WO2002058152A3 - Electronic circuit device and method for manufacturing the same - Google Patents

Electronic circuit device and method for manufacturing the same Download PDF

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Publication number
WO2002058152A3
WO2002058152A3 PCT/JP2002/000167 JP0200167W WO02058152A3 WO 2002058152 A3 WO2002058152 A3 WO 2002058152A3 JP 0200167 W JP0200167 W JP 0200167W WO 02058152 A3 WO02058152 A3 WO 02058152A3
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WO
WIPO (PCT)
Prior art keywords
electronic circuit
circuit device
manufacturing
same
bumps
Prior art date
Application number
PCT/JP2002/000167
Other languages
French (fr)
Other versions
WO2002058152A2 (en
Inventor
Kazuhiro Nobori
Satoshi Ikeda
Yasushi Kato
Yasufumi Nakajima
Original Assignee
Matsushita Electric Ind Co Ltd
Kazuhiro Nobori
Satoshi Ikeda
Yasushi Kato
Yasufumi Nakajima
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd, Kazuhiro Nobori, Satoshi Ikeda, Yasushi Kato, Yasufumi Nakajima filed Critical Matsushita Electric Ind Co Ltd
Priority to US10/221,853 priority Critical patent/US6943443B2/en
Publication of WO2002058152A2 publication Critical patent/WO2002058152A2/en
Publication of WO2002058152A3 publication Critical patent/WO2002058152A3/en
Priority to US11/069,975 priority patent/US7208833B2/en

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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
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Abstract

Bumps (112) are formed to electrodes of semiconductor elements (111), and moreover the semiconductor elements with the bumps are electrically connected to metallic members (114) having installation members (114b), whereby wiring lines are eliminated. A stray inductance and a conduction resistance resulting from the wiring lines can be reduced. A conventional dented connector and a projecting connector are eliminated by connecting the installation members to a second circuit board, enabling the electronic circuit device of the power control system to be made compact.
PCT/JP2002/000167 2001-01-17 2002-01-15 Electronic circuit device and method for manufacturing the same WO2002058152A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/221,853 US6943443B2 (en) 2001-01-17 2002-01-15 Electronic circuit device including metallic member having installation members
US11/069,975 US7208833B2 (en) 2001-01-17 2005-03-03 Electronic circuit device having circuit board electrically connected to semiconductor element via metallic plate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001008823A JP3923258B2 (en) 2001-01-17 2001-01-17 Power control system electronic circuit device and manufacturing method thereof
JP2001-8823 2001-01-17

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US10/221,853 A-371-Of-International US6943443B2 (en) 2001-01-17 2002-01-15 Electronic circuit device including metallic member having installation members
US11/069,975 Division US7208833B2 (en) 2001-01-17 2005-03-03 Electronic circuit device having circuit board electrically connected to semiconductor element via metallic plate

Publications (2)

Publication Number Publication Date
WO2002058152A2 WO2002058152A2 (en) 2002-07-25
WO2002058152A3 true WO2002058152A3 (en) 2003-09-04

