WO2002032022A3 - Optical communications apparatus - Google Patents

Optical communications apparatus Download PDF

Info

Publication number
WO2002032022A3
WO2002032022A3 PCT/GB2001/004511 GB0104511W WO0232022A3 WO 2002032022 A3 WO2002032022 A3 WO 2002032022A3 GB 0104511 W GB0104511 W GB 0104511W WO 0232022 A3 WO0232022 A3 WO 0232022A3
Authority
WO
WIPO (PCT)
Prior art keywords
polarisation
spin
emitter
photo
data
Prior art date
Application number
PCT/GB2001/004511
Other languages
French (fr)
Other versions
WO2002032022A2 (en
Inventor
Richard Alan Doyle
Gordon Malcolm Edge
Daniel Timson
Original Assignee
Gentech Invest Group Ag
Richard Alan Doyle
Gordon Malcolm Edge
Daniel Timson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0024806A external-priority patent/GB0024806D0/en
Priority claimed from GB0029629A external-priority patent/GB0029629D0/en
Priority claimed from GB0100193A external-priority patent/GB0100193D0/en
Application filed by Gentech Invest Group Ag, Richard Alan Doyle, Gordon Malcolm Edge, Daniel Timson filed Critical Gentech Invest Group Ag
Priority to JP2002535300A priority Critical patent/JP2004516697A/en
Priority to AU2001293989A priority patent/AU2001293989A1/en
Priority to EP01974474A priority patent/EP1325572A2/en
Publication of WO2002032022A2 publication Critical patent/WO2002032022A2/en
Publication of WO2002032022A3 publication Critical patent/WO2002032022A3/en

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H04B10/516—Details of coding or modulation
    • H04B10/532—Polarisation modulation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06236—Controlling other output parameters than intensity or frequency controlling the polarisation, e.g. TM/TE polarisation switching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Nanotechnology (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Optical Communication System (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

A optical communications apparatus has an optical transmitter (T) with a signal source (10) for supplying a data signal comprising data to be transmitted, a photo-emitter (40) for emitting photons, a spin injector (30) supplying spin-polarised charge carriers for causing the photo-emitter to emit photons having a polarisation determined by the spin-polarisation of te charge carriers supplied by the spin injector (30), and a controller (20) for controlling the spin injector to cause the spin polarisation of the charge carriers supplied by the spin polarisation of the charge carriers supplied by the spin injector (30) to be controlled in accordance with data to be transmitted such that, in operation, the photo-emitter (40) provides an optical signal in which the polarisation of the photons emitted by the photo-emitter is modulated on the basis of data supplied by the signal sources; and a receiver (R) with a polarisation of photons received from the photo-emitter (40) and a data extractor (24) for extracting data transmitted in the optical signal provided by the photo-emitter on the basis of the photon polarisations determined by the polarisation detector.
PCT/GB2001/004511 2000-10-10 2001-10-10 Optical communications apparatus WO2002032022A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002535300A JP2004516697A (en) 2000-10-10 2001-10-10 Communication device
AU2001293989A AU2001293989A1 (en) 2000-10-10 2001-10-10 Optical communications apparatus
EP01974474A EP1325572A2 (en) 2000-10-10 2001-10-10 Optical communications apparatus

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
GB0024806.2 2000-10-10
GB0024806A GB0024806D0 (en) 2000-10-10 2000-10-10 Spin-based polarisation modulation devices
GB0029629.3 2000-12-05
GB0029629A GB0029629D0 (en) 2000-12-05 2000-12-05 Spin based polarisation modulation devices
GB0100193A GB0100193D0 (en) 2001-01-04 2001-01-04 Control of spin-based devices
GB0100193.2 2001-01-04

Publications (2)

Publication Number Publication Date
WO2002032022A2 WO2002032022A2 (en) 2002-04-18
WO2002032022A3 true WO2002032022A3 (en) 2003-03-20

Family

ID=27255928

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2001/004511 WO2002032022A2 (en) 2000-10-10 2001-10-10 Optical communications apparatus

Country Status (4)

Country Link
EP (1) EP1325572A2 (en)
JP (1) JP2004516697A (en)
AU (1) AU2001293989A1 (en)
WO (1) WO2002032022A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6869230B2 (en) * 2002-07-02 2005-03-22 Sae Magnetics (Hong Kong) Assembly for high-speed optical transmitter or receiver
JP5022753B2 (en) * 2007-03-29 2012-09-12 富士通株式会社 Cooling device for light emitting / receiving elements
CN103227678B (en) * 2013-03-28 2015-09-23 上海卫星工程研究所 Directly utilize the space communication system of solar X-ray
US10581522B1 (en) 2018-12-06 2020-03-03 At&T Intellectual Property I, L.P. Free-space, twisted light optical communication system

