WO2002029130A1 - Ensemble cible assemble par diffusion constitue d'une cible de cobalt haute purete et d'une plaque support en alliage de cuivre et procede de fabrication associe - Google Patents

Ensemble cible assemble par diffusion constitue d'une cible de cobalt haute purete et d'une plaque support en alliage de cuivre et procede de fabrication associe Download PDF

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Publication number
WO2002029130A1
WO2002029130A1 PCT/JP2001/005902 JP0105902W WO0229130A1 WO 2002029130 A1 WO2002029130 A1 WO 2002029130A1 JP 0105902 W JP0105902 W JP 0105902W WO 0229130 A1 WO0229130 A1 WO 0229130A1
Authority
WO
WIPO (PCT)
Prior art keywords
target
diffusion
joined
backing plate
production method
Prior art date
Application number
PCT/JP2001/005902
Other languages
English (en)
French (fr)
Inventor
Kazushige Takahashi
Hirohito Miyashita
Original Assignee
Nikko Materials Company, Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikko Materials Company, Limited filed Critical Nikko Materials Company, Limited
Priority to US10/239,556 priority Critical patent/US6793124B1/en
Priority to KR10-2003-7004083A priority patent/KR20030038758A/ko
Publication of WO2002029130A1 publication Critical patent/WO2002029130A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • H01F41/183—Sputtering targets therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
PCT/JP2001/005902 2000-10-02 2001-07-06 Ensemble cible assemble par diffusion constitue d'une cible de cobalt haute purete et d'une plaque support en alliage de cuivre et procede de fabrication associe WO2002029130A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/239,556 US6793124B1 (en) 2000-10-02 2001-07-06 Diffusion-joined target assemly of high-purity cobalt target and copper alloy backing plate and production method therefor
KR10-2003-7004083A KR20030038758A (ko) 2000-10-02 2001-07-06 고순도 코발트 타겟트와 동합금제 배킹 플레이트와의확산접합 타겟트 조립체 및 그 제조방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000-302134 2000-10-02
JP2000302134A JP3905295B2 (ja) 2000-10-02 2000-10-02 高純度コバルトターゲットと銅合金製バッキングプレートとの拡散接合ターゲット組立体及びその製造方法

Publications (1)

Publication Number Publication Date
WO2002029130A1 true WO2002029130A1 (fr) 2002-04-11

Family

ID=18783542

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/005902 WO2002029130A1 (fr) 2000-10-02 2001-07-06 Ensemble cible assemble par diffusion constitue d'une cible de cobalt haute purete et d'une plaque support en alliage de cuivre et procede de fabrication associe

Country Status (5)

