WO2002071105A2 - Method of fabricating reflection-mode euv diffraction elements - Google Patents
Method of fabricating reflection-mode euv diffraction elements Download PDFInfo
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- WO2002071105A2 WO2002071105A2 PCT/US2001/043058 US0143058W WO02071105A2 WO 2002071105 A2 WO2002071105 A2 WO 2002071105A2 US 0143058 W US0143058 W US 0143058W WO 02071105 A2 WO02071105 A2 WO 02071105A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- stack
- etch
- relief profile
- reflection film
- euv
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000000151 deposition Methods 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 229910052790 beryllium Inorganic materials 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910017305 Mo—Si Inorganic materials 0.000 claims description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims 2
- 229910052906 cristobalite Inorganic materials 0.000 claims 2
- 229910052682 stishovite Inorganic materials 0.000 claims 2
- 229910052905 tridymite Inorganic materials 0.000 claims 2
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 230000008569 process Effects 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 3
- 238000000609 electron-beam lithography Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229910052580 B4C Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910003178 Mo2C Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002508 contact lithography Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
- G02B5/0825—Multilayer mirrors, i.e. having two or more reflecting layers the reflecting layers comprising dielectric materials only
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/067—Construction details
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S359/00—Optical: systems and elements
- Y10S359/90—Methods
Definitions
- the invention relates to high-efficiency multilevel diffractive optical elements and particularly to fabrication techniques that produce arbitrary multilevel-phase diffraction elements for reflection mode EUV devices.
- Multilevel-phase diffraction elements play a very important role in the realm of the optics. Examples of such devices include diffusers, kinoforms, and phase grating such as sinusoidal and blazed gratings. With the advent of multilayer reflectors, optical systems have been pushing towards ever-shorter wavelengths. Currently, most EUV diffraction elements are of the binary amplitude type, which severely limits their flexibility. Theoretically, on-axis diffractive phase elements consisting of a grating having a given period can achieve 100 percent diffraction efficiency. To achieve this efficiency, however, a continuous phase profile within any given period is necessary. The theoretical diffraction efficiency of this surface profile is also relatively sensitive to a change in wavelength.
- the technology for producing high quality, high efficiency, continuous-phase-profile reflection diffractive elements working at EUV wavelengths does not presently exist.
- a compromise that results in a relatively high diffraction efficiency and ease of fabrication is a multilevel phase grating.
- the multilevel phase surface profiles of the grating can be fabricated using standard, semiconductor integrated circuit fabrication techniques.
- a typical binary optics fabrication process starts with a mathematical phase description of a diffractive phase profile and results in a fabricated multilevel diffractive surface.
- the next step is to transfer the phase profile information into the substrate. This can be achieved through a variety of methods including conventional and electron-beam lithography methods. Typically this is done by decomposing the desired multilevel pattern into a series of binary patterns and performing multiple lithography steps.
- a substrate of the desired material such as silicon or glass
- a thin layer of photoresist is coated with a thin layer of photoresist.
- a first pattern is transferred to the photoresist using a standard lithography technique such as, for example, projection, contact, or electron-beam lithography.
- the photoresist is developed, washing away the exposed resist and leaving the binary pattern in the remaining photoresist. This photoresist will act as an etch stop.
- a reliable and accurate way to etch typical substrate materials is reactive ion etching.
- the process of reactive ion etching anisotropically etches material at very repeatable rates.
- the desired etch depth can be obtained very accurately.
- the anisotropic nature of the process assures a vertical etch, resulting in a true binary surface relief profile.
- the process may then be repeated using the next binary pattern.
- the partially patterned substrate is recoated with photoresist and exposed using the second binary pattern, which has half the period of the first mask. After developing and washing away the exposed photoresist, the substrate is reactively ion etched to a depth half that of the first etch. Removal of the remaining photoresist results in a 4 level approximation to the desired profile.
- the process may be repeated a third and fourth time with binary patterns having periods of one-quarter and one eighth that of the first mask, and etching the substrates to depths of one-quarter and one-eighth that of the first etch. The successive etches s result in elements having 8 and 16 phase levels.
- a 16 phase level structure can theoretically achieve 99 percent diffraction efficiency.
- the residual 1 percent of the light is diffracted into higher orders and manifests itself as scatter. In many optical systems, this is a tolerable amount of scatter.
