WO2002043155A3 - Bipolar transistor with lattice matched base layer - Google Patents

Bipolar transistor with lattice matched base layer Download PDF

Info

Publication number
WO2002043155A3
WO2002043155A3 PCT/US2001/044471 US0144471W WO0243155A3 WO 2002043155 A3 WO2002043155 A3 WO 2002043155A3 US 0144471 W US0144471 W US 0144471W WO 0243155 A3 WO0243155 A3 WO 0243155A3
Authority
WO
WIPO (PCT)
Prior art keywords
base layer
lattice matched
bipolar transistor
matched base
indium
Prior art date
Application number
PCT/US2001/044471
Other languages
French (fr)
Other versions
WO2002043155A2 (en
WO2002043155A9 (en
Inventor
Roger E Welser
Paul M Deluca
Noren Pan
Original Assignee
Kopin Corp
Roger E Welser
Paul M Deluca
Noren Pan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kopin Corp, Roger E Welser, Paul M Deluca, Noren Pan filed Critical Kopin Corp
Priority to JP2002544788A priority Critical patent/JP2004521485A/en
Priority to AU2002219895A priority patent/AU2002219895A1/en
Publication of WO2002043155A2 publication Critical patent/WO2002043155A2/en
Publication of WO2002043155A3 publication Critical patent/WO2002043155A3/en
Publication of WO2002043155A9 publication Critical patent/WO2002043155A9/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
    • H01L29/66318—Heterojunction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds

Abstract

A semiconductor material which has a high carbon dopant concentration and is composed of gallium, indium, arsenic and nitrogen is disclosed. The material is useful in forming the base layer of gallium arsenide based heterojunction bipolar transistors because it can be lattice matched to gallium arsenide by controlling the concentration of indium and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentration obtained.
PCT/US2001/044471 2000-11-27 2001-11-27 Bipolar transistor with lattice matched base layer WO2002043155A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002544788A JP2004521485A (en) 2000-11-27 2001-11-27 Bipolar transistor with lattice matched base layer
AU2002219895A AU2002219895A1 (en) 2000-11-27 2001-11-27 Bipolar transistor with lattice matched base layer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US25315900P 2000-11-27 2000-11-27
US60/253,159 2000-11-27

Publications (3)

Publication Number Publication Date
WO2002043155A2 WO2002043155A2 (en) 2002-05-30
WO2002043155A3 true WO2002043155A3 (en) 2002-08-29
WO2002043155A9 WO2002043155A9 (en) 2003-08-14

Family

ID=22959119

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/044471 WO2002043155A2 (en) 2000-11-27 2001-11-27 Bipolar transistor with lattice matched base layer

Country Status (4)

Country Link
US (2) US6750480B2 (en)
JP (1) JP2004521485A (en)
AU (1) AU2002219895A1 (en)
WO (1) WO2002043155A2 (en)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004521485A (en) 2000-11-27 2004-07-15 コピン コーポレーション Bipolar transistor with lattice matched base layer
US7345327B2 (en) 2000-11-27 2008-03-18 Kopin Corporation Bipolar transistor
US6847060B2 (en) * 2000-11-27 2005-01-25 Kopin Corporation Bipolar transistor with graded base layer
US6800879B2 (en) 2001-01-08 2004-10-05 Kopin Corporation Method of preparing indium phosphide heterojunction bipolar transistors
WO2003009396A2 (en) * 2001-07-20 2003-01-30 Microlink Devices, Inc. Algaas or ingap low turn-on voltage gaas-based heterojunction bipolar transistor
WO2003077284A2 (en) * 2002-03-04 2003-09-18 Yale University Heterojunction bipolar transistor having thinned base-collector depletion region
US6764926B2 (en) * 2002-03-25 2004-07-20 Agilent Technologies, Inc. Method for obtaining high quality InGaAsN semiconductor devices
JP4025227B2 (en) * 2002-03-29 2007-12-19 株式会社東芝 Semiconductor laminated substrate and optical semiconductor element
JP3936618B2 (en) * 2002-04-19 2007-06-27 住友化学株式会社 Thin film semiconductor epitaxial substrate and manufacturing method thereof
US7019383B2 (en) 2003-02-26 2006-03-28 Skyworks Solutions, Inc. Gallium arsenide HBT having increased performance and method for its fabrication
US7521292B2 (en) 2004-06-04 2009-04-21 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
US7799699B2 (en) 2004-06-04 2010-09-21 The Board Of Trustees Of The University Of Illinois Printable semiconductor structures and related methods of making and assembling
US7622367B1 (en) 2004-06-04 2009-11-24 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
US7807921B2 (en) * 2004-06-15 2010-10-05 The Boeing Company Multijunction solar cell having a lattice mismatched GrIII-GrV-X layer and a composition-graded buffer layer
US7566948B2 (en) 2004-10-20 2009-07-28 Kopin Corporation Bipolar transistor with enhanced base transport
US7932123B2 (en) 2006-09-20 2011-04-26 The Board Of Trustees Of The University Of Illinois Release strategies for making transferable semiconductor structures, devices and device components
JP5700750B2 (en) 2007-01-17 2015-04-15 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ Optical system manufactured by printing base assembly
US7900167B2 (en) * 2007-10-24 2011-03-01 International Business Machines Corporation Silicon germanium heterojunction bipolar transistor structure and method
TWI506775B (en) * 2007-04-30 2015-11-01 Ultratech Inc Silicon germanium heterojunction bipolar transistor structure and method
US7750371B2 (en) 2007-04-30 2010-07-06 International Business Machines Corporation Silicon germanium heterojunction bipolar transistor structure and method
US8552299B2 (en) 2008-03-05 2013-10-08 The Board Of Trustees Of The University Of Illinois Stretchable and foldable electronic devices
US8470701B2 (en) * 2008-04-03 2013-06-25 Advanced Diamond Technologies, Inc. Printable, flexible and stretchable diamond for thermal management
US8372726B2 (en) * 2008-10-07 2013-02-12 Mc10, Inc. Methods and applications of non-planar imaging arrays
US8097926B2 (en) * 2008-10-07 2012-01-17 Mc10, Inc. Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy
US8886334B2 (en) * 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
US8389862B2 (en) 2008-10-07 2013-03-05 Mc10, Inc. Extremely stretchable electronics
JP5646492B2 (en) * 2008-10-07 2014-12-24 エムシー１０ インコーポレイテッドＭｃ１０，Ｉｎｃ． Stretchable integrated circuit and device with sensor array
KR101706915B1 (en) 2009-05-12 2017-02-15 더 보드 오브 트러스티즈 오브 더 유니버시티 오브 일리노이 Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays
KR101649004B1 (en) * 2009-05-26 2016-08-17 스미또모 가가꾸 가부시키가이샤 Semiconductor substrate, process for producing semiconductor substrate, and electronic device
US9723122B2 (en) 2009-10-01 2017-08-01 Mc10, Inc. Protective cases with integrated electronics
US20110218756A1 (en) * 2009-10-01 2011-09-08 Mc10, Inc. Methods and apparatus for conformal sensing of force and/or acceleration at a person's head
US9936574B2 (en) 2009-12-16 2018-04-03 The Board Of Trustees Of The University Of Illinois Waterproof stretchable optoelectronics
US10441185B2 (en) 2009-12-16 2019-10-15 The Board Of Trustees Of The University Of Illinois Flexible and stretchable electronic systems for epidermal electronics
EP2513953B1 (en) 2009-12-16 2017-10-18 The Board of Trustees of the University of Illionis Electrophysiology using conformal electronics
KR101837481B1 (en) * 2010-03-17 2018-03-13 더 보드 오브 트러스티즈 오브 더 유니버시티 오브 일리노이 implantable biomedical devices on bioresorbable substrates
US9442285B2 (en) 2011-01-14 2016-09-13 The Board Of Trustees Of The University Of Illinois Optical component array having adjustable curvature
US9765934B2 (en) 2011-05-16 2017-09-19 The Board Of Trustees Of The University Of Illinois Thermally managed LED arrays assembled by printing
EP2712491B1 (en) 2011-05-27 2019-12-04 Mc10, Inc. Flexible electronic structure
EP2713863B1 (en) 2011-06-03 2020-01-15 The Board of Trustees of the University of Illionis Conformable actively multiplexed high-density surface electrode array for brain interfacing
JP5820402B2 (en) * 2011-06-30 2015-11-24 株式会社Ｊｏｌｅｄ THIN FILM TRANSISTOR DEVICE AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR DEVICE
FR2981195A1 (en) 2011-10-11 2013-04-12 Soitec Silicon On Insulator MULTI-JUNCTION IN A SEMICONDUCTOR DEVICE FORMED BY DIFFERENT DEPOSITION TECHNIQUES
WO2013058640A2 (en) 2011-10-20 2013-04-25 Zepeda Lopez Hector Manuel Method for the extraction, verification and counting of dialyzed leukocyte extract originating from shark spleen in order to obtain potentialized transfer factor, specifically designed for use as treatment against the disease known as asthma
CN104472023B (en) 2011-12-01 2018-03-27 伊利诺伊大学评议会 It is designed to undergo the transient state device of programmable transformation
KR20150004819A (en) 2012-03-30 2015-01-13 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 Appendage mountable electronic devices conformable to surfaces
JP5893800B2 (en) 2012-06-14 2016-03-23 スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. Related systems, devices, and methods including power amplifier modules
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
JP6233724B2 (en) 2013-03-19 2017-11-22 株式会社村田製作所 Heterojunction bipolar transistor
US10677647B2 (en) 2015-06-01 2020-06-09 The Board Of Trustees Of The University Of Illinois Miniaturized electronic systems with wireless power and near-field communication capabilities
EP3304130B1 (en) 2015-06-01 2021-10-06 The Board of Trustees of the University of Illinois Alternative approach to uv sensing
US10925543B2 (en) 2015-11-11 2021-02-23 The Board Of Trustees Of The University Of Illinois Bioresorbable silicon electronics for transient implants
JP2018010896A (en) 2016-07-11 2018-01-18 株式会社村田製作所 Heterojunction bipolar transistor

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4518979A (en) 1982-06-30 1985-05-21 International Business Machines Corporation Semiconductor transistor with graded base and collector
JPH0669222A (en) 1992-08-17 1994-03-11 Matsushita Electric Ind Co Ltd Hetero-junction bipolar transistor and its production
JP2771423B2 (en) 1993-05-20 1998-07-02 日本電気株式会社 Bipolar transistor
US5571732A (en) 1993-08-19 1996-11-05 Texas Instruments Incorporated Method for fabricating a bipolar transistor
JPH08162471A (en) 1994-12-01 1996-06-21 Furukawa Electric Co Ltd:The Heterojunction bipolar transistor
US5606185A (en) 1994-12-01 1997-02-25 Hughes Aircraft Company Parabolically graded base-collector double heterojunction bipolar transistor
KR0171376B1 (en) 1995-12-20 1999-03-30 양승택 Apitaxi forming method of compound semiconductor
JP2955986B2 (en) * 1996-05-22 1999-10-04 日本電気株式会社 Semiconductor optical modulator and method of manufacturing the same
US6285044B1 (en) 1997-01-08 2001-09-04 Telcordia Technologies, Inc. InP-based heterojunction bipolar transistor with reduced base-collector capacitance
US6232138B1 (en) 1997-12-01 2001-05-15 Massachusetts Institute Of Technology Relaxed InxGa(1-x)as buffers
US6150677A (en) 1998-02-19 2000-11-21 Sumitomo Electric Industries, Ltd. Method of crystal growth of compound semiconductor, compound semiconductor device and method of manufacturing the device
JP3628873B2 (en) 1998-04-28 2005-03-16 富士通株式会社 Semiconductor device and manufacturing method thereof
US6031256A (en) 1999-01-05 2000-02-29 National Science Council Of Republic Of China Wide voltage operation regime double heterojunction bipolar transistor
FR2795871B1 (en) 1999-07-01 2001-09-14 Picogiga Sa HETEROJUNCTION TRANSISTOR III-V, IN PARTICULAR HEMT FIELD-EFFECT TRANSISTOR OR BIPOLAR HETEROJUNCTION TRANSISTOR
US7074697B2 (en) * 1999-10-01 2006-07-11 The Regents Of The University Of California Doping-assisted defect control in compound semiconductors
US6765242B1 (en) * 2000-04-11 2004-07-20 Sandia Corporation Npn double heterostructure bipolar transistor with ingaasn base region
US20020102847A1 (en) * 2000-09-19 2002-08-01 Sharps Paul R. MOCVD-grown InGaAsN using efficient and novel precursor, tertibutylhydrazine, for optoelectronic and electronic device applications
US6847060B2 (en) * 2000-11-27 2005-01-25 Kopin Corporation Bipolar transistor with graded base layer
JP2004521485A (en) 2000-11-27 2004-07-15 コピン コーポレーション Bipolar transistor with lattice matched base layer

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
BHAT R ET AL: "Growth of GaAsN/GaAs, GaInAsN/GaAs and GaInAsN/GaAs quantum wells by low-pressure organometallic chemical vapor deposition", JOURNAL OF CRYSTAL GROWTH, NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, NL, vol. 195, no. 1-4, 15 December 1998 (1998-12-15), pages 427 - 437, XP004154298, ISSN: 0022-0248 *
CHANG P C ET AL: "INGAASN/ALGAAS P-N-P HETEROJUNCTION BIPOLAR TRANSISTOR", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 76, no. 19, 8 May 2000 (2000-05-08), pages 2788 - 2790, XP000950513, ISSN: 0003-6951 *
CHANG P C ET AL: "InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor", APPLIED PHYSICS LETTERS, 17 APRIL 2000, AIP, USA, vol. 76, no. 16, pages 2262 - 2264, XP002203036, ISSN: 0003-6951 *
KOHAMA Y ET AL: "Using carbon tetrachloride for carbon doping Al/sub x/Ga/sub 1-x/As grown by metalorganic chemical vapor deposition", JAPANESE JOURNAL OF APPLIED PHYSICS, PART 1 (REGULAR PAPERS & SHORT NOTES), JULY 1995, JAPAN, vol. 34, no. 7A, pages 3504 - 3505, XP002203037, ISSN: 0021-4922 *
LI N Y ET AL: "DC CHARACTERISTICS OF MOVPE-GROWN NPN INGAP/INGAASN DHBTS", ELECTRONICS LETTERS, IEE STEVENAGE, GB, vol. 36, no. 1, 6 January 2000 (2000-01-06), pages 81 - 83, XP000970554, ISSN: 0013-5194 *
SUGIURA H ET AL: "CHARACTERIZATION OF HEAVILY CARBON-DOPED INGAASP LAYERS GROWN BY CHEMICAL BEAM EPITAXY USING TETRABROMIDE", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 73, no. 17, 26 October 1998 (1998-10-26), pages 2482 - 2484, XP000788538, ISSN: 0003-6951 *
WELSER R E ET AL: "Low V/sub be/ GaInAsN base heterojunction bipolar transistors", JOINT SPECIAL ISSUE ON HETEROSTRUCTURE MICROELECTRONICS WITH TWHM 2000 (TOPICAL WORKSHOP ON HETEROSTRUCTURE MICROELECTRONICS 2000), KYOTO, JAPAN, 20-23 AUG. 2000, vol. E84-C, no. 10, IEICE Transactions on Electronics, Oct. 2001, Inst. Electron. Inf. & Commun. Eng, Japan, pages 1389 - 1393, XP008004890, ISSN: 0916-8524 *

Also Published As

Publication number Publication date
US20020121674A1 (en) 2002-09-05
WO2002043155A2 (en) 2002-05-30
US7186624B2 (en) 2007-03-06
AU2002219895A1 (en) 2002-06-03
WO2002043155A9 (en) 2003-08-14
JP2004521485A (en) 2004-07-15
US20050064672A1 (en) 2005-03-24
US6750480B2 (en) 2004-06-15

Similar Documents

Publication Publication Date Title
WO2002043155A3 (en) Bipolar transistor with lattice matched base layer
WO2001043165A3 (en) Oxide films containing p-type dopant and process for preparing same
WO2005008738A3 (en) SEMI-INSULATING GaN AND METHOD OF MAKING THE SAME
WO2003029354A1 (en) Organic semiconductor material and organic semiconductor element employing the same
AU2002352817A1 (en) Strain balanced nitride heterojunction transistors and methods of fabricating strain balanced nitride heterojunction transistors
WO2005101528A3 (en) Heterojunction bipolar transistor having non-uniformly doped collector for improved safe-operating area
TW200721529A (en) Gan heterojunction bipolar transistor with a p-type strained ingan layer and method of fabrication therefore
TW200631104A (en) In situ formed halo region in a transistor device
WO2007001672A3 (en) Growth of heterojunction bipolar trasistor stacks by remote injection
WO2001031685A3 (en) InPSb/InAs BJT DEVICE AND METHOD OF MAKING
EP1533849A3 (en) Heterojunction bipolar transistor
WO2004095517A3 (en) Passivation layer for group iii-v semiconductor devices
TW200729349A (en) Bandgap and recombination engineered emitter layers for Si-Ge HBT performance optimization
CA2311061A1 (en) Molecular beam epitaxy (mbe) growth of semi-insulating c-doped gan
WO2004077504A3 (en) Gallium arsenide hbt having increased performance and method for its fabrication
Won et al. High-speed performance of Si/Si/sub 1-x/Ge/sub x/heterojunction bipolar transistors
EP1237199A3 (en) Thin gallium-arsenide-antimonide base heterojunction bipolar transistor (HBT) having improved gain
EP1265294A3 (en) Heterojunction bipolar transistor
Kao et al. Characteristics of graded‐like multiple‐delta‐doped GaAs field effect transistors
TW200616093A (en) Bipolar transistor with graded base layer
TW200618116A (en) Epitaxial crystal growing method
WO2002103802A3 (en) Transistor with intentionally tensile mismatched base layer
WO2006102429A3 (en) Above room temperature ferromagnetic silicon
Topf et al. GaN/SiC heterojunctions grown by LP–CVD
Lee et al. Simulations of InGaN-base heterojunction bipolar transistors

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2002544788

Country of ref document: JP

COP Corrected version of pamphlet

Free format text: PAGES 1/6-6/6, DRAWINGS, REPLACED BY NEW PAGES 1/7-7/7; DUE TO LATE TRANSMITTAL BY THE RECEIVING OFFICE

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

122 Ep: pct application non-entry in european phase