WO2002071105A3 - Method of fabricating reflection-mode euv diffraction elements - Google Patents

Method of fabricating reflection-mode euv diffraction elements Download PDF

Info

Publication number
WO2002071105A3
WO2002071105A3 PCT/US2001/043058 US0143058W WO02071105A3 WO 2002071105 A3 WO2002071105 A3 WO 2002071105A3 US 0143058 W US0143058 W US 0143058W WO 02071105 A3 WO02071105 A3 WO 02071105A3
Authority
WO
WIPO (PCT)
Prior art keywords
euv
multilayer
relief profile
substrate
reflection
Prior art date
Application number
PCT/US2001/043058
Other languages
French (fr)
Other versions
WO2002071105A2 (en
Inventor
Patrick P Naulleau
Original Assignee
Univ California
Patrick P Naulleau
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ California, Patrick P Naulleau filed Critical Univ California
Priority to AU2001297650A priority Critical patent/AU2001297650A1/en
Publication of WO2002071105A2 publication Critical patent/WO2002071105A2/en
Publication of WO2002071105A3 publication Critical patent/WO2002071105A3/en

Links

Classifications

    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
    • G02B5/0825—Multilayer mirrors, i.e. having two or more reflecting layers the reflecting layers comprising dielectric materials only
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1847—Manufacturing methods
    • G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S359/00—Optical: systems and elements
    • Y10S359/90—Methods

Abstract

Techniques for fabricating a well-controlled, quantized-level, engineered surface that serves as substrates for EUV reflection multilayer overcomes problems associated with the fabrication of reflective EUV diffraction elements. The technique when employed to fabricate an EUV diffraction element that includes the steps of: (a) forming an etch stack comprising alternating layers of first and second materials on a substrate surface where the two material can provide relative etch selectivity; (b) creating a relief profile in the etch stack wherein the relief profile has a defined contour; and (c) depositing a multilayer reflection film over the relief profile wherein the film has an outer contour that substantially matches that of the relief profile. For a typical EUV multilayer, if the features on the substrate are larger than 50 nm, the multilayer will be conformal to the substrate. Thus, the phase imparted to the reflected wavefront will closely match that geometrically set by the surface height profile.
PCT/US2001/043058 2000-12-05 2001-11-13 Method of fabricating reflection-mode euv diffraction elements WO2002071105A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001297650A AU2001297650A1 (en) 2000-12-05 2001-11-13 Method of fabricating reflection-mode euv diffraction elements

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/730,970 US6392792B1 (en) 2000-12-05 2000-12-05 Method of fabricating reflection-mode EUV diffraction elements
US09/730,970 2000-12-05

Publications (2)

Publication Number Publication Date
WO2002071105A2 WO2002071105A2 (en) 2002-09-12
WO2002071105A3 true WO2002071105A3 (en) 2003-03-13

Family

ID=24937538

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/043058 WO2002071105A2 (en) 2000-12-05 2001-11-13 Method of fabricating reflection-mode euv diffraction elements

Country Status (3)