- the fabrication of the 16 phase level structure is relatively efficient due to the fact that only four processing iterations are required to produce the element.
- Binary optical elements have a number of advantages over conventional optics. Because they are computer generated, these elements can perform more generalized wavefront shaping than conventional lenses or mirrors. Elements need only be mathematically defined: no reference surface is necessary.
- EUV extreme ultraviolet
- the step height control would have to be a small fraction of a nanometer. Such etch control is extremely difficult to achieve in practice.
- the present invention describes a method well-suited to the fabrication of reflective EUV diffraction elements.
- the present invention is directed to techniques for fabricating reflective EUV diffraction elements. This goal is achieved by fabricating a well-controlled, quantized-level, engineered surface, which is subsequently overcoated with a conventional EUV reflection multilayer. For a typical EUV multilayer, if the features on the substrate are larger than 50 nm, the overcoated multilayer will be conformal to the substrate. Thus, the phase imparted to the reflected wavefront will closely match that geometrically set by the surface height profile. This avoids the difficulties involved in trying to directly pattern into the reflective EUV multilayer and allows the deposited multilayer to effectively smooth out high-frequency (undesired) roughness which may be present on the patterned substrate. Accordingly, one embodiment the invention is directed to a method of fabricating an EUV diffraction element that includes the steps of:
- step (b) includes forming a relief profile having at least three levels wherein each level is formed by: (i) forming a resist film on top of the stack;
- the multilayer reflection film comprises alternating layers of a third material having a refractive index and a fourth material having a refractive index that is larger than that of the third material.
- the invention is directed to an EUV device including a multilevel diffraction element that includes:
- Figure 2A, 2B, and 2C illustrate multiple pattern-and-etch steps employed to define an arbitrary relief profile
- Figures 3A and 3B illustrate an inventive multilayer reflection stack matched to the wavelength of interest.
- Figure 1 illustrates a multilayer stack 12 that is deposited on the upper surface of substrate 10.
- the layers in the stack preferably comprise alternating layers of two different materials that can be etched by conventional techniques and that exhibit good etch selectivity properties.
- Each stack layer provides a natural etch stop allowing accurate step heights to be achieved. This natural etch stop removes the burden of extremely high accuracy etch control plaguing the application of standard optical methods described above to the EUV problem of interest here.
- Extremely high accuracy thin-film and multilayer deposition techniques exist making the step-height control relatively easy to achieve.
- Modern deposition technology yields step height control on the order of 0.1 % peak-to-valley for films with bilayer periods of approximately 7 nm. This accuracy well exceeds the requirements for high-efficiency quantized-level reflective EUV diffraction elements.
- the etch-control stack include, for example, silicon and silicon dioxide.
- the substrate 10 serves as a support and can be made of any suitable superflat ( ⁇ 3 Angstrom rms roughness) material including, for example, silicon or glass.
- the multilayer stack 12 has seven layers which provide for a total of eight possible height levels. Typically, the number of layers will range from about 3 to 31 and preferably 7 to 15. The thickness of each layer will typically range from 1 nm to 20 nm. The heights of the layers are preferably substantially equal.
- the alternating layers are deposited by conventional techniques such as magnetron or ion-beam sputtering, thermal evaporation, electron beam deposition, or electroless chemical deposition.
- Figures 2A, 2B, and 2C show the formation of an arbitrary relief profile following three pattern-and-etch steps into the etch stack 12 shown in Figure 1.
- a profile is formed on top layer 14, which has the effect of creating a two-level phase profile.
- a three-level phase and a four- phase profile are formed as shown in Figures 2B and 2C, respectively.
- the first profile as illustrated in Figure 2A is produced by standard binary element fabrication techniques wherein a layer of photoresist is coated over layer 14.
- a lithography method (such as electron-beam lithography) is then used to transfer the first pattern to the photoreist.
- the photoreist is developed which results in a patterned layer of photoresist which acts as an etch mask for subsequent etching using, for example, reactive ion etching (RLE).
- RLE reactive ion etching
- the multiple pattern-and-etch procedure illustrated in Figures 2A, 2B, and 2C creates an arbitrary relief profile within the etch stack 12.
- 8 to 16 levels are more than sufficient to approximate the performance of a continuous phase device.
