WO2002056376A3 - Method of integrating a heat spreader and a semiconductor, and package formed thereby - Google Patents

Method of integrating a heat spreader and a semiconductor, and package formed thereby Download PDF

Info

Publication number
WO2002056376A3
WO2002056376A3 PCT/US2001/051198 US0151198W WO02056376A3 WO 2002056376 A3 WO2002056376 A3 WO 2002056376A3 US 0151198 W US0151198 W US 0151198W WO 02056376 A3 WO02056376 A3 WO 02056376A3
Authority
WO
WIPO (PCT)
Prior art keywords
integrating
heat spreader
semiconductor
package formed
metal layer
Prior art date
Application number
PCT/US2001/051198
Other languages
French (fr)
Other versions
WO2002056376A2 (en
Inventor
Howard L Davidson
Richard Lytel
Original Assignee
Sun Microsystems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sun Microsystems Inc filed Critical Sun Microsystems Inc
Publication of WO2002056376A2 publication Critical patent/WO2002056376A2/en
Publication of WO2002056376A3 publication Critical patent/WO2002056376A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Die Bonding (AREA)

Abstract

A method of integrating a heat speader into a semiconductor package includes depositing an adhesion metal layer on the back of a wafer at low temperature. A heat transfer metal layer is subsequently deposited on the adhesion metal layer at low temperature to form a heat spreader.
PCT/US2001/051198 2000-11-17 2001-11-13 Method of integrating a heat spreader and a semiconductor, and package formed thereby WO2002056376A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/715,360 US6586279B1 (en) 2000-11-17 2000-11-17 Method of integrating a heat spreader and a semiconductor, and package formed thereby
US09/715,360 2000-11-17

Publications (2)

Publication Number Publication Date
WO2002056376A2 WO2002056376A2 (en) 2002-07-18
WO2002056376A3 true WO2002056376A3 (en) 2003-03-13

Family

ID=24873713

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/051198 WO2002056376A2 (en) 2000-11-17 2001-11-13 Method of integrating a heat spreader and a semiconductor, and package formed thereby

Country Status (2)

Country Link
US (1) US6586279B1 (en)
WO (1) WO2002056376A2 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW574750B (en) * 2001-06-04 2004-02-01 Siliconware Precision Industries Co Ltd Semiconductor packaging member having heat dissipation plate
US6797530B2 (en) * 2001-09-25 2004-09-28 Kabushiki Kaisha Toshiba Semiconductor device-manufacturing method for manufacturing semiconductor devices with improved heat radiating efficiency and similar in size to semiconductor elements
US7061022B1 (en) 2003-08-26 2006-06-13 United States Of America As Represented By The Secretary Of The Army Lateral heat spreading layers for epi-side up ridge waveguide semiconductor lasers
US7259458B2 (en) * 2004-08-18 2007-08-21 Advanced Micro Devices, Inc. Integrated circuit with increased heat transfer
US20060138643A1 (en) * 2004-12-28 2006-06-29 Daoqiang Lu One step capillary underfill integration for semiconductor packages
US20060275952A1 (en) * 2005-06-07 2006-12-07 General Electric Company Method for making electronic devices
US20060278370A1 (en) * 2005-06-08 2006-12-14 Uwe Rockenfeller Heat spreader for cooling electronic components
US20070080441A1 (en) * 2005-08-18 2007-04-12 Scott Kirkman Thermal expansion compensation graded IC package
KR100666919B1 (en) * 2005-12-20 2007-01-10 삼성전자주식회사 Package bonding sheet, semiconductor device having the same, multi-stacking package having the same, manufacturing method of the semiconductor device, and manufacturing method of the multi-stacking package
JP2008160019A (en) * 2006-12-26 2008-07-10 Shinko Electric Ind Co Ltd Electronic component
US9385060B1 (en) * 2014-07-25 2016-07-05 Altera Corporation Integrated circuit package with enhanced thermal conduction

