WO2002056349A3 - Chamber for uniform substrate heating - Google Patents

Chamber for uniform substrate heating Download PDF

Info

Publication number
WO2002056349A3
WO2002056349A3 PCT/US2001/050262 US0150262W WO02056349A3 WO 2002056349 A3 WO2002056349 A3 WO 2002056349A3 US 0150262 W US0150262 W US 0150262W WO 02056349 A3 WO02056349 A3 WO 02056349A3
Authority
WO
WIPO (PCT)
Prior art keywords
chamber
substrate heating
uniform substrate
thermal profile
uniform thermal
Prior art date
Application number
PCT/US2001/050262
Other languages
French (fr)
Other versions
WO2002056349A2 (en
Inventor
Quanyuan Shang
Janine Kardokus
Akihiro Hosokawa
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to JP2002556921A priority Critical patent/JP2004527900A/en
Priority to KR1020037008591A priority patent/KR100614327B1/en
Priority to EP01998097A priority patent/EP1346400A2/en
Publication of WO2002056349A2 publication Critical patent/WO2002056349A2/en
Publication of WO2002056349A3 publication Critical patent/WO2002056349A3/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection

Abstract

Embodiments of the invention generally provide an apparatus and a method for providing a uniform thermal profile to a plurality of substrates during heat processing. In one embodiment, a cassette containing one or more heated substrate supports is moveably disposed within a heating chamber having an about uniform thermal profile therein to more uniformly heat the substrates.
PCT/US2001/050262 2000-12-29 2001-12-20 Chamber for uniform substrate heating WO2002056349A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002556921A JP2004527900A (en) 2000-12-29 2001-12-20 Chamber for heating the substrate uniformly
KR1020037008591A KR100614327B1 (en) 2000-12-29 2001-12-20 Chamber for uniform substrate heating
EP01998097A EP1346400A2 (en) 2000-12-29 2001-12-20 Chamber for uniform substrate heating

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US25903500P 2000-12-29 2000-12-29
US60/259,035 2000-12-29

Publications (2)

Publication Number Publication Date
WO2002056349A2 WO2002056349A2 (en) 2002-07-18
WO2002056349A3 true WO2002056349A3 (en) 2002-09-26

Family

ID=22983228

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/050262 WO2002056349A2 (en) 2000-12-29 2001-12-20 Chamber for uniform substrate heating

Country Status (7)

