WO2002008832A3 - Method for an improved developing process in wafer photolithography - Google Patents

Method for an improved developing process in wafer photolithography

Info

Publication number
WO2002008832A3
WO2002008832A3 PCT/US2001/023470 US0123470W WO0208832A3 WO 2002008832 A3 WO2002008832 A3 WO 2002008832A3 US 0123470 W US0123470 W US 0123470W WO 0208832 A3 WO0208832 A3 WO 0208832A3
Authority
WO
WIPO (PCT)
Prior art keywords
polymer
developer
charge
rinsing
sudden change
Prior art date
Application number
PCT/US2001/023470
Other languages
French (fr)
Other versions
WO2002008832A2 (en
Inventor
Jae Heon Park
Jung Suk Bang
Original Assignee
Silicon Valley Group
Jae Heon Park
Jung Suk Bang
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silicon Valley Group, Jae Heon Park, Jung Suk Bang filed Critical Silicon Valley Group
Priority to EP01954972.4A priority Critical patent/EP1303794B1/en
Priority to CN018134122A priority patent/CN1444740B/en
Priority to AU2001277183A priority patent/AU2001277183A1/en
Priority to JP2002514470A priority patent/JP2004505301A/en
Priority to KR1020037001165A priority patent/KR100558019B1/en
Publication of WO2002008832A2 publication Critical patent/WO2002008832A2/en
Publication of WO2002008832A3 publication Critical patent/WO2002008832A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck

Abstract

Methods and apparatus are described for improved yield and line width performance for liquid polymers and other materials. A method for minimizing precipitation of developing reactant by lowering a sudden change in pH includes: developing at least a portion of a polymer layer on a substrate with an initial charge of a developer fluid; then rinsing the polymer with an additional charge of the developer fluid so as to controllably minimize a subsequent sudden change in pH; and then rinsing the polymer with a charge of another fluid. A method for achieving a more uniform, quasi-equilibrium succession of states from the introduction of developer chemical to the wafer surface to its removal is also described. The method reduces process-induced defects and improves critical dimension (CD) control.
PCT/US2001/023470 2000-07-25 2001-07-25 Method for an improved developing process in wafer photolithography WO2002008832A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP01954972.4A EP1303794B1 (en) 2000-07-25 2001-07-25 Method for an improved developing process in wafer photolithography
CN018134122A CN1444740B (en) 2000-07-25 2001-07-25 Improved method for developing process in wafer photolithography
AU2001277183A AU2001277183A1 (en) 2000-07-25 2001-07-25 Method for an improved developing process in wafer photolithography
JP2002514470A JP2004505301A (en) 2000-07-25 2001-07-25 Method of improving development process in wafer photolithographic technology
KR1020037001165A KR100558019B1 (en) 2000-07-25 2001-07-25 Method for an improved developing process in wafer photolithography

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/624,712 US6746826B1 (en) 2000-07-25 2000-07-25 Method for an improved developing process in wafer photolithography
US09/624,712 2000-07-25

Publications (2)

Publication Number Publication Date
WO2002008832A2 WO2002008832A2 (en) 2002-01-31
WO2002008832A3 true WO2002008832A3 (en) 2002-05-02

Family

ID=24503036

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/023470 WO2002008832A2 (en) 2000-07-25 2001-07-25 Method for an improved developing process in wafer photolithography

Country Status (7)

Country Link
US (1) US6746826B1 (en)
EP (1) EP1303794B1 (en)
JP (1) JP2004505301A (en)
KR (1) KR100558019B1 (en)
CN (1) CN1444740B (en)
AU (1) AU2001277183A1 (en)
WO (1) WO2002008832A2 (en)

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US6248171B1 (en) * 1998-09-17 2001-06-19 Silicon Valley Group, Inc. Yield and line width performance for liquid polymers and other materials
KR100393118B1 (en) * 2001-02-22 2003-07-31 현만석 A method of forming resist patterns in a semiconductor device and a semiconductor washing liquid used in said method
US7566181B2 (en) * 2004-09-01 2009-07-28 Tokyo Electron Limited Controlling critical dimensions of structures formed on a wafer in semiconductor processing
CN101286015B (en) * 2007-04-12 2011-01-19 上海宏力半导体制造有限公司 Developing method for improving critical dimension uniformity
CN103116251A (en) * 2013-01-18 2013-05-22 清华大学深圳研究生院 Anti-deformation round development nozzle and preparation method thereof

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JPS5888749A (en) * 1981-11-24 1983-05-26 Hitachi Ltd Developing device
JPS5950440A (en) * 1982-09-16 1984-03-23 Fujitsu Ltd Developing method of resist film
US5342738A (en) * 1991-06-04 1994-08-30 Sony Corporation Resist film developing method and an apparatus for carrying out the same
JPH07142344A (en) * 1993-11-12 1995-06-02 Matsushita Electric Ind Co Ltd Method for developing photoresist
EP0794463A2 (en) * 1996-03-05 1997-09-10 Kabushiki Kaisha Toshiba Resist develop process having a post develop dispense step
JPH09297403A (en) * 1996-05-08 1997-11-18 Nittetsu Semiconductor Kk Method for developing photoresist
US5885755A (en) * 1997-04-30 1999-03-23 Kabushiki Kaisha Toshiba Developing treatment apparatus used in the process for manufacturing a semiconductor device, and method for the developing treatment
WO1999053381A1 (en) * 1998-04-15 1999-10-21 Etec Systems, Inc. Photoresist developer and method of development
WO2000016163A2 (en) * 1998-09-17 2000-03-23 Silicon Valley Group, Inc. Method and apparatus for developing photoresist patterns
US6159662A (en) * 1999-05-17 2000-12-12 Taiwan Semiconductor Manufacturing Company Photoresist development method with reduced cycle time and improved performance

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Also Published As

Publication number Publication date
KR20030079912A (en) 2003-10-10
CN1444740A (en) 2003-09-24
CN1444740B (en) 2010-06-23
KR100558019B1 (en) 2006-03-07
JP2004505301A (en) 2004-02-19
EP1303794A2 (en) 2003-04-23
WO2002008832A2 (en) 2002-01-31
AU2001277183A1 (en) 2002-02-05
US6746826B1 (en) 2004-06-08
EP1303794B1 (en) 2013-10-16

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