- the two materials used e.g., silicon and silicon dioxide
- the application of current coating technologies allow for atomic level thickness control thereby permitting good step height accuracy.
- the step heights should be in the order of about 3 nm and the step height control should be better than 10% .
- Figure 3A shows an overcoat of a multilayer reflection stack 16 that is formed over the structure of Figure 2C. It is important to note that the scale of the figure is greatly exaggerated for clarity; in reality the lateral feature size will be on the order of 100 times larger than the step height. For example in a typical EUV diffuser, the step height might be 3 nm whereas the lateral feature size would be about 300 nm.
- Figure 3B is a view of a portion of the multilayer reflection stack depicting the features in a more to realistic scale.
- the multilayer reflection stack 16 is designed to reflect at the wavelength of interest and is formed of alternating layers of two or more materials.
- Preferred materials include, for example, molybdenum (Mo), silicon (Si), tungsten (W), carbon (C), beryllium (Be), ruthenium (Ru), B 4 C, Mo 2 C, titanium (Ti), and vanadium (V).
- Preferred stacks are formed from alternating layers of two materials that are selected from the following list of seven pairs: Mo-Si, W-C, Mo-Be, Ru-B 4 C, Mo 2 C-Si, Ti-C, V-C. Alternating layers of Mo and Si are particularly preferred for EUV applications (e.g., on the order of 10 nm).
- the individual layers of the multilayer stack 16 are formed by conventional techniques such as those employed for forming the individual layers of etch stack 12 (Fig. 1) described above.
- the number of bilayers in the reflective multilayer can vary depending on the desired performance in terms of wavelength and angular and temporal bandwidth. A larger number of layers will provide higher reflectivity at the cost of lower angular and temporal bandwidth.
- Overcoat 16 of Figure 3A is depicted to have 10 bilayers. Typically, the number of layered pairs will range from about 10 to 200 and preferably from about 20 to 80. Moreover, the layer pairs will typically have a bilayer periodicity of about 2 nm to 100 nm and preferably from about 5 nm to 30 nm. By “periodicity" is meant the thickness of one bilayer. Typically, the height of the individual stack layers will range from about 0.2 to 0.8 time the total bilayer thickness and preferably from about 0.4 to 0.6 times the total bilayer thickness.
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2001297650A AU2001297650A1 (en) | 2000-12-05 | 2001-11-13 | Method of fabricating reflection-mode euv diffraction elements |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US09/730,970 | 2000-12-05 | ||
US09/730,970 US6392792B1 (en) | 2000-12-05 | 2000-12-05 | Method of fabricating reflection-mode EUV diffraction elements |
Publications (2)
Publication Number | Publication Date |
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WO2002071105A2 true WO2002071105A2 (en) | 2002-09-12 |
WO2002071105A3 WO2002071105A3 (en) | 2003-03-13 |
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PCT/US2001/043058 WO2002071105A2 (en) | 2000-12-05 | 2001-11-13 | Method of fabricating reflection-mode euv diffraction elements |
Country Status (3)
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US (1) | US6392792B1 (en) |
AU (1) | AU2001297650A1 (en) |
WO (1) | WO2002071105A2 (en) |
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US6641959B2 (en) * | 2001-08-09 | 2003-11-04 | Intel Corporation | Absorberless phase-shifting mask for EUV |
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US6905618B2 (en) * | 2002-07-30 | 2005-06-14 | Agilent Technologies, Inc. | Diffractive optical elements and methods of making the same |
US6835671B2 (en) * | 2002-08-16 | 2004-12-28 | Freescale Semiconductor, Inc. | Method of making an integrated circuit using an EUV mask formed by atomic layer deposition |
US6986971B2 (en) * | 2002-11-08 | 2006-01-17 | Freescale Semiconductor, Inc. | Reflective mask useful for transferring a pattern using extreme ultraviolet (EUV) radiation and method of making the same |
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US8331027B2 (en) * | 2008-07-29 | 2012-12-11 | The Regents Of The University Of California | Ultra-high density diffraction grating |
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CN103645533A (en) * | 2013-12-13 | 2014-03-19 | 聊城大学 | Preparing method of nanoscale optical grating |
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Also Published As
Publication number | Publication date |
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WO2002071105A3 (en) | 2003-03-13 |
US6392792B1 (en) | 2002-05-21 |
AU2001297650A1 (en) | 2002-09-19 |
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