WO2002075264A1 - Temperature measuring method and apparatus and semiconductor heat treatment apparatus - Google Patents

Temperature measuring method and apparatus and semiconductor heat treatment apparatus Download PDF

Info

Publication number
WO2002075264A1
WO2002075264A1 PCT/JP2002/002032 JP0202032W WO02075264A1 WO 2002075264 A1 WO2002075264 A1 WO 2002075264A1 JP 0202032 W JP0202032 W JP 0202032W WO 02075264 A1 WO02075264 A1 WO 02075264A1
Authority
WO
WIPO (PCT)
Prior art keywords
temperature
measuring
state variable
measuring object
radiation light
Prior art date
Application number
PCT/JP2002/002032
Other languages
French (fr)
Inventor
Tomohiro Suzuki
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Publication of WO2002075264A1 publication Critical patent/WO2002075264A1/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a temperature measurement technique using a radiation thermometer and, more particularly, to a temperature measuring method and apparatus for measuring a temperature of a measuring object by a non-contact method.
  • thermocouple In a heat treatment of a semiconductor wafer and the like, it is necessary to accurately measure a temperature of the heated semiconductor wafer.
  • a temperature measuring apparatus using a contact method such as a thermocouple cannot be used for measuring a temperature of a semiconductor wafer on which semiconductor circuits are actually formed. Therefore, in a heat treatment apparatus for semiconductor wafers, a radiation thermometer is normally used to measure a temperature of a semiconductor wafer.
  • a radiation thermometer measures an intensity of an infrared light radiated from a surface of a measuring object, and estimates the temperature of the measuring object from the measured intensity.
  • An intensity of infrared light emitted from a semiconductor wafer changes with the emissivity of the radiation surface of the semiconductor wafer.
  • an oxide film is formed on the radiation surface of the semiconductor wafer, and such an oxide film has an emissivity different from the emissivity of the surface of the semiconductor wafer at an initial stage of heating.
  • the above-mentioned temperature measuring method for a radiation thermometer has a problem in that a structure of the measuring apparatus is complicated and a manufacturing cost of the measuring apparatus is high. Moreover, there is a problem that the accuracy of the measured temperature cannot be high since reproducibility is low due to changes in the environment near the temperature measuring point and changes in the measurement system with passage of time, etc.
  • the above-mentioned approach 1) which irradiates a reference light having a predetermined intensity onto a " measuring object, requires an accurate control of a wavelength and an intensity of the reference light, but an apparatus for irradiating such an accurate reference light is expensive.
  • the approach 3) which forms a multiple reflection structure with a measuring object, requires multiple reflection between a body having a reflectance equal to 1 and the measuring object, there is not such a body having a reflectance equal to 1 in practice. Accordingly, calculation must be carried out by assuming a body having a reflectance not equal to 1 as a body having a reflectance equal to 1 , which causes an inevitable error being included in a temperature obtained by the calculation.
  • a more specific object of the present invention is to provide a temperature measuring method and apparatus that can accurately measure a temperature of a measuring object according to a non-contact manner without using a complicated hardware structure, and to provide a semiconductor heat treatment apparatus using such a temperature measuring method.
  • a temperature measuring method for measuring a temperature of a measuring object according to a non- contact manner, comprising the steps of: measuring a radiation light radiated from the measuring object; obtaining a state variable according to estimate algorithm calculation based on a result of measurement of the radiation light, the state variable including an effective emissivity as an unknown variable; and calculating the temperature of the measuring object based on the calculated state variable.
  • the step of obtaining the state variable may include a step of inputting an energy value used for heating the measuring object so as to calculate the state variable based on a heat balance model having an input as the energy value and an output as the result of measurement of the radiation light, the state variable further including the temperature of the measuring object as an unknown variable.
  • the estimate algorithm calculation may be an extended Kalman filter algorithm obtained by extending a Kalman filter into a nonlinear system.
  • a temperature measuring apparatus for measuring a temperature of a measuring object according to a non-contact manner, comprising: measuring means for measuring a radiation light radiated from the measuring object; state value obtaining means for obtaining a state variable according to estimate algorithm- calculation based on a result of measurement of the radiation light, the state variable including an effective emissivity as an unknown variable; and temperature calculating means for calculating the temperature of the measuring object based on the calculated state variable.
  • said state value obtaining means may include inputting means for inputting an energy value used for heating the measuring object so as to calculate the state variable based on a heat balance model having an input as the energy value and an output as the result of measurement of the radiation light, the state variable further including the temperature of the measuring object as an unknown variable.
  • the estimate algorithm calculation may be an extended Kalman filter algorithm obtained by extending a Kalman filter into a nonlinear system.