Country Link
US (1) US6392792B1 (en)
AU (1) AU2001297650A1 (en)
WO (1) WO2002071105A2 (en)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6861273B2 (en) * 2001-04-30 2005-03-01 Euv Llc Method of fabricating reflection-mode EUV diffusers
US7053988B2 (en) * 2001-05-22 2006-05-30 Carl Zeiss Smt Ag. Optically polarizing retardation arrangement, and microlithography projection exposure machine
US6641959B2 (en) * 2001-08-09 2003-11-04 Intel Corporation Absorberless phase-shifting mask for EUV
US6577442B2 (en) * 2001-09-27 2003-06-10 Intel Corporation Reflective spectral filtering of high power extreme ultra-violet radiation
US6905618B2 (en) * 2002-07-30 2005-06-14 Agilent Technologies, Inc. Diffractive optical elements and methods of making the same
US6835671B2 (en) * 2002-08-16 2004-12-28 Freescale Semiconductor, Inc. Method of making an integrated circuit using an EUV mask formed by atomic layer deposition
US6986971B2 (en) * 2002-11-08 2006-01-17 Freescale Semiconductor, Inc. Reflective mask useful for transferring a pattern using extreme ultraviolet (EUV) radiation and method of making the same
EP1426821B1 (en) * 2002-11-26 2017-10-18 ASML Netherlands B.V. Method of fabricating an optical element, lithographic apparatus and device manufacturing method
TWI243288B (en) * 2002-11-26 2005-11-11 Asml Netherlands Bv Method of fabricating an optical element, lithographic apparatus and semiconductor device manufacturing method
US6867846B2 (en) * 2003-01-15 2005-03-15 Asml Holding Nv Tailored reflecting diffractor for EUV lithographic system aberration measurement
US7002747B2 (en) * 2003-01-15 2006-02-21 Asml Holding N.V. Diffuser plate and method of making same
US7268891B2 (en) * 2003-01-15 2007-09-11 Asml Holding N.V. Transmission shear grating in checkerboard configuration for EUV wavefront sensor
US7027164B2 (en) * 2003-01-15 2006-04-11 Asml Holding N.V. Speckle reduction method and system for EUV interferometry
DE10309138A1 (en) * 2003-02-28 2004-09-16 Till I.D. Gmbh microscope device
US7217940B2 (en) * 2003-04-08 2007-05-15 Cymer, Inc. Collector for EUV light source
US6986974B2 (en) 2003-10-16 2006-01-17 Freescale Semiconductor, Inc. Attenuated phase shift mask for extreme ultraviolet lithography and method therefore
US7016030B2 (en) * 2003-10-20 2006-03-21 Euv Llc Extended surface parallel coating inspection method
US7198872B2 (en) * 2004-05-25 2007-04-03 International Business Machines Corporation Light scattering EUVL mask
JP4479535B2 (en) * 2005-02-21 2010-06-09 セイコーエプソン株式会社 Optical element manufacturing method
US7372623B2 (en) * 2005-03-29 2008-05-13 Asml Netherlands B.V. Multi-layer spectral purity filter, lithographic apparatus including such a spectral purity filter, device manufacturing method, and device manufactured thereby
US7599112B2 (en) * 2005-10-11 2009-10-06 Nikon Corporation Multilayer-film mirrors, lithography systems comprising same, and methods for manufacturing same
US7948675B2 (en) 2005-10-11 2011-05-24 Nikon Corporation Surface-corrected multilayer-film mirrors with protected reflective surfaces, exposure systems comprising same, and associated methods
US8116009B2 (en) 2006-05-16 2012-02-14 The Trustees Of The University Of Pennsylvania Far-field sub-diffraction optical lenses (FaSDOL)
NL1036305A1 (en) * 2007-12-21 2009-06-23 Asml Netherlands Bv Grating for EUV radiation, the method for manufacturing the grating and wavefront measurement system.
US8331027B2 (en) * 2008-07-29 2012-12-11 The Regents Of The University Of California Ultra-high density diffraction grating
DE102009029471A1 (en) * 2009-09-15 2011-03-31 Carl Zeiss Smt Gmbh Mirror for use in a microlithography projection exposure apparatus
DE102011005543A1 (en) * 2011-03-15 2012-09-20 Carl Zeiss Smt Gmbh Method of correcting the surface shape of a mirror
US9151881B2 (en) * 2012-11-12 2015-10-06 Kla-Tencor Corporation Phase grating for mask inspection system
DE102013202948A1 (en) * 2013-02-22 2014-09-11 Carl Zeiss Smt Gmbh Illumination system for an EUV lithography device and facet mirror therefor
CN103645533A (en) * 2013-12-13 2014-03-19 聊城大学 Preparing method of nanoscale optical grating

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0815510A (en) * 1994-06-30 1996-01-19 Nikon Corp Binary optics and their production
JPH08334610A (en) * 1995-06-06 1996-12-17 Furukawa Electric Co Ltd:The Production of diffraction grating
US5591678A (en) * 1993-01-19 1997-01-07 He Holdings, Inc. Process of manufacturing a microelectric device using a removable support substrate and etch-stop
US5958605A (en) * 1997-11-10 1999-09-28 Regents Of The University Of California Passivating overcoat bilayer for multilayer reflective coatings for extreme ultraviolet lithography
JP2000155207A (en) * 1998-09-18 2000-06-06 Canon Inc Manufacture of element
EP1011028A2 (en) * 1998-12-15 2000-06-21 Xerox Corporation A method for fabrication of multi-step structures using embedded etch stop layers