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JP (1) JP3923258B2 (en)
CN (2) CN100552947C (en)
TW (1) TW550979B (en)
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Families Citing this family (116)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4479121B2 (en) * 2001-04-25 2010-06-09 株式会社デンソー Manufacturing method of semiconductor device
US6677669B2 (en) * 2002-01-18 2004-01-13 International Rectifier Corporation Semiconductor package including two semiconductor die disposed within a common clip
US6873043B2 (en) * 2003-03-10 2005-03-29 Delphi Technologies, Inc. Electronic assembly having electrically-isolated heat-conductive structure
DE10316355C5 (en) * 2003-04-10 2008-03-06 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module with flexible external pin assignment
DE10333841B4 (en) * 2003-07-24 2007-05-10 Infineon Technologies Ag A method of producing a benefit having semiconductor device locations arranged in rows and columns and methods of making a semiconductor device
US7315081B2 (en) 2003-10-24 2008-01-01 International Rectifier Corporation Semiconductor device package utilizing proud interconnect material
JP4491244B2 (en) * 2004-01-07 2010-06-30 三菱電機株式会社 Power semiconductor device
JP4589009B2 (en) * 2004-01-09 2010-12-01 三菱電機株式会社 Power semiconductor device
DE102004025609B4 (en) * 2004-05-25 2010-12-09 Semikron Elektronik Gmbh & Co. Kg Arrangement in screw-type pressure contact with a power semiconductor module
US20070253167A1 (en) * 2004-07-26 2007-11-01 Chiang Kuo C Transparent substrate heat dissipater
US7885076B2 (en) * 2004-09-07 2011-02-08 Flextronics Ap, Llc Apparatus for and method of cooling molded electronic circuits
JP4338620B2 (en) 2004-11-01 2009-10-07 三菱電機株式会社 Semiconductor device and manufacturing method thereof
JP2006253183A (en) * 2005-03-08 2006-09-21 Hitachi Ltd Semiconductor power module
DE602006004437D1 (en) * 2005-03-30 2009-02-05 Nxp Bv CONNECTABLE HOUSING FOR A PORTABLE OBJECT
JP2006303006A (en) * 2005-04-18 2006-11-02 Yaskawa Electric Corp Power module
JP4489000B2 (en) * 2005-10-12 2010-06-23 株式会社東芝 Electronic timer and system LSI
US7989981B2 (en) * 2006-02-02 2011-08-02 Flextronics Ap, Llc Power adaptor and storage unit for portable devices
US7554188B2 (en) * 2006-04-13 2009-06-30 International Rectifier Corporation Low inductance bond-wireless co-package for high power density devices, especially for IGBTs and diodes
KR101203466B1 (en) * 2006-04-20 2012-11-21 페어차일드코리아반도체 주식회사 Power system module and method for fabricating the same
US20080105963A1 (en) * 2006-07-28 2008-05-08 Tessera, Inc. Stackable electronic device assembly
US7999369B2 (en) 2006-08-29 2011-08-16 Denso Corporation Power electronic package having two substrates with multiple semiconductor chips and electronic components
DE102006040838B4 (en) * 2006-08-31 2009-11-12 DENSO CORPORATION, Kariya-shi Electronic power package with two substrates with multiple semiconductor chips and electronic components
DE102007002342B3 (en) * 2007-01-16 2008-10-16 Friwo Mobile Power Gmbh Simplified primary-side drive circuit for the switch in a switching power supply
JP5285224B2 (en) * 2007-01-31 2013-09-11 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー Circuit equipment
US20080280463A1 (en) * 2007-05-09 2008-11-13 Mercury Computer Systems, Inc. Rugged Chip Packaging
US7973387B2 (en) * 2007-06-08 2011-07-05 Continental Automotive Systems Us, Inc. Insulated gate bipolar transistor
KR101194842B1 (en) * 2007-09-06 2012-10-25 삼성전자주식회사 An semiconductor package embedded Print circuit board