  • a semiconductor heat treatment apparatus for applying a heat treatment to a semiconductor substrate, comprising; heating means for heating the semiconductor substrate; a radiation thermometer for measuring a temperature of the semiconductor substrate, the radiation thermometer comprising measuring means for measuring a radiation light radiated from the heated semiconductor substrate, state variable obtaining means for obtaining a state variable according to estimate algorithm calculation based on a result of measurement of the radiation light, the state variable including an effective emissivity as an unknown variable, and temperature calculating means for calculating the temperature of the measuring object based on the calculated state variable; and control means for controlling the energy supplied to said heating means based on the temperature calculated by said temperature calculating means .
  • said state variable obtaining means may include inputting means for inputting an energy value used for heating the measuring object so as to calculate the state variable based on a heat balance model having an input as the energy value and an output as the result of measurement of the radiation light, the state variable further including the temperature of the measuring object as an unknown variable.
  • the estimate algorithm calculation may be an extended Kalman filter algorithm obtained by extending a Kalman filter into a nonlinear system.
  • a temperature of the measuring object is obtained by estimating an effective emissivity by calculation, and, therefore, there is no need to take an actual measurement of the effective emissivity. That is, the temperature of the measuring object can be obtained by merely measuring an intensity of radiation of the measuring object. For this reason, a hardware structure for measuring an effective emissivity is unnecessary, and a corresponding manufacturing cost can be reduced.
  • An estimation of the effective emissivity and a calculation of the temperature of the measuring object are carried out in accordance with the estimation algorithm calculation of a state variable including the effective emissivity and the temperature of the measuring object as unknown variables based on a heat balance model .
  • Such an algorithm can be easily established.
  • calculation means can be easily attained by performing the estimation algorithm with an extended Kalman filter.
  • FIG. 1 is a cross-sectional view of a semiconductor heat treatment apparatus according to an embodiment of the present invention
  • FIG. 2 is a functional block diagram of a radiation thermometer shown in FIG. 1 ;
  • FIG. 3 is a schematic diagram of a heat balance model used as a base of a calculation performed by the radiation thermometer.
  • FIG. 4 is a block diagram showing a process of estimating a temperature and an effective emissivity of a semiconductor wafer.
  • FIG. 1 is a cross-sectional view of the semiconductor heat treatment apparatus according to the embodiment of the present invention.
  • the heat treatment apparatus shown in FIG. 1 is a rapid thermal processing (RTP) apparatus that applies a rapid thermal process to a semiconductor wafer placed in an RTP chamber.
  • RTP rapid thermal processing
  • the heat treatment apparatus 1 shown in FIG. 1 is an apparatus that applies a heat treatment to a semiconductor wafer 3 by carrying out rapid heating of the semiconductor wafer 3 with a heat ray from halogen lamps 2 at 1000 °C.
  • the halogen lamps 2 are attached to a halogen lamp house 4.
  • the halogen lamp house 4 is provided with an electric-power adjustment circuit (not shown) that attach adjusts an electric power supplied to the halogen lamp 2.
  • the semiconductor wafer 3 is accommodated in a chamber 5, and is subjected to a heat treatment.
  • a quartz support ring 6 is arranged inside the chamber 5, and a guard ring 7 is attached on the quartz support ring 6.
  • the semiconductor wafer 3 is placed on the guard ring 6 in a state in which a peripheral part of the semiconductor wafer 3 is supported by the guard ring 6. Therefore, a back surface of the semiconductor wafer 3 other than the peripheral part faces a bottom plate 8 with a small gap therebetween.
  • the bottom plate 8 is formed of a material having a high reflectance so as to reflect a radiation light from the heated semiconductor wafer 3 and return the radiation light to the semiconductor wafer 3 so that the semiconductor wafer 3 is heated efficiently.
  • a quartz rod 11 connected to a radiation thermometer 10 through an optical fiber 9 is embedded in a predetermined position of the bottom plate 8.
  • the quartz rod 11 receives a radiation light from the semiconductor wafer 3 , and the radiation light received by the quartz rod 11 is supplied to the radiation thermometer 10 through the optical fiber 9.
  • the radiation thermometer 10 measures an intensity of the radiation light of the semiconductor wafer 3 in accordance with the radiation light supplied through the optical fiber 9 , and obtains a temperature of the semiconductor wafer 3 by calculation based on a result of the measurement. That is, the radiation thermometer 10 calculates the temperature of the semiconductor wafer 3 based on the result of measurement of the radiation light of the semiconductor wafer 3.
  • the radiation thermometer 10 supplies the temperature of the semiconductor wafer 3 obtained by the calculation to a control unit 13 via a connection line 12.
  • the control unit 13 serves as control means for controlling an operation of the heat treatment apparatus 1 , and is connected to the electric-power adjustment circuit provided in the halogen lamp house 4.
  • the electric-power adjustment circuit controls an electric power supplied to the halogen lamp 2 according to a control signal from the control unit 13. Thereby, heating of the semiconductor wafer 3 by the halogen lamps 2 is controlled, and the semiconductor wafer 3 is heated or maintained at a predetermined temperature .
  • FIG. 2 is a functional block diagram of the radiation thermometer 10 shown in FIG. 1.
  • the radiation thermometer 10 has a radiation light measuring part 20 and a calculating part 22.
