WO2002022321A3 - Multiple blade robot adjustment apparatus and associated method - Google Patents
Multiple blade robot adjustment apparatus and associated method Download PDFInfo
- Publication number
- WO2002022321A3 WO2002022321A3 PCT/US2001/029004 US0129004W WO0222321A3 WO 2002022321 A3 WO2002022321 A3 WO 2002022321A3 US 0129004 W US0129004 W US 0129004W WO 0222321 A3 WO0222321 A3 WO 0222321A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- multiple blade
- associated method
- adjustment apparatus
- blade robot
- robot
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
- B25J9/00—Programme-controlled manipulators
- B25J9/16—Programme controls
- B25J9/1628—Programme controls characterised by the control loop
- B25J9/1638—Programme controls characterised by the control loop compensation for arm bending/inertia, pay load weight/inertia
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/30—Nc systems
- G05B2219/40—Robotics, robotics mapping to robotics vision
- G05B2219/40351—Cooperation of hand arm, break down into two subsystems
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/30—Nc systems
- G05B2219/41—Servomotor, servo controller till figures
- G05B2219/41457—Superposition of movement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/241—Reinforcing the conductive pattern characterised by the electroplating method; means therefor, e.g. baths or apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T74/00—Machine element or mechanism
- Y10T74/20—Control lever and linkage systems
- Y10T74/20207—Multiple controlling elements for single controlled element
- Y10T74/20305—Robotic arm
- Y10T74/20311—Robotic arm including power cable or connector
Abstract
The present invention provides an apparatus and associated method in which the apparatus comprises a multiple blade robot and a compensating device. The multiple blade robot includes at least one set of robot blades. The compensating device adjusts for differences in spacing between the set of robot blades and spacing between two or more cells. In different embodiments, the compensating device may be coupled to one or more of the process cells, one or more of the substrate holder systems, or one or more of the robot blades.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/664,607 US6571657B1 (en) | 1999-04-08 | 2000-09-18 | Multiple blade robot adjustment apparatus and associated method |
US09/664,607 | 2000-09-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002022321A2 WO2002022321A2 (en) | 2002-03-21 |
WO2002022321A3 true WO2002022321A3 (en) | 2002-12-27 |
Family
ID=24666681
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/029004 WO2002022321A2 (en) | 2000-09-18 | 2001-09-17 | Multiple blade robot adjustment apparatus and associated method |
Country Status (2)
Country | Link |
---|---|
US (1) | US6571657B1 (en) |
WO (1) | WO2002022321A2 (en) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002029137A2 (en) * | 2000-10-03 | 2002-04-11 | Applied Materials,Inc. | Method and associated apparatus for tilting a substrate upon entry for metal deposition |
US6823278B1 (en) * | 2001-01-26 | 2004-11-23 | Ta Instruments-Waters, Llc | Method and apparatus for positional calibration of a thermal analysis instrument |
JP4183124B2 (en) * | 2002-08-21 | 2008-11-19 | タカタ株式会社 | Seat load measuring device |
US20050092601A1 (en) * | 2003-10-29 | 2005-05-05 | Harald Herchen | Electrochemical plating cell having a diffusion member |
US20050092602A1 (en) * | 2003-10-29 | 2005-05-05 | Harald Herchen | Electrochemical plating cell having a membrane stack |
US20050115492A1 (en) * | 2003-11-28 | 2005-06-02 | Chia-Cheng Liu | Method and apparatus of the chemical metal organic vapor epitaxy for the multi-chamber epitaxy layer deposition |
JP4192118B2 (en) * | 2004-05-31 | 2008-12-03 | 株式会社日立ハイテクノロジーズ | Defect inspection apparatus and defect inspection system |
