WO2002018100A2 - Method and apparatus for measuring a polishing condition - Google Patents
Method and apparatus for measuring a polishing condition Download PDFInfo
- Publication number
- WO2002018100A2 WO2002018100A2 PCT/IB2001/001532 IB0101532W WO0218100A2 WO 2002018100 A2 WO2002018100 A2 WO 2002018100A2 IB 0101532 W IB0101532 W IB 0101532W WO 0218100 A2 WO0218100 A2 WO 0218100A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- polishing
- rotating
- picture
- determining
- taking
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
Definitions
- the present invention generally relates to a method and an apparatus for measuring a polishing condition of a surface of an object, and more particularly to a method and an apparatus for measuring a polishing condition of a wafer surface during chemical mechanical polishing (CMP) .
- CMP chemical mechanical polishing
- Integrated circuits are typically formed on substrates, particularly silicon wafers.
- the integrated circuits are formed by depositing different layers of conducting, semiconducting or insulating nature. After deposition of each layer, features of the electrical circuits are incorporated, e.g. by etching. During the sequential procedure, the upper surface of the substrate becomes more and more non-planar. Thus, the surface of the substrate has to be planarized in order to provide a substantially planar surface.
- planarization can be achieved by chemical mechanical polishing (CMP) .
- CMP chemical mechanical polishing
- a substrate is mounted to a carrier or polishing head.
- the exposed surface of the substrate is moved against a rotating polishing pad on a polishing platen.
- a polishing slurry is distributed over the polishing pad.
- the slurry includes an abrasive component and at least one chemically reactive agent; thus, an abrasive chemical solution is provided at the interface between the pad and the wafer in order to optimize the polishing.
- pre and/or post measurement of wafers with either manual or automatic feedback control is performed.
- Systems are available by which it is possible to measure wet wafers immediately before and after polishing. Due to the monitoring of the condition of the surface before and after polishing it is possible to change the polishing parameters, and therefore, to optimize the polishing during a series production.
- pre and/or post measurement method bears the disadvantage that the first or the first few wafers have to be polished without optimized parameters - they are polished "blind" .
- the appearance of the wafers might vary; the pre and/or post measurement method is not capable to consider such variations of the wafers .
- the present invention seeks to provide a method and an apparatus which mitigate or avoid these and other disadvantages and limitations of the prior art.
- FIG. 1 is a schematic drawing of a part of a chemical mechanical polishing apparatus according to the present invention
- FIG. 2 shows a part of a wafer
- FIG. 3 shows an enlarged view of a part of Fig. 2; and FIG. 4 shows a flow-chart diagram of a method according to the present invention.
- a method for measuring a polishing condition of a surface of an object comprises the steps of: selecting a location of a measurement site on the surface; taking a picture of the surface within the measurement site; and analyzing the picture, thereby determining the polishing condition of the surface.
- an apparatus for measuring a polishing condition of a surface of an object comprises: means for selecting a location of a measurement site on the surface; means for taking a picture of the surface within the measurement site; and means for analyzing the picture and for determining the polishing condition of the surface.
- a polishing platen 10 carries a polishing pad 12.
- a window 14 is provided in the polishing platen 10 and in the polishing pad 12.
- a wafer 16 that is carried by a polishing head (not shown) is positioned.
- an XY stage 18 is provided that carries a light source 20 and a light detector 22.
- the light source 20 and the light detector 22 may be positioned closer together and/or in different angles to the wafer 16 than illustrated in FIG. 1. Variation of the arrangement may be used to vary the optical properties. Further, it is also possible to position the light source 20 and the light detector 22 much closer to the wafer 16. This allows application of different polishing methods.
- the surface of the wafer 16 is oriented before it is loaded on the polishing head.
- a single polishing head or a plurality of polishing heads may be provided.
- the rotational and/or translational position of the polishing head may be monitored by a device that may be included on the polishing head or on a shaft of the polishing head. Further, a device may be included on the polishing platen 10 in order to monitor the real time rotational position of the polishing platen 10. Therefore, the real time rotational position of the polishing head, the real time position of the polishing head in any translational motion, and the real time rotational position of the polishing platen 10 is known.
- the camera 22 should be a high speed camera 22, since normal polishing processes use fifteen to two hundred revolutions per minute. Thus, in a real time scenario, time is very short in order to take a picture of a particular measurement site 24.