  • the optical fiber 9 is connected to the radiation light measuring part 20, and the radiation light from the semiconductor wafer 3 is supplied to radiation light measuring part 20 through the optical fiber 9.
  • the radiation light measuring part 20 measures . various items containing an intensity of the radiation light supplied through the optical fiber 9, and supplies the result of measurement to the calculating part 22.
  • the calculating part 22 obtains the temperature of the semiconductor wafer 3 by calculation based on the result of measurement supplied from the radiation light measuring part 20.
  • the temperature of the semiconductor wafer 3 is supplied to the control part 13 through the connection line 12.
  • the value of the electric power to be supplied to the lamps 2 is supplied from the control part 13 to the calculating part 22 through the connection line 12.
  • the temperature estimating method is performed based on an apparatus model with respect to heat balance of the semiconductor wafer 3 as a measuring object.
  • FIG. 3 is a schematic diagram of a heat balance model used as a base of the calculation performed by the calculating part 22 of the radiation thermometer 10.
  • ⁇ is a discrete time interval.
  • ⁇ Q * A l ⁇ -( ⁇ i ⁇ 1 + ⁇ 2 ) ⁇ T?(t)
  • the subscript i indicates the i-th element of the semiconductor wafer 3 when the semiconductor wafer 3 is divided into a plurality of concentric rings, and Ai represents an area of the i-th element.
  • ki and k 2 represent coefficients relate to heat transfer, and ⁇ is a Stefan-Boltzmann constant. Additionally, ⁇ x represents an emissivity of the reflector 4a of the halogen lamp house 4, and ⁇ 2 represents an emissivity of the surface of the bottom surface 8, which faces the semiconductor wafer 3.
  • ⁇ i is an effective emissivity in consideration of the multiple reflection of the surface of the simiconductor wafer 3, which faces the lamps 2
  • ⁇ 2 is an effective emissivity in consideration of the multiple reflection of the surface of the semiconductor wafer 3, which faces the bottom plate 8.
  • u is an input (for example, a current supplied to the lamp) to a halogen lamp, and an energy of the radiation light travels from the halogen lamp 2 to the semiconductor wafer 3 is represented by a function g(u) .
  • the first term in equation (1) expresses a heat which escapes by radiation from both the front and back sides of the semiconductor wafer, the second term expresses an amount of heat transferred between the element i-1 and the element i+1 , and the third term expresses an amount of heat input from a halogen lamp.
  • a temperature of the i-th element is represented by the following equation (2) , where Mci is a heat capacity of the i-th element.
  • Ti(t+1) Ti(t)+ ⁇ Q/MCi (2)
  • the intensity of the radiation light measured by the radiation thermometer is expressed by the following equation (3) using the Planck's law, where h is a Planck's constant, c is a velocity of light, k B is a Boltzmann constant and ⁇ is a measured wave length.
  • the extended Kalman filter which calculates a temperature of a semiconductor wafer while estimating an effective emissivity, can be designed by setting effective emissivities ⁇ i and ⁇ 2 of the front and back sides of the semiconductor wafer as unknown values and setting the temperature of the semiconductor wafer as a state variable.
  • FIG. 4 is a block diagram showing a process of estimating the effective emissivity and the temperature of the semiconductor wafer in practice.
  • the Kalman .filter is an on-line data algorithm which gives sequentially a least squares estimate value of a state of a system in accordance with 1) a dynamic characteristic of a system producing a signal, 2) a statistical characteristic of noise, and 3) priori information with respect to an initial value and observation data given according to passage of ime.
  • a difference equation of a linear system can be expressed by the following equation (4) using an input u , an output y, and a state x .
  • Kt is a value referred to as a Kalman gain.
  • the Kalman filter is designed based on a linear system like a formula (4) .
  • An extended Kalman filter is linearized near an operating point so as to extend the Kalman filter to a non-linear system. That is, the Kalman filter can be designed for a system having a known operating characteristic. However, when an unknown constant is contained, the unknown value is reselected as a variable so as to establish a difference equation of the system, and, thereby, an adaptive filter using the algorithm of the extended Kalman filter can be designed.
  • a state variable x in the difference equation (7) of the system is substituted by z as represented by equation (8) so as to obtain equation (9) .
  • the state value x (e.g., a temperature of the semiconductor wafer) can be obtained by calculation while estimating the unknown value ⁇ by applying equation (9) to the algorithm of an extended Kalman filter.
  • coefficients A, B and C in the above-mentioned formula (4) are determined based on comparison of results of various experiments using a blackbody furnace .
  • a temperature of the semiconductor wafer 3 can be obtained while estimating an emissivity of the semiconductor wafer 3, by using an extended Kalman filter for the calculating part 22 of the radiation thermometer 10.
  • thermometer When a temperature of a bare wafer, which was heated to about 600°C at a heating rate of 10 °C/sec, was measured using the radiation thermometer according to the present embodiment, an error with respect to a temperature measured by a thermocouple was about ⁇ 10°C.
  • the radiation thermometer according to the present embodiment can obtain a temperature very close to an actual temperature, by merely measuring an intensity of a radiation light. For this reason, a hardware structure of the radiation thermometer is simplified, and the radiation thermometer can be manufactured at a cost of about 1/4 of a manufacturing cost of the conventional radiation thermometer that actually measures an emissivity.