US7345736B2 (en) | 2004-06-21 | 2008-03-18 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20060102467A1 (en) * | 2004-11-15 | 2006-05-18 | Harald Herchen | Current collimation for thin seed and direct plating |
US20060175201A1 (en) * | 2005-02-07 | 2006-08-10 | Hooman Hafezi | Immersion process for electroplating applications |
US7927062B2 (en) * | 2005-11-21 | 2011-04-19 | Applied Materials, Inc. | Methods and apparatus for transferring substrates during electronic device manufacturing |
US9842757B2 (en) * | 2013-06-05 | 2017-12-12 | Persimmon Technologies Corporation | Robot and adaptive placement system and method |
JP6754771B2 (en) * | 2014-11-18 | 2020-09-16 | パーシモン テクノロジーズ コーポレイションPersimmon Technologies, Corp. | Robot adaptive placement system that performs end effector position estimation |
US9520312B2 (en) * | 2014-12-19 | 2016-12-13 | Varian Semiconductor Equipment Associates, Inc. | System and method for moving workpieces between multiple vacuum environments |
US10580681B2 (en) * | 2016-07-10 | 2020-03-03 | Yaskawa America Inc. | Robotic apparatus and method for transport of a workpiece |
CN109037101A (en) * | 2018-07-13 | 2018-12-18 | 清华大学 | Wafer processing |
CN111283657B (en) * | 2018-12-06 | 2021-12-24 | 台达电子工业股份有限公司 | Robot mechanism |
US11110606B2 (en) * | 2019-01-02 | 2021-09-07 | The Boeing Company | Coordinating work within a multi-robot cell |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3627560A1 (en) * | 1986-08-14 | 1988-02-18 | Audi Ag | Program-controlled and sensor-guided production and/or assembly system, in particular industrial robot |
US5100502A (en) * | 1990-03-19 | 1992-03-31 | Applied Materials, Inc. | Semiconductor wafer transfer in processing systems |
US5382885A (en) * | 1993-08-09 | 1995-01-17 | The University Of British Columbia | Motion scaling tele-operating system with force feedback suitable for microsurgery |
US5811951A (en) * | 1996-10-14 | 1998-09-22 | Regents Of The University Of California | High precision redundant robotic manipulator |
WO1999016111A1 (en) * | 1997-09-22 | 1999-04-01 | Applied Materials, Inc. | Substrate clamping apparatus |
US5975834A (en) * | 1997-07-16 | 1999-11-02 | Daihen Corporation | Two-armed transfer robot |
Family Cites Families (78)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL84048C (en) | 1952-07-05 | |||
DE932709C (en) | 1952-08-31 | 1955-09-08 | W Kampschulte & Cie Dr | Process for the deposition of smooth and shiny copper coatings |
US2882209A (en) | 1957-05-20 | 1959-04-14 | Udylite Res Corp | Electrodeposition of copper from an acid bath |
SU443108A1 (en) | 1968-11-22 | 1974-09-15 | Центральный Научно-Исследовательский Институт Технологии Машиностроения | Copper electrolyte |
US3649509A (en) | 1969-07-08 | 1972-03-14 | Buckbee Mears Co | Electrodeposition systems |
US3727620A (en) | 1970-03-18 | 1973-04-17 | Fluoroware Of California Inc | Rinsing and drying device |
US3770598A (en) | 1972-01-21 | 1973-11-06 | Oxy Metal Finishing Corp | Electrodeposition of copper from acid baths |
US4027686A (en) | 1973-01-02 | 1977-06-07 | Texas Instruments Incorporated | Method and apparatus for cleaning the surface of a semiconductor slice with a liquid spray of de-ionized water |
ES440918A1 (en) | 1975-03-11 | 1977-06-01 | Oxy Metal Industries Corp | Electrodeposition of copper |
JPS5271871A (en) | 1975-12-11 | 1977-06-15 | Nec Corp | Washing apparatus |
JPS5819350B2 (en) | 1976-04-08 | 1983-04-18 | 富士写真フイルム株式会社 | Spin coating method |
US4326940A (en) | 1979-05-21 | 1982-04-27 | Rohco Incorporated | Automatic analyzer and control system for electroplating baths |
US4315059A (en) | 1980-07-18 | 1982-02-09 | The United States Of America As Represented By The United States Department Of Energy | Molten salt lithium cells |
US4405416A (en) | 1980-07-18 | 1983-09-20 | Raistrick Ian D | Molten salt lithium cells |
US4336114A (en) | 1981-03-26 | 1982-06-22 | Hooker Chemicals & Plastics Corp. | Electrodeposition of bright copper |
