WO2002029890A3 - Semiconductor stacked die devices and methods of forming semiconductor stacked die devices - Google Patents

Semiconductor stacked die devices and methods of forming semiconductor stacked die devices Download PDF

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Publication number
WO2002029890A3
WO2002029890A3 PCT/US2001/029578 US0129578W WO0229890A3 WO 2002029890 A3 WO2002029890 A3 WO 2002029890A3 US 0129578 W US0129578 W US 0129578W WO 0229890 A3 WO0229890 A3 WO 0229890A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor stacked
stacked die
die devices
methods
conductive
Prior art date
Application number
PCT/US2001/029578
Other languages
French (fr)
Other versions
WO2002029890A2 (en
Inventor
Belgacem Haba
Original Assignee
Rambus Inc
Belgacem Haba
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rambus Inc, Belgacem Haba filed Critical Rambus Inc
Priority to AU2001291177A priority Critical patent/AU2001291177A1/en
Publication of WO2002029890A2 publication Critical patent/WO2002029890A2/en
Publication of WO2002029890A3 publication Critical patent/WO2002029890A3/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657Stacked arrangements of devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06513Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06541Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06572Auxiliary carrier between devices, the carrier having an electrical connection structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06582Housing for the assembly, e.g. chip scale package [CSP]
    • H01L2225/06586Housing with external bump or bump-like connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Semiconductor devices and methods of forming semiconductor devices are described. In one embodiment, at least one conductive structure is formed within a plurality of semiconductor substrate. At least portions of one of the conductive structures have oppositely facing, exposed outer surfaces. Individual substrates are stacked together in a die stack such that individual conductive structures on each substrate are in electrical contact with the conductive structures on a next adjacent substrate. In a preferred embodiment, the conductive structures comprise multi-layered, conductive pad structures.
PCT/US2001/029578 2000-10-03 2001-09-19 Semiconductor stacked die devices and methods of forming semiconductor stacked die devices WO2002029890A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001291177A AU2001291177A1 (en) 2000-10-03 2001-09-19 Semiconductor stacked die devices and methods of forming semiconductor stacked die devices

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/679,143 2000-10-03
US09/679,143 US6674161B1 (en) 2000-10-03 2000-10-03 Semiconductor stacked die devices

Publications (2)

Publication Number Publication Date
WO2002029890A2 WO2002029890A2 (en) 2002-04-11
WO2002029890A3 true WO2002029890A3 (en) 2003-08-07

Family

ID=24725738

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/029578 WO2002029890A2 (en) 2000-10-03 2001-09-19 Semiconductor stacked die devices and methods of forming semiconductor stacked die devices

Country Status (3)

Country Link
US (3) US6674161B1 (en)
AU (1) AU2001291177A1 (en)
WO (1) WO2002029890A2 (en)

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US6674161B1 (en) * 2000-10-03 2004-01-06 Rambus Inc. Semiconductor stacked die devices
JP2002184934A (en) * 2000-12-13 2002-06-28 Shinko Electric Ind Co Ltd Semiconductor device and manufacturing method thereof
US7777321B2 (en) * 2002-04-22 2010-08-17 Gann Keith D Stacked microelectronic layer and module with three-axis channel T-connects
US6806559B2 (en) * 2002-04-22 2004-10-19 Irvine Sensors Corporation Method and apparatus for connecting vertically stacked integrated circuit chips
US6936913B2 (en) * 2002-12-11 2005-08-30 Northrop Grumman Corporation High performance vias for vertical IC packaging
US7244671B2 (en) * 2003-07-25 2007-07-17 Unitive International Limited Methods of forming conductive structures including titanium-tungsten base layers and related structures
US20070109756A1 (en) * 2005-02-10 2007-05-17 Stats Chippac Ltd. Stacked integrated circuits package system
WO2006095703A1 (en) * 2005-03-09 2006-09-14 Matsushita Electric Industrial Co., Ltd. Structure and method for mounting bare chip
US7829989B2 (en) * 2005-09-07 2010-11-09 Alpha & Omega Semiconductor, Ltd. Vertical packaged IC device modules with interconnected 3D laminates directly contacts wafer backside
US8093717B2 (en) * 2005-12-09 2012-01-10 Intel Corporation Microstrip spacer for stacked chip scale packages, methods of making same, methods of operating same, and systems containing same
US7781877B2 (en) 2007-08-07 2010-08-24 Micron Technology, Inc. Packaged integrated circuit devices with through-body conductive vias, and methods of making same
US8017451B2 (en) * 2008-04-04 2011-09-13 The Charles Stark Draper Laboratory, Inc. Electronic modules and methods for forming the same
US8273603B2 (en) 2008-04-04 2012-09-25 The Charles Stark Draper Laboratory, Inc. Interposers, electronic modules, and methods for forming the same
DE102008018982A1 (en) 2008-04-14 2009-11-05 Merz, Hartmut, Prof. Dr. med. Automatic device for carrying out detection reactions and method for dispensing reagents on microscope slides
US7821107B2 (en) * 2008-04-22 2010-10-26 Micron Technology, Inc. Die stacking with an annular via having a recessed socket
US20110034045A1 (en) * 2009-08-06 2011-02-10 Qimonda Ag Stacking Technique for Circuit Devices
US9398700B2 (en) * 2013-06-21 2016-07-19 Invensas Corporation Method of forming a reliable microelectronic assembly

Citations (3)

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US5434745A (en) * 1994-07-26 1995-07-18 White Microelectronics Div. Of Bowmar Instrument Corp. Stacked silicon die carrier assembly
US5864177A (en) * 1996-12-12 1999-01-26 Honeywell Inc. Bypass capacitors for chip and wire circuit assembly
US5973396A (en) * 1996-02-16 1999-10-26 Micron Technology, Inc. Surface mount IC using silicon vias in an area array format or same size as die array

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US4394712A (en) * 1981-03-18 1983-07-19 General Electric Company Alignment-enhancing feed-through conductors for stackable silicon-on-sapphire wafers
US4954875A (en) * 1986-07-17 1990-09-04 Laser Dynamics, Inc. Semiconductor wafer array with electrically conductive compliant material
US5229647A (en) * 1991-03-27 1993-07-20 Micron Technology, Inc. High density data storage using stacked wafers
US5270261A (en) * 1991-09-13 1993-12-14 International Business Machines Corporation Three dimensional multichip package methods of fabrication
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JP3544974B2 (en) * 1992-05-15 2004-07-21 イルビン センサーズ コーポレーション Integrated laminate
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Patent Citations (3)

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US5434745A (en) * 1994-07-26 1995-07-18 White Microelectronics Div. Of Bowmar Instrument Corp. Stacked silicon die carrier assembly
US5973396A (en) * 1996-02-16 1999-10-26 Micron Technology, Inc. Surface mount IC using silicon vias in an area array format or same size as die array
US5864177A (en) * 1996-12-12 1999-01-26 Honeywell Inc. Bypass capacitors for chip and wire circuit assembly

Also Published As

Publication number Publication date
US6902953B2 (en) 2005-06-07
AU2001291177A1 (en) 2002-04-15
US20050202592A1 (en) 2005-09-15
WO2002029890A2 (en) 2002-04-11
US20040097010A1 (en) 2004-05-20
US7078790B2 (en) 2006-07-18
US6674161B1 (en) 2004-01-06

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