Abstract

ABSTRACT A radiation thermometer measures a temperature of a semiconductor wafer according to a non-contact manner without using a complicated hardware structure. A state variable is obtained according to estimate algorithm calculation based on a result of measurement of a radiation light from the semiconductor wafer. The state variable includes an effective emissivity as an unknown variable. The temperature of the semiconductor wafer is calculated based on the calculated state variable.

Description

DESCRIPTION
TEMPERATURE MEASURING METHOD AND APPARATUS AND SEMICONDUCTOR HEAT TREATMENT APPARATUS
TECHNICAL FIELD
The present invention relates to a temperature measurement technique using a radiation thermometer and, more particularly, to a temperature measuring method and apparatus for measuring a temperature of a measuring object by a non-contact method.
BACKGROUND ART
In a heat treatment of a semiconductor wafer and the like, it is necessary to accurately measure a temperature of the heated semiconductor wafer. A temperature measuring apparatus using a contact method such as a thermocouple cannot be used for measuring a temperature of a semiconductor wafer on which semiconductor circuits are actually formed. Therefore, in a heat treatment apparatus for semiconductor wafers, a radiation thermometer is normally used to measure a temperature of a semiconductor wafer.
A radiation thermometer measures an intensity of an infrared light radiated from a surface of a measuring object, and estimates the temperature of the measuring object from the measured intensity. An intensity of infrared light emitted from a semiconductor wafer changes with the emissivity of the radiation surface of the semiconductor wafer. For example, an oxide film is formed on the radiation surface of the semiconductor wafer, and such an oxide film has an emissivity different from the emissivity of the surface of the semiconductor wafer at an initial stage of heating.
Therefore, a measuring method which is independent of emissivity of a radiation surface and a measuring method which corrects emissivity have been suggested, as mentioned below.
1) Irradiate a reference light having a predetermined intensity onto a measuring object (semiconductor wafer) , and measure an intensity of the reference light reflected by the measuring object so as to obtain an actual emissivity. That is, an actual emissivity is obtained according to the relationship (emissivity = reflection factor - 1) so as to obtain a temperature of the measuring object using the thus- obtained emissivity. 2) Establish more than two states of effective emissivity, and obtain an emissivity by calculating a solution of simultaneous equations containing the emissivity representing different states. A temperature of a measuring object can be obtained by calculation using the thus-obtained emissivity. United States Patent No. 5,660,472 discloses this approach.
3) Form a multiple reflection structure with a measuring object so as to bring an effective emissivity close to 1. For example, a semiconductor wafer as a measuring object is arranged so that a light radiated from the semiconductor wafer is reflected between the semiconductor wafer and a placement stage multiple times , and obtain a temperature of the measuring object by calculation based on an intensity of the multiple- reflected radiation light. Namely, temperature is calculated by assuming a measuring object as a pseudo blackboby (emissivity = 1) . Examples of this approach are disclosed in United States Patents No. 6,174,080 and No. 6,293,696.
The above-mentioned temperature measuring method for a radiation thermometer has a problem in that a structure of the measuring apparatus is complicated and a manufacturing cost of the measuring apparatus is high. Moreover, there is a problem that the accuracy of the measured temperature cannot be high since reproducibility is low due to changes in the environment near the temperature measuring point and changes in the measurement system with passage of time, etc.
For example, the above-mentioned approach 1) , which irradiates a reference light having a predetermined intensity onto a "measuring object, requires an accurate control of a wavelength and an intensity of the reference light, but an apparatus for irradiating such an accurate reference light is expensive.
Additionally, although the above-mentioned approach 2) , which establishes more than two states of effective emissivity, can achieve a predetermined state of effective emissivity by maintaining an environment near the temperature measuring point, it is difficult to maintain the environment near the temperature measuring point always unchanged. Moreover, if there is a change in the measurement system with passage of time, it is difficult to maintain an accurate temperature measurement due to an influence of the change with passage of time.
Further, although the approach 3) , which forms a multiple reflection structure with a measuring object, requires multiple reflection between a body having a reflectance equal to 1 and the measuring object, there is not such a body having a reflectance equal to 1 in practice. Accordingly, calculation must be carried out by assuming a body having a reflectance not equal to 1 as a body having a reflectance equal to 1 , which causes an inevitable error being included in a temperature obtained by the calculation.
DISCLOSURE OF INVENTION
It is an object of the present invention to provide an improved and useful temperature measuring method and apparatus in which the above-mentioned problems are eliminated. A more specific object of the present invention is to provide a temperature measuring method and apparatus that can accurately measure a temperature of a measuring object according to a non-contact manner without using a complicated hardware structure, and to provide a semiconductor heat treatment apparatus using such a temperature measuring method.
In order to achieve the above-mentioned objects, there is provided according to one aspect of the present invention a temperature measuring method for measuring a temperature of a measuring object according to a non- contact manner, comprising the steps of: measuring a radiation light radiated from the measuring object; obtaining a state variable according to estimate algorithm calculation based on a result of measurement of the radiation light, the state variable including an effective emissivity as an unknown variable; and calculating the temperature of the measuring object based on the calculated state variable.
In the temperature measuring method according to the present invention, the step of obtaining the state variable may include a step of inputting an energy value used for heating the measuring object so as to calculate the state variable based on a heat balance model having an input as the energy value and an output as the result of measurement of the radiation light, the state variable further including the temperature of the measuring object as an unknown variable. The estimate algorithm calculation may be an extended Kalman filter algorithm obtained by extending a Kalman filter into a nonlinear system.
Additionally, there is provided according to another aspect of the present invention a temperature measuring apparatus for measuring a temperature of a measuring object according to a non-contact manner, comprising: measuring means for measuring a radiation light radiated from the measuring object; state value obtaining means for obtaining a state variable according to estimate algorithm- calculation based on a result of measurement of the radiation light, the state variable including an effective emissivity as an unknown variable; and temperature calculating means for calculating the temperature of the measuring object based on the calculated state variable.