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0194475A2 (en) * 1985-03-14 1986-09-17 Olin Corporation Semiconductor die attach system
DE4126766A1 (en) * 1990-10-04 1992-04-09 Mitsubishi Electric Corp SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
US5510956A (en) * 1993-11-24 1996-04-23 Fujitsu Limited Electronic part unit or assembly having a plurality of electronic parts enclosed within a metal enclosure member mounted on a wiring layer
US5773362A (en) * 1996-06-20 1998-06-30 International Business Machines Corporation Method of manufacturing an integrated ULSI heatsink
US5998238A (en) * 1994-10-26 1999-12-07 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3781522A (en) * 1972-03-27 1973-12-25 Gen Electric Thermochromic surface heating apparatus
US4034469A (en) * 1976-09-03 1977-07-12 Ibm Corporation Method of making conduction-cooled circuit package
DE3169519D1 (en) * 1980-06-21 1985-05-02 Lucas Ind Plc Semi-conductor power device assembly and method of manufacture thereof
JPH06209058A (en) * 1993-01-12 1994-07-26 Mitsubishi Electric Corp Semiconductor device, its manufacture, and its mounting method
US5336368A (en) * 1993-07-08 1994-08-09 General Electric Company Method for depositing conductive metal traces on diamond
US6020219A (en) * 1994-06-16 2000-02-01 Lucent Technologies Inc. Method of packaging fragile devices with a gel medium confined by a rim member
US6300167B1 (en) * 1994-12-12 2001-10-09 Motorola, Inc. Semiconductor device with flame sprayed heat spreading layer and method
US5631046A (en) * 1996-03-25 1997-05-20 Boudreaux; Paul J. Method of metallizing a diamond substrate without using a refractory metal
US5847929A (en) * 1996-06-28 1998-12-08 International Business Machines Corporation Attaching heat sinks directly to flip chips and ceramic chip carriers
US5956576A (en) * 1996-09-13 1999-09-21 International Business Machines Corporation Enhanced protection of semiconductors with dual surface seal
US5818107A (en) * 1997-01-17 1998-10-06 International Business Machines Corporation Chip stacking by edge metallization
US5869883A (en) * 1997-09-26 1999-02-09 Stanley Wang, President Pantronix Corp. Packaging of semiconductor circuit in pre-molded plastic package
US5981310A (en) * 1998-01-22 1999-11-09 International Business Machines Corporation Multi-chip heat-sink cap assembly
US6091603A (en) * 1999-09-30 2000-07-18 International Business Machines Corporation Customizable lid for improved thermal performance of modules using flip chips
US6232151B1 (en) * 1999-11-01 2001-05-15 General Electric Company Power electronic module packaging

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0194475A2 (en) * 1985-03-14 1986-09-17 Olin Corporation Semiconductor die attach system
DE4126766A1 (en) * 1990-10-04 1992-04-09 Mitsubishi Electric Corp SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
US5510956A (en) * 1993-11-24 1996-04-23 Fujitsu Limited Electronic part unit or assembly having a plurality of electronic parts enclosed within a metal enclosure member mounted on a wiring layer
US5998238A (en) * 1994-10-26 1999-12-07 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor device
US5773362A (en) * 1996-06-20 1998-06-30 International Business Machines Corporation Method of manufacturing an integrated ULSI heatsink

Also Published As

Publication number Publication date
US6586279B1 (en) 2003-07-01
WO2002056376A2 (en) 2002-07-18

Similar Documents

Publication Publication Date Title
WO2003064059A3 (en) Integration of titanium and titanium nitride layers
AU2430401A (en) Methods of fabricating gallium nitride layers on textured silicon substrates, and gallium nitride semiconductor structures fabricated thereby
WO2002040418A3 (en) Method of making coated articles and coated articles made thereby
WO2002056376A3 (en) Method of integrating a heat spreader and a semiconductor, and package formed thereby
WO2005050716A3 (en) High-temperature devices on insulator substrates
WO2004090938A3 (en) Thermal interconnect and interface systems, methods of production and uses thereof
WO2001073865A3 (en) Continuous processing of thin-film batteries and like devices
EP1415950A3 (en) Wafer-level package for micro-electro-mechanical systems
WO2005091820A3 (en) Selective bonding for forming a microvalve
TW358999B (en) Integrated high-performance decoupling capacitor
WO2007005832A3 (en) Reliant thermal barrier coating system and related methods and apparatus of making the same
EP1361616A4 (en) Compound semiconductor element based on group iii element nitride
EP0954015A3 (en) High throughput Al-Cu thin film sputtering process on small contact via
EP1394865A4 (en) Iii group nitride based semiconductor element and method for manufacture thereof
EP0992610A3 (en) Barrier coating on plastic substrates and process for its deposition
TW353194B (en) Coated deposition chamber equipment
WO2003062922A3 (en) Photomask and method for manufacturing the same
EP1238950A3 (en) Heat treatable low-E coated articles and methods of making same
EP1403912A4 (en) Method of producing iii nitride compound semiconductor
EP1220306A4 (en) Method of manufacturing semiconductor device
EP1320125A3 (en) Seed layer processes for mocvd of ferroelectric thin films on high-K gate oxides
EP1223607A4 (en) Substrate for transfer mask, transfer mask, and method of manufacture thereof
WO2002019363A3 (en) Pre-polycoating of glass substrates
WO2004109795A3 (en) Thermal interconnect system and method of production thereof
WO2003017341A3 (en) Methods of forming metal-comprising materials and capacitor electrodes; and capacitor constructions

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
AK Designated states

Kind code of ref document: A3

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP