WO2002065557A1 - Organischer feldeffekt-transistor mit fotostrukturiertem gate-dielektrikum, ein verfahren zu dessen erzeugung und die verwendung in der organischen elektronik - Google Patents
Organischer feldeffekt-transistor mit fotostrukturiertem gate-dielektrikum, ein verfahren zu dessen erzeugung und die verwendung in der organischen elektronik Download PDFInfo
- Publication number
- WO2002065557A1 WO2002065557A1 PCT/DE2002/000312 DE0200312W WO02065557A1 WO 2002065557 A1 WO2002065557 A1 WO 2002065557A1 DE 0200312 W DE0200312 W DE 0200312W WO 02065557 A1 WO02065557 A1 WO 02065557A1
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- WIPO (PCT)
- Prior art keywords
- effect transistor
- field effect
- organic field
- transistor according
- insulator
- Prior art date
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/80—Interconnections, e.g. terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/211—Changing the shape of the active layer in the devices, e.g. patterning by selective transformation of an existing layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
Definitions
- Organic field effect transistor with photo-structured gate dielectric a method for its production and its use in organic electronics.
- the present invention relates to organic field-effect transistors, so-called OFETs, with a photo-structured gate dielectric, and to a method for the production thereof and the use of these field-effect transistors in organic electronics.
- the organic field effect transistors should be inexpensive and economical to manufacture in simple steps.
- the present invention accordingly relates to an organic field effect transistor, which is characterized in that on a flexible substrate in a first layer
- Source and drain electrodes and a semiconductor are arranged, on which an insulator is structured in a second layer and on which a gate electrode is applied in a third layer (top-gate structure).
- the organic field-effect transistor according to the invention is light and extremely flexible, since it is only made up of organic layers which are mainly structured by means of photolithography, but without the use of photoresist.
- the gate electrode of the organic field-effect transistor according to the invention can simultaneously be used as a conductor track to the source electrode of the next transistor.
- wafer-thin glasses can be used as the substrate, but plastic foils are preferred for reasons of cost. Polyethylene terephthalate and polyimide films are particularly preferred.
- the substrate should be as light and flexible as possible. Because the thickness of the substrate The actual thickness of the entire component is determined, all other layers together are only about 1000 nm thick, the substrate thickness should also be kept as small as possible. It is usually in the range of about 0.05-0.5 mm.
- the source and drain electrodes can be made of a wide variety of materials. The type of material will be largely determined by the type of preferred manufacture. For example, electrodes made of indium tin oxide (ITO) can be produced by photolithography on substrates coated with ITO. The ITO is etched away on the areas not covered by the photoresist. Electrodes made of polyaniline (PANI) can also be produced either by photostructuring or by photolithography on substrates coated with PANI. Likewise, electrodes made of conductive polymers can be produced by printing the conductive polymer directly onto the substrate. Conductive polymers are, for example, doped polyethylene (PEDOT) or possibly PANI.
- PEDOT doped polyethylene
- the semiconductor layer consists, for example, of conjugated polymers, such as polythiophenes, polythienylenevinylenes or polyfluorene derivatives, which can be processed from solution by spin coating, knife coating or printing. So-called “small olecules” are also suitable for the construction of the semiconductor layer, i.e. Oligomers such as sexithiophene or pentacene, which are vacuum-deposited onto the substrate.
- An essential aspect of the present subject matter of the invention is the way in which the insulator layer is built up. It is a networked isolator that is networked and structured using photolithography, i.e. under partial exposure. An insulator material is crosslinked in places with a crosslinker under acid catalysis.
- Insulator materials suitable in the context of the present invention are, for example, poly-4-hydroxystyrene or hydro- Melamine-formaldehyde resins containing xyl groups.
- the crosslinker is sensitive to acids and especially hexamethoxymethyl melamine (HMMM).
- HMMM hexamethoxymethyl melamine
- the acid catalysis is effected by means of a photoinitiator, for example diphenyliodonium tetrafluoroborate or triphenylsulfonium hexafluoroantimonate, which form an acid under the influence of light.
- the present invention also relates to a method for producing an organic field effect transistor, in which a flexible substrate is provided in the usual way with a source and drain electrode and a semiconductor, and is characterized in that an insulator is provided on the semiconductor is applied by applying a solution of an isolator material, which contains an acid-sensitive crosslinker and a photo initiator, through a shadow mask, which covers the source and drain electrodes, and then anneals, causing crosslinking at the exposed areas and the gate electrode is applied to the networked and structured insulator.
- an isolator material which contains an acid-sensitive crosslinker and a photo initiator
- FIG. 1 shows the structure of a conventional OFET
- 2 shows the structure of an OFET according to the invention
- FIG. 3 chemical reactions on which the production of the cross-linked, structured insulator layer is based.
- a conventional OFET consists of a substrate 1, source or drain electrodes 2 and 2 ', a semiconductor 3, an isolator 4 and the gate electrode 5.
