |
DE102011104305A1 (en) | 2011-06-16 | 2012-12-20 | Austriamicrosystems Ag | Production method for a semiconductor component with a conductor layer in the semiconductor body and semiconductor component |
US8525168B2 (en) * | 2011-07-11 | 2013-09-03 | International Business Machines Corporation | Integrated circuit (IC) test probe |
US8742591B2 (en) | 2011-12-21 | 2014-06-03 | Stats Chippac, Ltd. | Semiconductor device and method of forming insulating layer in notches around conductive TSV for stress relief |
US8757897B2 (en) | 2012-01-10 | 2014-06-24 | Invensas Corporation | Optical interposer |
US9323010B2 (en) | 2012-01-10 | 2016-04-26 | Invensas Corporation | Structures formed using monocrystalline silicon and/or other materials for optical and other applications |
JP5880283B2 (en) * | 2012-05-29 | 2016-03-08 | 富士通セミコンダクター株式会社 | Manufacturing method of semiconductor device |
US8940637B2 (en) * | 2012-07-05 | 2015-01-27 | Globalfoundries Singapore Pte. Ltd. | Method for forming through silicon via with wafer backside protection |
EP2688092A1 (en) * | 2012-07-19 | 2014-01-22 | Ipdia | Semiconductor die with a through silicon via and corresponding manufacturing process |
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US20150050792A1 (en) * | 2013-08-13 | 2015-02-19 | Globalfoundries Inc. | Extra narrow diffusion break for 3d finfet technologies |
JP6286169B2 (en) * | 2013-09-26 | 2018-02-28 | 新光電気工業株式会社 | Wiring board and manufacturing method thereof |
US9412806B2 (en) | 2014-06-13 | 2016-08-09 | Invensas Corporation | Making multilayer 3D capacitors using arrays of upstanding rods or ridges |
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US9748106B2 (en) * | 2016-01-21 | 2017-08-29 | Micron Technology, Inc. | Method for fabricating semiconductor package |
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JP7160594B2 (en) * | 2018-08-09 | 2022-10-25 | 太陽誘電株式会社 | Capacitor |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5229647A (en) * | 1991-03-27 | 1993-07-20 | Micron Technology, Inc. | High density data storage using stacked wafers |
US5270261A (en) * | 1991-09-13 | 1993-12-14 | International Business Machines Corporation | Three dimensional multichip package methods of fabrication |
US5528080A (en) * | 1993-03-05 | 1996-06-18 | Goldstein; Edward F. | Electrically conductive interconnection through a body of semiconductor material |
US6002177A (en) * | 1995-12-27 | 1999-12-14 | International Business Machines Corporation | High density integrated circuit packaging with chip stacking and via interconnections |
US6104043A (en) * | 1997-01-20 | 2000-08-15 | Abb Research Ltd. | Schottky diode of SiC and a method for production thereof |
US6122187A (en) * | 1998-11-23 | 2000-09-19 | Micron Technology, Inc. | Stacked integrated circuits |
US6184060B1 (en) * | 1996-10-29 | 2001-02-06 | Trusi Technologies Llc | Integrated circuits and methods for their fabrication |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL131898C (en) * | 1965-03-26 | |||
US3508980A (en) * | 1967-07-26 | 1970-04-28 | Motorola Inc | Method of fabricating an integrated circuit structure with dielectric isolation |
JPS5120267B2 (en) * | 1972-05-13 | 1976-06-23 | ||
US4353082A (en) * | 1977-07-29 | 1982-10-05 | Texas Instruments Incorporated | Buried sense line V-groove MOS random access memory |
US4580331A (en) * | 1981-07-01 | 1986-04-08 | Rockwell International Corporation | PNP-type lateral transistor with minimal substrate operation interference and method for producing same |
US4694561A (en) * | 1984-11-30 | 1987-09-22 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method of making high-performance trench capacitors for DRAM cells |
US4581814A (en) * | 1984-12-13 | 1986-04-15 | At&T Bell Laboratories | Process for fabricating dielectrically isolated devices utilizing heating of the polycrystalline support layer to prevent substrate deformation |
JPS6269520A (en) * | 1985-09-21 | 1987-03-30 | Semiconductor Energy Lab Co Ltd | Recess filling method by photo-cvd |
US4810669A (en) * | 1987-07-07 | 1989-03-07 | Oki Electric Industry Co., Ltd. | Method of fabricating a semiconductor device |
US5016068A (en) * | 1988-04-15 | 1991-05-14 | Texas Instruments Incorporated | Vertical floating-gate transistor |
US5246877A (en) * | 1989-01-31 | 1993-09-21 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a semiconductor device having a polycrystalline electrode region |
US5094972A (en) * | 1990-06-14 | 1992-03-10 | National Semiconductor Corp. | Means of planarizing integrated circuits with fully recessed isolation dielectric |
JP3146316B2 (en) | 1991-05-17 | 2001-03-12 | 日本テキサス・インスツルメンツ株式会社 | Semiconductor device and manufacturing method thereof |
US5317432A (en) * | 1991-09-04 | 1994-05-31 | Sony Corporation | Liquid crystal display device with a capacitor and a thin film transistor in a trench for each pixel |