US4376685A (en) | 1981-06-24 | 1983-03-15 | M&T Chemicals Inc. | Acid copper electroplating baths containing brightening and leveling additives |
EP0076569B1 (en) | 1981-10-01 | 1986-08-27 | EMI Limited | Electroplating arrangements |
JPS58182823A (en) | 1982-04-21 | 1983-10-25 | Nec Corp | Plating apparatus for semiconductor wafer |
US4489740A (en) | 1982-12-27 | 1984-12-25 | General Signal Corporation | Disc cleaning machine |
US4428815A (en) | 1983-04-28 | 1984-01-31 | Western Electric Co., Inc. | Vacuum-type article holder and methods of supportively retaining articles |
US4789445A (en) | 1983-05-16 | 1988-12-06 | Asarco Incorporated | Method for the electrodeposition of metals |
US4510176A (en) | 1983-09-26 | 1985-04-09 | At&T Bell Laboratories | Removal of coating from periphery of a semiconductor wafer |
US4518678A (en) | 1983-12-16 | 1985-05-21 | Advanced Micro Devices, Inc. | Selective removal of coating material on a coated substrate |
US4559717A (en) * | 1984-02-21 | 1985-12-24 | The United States Of America As Represented By The Secretary Of Commerce | Flexure hinge |
US4519846A (en) | 1984-03-08 | 1985-05-28 | Seiichiro Aigo | Process for washing and drying a semiconductor element |
US4653975A (en) * | 1985-01-22 | 1987-03-31 | Gmf Robotics Corporation | Robot with counterbalance mechanism having multiple attachment locations |
US4693805A (en) | 1986-02-14 | 1987-09-15 | Boe Limited | Method and apparatus for sputtering a dielectric target or for reactive sputtering |
US4732785A (en) | 1986-09-26 | 1988-03-22 | Motorola, Inc. | Edge bead removal process for spin on films |
JPS63118093A (en) | 1986-11-05 | 1988-05-23 | Tanaka Electron Ind Co Ltd | Method for tinning electronic parts |
DE3704505A1 (en) * | 1987-02-13 | 1988-08-25 | Leybold Ag | INSERT UNIT FOR VACUUM SYSTEMS |
US4753128A (en) * | 1987-03-09 | 1988-06-28 | Gmf Robotics Corporation | Robot with spring pivot balancing mechanism |
US5230743A (en) | 1988-05-25 | 1993-07-27 | Semitool, Inc. | Method for single wafer processing in which a semiconductor wafer is contacted with a fluid |
US5224504A (en) | 1988-05-25 | 1993-07-06 | Semitool, Inc. | Single wafer processor |
US5235995A (en) | 1989-03-27 | 1993-08-17 | Semitool, Inc. | Semiconductor processor apparatus with dynamic wafer vapor treatment and particulate volatilization |
US5092975A (en) | 1988-06-14 | 1992-03-03 | Yamaha Corporation | Metal plating apparatus |
US5316974A (en) | 1988-12-19 | 1994-05-31 | Texas Instruments Incorporated | Integrated circuit copper metallization process using a lift-off seed layer and a thick-plated conductor layer |
US5039381A (en) | 1989-05-25 | 1991-08-13 | Mullarkey Edward J | Method of electroplating a precious metal on a semiconductor device, integrated circuit or the like |
US5162260A (en) | 1989-06-01 | 1992-11-10 | Hewlett-Packard Company | Stacked solid via formation in integrated circuit systems |
US5055425A (en) | 1989-06-01 | 1991-10-08 | Hewlett-Packard Company | Stacked solid via formation in integrated circuit systems |
US5155336A (en) | 1990-01-19 | 1992-10-13 | Applied Materials, Inc. | Rapid thermal heating apparatus and method |
US5222310A (en) | 1990-05-18 | 1993-06-29 | Semitool, Inc. | Single wafer processor with a frame |
US5220849A (en) * | 1990-06-04 | 1993-06-22 | Akr S.A., A Corp. Of Republic Of France | Gravitational torque compensation system for robot arms |
US5259407A (en) | 1990-06-15 | 1993-11-09 | Matrix Inc. | Surface treatment method and apparatus for a semiconductor wafer |
US5252807A (en) | 1990-07-02 | 1993-10-12 | George Chizinsky | Heated plate rapid thermal processor |
US5256274A (en) | 1990-08-01 | 1993-10-26 | Jaime Poris | Selective metal electrodeposition process |
US5368711A (en) | 1990-08-01 | 1994-11-29 | Poris; Jaime | Selective metal electrodeposition process and apparatus |
JP2524436B2 (en) | 1990-09-18 | 1996-08-14 | インターナショナル・ビジネス・マシーンズ・コーポレイション | Surface treatment method |