Country Link
US (2) US6765178B2 (en)
EP (1) EP1346400A2 (en)
JP (1) JP2004527900A (en)
KR (1) KR100614327B1 (en)
CN (1) CN1293600C (en)
TW (1) TW529066B (en)
WO (1) WO2002056349A2 (en)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6951804B2 (en) * 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
NO20023605D0 (en) * 2002-07-29 2002-07-29 Sumit Roy Method and apparatus for interconnecting two tubular members
US6896513B2 (en) 2002-09-12 2005-05-24 Applied Materials, Inc. Large area substrate processing system
US20040065656A1 (en) * 2002-10-04 2004-04-08 Makoto Inagawa Heated substrate support
US6916374B2 (en) * 2002-10-08 2005-07-12 Micron Technology, Inc. Atomic layer deposition methods and atomic layer deposition tools
WO2004061914A2 (en) * 2002-12-17 2004-07-22 Applied Materials, Inc. Chamber for uniform substrate heating
US20040226513A1 (en) * 2003-05-12 2004-11-18 Applied Materials, Inc. Chamber for uniform heating of large area substrates
US7727588B2 (en) * 2003-09-05 2010-06-01 Yield Engineering Systems, Inc. Apparatus for the efficient coating of substrates
US20070275570A1 (en) * 2004-01-20 2007-11-29 Hitachi Kokusai Electric Inc. Heat Treatment Apparatus
US20050223986A1 (en) * 2004-04-12 2005-10-13 Choi Soo Y Gas diffusion shower head design for large area plasma enhanced chemical vapor deposition
US8119210B2 (en) 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US7666323B2 (en) * 2004-06-09 2010-02-23 Veeco Instruments Inc. System and method for increasing the emissivity of a material
US20060105114A1 (en) * 2004-11-16 2006-05-18 White John M Multi-layer high quality gate dielectric for low-temperature poly-silicon TFTs
US20060182530A1 (en) * 2005-01-05 2006-08-17 Min-Hsu Wang Wafer loadlock chamber and wafer holder
JP2006229040A (en) * 2005-02-18 2006-08-31 Matsushita Electric Ind Co Ltd Method and apparatus for heat treatment
DE102005040741B4 (en) * 2005-08-26 2007-06-14 Asys Automatic Systems Gmbh & Co. Kg Machining plant of modular construction for flat substrates
US7901662B2 (en) * 2005-11-01 2011-03-08 Celanese International Corporation Steam generation apparatus and method
KR100748176B1 (en) * 2005-11-02 2007-08-10 아프로시스템 주식회사 Heat treatment equipment
US7678710B2 (en) 2006-03-09 2010-03-16 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
US7837838B2 (en) 2006-03-09 2010-11-23 Applied Materials, Inc. Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus
US7645710B2 (en) 2006-03-09 2010-01-12 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
US7312422B2 (en) * 2006-03-17 2007-12-25 Momentive Performance Materials Inc. Semiconductor batch heating assembly
CN101389914B (en) * 2006-03-23 2012-07-25 株式会社村田制作所 Heat treating furnace
JP5105396B2 (en) * 2006-04-12 2012-12-26 東京応化工業株式会社 Heat treatment device
US8741096B2 (en) * 2006-06-29 2014-06-03 Wonik Ips Co., Ltd. Apparatus for semiconductor processing
US7901509B2 (en) 2006-09-19 2011-03-08 Momentive Performance Materials Inc. Heating apparatus with enhanced thermal uniformity and method for making thereof
WO2008039845A2 (en) 2006-09-26 2008-04-03 Applied Materials, Inc. Fluorine plasma treatment of high-k gate stack for defect passivation
US8317449B2 (en) * 2007-03-05 2012-11-27 Applied Materials, Inc. Multiple substrate transfer robot
US20080220150A1 (en) * 2007-03-05 2008-09-11 Applied Materials, Inc. Microbatch deposition chamber with radiant heating
US20090004405A1 (en) * 2007-06-29 2009-01-01 Applied Materials, Inc. Thermal Batch Reactor with Removable Susceptors
US8709160B2 (en) * 2008-08-22 2014-04-29 United Technologies Corporation Deposition apparatus having thermal hood
JP5620090B2 (en) * 2008-12-15 2014-11-05 キヤノンアネルバ株式会社 Substrate processing apparatus, heat-treated substrate manufacturing method, and semiconductor device manufacturing method
JP2013523596A (en) * 2010-04-12 2013-06-17 エムイーエムシー・エレクトロニック・マテリアルズ・ソシエタ・ペル・アチオニ Bell jar for Siemens reactor including heat radiation shield
CN102222598B (en) * 2010-04-19 2015-04-08 圆益Ips股份有限公司 Substrate processing device
CN102300342A (en) * 2010-06-24 2011-12-28 北京北方微电子基地设备工艺研究中心有限责任公司 Support plate heating device and plasma processor using same
KR101234358B1 (en) * 2010-11-02 2013-02-28 에이피시스템 주식회사 Support unit and substrate treating apparatus with it
CN103094149A (en) * 2011-10-27 2013-05-08 沈阳芯源微电子设备有限公司 Roasting device used for preventing chip from warping and roasting method thereof
WO2013120779A1 (en) 2012-02-16 2013-08-22 Saint-Gobain Glass France Process box, arrangements and methods for processing coated substrates
US9581042B2 (en) 2012-10-30 2017-02-28 United Technologies Corporation Composite article having metal-containing layer with phase-specific seed particles and method therefor
KR101391304B1 (en) * 2012-11-06 2014-05-02 주식회사 제우스 Cable for high temperature and heat treatment device which used this
CN104599999A (en) * 2013-10-30 2015-05-06 北京北方微电子基地设备工艺研究中心有限责任公司 Heating chamber
US9915001B2 (en) 2014-09-03 2018-03-13 Silcotek Corp. Chemical vapor deposition process and coated article
CN105624633B (en) * 2014-10-28 2018-08-24 北京北方华创微电子装备有限公司 A kind of heating chamber and Pvd equipment
TW201639063A (en) * 2015-01-22 2016-11-01 應用材料股份有限公司 Batch heating and cooling chamber or loadlock
CN204434500U (en) * 2015-03-05 2015-07-01 京东方科技集团股份有限公司 A kind of evaporation support plate and evaporation coating device
US10876206B2 (en) 2015-09-01 2020-12-29 Silcotek Corp. Thermal chemical vapor deposition coating
CN106555159B (en) * 2015-09-28 2018-12-11 北京北方华创微电子装备有限公司 A kind of heating equipment and heating means of substrate
CN108028193B (en) * 2015-09-30 2022-04-22 东京毅力科创株式会社 Substrate processing apparatus and substrate processing method
JP6748491B2 (en) * 2016-06-27 2020-09-02 東京エレクトロン株式会社 Method for performing pretreatment for forming copper wiring in recess formed in substrate and processing apparatus
KR101910801B1 (en) * 2016-10-26 2019-01-07 세메스 주식회사 Apparatus and method for treating substrate
JP6296189B1 (en) * 2016-10-31 2018-03-20 日新イオン機器株式会社 Heating equipment, semiconductor manufacturing equipment
US11621180B2 (en) 2016-10-31 2023-04-04 Nissin Ion Equipment Co., Ltd. Heating device
CN206157224U (en) * 2016-11-24 2017-05-10 合肥京东方显示技术有限公司 Vacuum heating device
US10840086B2 (en) * 2018-04-27 2020-11-17 Applied Materials, Inc. Plasma enhanced CVD with periodic high voltage bias
CN108660301A (en) * 2018-06-28 2018-10-16 浙江俊荣五金工业有限公司 A kind of screw intelligence dehydrogenation device
JP7191678B2 (en) * 2018-12-27 2022-12-19 株式会社アルバック SUBSTRATE PROCESSING APPARATUS, CASSETTE REMOVAL METHOD OF SUBSTRATE PROCESSING APPARATUS
WO2020252306A1 (en) 2019-06-14 2020-12-17 Silcotek Corp. Nano-wire growth
KR20210018762A (en) * 2019-08-09 2021-02-18 에이에스엠 아이피 홀딩 비.브이. Temperature-controlled chemical delivery system and reactor system including same
US20240027295A1 (en) * 2022-07-19 2024-01-25 Applied Materials, Inc. Method and apparatus for lamp housing crack detection

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2298314A (en) * 1994-08-12 1996-08-28 Samsung Electronics Co Ltd Apparatus for rapid thermal processing
US5561735A (en) * 1994-08-30 1996-10-01 Vortek Industries Ltd. Rapid thermal processing apparatus and method
US5567152A (en) * 1994-04-12 1996-10-22 Tokyo Electron Limited Heat processing apparatus
US5850071A (en) * 1996-02-16 1998-12-15 Kokusai Electric Co., Ltd. Substrate heating equipment for use in a semiconductor fabricating apparatus
US6046439A (en) * 1996-06-17 2000-04-04 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
US6147334A (en) * 1998-06-30 2000-11-14 Marchi Associates, Inc. Laminated paddle heater and brazing process
US6151447A (en) * 1993-01-21 2000-11-21 Moore Technologies Rapid thermal processing apparatus for processing semiconductor wafers

Family Cites Families (220)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI118158B (en) 1999-10-15 2007-07-31 Asm Int Process for modifying the starting chemical in an ALD process
FI117944B (en) 1999-10-15 2007-04-30 Asm Int A method for growing transition metal nitride thin films
US3862397A (en) * 1972-03-24 1975-01-21 Applied Materials Tech Cool wall radiantly heated reactor
SE393967B (en) 1974-11-29 1977-05-31 Sateko Oy PROCEDURE AND PERFORMANCE OF LAYING BETWEEN THE STORAGE IN A LABOR PACKAGE
FI57975C (en) 1979-02-28 1980-11-10 Lohja Ab Oy OVER ANCHORING VIDEO UPDATE FOR AVAILABILITY
US4389973A (en) 1980-03-18 1983-06-28 Oy Lohja Ab Apparatus for performing growth of compound thin films
FI64878C (en) 1982-05-10 1984-01-10 Lohja Ab Oy KOMBINATIONSFILM FOER ISYNNERHET TUNNFILMELEKTROLUMINENSSTRUKTURER
JPS6065712A (en) 1983-09-20 1985-04-15 Toshiba Corp Formation of silicon oxide coating film
US5259881A (en) 1991-05-17 1993-11-09 Materials Research Corporation Wafer processing cluster tool batch preheating and degassing apparatus
JPH0766910B2 (en) 1984-07-26 1995-07-19 新技術事業団 Semiconductor single crystal growth equipment
US5693139A (en) 1984-07-26 1997-12-02 Research Development Corporation Of Japan Growth of doped semiconductor monolayers
US5294286A (en) 1984-07-26 1994-03-15 Research Development Corporation Of Japan Process for forming a thin film of silicon
GB2162207B (en) 1984-07-26 1989-05-10 Japan Res Dev Corp Semiconductor crystal growth apparatus
US5250148A (en) 1985-05-15 1993-10-05 Research Development Corporation Process for growing GaAs monocrystal film
JPS6291495A (en) 1985-10-15 1987-04-25 Nec Corp Vapor growth method for thin semiconductor film
US4829022A (en) 1985-12-09 1989-05-09 Nippon Telegraph And Telephone Corporation Method for forming thin films of compound semiconductors by flow rate modulation epitaxy
US4917556A (en) 1986-04-28 1990-04-17 Varian Associates, Inc. Modular wafer transport and processing system
US4838983A (en) 1986-07-03 1989-06-13 Emcore, Inc. Gas treatment apparatus and method
US4767494A (en) 1986-07-04 1988-08-30 Nippon Telegraph & Telephone Corporation Preparation process of compound semiconductor
JPH0834180B2 (en) 1986-08-26 1996-03-29 セイコー電子工業株式会社 Method for growing compound semiconductor thin film
JPH0810211B2 (en) 1986-09-05 1996-01-31 日本碍子株式会社 Gas sensor and manufacturing method thereof
JPH0639357B2 (en) 1986-09-08 1994-05-25 新技術開発事業団 Method for growing element semiconductor single crystal thin film
US5246536A (en) 1986-09-08 1993-09-21 Research Development Corporation Of Japan Method for growing single crystal thin films of element semiconductor
JP2587623B2 (en) 1986-11-22 1997-03-05 新技術事業団 Epitaxial crystal growth method for compound semiconductor
JP2929291B2 (en) 1986-12-04 1999-08-03 セイコーインスツルメンツ株式会社 Method of manufacturing insulated gate field effect transistor
US5000113A (en) 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US4951601A (en) 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
US5882165A (en) 1986-12-19 1999-03-16 Applied Materials, Inc. Multiple chamber integrated process system
US5923985A (en) 1987-01-05 1999-07-13 Seiko Instruments Inc. MOS field effect transistor and its manufacturing method
DE3704505A1 (en) 1987-02-13 1988-08-25 Leybold Ag INSERT UNIT FOR VACUUM SYSTEMS
JPH0727861B2 (en) 1987-03-27 1995-03-29 富士通株式会社 Method for growing group III compound semiconductor crystal
JPH0812844B2 (en) 1987-03-27 1996-02-07 日本電気株式会社 (III) -Group V compound semiconductor and method for forming the same
US5348911A (en) 1987-06-30 1994-09-20 Aixtron Gmbh Material-saving process for fabricating mixed crystals
DE3721637A1 (en) 1987-06-30 1989-01-12 Aixtron Gmbh GAS INLET FOR A MULTIPLE DIFFERENT REACTION GAS IN REACTION VESSELS
JPH0666274B2 (en) 1987-07-01 1994-08-24 日本電気株式会社 (III) -Method for forming group V compound semiconductor
US4840921A (en) 1987-07-01 1989-06-20 Nec Corporation Process for the growth of III-V group compound semiconductor crystal on a Si substrate
FI81926C (en) 1987-09-29 1990-12-10 Nokia Oy Ab FOERFARANDE FOER UPPBYGGNING AV GAAS-FILMER PAO SI- OCH GAAS-SUBSTRATER.
DE3743938C2 (en) 1987-12-23 1995-08-31 Cs Halbleiter Solartech Process for atomic layer epitaxy growth of a III / V compound semiconductor thin film
FR2626110A1 (en) 1988-01-19 1989-07-21 Thomson Csf Process for producing a layer of a superconductive material by epitaxy
US5166092A (en) 1988-01-28 1992-11-24 Fujitsu Limited Method of growing compound semiconductor epitaxial layer by atomic layer epitaxy
US5130269A (en) 1988-04-27 1992-07-14 Fujitsu Limited Hetero-epitaxially grown compound semiconductor substrate and a method of growing the same
DE3851701T2 (en) 1988-06-03 1995-03-30 Ibm Process for the production of artificial high-temperature superconductors with a multilayer structure.
US4927670A (en) 1988-06-22 1990-05-22 Georgia Tech Research Corporation Chemical vapor deposition of mixed metal oxide coatings
US5234561A (en) 1988-08-25 1993-08-10 Hauzer Industries Bv Physical vapor deposition dual coating process
US4931132A (en) 1988-10-07 1990-06-05 Bell Communications Research, Inc. Optical control of deposition of crystal monolayers
US5013683A (en) 1989-01-23 1991-05-07 The Regents Of The University Of California Method for growing tilted superlattices
JPH0824191B2 (en) 1989-03-17 1996-03-06 富士通株式会社 Thin film transistor
US5186718A (en) 1989-05-19 1993-02-16 Applied Materials, Inc. Staged-vacuum wafer processing system and method
EP0413982B1 (en) 1989-07-27 1997-05-14 Junichi Nishizawa Impurity doping method with adsorbed diffusion source
US5028565A (en) 1989-08-25 1991-07-02 Applied Materials, Inc. Process for CVD deposition of tungsten layer on semiconductor wafer
JP2926798B2 (en) 1989-11-20 1999-07-28 国際電気株式会社 Continuous processing etching method and apparatus
EP0430274A3 (en) 1989-12-01 1993-03-24 Seiko Instruments Inc. Method of producing bipolar transistor
FI84562C (en) 1990-01-16 1991-12-27 Neste Oy FARING EQUIPMENT FOR THE FRAME STATION OF HETEROGENE CATALYSTATORS.
US5290748A (en) 1990-01-16 1994-03-01 Neste Oy Polymerization catalyst for olefines
FI87892C (en) 1991-07-16 1993-03-10 Neste Oy METHOD OF FREQUENCY CONTAINER WITH METAL HALF
US5338389A (en) 1990-01-19 1994-08-16 Research Development Corporation Of Japan Method of epitaxially growing compound crystal and doping method therein
JPH07105497B2 (en) 1990-01-31 1995-11-13 新技術事業団 Semiconductor device and manufacturing method thereof
JP2822536B2 (en) 1990-02-14 1998-11-11 住友電気工業株式会社 Method for forming cubic boron nitride thin film
US5316615A (en) 1990-03-23 1994-05-31 International Business Machines Corporation Surfactant-enhanced epitaxy
US5173474A (en) 1990-04-18 1992-12-22 Xerox Corporation Silicon substrate having an epitaxial superconducting layer thereon and method of making same
JPH042699A (en) 1990-04-18 1992-01-07 Mitsubishi Electric Corp Growing of crystal
US5091320A (en) 1990-06-15 1992-02-25 Bell Communications Research, Inc. Ellipsometric control of material growth
US5225366A (en) 1990-06-22 1993-07-06 The United States Of America As Represented By The Secretary Of The Navy Apparatus for and a method of growing thin films of elemental semiconductors
DE4027628A1 (en) 1990-08-31 1992-03-05 Wolters Peter Fa DEVICE FOR CONTROLLING OR CONTROLLING LAEPP, HONING OR POLISHING MACHINES
US5483919A (en) 1990-08-31 1996-01-16 Nippon Telegraph And Telephone Corporation Atomic layer epitaxy method and apparatus
US5085885A (en) 1990-09-10 1992-02-04 University Of Delaware Plasma-induced, in-situ generation, transport and use or collection of reactive precursors
US5286296A (en) 1991-01-10 1994-02-15 Sony Corporation Multi-chamber wafer process equipment having plural, physically communicating transfer means
US5705224A (en) 1991-03-20 1998-01-06 Kokusai Electric Co., Ltd. Vapor depositing method
US5316793A (en) 1992-07-27 1994-05-31 Texas Instruments Incorporated Directed effusive beam atomic layer epitaxy system and method
US5270247A (en) 1991-07-12 1993-12-14 Fujitsu Limited Atomic layer epitaxy of compound semiconductor
JP2964713B2 (en) 1991-07-24 1999-10-18 松下電器産業株式会社 Magnetic position detector
US6001669A (en) 1991-09-09 1999-12-14 Philips Electronics North America Corporation Method for producing II-VI compound semiconductor epitaxial layers having low defects
US5311055A (en) 1991-11-22 1994-05-10 The United States Of America As Represented By The Secretary Of The Navy Trenched bipolar transistor structures
JP2987379B2 (en) 1991-11-30 1999-12-06 科学技術振興事業団 Method for epitaxial growth of semiconductor crystal
US5336324A (en) 1991-12-04 1994-08-09 Emcore Corporation Apparatus for depositing a coating on a substrate
US5397428A (en) 1991-12-20 1995-03-14 The University Of North Carolina At Chapel Hill Nucleation enhancement for chemical vapor deposition of diamond
US5256244A (en) 1992-02-10 1993-10-26 General Electric Company Production of diffuse reflective coatings by atomic layer epitaxy
US5480818A (en) 1992-02-10 1996-01-02 Fujitsu Limited Method for forming a film and method for manufacturing a thin film transistor
US5458084A (en) 1992-04-16 1995-10-17 Moxtek, Inc. X-ray wave diffraction optics constructed by atomic layer epitaxy
RU94046132A (en) 1992-05-22 1996-09-27 Миннесота Майнинг энд Мануфакчуринг Компани (US) Method for controlling molecular beam epitaxial system in manufacturing electric fluorescent devices around semiconductor compound ii-vi and laser diodes ii-vi
US5278435A (en) 1992-06-08 1994-01-11 Apa Optics, Inc. High responsivity ultraviolet gallium nitride detector
FI91422C (en) 1992-06-18 1994-06-27 Mikrokemia Oy Process and apparatus for supplying liquid reagents to a chemical reactor
JPH0750690B2 (en) 1992-08-21 1995-05-31 日本電気株式会社 Method and apparatus for epitaxial growth of semiconductor crystal using halide
JP3405466B2 (en) 1992-09-17 2003-05-12 富士通株式会社 Fluid switching valve and semiconductor device manufacturing apparatus
US5532511A (en) 1992-10-23 1996-07-02 Research Development Corp. Of Japan Semiconductor device comprising a highspeed static induction transistor
US5455072A (en) 1992-11-18 1995-10-03 Bension; Rouvain M. Initiation and bonding of diamond and other thin films
JPH06177349A (en) 1992-12-02 1994-06-24 Matsushita Electric Ind Co Ltd High density dram and manufacture thereof