In the temperature measuring apparatus according to the present invention, said state value obtaining means may include inputting means for inputting an energy value used for heating the measuring object so as to calculate the state variable based on a heat balance model having an input as the energy value and an output as the result of measurement of the radiation light, the state variable further including the temperature of the measuring object as an unknown variable. The estimate algorithm calculation may be an extended Kalman filter algorithm obtained by extending a Kalman filter into a nonlinear system.
Further, there is provided according to another aspect of the present invention a semiconductor heat treatment apparatus for applying a heat treatment to a semiconductor substrate, comprising; heating means for heating the semiconductor substrate; a radiation thermometer for measuring a temperature of the semiconductor substrate, the radiation thermometer comprising measuring means for measuring a radiation light radiated from the heated semiconductor substrate, state variable obtaining means for obtaining a state variable according to estimate algorithm calculation based on a result of measurement of the radiation light, the state variable including an effective emissivity as an unknown variable, and temperature calculating means for calculating the temperature of the measuring object based on the calculated state variable; and control means for controlling the energy supplied to said heating means based on the temperature calculated by said temperature calculating means .
In the semiconductor heat treatment apparatus according to the present invention, said state variable obtaining means may include inputting means for inputting an energy value used for heating the measuring object so as to calculate the state variable based on a heat balance model having an input as the energy value and an output as the result of measurement of the radiation light, the state variable further including the temperature of the measuring object as an unknown variable. The estimate algorithm calculation may be an extended Kalman filter algorithm obtained by extending a Kalman filter into a nonlinear system.
According to the above-mentioned invention, a temperature of the measuring object is obtained by estimating an effective emissivity by calculation, and, therefore, there is no need to take an actual measurement of the effective emissivity. That is, the temperature of the measuring object can be obtained by merely measuring an intensity of radiation of the measuring object. For this reason, a hardware structure for measuring an effective emissivity is unnecessary, and a corresponding manufacturing cost can be reduced.
An estimation of the effective emissivity and a calculation of the temperature of the measuring object are carried out in accordance with the estimation algorithm calculation of a state variable including the effective emissivity and the temperature of the measuring object as unknown variables based on a heat balance model . Such an algorithm can be easily established. Moreover, calculation means can be easily attained by performing the estimation algorithm with an extended Kalman filter.
Other objects , features and advantages of the present invention will become more apparent from the following detailed description when read in conjunction with the accompanying drawings.
BRIEF DESCRIPTION OF DRAWINGS
FIG. 1 is a cross-sectional view of a semiconductor heat treatment apparatus according to an embodiment of the present invention;
FIG. 2 is a functional block diagram of a radiation thermometer shown in FIG. 1 ;
FIG. 3 is a schematic diagram of a heat balance model used as a base of a calculation performed by the radiation thermometer; and
FIG. 4 is a block diagram showing a process of estimating a temperature and an effective emissivity of a semiconductor wafer. BEST MODE FOR CARRYING OUT THE INVENTION
A description will now be given, with reference to FIG. 1, of a semiconductor heat treatment apparatus according to an embodiment of the present invention. FIG. 1 is a cross-sectional view of the semiconductor heat treatment apparatus according to the embodiment of the present invention. The heat treatment apparatus shown in FIG. 1 is a rapid thermal processing (RTP) apparatus that applies a rapid thermal process to a semiconductor wafer placed in an RTP chamber.
The heat treatment apparatus 1 shown in FIG. 1 is an apparatus that applies a heat treatment to a semiconductor wafer 3 by carrying out rapid heating of the semiconductor wafer 3 with a heat ray from halogen lamps 2 at 1000 °C. The halogen lamps 2 are attached to a halogen lamp house 4. The halogen lamp house 4 is provided with an electric-power adjustment circuit (not shown) that attach adjusts an electric power supplied to the halogen lamp 2.
The semiconductor wafer 3 is accommodated in a chamber 5, and is subjected to a heat treatment. A quartz support ring 6 is arranged inside the chamber 5, and a guard ring 7 is attached on the quartz support ring 6. The semiconductor wafer 3 is placed on the guard ring 6 in a state in which a peripheral part of the semiconductor wafer 3 is supported by the guard ring 6. Therefore, a back surface of the semiconductor wafer 3 other than the peripheral part faces a bottom plate 8 with a small gap therebetween.
The bottom plate 8 is formed of a material having a high reflectance so as to reflect a radiation light from the heated semiconductor wafer 3 and return the radiation light to the semiconductor wafer 3 so that the semiconductor wafer 3 is heated efficiently. A quartz rod 11 connected to a radiation thermometer 10 through an optical fiber 9 is embedded in a predetermined position of the bottom plate 8. The quartz rod 11 receives a radiation light from the semiconductor wafer 3 , and the radiation light received by the quartz rod 11 is supplied to the radiation thermometer 10 through the optical fiber 9. The radiation thermometer 10 measures an intensity of the radiation light of the semiconductor wafer 3 in accordance with the radiation light supplied through the optical fiber 9 , and obtains a temperature of the semiconductor wafer 3 by calculation based on a result of the measurement. That is, the radiation thermometer 10 calculates the temperature of the semiconductor wafer 3 based on the result of measurement of the radiation light of the semiconductor wafer 3.
The radiation thermometer 10 supplies the temperature of the semiconductor wafer 3 obtained by the calculation to a control unit 13 via a connection line 12. The control unit 13 serves as control means for controlling an operation of the heat treatment apparatus 1 , and is connected to the electric-power adjustment circuit provided in the halogen lamp house 4. The electric-power adjustment circuit controls an electric power supplied to the halogen lamp 2 according to a control signal from the control unit 13. Thereby, heating of the semiconductor wafer 3 by the halogen lamps 2 is controlled, and the semiconductor wafer 3 is heated or maintained at a predetermined temperature .