- a microscope may also be used as the front end of the optical acquisition system.
- the measurement site 24 on the wafer 14 is illuminated by a light source 20.
- the light source 20 and the light detector 22 are mounted on a small XY stage 18 for fine positioning.
- the light source 20 and camera 22 can be mounted in any position relative to each other and the wafer 16 that is found to be advantageous.
- the window 14 in the polishing pad 12 is transparent to the wave length of light to be used. Further, the effect of the polishing slurry on the optical behavior has to be considered. In general, it is desirable to use lower wave lengths of light, since such lower wave lengths provide better optical resolution. However, the wave lengths must be compatible with the window material and any chemicals used in the slurry, which has to be considered.
- the picture After taking a picture of the part of the wafer 16 predicted to contain the measurement site, the picture is analyzed. For such analyzing, the picture is sent to a computer with pattern recognition software for exact measurement location determination; then, the appropriate pixels of interest are analyzed. The analysis of the pixels provides information e.g. on the reflectivity and on the color.
- the reflectivity can be used in order to find an endpoint during a metal polishing process; such an endpoint is reached when the reflectivity changes due to the removal of the metal layer.
- Oxide or nitride layer thickness can be found by determining the color of the area being analyzed.
- FIG. 2 shows schematically a typical surface of a wafer 16 to be polished.
- the regions 26, 28, 30, 32, 34 symbolize different circuitry features on the wafer 16.
- the numeral 24 designates a measurement site which is to be analyzed during polishing. After taking a picture through the window 14 in the pad 12, this wide field picture is analyzed by a pattern recognition software.
- FIG. 3 shows an enlarged view of the measurement site 24.
- a fine alignment can be achieved, and e.g. the colors and intensities of the pixels of interest within a defined area can be recorded.
- the recorded information is processed as appropriate, including analyzing the spectrum, the rate of color change, the color alone, the intensity, etc.
- a method and an apparatus for measuring any specified point on the wafer including the metrology measurement sites while the process was running.
- the method and apparatus give an exact endpoint by measuring the actual remaining film thickness or reflectivity of specific structures in real time. Additionally, it should be noted that the apparatus is capable of providing pre and post polishing measurements.
- FIG. 4 shows a flow-chart diagram of method 100 for measuring a polishing condition of a surface (e.g., thickness) of an object (e.g., wafer 16).
- Method 100 comprises the steps of selecting 110 a location of measurement site 24 on the surface; taking 120 a picture of the surface within measurement site 24; and analyzing 130 the picture to determine the polishing condition of the surface.
- the step of selecting 110 comprises orienting 112 the surface to be polished; loading 114 the object on a polishing head; and monitoring 116 relative positions of the polishing head.
- the step of taking 120 a picture comprises providing 122 window 14 in polishing platen 10 (cf . FIG. 1); illuminating 124 the surface through window 14; and taking 125 a digital picture.
- the step of analyzing 130 comprises determining 132 pixels of interest by using a pattern recognition software (well known in the art, therefore not illustrated) ; and analyzing 134 the pixels of interest .
- a pattern recognition software well known in the art, therefore not illustrated
- the step of analyzing 130 comprises determining 136 a reflectivity as the polishing condition, or optionally, determining 138 a color (e.g., of the wafer) as polishing condition.
- method 100 further comprising the steps of rotating the object; and taking pictures in synchronization with the rotating.
- polishing platen 10 is rotated and pictures are taken in synchronization with the rotating of the platen.
- Rotating can be combined so that, optionally, method comprises rotating the object and the polishing platen; and taking pictures in synchronization with the rotating.
- the step of selecting preferably comprises monitoring a real time rotational position of the polishing head; monitoring a real time translational position of the polishing head; and monitoring a real time rotational position of the polishing platen.