US5607009A (en) 1993-01-28 1997-03-04 Applied Materials, Inc. Method of heating and cooling large area substrates and apparatus therefor
JP3265042B2 (en) 1993-03-18 2002-03-11 東京エレクトロン株式会社 Film formation method
JP3124861B2 (en) 1993-03-24 2001-01-15 富士通株式会社 Thin film growth method and semiconductor device manufacturing method
US5443647A (en) 1993-04-28 1995-08-22 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for depositing a refractory thin film by chemical vapor deposition
US5330610A (en) 1993-05-28 1994-07-19 Martin Marietta Energy Systems, Inc. Method of digital epilaxy by externally controlled closed-loop feedback
JPH0729897A (en) 1993-06-25 1995-01-31 Nec Corp Manufacture of semiconductor device
US6130147A (en) 1994-04-07 2000-10-10 Sdl, Inc. Methods for forming group III-V arsenide-nitride semiconductor materials
JP3181171B2 (en) 1994-05-20 2001-07-03 シャープ株式会社 Vapor phase growth apparatus and vapor phase growth method
US5665640A (en) 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
JP3008782B2 (en) 1994-07-15 2000-02-14 信越半導体株式会社 Vapor phase growth method and apparatus
US5796116A (en) 1994-07-27 1998-08-18 Sharp Kabushiki Kaisha Thin-film semiconductor device including a semiconductor film with high field-effect mobility
TW295677B (en) 1994-08-19 1997-01-11 Tokyo Electron Co Ltd
US5641984A (en) 1994-08-19 1997-06-24 General Electric Company Hermetically sealed radiation imager
US5730801A (en) 1994-08-23 1998-03-24 Applied Materials, Inc. Compartnetalized substrate processing chamber
US5644128A (en) 1994-08-25 1997-07-01 Ionwerks Fast timing position sensitive detector
US6158446A (en) 1994-11-14 2000-12-12 Fsi International Ultra-low particle semiconductor cleaner
JPH08148431A (en) 1994-11-24 1996-06-07 Mitsubishi Electric Corp Mbe apparatus and gas branch-piping apparatus
FI97731C (en) 1994-11-28 1997-02-10 Mikrokemia Oy Method and apparatus for making thin films
FI97730C (en) 1994-11-28 1997-02-10 Mikrokemia Oy Equipment for the production of thin films
FI100409B (en) 1994-11-28 1997-11-28 Asm Int Method and apparatus for making thin films
WO1996018756A1 (en) 1994-12-16 1996-06-20 Nkt Research Center A/S A PA-CVD PROCESS FOR DEPOSITION OF A SOLID METAL-CONTAINING FILM ONTO A SUBSTRATE CONTAINING AT LEAST 50 % of Fe or WC
JP3288200B2 (en) 1995-06-09 2002-06-04 東京エレクトロン株式会社 Vacuum processing equipment
JPH0922896A (en) 1995-07-07 1997-01-21 Toshiba Corp Method of selective forming of metal film
KR100244041B1 (en) 1995-08-05 2000-02-01 엔도 마코토 Substrate processing apparatus
US5672054A (en) 1995-12-07 1997-09-30 Carrier Corporation Rotary compressor with reduced lubrication sensitivity
US6084302A (en) 1995-12-26 2000-07-04 Micron Technologies, Inc. Barrier layer cladding around copper interconnect lines
FI107533B (en) 1996-04-03 2001-08-31 Fortum Oil & Gas Oy Functional surfaces for conducting chemical reactions and processes for their preparation
US5667592A (en) 1996-04-16 1997-09-16 Gasonics International Process chamber sleeve with ring seals for isolating individual process modules in a common cluster
US5788799A (en) 1996-06-11 1998-08-04 Applied Materials, Inc. Apparatus and method for cleaning of semiconductor process chamber surfaces
US6062798A (en) 1996-06-13 2000-05-16 Brooks Automation, Inc. Multi-level substrate processing apparatus
US5747113A (en) 1996-07-29 1998-05-05 Tsai; Charles Su-Chang Method of chemical vapor deposition for producing layer variation by planetary susceptor rotation
US5830270A (en) 1996-08-05 1998-11-03 Lockheed Martin Energy Systems, Inc. CaTiO3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class
US5916365A (en) 1996-08-16 1999-06-29 Sherman; Arthur Sequential chemical vapor deposition
JP2923753B2 (en) 1996-08-21 1999-07-26 工業技術院長 Method for forming group III atomic layer
KR100216542B1 (en) 1996-08-27 1999-08-16 정선종 Multi-target driving apparatus for pulse laser depositing system
FI100758B (en) 1996-09-11 1998-02-13 Planar Internat Oy Ltd Methods to Form a Luminescence Layer of ZnS: Mn for Thin Film Electroluminescence Components
US5835677A (en) 1996-10-03 1998-11-10 Emcore Corporation Liquid vaporizer system and method
US5923056A (en) 1996-10-10 1999-07-13 Lucent Technologies Inc. Electronic components with doped metal oxide dielectric materials and a process for making electronic components with doped metal oxide dielectric materials
US5928389A (en) 1996-10-21 1999-07-27 Applied Materials, Inc. Method and apparatus for priority based scheduling of wafer processing within a multiple chamber semiconductor wafer processing tool
US5807792A (en) 1996-12-18 1998-09-15 Siemens Aktiengesellschaft Uniform distribution of reactants in a device layer
US6043177A (en) 1997-01-21 2000-03-28 University Technology Corporation Modification of zeolite or molecular sieve membranes using atomic layer controlled chemical vapor deposition
US6051286A (en) 1997-02-12 2000-04-18 Applied Materials, Inc. High temperature, high deposition rate process and apparatus for depositing titanium layers
US5855675A (en) 1997-03-03 1999-01-05 Genus, Inc. Multipurpose processing chamber for chemical vapor deposition processes
US6174377B1 (en) 1997-03-03 2001-01-16 Genus, Inc. Processing chamber for atomic layer deposition processes