EP2051360B1 (en) * 2007-10-17 2016-09-21 Power Systems Technologies GmbH Control circuit for a primary controlled switching power supply with increased accuracy of voltage regulation and primary controlled switched mode power supply
JP4523632B2 (en) * 2007-12-11 2010-08-11 三菱電機株式会社 Semiconductor device
US8279646B1 (en) 2007-12-14 2012-10-02 Flextronics Ap, Llc Coordinated power sequencing to limit inrush currents and ensure optimum filtering
US9197155B2 (en) * 2007-12-28 2015-11-24 Onamba Co., Ltd. Terminal plate circuit
WO2009093335A1 (en) * 2008-01-25 2009-07-30 Fujitsu Limited Heat capacity control material and method of part mounting
US7808100B2 (en) * 2008-04-21 2010-10-05 Infineon Technologies Ag Power semiconductor module with pressure element and method for fabricating a power semiconductor module with a pressure element
JP4989552B2 (en) * 2008-05-08 2012-08-01 トヨタ自動車株式会社 Electronic components
DE102008023714B4 (en) * 2008-05-15 2011-01-20 Semikron Elektronik Gmbh & Co. Kg Arrangement with a main carrier and a printed circuit board with components
US8102678B2 (en) 2008-05-21 2012-01-24 Flextronics Ap, Llc High power factor isolated buck-type power factor correction converter
US8693213B2 (en) 2008-05-21 2014-04-08 Flextronics Ap, Llc Resonant power factor correction converter
DE102008027761A1 (en) * 2008-06-11 2009-11-19 Siemens Aktiengesellschaft Electronic component comprises semiconductor module and printed circuit board which is arranged above semiconductor module, where electrically conductive spring element is provided between semiconductor module and printed circuit board
US8531174B2 (en) * 2008-06-12 2013-09-10 Flextronics Ap, Llc AC-DC input adapter
JP5586866B2 (en) * 2008-09-29 2014-09-10 株式会社日立産機システム Power converter
CN101944851B (en) * 2009-05-07 2014-10-29 弗莱克斯电子有限责任公司 Energy recovery snubber circuit for power converters
US8040117B2 (en) * 2009-05-15 2011-10-18 Flextronics Ap, Llc Closed loop negative feedback system with low frequency modulated gain
TWI387090B (en) * 2009-06-05 2013-02-21 Walton Advanced Eng Inc Reverse staggered stack structure of integrated circuit module
US8891803B2 (en) 2009-06-23 2014-11-18 Flextronics Ap, Llc Notebook power supply with integrated subwoofer
US8289741B2 (en) 2010-01-14 2012-10-16 Flextronics Ap, Llc Line switcher for power converters
US8964413B2 (en) 2010-04-22 2015-02-24 Flextronics Ap, Llc Two stage resonant converter enabling soft-switching in an isolated stage
DE102010022562A1 (en) * 2010-06-02 2011-12-08 Vincotech Holdings S.à.r.l. An electrical power module and method for connecting an electrical power module to a circuit board and a heat sink
US20120008269A1 (en) * 2010-07-08 2012-01-12 David Gengler Protective cover for a mobile computing device, systems including protective covers, and associated methods
US11134580B2 (en) 2010-07-08 2021-09-28 Zagg Inc Protective cover for portable electronic device and associated systems and methods
US8488340B2 (en) 2010-08-27 2013-07-16 Flextronics Ap, Llc Power converter with boost-buck-buck configuration utilizing an intermediate power regulating circuit
US8441810B2 (en) 2010-11-09 2013-05-14 Flextronics Ap, Llc Cascade power system architecture
US8520410B2 (en) 2010-11-09 2013-08-27 Flextronics Ap, Llc Virtual parametric high side MOSFET driver
KR101343140B1 (en) * 2010-12-24 2013-12-19 삼성전기주식회사 3D power module package
JP5510432B2 (en) * 2011-02-28 2014-06-04 株式会社豊田自動織機 Semiconductor device
US8637981B2 (en) * 2011-03-30 2014-01-28 International Rectifier Corporation Dual compartment semiconductor package with temperature sensor
US8842450B2 (en) 2011-04-12 2014-09-23 Flextronics, Ap, Llc Power converter using multiple phase-shifting quasi-resonant converters
WO2012178168A2 (en) 2011-06-23 2012-12-27 Zagg Intellectual Property Holding Co., Inc. Accessory and support for electronic devices, systems including the same and methods
EP2728616B1 (en) 2011-06-29 2018-07-18 NGK Insulators, Ltd. Circuit board for peripheral circuit in high-capacity module and high-capacity module including peripheral circuit using circuit board
US9182177B2 (en) 2011-07-12 2015-11-10 Flextronics Ap, Llc Heat transfer system with integrated evaporator and condenser
FR2979177B1 (en) * 2011-08-19 2014-05-23 Valeo Sys Controle Moteur Sas POWER BLOCK FOR ELECTRIC VEHICLE INVERTER
TWI578453B (en) * 2011-12-12 2017-04-11 鴻海精密工業股份有限公司 Chip package and method of making the same
JP5665729B2 (en) * 2011-12-27 2015-02-04 三菱電機株式会社 Power semiconductor device
JP5709739B2 (en) * 2011-12-29 2015-04-30 三菱電機株式会社 Power semiconductor device
US20130188317A1 (en) * 2012-01-20 2013-07-25 Hsin-Yin Ho Heat sink and electronic device having the same
US9232630B1 (en) 2012-05-18 2016-01-05 Flextronics Ap, Llc Method of making an inlay PCB with embedded coin
US9276460B2 (en) 2012-05-25 2016-03-01 Flextronics Ap, Llc Power converter with noise immunity
EP2669936B1 (en) 2012-06-01 2018-02-14 Nexperia B.V. Discrete semiconductor device package and manufacturing method
US9203293B2 (en) 2012-06-11 2015-12-01 Power Systems Technologies Ltd. Method of suppressing electromagnetic interference emission
US9203292B2 (en) 2012-06-11 2015-12-01 Power Systems Technologies Ltd. Electromagnetic interference emission suppressor
US9366394B2 (en) 2012-06-27 2016-06-14 Flextronics Ap, Llc Automotive LED headlight cooling system
US9019726B2 (en) 2012-07-13 2015-04-28 Flextronics Ap, Llc Power converters with quasi-zero power consumption
US8743565B2 (en) 2012-07-27 2014-06-03 Flextronics Ap, Llc High power converter architecture
US9019724B2 (en) 2012-07-27 2015-04-28 Flextronics Ap, Llc High power converter architecture
US9287792B2 (en) 2012-08-13 2016-03-15 Flextronics Ap, Llc Control method to reduce switching loss on MOSFET
US9118253B2 (en) 2012-08-15 2015-08-25 Flextronics Ap, Llc Energy conversion architecture with secondary side control delivered across transformer element
US9318965B2 (en) 2012-10-10 2016-04-19 Flextronics Ap, Llc Method to control a minimum pulsewidth in a switch mode power supply
US9092712B2 (en) 2012-11-02 2015-07-28 Flextronics Ap, Llc Embedded high frequency RFID
US9605860B2 (en) 2012-11-02 2017-03-28 Flextronics Ap, Llc Energy saving-exhaust control and auto shut off system
US9660540B2 (en) 2012-11-05 2017-05-23 Flextronics Ap, Llc Digital error signal comparator
JP5975856B2 (en) * 2012-11-27 2016-08-23 三菱電機株式会社 Power semiconductor device
DE102012222959B4 (en) * 2012-12-12 2015-04-02 Semikron Elektronik Gmbh & Co. Kg Power component device
JP5716972B2 (en) * 2013-02-05 2015-05-13 株式会社デンソー Electronic component heat dissipation structure and method of manufacturing the same
CN104332448B (en) 2013-03-05 2018-12-04 弗莱克斯电子有限责任公司 Overflow access
US9323267B2 (en) 2013-03-14 2016-04-26 Flextronics Ap, Llc Method and implementation for eliminating random pulse during power up of digital signal controller
US9494658B2 (en) 2013-03-14 2016-11-15 Flextronics Ap, Llc Approach for generation of power failure warning signal to maximize useable hold-up time with AC/DC rectifiers
US9184668B2 (en) 2013-03-15 2015-11-10 Flextronics Ap, Llc Power management integrated circuit partitioning with dedicated primary side control winding
US8654553B1 (en) 2013-03-15 2014-02-18 Flextronics Ap, Llc Adaptive digital control of power factor correction front end
US9093911B2 (en) 2013-03-15 2015-07-28 Flextronics Ap, Llc Switching mode power converter using coded signal control
US9490651B2 (en) 2013-03-15 2016-11-08 Flextronics Ap, Llc Sweep frequency mode for magnetic resonant power transmission
JP6012533B2 (en) * 2013-04-05 2016-10-25 三菱電機株式会社 Power semiconductor device
CN103367303A (en) * 2013-07-04 2013-10-23 株洲南车时代电气股份有限公司 High-power IGBT (Insulated Gate Bipolar Transistor) module with integrated gate pole resistor layout
JP5999041B2 (en) * 2013-07-23 2016-09-28 株式会社デンソー Electronic equipment
US9521754B1 (en) 2013-08-19 2016-12-13 Multek Technologies Limited Embedded components in a substrate
US9801277B1 (en) 2013-08-27 2017-10-24 Flextronics Ap, Llc Bellows interconnect
US9053405B1 (en) 2013-08-27 2015-06-09 Flextronics Ap, Llc Printed RFID circuit
KR102143890B1 (en) 2013-10-15 2020-08-12 온세미컨덕터코리아 주식회사 Power module package and method for manufacturing the same
US9565748B2 (en) 2013-10-28 2017-02-07 Flextronics Ap, Llc Nano-copper solder for filling thermal vias
WO2015111691A1 (en) * 2014-01-27 2015-07-30 三菱電機株式会社 Electrode terminal, semiconductor device for electrical power, and method for manufacturing semiconductor device for electrical power
US9305874B2 (en) * 2014-04-13 2016-04-05 Infineon Technologies Ag Baseplate for an electronic module and method of manufacturing the same
US9621053B1 (en) 2014-08-05 2017-04-11 Flextronics Ap, Llc Peak power control technique for primary side controller operation in continuous conduction mode
US9661738B1 (en) 2014-09-03 2017-05-23 Flextronics Ap, Llc Embedded coins for HDI or SEQ laminations
DE102015200868A1 (en) * 2015-01-20 2016-07-21 Zf Friedrichshafen Ag control electronics
US10123603B1 (en) 2015-03-27 2018-11-13 Multek Technologies Limited Diffuse fiber optic lighting for luggage
CN105161467B (en) * 2015-08-14 2019-06-28 株洲南车时代电气股份有限公司 A kind of power module for electric car
US10321560B2 (en) 2015-11-12 2019-06-11 Multek Technologies Limited Dummy core plus plating resist restrict resin process and structure
US10064292B2 (en) 2016-03-21 2018-08-28 Multek Technologies Limited Recessed cavity in printed circuit board protected by LPI
US10712398B1 (en) 2016-06-21 2020-07-14 Multek Technologies Limited Measuring complex PCB-based interconnects in a production environment
WO2018180580A1 (en) * 2017-03-30 2018-10-04 三菱電機株式会社 Semiconductor device and power conversion device
US10784213B2 (en) * 2018-01-26 2020-09-22 Hong Kong Applied Science and Technology Research Institute Company Limited Power device package
US10991670B2 (en) * 2018-09-28 2021-04-27 Semiconductor Components Industries, Llc Semiconductor device assemblies including spacer with embedded semiconductor die
DE102019107855A1 (en) * 2019-03-27 2020-10-01 Infineon Technologies Ag Semiconductor housing and method for manufacturing a semiconductor housing
CN210246355U (en) * 2019-08-01 2020-04-03 深圳雾芯科技有限公司 Power supply device
CN111162015A (en) * 2019-12-20 2020-05-15 珠海格力电器股份有限公司 Intelligent power module and packaging method
JP6960984B2 (en) * 2019-12-26 2021-11-05 三菱電機株式会社 Electronic devices and their insulating members
US11562938B2 (en) * 2020-12-29 2023-01-24 Semiconductor Components Industries, Llc Spacer with pattern layout for dual side cooling power module
DE102022201016A1 (en) 2022-02-01 2023-08-03 Zf Friedrichshafen Ag Power module for a power converter with optimized signal pins

