WO2002026400A8 - Method and apparatus for applying controlled succession of thermal spikes or shockwaves through a medium - Google Patents

Method and apparatus for applying controlled succession of thermal spikes or shockwaves through a medium

Info

Publication number
WO2002026400A8
WO2002026400A8 PCT/US2001/027729 US0127729W WO0226400A8 WO 2002026400 A8 WO2002026400 A8 WO 2002026400A8 US 0127729 W US0127729 W US 0127729W WO 0226400 A8 WO0226400 A8 WO 0226400A8
Authority
WO
WIPO (PCT)
Prior art keywords
shockwaves
medium
solids
gases
electrode
Prior art date
Application number
PCT/US2001/027729
Other languages
French (fr)
Other versions
WO2002026400A1 (en
Inventor
Sveinn Olafsson
Original Assignee
Kenney J Ernest
Sveinn Olafsson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kenney J Ernest, Sveinn Olafsson filed Critical Kenney J Ernest
Priority to EP01972949A priority Critical patent/EP1345704A4/en
Priority to JP2002530221A priority patent/JP2004509747A/en
Priority to AU2001292580A priority patent/AU2001292580A1/en
Publication of WO2002026400A1 publication Critical patent/WO2002026400A1/en
Publication of WO2002026400A8 publication Critical patent/WO2002026400A8/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/081—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing particle radiation or gamma-radiation
    • B01J19/085—Electron beams only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C25/00—Surface treatment of fibres or filaments made from glass, minerals or slags
    • C03C25/70—Cleaning, e.g. for reuse
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/145—Radiation by charged particles, e.g. electron beams or ion irradiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units

Abstract

A method and apparatus for locally raising the temperature of a material to facilitate chemical reactions or processes related to growth or removal of the material, utilizes an electrode to apply, in the presence of a growth or removal medium, a controlled succession of thermal spikes or shockwaves (6) of varying energy, on the scale of a few nanometers to several hundred micrometers. The duration of the thermal spikes or shockwaves ranges from a few picoseconds to several hundred nanoseconds. The medium may be a cryogenic liquid. Other growth media, including liquids, solids, gases in critical or non-critical state, and mixtures of liquids/solids, solids/gases, and liquids/gases, may also be employed. The electrode may be an electrode emitter tip (1) with an anode (2) above workpiece (4) on platform (3) in the medium. Circuit (5) includes power source (7) with switch (8) controlling voltage pulse duration applied across tip and anode to produce shockwaves.
PCT/US2001/027729 2000-09-26 2001-09-24 Method and apparatus for applying controlled succession of thermal spikes or shockwaves through a medium WO2002026400A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP01972949A EP1345704A4 (en) 2000-09-26 2001-09-24 Method and apparatus for applying controlled succession of thermal spikes or shockwaves through a medium
JP2002530221A JP2004509747A (en) 2000-09-26 2001-09-24 Method and apparatus for applying a controlled continuous thermal spike or shockwave through a medium
AU2001292580A AU2001292580A1 (en) 2000-09-26 2001-09-24 Method and apparatus for applying controlled succession of thermal spikes or shockwaves through a medium

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/670,028 US6730370B1 (en) 2000-09-26 2000-09-26 Method and apparatus for processing materials by applying a controlled succession of thermal spikes or shockwaves through a growth medium
US09/670,028 2000-09-26

Publications (2)

Publication Number Publication Date
WO2002026400A1 WO2002026400A1 (en) 2002-04-04
WO2002026400A8 true WO2002026400A8 (en) 2002-06-20

Family

ID=24688678

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/027729 WO2002026400A1 (en) 2000-09-26 2001-09-24 Method and apparatus for applying controlled succession of thermal spikes or shockwaves through a medium

Country Status (5)

Country Link
US (2) US6730370B1 (en)
EP (1) EP1345704A4 (en)
JP (1) JP2004509747A (en)
AU (1) AU2001292580A1 (en)
WO (1) WO2002026400A1 (en)

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US6593666B1 (en) * 2001-06-20 2003-07-15 Ambient Systems, Inc. Energy conversion systems using nanometer scale assemblies and methods for using same
US7199498B2 (en) * 2003-06-02 2007-04-03 Ambient Systems, Inc. Electrical assemblies using molecular-scale electrically conductive and mechanically flexible beams and methods for application of same
US7148579B2 (en) * 2003-06-02 2006-12-12 Ambient Systems, Inc. Energy conversion systems utilizing parallel array of automatic switches and generators
US20040238907A1 (en) * 2003-06-02 2004-12-02 Pinkerton Joseph F. Nanoelectromechanical transistors and switch systems
US7095645B2 (en) * 2003-06-02 2006-08-22 Ambient Systems, Inc. Nanoelectromechanical memory cells and data storage devices
RU2006144968A (en) * 2004-05-20 2008-06-27 Кория Эдванст Инститьют Оф Сайенс Энд Текнолоджи (Kr) METHOD AND DEVICE FOR PRODUCING A CARBON NANOTUBE
EP1805869A2 (en) 2004-07-19 2007-07-11 Ambient Systems, Inc. Nanometer-scale electrostatic and electromagnetic motors and generators
US20060275537A1 (en) * 2005-06-02 2006-12-07 The Regents Of The University Of California Method and apparatus for field-emission high-pressure-discharge laser chemical vapor deposition of free-standing structures
US20070048160A1 (en) * 2005-07-19 2007-03-01 Pinkerton Joseph F Heat activated nanometer-scale pump
US8385113B2 (en) 2007-04-03 2013-02-26 Cjp Ip Holdings, Ltd. Nanoelectromechanical systems and methods for making the same
US8314357B2 (en) * 2009-05-08 2012-11-20 Children's Hospital And Research Center At Oakland Joule heated nanowire biosensors

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US3713213A (en) 1970-01-29 1973-01-30 Western Electric Co Explosive bonding of workpieces
US3727296A (en) 1970-01-29 1973-04-17 B Cranston Explosive bonding of workpieces
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EP0318037A3 (en) * 1987-11-27 1990-07-25 Sony Corporation Method for forming a fine pattern by using a patterned resist layer
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Also Published As

Publication number Publication date
AU2001292580A1 (en) 2002-04-08
EP1345704A4 (en) 2006-03-15
EP1345704A1 (en) 2003-09-24
US6730370B1 (en) 2004-05-04
US20040221812A1 (en) 2004-11-11
JP2004509747A (en) 2004-04-02
WO2002026400A1 (en) 2002-04-04

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