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3542453A (en) * 1967-10-25 1970-11-24 Frederick W Kantor Grating device composed of elongated layers
JPS622207A (en) * 1985-06-28 1987-01-08 Hitachi Ltd Diffraction grating and its production
US4895790A (en) 1987-09-21 1990-01-23 Massachusetts Institute Of Technology High-efficiency, multilevel, diffractive optical elements
US4915463A (en) 1988-10-18 1990-04-10 The United States Of America As Represented By The Department Of Energy Multilayer diffraction grating
US5257132A (en) * 1990-09-25 1993-10-26 The United States Of America As Represented By The United States Department Of Energy Broadband diffractive lens or imaging element
US5737125A (en) 1992-10-27 1998-04-07 Olympus Optical Co., Ltd. Diffractive optical element and optical system including the same
JPH06258510A (en) * 1993-03-09 1994-09-16 Canon Inc Mold for producing diffraction grating and its production
US5422753A (en) 1993-12-23 1995-06-06 Xerox Corporation Binary diffraction optical element for controlling scanning beam intensity in a raster output scanning (ROS) optical system
US5589983A (en) 1993-12-29 1996-12-31 Eastman Kodak Company Method of manufacturing a diffractive surface profile
US5907436A (en) 1995-09-29 1999-05-25 The Regents Of The University Of California Multilayer dielectric diffraction gratings
US5795684A (en) 1996-04-05 1998-08-18 Intel Corporation Photolithography mask and method of fabrication
US5935733A (en) 1996-04-05 1999-08-10 Intel Corporation Photolithography mask and method of fabrication
US5935737A (en) 1997-12-22 1999-08-10 Intel Corporation Method for eliminating final euv mask repairs in the reflector region
US5958629A (en) 1997-12-22 1999-09-28 Intel Corporation Using thin films as etch stop in EUV mask fabrication process
US5962174A (en) 1998-02-13 1999-10-05 Micron Technology, Inc. Multilayer reflective mask

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5591678A (en) * 1993-01-19 1997-01-07 He Holdings, Inc. Process of manufacturing a microelectric device using a removable support substrate and etch-stop
JPH0815510A (en) * 1994-06-30 1996-01-19 Nikon Corp Binary optics and their production
JPH08334610A (en) * 1995-06-06 1996-12-17 Furukawa Electric Co Ltd:The Production of diffraction grating
US5958605A (en) * 1997-11-10 1999-09-28 Regents Of The University Of California Passivating overcoat bilayer for multilayer reflective coatings for extreme ultraviolet lithography
JP2000155207A (en) * 1998-09-18 2000-06-06 Canon Inc Manufacture of element
EP1011028A2 (en) * 1998-12-15 2000-06-21 Xerox Corporation A method for fabrication of multi-step structures using embedded etch stop layers

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1996, no. 05 31 May 1996 (1996-05-31) *
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 04 30 April 1997 (1997-04-30) *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 09 13 October 2000 (2000-10-13) *

Also Published As

Publication number Publication date
WO2002071105A2 (en) 2002-09-12
AU2001297650A1 (en) 2002-09-19
US6392792B1 (en) 2002-05-21

Similar Documents

Publication Publication Date Title
WO2002071105A3 (en) Method of fabricating reflection-mode euv diffraction elements
AU2003217818A1 (en) Thin film coating having transparent base layer
WO2002065171A8 (en) Multi-layer thin film optical filter arrangement
WO2005016842A3 (en) Transparent substrate comprising an antireflection coating
EP1498936A4 (en) Reflection type mask blank and reflection type mask and production methods for them
EP1154474A4 (en) Semiconductor device and method of manufacture thereof
WO2002007233A3 (en) Group iii nitride compound semiconductor device
WO2004005210A3 (en) Transparent substrate comprising antiglare coating
EP1947682A4 (en) Multilayer reflecting mirror, multilayer reflecting mirror manufacturing method, optical system, exposure apparatus and device manufacturing method
EP1371682A3 (en) Polyester film for display
EP2267491A3 (en) Transparent substrate with anti reflective coating
AU2003250246A1 (en) Method for production of a glazed piece provided with a multi-layer coating
JP2019035947A5 (en)
WO2003092994A3 (en) Polyolefin film with embossed surface
WO2009062665A3 (en) Optical element for the reflection of uv radiation, method for manufacturing the same and projection exposure apparatus comprising the same
AU2003209795A1 (en) A method for forming a film, by using electrostatic forces
JP2019035954A5 (en)
TW350972B (en) Semiconductor and the manufacturing method
AU4742400A (en) Process for production of a dielectric multi-layered reflecting coating
WO2005022258A3 (en) Photomask and method for maintaining optical properties of the same
WO2003026023A3 (en) Synthesis of layers, coatings or films using pressure containment exerted on precursor layers
WO2002022919A3 (en) Forming a single crystal semiconductor film on a non-crystalline surface
WO2002002352A3 (en) A method for replicating ad protecting a surface relief
KR20000006152A (en) Method for fabricating semiconductor devices
US20070218410A1 (en) Method for forming a material layer

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
AK Designated states

Kind code of ref document: A3

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP