WO2002075808A3 - Self-aligned mram contact and method of fabrication - Google Patents

Self-aligned mram contact and method of fabrication Download PDF

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Publication number
WO2002075808A3
WO2002075808A3 PCT/US2002/007285 US0207285W WO02075808A3 WO 2002075808 A3 WO2002075808 A3 WO 2002075808A3 US 0207285 W US0207285 W US 0207285W WO 02075808 A3 WO02075808 A3 WO 02075808A3
Authority
WO
WIPO (PCT)
Prior art keywords
self
conductive material
mram
fabrication
aligned
Prior art date
Application number
PCT/US2002/007285
Other languages
French (fr)
Other versions
WO2002075808A2 (en
Inventor
Roger Lee
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to AU2002306683A priority Critical patent/AU2002306683A1/en
Priority to PCT/US2002/007285 priority patent/WO2002075808A2/en
Publication of WO2002075808A2 publication Critical patent/WO2002075808A2/en
Publication of WO2002075808A3 publication Critical patent/WO2002075808A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment

Abstract

A method of forming self-aligned MRAM contact is disclosed. MRAM stacks including an upper of a conductive material are formed over portions of integraed circuitry. An insulating material is formed over the substrate, including the MRAM stacks with the upper layer of conductive material. The insulating material is subsequently chemically mechanically polished or etched, stopping on the upper layer of conductive material, to expose of the conductive material which are used to self-alinged MRAM contacts.
PCT/US2002/007285 2001-03-15 2002-03-12 Self-aligned mram contact and method of fabrication WO2002075808A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2002306683A AU2002306683A1 (en) 2001-03-15 2002-03-12 Self-aligned mram contact and method of fabrication
PCT/US2002/007285 WO2002075808A2 (en) 2001-03-15 2002-03-12 Self-aligned mram contact and method of fabrication

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/805,915 2001-03-15
US80591501 2001-03-15
PCT/US2002/007285 WO2002075808A2 (en) 2001-03-15 2002-03-12 Self-aligned mram contact and method of fabrication

Publications (2)

Publication Number Publication Date
WO2002075808A2 WO2002075808A2 (en) 2002-09-26
WO2002075808A3 true WO2002075808A3 (en) 2004-02-12

Family

ID=53015433

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/007285 WO2002075808A2 (en) 2001-03-15 2002-03-12 Self-aligned mram contact and method of fabrication

Country Status (2)

Country Link
AU (1) AU2002306683A1 (en)
WO (1) WO2002075808A2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5841692A (en) * 1996-03-18 1998-11-24 International Business Machines Corporation Magnetic tunnel junction device with antiferromagnetically coupled pinned layer
EP1054449A2 (en) * 1999-05-17 2000-11-22 Motorola, Inc. Magnetic random access memory and fabricating method thereof
US6153443A (en) * 1998-12-21 2000-11-28 Motorola, Inc. Method of fabricating a magnetic random access memory

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5841692A (en) * 1996-03-18 1998-11-24 International Business Machines Corporation Magnetic tunnel junction device with antiferromagnetically coupled pinned layer
US6153443A (en) * 1998-12-21 2000-11-28 Motorola, Inc. Method of fabricating a magnetic random access memory
EP1054449A2 (en) * 1999-05-17 2000-11-22 Motorola, Inc. Magnetic random access memory and fabricating method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
HU Y Z ET AL: "Chemical-mechanical polishing as an enabling technology for giant magnetoresistance devices", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 308-309, no. 1-4, 31 October 1997 (1997-10-31), pages 555 - 561, XP004110335, ISSN: 0040-6090 *

Also Published As

Publication number Publication date
WO2002075808A2 (en) 2002-09-26
AU2002306683A1 (en) 2002-10-03

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