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06260725A (en) * 1993-03-08 1994-09-16 Res Dev Corp Of Japan Optical semiconductor element
US5764567A (en) * 1996-11-27 1998-06-09 International Business Machines Corporation Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response
EP0993054A2 (en) * 1998-09-30 2000-04-12 Siemens Aktiengesellschaft Thin film magnetic field sensor structure having magneto-resistive multilayer system with spin dependent electron scattering
US6124711A (en) * 1996-01-19 2000-09-26 Fujitsu Limited Magnetic sensor using tunnel resistance to detect an external magnetic field
WO2002013276A1 (en) * 2000-08-09 2002-02-14 Gentech Investment Group Ag A memory device and a memory array

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06260725A (en) * 1993-03-08 1994-09-16 Res Dev Corp Of Japan Optical semiconductor element
US6124711A (en) * 1996-01-19 2000-09-26 Fujitsu Limited Magnetic sensor using tunnel resistance to detect an external magnetic field
US5764567A (en) * 1996-11-27 1998-06-09 International Business Machines Corporation Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response
EP0993054A2 (en) * 1998-09-30 2000-04-12 Siemens Aktiengesellschaft Thin film magnetic field sensor structure having magneto-resistive multilayer system with spin dependent electron scattering
WO2002013276A1 (en) * 2000-08-09 2002-02-14 Gentech Investment Group Ag A memory device and a memory array

Non-Patent Citations (9)

* Cited by examiner, † Cited by third party
Title
BANDYOPADHYAYY S: "Self-assembled nanoelectronic quantum computer based on the Rashba effect in quantum dots", PHYSICAL REVIEW, B. CONDENSED MATTER, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 61, no. 20, 15 May 2000 (2000-05-15), pages 13813 - 13820, XP002168622, ISSN: 0163-1829 *
CIORGA M ET AL: "Addition spectrum of a lateral dot from Coulomb and spin-blockade spectroscopy", PHYSICAL REVIEW, B. CONDENSED MATTER, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 61, no. 24, 15 June 2000 (2000-06-15), pages R16315 - R16318, XP002168623, ISSN: 0163-1829 *
FIEDERLING R ET AL: "INJECTION AND DETECTION OF A SPIN-POLARIZED CURRENT IN A LIGHT-EMITTING DIODE", NATURE, MACMILLAN JOURNALS LTD. LONDON, GB, vol. 402, no. 6763, 16 December 1999 (1999-12-16), pages 787 - 790, XP000960957, ISSN: 0028-0836 *
KURI T ET AL: "Multiple polarization modulation (MPLM) system for coherent optical space communication", GLOBAL TELECOMMUNICATIONS CONFERENCE, 1995. CONFERENCE RECORD. COMMUNICATION THEORY MINI-CONFERENCE, GLOBECOM '95., IEEE SINGAPORE 13-17 NOV. 1995, NEW YORK, NY, USA,IEEE, US, 13 November 1995 (1995-11-13), pages 2003 - 2007, XP010164607, ISBN: 0-7803-2509-5 *
MOODERA J S ET AL: "FERROMAGNETIC-INSULATOR-FERROMAGNETIC TUNNELING: SPIN-DEPENDENT TUNNELING AND LARGE MAGNETORESISTANCE IN TRILAYER JUNCTIONS (INVITED)", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 79, no. 8, PART 2A, 15 April 1996 (1996-04-15), pages 4724 - 4729, XP000695592, ISSN: 0021-8979 *
OHNO Y ET AL: "ELECTRICAL SPIN INJECTION IN A FERROMAGNETIC SEMICONDUCTOR HETEROSTRUCTURE", NATURE, MACMILLAN JOURNALS LTD. LONDON, GB, vol. 402, no. 6763, 16 December 1999 (1999-12-16), pages 790 - 792, XP000960958, ISSN: 0028-0836 *
PATENT ABSTRACTS OF JAPAN vol. 018, no. 661 (E - 1644) 14 December 1994 (1994-12-14) *
RECHER ET AL: "Quantum Dots as Spin Filter and Spin Memory", MEETING OF THE AMERICAN PHYSICAL SOCIETY, XX, XX, 9 March 2000 (2000-03-09), XP002168621 *
SUKHORUKOV E V ET AL: "SPINTRONICS AND SPIN-BASED QUBITS IN QUANTUM DOTS", PHYSICA STATUS SOLIDI. B, BASIC RESEARCH, AKADEMIE VERLAG, BERLIN, DE, vol. 224, no. 3, 1 April 2000 (2000-04-01), pages 855 - 862, XP001005936, ISSN: 0370-1972 *

Also Published As

Publication number Publication date
EP1325572A2 (en) 2003-07-09
JP2004516697A (en) 2004-06-03
WO2002032022A2 (en) 2002-04-18
AU2001293989A1 (en) 2002-04-22

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