US5879459A (en) 1997-08-29 1999-03-09 Genus, Inc. Vertically-stacked process reactor and cluster tool system for atomic layer deposition
JPH10308283A (en) 1997-03-04 1998-11-17 Denso Corp El element and its manufacture
US5866795A (en) 1997-03-17 1999-02-02 Applied Materials, Inc. Liquid flow rate estimation and verification by direct liquid measurement
US6026762A (en) 1997-04-23 2000-02-22 Applied Materials, Inc. Apparatus for improved remote microwave plasma source for use with substrate processing systems
US5851849A (en) 1997-05-22 1998-12-22 Lucent Technologies Inc. Process for passivating semiconductor laser structures with severe steps in surface topography
US6140237A (en) 1997-06-16 2000-10-31 Chartered Semiconductor Manufacturing Ltd. Damascene process for forming coplanar top surface of copper connector isolated by barrier layers in an insulating layer
US5882413A (en) 1997-07-11 1999-03-16 Brooks Automation, Inc. Substrate processing apparatus having a substrate transport with a front end extension and an internal substrate buffer
US5904565A (en) 1997-07-17 1999-05-18 Sharp Microelectronics Technology, Inc. Low resistance contact between integrated circuit metal levels and method for same
US6287965B1 (en) 1997-07-28 2001-09-11 Samsung Electronics Co, Ltd. Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor
KR100385946B1 (en) 1999-12-08 2003-06-02 삼성전자주식회사 Method for forming a metal layer by an atomic layer deposition and a semiconductor device with the metal layer as a barrier metal layer, an upper electrode, or a lower electrode of capacitor
KR100269306B1 (en) 1997-07-31 2000-10-16 윤종용 Integrate circuit device having buffer layer containing metal oxide stabilized by low temperature treatment and fabricating method thereof
US5904569A (en) 1997-09-03 1999-05-18 National Semiconductor Corporation Method for forming self-aligned vias in multi-metal integrated circuits
US5801634A (en) 1997-09-08 1998-09-01 Sony Corporation Signal tower controller
KR100274603B1 (en) 1997-10-01 2001-01-15 윤종용 Method and apparatus for fabricating semiconductor device
US6110556A (en) 1997-10-17 2000-08-29 Applied Materials, Inc. Lid assembly for a process chamber employing asymmetric flow geometries
KR100252049B1 (en) 1997-11-18 2000-04-15 윤종용 The atomic layer deposition method for fabricating aluminum layer
US5972430A (en) 1997-11-26 1999-10-26 Advanced Technology Materials, Inc. Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer
US6099904A (en) 1997-12-02 2000-08-08 Applied Materials, Inc. Low resistivity W using B2 H6 nucleation step
FI104383B (en) 1997-12-09 2000-01-14 Fortum Oil & Gas Oy Procedure for coating the inside of a plant
KR100269328B1 (en) 1997-12-31 2000-10-16 윤종용 Method for forming conductive layer using atomic layer deposition process
TW439151B (en) 1997-12-31 2001-06-07 Samsung Electronics Co Ltd Method for forming conductive layer using atomic layer deposition process
US6303523B2 (en) 1998-02-11 2001-10-16 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US6117244A (en) 1998-03-24 2000-09-12 Applied Materials, Inc. Deposition resistant lining for CVD chamber
US6316098B1 (en) 1998-03-27 2001-11-13 Yissum Research Development Company Of The Hebrew University Of Jerusalem Molecular layer epitaxy method and compositions
KR100267885B1 (en) 1998-05-18 2000-11-01 서성기 Deposition apparatus
KR100282853B1 (en) 1998-05-18 2001-04-02 서성기 Apparatus for thin film deposition using cyclic gas injection
US6025627A (en) 1998-05-29 2000-02-15 Micron Technology, Inc. Alternate method and structure for improved floating gate tunneling devices
FI105313B (en) 1998-06-03 2000-07-14 Planar Systems Oy Process for the preparation of thin film electroluminescence structures
NL1009327C2 (en) 1998-06-05 1999-12-10 Asm Int Method and device for transferring wafers.
US6086677A (en) 1998-06-16 2000-07-11 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
JP2000031387A (en) 1998-07-14 2000-01-28 Fuji Electric Co Ltd Manufacture of dielectric thin film capacitor
KR100275738B1 (en) 1998-08-07 2000-12-15 윤종용 Method for producing thin film using atomatic layer deposition
KR20000013654A (en) 1998-08-12 2000-03-06 윤종용 Capacitor having an al2o3/aln mixed dielectric layer by using an atomic layer deposition and a manufacturing method thereof
KR100327105B1 (en) 1998-08-14 2002-03-09 오길록 High luminance-phosphor and method for fabricating the same
US6291876B1 (en) 1998-08-20 2001-09-18 The United States Of America As Represented By The Secretary Of The Navy Electronic devices with composite atomic barrier film and process for making same
FI105643B (en) 1998-08-21 2000-09-15 Planar Systems Oy Thin-film electroluminescent device and method for its manufacture
KR20000022003A (en) 1998-09-10 2000-04-25 이경수 Method for forming three-components compound comprising metal and silicon
FI108375B (en) 1998-09-11 2002-01-15 Asm Microchemistry Oy Still for producing insulating oxide thin films
KR100273474B1 (en) 1998-09-14 2000-12-15 이경수 Gas supply apparatus of chemical vapor deposition apparatus
KR100331544B1 (en) 1999-01-18 2002-04-06 윤종용 Method for introducing gases into a reactor chamber and a shower head used therein
