WO2002007132A1 - Unite d'affichage d'images et procede de fabrication correspondant - Google Patents
Unite d'affichage d'images et procede de fabrication correspondant Download PDFInfo
- Publication number
- WO2002007132A1 WO2002007132A1 PCT/JP2001/006213 JP0106213W WO0207132A1 WO 2002007132 A1 WO2002007132 A1 WO 2002007132A1 JP 0106213 W JP0106213 W JP 0106213W WO 0207132 A1 WO0207132 A1 WO 0207132A1
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- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- light emitting
- image display
- display device
- elements
- Prior art date
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Classifications
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H01—ELECTRIC ELEMENTS
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/13613—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit the semiconductor element being formed on a first substrate and thereafter transferred to the final cell substrate
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- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
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Description
Claims
Priority Applications (9)
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KR1020037000655A KR100862545B1 (ko) | 2000-07-18 | 2001-07-18 | 화상 표시 장치 및 화상 표시 장치의 제조 방법 |
AU2001272740A AU2001272740A1 (en) | 2000-07-18 | 2001-07-18 | Image display unit and production method for image display unit |
EP11002099.7A EP2339650B1 (en) | 2000-07-18 | 2001-07-18 | Production method for light emitting diodes |
EP11002100.3A EP2343737B1 (en) | 2000-07-18 | 2001-07-18 | Image display unit and production method for image display unit |
EP01951901A EP1310934A4 (en) | 2000-07-18 | 2001-07-18 | IMAGE DISPLAY UNIT AND MANUFACTURING PROCESS FOR THE IMAGE DISPLAY UNIT |
US10/066,423 US6613610B2 (en) | 2000-07-18 | 2002-01-30 | Image display unit and method of producing image display unit |
US10/427,815 US7880184B2 (en) | 2000-07-18 | 2003-04-30 | Image display unit |
US11/558,620 US8409886B2 (en) | 2000-07-18 | 2006-11-10 | Method of producing image display unit |
US12/034,415 US7888690B2 (en) | 2000-07-18 | 2008-02-20 | Image display unit with light emitting devices having a resin surrounding the light emitting devices |
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JP2000217953 | 2000-07-18 | ||
JP2000217988 | 2000-07-18 | ||
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JP2000396225 | 2000-12-26 | ||
JP2000-396225 | 2000-12-26 | ||
JP2001200113A JP3906653B2 (ja) | 2000-07-18 | 2001-06-29 | 画像表示装置及びその製造方法 |
JP2001-200113 | 2001-06-29 |
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PCT/JP2001/006213 WO2002007132A1 (fr) | 2000-07-18 | 2001-07-18 | Unite d'affichage d'images et procede de fabrication correspondant |
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US (4) | US6613610B2 (ja) |
EP (4) | EP2341530B1 (ja) |
JP (1) | JP3906653B2 (ja) |
KR (4) | KR100937840B1 (ja) |
CN (1) | CN1229766C (ja) |
AU (1) | AU2001272740A1 (ja) |
TW (1) | TW502463B (ja) |
WO (1) | WO2002007132A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106783648A (zh) * | 2016-12-28 | 2017-05-31 | 歌尔股份有限公司 | 一种led显示屏的制备方法 |
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- 2001-07-18 EP EP11002114.4A patent/EP2341530B1/en not_active Expired - Lifetime
- 2001-07-18 KR KR1020087014808A patent/KR100937840B1/ko active IP Right Grant
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- 2001-07-18 KR KR1020087014809A patent/KR100892578B1/ko active IP Right Grant
- 2001-07-18 KR KR1020087014811A patent/KR100892579B1/ko active IP Right Grant
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2002
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EP2341530B1 (en) | 2017-08-30 |
US7880184B2 (en) | 2011-02-01 |
JP2002261335A (ja) | 2002-09-13 |
EP2339650B1 (en) | 2020-02-05 |
KR20030019580A (ko) | 2003-03-06 |
US7888690B2 (en) | 2011-02-15 |
KR20080070759A (ko) | 2008-07-30 |
CN1229766C (zh) | 2005-11-30 |
EP2341530A1 (en) | 2011-07-06 |
EP2339650A1 (en) | 2011-06-29 |
US20020096994A1 (en) | 2002-07-25 |
EP2343737A1 (en) | 2011-07-13 |
US20040115849A1 (en) | 2004-06-17 |
KR100937840B1 (ko) | 2010-01-21 |
EP2343737B1 (en) | 2020-03-25 |
KR100892578B1 (ko) | 2009-04-08 |
JP3906653B2 (ja) | 2007-04-18 |
KR20080070760A (ko) | 2008-07-30 |
US8409886B2 (en) | 2013-04-02 |
EP1310934A1 (en) | 2003-05-14 |
CN1447958A (zh) | 2003-10-08 |
US6613610B2 (en) | 2003-09-02 |
KR100862545B1 (ko) | 2008-10-16 |
EP1310934A4 (en) | 2009-03-11 |
KR100892579B1 (ko) | 2009-04-08 |
AU2001272740A1 (en) | 2002-01-30 |
TW502463B (en) | 2002-09-11 |
KR20080070758A (ko) | 2008-07-30 |
US20090103292A1 (en) | 2009-04-23 |
US20070087644A1 (en) | 2007-04-19 |
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