US5332469A (en) * | 1992-11-12 | 1994-07-26 | Ford Motor Company | Capacitive surface micromachined differential pressure sensor |
US5484745A (en) * | 1993-10-26 | 1996-01-16 | Yazaki Meter Co., Ltd. | Method for forming a semiconductor sensor |
US5385861A (en) * | 1994-03-15 | 1995-01-31 | National Semiconductor Corporation | Planarized trench and field oxide and poly isolation scheme |
JPH08201432A (en) * | 1995-01-25 | 1996-08-09 | Matsushita Electric Ind Co Ltd | Probe sheet and its manufacture |
US5854501A (en) * | 1995-11-20 | 1998-12-29 | Micron Technology, Inc. | Floating gate semiconductor device having a portion formed with a recess |
US5747358A (en) * | 1996-05-29 | 1998-05-05 | W. L. Gore & Associates, Inc. | Method of forming raised metallic contacts on electrical circuits |
US6016012A (en) * | 1996-11-05 | 2000-01-18 | Cypress Semiconductor Corporation | Thin liner layer providing reduced via resistance |
US5910687A (en) | 1997-01-24 | 1999-06-08 | Chipscale, Inc. | Wafer fabrication of die-bottom contacts for electronic devices |
US5949030A (en) * | 1997-11-14 | 1999-09-07 | International Business Machines Corporation | Vias and method for making the same in organic board and chip carriers |
US6027956A (en) * | 1998-02-05 | 2000-02-22 | Integration Associates, Inc. | Process for producing planar dielectrically isolated high speed pin photodiode |
US6322903B1 (en) | 1999-12-06 | 2001-11-27 | Tru-Si Technologies, Inc. | Package of integrated circuits and vertical integration |
JP3991300B2 (en) * | 2000-04-28 | 2007-10-17 | 株式会社Sumco | Manufacturing method of bonded dielectric isolation wafer |
US6500717B2 (en) * | 2000-12-01 | 2002-12-31 | Agere Systems Inc. | Method for making an integrated circuit device with dielectrically isolated tubs and related circuit |
US20030082847A1 (en) * | 2001-10-26 | 2003-05-01 | I-Fire Technologies, Inc. | Method and apparatus for wafer thinning |
US6794272B2 (en) * | 2001-10-26 | 2004-09-21 | Ifire Technologies, Inc. | Wafer thinning using magnetic mirror plasma |
US6677235B1 (en) * | 2001-12-03 | 2004-01-13 | National Semiconductor Corporation | Silicon die with metal feed through structure |
US6642081B1 (en) * | 2002-04-11 | 2003-11-04 | Robert Patti | Interlocking conductor method for bonding wafers to produce stacked integrated circuits |
JP2004228392A (en) * | 2003-01-24 | 2004-08-12 | Seiko Epson Corp | Manufacturing method of semiconductor device and manufacturing method of semiconductor module |
JP3990347B2 (en) * | 2003-12-04 | 2007-10-10 | ローム株式会社 | Semiconductor chip, manufacturing method thereof, and semiconductor device |
-
2001
- 2001-02-22 US US09/792,311 patent/US6498381B2/en not_active Expired - Lifetime
- 2001-08-28 US US09/941,447 patent/US6844241B2/en not_active Expired - Lifetime
-
2002
- 2002-02-20 AU AU2002311762A patent/AU2002311762A1/en not_active Abandoned
- 2002-02-20 KR KR10-2003-7010999A patent/KR100509898B1/en not_active IP Right Cessation
- 2002-02-20 WO PCT/US2002/005371 patent/WO2002078087A2/en active IP Right Grant
- 2002-02-20 JP JP2002576018A patent/JP4063078B2/en not_active Expired - Fee Related
- 2002-02-20 EP EP02739087A patent/EP1386355A2/en not_active Withdrawn
-
2004
- 2004-12-16 US US11/014,464 patent/US7001825B2/en not_active Expired - Lifetime
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5229647A (en) * | 1991-03-27 | 1993-07-20 | Micron Technology, Inc. | High density data storage using stacked wafers |
US5270261A (en) * | 1991-09-13 | 1993-12-14 | International Business Machines Corporation | Three dimensional multichip package methods of fabrication |
US5528080A (en) * | 1993-03-05 | 1996-06-18 | Goldstein; Edward F. | Electrically conductive interconnection through a body of semiconductor material |
US6002177A (en) * | 1995-12-27 | 1999-12-14 | International Business Machines Corporation | High density integrated circuit packaging with chip stacking and via interconnections |
US6184060B1 (en) * | 1996-10-29 | 2001-02-06 | Trusi Technologies Llc | Integrated circuits and methods for their fabrication |
US6104043A (en) * | 1997-01-20 | 2000-08-15 | Abb Research Ltd. | Schottky diode of SiC and a method for production thereof |
US6122187A (en) * | 1998-11-23 | 2000-09-19 | Micron Technology, Inc. | Stacked integrated circuits |
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US6498381B2 (en) | 2002-12-24 |
US20020115260A1 (en) | 2002-08-22 |
US7001825B2 (en) | 2006-02-21 |
KR20030086594A (en) | 2003-11-10 |
JP2004526321A (en) | 2004-08-26 |
US20050106845A1 (en) | 2005-05-19 |
KR100509898B1 (en) | 2005-08-25 |
EP1386355A2 (en) | 2004-02-04 |
JP4063078B2 (en) | 2008-03-19 |
US20020115290A1 (en) | 2002-08-22 |
US6844241B2 (en) | 2005-01-18 |
AU2002311762A1 (en) | 2002-10-08 |
WO2002078087A2 (en) | 2002-10-03 |
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