JPH04131395A (en) | 1990-09-21 | 1992-05-06 | Toshiba Corp | Method and device for plating semiconductor wafer |
EP0496605B1 (en) | 1991-01-24 | 2001-08-01 | Wako Pure Chemical Industries Ltd | Surface treating solutions for semiconductors |
JP2697773B2 (en) | 1991-03-11 | 1998-01-14 | 日本エレクトロプレイテイング・エンジニヤース 株式会社 | Plating method |
JPH0544075A (en) | 1991-08-15 | 1993-02-23 | Nippon Riironaale Kk | Copper striking method substituted for electroless copper plating |
JP3200468B2 (en) | 1992-05-21 | 2001-08-20 | 日本エレクトロプレイテイング・エンジニヤース株式会社 | Wafer plating equipment |
JP2654314B2 (en) | 1992-06-04 | 1997-09-17 | 東京応化工業株式会社 | Backside cleaning device |
JPH0617291A (en) | 1992-07-03 | 1994-01-25 | Nec Corp | Metal plating device |
US5328589A (en) | 1992-12-23 | 1994-07-12 | Enthone-Omi, Inc. | Functional fluid additives for acid copper electroplating baths |
US5718813A (en) | 1992-12-30 | 1998-02-17 | Advanced Energy Industries, Inc. | Enhanced reactive DC sputtering system |
US5608943A (en) | 1993-08-23 | 1997-03-11 | Tokyo Electron Limited | Apparatus for removing process liquid |
US5415890A (en) | 1994-01-03 | 1995-05-16 | Eaton Corporation | Modular apparatus and method for surface treatment of parts with liquid baths |
US5625170A (en) | 1994-01-18 | 1997-04-29 | Nanometrics Incorporated | Precision weighing to monitor the thickness and uniformity of deposited or etched thin film |
JP3377849B2 (en) | 1994-02-02 | 2003-02-17 | 日本エレクトロプレイテイング・エンジニヤース株式会社 | Wafer plating equipment |
US5528118A (en) | 1994-04-01 | 1996-06-18 | Nikon Precision, Inc. | Guideless stage with isolated reaction stage |
US5651865A (en) | 1994-06-17 | 1997-07-29 | Eni | Preferential sputtering of insulators from conductive targets |
US5705223A (en) | 1994-07-26 | 1998-01-06 | International Business Machine Corp. | Method and apparatus for coating a semiconductor wafer |
US5516412A (en) | 1995-05-16 | 1996-05-14 | International Business Machines Corporation | Vertical paddle plating cell |
US5807469A (en) | 1995-09-27 | 1998-09-15 | Intel Corporation | Flexible continuous cathode contact circuit for electrolytic plating of C4, tab microbumps, and ultra large scale interconnects |
US5746565A (en) * | 1996-01-22 | 1998-05-05 | Integrated Solutions, Inc. | Robotic wafer handler |
US5838121A (en) | 1996-11-18 | 1998-11-17 | Applied Materials, Inc. | Dual blade robot |
JPH1180989A (en) | 1997-09-02 | 1999-03-26 | Oki Electric Ind Co Ltd | Plating apparatus |
US6024856A (en) | 1997-10-10 | 2000-02-15 | Enthone-Omi, Inc. | Copper metallization of silicon wafers using insoluble anodes |
US6179983B1 (en) | 1997-11-13 | 2001-01-30 | Novellus Systems, Inc. | Method and apparatus for treating surface including virtual anode |
US6126798A (en) | 1997-11-13 | 2000-10-03 | Novellus Systems, Inc. | Electroplating anode including membrane partition system and method of preventing passivation of same |
US6159354A (en) | 1997-11-13 | 2000-12-12 | Novellus Systems, Inc. | Electric potential shaping method for electroplating |
US6027631A (en) | 1997-11-13 | 2000-02-22 | Novellus Systems, Inc. | Electroplating system with shields for varying thickness profile of deposited layer |
US6156167A (en) | 1997-11-13 | 2000-12-05 | Novellus Systems, Inc. | Clamshell apparatus for electrochemically treating semiconductor wafers |
US6113771A (en) | 1998-04-21 | 2000-09-05 | Applied Materials, Inc. | Electro deposition chemistry |
AU3756299A (en) * | 1998-04-23 | 1999-11-08 | Omnific International, Ltd | Specialized actuators driven by oscillatory transducers |
US6071388A (en) | 1998-05-29 | 2000-06-06 | International Business Machines Corporation | Electroplating workpiece fixture having liquid gap spacer |
DE19962247A1 (en) * | 1999-12-22 | 2001-09-20 | Agie Sa | Motion transmission device |
-
2000
- 2000-09-18 US US09/664,607 patent/US6571657B1/en not_active Expired - Fee Related
-
2001