JP2995300B1 (en) 1999-02-03 1999-12-27 工業技術院長 Surface improvement method for machine element parts
US6200893B1 (en) 1999-03-11 2001-03-13 Genus, Inc Radical-assisted sequential CVD
US6305314B1 (en) 1999-03-11 2001-10-23 Genvs, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
KR100273473B1 (en) 1999-04-06 2000-11-15 이경수 Method for forming a thin film
KR100347379B1 (en) 1999-05-01 2002-08-07 주식회사 피케이엘 Atomic layer deposition apparatus for depositing multi substrate
FI118342B (en) 1999-05-10 2007-10-15 Asm Int Apparatus for making thin films
JP2000340883A (en) 1999-05-27 2000-12-08 Fujitsu Ltd Multiwavelength oscillating optical semiconductor device
US6124158A (en) 1999-06-08 2000-09-26 Lucent Technologies Inc. Method of reducing carbon contamination of a thin dielectric film by using gaseous organic precursors, inert gas, and ozone to react with carbon contaminants
JP2000353666A (en) 1999-06-11 2000-12-19 Matsushita Electric Ind Co Ltd Semiconductor thin film and manufacture thereof
JP4726369B2 (en) 1999-06-19 2011-07-20 エー・エス・エムジニテックコリア株式会社 Chemical vapor deposition reactor and thin film forming method using the same
US6071808A (en) 1999-06-23 2000-06-06 Lucent Technologies Inc. Method of passivating copper interconnects in a semiconductor
WO2000079019A1 (en) 1999-06-24 2000-12-28 Prasad Narhar Gadgil Apparatus for atomic layer chemical vapor deposition
KR100319494B1 (en) 1999-07-15 2002-01-09 김용일 Apparatus for Deposition of thin films on wafers through atomic layer epitaxial process
US6391785B1 (en) 1999-08-24 2002-05-21 Interuniversitair Microelektronica Centrum (Imec) Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
US6511539B1 (en) 1999-09-08 2003-01-28 Asm America, Inc. Apparatus and method for growth of a thin film
DE10049257B4 (en) 1999-10-06 2015-05-13 Samsung Electronics Co., Ltd. Process for thin film production by means of atomic layer deposition
FI117942B (en) 1999-10-14 2007-04-30 Asm Int Process for making oxide thin films
WO2001029280A1 (en) 1999-10-15 2001-04-26 Asm America, Inc. Deposition of transition metal carbides
WO2001029891A1 (en) 1999-10-15 2001-04-26 Asm America, Inc. Conformal lining layers for damascene metallization
AU1208201A (en) 1999-10-15 2001-04-30 Asm America, Inc. Method for depositing nanolaminate thin films on sensitive surfaces
US6203613B1 (en) 1999-10-19 2001-03-20 International Business Machines Corporation Atomic layer deposition with nitrate containing precursors
SG99871A1 (en) 1999-10-25 2003-11-27 Motorola Inc Method for fabricating a semiconductor structure including a metal oxide interface with silicon
KR20010047128A (en) 1999-11-18 2001-06-15 이경수 Method of vaporizing a liquid source and apparatus used therefor
FI118804B (en) 1999-12-03 2008-03-31 Asm Int Process for making oxide films
KR100330749B1 (en) 1999-12-17 2002-04-03 서성기 Thin film deposition apparatus for semiconductor
FI118474B (en) 1999-12-28 2007-11-30 Asm Int Apparatus for making thin films
FI118343B (en) 1999-12-28 2007-10-15 Asm Int Apparatus for making thin films
JP4817210B2 (en) 2000-01-06 2011-11-16 東京エレクトロン株式会社 Film forming apparatus and film forming method
JP3479020B2 (en) * 2000-01-28 2003-12-15 東京エレクトロン株式会社 Heat treatment equipment
JP4362919B2 (en) 2000-02-04 2009-11-11 株式会社デンソー Deposition method by atomic layer epitaxial growth method
JP4776054B2 (en) 2000-02-04 2011-09-21 株式会社デンソー Thin film formation method by atomic layer growth
KR100378871B1 (en) 2000-02-16 2003-04-07 주식회사 아펙스 showerhead apparatus for radical assisted deposition
US6492283B2 (en) 2000-02-22 2002-12-10 Asm Microchemistry Oy Method of forming ultrathin oxide layer
JP4211185B2 (en) 2000-02-29 2009-01-21 株式会社デンソー Glass substrate storage jig for CVD and ALE equipment
AU2001245388A1 (en) 2000-03-07 2001-09-17 Asm America, Inc. Graded thin films
JP4556282B2 (en) 2000-03-31 2010-10-06 株式会社デンソー Organic EL device and method for manufacturing the same
TW576873B (en) 2000-04-14 2004-02-21 Asm Int Method of growing a thin film onto a substrate
FI117978B (en) 2000-04-14 2007-05-15 Asm Int Method and apparatus for constructing a thin film on a substrate
KR100363088B1 (en) 2000-04-20 2002-12-02 삼성전자 주식회사 Method of manufacturing barrier metal layer using atomic layer deposition method
FI118805B (en) 2000-05-15 2008-03-31 Asm Int A method and configuration for introducing a gas phase reactant into a reaction chamber
JP2001328900A (en) 2000-05-15 2001-11-27 Denso Corp Method for forming thin film
KR100332313B1 (en) 2000-06-24 2002-04-12 서성기 Apparatus and method for depositing thin film on wafer
KR100332314B1 (en) 2000-06-24 2002-04-12 서성기 Reactor for depositing thin film on wafer
KR100444149B1 (en) 2000-07-22 2004-08-09 주식회사 아이피에스 ALD thin film depositin equipment cleaning method
KR100436941B1 (en) 2000-11-07 2004-06-23 주성엔지니어링(주) apparatus and method for depositing thin film
KR100434487B1 (en) 2001-01-17 2004-06-05 삼성전자주식회사 Shower head & film forming apparatus having the same
JP4680429B2 (en) 2001-06-26 2011-05-11 Okiセミコンダクタ株式会社 High speed reading control method in text-to-speech converter
TW539822B (en) 2001-07-03 2003-07-01 Asm Inc Source chemical container assembly
US6820570B2 (en) 2001-08-15 2004-11-23 Nobel Biocare Services Ag Atomic layer deposition reactor