Country Link
US (1) US6793124B1 (ja)
JP (1) JP3905295B2 (ja)
KR (1) KR20030038758A (ja)
TW (1) TW575673B (ja)
WO (1) WO2002029130A1 (ja)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7347353B2 (en) * 2001-12-19 2008-03-25 Nippon Mining & Metals Co., Ltd. Method for connecting magnetic substance target to backing plate, and magnetic substance target
US20060240640A1 (en) * 2002-10-18 2006-10-26 Vitali Nesterenko Isostatic pressure assisted wafer bonding method
US8225481B2 (en) * 2003-05-19 2012-07-24 Pratt & Whitney Rocketdyne, Inc. Diffusion bonded composite material and method therefor
EP2626444A3 (en) * 2003-12-25 2013-10-16 JX Nippon Mining & Metals Corporation Copper or copper alloy target/copper alloy backing plate assembly
US8123107B2 (en) * 2004-05-25 2012-02-28 Praxair S.T. Technology, Inc. Method for forming sputter target assemblies
JP4629051B2 (ja) * 2004-11-17 2011-02-09 Ｊｘ日鉱日石金属株式会社 スパッタリングターゲット−バッキングプレート組立体及び成膜装置
US20070056845A1 (en) * 2005-09-13 2007-03-15 Applied Materials, Inc. Multiple zone sputtering target created through conductive and insulation bonding
CN101479400B (zh) * 2006-06-29 2011-06-22 Jx日矿日石金属株式会社 溅射靶/背衬板接合体
EP2119808B1 (en) * 2007-02-09 2014-09-17 JX Nippon Mining & Metals Corporation Target formed of sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride, or high-melting point metal boride, process for producing the target, assembly of the sputtering target-backing plate, and process for producing the same
KR20120070607A (ko) 2009-11-20 2012-06-29 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 스퍼터링 타깃-백킹 플레이트 접합체 및 그 제조 방법
KR20140097547A (ko) 2009-12-24 2014-08-06 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 가돌리늄제 스퍼터링 타깃 및 동 타깃의 제조 방법
WO2012057106A1 (ja) 2010-10-27 2012-05-03 Jx日鉱日石金属株式会社 スパッタリングターゲット－バッキングプレート接合体及びその製造方法
US9831073B2 (en) 2012-02-14 2017-11-28 Tosoh Smd, Inc. Low deflection sputtering target assembly and methods of making same
WO2014007151A1 (ja) * 2012-07-04 2014-01-09 Jx日鉱日石金属株式会社 スパッタリングターゲット
CN103801820A (zh) * 2012-11-13 2014-05-21 宁波江丰电子材料有限公司 钽靶材和铝背板的热等静压扩散焊焊接方法
SG11201507866WA (en) 2013-11-06 2015-10-29 Jx Nippon Mining & Metals Corp Sputtering target-backing plate assembly
CN104259644B (zh) * 2014-07-24 2016-04-27 有研亿金新材料有限公司 一种钨钛合金靶材焊接方法
WO2016017432A1 (ja) 2014-07-31 2016-02-04 Jx日鉱日石金属株式会社 防食性の金属とＭｏ又はＭｏ合金を拡散接合したバッキングプレート、及び該バッキングプレートを備えたスパッタリングターゲット－バッキングプレート組立体
CN112935512A (zh) * 2021-03-26 2021-06-11 宁波江丰电子材料股份有限公司 一种钴靶材与铜铬合金背板的扩散焊接方法
CN113579644A (zh) * 2021-07-02 2021-11-02 散裂中子源科学中心 一种增强复合靶材寿命的焊接方法
CN116261605A (zh) * 2021-08-11 2023-06-13 Ｊｘ金属株式会社 溅射靶及溅射靶的制造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11236665A (ja) * 1998-02-20 1999-08-31 Japan Energy Corp スパッタリングタ−ゲット用バッキングプレ−ト及びスパッタリングタ−ゲット／バッキングプレ−ト組立体
US6071389A (en) * 1998-08-21 2000-06-06 Tosoh Smd, Inc. Diffusion bonded sputter target assembly and method of making
JP2000239837A (ja) * 1999-02-15 2000-09-05 Sony Corp 固相拡散接合されたスパッタリングターゲット組立体の分離方法

Family Cites Families (8)

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JPH069906B2 (ja) 1986-03-04 1994-02-09 日本発条株式会社 黒鉛と銅または銅合金からなる複合材
WO1996015283A1 (en) * 1994-11-15 1996-05-23 Tosoh Smd, Inc. Method of bonding targets to backing plate member
US5836506A (en) * 1995-04-21 1998-11-17 Sony Corporation Sputter target/backing plate assembly and method of making same
US6274015B1 (en) * 1996-12-13 2001-08-14 Honeywell International, Inc. Diffusion bonded sputtering target assembly with precipitation hardened backing plate and method of making same
WO1998041669A1 (en) * 1997-03-19 1998-09-24 Johnson Matthey Electronics, Inc. Ni-plated target diffusion bonded to a backing plate and method of making same
US6451185B2 (en) * 1998-08-12 2002-09-17 Honeywell International Inc. Diffusion bonded sputtering target assembly with precipitation hardened backing plate and method of making same
US6521108B1 (en) * 1998-12-29 2003-02-18 Tosoh Smd, Inc. Diffusion bonded sputter target assembly and method of making same
US6376281B1 (en) * 2000-10-27 2002-04-23 Honeywell International, Inc. Physical vapor deposition target/backing plate assemblies

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11236665A (ja) * 1998-02-20 1999-08-31 Japan Energy Corp スパッタリングタ−ゲット用バッキングプレ−ト及びスパッタリングタ−ゲット／バッキングプレ−ト組立体
US6071389A (en) * 1998-08-21 2000-06-06 Tosoh Smd, Inc. Diffusion bonded sputter target assembly and method of making
JP2000239837A (ja) * 1999-02-15 2000-09-05 Sony Corp 固相拡散接合されたスパッタリングターゲット組立体の分離方法

Also Published As

Publication number Publication date
US6793124B1 (en) 2004-09-21
JP2002105635A (ja) 2002-04-10
JP3905295B2 (ja) 2007-04-18
TW575673B (en) 2004-02-11
KR20030038758A (ko) 2003-05-16

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