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0547877A2 (en) * 1991-12-16 1993-06-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor power module
US5365403A (en) * 1992-07-17 1994-11-15 Vlt Corporation Packaging electrical components
US6060772A (en) * 1997-06-30 2000-05-09 Kabushiki Kaisha Toshiba Power semiconductor module with a plurality of semiconductor chips

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4034468A (en) * 1976-09-03 1977-07-12 Ibm Corporation Method for making conduction-cooled circuit package
DE3303103A1 (en) 1983-01-31 1984-08-02 Siemens AG, 1000 Berlin und 8000 München Power semiconductor module and method of triggering it
JPH01217951A (en) * 1988-02-26 1989-08-31 Hitachi Ltd Semiconductor device
JPH02240953A (en) 1989-03-14 1990-09-25 Sharp Corp Semiconductor device
JPH0444256A (en) * 1990-06-07 1992-02-14 Hitachi Ltd Semiconductor device
CA2072377A1 (en) * 1991-07-12 1993-01-13 Masanori Nishiguchi Semiconductor chip module and method of manufacturing the same
JPH05129516A (en) * 1991-11-01 1993-05-25 Hitachi Ltd Semiconductor device
JP2936855B2 (en) * 1991-12-26 1999-08-23 富士電機株式会社 Power semiconductor device
JP2854757B2 (en) * 1992-06-17 1999-02-03 三菱電機株式会社 Semiconductor power module
JP2956363B2 (en) * 1992-07-24 1999-10-04 富士電機株式会社 Power semiconductor device
JPH06310564A (en) 1993-04-20 1994-11-04 Hitachi Ltd Semiconductor device
US5396403A (en) * 1993-07-06 1995-03-07 Hewlett-Packard Company Heat sink assembly with thermally-conductive plate for a plurality of integrated circuits on a substrate
US5578869A (en) * 1994-03-29 1996-11-26 Olin Corporation Components for housing an integrated circuit device
JP3022178B2 (en) 1994-06-21 2000-03-15 日産自動車株式会社 Power device chip mounting structure
KR100245971B1 (en) * 1995-11-30 2000-03-02 포만 제프리 엘 Heat sink assembly using adhesion promoting layer for bonding polymeric adhesive to metal and the method of making the same
JP3168901B2 (en) * 1996-02-22 2001-05-21 株式会社日立製作所 Power semiconductor module
JP3206717B2 (en) * 1996-04-02 2001-09-10 富士電機株式会社 Power semiconductor module
JPH113995A (en) 1997-06-12 1999-01-06 Toshiba Corp Semiconductor device
US6008536A (en) * 1997-06-23 1999-12-28 Lsi Logic Corporation Grid array device package including advanced heat transfer mechanisms
JP3220900B2 (en) 1997-06-24 2001-10-22 三菱電機株式会社 Power semiconductor module
US5909057A (en) * 1997-09-23 1999-06-01 Lsi Logic Corporation Integrated heat spreader/stiffener with apertures for semiconductor package
US6133634A (en) * 1998-08-05 2000-10-17 Fairchild Semiconductor Corporation High performance flip chip package
US6586845B1 (en) * 1998-10-28 2003-07-01 Shinko Electric Industries Co., Ltd. Semiconductor device module and a part thereof
JP2000174186A (en) * 1998-12-08 2000-06-23 Hitachi Ltd Semiconductor device and method for mounting the same
US6246583B1 (en) * 1999-03-04 2001-06-12 International Business Machines Corporation Method and apparatus for removing heat from a semiconductor device
JP2000261120A (en) 1999-03-05 2000-09-22 Origin Electric Co Ltd Mounting structure of semiconductor device and electronic apparatus using the same
FR2790905A1 (en) * 1999-03-09 2000-09-15 Sagem POWER ELECTRICAL COMPONENT MOUNTED BY BRAZING ON A SUPPORT AND ASSEMBLY METHOD THEREFOR
KR20010009735A (en) * 1999-07-13 2001-02-05 김영환 method for Silicon heat-sink and structure
US6472741B1 (en) * 2001-07-14 2002-10-29 Siliconware Precision Industries Co., Ltd. Thermally-enhanced stacked-die ball grid array semiconductor package and method of fabricating the same
US6573592B2 (en) * 2001-08-21 2003-06-03 Micron Technology, Inc. Semiconductor die packages with standard ball grid array footprint and method for assembling the same
KR100443399B1 (en) * 2001-10-25 2004-08-09 삼성전자주식회사 Semiconductor package having thermal interface material(TIM) formed void
KR20030045950A (en) * 2001-12-03 2003-06-12 삼성전자주식회사 Multi chip package comprising heat sinks
TWI255532B (en) * 2002-02-05 2006-05-21 Siliconware Precision Industries Co Ltd Flip-chip ball grid array semiconductor package with heat-dissipating device and method for fabricating the same
TWI284395B (en) * 2002-12-30 2007-07-21 Advanced Semiconductor Eng Thermal enhance MCM package

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0547877A2 (en) * 1991-12-16 1993-06-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor power module
US5365403A (en) * 1992-07-17 1994-11-15 Vlt Corporation Packaging electrical components
US6060772A (en) * 1997-06-30 2000-05-09 Kabushiki Kaisha Toshiba Power semiconductor module with a plurality of semiconductor chips

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US20050148237A1 (en) 2005-07-07
US6943443B2 (en) 2005-09-13

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