WO2002017002A3 - Bent electro-absorption modulator - Google Patents

Bent electro-absorption modulator Download PDF

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Publication number
WO2002017002A3
WO2002017002A3 PCT/DK2001/000544 DK0100544W WO0217002A3 WO 2002017002 A3 WO2002017002 A3 WO 2002017002A3 DK 0100544 W DK0100544 W DK 0100544W WO 0217002 A3 WO0217002 A3 WO 0217002A3
Authority
WO
WIPO (PCT)
Prior art keywords
extinction
refractive index
modulated
absorption
losses
Prior art date
Application number
PCT/DK2001/000544
Other languages
French (fr)
Other versions
WO2002017002A2 (en
Inventor
Svend Bischoff
Peter M W Skovgaard
Original Assignee
Univ Danmarks Tekniske
Svend Bischoff
Peter M W Skovgaard
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Danmarks Tekniske, Svend Bischoff, Peter M W Skovgaard filed Critical Univ Danmarks Tekniske
Priority to AU2001279610A priority Critical patent/AU2001279610A1/en
Publication of WO2002017002A2 publication Critical patent/WO2002017002A2/en
Publication of WO2002017002A3 publication Critical patent/WO2002017002A3/en

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the refractive index
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the optical absorption
    • G02F1/0157—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the optical absorption using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01716—Optically controlled superlattice or quantum well devices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/06—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide
    • G02F2201/063—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide ridge; rib; strip loaded
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/02—Function characteristic reflective
    • G02F2203/026—Function characteristic reflective attenuated or frustrated internal reflection

Abstract

The present invention relates to a method and a device for modulating optical signals based on modulating bending losses in bend, quantum well semiconductor waveguide sections. The complex refractive index of the optical active semiconducting components of the waveguide section is modulated by applying a variable electric or electronmagnetic field. The modulation of the complex refractive index results in a modulation of the refractive index contrast and the absorption coefficient for the waveguide at the frequency of the light. By carefully adjusting the composition of the semiconducting components and the applied electric field in relation to the frequency of the modulated radiation, the bending losses (and possibly coupling losses) will provide extinction of light guided by the bent waveguide section. The refractive index contract may be modulated while keeping the absorption coefficient substantially constant and small, whereby the guided light can be modulated only by bending losses. Alternatively, the invention may be applied to enhance the extinction ratio of existing absorption modulators such as Electro-Absorption Modulators (EAMs) in which case extinction by absorption and extinction by bendng losses co-operates to provide more compact modulators with improved performance (extinction) and speed.
PCT/DK2001/000544 2000-08-18 2001-08-17 Bent electro-absorption modulator WO2002017002A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001279610A AU2001279610A1 (en) 2000-08-18 2001-08-17 Bent electro-absorption modulator

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US22612400P 2000-08-18 2000-08-18
US60/226,124 2000-08-18

Publications (2)

Publication Number Publication Date
WO2002017002A2 WO2002017002A2 (en) 2002-02-28
WO2002017002A3 true WO2002017002A3 (en) 2002-05-30

Family

ID=22847651

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DK2001/000544 WO2002017002A2 (en) 2000-08-18 2001-08-17 Bent electro-absorption modulator

Country Status (3)

Country Link
US (2) US6512860B2 (en)
AU (1) AU2001279610A1 (en)
WO (1) WO2002017002A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE521023C2 (en) * 2000-07-07 2003-09-23 Ericsson Telefon Ab L M Optical device and manufacture thereof
KR100350414B1 (en) * 2000-10-10 2002-08-28 (주)젠포토닉스 Digital thermo-optic switch coupled with a variable optical attenuator
US6661556B2 (en) * 2001-08-24 2003-12-09 T-Networks, Inc. Stabilizing electro-absorption modulators (EAM's) performance by maintaining constant absorption with the use of integrated tap couplers
JP5488226B2 (en) * 2010-06-10 2014-05-14 富士通オプティカルコンポーネンツ株式会社 Mach-Zehnder type optical modulator
US8498502B2 (en) 2010-12-17 2013-07-30 Fujitsu Limited Device for phase modulation
WO2018096035A1 (en) * 2016-11-23 2018-05-31 Rockley Photonics Limited Optoelectronic device
KR102366164B1 (en) * 2015-12-15 2022-02-22 한국전자통신연구원 Mach-zehnder electro-optic modulator and fabrication method of the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6088500A (en) * 1997-04-11 2000-07-11 Trw Inc. Expanded mode wave guide semiconductor modulation
US6243525B1 (en) * 1998-02-13 2001-06-05 Jds Uniphase Photonics C.V. Optical waveguide device comprising at least one bent waveguide channel

Family Cites Families (8)

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Publication number Priority date Publication date Assignee Title
US2540839A (en) * 1940-07-18 1951-02-06 Bell Telephone Labor Inc Wave guide system
US4810049A (en) 1987-04-02 1989-03-07 American Telephone And Telegraph Company, At&T Bell Laboratories Reducing bend and coupling losses in integrated optical waveguides
DE4445848A1 (en) 1994-12-22 1996-06-27 Sel Alcatel Ag Optical room switch with short overall length
JP3583846B2 (en) 1995-12-26 2004-11-04 富士通株式会社 Method and apparatus for driving optical modulator and optical communication system
FR2749945B1 (en) * 1996-06-18 1998-09-11 Toussaere Eric ELECTROOPTIC COMPONENT
JPH11167032A (en) 1997-12-03 1999-06-22 Nippon Telegr & Teleph Corp <Ntt> Curved optical waveguide circuit
JPH11183742A (en) 1997-12-24 1999-07-09 Nippon Telegr & Teleph Corp <Ntt> Semiconductor waveguide type polarized wave rotating element
JPH11305078A (en) * 1998-04-27 1999-11-05 Oki Electric Ind Co Ltd Optical transmission and reception module

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6088500A (en) * 1997-04-11 2000-07-11 Trw Inc. Expanded mode wave guide semiconductor modulation
US6243525B1 (en) * 1998-02-13 2001-06-05 Jds Uniphase Photonics C.V. Optical waveguide device comprising at least one bent waveguide channel

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
G J VELDHUIS ET AL: "Integrated optic intensity modulator based on a bent channel waveguide", OPTICS COMMUNICATIONS, vol. 168, 1999, pages 481 - 491, XP002902300 *

Also Published As

Publication number Publication date
US20030123772A1 (en) 2003-07-03
US20020131664A1 (en) 2002-09-19
US6512860B2 (en) 2003-01-28
WO2002017002A2 (en) 2002-02-28
AU2001279610A1 (en) 2002-03-04

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