WO2002023619A3 - Method and device for the detection of layers applied to a wafer - Google Patents

Method and device for the detection of layers applied to a wafer Download PDF

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Publication number
WO2002023619A3
WO2002023619A3 PCT/DE2001/003465 DE0103465W WO0223619A3 WO 2002023619 A3 WO2002023619 A3 WO 2002023619A3 DE 0103465 W DE0103465 W DE 0103465W WO 0223619 A3 WO0223619 A3 WO 0223619A3
Authority
WO
WIPO (PCT)
Prior art keywords
light beams
wafer
detection
layers applied
layer
Prior art date
Application number
PCT/DE2001/003465
Other languages
German (de)
French (fr)
Other versions
WO2002023619A2 (en
Inventor
Ernst Biedermann
Stefan Ellinger
Original Assignee
Infineon Technologies Ag
Ernst Biedermann
Stefan Ellinger
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Ernst Biedermann, Stefan Ellinger filed Critical Infineon Technologies Ag
Publication of WO2002023619A2 publication Critical patent/WO2002023619A2/en
Publication of WO2002023619A3 publication Critical patent/WO2002023619A3/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry

Abstract

The invention relates to a method and device for the detection of layers applied to a wafer. A layer (3) is irradiated with transmission light beams of various wavelengths, whereby the transmission light beams (4, 4', 4'') are guided from the layer (3) to at least one receiver as received light beams (6, 6', 6''). In an analytical unit a selective analysis of the amplitudes of the received light beams (6, 6', 6'') of various wavelengths occurs for the classification of various layers (3).
PCT/DE2001/003465 2000-09-13 2001-09-07 Method and device for the detection of layers applied to a wafer WO2002023619A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10045210.8 2000-09-13
DE2000145210 DE10045210A1 (en) 2000-09-13 2000-09-13 Method and device for detecting layers deposited on a wafer

Publications (2)

Publication Number Publication Date
WO2002023619A2 WO2002023619A2 (en) 2002-03-21
WO2002023619A3 true WO2002023619A3 (en) 2002-12-27

Family

ID=7656009

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2001/003465 WO2002023619A2 (en) 2000-09-13 2001-09-07 Method and device for the detection of layers applied to a wafer

Country Status (2)

Country Link
DE (1) DE10045210A1 (en)
WO (1) WO2002023619A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004034448B4 (en) * 2004-07-16 2008-08-14 Qimonda Ag A method of measuring a layer thickness of a layer on a silicon substrate and a set of at least two semiconductor products

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04276536A (en) * 1991-03-04 1992-10-01 Seiko Instr Inc Semiconductor inspecting apparatus
JPH05129403A (en) * 1991-11-07 1993-05-25 Toshiba Corp Wafer crystal defect detecting equipment
JPH09292207A (en) * 1996-04-25 1997-11-11 Olympus Optical Co Ltd Film thickness inspecting device
US6048742A (en) * 1998-02-26 2000-04-11 The United States Of America As Represented By The Secretary Of The Air Force Process for measuring the thickness and composition of thin semiconductor films deposited on semiconductor wafers

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4302108A (en) * 1979-01-29 1981-11-24 Polaroid Corporation Detection of subsurface defects by reflection interference
JPH0567771A (en) * 1991-09-05 1993-03-19 Matsushita Electric Ind Co Ltd Semiconductor multilayer film wafer and manufacture of semiconductor device
JP2916321B2 (en) * 1992-03-19 1999-07-05 三井金属鉱業株式会社 Method for detecting internal defects in multilayer semiconductor substrate, etc.
DE69421844T2 (en) * 1993-04-23 2000-06-29 Japan Res Dev Corp Method for checking the layer thickness and / or the refractive index
JP2856666B2 (en) * 1993-12-28 1999-02-10 大日本スクリーン製造株式会社 Method for measuring insulating film thickness of semiconductor wafer
IL125964A (en) * 1998-08-27 2003-10-31 Tevet Process Control Technolo Method and apparatus for measuring the thickness of a transparent film, particularly of a photoresist film on a semiconductor substrate
WO2000071971A1 (en) * 1999-05-24 2000-11-30 Luxtron Corporation Optical techniques for measuring layer thicknesses

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04276536A (en) * 1991-03-04 1992-10-01 Seiko Instr Inc Semiconductor inspecting apparatus
JPH05129403A (en) * 1991-11-07 1993-05-25 Toshiba Corp Wafer crystal defect detecting equipment
JPH09292207A (en) * 1996-04-25 1997-11-11 Olympus Optical Co Ltd Film thickness inspecting device
US6048742A (en) * 1998-02-26 2000-04-11 The United States Of America As Represented By The Secretary Of The Air Force Process for measuring the thickness and composition of thin semiconductor films deposited on semiconductor wafers

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 017, no. 070 (P - 1485) 12 February 1993 (1993-02-12) *
PATENT ABSTRACTS OF JAPAN vol. 017, no. 504 (E - 1430) 10 September 1993 (1993-09-10) *
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 03 27 February 1998 (1998-02-27) *

Also Published As

Publication number Publication date
WO2002023619A2 (en) 2002-03-21
DE10045210A1 (en) 2002-05-02

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