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2003-7002903A KR20030024920A (en) | 2000-08-31 | 2001-08-27 | Method and apparatus for measuring a polishing condition |
JP2002523057A JP2004507900A (en) | 2000-08-31 | 2001-08-27 | Method and apparatus for measuring polishing condition |
EP01956736A EP1315598A2 (en) | 2000-08-31 | 2001-08-27 | Method and apparatus for measuring a polishing condition |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US65289800A | 2000-08-31 | 2000-08-31 | |
US09/652,898 | 2000-08-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002018100A2 true WO2002018100A2 (en) | 2002-03-07 |
WO2002018100A3 WO2002018100A3 (en) | 2002-05-16 |
Family
ID=24618652
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB2001/001532 WO2002018100A2 (en) | 2000-08-31 | 2001-08-27 | Method and apparatus for measuring a polishing condition |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1315598A2 (en) |
JP (1) | JP2004507900A (en) |
KR (1) | KR20030024920A (en) |
TW (1) | TW534854B (en) |
WO (1) | WO2002018100A2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005025804A1 (en) | 2003-09-10 | 2005-03-24 | Ebara Corporation | Polished state monitoring apparatus and polishing apparatus using the same |
CN1302522C (en) * | 2002-05-15 | 2007-02-28 | 旺宏电子股份有限公司 | Terminal detection system for chemical and mechanical polisher |
CN114746214A (en) * | 2019-12-03 | 2022-07-12 | 株式会社荏原制作所 | Polishing apparatus and polishing method |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8547538B2 (en) * | 2011-04-21 | 2013-10-01 | Applied Materials, Inc. | Construction of reference spectra with variations in environmental effects |
JP2013122956A (en) * | 2011-12-09 | 2013-06-20 | Disco Abrasive Syst Ltd | Processing device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999064205A1 (en) * | 1998-06-08 | 1999-12-16 | Speedfam-Ipec Corporation | Method and apparatus for endpoint detection for chemical mechanical polishing |
JP2000033561A (en) * | 1998-07-21 | 2000-02-02 | Dainippon Screen Mfg Co Ltd | End point detecting device and end point detecting method |
US6102775A (en) * | 1997-04-18 | 2000-08-15 | Nikon Corporation | Film inspection method |
US6142855A (en) * | 1997-10-31 | 2000-11-07 | Canon Kabushiki Kaisha | Polishing apparatus and polishing method |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11198033A (en) * | 1997-10-31 | 1999-07-27 | Canon Inc | Polishing device and polishing method |
-
2001
- 2001-08-21 TW TW090120554A patent/TW534854B/en not_active IP Right Cessation
- 2001-08-27 KR KR10-2003-7002903A patent/KR20030024920A/en not_active Application Discontinuation
- 2001-08-27 EP EP01956736A patent/EP1315598A2/en not_active Ceased
- 2001-08-27 JP JP2002523057A patent/JP2004507900A/en active Pending
- 2001-08-27 WO PCT/IB2001/001532 patent/WO2002018100A2/en not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6102775A (en) * | 1997-04-18 | 2000-08-15 | Nikon Corporation | Film inspection method |
US6142855A (en) * | 1997-10-31 | 2000-11-07 | Canon Kabushiki Kaisha | Polishing apparatus and polishing method |
WO1999064205A1 (en) * | 1998-06-08 | 1999-12-16 | Speedfam-Ipec Corporation | Method and apparatus for endpoint detection for chemical mechanical polishing |
JP2000033561A (en) * | 1998-07-21 | 2000-02-02 | Dainippon Screen Mfg Co Ltd | End point detecting device and end point detecting method |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 05, 14 September 2000 (2000-09-14) -& JP 2000 033561 A (DAINIPPON SCREEN MFG CO LTD), 2 February 2000 (2000-02-02) * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1302522C (en) * | 2002-05-15 | 2007-02-28 | 旺宏电子股份有限公司 | Terminal detection system for chemical and mechanical polisher |
WO2005025804A1 (en) | 2003-09-10 | 2005-03-24 | Ebara Corporation | Polished state monitoring apparatus and polishing apparatus using the same |
US7300332B2 (en) | 2003-09-10 | 2007-11-27 | Ebara Corporation | Polished state monitoring apparatus and polishing apparatus using the same |
CN114746214A (en) * | 2019-12-03 | 2022-07-12 | 株式会社荏原制作所 | Polishing apparatus and polishing method |
Also Published As
Publication number | Publication date |
---|---|
TW534854B (en) | 2003-06-01 |
KR20030024920A (en) | 2003-03-26 |
JP2004507900A (en) | 2004-03-11 |
WO2002018100A3 (en) | 2002-05-16 |
EP1315598A2 (en) | 2003-06-04 |
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