A description will now be given, with reference to FIG. 2, of the radiation thermometer 10 shown in FIG. 1. FIG. 2 is a functional block diagram of the radiation thermometer 10 shown in FIG. 1. The radiation thermometer 10 has a radiation light measuring part 20 and a calculating part 22. The optical fiber 9 is connected to the radiation light measuring part 20, and the radiation light from the semiconductor wafer 3 is supplied to radiation light measuring part 20 through the optical fiber 9. The radiation light measuring part 20 measures . various items containing an intensity of the radiation light supplied through the optical fiber 9, and supplies the result of measurement to the calculating part 22.
The calculating part 22 obtains the temperature of the semiconductor wafer 3 by calculation based on the result of measurement supplied from the radiation light measuring part 20. The temperature of the semiconductor wafer 3 is supplied to the control part 13 through the connection line 12. Moreover, the value of the electric power to be supplied to the lamps 2 is supplied from the control part 13 to the calculating part 22 through the connection line 12.
Next, a description will be given of a temperature estimating method, which is a base of a calculation of the temperature performed by the calculating part 22. The temperature estimating method is performed based on an apparatus model with respect to heat balance of the semiconductor wafer 3 as a measuring object.
FIG. 3 is a schematic diagram of a heat balance model used as a base of the calculation performed by the calculating part 22 of the radiation thermometer 10. In the heat balance model shown in FIG. 3, an amount of heat transfer with respect to the wafer is represented by the following equation (1) , where Δ is a discrete time interval. ΔQ = * Al{-(βiθ1 +εβ2)σT?(t)
-kϊ(Ti(t) -Ti_1(t)) ~k2(Ti(t) -Ti+l(t))
Figure imgf000012_0001
In equation (1) , the subscript i indicates the i-th element of the semiconductor wafer 3 when the semiconductor wafer 3 is divided into a plurality of concentric rings, and Ai represents an area of the i-th element. ki and k2 represent coefficients relate to heat transfer, and σ is a Stefan-Boltzmann constant. Additionally, εx represents an emissivity of the reflector 4a of the halogen lamp house 4, and ε2 represents an emissivity of the surface of the bottom surface 8, which faces the semiconductor wafer 3. θi is an effective emissivity in consideration of the multiple reflection of the surface of the simiconductor wafer 3, which faces the lamps 2 , and θ2 is an effective emissivity in consideration of the multiple reflection of the surface of the semiconductor wafer 3, which faces the bottom plate 8.
Moreover, in equation (1) , u is an input (for example, a current supplied to the lamp) to a halogen lamp, and an energy of the radiation light travels from the halogen lamp 2 to the semiconductor wafer 3 is represented by a function g(u) . The first term in equation (1) expresses a heat which escapes by radiation from both the front and back sides of the semiconductor wafer, the second term expresses an amount of heat transferred between the element i-1 and the element i+1 , and the third term expresses an amount of heat input from a halogen lamp.
Additionally, a temperature of the i-th element is represented by the following equation (2) , where Mci is a heat capacity of the i-th element.
Ti(t+1) = Ti(t)+ΔQ/MCi (2)
Furthermore, the intensity of the radiation light measured by the radiation thermometer is expressed by the following equation (3) using the Planck's law, where h is a Planck's constant, c is a velocity of light, kB is a Boltzmann constant and λ is a measured wave length.
Figure imgf000013_0001
According to the above-mentioned equations (1) ,
(2) and (3) , the extended Kalman filter, which calculates a temperature of a semiconductor wafer while estimating an effective emissivity, can be designed by setting effective emissivities θi and θ2 of the front and back sides of the semiconductor wafer as unknown values and setting the temperature of the semiconductor wafer as a state variable. FIG. 4 is a block diagram showing a process of estimating the effective emissivity and the temperature of the semiconductor wafer in practice. The Kalman .filter is an on-line data algorithm which gives sequentially a least squares estimate value of a state of a system in accordance with 1) a dynamic characteristic of a system producing a signal, 2) a statistical characteristic of noise, and 3) priori information with respect to an initial value and observation data given according to passage of ime.
Suppose that a difference equation of a linear system can be expressed by the following equation (4) using an input u , an output y, and a state x .
yt = Ctxt + vt 'A)
An estimated value Λ of the state x according the Kalman filter is given by the following equation (5) .
x»υt = Aχut +Btut +κ t(yt - ct χut ( 5 )
Where, t is a time in a discrete time system, and Kt is a value referred to as a Kalman gain. The Kalman gain Kt is represented by the following equation (6) by using a covariance analysis matrix P/t - ι = E{ [xt- x t/t-ιI [ ~x /-ι]T} of an error (xt-xΛt/t -I) of an estimated value and a covariance analysis matrix Rt of noise entering an output.
Kι = Ptlt-\Ct CTP C1 + «r (6
The Kalman filter is designed based on a linear system like a formula (4) . An extended Kalman filter is linearized near an operating point so as to extend the Kalman filter to a non-linear system. That is, the Kalman filter can be designed for a system having a known operating characteristic. However, when an unknown constant is contained, the unknown value is reselected as a variable so as to establish a difference equation of the system, and, thereby, an adaptive filter using the algorithm of the extended Kalman filter can be designed. When a system can be expressed by the following equation containing an unknown value θ, a state variable x in the difference equation (7) of the system is substituted by z as represented by equation (8) so as to obtain equation (9) .
xt+l = A(θ )xt + B(θ)u[ + wl
(7) yt = C(θ)xt + Vt
Figure imgf000015_0001
= f(xt,θ) + wt = f(zt) + wt
Then, the state value x (e.g., a temperature of the semiconductor wafer) can be obtained by calculation while estimating the unknown value θ by applying equation (9) to the algorithm of an extended Kalman filter.
It should be noted that coefficients A, B and C in the above-mentioned formula (4) are determined based on comparison of results of various experiments using a blackbody furnace .
As mentioned above, in the present embodiment, a temperature of the semiconductor wafer 3 can be obtained while estimating an emissivity of the semiconductor wafer 3, by using an extended Kalman filter for the calculating part 22 of the radiation thermometer 10.
When a temperature of a bare wafer, which was heated to about 600°C at a heating rate of 10 °C/sec, was measured using the radiation thermometer according to the present embodiment, an error with respect to a temperature measured by a thermocouple was about ±10°C.
As mentioned above, the radiation thermometer according to the present embodiment can obtain a temperature very close to an actual temperature, by merely measuring an intensity of a radiation light. For this reason, a hardware structure of the radiation thermometer is simplified, and the radiation thermometer can be manufactured at a cost of about 1/4 of a manufacturing cost of the conventional radiation thermometer that actually measures an emissivity.
The present invention is not limited to the specifically disclosed embodiment, and variations and modifications may be made without departing from the scope of the present invention.