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6151447A (en) * 1993-01-21 2000-11-21 Moore Technologies Rapid thermal processing apparatus for processing semiconductor wafers
US5567152A (en) * 1994-04-12 1996-10-22 Tokyo Electron Limited Heat processing apparatus
GB2298314A (en) * 1994-08-12 1996-08-28 Samsung Electronics Co Ltd Apparatus for rapid thermal processing
US5561735A (en) * 1994-08-30 1996-10-01 Vortek Industries Ltd. Rapid thermal processing apparatus and method
US5850071A (en) * 1996-02-16 1998-12-15 Kokusai Electric Co., Ltd. Substrate heating equipment for use in a semiconductor fabricating apparatus
US6046439A (en) * 1996-06-17 2000-04-04 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
US6147334A (en) * 1998-06-30 2000-11-14 Marchi Associates, Inc. Laminated paddle heater and brazing process

Also Published As

Publication number Publication date
US7022948B2 (en) 2006-04-04
KR100614327B1 (en) 2006-08-18
US20040255861A1 (en) 2004-12-23
US20020086260A1 (en) 2002-07-04
US6765178B2 (en) 2004-07-20
KR20030066760A (en) 2003-08-09
WO2002056349A2 (en) 2002-07-18
CN1293600C (en) 2007-01-03
JP2004527900A (en) 2004-09-09
CN1483218A (en) 2004-03-17
TW529066B (en) 2003-04-21
EP1346400A2 (en) 2003-09-24

Similar Documents

Publication Publication Date Title
WO2002056349A3 (en) Chamber for uniform substrate heating
MY151676A (en) Substrate support having dynamic temperature control
WO2004082821A3 (en) Processing system and method for thermally treating a substrate
EP1075015A3 (en) A method and apparatus for thermal control of a semiconductor substrate
WO2002071446A3 (en) Method and apparatus for active temperature control of susceptors
TW328631B (en) Susceptor, apparatus of heat-treating semiconductor wafer, and method of heat-treating the same
EP0306967A3 (en) Apparatus for performing heat treatment on semiconductor wafers
WO2001069656A3 (en) Localized heating and cooling of substrates
DE69800937T2 (en) DEVICE AND METHOD FOR CYCLIC SAMPLE PREPARATION AT DIFFERENT TEMPERATURES AND USE OF THE DEVICE
WO2004079786A3 (en) Apparatus and method for reducing impurities in a semiconductor material
AU3439597A (en) Furnace for heat treatments of glass sheets
WO2001018604A3 (en) Method and apparatus for thermal processing a photosensitive element
DE19880398T1 (en) Substrate temperature measuring device, substrate temperature measuring method, substrate heating method and heat treatment device
TWI267160B (en) Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
SG90167A1 (en) Method and apparatus for heating and cooling substrates
EP1258909A3 (en) Method and device for the heat treatment of substrates
WO2003032380A1 (en) Device and method for processing substrate
AU2003201758A1 (en) High-frequency heating apparatus and control method thereof
CA2363767A1 (en) Device and method for thermally treating substrates
HK1070985A1 (en) Method for thermally treating substrates
SE9504323D0 (en) Method and apparatus for hot isostatic pressing of details
AU2001296004A1 (en) Temperature measuring method, heat treating device and method, computer program,and radiation thermometer
EP1067587A3 (en) Thermally processing a substrate
HUP9900991A3 (en) Method and apparatus for the partial heating of articles, mainly of thin sheets
JP2001077041A5 (en)

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): CN JP KR SG

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

AK Designated states

Kind code of ref document: A3

Designated state(s): CN JP KR SG

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 1020037008591

Country of ref document: KR

Ref document number: 018213162

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 2002556921

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 2001998097

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1020037008591

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 2001998097

Country of ref document: EP

WWW Wipo information: withdrawn in national office

Ref document number: 2001998097

Country of ref document: EP

WWG Wipo information: grant in national office

Ref document number: 1020037008591

Country of ref document: KR