WO2002065489A3 - Magnetically sensitive layer array - Google Patents

Magnetically sensitive layer array Download PDF

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Publication number
WO2002065489A3
WO2002065489A3 PCT/DE2002/000137 DE0200137W WO02065489A3 WO 2002065489 A3 WO2002065489 A3 WO 2002065489A3 DE 0200137 W DE0200137 W DE 0200137W WO 02065489 A3 WO02065489 A3 WO 02065489A3
Authority
WO
WIPO (PCT)
Prior art keywords
sensitive layer
magnetically sensitive
layer array
array
intermediate layer
Prior art date
Application number
PCT/DE2002/000137
Other languages
German (de)
French (fr)
Other versions
WO2002065489A2 (en
Inventor
Peter Schmollngruber
Henrik Siegle
Martin Freitag
Original Assignee
Bosch Gmbh Robert
Peter Schmollngruber
Henrik Siegle
Martin Freitag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert, Peter Schmollngruber, Henrik Siegle, Martin Freitag filed Critical Bosch Gmbh Robert
Publication of WO2002065489A2 publication Critical patent/WO2002065489A2/en
Publication of WO2002065489A3 publication Critical patent/WO2002065489A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/325—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being noble metal

Abstract

The invention relates to a magnetically sensitive layer array (10, 20) with improved temperature and long-term stability for use in an GMR sensor element. Said array has at least two superimposed magnetic layers (14, 16, 18), a non-magnetic, copper-containing intermediate layer (15) that contains at least one precious metal being placed between said layers. The intermediate layer is particularly made of CuAgAu.
PCT/DE2002/000137 2001-02-09 2002-01-18 Magnetically sensitive layer array WO2002065489A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2001105894 DE10105894A1 (en) 2001-02-09 2001-02-09 Magnetically sensitive layer arrangement
DE10105894.2 2001-02-09

Publications (2)

Publication Number Publication Date
WO2002065489A2 WO2002065489A2 (en) 2002-08-22
WO2002065489A3 true WO2002065489A3 (en) 2002-10-10

Family

ID=7673401

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/000137 WO2002065489A2 (en) 2001-02-09 2002-01-18 Magnetically sensitive layer array

Country Status (2)

Country Link
DE (1) DE10105894A1 (en)
WO (1) WO2002065489A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10140606B8 (en) * 2001-08-18 2005-03-31 Robert Bosch Gmbh Integrated memory and sensing element based on the GMR effect
DE102004032482B4 (en) 2004-07-05 2008-01-31 Infineon Technologies Ag Sensor and method for detecting deformation

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0685746A2 (en) * 1994-05-30 1995-12-06 Sony Corporation Magneto-resistance effect device with improved thermal resistance
US5549978A (en) * 1992-10-30 1996-08-27 Kabushiki Kaisha Toshiba Magnetoresistance effect element
US5569544A (en) * 1992-11-16 1996-10-29 Nonvolatile Electronics, Incorporated Magnetoresistive structure comprising ferromagnetic thin films and intermediate layers of less than 30 angstroms formed of alloys having immiscible components
US5738938A (en) * 1995-03-31 1998-04-14 Mitsubishi Denki Kabushiki Kaisha Magnetoelectric transducer
WO1999058994A1 (en) * 1998-05-11 1999-11-18 Koninklijke Philips Electronics N.V. Magnetic multilayer sensor
US6124711A (en) * 1996-01-19 2000-09-26 Fujitsu Limited Magnetic sensor using tunnel resistance to detect an external magnetic field

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4104951A1 (en) * 1991-02-18 1992-08-20 Siemens Ag MULTILAYER SYSTEM FOR MAGNETORESISTIVE SENSORS AND METHOD FOR THE PRODUCTION THEREOF
US5277991A (en) * 1991-03-08 1994-01-11 Matsushita Electric Industrial Co., Ltd. Magnetoresistive materials
JPH0779034A (en) * 1993-04-13 1995-03-20 Matsushita Electric Ind Co Ltd Magnetoresistive effect device
US5585199A (en) * 1993-09-09 1996-12-17 Kabushiki Kaisha Toshiba Magnetoresistance effect head
DE19844890C2 (en) * 1998-09-30 2002-02-14 Infineon Technologies Ag Thin-layer structure of a magnetic field sensitive sensor with a magnetoresistive multilayer system with spin dependence of the electron scattering

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5549978A (en) * 1992-10-30 1996-08-27 Kabushiki Kaisha Toshiba Magnetoresistance effect element
US5569544A (en) * 1992-11-16 1996-10-29 Nonvolatile Electronics, Incorporated Magnetoresistive structure comprising ferromagnetic thin films and intermediate layers of less than 30 angstroms formed of alloys having immiscible components
EP0685746A2 (en) * 1994-05-30 1995-12-06 Sony Corporation Magneto-resistance effect device with improved thermal resistance
US5738938A (en) * 1995-03-31 1998-04-14 Mitsubishi Denki Kabushiki Kaisha Magnetoelectric transducer
US6124711A (en) * 1996-01-19 2000-09-26 Fujitsu Limited Magnetic sensor using tunnel resistance to detect an external magnetic field
WO1999058994A1 (en) * 1998-05-11 1999-11-18 Koninklijke Philips Electronics N.V. Magnetic multilayer sensor

Also Published As

Publication number Publication date
DE10105894A1 (en) 2002-09-05
WO2002065489A2 (en) 2002-08-22

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