- H H H 0 P- ⁇ o ⁇ ⁇ H3 ⁇ 3 P l-i tr ⁇ 0 10 ⁇ P-
- P- P- ⁇ ⁇ ⁇ ⁇ rt 0 ⁇ P pj a. 10 o P- N P- 0 P 1 s; ⁇ rt H ⁇ P- P- ⁇ ⁇ i rt. -. 3 0 ⁇ cn ⁇ tr ⁇ ⁇ 0 left
- the gate dielectric is therefore produced by photolithography without the use of photoresist.
- the result is an OFET whose gate electrode can simultaneously be used as a conductor track to the source electrode of the next transistor. Through-contacting between conductor tracks on different levels in organic integrated circuits is made possible.
- the OFETs according to the invention are outstandingly suitable for applications in the field of organic electronics and in particular in the production of identification stickers (ident tags), electronic watermarks, electronic bar codes, electronic toys, electronic tickets, for use in product or plagiarism protection or the anti-theft protection.
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02706645A EP1358684A1 (de) | 2001-02-09 | 2002-01-29 | Organischer feldeffekt-transistor mit fotostrukturiertem gate-dielektrikum, ein verfahren zu dessen erzeugung und die verwendung in der organischen elektronik |
US10/467,636 US7238961B2 (en) | 2001-02-09 | 2002-01-29 | Organic field effect transistor with a photostructured gate dielectric, method for the production and use thereof in organic electronics |
JP2002564769A JP2004518305A (ja) | 2001-02-09 | 2002-01-29 | 光パターン化されたゲート誘電体を備えた有機電界効果トランジスタ、その製造法および有機電子工学における使用 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10105914.0 | 2001-02-09 | ||
DE10105914A DE10105914C1 (de) | 2001-02-09 | 2001-02-09 | Organischer Feldeffekt-Transistor mit fotostrukturiertem Gate-Dielektrikum und ein Verfahren zu dessen Erzeugung |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002065557A1 true WO2002065557A1 (de) | 2002-08-22 |
Family
ID=7673418
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2002/000312 WO2002065557A1 (de) | 2001-02-09 | 2002-01-29 | Organischer feldeffekt-transistor mit fotostrukturiertem gate-dielektrikum, ein verfahren zu dessen erzeugung und die verwendung in der organischen elektronik |
Country Status (5)
Country | Link |
---|---|
US (1) | US7238961B2 (de) |
EP (1) | EP1358684A1 (de) |
JP (1) | JP2004518305A (de) |
DE (1) | DE10105914C1 (de) |
WO (1) | WO2002065557A1 (de) |
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WO2003054970A1 (de) * | 2001-12-11 | 2003-07-03 | Siemens Aktiengesellschaft | Organischer feld-effekt-transistor mit verschobener schwellwertspannung und verwendung dazu |
WO2004100281A1 (en) * | 2003-05-12 | 2004-11-18 | Cambridge University Technical Services Limited | Polymer transistor |
WO2005006449A1 (ja) * | 2003-07-10 | 2005-01-20 | Matsushita Electric Industrial Co., Ltd. | 有機薄膜トランジスタとその製造方法、及びそれを用いたアクティブマトリクス型のディスプレイと無線識別タグ |
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WO2005008743A2 (en) * | 2003-07-12 | 2005-01-27 | Hewlett-Packard Development Company, L.P. | A semiconductor device with metallic electrodes and a method for use in forming such a device |
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US6903958B2 (en) | 2000-09-13 | 2005-06-07 | Siemens Aktiengesellschaft | Method of writing to an organic memory |
WO2005069399A1 (de) * | 2004-01-14 | 2005-07-28 | Polyic Gmbh & Co. Kg | Organischer transistor mit selbstjustierender gate-elektrode und verfahren zu dessen herstellung |
JP2005303270A (ja) * | 2004-03-19 | 2005-10-27 | Mitsubishi Chemicals Corp | 電界効果トランジスタ |
JP2007500452A (ja) * | 2003-05-20 | 2007-01-11 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 電界効果トランジスタ構成および電界効果トランジスタ構成の製造方法 |
US7564053B2 (en) * | 2004-09-22 | 2009-07-21 | Electronics And Telecommunications Research Institute | Photo-reactive organic polymeric gate insulating layer composition and organic thin film transistor using the same |
US7582896B2 (en) * | 2003-08-29 | 2009-09-01 | Infineon Technologies Ag | Integrated circuit comprising an organic semiconductor, and method for the production of an integrated circuit |
US7678857B2 (en) | 2003-09-03 | 2010-03-16 | Polyic Gmbh & Co. Kg | Polymer mixtures for printed polymer electronic circuits |
US7724550B2 (en) | 2004-12-23 | 2010-05-25 | Polyic Gmbh & Co. Kg | Organic rectifier |
US7786818B2 (en) | 2004-12-10 | 2010-08-31 | Polyic Gmbh & Co. Kg | Electronic component comprising a modulator |
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Also Published As
Publication number | Publication date |
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DE10105914C1 (de) | 2002-10-10 |
JP2004518305A (ja) | 2004-06-17 |
EP1358684A1 (de) | 2003-11-05 |
US7238961B2 (en) | 2007-07-03 |
US20040219460A1 (en) | 2004-11-04 |
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