WO2002027804A3 - Vertical color filter detector group and array - Google Patents

Vertical color filter detector group and array Download PDF

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Publication number
WO2002027804A3
WO2002027804A3 PCT/US2001/029488 US0129488W WO0227804A3 WO 2002027804 A3 WO2002027804 A3 WO 2002027804A3 US 0129488 W US0129488 W US 0129488W WO 0227804 A3 WO0227804 A3 WO 0227804A3
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WO
WIPO (PCT)
Prior art keywords
layers
layer
semiconductor
detector
type
Prior art date
Application number
PCT/US2001/029488
Other languages
French (fr)
Other versions
WO2002027804A2 (en
Inventor
Richard B Merrill
Original Assignee
Foveon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Foveon Inc filed Critical Foveon Inc
Priority to AU2001292885A priority Critical patent/AU2001292885A1/en
Priority to KR1020037004327A priority patent/KR100791752B1/en
Priority to EP01973289A priority patent/EP1320893B1/en
Priority to DE60139627T priority patent/DE60139627D1/en
Priority to JP2002531499A priority patent/JP5201776B2/en
Publication of WO2002027804A2 publication Critical patent/WO2002027804A2/en
Publication of WO2002027804A3 publication Critical patent/WO2002027804A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H01L27/14647—Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof

Abstract

A vertical color filter detector group according to the present invention is formed on a semiconductor substrate and comprises at least six layers of alternating p-type and n-typed doped regions. PN junctions between the layers operate as photodiodes with spectral sensitivities that depend on the absorption depth versus wavelength of light in the semiconductor. Alternate layers, preferably the n-type layers, are detector layers to collect photo-generated carriers, while the intervening layers, preferably p-type, are reference layers and are connected in common to a reference potential referred to as ground. Each detector group includes a blue-sensitive detector layer at an n-type layer at the surface of the semiconductor, a green-sensitive detector layer at an n-type layer deeper in the semiconductor, and a red-sensitive detector layer at the n-type layer deepest in the semiconductor. The blue-sensitive detector layer at the surface of the semiconductor may have a reference layer only below it, while the red- and green-sensitive detector layers have reference layers above and below them. Three sets of active pixel sensor circuitry are coupled to the three detector layers, such that three active pixel sensors are formed using the group of three co-located detectors of the vertical color filter detector group.
PCT/US2001/029488 2000-09-25 2001-09-20 Vertical color filter detector group and array WO2002027804A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
AU2001292885A AU2001292885A1 (en) 2000-09-25 2001-09-20 Vertical color filter detector group and array
KR1020037004327A KR100791752B1 (en) 2000-09-25 2001-09-20 Vertical color filter detector group and array
EP01973289A EP1320893B1 (en) 2000-09-25 2001-09-20 Vertical color filter array and its method of manufacturing
DE60139627T DE60139627D1 (en) 2000-09-25 2001-09-20 DETECTOR MATRIX WITH VERTICAL COLOR FILTER AND ITS MANUFACTURING METHOD
JP2002531499A JP5201776B2 (en) 2000-09-25 2001-09-20 Vertical color filter detector group and array

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US23524900P 2000-09-25 2000-09-25
US60/235,249 2000-09-25
US09/884,863 US6727521B2 (en) 2000-09-25 2001-06-18 Vertical color filter detector group and array
US09/884,863 2001-06-18

Publications (2)

Publication Number Publication Date
WO2002027804A2 WO2002027804A2 (en) 2002-04-04
WO2002027804A3 true WO2002027804A3 (en) 2003-02-20

Family

ID=26928728

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/029488 WO2002027804A2 (en) 2000-09-25 2001-09-20 Vertical color filter detector group and array

Country Status (8)

Country Link
US (3) US6727521B2 (en)
EP (1) EP1320893B1 (en)
JP (1) JP5201776B2 (en)
KR (1) KR100791752B1 (en)
AU (1) AU2001292885A1 (en)
DE (1) DE60139627D1 (en)
TW (1) TW517387B (en)
WO (1) WO2002027804A2 (en)

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