Claims

1. A temperature measuring method for measuring a temperature of a measuring object according to a non- contact manner, comprising the steps of: measuring a radiation light radiated from the measuring object; obtaining a state variable according to estimate algorithm calculation based on a result of measurement of the radiation light, the state variable including an effective emissivity as an unknown variable; and calculating the temperature of the measuring object based on the calculated state variable.
2. The temperature measuring method as claimed in claim 1, wherein the step of obtaining the state variable includes a step of inputting an energy value used for heating the measuring object so as to calculate the state variable based on a heat balance model having an input as the energy value and an output as the result of measurement of the radiation light, the state variable further including the temperature of the measuring object as an unknown variable.
3. The temperature measuring method as claimed in claim 1 , wherein the estimate algorithm calculation is an extended Kalman filter algorithm obtained by extending a Kalman filter into a nonlinear system.
4. A temperature measuring apparatus for measuring a temperature of a measuring object according to a non-contact manner, comprising: measuring means for measuring a radiation light radiated from the measuring object; state value obtaining means for obtaining a state variable according to estimate algorithm calculation based on a result of measurement of the radiation light, the state variable including an effective emissivity as an unknown variable; and temperature calculating means for calculating the temperature of the measuring object based on the calculated state variable.
5. The temperature measuring apparatus as claimed in claim 4, wherein said state value obtaining means includes inputting means for inputting an energy value used for heating the measuring object so as to calculate the state variable based on a heat balance model having an input as the energy value and an output as the result of measurement of the radiation light, the state variable further including the temperature of the measuring object as an unknown variable.
6. The temperature measuring apparatus as claimed in claim 4, wherein the estimate algorithm calculation is an extended Kalman filter algorithm obtained by extending a Kalman filter into a nonlinear system.
7. A semiconductor heat treatment apparatus for applying a heat treatment to a semiconductor substrate, comprising; heating means for heating the semiconductor substrate; a radiation thermometer for measuring a temperature of the semiconductor substrate, the radiation thermometer comprising measuring means for measuring a radiation light radiated from the heated semiconductor substrate, state variable obtaining means for obtaining a state variable according to estimate algorithm calculation based on a result of measurement of the radiation light, the state variable including an effective emissivity as an unknown variable, and temperature calculating means for calculating the temperature of the measuring object based on the calculated state variable; and control means for controlling the energy supplied to said heating means based on the temperature calculated by said temperature calculating means .
8. The semiconductor heat treatment apparatus as claimed in claim 7 , wherein said state variable obtaining means includes inputting means for inputting an energy value used for heating the measuring object so as to calculate the state variable based on a heat balance model having an input as the energy value and an output as the result of measurement of the radiation light, the state variable further including the temperature of the measuring object as an unknown variable.
9. The semiconductor heat treatment apparatus as claimed in claim 7 , wherein the estimate algorithm calculation is an extended Kalman filter algorithm obtained by extending a Kalman filter into a nonlinear system.
PCT/JP2002/002032 2001-03-06 2002-03-05 Temperature measuring method and apparatus and semiconductor heat treatment apparatus WO2002075264A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-062600 2001-03-06
JP2001062600A JP2006170616A (en) 2001-03-06 2001-03-06 Method and device for measuring temperature, and semiconductor heat treating device

Publications (1)

Publication Number Publication Date
WO2002075264A1 true WO2002075264A1 (en) 2002-09-26

Family

ID=18921716

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/002032 WO2002075264A1 (en) 2001-03-06 2002-03-05 Temperature measuring method and apparatus and semiconductor heat treatment apparatus

Country Status (3)