- 2001-09-17 WO PCT/US2001/029004 patent/WO2002022321A2/en unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3627560A1 (en) * | 1986-08-14 | 1988-02-18 | Audi Ag | Program-controlled and sensor-guided production and/or assembly system, in particular industrial robot |
US5100502A (en) * | 1990-03-19 | 1992-03-31 | Applied Materials, Inc. | Semiconductor wafer transfer in processing systems |
US5382885A (en) * | 1993-08-09 | 1995-01-17 | The University Of British Columbia | Motion scaling tele-operating system with force feedback suitable for microsurgery |
US5811951A (en) * | 1996-10-14 | 1998-09-22 | Regents Of The University Of California | High precision redundant robotic manipulator |
US5975834A (en) * | 1997-07-16 | 1999-11-02 | Daihen Corporation | Two-armed transfer robot |
WO1999016111A1 (en) * | 1997-09-22 | 1999-04-01 | Applied Materials, Inc. | Substrate clamping apparatus |
Also Published As
Publication number | Publication date |
---|---|
US6571657B1 (en) | 2003-06-03 |
WO2002022321A2 (en) | 2002-03-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2002022321A3 (en) | Multiple blade robot adjustment apparatus and associated method | |
WO2004008493A3 (en) | Method and apparatus for supporting semiconductor wafers | |
AU3557599A (en) | Apparatus, system, and method for preventing computer vision syndrome | |
AU7718300A (en) | Apparatus and method for performing laser thermal keratoplasty with minimized regression | |
AU2002240435A1 (en) | System, apparatus and method for location-based instant messaging | |
AU8036898A (en) | Soi substrate and process for preparing the same, and semiconductor device and process for preparing the same | |
AU2003217103A1 (en) | System, method and apparatus for federated single sign-on services | |
AU2002354485A1 (en) | Phosphor single crystal substrate and method for preparing the same, and nitride semiconductor component using the same | |
AU2002300573A1 (en) | Photovoltaic Device and Method for Preparing the Same | |
MY123280A (en) | Method and apparatus for securely holding a substrate during dicing. | |
WO2001093310A3 (en) | Semiconductor device with vertical electronic injection and method for making same | |
AU2002300570A1 (en) | Photovoltaic Device and Method for Preparing the Same | |
AU2002318912A1 (en) | Apparatus, process and method for mounting and treating a substrate | |
SG81300A1 (en) | Arrangement configured to support substrate during dicing process, and apparatus and method for cutting tapeless substrate using the arrangement | |
EP1087040A4 (en) | Method for producing silicon single crystal and apparatus for producing the same, and single crystal and wafer produced with the method | |
AU2003235846A1 (en) | Substrate processing device, substrate processing method, and nozzle | |
AU3054999A (en) | Method and apparatus for wafer processing, and method and apparatus for exposure | |
WO2003058679A3 (en) | System and method of processing composite substrate within a high throughput reactor | |
AU2002334189A1 (en) | Method and apparatus for cutting a poly (vinyl alcohol) member | |
AU2000276023A1 (en) | Novel formulation for counteracting an ethylene response in plants, preparation process thereof, and method using the same | |
AU2003222175A1 (en) | System, method and apparatus for regulating vacuum supplied to surgical tools | |
AU2003272894A1 (en) | Method for forming thin film, apparatus for forming thin film, and method for monitoring thin film forming process | |
SG85684A1 (en) | Method and device for separating products, mounted on a common substrate, from each other along (a) cutting line (s) | |
AU2003302297A1 (en) | Device, program, and method for supporting electronic mail creation | |
AUPP246498A0 (en) | Apparatus/method for reforming cultivation rows |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): JP KR |
|
AK | Designated states |
Kind code of ref document: A3 Designated state(s): JP KR |
|
NENP | Non-entry into the national phase |
Ref country code: JP |