WO2002017362A8 - Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices - Google Patents

Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices

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Publication number
WO2002017362A8
WO2002017362A8 PCT/US2001/026298 US0126298W WO0217362A8 WO 2002017362 A8 WO2002017362 A8 WO 2002017362A8 US 0126298 W US0126298 W US 0126298W WO 0217362 A8 WO0217362 A8 WO 0217362A8
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor
devices
semiconductors
doped
width
Prior art date
Application number
PCT/US2001/026298
Other languages
French (fr)
Other versions
WO2002017362A2 (en
Inventor
Charles M Lieber
Ying Cui
Xiangfeng Duan
Yung-Sheng Huang
Original Assignee
Harvard College
Charles M Lieber
Ying Cui
Xiangfeng Duan
Yung-Sheng Huang
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Harvard College, Charles M Lieber, Ying Cui, Xiangfeng Duan, Yung-Sheng Huang filed Critical Harvard College
Priority to EP01966109A priority Critical patent/EP1314189B1/en
Priority to CA2417992A priority patent/CA2417992C/en
Priority to MXPA03001605A priority patent/MXPA03001605A/en
Priority to JP2002521336A priority patent/JP5013650B2/en
Priority to AU2001286649A priority patent/AU2001286649B2/en
Priority to KR1020087015375A priority patent/KR100984585B1/en
Priority to KR1020037002636A priority patent/KR100791732B1/en
Priority to AU8664901A priority patent/AU8664901A/en
Publication of WO2002017362A2 publication Critical patent/WO2002017362A2/en
Publication of WO2002017362A8 publication Critical patent/WO2002017362A8/en
Priority to AU2007202897A priority patent/AU2007202897B2/en

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    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]

Abstract

La présente invention concerne semi-conducteur dopé dans la masse, en l'occurrence, un monocristal, un semi-conducteur dopé dans la masse, de forme allongée et présentant en un point quelconque de son axe longitudinal une plus grande dimension en coupe de moins de 500 nm, ou enfin d'un semi-conducteur autonome dopé dans la masse dont au moins une partie présente une largeur de moins de 500 nm. Ce semi-conducteur peut comprendre un noyau intérieur fait d'un premier matériau semi-conducteur et une enveloppe extérieure en un matériau différent de celui du premier semi-conducteur. Ce semi-conducteur peut être de forme allongée et présenter en coupe en un point quelconque de son axe longitudinal un rapport [longueur]/[plus grande largeur] supérieur à 4:1, à 10:1, à 100:1, ou même à 1000:1. La plus petite largeur sur une partie au moins de ce semi-conducteur peut être inférieure à 200 nm, 150 nm, 100 nm, 80 nm, 70 nm, 60 nm, 40 nm, 20 nm, 10 nm, ou même à 5 nm. Ce semi-conducteur monocristal ou autonome peut être légèrement ou fortement dopé N ou P, le dopage étant réalisé pendant le tirage. Un tel semi-conducteur peut s'intégrer à un dispositif s'incorporant lui-même à divers dispositifs et combinaisons de dispositifs, diverses techniques d'assemblage pouvant être mises en oeuvre pour la fabrication. Ces semi-conducteurs et matrices de semi-conducteurs se prêtent à des combinaisons de dispositifs, par exemple pour former une jonction P-N croisée de dispositifs. Réalisés sous certaines dimensions ces dispositifs peuvent être le siège de phénomènes quantiques et notamment un confinement, la largeur choisie déterminant la longueur d'ondes de la lumière émise. Ces semi-conducteurs et dispositifs conviennent particulièrement à diverses applications.The present invention relates to semiconductor doped in the mass, in this case, a single crystal, a semiconductor doped in the mass, of elongated shape and having at any point of its longitudinal axis a greater dimension in section of less of 500 nm, or finally of an autonomous semiconductor doped in the mass of which at least a part has a width of less than 500 nm. This semiconductor may include an inner core made of a first semiconductor material and an outer shell of a material different from that of the first semiconductor. This semiconductor can be of elongated shape and present in section at any point on its longitudinal axis a ratio [length] / [greatest width] greater than 4: 1, 10: 1, 100: 1, or even at 1000: 1. The smallest width on at least part of this semiconductor can be less than 200 nm, 150 nm, 100 nm, 80 nm, 70 nm, 60 nm, 40 nm, 20 nm, 10 nm, or even 5 nm . This monocrystalline or autonomous semiconductor can be lightly or strongly doped N or P, doping being carried out during the drawing. Such a semiconductor can be integrated into a device which incorporates itself into various devices and combinations of devices, various assembly techniques being able to be used for manufacturing. These semiconductors and semiconductor arrays lend themselves to combinations of devices, for example to form a P-N cross junction of devices. Produced in certain dimensions, these devices can be the site of quantum phenomena and in particular confinement, the width chosen determining the wavelength of the light emitted. These semiconductors and devices are particularly suitable for various applications.

PCT/US2001/026298 2000-08-22 2001-08-22 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices WO2002017362A2 (en)

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EP01966109A EP1314189B1 (en) 2000-08-22 2001-08-22 Electrical device comprising doped semiconductor nanowires and method for its production
CA2417992A CA2417992C (en) 2000-08-22 2001-08-22 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
MXPA03001605A MXPA03001605A (en) 2000-08-22 2001-08-22 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices.
JP2002521336A JP5013650B2 (en) 2000-08-22 2001-08-22 Doped elongated semiconductors, growth of such semiconductors, devices containing such semiconductors, and the manufacture of such devices
AU2001286649A AU2001286649B2 (en) 2000-08-22 2001-08-22 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
KR1020087015375A KR100984585B1 (en) 2000-08-22 2001-08-22 Nanosensors
KR1020037002636A KR100791732B1 (en) 2000-08-22 2001-08-22 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
AU8664901A AU8664901A (en) 2000-08-22 2001-08-22 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
AU2007202897A AU2007202897B2 (en) 2000-08-22 2007-06-22 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices

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US29189601P 2001-05-18 2001-05-18
US29212101P 2001-05-18 2001-05-18
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US8981452B2 (en) 2004-06-08 2015-03-17 Sandisk Corporation Methods and devices for forming nanostructure monolayers and devices including such monolayers
US9149836B2 (en) 2004-06-08 2015-10-06 Sandisk Corporation Compositions and methods for modulation of nanostructure energy levels

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