Country Link
JP (1) JP2006170616A (en)
TW (1) TW528860B (en)
WO (1) WO2002075264A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104165711A (en) * 2014-08-06 2014-11-26 山东省德鲁计量科技有限公司 Verification table temperature measuring method based on Kalman filtering
US9025943B2 (en) 2010-09-28 2015-05-05 SCREEN Holdings Co., Ltd. Heat treatment apparatus and heat treatment method for heating substrate by irradiating substrate with flashes of light
US9070590B2 (en) 2008-05-16 2015-06-30 Mattson Technology, Inc. Workpiece breakage prevention method and apparatus
JP2016114498A (en) * 2014-12-16 2016-06-23 株式会社シバソク Testing apparatus
US9627244B2 (en) 2002-12-20 2017-04-18 Mattson Technology, Inc. Methods and systems for supporting a workpiece and for heat-treating the workpiece

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI382161B (en) * 2008-12-31 2013-01-11 China Steel Corp Infrared temperature measurement with high accuracy
US9658109B2 (en) * 2013-03-15 2017-05-23 Heptagon Micro Optics Pte. Ltd. Non-contact thermal sensor module
JP6167795B2 (en) * 2013-09-23 2017-07-26 ブラザー工業株式会社 Deposition apparatus, temperature calculation method, and program

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5635026A (en) * 1979-08-30 1981-04-07 Toshiba Corp Temperature estimating system for heated object
US5154512A (en) * 1990-04-10 1992-10-13 Luxtron Corporation Non-contact techniques for measuring temperature or radiation-heated objects
JPH102801A (en) * 1996-06-13 1998-01-06 Fujitsu Ltd Method for detecting temperature of heated body in infrared heating furnace
WO1999010783A1 (en) * 1997-08-22 1999-03-04 Voyan Technology A method for real-time nonlinear system state estimation and control
WO1999047901A1 (en) * 1998-03-18 1999-09-23 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5635026A (en) * 1979-08-30 1981-04-07 Toshiba Corp Temperature estimating system for heated object
US5154512A (en) * 1990-04-10 1992-10-13 Luxtron Corporation Non-contact techniques for measuring temperature or radiation-heated objects
JPH102801A (en) * 1996-06-13 1998-01-06 Fujitsu Ltd Method for detecting temperature of heated body in infrared heating furnace
WO1999010783A1 (en) * 1997-08-22 1999-03-04 Voyan Technology A method for real-time nonlinear system state estimation and control
WO1999047901A1 (en) * 1998-03-18 1999-09-23 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9627244B2 (en) 2002-12-20 2017-04-18 Mattson Technology, Inc. Methods and systems for supporting a workpiece and for heat-treating the workpiece
US9070590B2 (en) 2008-05-16 2015-06-30 Mattson Technology, Inc. Workpiece breakage prevention method and apparatus
US9025943B2 (en) 2010-09-28 2015-05-05 SCREEN Holdings Co., Ltd. Heat treatment apparatus and heat treatment method for heating substrate by irradiating substrate with flashes of light
CN104165711A (en) * 2014-08-06 2014-11-26 山东省德鲁计量科技有限公司 Verification table temperature measuring method based on Kalman filtering
JP2016114498A (en) * 2014-12-16 2016-06-23 株式会社シバソク Testing apparatus

Also Published As

Publication number Publication date
TW528860B (en) 2003-04-21
JP2006170616A (en) 2006-06-29

Similar Documents

Publication Publication Date Title
EP0490290B1 (en) Calibration for bichannel radiation detection
US5874711A (en) Apparatus and method for determining the temperature of a radiating surface
JP4357715B2 (en) Temperature calibration method for heat treatment equipment
JP4033939B2 (en) Method for calibrating a temperature measurement system
JP2009532877A (en) Adaptive control method for rapid thermal processing of substrates
WO2007005489A2 (en) Method and system for determining optical properties of semiconductor wafers
JPH1098084A (en) Substrate temperature measuring method and device
JPH06323915A (en) Method of thermometry for material body
KR20020000773A (en) Method for determining the temperature in a thermal processing chamber
JP2002522912A (en) Tuning of substrate temperature measurement system
CN106165079B (en) Processing system and method for calibrating, verifying workpiece process and processing workpiece at high temperature
JP2001077041A (en) Temperature calibrating method for thermal process device
WO2002075264A1 (en) Temperature measuring method and apparatus and semiconductor heat treatment apparatus
KR100840806B1 (en) Method and device for thermally treating semiconductor wafers
US6515261B1 (en) Enhanced lift pin
KR100708585B1 (en) Method for processing silicon workpieces using hybrid optical thermometer system
EP0520417B1 (en) Temperature control system for lamp annealer
KR20010050894A (en) System and method for determining stray light in a thermal processing system
EP0665949B1 (en) A radiation pyrometer assembly for sensing the temperature of an elongate body moving longitudinally
JPH07201765A (en) Heat-treating device and heat treatment
JPH07502821A (en) Heating control method and device
Adams et al. In‐Situ Optical Wafer Temperature Measurement
JP2000218151A (en) Vacuum apparatus
KR20080082054A (en) Multi-layer temperature control apparatus of semiconductor manufacturing equipment and method of the same
Kreider et al. RTP calibration wafer using thin-film thermocouples

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SI SK SL TJ TM TN TR TT TZ UA UG US UZ VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

122 Ep: pct application non-entry in european phase